KR920001726A - Memory cell manufacturing method - Google Patents

Memory cell manufacturing method

Info

Publication number
KR920001726A
KR920001726A KR1019900008551A KR900008551A KR920001726A KR 920001726 A KR920001726 A KR 920001726A KR 1019900008551 A KR1019900008551 A KR 1019900008551A KR 900008551 A KR900008551 A KR 900008551A KR 920001726 A KR920001726 A KR 920001726A
Authority
KR
South Korea
Prior art keywords
memory cell
cell manufacturing
manufacturing
memory
cell
Prior art date
Application number
KR1019900008551A
Other languages
Korean (ko)
Other versions
KR930006276B1 (en
Inventor
라사균
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR1019900008551A priority Critical patent/KR930006276B1/en
Publication of KR920001726A publication Critical patent/KR920001726A/en
Application granted granted Critical
Publication of KR930006276B1 publication Critical patent/KR930006276B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0387—Making the trench

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
KR1019900008551A 1990-06-11 1990-06-11 Method for fabricating memory cell KR930006276B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900008551A KR930006276B1 (en) 1990-06-11 1990-06-11 Method for fabricating memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900008551A KR930006276B1 (en) 1990-06-11 1990-06-11 Method for fabricating memory cell

Publications (2)

Publication Number Publication Date
KR920001726A true KR920001726A (en) 1992-01-30
KR930006276B1 KR930006276B1 (en) 1993-07-09

Family

ID=19299972

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900008551A KR930006276B1 (en) 1990-06-11 1990-06-11 Method for fabricating memory cell

Country Status (1)

Country Link
KR (1) KR930006276B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5572402A (en) * 1994-02-02 1996-11-05 Samsung Electronics Co., Ltd. Hard disk drive mounting assembly for a computer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5572402A (en) * 1994-02-02 1996-11-05 Samsung Electronics Co., Ltd. Hard disk drive mounting assembly for a computer

Also Published As

Publication number Publication date
KR930006276B1 (en) 1993-07-09

Similar Documents

Publication Publication Date Title
BG97381A (en) ONE-BIT MEMORY CELL
DE69121760D1 (en) Semiconductor memory cell
NO931864L (en) CELL INHIBITION - ADHESION PROTEIN - CARBOHYDRATE - REACTIONS
KR930701838A (en) Solar cell and its manufacturing method
DE69328342D1 (en) Semiconductor memory cell
DE59010020D1 (en) Static memory cell
DE69121483D1 (en) Dynamic semiconductor memory cell
DE69215707D1 (en) Semiconductor memory cell
DE69123567D1 (en) Solar cell
FI924075A (en) ELECTROCHEMICAL PROCESS
DK162790D0 (en) PLANT CELL
KR970004035A (en) Manufacturing Method of Flash Memory Cell
DE4442067B8 (en) Programmable permanent memory cell
DE69119800D1 (en) Semiconductor memory
DE69120301D1 (en) Memory tester
DE69129492D1 (en) SEMICONDUCTOR MEMORY
DE3767729D1 (en) ASSOCIATIVE MEMORY CELL.
DE69124010D1 (en) Semiconductor memory cell
KR890016676A (en) BIC memory cell structure and manufacturing method thereof
DE69121775D1 (en) Erasable programmable memory array
DE69119287D1 (en) Semiconductor memory
EP0457311A3 (en) Semiconductor memory cell
DE69121809D1 (en) Multi-port memory
DE69119920D1 (en) Semiconductor memory
DE69129739D1 (en) Memory circuit

Legal Events

Date Code Title Description
A201 Request for examination
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
J2X1 Appeal (before the patent court)

Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL

G160 Decision to publish patent application
B701 Decision to grant
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20020618

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee