KR910003145B1 - Method of coating resin hardening for-transistor - Google Patents

Method of coating resin hardening for-transistor Download PDF

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Publication number
KR910003145B1
KR910003145B1 KR1019880002802A KR880002802A KR910003145B1 KR 910003145 B1 KR910003145 B1 KR 910003145B1 KR 1019880002802 A KR1019880002802 A KR 1019880002802A KR 880002802 A KR880002802 A KR 880002802A KR 910003145 B1 KR910003145 B1 KR 910003145B1
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South Korea
Prior art keywords
curing
coating resin
transistor
resin
vulcanization
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KR1019880002802A
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Korean (ko)
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KR890015386A (en
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전오섭
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삼성전자 주식회사
김광호
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

The curing method of coating resin for transistor contains the pre-curing process of the coating resin by flowing and humidifying with pure H2O andnitrogen gas (N2) before curing on the high temp. oven. The said curing method is useful in the preparation of transistor for high voltage. In the fig., 1= trasistor, 4= resin, 5= placing part, 6= water tank, 9= nitrogen gas feeding pipe, 10= flowing and humidifying pipe.

Description

트랜지스터용 도포수지(Coating Resin)의 경화방법Hardening Method of Coating Resin for Transistor

첨부도면은 본 발명의 경화방법에 사용되는 가류가습을 이용한 경화장치의 개요도.The accompanying drawings are schematic views of a curing apparatus using vulcanization humidification used in the curing method of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 :트랜지스터 4 : 수지1: Transistor 4: Resin

5 : 적재부 6 : 물탱크5: loading part 6: water tank

9 : 질소공급관 10 : 가류가습공급관9: nitrogen supply pipe 10: vulcanization humidification supply pipe

본 발명은 고압 트랜지스터를 제조할때 사용하는 도포수지(TST-3100등)의 완전한 경화를 꾀하여 제품의 신뢰성 및 특성의 향상을 얻을수 있도록 고온의 오븐(oven)에서 경화시키기 전에 순수(H2O)와 질소(N2)의 가류가습을 이용하여 예비경화하는 트랜지스터용 도포수지의 경화 방법에 관한 것이다.The present invention is intended to completely cure the coating resin (TST-3100, etc.) used in the manufacture of the high-voltage transistor to achieve the improvement of the reliability and properties of the product to obtain a pure (H 2 O) before curing in a hot oven (oven) And a curing method of a coating resin for transistors which is preliminarily cured by using vulcanization humidification of nitrogen and N 2 .

종래의 도포수지 경화방법은 일반적으로 일정한 조성비로 혼합된 공지의 고압트린지스터용 도포수지를 경화할때 200℃의 오븐에 넣은후 24시간동안 방치하여 경화시켰던 것이나, 도포수지의 적절한 경화조건을 결정하기 어려워서 도포수지내의 필러 (Filler)의 완전한 결합에 의한 경화가 이루어지지않고, 수지와 칩표면과의 불완전한 접착등으로 인하여 제품의 신뢰성이 떨어졌을 뿐만 아니라, 불완전 경화상태에서 다음 공정이 진행되므로서 제반 특성의 불량요인이 되는 문제점이 있었던 것이다.Conventional coating resin curing method is a known high-pressure transistor coating resin, which is usually mixed at a constant composition ratio, was put in an oven at 200 ℃ for 24 hours to cure, but determines the appropriate curing conditions of the coating resin It is difficult to be hardened by the perfect bonding of the filler in the coating resin, and the reliability of the product is lowered due to incomplete adhesion between the resin and the chip surface, and the next process is carried out in the incomplete curing state. There was a problem of being a bad factor of the characteristics.

또한, 상기와 같이 경화상태가 불완전하게 완성된 완제품을 고역바이어스(HTRB)시험하였을때 대략 168시간정도 밖에는 견디지 못하는 단점이 있었다.In addition, there was a disadvantage that can only endure approximately 168 hours when the high-pass bias (HTRB) test of the finished product incompletely cured state as described above.

본 발명은 상기와 같은 종래의 경화방법에서 발생하는 도포수지의 불완전 경화를 방지하여 완벽한 경화를 꾀하고, 제품의 신뢰성을 향상시켜서 1,000시간 정도의 고온 역바이어스 시험이 가능하도록 가류가습을 이용한 도포수지의 경화방법을 제공하고져 함에 발명의 목적이 있는 것으로, 이를 첨부도면에 의하여 설명하면 다음과 같다. 리이드 프레임(2)상의 칩(3)에 수지(4)를 도포시킨 트랜지스터(1)를 경화시키는 경화장치 를 구성함에 있어서, 상부에 트랜지스터(1)를 적재할수 있도록 적재부(5)를 형성하고, 하부에는 적당량의 순수(7)를 담은 물탱크(6)를 착설하여 그 일측에서 질소(8)를 14PSI의 압력으로 공급할수 있도록 질소공급관(9)을 착설하므로서 물탱크(6)에서 증발하는 가류가습이 적재부(5)와 관통연결된 가류가습긍급관(10)에 의하여 공급되어 적재부(5)내의 제품을 경화시키도록 구성된 것이다.The present invention prevents incomplete curing of the coating resin generated in the conventional curing method as described above to achieve perfect curing, and improve the reliability of the product by applying a curing resin using vulcanization humidification to enable a high temperature reverse bias test of about 1,000 hours. The purpose of the present invention is to provide a curing method of the present invention, which will be described below with reference to the accompanying drawings. In constructing a curing apparatus for curing the transistor 1 having the resin 4 coated on the chip 3 on the lead frame 2, the stacking portion 5 is formed so that the transistor 1 can be loaded thereon. In the lower part, a water tank 6 containing an appropriate amount of pure water 7 is installed, and a nitrogen supply pipe 9 is installed to supply nitrogen 8 at a pressure of 14 PSI at one side thereof, thereby evaporating from the water tank 6. The vulcanization humidification is supplied by the vulcanization humidifying air supply pipe 10 connected to the loading part 5 so as to cure the product in the loading part 5.

상기와 같은 경화장치를 이용하여서 적당량의 순수(7)과 담긴 물탱크(6)에 대략 14PSI의 질소(8)를 주입하면 순수가 가류가습되면서 증발하여 가류가습공급관(10)을 통하여 적재부(5)로 공급되어서 트랜지스터(1)의 칩(3)상에 도포된 수지(4)를 경화시켜주게 되는 것으로 이러한 가류가습분위기 속에 10시간 정도 방치하면 예비결화작업이 끝나게 되는 것이다.When the nitrogen (8) of approximately 14 PSI is injected into the water tank (6) containing the appropriate amount of pure water (7) using the above-described curing device, the pure water is evaporated while being vulcanized and loaded through the vulcanization humidification supply pipe (10). 5) to harden the resin (4) applied on the chip (3) of the transistor (1). If the vulcanization is left in the humid atmosphere for about 10 hours, the preliminary work is completed.

이렇게 예비경화가 끝난 제품은 다시 종래와 같이 200℃의 오븐에서 24시간동안 경화시킨후, 다시 150℃의 오븐에서 3시간동안 추가로 경화시키므로서 완벽한 경화작업이 이루어지게 되는 것이다.The pre-cured product is cured for 24 hours in an oven at 200 ° C., and then further cured for 3 hours in an oven at 150 ° C. for a perfect curing operation.

이와같은 본 발명의 경화방법은 종래의 고온오븐을 이용한 도포수지의 경화작업전에 예비결화작업으로 순수와 질소를 이용한 가류가습을 이용하여서 도포수지를 상온에서 경화시켜 주므로서 완벽한 경화작업을 꾀할수 있는 것으로, 제품의 제반특성이 향상되고 고온 역바이어스시험등의 신뢰성이 증대되는 효과를 제공받을수 있는 것이다.Such a curing method of the present invention can achieve a perfect curing operation by curing the coating resin at room temperature by using vulcanization humidification using pure water and nitrogen as a preliminary work before the curing operation of the coating resin using a conventional high temperature oven. In this way, the overall characteristics of the product can be improved and the reliability of the high temperature reverse bias test can be increased.

Claims (1)

고압트랜지스터의 제조에 사용되는 도포수지를 경화함에 있어서, 고온 오븐에서 경화하기 전에 순수(H2O)와 질소(N2)에 의한 가류가습을 이용하여서 도포수지를 예비경화시키는 트랜지스터용 도포수지의 경화방법.In curing the coating resin used in the manufacture of the high-voltage transistor, before the curing in a high temperature oven, the coating resin for transistors which precure the coating resin using vulcanization humidification with pure water (H 2 O) and nitrogen (N 2 ). Curing method.
KR1019880002802A 1988-03-17 1988-03-17 Method of coating resin hardening for-transistor KR910003145B1 (en)

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KR1019880002802A KR910003145B1 (en) 1988-03-17 1988-03-17 Method of coating resin hardening for-transistor

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Application Number Priority Date Filing Date Title
KR1019880002802A KR910003145B1 (en) 1988-03-17 1988-03-17 Method of coating resin hardening for-transistor

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KR910003145B1 true KR910003145B1 (en) 1991-05-20

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