KR910008708B1 - Positive photoresist composition - Google Patents
Positive photoresist composition Download PDFInfo
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- KR910008708B1 KR910008708B1 KR1019880015498A KR880015498A KR910008708B1 KR 910008708 B1 KR910008708 B1 KR 910008708B1 KR 1019880015498 A KR1019880015498 A KR 1019880015498A KR 880015498 A KR880015498 A KR 880015498A KR 910008708 B1 KR910008708 B1 KR 910008708B1
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- composition
- photoresist
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- resin
- novolak resin
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 23
- 239000000203 mixture Substances 0.000 title claims description 25
- 229920005989 resin Polymers 0.000 claims abstract description 22
- 239000011347 resin Substances 0.000 claims abstract description 22
- 229920003986 novolac Polymers 0.000 claims abstract description 14
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000011230 binding agent Substances 0.000 claims abstract description 4
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 claims abstract description 4
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 claims abstract 3
- 238000000034 method Methods 0.000 claims description 11
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 claims description 6
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 4
- 238000005227 gel permeation chromatography Methods 0.000 claims description 4
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 claims description 4
- 150000005691 triesters Chemical class 0.000 claims description 4
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- SLGBZMMZGDRARJ-UHFFFAOYSA-N Triphenylene Natural products C1=CC=C2C3=CC=CC=C3C3=CC=CC=C3C2=C1 SLGBZMMZGDRARJ-UHFFFAOYSA-N 0.000 claims description 2
- 229940100630 metacresol Drugs 0.000 claims description 2
- 125000005580 triphenylene group Chemical group 0.000 claims description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 claims 1
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000002904 solvent Substances 0.000 abstract description 6
- 239000000654 additive Substances 0.000 abstract description 5
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 abstract description 4
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 abstract description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 abstract description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 abstract description 3
- 239000008096 xylene Substances 0.000 abstract description 3
- 239000000975 dye Substances 0.000 abstract description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract description 2
- 239000004014 plasticizer Substances 0.000 abstract description 2
- 239000004094 surface-active agent Substances 0.000 abstract description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 abstract 2
- 230000000996 additive effect Effects 0.000 abstract 1
- 230000002186 photoactivation Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 8
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 150000005690 diesters Chemical class 0.000 description 2
- -1 organic acid cyclic anhydride Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- HJIAMFHSAAEUKR-UHFFFAOYSA-N (2-hydroxyphenyl)-phenylmethanone Chemical compound OC1=CC=CC=C1C(=O)C1=CC=CC=C1 HJIAMFHSAAEUKR-UHFFFAOYSA-N 0.000 description 1
- ZRDYULMDEGRWRC-UHFFFAOYSA-N (4-hydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C(O)=C1O ZRDYULMDEGRWRC-UHFFFAOYSA-N 0.000 description 1
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-naphthoquinone Chemical compound C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- QBANGCKLDIJTOO-UHFFFAOYSA-N OC1=C(C(=O)C2=CC=C(C=C2)O)C=CC(=C1O)O.OC1=C(C(=O)C2=CC=C(C=C2)O)C=CC(=C1O)O Chemical compound OC1=C(C(=O)C2=CC=C(C=C2)O)C=CC(=C1O)O.OC1=C(C(=O)C2=CC=C(C=C2)O)C=CC(=C1O)O QBANGCKLDIJTOO-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 102000005583 Pyrin Human genes 0.000 description 1
- 108010059278 Pyrin Proteins 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004128 high performance liquid chromatography Methods 0.000 description 1
- 238000004811 liquid chromatography Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- XDJOIMJURHQYDW-UHFFFAOYSA-N phenalene Chemical compound C1=CC(CC=C2)=C3C2=CC=CC3=C1 XDJOIMJURHQYDW-UHFFFAOYSA-N 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
Abstract
Description
본 발명은 집적회로, 특히 L.S.I(Large Scale Integrated Circuit) 및 V.L.S.I(Very Large Scale Integrated Circuit)반도체 디바이스 제조에 사용되는 포지티브 포토레지스트의 조성물에 관한 것으로 기존의 것보다 감도를 높이면서 패턴 프로파일 (Pattern Profile)의 경사도를 유지시키는 노보락 수지(Novolak Resin)와 나프토퀴논 디아지드(Naphtoquinone diazide)계의 광활성분 및 이와 상용성이 좋은 용매와 첨가제들로 이루어진 포지티브 포토레지스트 조성물에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to compositions of positive photoresists used in the manufacture of integrated circuits, in particular, large scale integrated circuits (LSIs) and very large scale integrated circuits (VLSIs) semiconductor devices. The present invention relates to a positive photoresist composition comprising a photoactive component of Novolak Resin and a Naphtoquinone diazide-based solvent and additives having good compatibility with Novolak Resin and Naphtoquinone diazide.
L.S.I 혹은 V.L.S.I 반도체 디바이스는 실리콘 웨이퍼상에 미프론(micron : ㎛) 혹은 서브미크론(submicron)단위의 미세한 회로를 형성시켜 원하는 전기적 기능을 갖도록 한 초정밀의 전기 부품이라고 할 수 있다.L.S.I or V.L.S.I semiconductor devices are ultra-precision electrical components that have micron (micron) or submicron unit circuits formed on silicon wafers to have desired electrical functions.
이러한 미세회로 가공에 필수적으로 쓰이는 것이 포코레지스트이며 특히 포지티브 포토레지스트는 해상력이 우수해 서브미크론의 회로 형성이 가능하며 V.L.S.I.반도체 디바이스 생산에는 주로 포지티브 포토레지스트를 쓰고 있다.Poco-resist is essential for processing such microcircuits. In particular, positive photoresist has excellent resolving power to form submicron circuits, and positive photoresist is mainly used for V.L.S.I.semiconductor device production.
포지티브 포토레지스트는 알카리 수용액에 잘녹는 노보락 수지와 알카리 불용성의 나프토귀논 디아지드계의 광할성 물질, 용매 그리고 기타 첨가제들로 이루어진다.The positive photoresist is composed of a novolak resin that is soluble in an aqueous alkali solution, an alkali insoluble naphthognon diazide-based photoreactive substance, a solvent, and other additives.
광활성 물질은 빛을 받게되면 물리, 화학적 성질이 변하는 것으로 디아지드계의 광활성 물질은 카르복실산(Carboxylic Acid)형태로 변하여 알카리 가용성이 되어 알카리 현상액에 의해 노보락수지와 함께 현상시 씻겨 나가게 된다.The photoactive material changes its physical and chemical properties when it receives light, and the diazide-based photoactive material turns into a carboxylic acid (Carboxylic Acid) form and becomes alkaline soluble, and is washed with the novolak resin when developed with an alkali developer.
반면에 빛을 받지 않은 부분은 광활성 물질이 노보락 수지의 용해를 방해하여 기판 위에 패턴을 남기게 된다.On the other hand, in the unlighted portion, the photoactive material prevents the dissolution of the novolak resin, leaving a pattern on the substrate.
포토레지스트의 패턴이 미세할수록 보다 정밀한 디바이스를 제조할 수 있지만 패턴 프로파일의 경사도가 너무 완만하면 에칭특성이 나빠져서 원하는 회로를 얻을 수가 없다.The finer the pattern of the photoresist, the more accurate a device can be manufactured. However, if the inclination of the pattern profile is too gentle, the etching characteristics deteriorate and a desired circuit cannot be obtained.
포토레지스트에 있어서 또 다른 중요한 특징은 감도(Photo Sensitivity)로서 반도체 디바이스 양산공정에서 여러개의 렌즈와 필터를 통해 나온 빛이 패턴을 형성하기 위한 광원으로 작용할 때 노광시간은 작업성을 좌우하는 요인이 된다.Another important feature of photoresist is photo sensitivity, where exposure time is a factor that affects workability when light from multiple lenses and filters acts as a light source to form patterns in semiconductor device mass production. .
일반적으로 포지티브 포토레지스트는 네가티브 포토레지스트(Nagative Photoresist)베 비해 3-5배 정도, 감도가 느리다.In general, positive photoresist is 3-5 times slower than negative photoresist.
포지티브 포토레지스트의 감도를 높이기 위한 방법으로 노보락 수지의 조성조절방법(U.S.P. 제3,666,473호), 유기산의 탈수물(Organic acid cyclic anhydride)을 첨가하는 방법(,U.S.P. 제4,115,128호), 포토레지스트의 용제를 변경하는 방법 (U.S.P. 제4,550,069호)들이 제시되고 있다.As a method for increasing the sensitivity of positive photoresist, a method of adjusting the composition of a novolak resin (USP No. 3,666,473), a method of adding an organic acid cyclic anhydride (USP No. 4,115,128), a solvent of a photoresist (USP 4,550,069) have been proposed.
또한 일본국 특공소 62-28457호 및 특공소 61-185741호에서도 광활성분의 합성시 2, 3, 4, 4'-테트라히드록시 벤조페논(2,3,4,4'-tetrahydroxy benzophenone)을 이용함으로서 포토레지스트의 감도와 내열성 등 포토레지스트의 물성을 높이는 방법을 제시하고 있다.In addition, Japanese Patent Application No. 62-28457 and Japanese Patent Application No. 61-185741 also use 2,3,4,4'-tetrahydroxy benzophenone (2,3,4,4'-tetrahydroxy benzophenone) when synthesizing photoactive components. By using this method, a method of enhancing physical properties of the photoresist, such as sensitivity and heat resistance of the photoresist, has been proposed.
본 발명은 하기 구조식(Ⅰ)로 표시되는 2, 3, 4-트리히독시 벤조페논(2, 3, 4-trihydroxy benzophenone)과 구조식(Ⅱ)로 표시되는 2, 3, 4, 4'-테트라히드록시 벤조페논을 구조식(Ⅲ)의 나프토퀴논-1, 2-디아지드-5-술포닐 클로라이드 (Naphtoquinone-1,2-diazid-5-Sulfonyl Chloride)화의 에스테르화물(구조식 Ⅳ, Ⅴ)을 광활성분으로 하고 메타크레졸(m-Crasol)과 파라크레졸(P-Craslo)을 포함하는 노보락 수지(구조식 Ⅵ)즉 나프타린, 페나린(phenalene) 페난스렌 (phenanthrene), 안트라센(Anthracene), 피렌(pyrene), 트리페니린(Tri-phenylene), 나프타신(Na-phthacene)중에서 선택된 수지를 바인더 레진으로하고, 용매로는 에틸 셀로솔브 아세테이트(Ethyl Cellosolve Acetate), 부틸 아세테이트, 자이렌(Xylene), 시킬로헥사논, 메틸에틸케톤 중에서 2종 이상 배합 사용하고, 첨가제로는 염료, 계면활성성제, 가소제들을 선택하여 사용하며, 특히 이상의 첨가제 외에 2개 이상의 벤젠고리를 갖는 유기화합물을 포토레지스트 고형분에 대해 0.5-5중량% 첨가하므로써 패턴 프로파일의 경사도를 반도체 디바이스 제조공정에서 요구하는 수준으로 제공할 수 있도록 된 포지티브 포토레지스트의 조성물에 관한 것이다.The present invention provides 2, 3, 4-trihydroxydobenzophenone (2, 3, 4-trihydroxy benzophenone) represented by the following structural formula (I) and 2, 3, 4, 4'-tetra represented by the structural formula (II). Hydroxybenzophenone was esterified with Naphtoquinone-1,2-diazid-5-sulfonyl chloride of formula (III) (Structures IV, V) Is a photoactive component and contains a novolak resin (method VI) containing methacresol (m-Crasol) and paracresol (P-Craslo), i.e., naphtharin, phenalene, phenanthrene, anthracene, Resin selected from pyrene, Tri-phenylene and Na-phthacene is used as the binder resin, and the solvent is ethyl cellosolve acetate, butyl acetate, and xylene ), Halohexanone, methyl ethyl ketone, and two or more of them are used.Additives include dyes, surfactants and plasticizers. In particular, by adding 0.5-5% by weight of organic compounds having two or more benzene rings in addition to the above additives to the photoresist solids, the gradient of the pattern profile can be provided to the level required in the semiconductor device manufacturing process. It relates to a composition of positive photoresist.
상기 구조식(Ⅳ) 및 구조식(Ⅴ)에서,In the above formula (IV) and (V),
D는 H또는
구조식(Ⅳ)에서 트리에스터의 비율은 70%이상임The ratio of triester in Structural Formula (IV) is over 70%
구조식(Ⅴ)에서 트리에스터의 비율은 50%이상임The ratio of triester in Structural Formula (Ⅴ) is over 50%
본 발명의 조성물 중에서 구조식(Ⅳ), (Ⅴ)의 물질은 미국 특허 제3,106,465호 및 제3,106,465호의 방법에 따라 상온에서 구조식(Ⅰ)과 (Ⅲ) 혹은(Ⅱ)와(Ⅲ)을 디옥산(Dioxane)에 용해시켜 교반한 후, 트리에틸아민(Triethylamine)을 적가하여 에스테트화 반응을 유도한 뒤 정제하여 얻었다.In the compositions of the present invention, the materials of the structural formulas (IV) and (V) are dioxane (I), (III) or (II) and (III) at room temperature according to the methods of US Patent Nos. 3,106,465 and 3,106,465. Dioxane) was dissolved in the mixture, and triethylamine was added dropwise to induce an esterification reaction, followed by purification.
본 발명의 조성에서 광활성분(Ⅳ)와 (Ⅴ)간의 중량비율으그런데 20 : 80-90 : 10이며 바람직스럽기는 35 : 65-75 : 25의 비율이 이상적이다. 바인더레진인 노보락 수지(구조식(Ⅳ))는 겔 퍼미에이션 크로마토그라프(GPC)에 의한 평균 분자량 25,000-35,000의 범위의 것이고, 수지내의 메타크레졸과 파라크레졸을 60 : 40-95 : 5의 비율을 가진다. 또한 광활성분과 노보락 수지와의 비율은 10 : 90-30 : 70의 범위내에 있다.In the composition of the present invention, the weight ratio between the photoactive component (IV) and (V) is 20: 80-90: 10 and preferably 35: 65-75: 25. Novolak resin (structure (IV)), a binder resin, has a molecular weight of 25,000-35,000 by gel permeation chromatography (GPC) and a ratio of 60: 40-95: 5 of metacresol and paracresol in the resin. Has The ratio of the photoactive component and the novolak resin is in the range of 10: 90-30: 70.
이하 실시예를 들어 본 발명을 구체적으로 설명한다.The present invention will be described in detail with reference to the following Examples.
[조성 A][Composition A]
2, 3, 4-트리히드록시 벤조페논 6.91g(0.03㏖)과 나프토퀴는 -1, 2-디아지드-5-슬포닐클로라이드 18.54g(0.069㏖)을 디옥산 250ml에 넣고 30분간 용해시킨 후 트리에틸아민, 7.0g을 30분-1시간 적가한후 증류수에 침전시켰다. 침전물은 물과 1가 알콜을 사용하여 정제한 후 진공건조하엿다.6.91 g (0.03 mol) of 2,3,4-trihydroxy benzophenone and naphthoquite were dissolved in 30 ml of dioxane in 18.54 g (0.069 mol) of -1,2-diazide-5-sulfonyl chloride for 30 minutes. Thereafter, 7.0 g of triethylamine was added dropwise to 30 minutes-1 hour, and then precipitated in distilled water. The precipitate was purified using water and monohydric alcohol and dried in vacuo.
이렇게 하여 얻은 분말을 에틸셀로솔브 아세테이트에 용해시켜 액체크로마토그라프(HPLC : WATERS 440, COLUMN : μ-PORASIL)을 사용하여 분석한 결과 트리에스터(Trister)75.2%, 디에스터(Diester)15.5%, 모노에스터(Monoester)8.9%였다.The powder thus obtained was dissolved in ethyl cellosolve acetate and analyzed using liquid chromatography (HPLC: WATERS 440, COLUMN: μ-PORASIL). As a result, Trister 75.2%, Diester 15.5%, Monoester (8.9%).
[조성 B][Composition B]
2, 3, 4, 4'-테트라히드록시 벤조페논 7.39g(0.03㏖)과 나프토퀴논-1, 2-디아지드-5-슬포닐 클로라이드 20.15g(0.075㏖)을 사용한 외에는 조성 A와 같다. 분석결과 테트라에스터(Tetraester)53.2%, 트리에스터(Triester)18.2%, 디에스터 (Diester)19.6%, 모노에스터(Monoester)7.8%였다.Same as Composition A except that 7.39 g (0.03 mol) of 2, 3, 4, 4'-tetrahydroxy benzophenone and 20.15 g (0.075 mol) of naphthoquinone-1, 2-diazide-5-sulfonyl chloride were used. . As a result, tetraester 53.2%, Trister 18.2%, Diester 19.6% and Monoester 7.8%.
[실시예 1]Example 1
다음과 같은 조성의 포토레지스트를 준비한다.A photoresist having the following composition is prepared.
°조성 A의 건조된 분말 1.5g° C dried composition 1.5g
°조성 B의 건조된 분말 1.5g° 1.5 g of dried powder of composition B
°노보락 수지(평균분자량 30,000) 12g° Novolak Resin (Average Molecular Weight 30,000) 12g
°에틸셀로솔브 아세테이트(80%)° Ethyl cellosolve acetate (80%)
부틸 아세테이트(10%)Butyl Acetate (10%)
자이렌(10%)인 용매 38g38 g of xylene (10%) solvent
°피린(PYRENE) 0.15g° Pyrene 0.15 g
이상의 조성물을 0.2㎛으로 여과하여 4인치 실리콘 웨이퍼에 5,000rpm으로 스핀코팅하고 95℃로 20분간 프리베이크(PREBAKE)한 후 막의 두께를 측정한 결과 1.5㎛였다.The above composition was filtered to 0.2 µm, spin-coated at 5,000 rpm on a 4 inch silicon wafer, and prebaked at 95 ° C. for 20 minutes, and the thickness of the film was 1.5 µm.
이것을 라인과 스페이스가 있는 마스크를 사용하여 자외선 어라이너(UV-Aligner)로 노광하였다.This was exposed with a UV-Aligner using a mask with lines and spaces.
노광량은 40mj/㎠의 광량부터 150mj/㎠의 광량까지 10mj/㎠간격으로 하였다.The exposure amount was 10mj / cm <2> interval from the light quantity of 40mj / cm <2> to the light quantity of 150mj / cm <2>.
노광이 끝난 후 0.27규정농도의 알카리 현상액에 30초간 현상하였다.After the exposure was completed, the solution was developed for 30 seconds in an alkaline developer having a concentration of 0.27.
현상액의 온도는 23±1℃로 유지한다.The temperature of the developer is maintained at 23 ± 1 ° C.
현상 후의 하드베이크(HARDBAKE)는 120℃에서 1시간동안 실시하였고 광학현미경과 전자현미경을 이용하여 패턴을 관찰하였다.After development, the hard bake was performed at 120 ° C. for 1 hour, and patterns were observed using an optical microscope and an electron microscope.
스페이스 패턴의 레지스트가 웨이퍼의 표면까지 완전히 현상되어 나가는 광량을 레지스트의 감도로 하였으며, 패턴 프로파일의 각도는 전자현미경의 패턴 단면사진으로 측정하였는바 그 결과는 표 1과 같다.The amount of light that the resist of the space pattern is completely developed to the surface of the wafer was used as the sensitivity of the resist, and the angle of the pattern profile was measured by the pattern cross-sectional photograph of the electron microscope. The results are shown in Table 1 below.
[비교 실시예 1]Comparative Example 1
실시예 1과 비교하여 피린을 첨가하지 않은 것 외에는 실시예 1과 동일하게 실시하였으며 이로 인한 결과는 표 1과 같다.Compared to Example 1, except that no pyrine was added, was carried out in the same manner as in Example 1 and the results are shown in Table 1.
[비교 실시예 2]Comparative Example 2
실시예 1과 비교하여 조성 A의 건조된 분말을 첨가하지 않고 조성 B의 건조된 분말만을 3.0g첨가한 것외에는 실시예 1과 동일하게 실시하였으며 이로 인한 결과는 표 1과 같다.Compared to Example 1, except that only 3.0g of the dried powder of the composition B was added without adding the dried powder of the composition A was carried out in the same manner as in Example 1 and the results are shown in Table 1.
[비교 실시예 3]Comparative Example 3
실시예 1과 비교하여 조성 B의 건조된 분말을 첨가하지 않고 조성 A의 건조된 분말만을 3.0g첨가한 것 외에는 실시예 1과 동일하게 실시하였으며 이로 인한 결과는 표 1과 같다.Compared to Example 1, except that only the dried powder of the composition A 3.0g without adding the dried powder of the composition B was added in the same manner as in Example 1 and the results are shown in Table 1.
[실시예 2]Example 2
실시예 1과 비교하여 조성 A의 건조된 분말을 1.2g, 조성B의 건조된 분말을 1.8g으로 바꾼 것 외에는 실시예 1과 동일하게 실시하였으며 이로 인한 결과는 표 1과 같다.Compared to Example 1, except that the dried powder of Composition A was changed to 1.2g, and the dried powder of Composition B was changed to 1.8g, the same procedure as in Example 1 was carried out.
[비교 실시예 4]Comparative Example 4
실시예 2와 비교하여 피린을 첨가하지 않은 것 외에는 실시예 2와 동일하게 실시하였으며 이로 인한 결과는 표 1과 같다.Compared to Example 2, except that pyrin was not added, the same procedure as in Example 2 was carried out, and the results are shown in Table 1 below.
포토레지스트 패턴 프로와일Photoresist Pattern Pro-Wil
[표 1]TABLE 1
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880015498A KR910008708B1 (en) | 1988-11-24 | 1988-11-24 | Positive photoresist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880015498A KR910008708B1 (en) | 1988-11-24 | 1988-11-24 | Positive photoresist composition |
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| Publication Number | Publication Date |
|---|---|
| KR900008700A KR900008700A (en) | 1990-06-03 |
| KR910008708B1 true KR910008708B1 (en) | 1991-10-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019880015498A KR910008708B1 (en) | 1988-11-24 | 1988-11-24 | Positive photoresist composition |
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| Country | Link |
|---|---|
| KR (1) | KR910008708B1 (en) |
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1988
- 1988-11-24 KR KR1019880015498A patent/KR910008708B1/en not_active IP Right Cessation
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| KR900008700A (en) | 1990-06-03 |
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