KR920003365A - Impregnated Cathode Structure and Manufacturing Method Thereof - Google Patents

Impregnated Cathode Structure and Manufacturing Method Thereof Download PDF

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Publication number
KR920003365A
KR920003365A KR1019900011209A KR900011209A KR920003365A KR 920003365 A KR920003365 A KR 920003365A KR 1019900011209 A KR1019900011209 A KR 1019900011209A KR 900011209 A KR900011209 A KR 900011209A KR 920003365 A KR920003365 A KR 920003365A
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KR
South Korea
Prior art keywords
porous tungsten
electron
emitting material
porous
tungsten
Prior art date
Application number
KR1019900011209A
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Korean (ko)
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KR920009324B1 (en
Inventor
김석기
Original Assignee
김정배
삼성전관 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김정배, 삼성전관 주식회사 filed Critical 김정배
Priority to KR1019900011209A priority Critical patent/KR920009324B1/en
Publication of KR920003365A publication Critical patent/KR920003365A/en
Application granted granted Critical
Publication of KR920009324B1 publication Critical patent/KR920009324B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/04—Manufacture of electrodes or electrode systems of thermionic cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H01J1/20—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
    • H01J1/28—Dispenser-type cathodes, e.g. L-cathode

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid Thermionic Cathode (AREA)

Abstract

내용 없음No content

Description

함침형 음극구조체 및 그 제조방법Impregnated Cathode Structure and Manufacturing Method Thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 따른 함침형 음극구조체의 단면도.3 is a cross-sectional view of an impregnated cathode structure according to the present invention.

제4도는 본 발명에 따른 함침형 음극구조체의 제조방법을 나타낸 것으로 (A)는 함침 준비상태이고, (B)는 함침 완료상태이다.4 shows a method of manufacturing an impregnated cathode structure according to the present invention, where (A) is an impregnation ready state and (B) is an impregnation complete state.

Claims (2)

전자방출물질이 함침된 다공질 텅스텐과, 이를 감싸 지지하는 저장조와, 상기 저장조를 하방에서 지지하는 슬리이브를 구비하여 된 함침형 음극구조체에 있어서, 상기 다공질 텅스텐이 제1, 제2 다공질 텅스텐으로 분리 형성되고 상기 제1다공질 텅스텐 상부의 전자방출물질 함침량이 그 하부나 제2다공질 텅스텐의 전자방출물질 함침량보다 적게 형성된 것을 특징으로 하는 함침형 음극구조체.In an impregnated cathode structure comprising a porous tungsten impregnated with an electron-emitting material, a storage tank surrounding and supporting the same, and a sleeve supporting the storage tank below, the porous tungsten is separated into first and second porous tungsten. And an electron-emitting material impregnation amount formed on the upper portion of the first porous tungsten is less than an electron-emitting material impregnation amount on the lower portion thereof or the second porous tungsten. 전자방출물질이 함침된 다공질 텅스텐과, 이를 감싸 지지하는 저장조와, 상기 저장조를 하방에서 지지하는 슬리이브를 구비하여 된 함침형 음극구조체의 제조방법에 있어서, 상기 다공질 텅스텐을 제1, 제2다공질 텅스텐으로 분리 형성하고 상기 저장조에 상기 제2다공질 텅스텐 전자방출물질, 제1다공질 텅스텐을 순차적으로 적층한 후 이를 상하부 치부로 가압 고정한 상태에서 진공로 또는 수소로에 투입하여 1650℃∼1700℃로 용융함침시키는 공정을 갖는 것을 특징으로 하는 함침형 음극구조체의 제조방법.In the method of manufacturing an impregnated cathode structure comprising a porous tungsten impregnated with an electron-emitting material, a storage tank surrounding the support and a sleeve for supporting the storage tank below, the porous tungsten is first and second porous Separately formed with tungsten, and sequentially depositing the second porous tungsten electron-emitting material and the first porous tungsten in the reservoir, and then injecting the second porous tungsten electron-emitting material and the first porous tungsten into a vacuum furnace or a hydrogen furnace while pressing and fixing them with upper and lower teeth to melt at 1650 ° C to 1700 ° C Method for producing an impregnated cathode structure, characterized in that it has a step of impregnation. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900011209A 1990-07-23 1990-07-23 Impregnated cathode structure and method of the same KR920009324B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900011209A KR920009324B1 (en) 1990-07-23 1990-07-23 Impregnated cathode structure and method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900011209A KR920009324B1 (en) 1990-07-23 1990-07-23 Impregnated cathode structure and method of the same

Publications (2)

Publication Number Publication Date
KR920003365A true KR920003365A (en) 1992-02-29
KR920009324B1 KR920009324B1 (en) 1992-10-15

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ID=19301594

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900011209A KR920009324B1 (en) 1990-07-23 1990-07-23 Impregnated cathode structure and method of the same

Country Status (1)

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KR (1) KR920009324B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100771560B1 (en) * 2007-07-27 2007-10-30 주식회사 두성기술 Semiconductor chip burn-in test device possible approval of high speed frequency

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100771560B1 (en) * 2007-07-27 2007-10-30 주식회사 두성기술 Semiconductor chip burn-in test device possible approval of high speed frequency

Also Published As

Publication number Publication date
KR920009324B1 (en) 1992-10-15

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