KR910020829A - Vacuum system for rapid heat treatment device - Google Patents

Vacuum system for rapid heat treatment device Download PDF

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Publication number
KR910020829A
KR910020829A KR1019900007233A KR900007233A KR910020829A KR 910020829 A KR910020829 A KR 910020829A KR 1019900007233 A KR1019900007233 A KR 1019900007233A KR 900007233 A KR900007233 A KR 900007233A KR 910020829 A KR910020829 A KR 910020829A
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KR
South Korea
Prior art keywords
vacuum
reactor
valve
heat treatment
rapid heat
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KR1019900007233A
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Korean (ko)
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KR920008039B1 (en
Inventor
이영수
김윤태
전치훈
김보우
장원익
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경상현
재단법인 한국전자통신연구소
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Priority to KR1019900007233A priority Critical patent/KR920008039B1/en
Publication of KR910020829A publication Critical patent/KR910020829A/en
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Publication of KR920008039B1 publication Critical patent/KR920008039B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

내용 없음No content

Description

급속열처리 장치용 진공시스템Vacuum system for rapid heat treatment device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 급속열처리 진공시스템을 나타내는 계통도.1 is a system diagram showing a rapid heat treatment vacuum system of the present invention.

Claims (7)

반도체 제조공정의 급속 열처리 장치 및 급속 열화학 증착 장치에 있어서 공정상 요구되는 반응로(1)의 저압 상태 유지 및 급속한 분위기를 교체할수 있도록 진공펌프(15), 진공밸브(11), 주진공관(13), 부진공관(12), 트로틀밸브(8), 정전시배기관(14)및 주 배기관(30)등으로 구성된 진공 배기계 부분과 진공계 I (6), 압력지시기 A(7)와 진공계Ⅱ(17), 압력지시기 B(18)및 트로틀밸브 제어기(9)등으로 구성된 압력제어계의 두 모듈로 구성된 급속 열처리 장치용 진공시스템.The vacuum pump 15, the vacuum valve 11, the main vacuum tube 13 to maintain the low pressure state and rapidly change the atmosphere of the reactor (1) required in the process in the rapid heat treatment apparatus and rapid thermochemical deposition apparatus of the semiconductor manufacturing process ), A vacuum evacuation system section consisting of a negative vacuum tube (12), a throttle valve (8), an electrostatic discharge pipe (14) and a main exhaust pipe (30), a vacuum gauge I (6), a pressure indicator A (7) and a vacuum gauge II (17). ), A vacuum system for a rapid heat treatment apparatus composed of two modules of a pressure control system consisting of a pressure indicator B (18) and a throttle valve controller (9). 제1항에 있어서, 반응로(1)로 부터의 배기라인은 기계적 진동흡수 및 진공계에의 공정가스가 원활하게 배기되도록 다수의 진동흡수관 A(3)를 병렬로 연결하며 이를 다시 다기관(4)에 의해 모아져 공정상의 생성 입자 여과와 반응로내 급격한 압력 변화 및 오일 역류를 방지 해주는 파티클 트랩(5)에 연결되어 구성됨을 특징으로 하는 급속 열처리 장치용 진공시스템.The exhaust line from the reactor (1) according to claim 1, wherein a plurality of vibration absorbing pipes A (3) are connected in parallel so as to smoothly exhaust the mechanical vibration absorbing and process gas to the vacuum system, and again the manifold (4). And a particle trap (5), which is collected in the process and is connected to a particle trap (5) which prevents rapid pressure change and oil backflow in the reactor. 제1항에 있어서, 압력제어계는 반응로(1)에 부착된 진공계 I (6)의 압력이 압력지시기 A(7)에 의해서 전기적 신호로 변환되어 트로틀 밸브 제어기(9)로 보내지면, 이 트로틀밸브 제어기(9)가 주진공관(13)라인의 트로틀밸브(8)의 개폐면적으로 조절하도록하여 반응로(I)내는 항상 일정한 공정압력이 유지되도록하는 궤환제어(feed back control)가 됨을 특징으로 하는 급속 열처리 장치용 진공 시스템.The throttle according to claim 1, wherein the pressure control system converts the pressure of the vacuum gauge I (6) attached to the reactor 1 into an electrical signal by the pressure indicator A (7) and sends it to the throttle valve controller (9). The valve controller 9 controls the opening / closing area of the throttle valve 8 of the main vacuum pipe line 13 so that it is a feed back control to maintain a constant process pressure in the reactor I. Vacuum system for rapid heat treatment equipment. 제1항에 있어서, 진공밸브(11)는 트로틀밸브(8) 다음에 설치되어 반응로(1)와 진공펌프(15)사이를 차단하며 그 이저너에 공압밸브 B(10b)가 설치된 부진공관(12)이 설치되어 주진공관(13)에 바이패스(bypass)시켜 줌으로서 최초 진공 시스템가동시 진공펌프(15)의 과부하 방지 및 반응로(1)내의 난류에 의한 입자생성이 억제되도록 함을 특징으로 하는 급속 열처리 장치용 진공 시스템.The vacuum chamber (11) according to claim 1, wherein the vacuum valve (11) is installed after the throttle valve (8) to cut off between the reactor (1) and the vacuum pump (15), and a pneumatic valve (10b) having a pneumatic valve (B) installed therein. (12) is provided to bypass the main vacuum tube (13) to prevent overload of the vacuum pump (15) and the generation of particles due to turbulence in the reactor (1) during the initial vacuum system operation. A vacuum system for a rapid heat treatment apparatus, characterized in that. 제1항에 있어서, 공압밸브 C(10c) 및 역지밸브A(16a)가 설치된 정전시 배기관(14)은 공정상 예기치 못한 정전(power failure)발생시 반으로(1)속의 공정가스를 전공펌프(15)를 거치지 않고 주배기관(30)으로 직접 배출되도록 하무로서 반응로(1)내의 웨이퍼손상 방지 및 작업 안전을 꾀하도록 함을 특징으로 하는 급속열처리 장치용 진공 시스템.According to claim 1, wherein the exhaust pipe 14 is provided with a pneumatic valve C (10c) and check valve A (16a) in the event of an unexpected power failure in the process (half) in half the process gas in the electric pump ( 15) vacuum system for a rapid heat treatment apparatus, characterized in that to prevent the wafer damage in the reactor (1) and to ensure the safety of work as it is discharged directly to the main exhaust pipe (30) without passing through. 제1항에 있어서, 진공계Ⅱ(17) 및 압력지시기 B(18)가 진공밸브(11)와 진공펌프(15)사이에 설치되어 공전 전. 후의 반응로(1)및 진공시스템에서의 가스 누출 점검이 가능하도록 함을 특징으로 하는 급속열처리 장치용 진공시스템.The vacuum gauge II (17) and the pressure indicator B (18) are provided between the vacuum valve (11) and the vacuum pump (15) before idle. A vacuum system for a rapid heat treatment apparatus, characterized in that it is possible to check for gas leaks in a subsequent reactor (1) and a vacuum system. 제1항에 있어서, 진공펌프(15)를 구성하는 회전펌프(20)에는 오일여과 필터(23), 모터(22)로 구성된 오일 여과 시스템(21)과, 유량계(26), 역지밸브(16b), 솔레노이드밸브(27)로 구성된 질소 발라스트시스템(25)을 구비하며, 회전펌프(20)의 입. 출구 양단에는 기계적 진동 흡수를 위한 진동흡수관 B (3b)및 진동흡수관 C (3c)를 구비함을 특징으로 하는 급속 열처리 장치용 진공시스템.The rotary pump 20 constituting the vacuum pump 15 includes an oil filtration system 21 composed of an oil filtration filter 23 and a motor 22, a flow meter 26, and a check valve 16b. ), A nitrogen ballast system (25) consisting of a solenoid valve (27), the mouth of the rotary pump (20). A vacuum system for a rapid heat treatment apparatus, characterized in that it comprises a vibration absorption tube B (3b) and the vibration absorption tube C (3c) for absorbing mechanical vibration at both ends of the outlet. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019900007233A 1990-05-21 1990-05-21 Vacuum system for rapid thermal process KR920008039B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900007233A KR920008039B1 (en) 1990-05-21 1990-05-21 Vacuum system for rapid thermal process

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Application Number Priority Date Filing Date Title
KR1019900007233A KR920008039B1 (en) 1990-05-21 1990-05-21 Vacuum system for rapid thermal process

Publications (2)

Publication Number Publication Date
KR910020829A true KR910020829A (en) 1991-12-20
KR920008039B1 KR920008039B1 (en) 1992-09-21

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KR920008039B1 (en) 1992-09-21

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