KR910019077A - Dielectric of Semiconductor Device - Google Patents

Dielectric of Semiconductor Device Download PDF

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Publication number
KR910019077A
KR910019077A KR1019900005356A KR900005356A KR910019077A KR 910019077 A KR910019077 A KR 910019077A KR 1019900005356 A KR1019900005356 A KR 1019900005356A KR 900005356 A KR900005356 A KR 900005356A KR 910019077 A KR910019077 A KR 910019077A
Authority
KR
South Korea
Prior art keywords
dielectric
semiconductor device
baz
tio
note
Prior art date
Application number
KR1019900005356A
Other languages
Korean (ko)
Other versions
KR920006732B1 (en
Inventor
한정인
이상인
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019900005356A priority Critical patent/KR920006732B1/en
Publication of KR910019077A publication Critical patent/KR910019077A/en
Application granted granted Critical
Publication of KR920006732B1 publication Critical patent/KR920006732B1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/08Inorganic dielectrics
    • H01G4/12Ceramic dielectrics

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

내용 없음No content

Description

반도체장치의 유전체Dielectric of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (1)

조성식이 Sr1-xBaz TiO3(0≤X≤0.3)인 것을 특징으로 하는 반도체 장치의 유전체.A dielectric of a semiconductor device, wherein the composition formula is Sr 1-x Baz TiO 3 (0 ≦ X ≦ 0.3). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900005356A 1990-04-17 1990-04-17 Dielectric KR920006732B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900005356A KR920006732B1 (en) 1990-04-17 1990-04-17 Dielectric

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900005356A KR920006732B1 (en) 1990-04-17 1990-04-17 Dielectric

Publications (2)

Publication Number Publication Date
KR910019077A true KR910019077A (en) 1991-11-30
KR920006732B1 KR920006732B1 (en) 1992-08-17

Family

ID=19298101

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900005356A KR920006732B1 (en) 1990-04-17 1990-04-17 Dielectric

Country Status (1)

Country Link
KR (1) KR920006732B1 (en)

Also Published As

Publication number Publication date
KR920006732B1 (en) 1992-08-17

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