KR910013552A - How to improve driving characteristics of input and output - Google Patents

How to improve driving characteristics of input and output Download PDF

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Publication number
KR910013552A
KR910013552A KR1019890020603A KR890020603A KR910013552A KR 910013552 A KR910013552 A KR 910013552A KR 1019890020603 A KR1019890020603 A KR 1019890020603A KR 890020603 A KR890020603 A KR 890020603A KR 910013552 A KR910013552 A KR 910013552A
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KR
South Korea
Prior art keywords
output
input
driving characteristics
improve driving
note
Prior art date
Application number
KR1019890020603A
Other languages
Korean (ko)
Other versions
KR920010200B1 (en
Inventor
전태수
Original Assignee
김광호
삼상전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼상전자 주식회사 filed Critical 김광호
Priority to KR1019890020603A priority Critical patent/KR920010200B1/en
Publication of KR910013552A publication Critical patent/KR910013552A/en
Application granted granted Critical
Publication of KR920010200B1 publication Critical patent/KR920010200B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음.No content.

Description

입출력단의 구동특성 개선방법How to improve driving characteristics of input and output

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 따른 출력단의 설계평면도.2 is a plan view of the output stage according to the present invention.

Claims (1)

반도체 메모리 장치에 있어서, 출력구동부의 구동트랜지스터의 게이트 전극과 출력점점간의 간격을 크게 함을 특징으로 하는 입출력단의 정전특성 개선방법.A semiconductor memory device, comprising: increasing an interval between a gate electrode and an output point of a driving transistor of an output driver, wherein the electrostatic characteristic of the input / output stage is improved. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890020603A 1989-12-30 1989-12-30 Method for manufacturing of the semiconductor chip KR920010200B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890020603A KR920010200B1 (en) 1989-12-30 1989-12-30 Method for manufacturing of the semiconductor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890020603A KR920010200B1 (en) 1989-12-30 1989-12-30 Method for manufacturing of the semiconductor chip

Publications (2)

Publication Number Publication Date
KR910013552A true KR910013552A (en) 1991-08-08
KR920010200B1 KR920010200B1 (en) 1992-11-21

Family

ID=19294650

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890020603A KR920010200B1 (en) 1989-12-30 1989-12-30 Method for manufacturing of the semiconductor chip

Country Status (1)

Country Link
KR (1) KR920010200B1 (en)

Also Published As

Publication number Publication date
KR920010200B1 (en) 1992-11-21

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