KR910018201A - Conductive ink and conductive thick film pattern formation method - Google Patents

Abstract

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Description

Conductive ink and conductive thick film pattern formation method

Since this is an open matter, no full text was included.

1 is a schematic diagram showing a method of filling a recess with ink, and FIG. 2 is a schematic diagram showing a method of pattern writing from a recess to a blanket, and FIG. 3 is a schematic diagram of a method of pressing and transferring a blanket pattern onto a circuit board.

Claims (25)

Conductive metal powder, glass frit, transition metal oxide and dispersant, poly-iso-butyl methacrylate, poly-iso-propyl methacrylate, polymethyl methacrylate, polytetrafluoro ethylene and poly-α-methylstyrene A conductive ink comprising a vehicle containing an organic binder composed of at least one of the foregoing. The conductive ink according to claim 1, wherein the organic binder is composed of a copolymer of poly-α-methylstyrene and poly-iso-butyl methacrylate. The conductive ink according to claim 2, wherein the organic binder is composed of a copolymer composed of 5 to 20 wt% of poly-α-methylstyrene and 80 to 95 wt% of polyiso-butyl methacrylate. The conductive ink according to claim 1, wherein the organic binder is composed of a copolymer of poly-?-Methylstyrene, poly-iso-butyl methacrylate, and polymethyl methacrylate. The method of claim 4, wherein the organic binder is composed of a copolymer consisting of a ratio of 5-20 wt% of poly-α-methylstyrene, 60-90 wt% of poly-iso-butyl methacrylate, and 20-25% of polymethyl methacrylate. Conductive ink, characterized in that. The conductive ink according to claim 1, wherein the organic binder is composed of a copolymer of poly-α-methylstyrene and poly-iso-propyl methacrylate. The conductive ink according to claim 6, wherein the organic binder is composed of a copolymer consisting of 5 to 20 wt% of poly-α-methylstyrene and 80 to 95 wt% of poly-iso-propyl methacrylate. The conductive ink according to claim 1, wherein the organic binder is composed of a copolymer of poly-α-methylstyrene, poly-iso-propylmethacrylate, and polymethylmethacrylate. The method of claim 8, wherein the organic binder is composed of a copolymer consisting of a ratio of 5 to 20 wt% of poly-α-methylstyrene, 60 to 90 wt% of poly-iso-propyl methacrylate and 20 to 25 wt% of polymethyl methacrylate. Conductive ink, characterized in that. The conductive ink according to claim 1, wherein the weight average molecular weight of the organic binder is 100,000 to 1,300. The method according to claim 1, wherein the organic solvent constituting the vehicle is 3 to 13 wt%, the glass frit amount is 3 to 4 wt%, the transition metal oxide is 0.5 to 2.0 wt%, the dispersant is 0.05 to 5.0 wt%, the doped metal powder is 78 Conductive ink, characterized in that consisting of ~ 86wt%. The conductive ink according to claim 1, wherein the content of the organic binder is 2 to 15 wt% based on the total amount of the ink. The conductive ink according to claim 1, wherein the organic solvent for preparing the vehicle is 0.04 to 0.18 in weight ratio with respect to the total powder amount. The conductive ink according to claim 1, wherein the conductive metal powder is composed of at least one of copper, gold and silver. The conductive ink according to claim 1, wherein the average particle diameter of the conductive metal powder is 0.05 to 3.0 mu m. The organic solvent constituting the vehicle according to claim 1, wherein the organic solvent constituting the vehicle is α-tetpinol, butyl carbitol, butylgarbitol acetate, 2,2,4-trimethyl 1-3-hydroxypentylisobutylate, 2-butoxy A conductive ink comprising at least one of ethanol and 2-ethoxyethanol. The conductive ink according to claim 1, wherein the transition metal oxide is composed of at least one of zinc oxide, titanium oxide, dichromium oxide, and nickel cadmium monoxide oxide. A process of filling a concave portion of the conductive ink concave plate, a process of transferring the conductive ink in the concave portion of the concave plate onto a blanket coated with an elastic body containing silicone resin as a main component, and a conductive thick film pattern transferred onto the blanket A method for forming a conductive thick film pattern comprising a process of transferring and printing a substrate onto a substrate, baking a conductive pattern to scatter organic matter, and sintering the conductive pattern. The method of claim 18, wherein the conductive ink is a conductive metal powder, glass frit, transition metal oxide and dispersant, poly-iso-butyl methacrylate, poly-iso-propyl methacrylate, polymethyl methacrylate, polytetra A conductive thick film pattern forming method comprising a vehicle containing an organic binder made of at least one of fluoroethylene and poly-α-methylstyrene. The conductive thick film pattern forming method according to claim 18, wherein the hardness of the elastic body containing silicone resin as a main component is 30 to 60 degrees. 19. The substrate according to claim 18, wherein the transfer pressure in the step of transferring the ink in the concave portion of the concave plate to a blanket coated with an elastic body containing silicone resin as a main component, and the conductive thick film pattern transferred onto the blanket on the substrate. The printing pressure in the process of transferring and printing is 2-6 kg / cm <2>, The conductive thick film pattern formation method characterized by the above-mentioned. The method for forming a conductive thick film pattern according to claim 18, wherein the oxygen concentration in the step of firing in a non-oxidizing atmosphere is 10 ppm or less. The method for forming a conductive thick film pattern according to claim 18, wherein the temperature of the high temperature holding part in the step of firing in a non-oxidizing component atmosphere is 850 to 975 ° C. The method for forming a conductive thick film pattern according to claim 18, wherein the temperature of the high temperature holding part in the step of firing in an oxidizing component crisis is 800 to 925 ° C. ※ Note: The disclosure is based on the initial application.