KR910017542A - LDD manufacturing method - Google Patents

LDD manufacturing method

Info

Publication number
KR910017542A
KR910017542A KR1019900004060A KR900004060A KR910017542A KR 910017542 A KR910017542 A KR 910017542A KR 1019900004060 A KR1019900004060 A KR 1019900004060A KR 900004060 A KR900004060 A KR 900004060A KR 910017542 A KR910017542 A KR 910017542A
Authority
KR
South Korea
Prior art keywords
ldd manufacturing
ldd
manufacturing
Prior art date
Application number
KR1019900004060A
Other languages
Korean (ko)
Other versions
KR930000909B1 (en
Inventor
정원영
신동진
한영규
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR1019900004060A priority Critical patent/KR930000909B1/en
Publication of KR910017542A publication Critical patent/KR910017542A/en
Application granted granted Critical
Publication of KR930000909B1 publication Critical patent/KR930000909B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
KR1019900004060A 1990-03-26 1990-03-26 Manufacturing method of lightly doped drain KR930000909B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900004060A KR930000909B1 (en) 1990-03-26 1990-03-26 Manufacturing method of lightly doped drain

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900004060A KR930000909B1 (en) 1990-03-26 1990-03-26 Manufacturing method of lightly doped drain

Publications (2)

Publication Number Publication Date
KR910017542A true KR910017542A (en) 1991-11-05
KR930000909B1 KR930000909B1 (en) 1993-02-11

Family

ID=19297373

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900004060A KR930000909B1 (en) 1990-03-26 1990-03-26 Manufacturing method of lightly doped drain

Country Status (1)

Country Link
KR (1) KR930000909B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100311494B1 (en) * 1999-04-15 2001-11-02 김영환 Method for patterning photoresist

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100311494B1 (en) * 1999-04-15 2001-11-02 김영환 Method for patterning photoresist

Also Published As

Publication number Publication date
KR930000909B1 (en) 1993-02-11

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