KR910001451A - Positive type photoresist composition - Google Patents

Positive type photoresist composition Download PDF

Info

Publication number
KR910001451A
KR910001451A KR1019890008913A KR890008913A KR910001451A KR 910001451 A KR910001451 A KR 910001451A KR 1019890008913 A KR1019890008913 A KR 1019890008913A KR 890008913 A KR890008913 A KR 890008913A KR 910001451 A KR910001451 A KR 910001451A
Authority
KR
South Korea
Prior art keywords
photoresist composition
positive type
type photoresist
group
glycol
Prior art date
Application number
KR1019890008913A
Other languages
Korean (ko)
Inventor
미네오 니시
마사히로 사까구찌
아끼오 미야자끼
Original Assignee
에또 다께또시
미쓰비시 가세이 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에또 다께또시, 미쓰비시 가세이 가부시끼가이샤 filed Critical 에또 다께또시
Publication of KR910001451A publication Critical patent/KR910001451A/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03CPHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00Photosensitive materials
    • G03C1/52Compositions containing diazo compounds as photosensitive substances

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)

Abstract

내용 없음No content

Description

포지티브 타입 포토레지스터(positive type photoresist)조성물Positive type photoresist composition

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (9)

알칼리 가용성 수지, 오르토퀴논디아지도기를 가진 증감제(sensitizer) 및 다음의 일반식(Ⅰ)로 표시되고, 전체 탄소원자수가 10이하인 글리콜의 디에스테르를 함유한 용매를 포함하는 포지티브 타입 포토레지스트 조성물 ;A positive type photoresist composition comprising an alkali-soluble resin, a sensitizer having an orthoquinone diazido group, and a solvent containing a diester of glycol represented by the following general formula (I) and having a total carbon atom number of 10 or less; 여기서 R1, R2, R3및 R4는 수소 원자, 메틸기 또는 에틸기를 나타내고, 이들은 서로 동일하거나 다를 수 있으며, n은 0,1 또는 2이다.Wherein R 1 , R 2 , R 3 and R 4 represent a hydrogen atom, a methyl group or an ethyl group, which may be the same or different from each other and n is 0,1 or 2. 제1항에 있어서, 상기 용매는 일반식(Ⅰ)로 표시되고 전체 탄소원자수가 10이하인 상기 글리콜의 디에스테르 60내지 99중량%와 비점이 50내지 140℃인 유기 용매 40내지 1중량%의 혼합 용매인 포지티브 타입 포토레지스트 조성물.The method of claim 1, wherein the solvent is a mixture of 60 to 99% by weight of the diester of the glycol represented by the general formula (I) and having a total carbon atom of 10 or less and 40 to 1% by weight of the organic solvent having a boiling point of 50 to 140 ° C. Positive type photoresist composition that is a solvent. 제1항 또는 제2항에 있어서, 일반식(Ⅰ)로 표시되고 전체 탄소원자수가 10이하인 상기 글리콜의 디에스테르는 에틸렌 글리콜 디아세테이트, 에틸렌 글리콜 디포르메이트, 에틸렌 글리콜 디프로피오네이트, 프로필렌 글리콜 디아세테이트, 프로필렌 글리콜 디프로피오네이트, 부탄디올 디아세테이트 및 부탄디올 디프로피오네이트로 구성되는 군으로부터 적어도 하나가 선정되는 포지티브 타입 포토레지스트 조성물.3. The diester of the glycol according to claim 1 or 2, wherein the glycol represented by the general formula (I) and having a total carbon atom of 10 or less is ethylene glycol diacetate, ethylene glycol diformate, ethylene glycol dipropionate, propylene glycol A positive type photoresist composition wherein at least one is selected from the group consisting of diacetate, propylene glycol dipropionate, butanediol diacetate and butanediol dipropionate. 제1항 또는 제2항에 있어서, 비점이 50내지 140℃인 상기 유기 용매가 케존, 카르복실레이트, 카보네이트, 에테르 및 알코올로 구성되는 군으로부터 적어도 하나가 선정되는 포지티브 타입 포토레지스트 조성물.The positive type photoresist composition according to claim 1, wherein the organic solvent having a boiling point of 50 to 140 ° C. is selected from at least one group consisting of kezone, carboxylate, carbonate, ether and alcohol. 제 4항에 있어서, 상기 유기 용매가 아세톤, 메틸 에틸 케톤, 디에틸 케톤, 메틸 이소부틸 케톤, 에틸 아세테이트, 프로필아세테이트, 부틸 아세테이트, 디메틸 카보네이트, 디에틸 카보네이트, 메탄올, 에탄올, 프로판올, 부탄올, 메톡시 프로판올, 에톡시 프로판올, 데트라히드로푸란, 디옥산, 프로필렌 글리콜 모노메틸 에테르인 포지티브 타입 포토레지스트 조성물.The method of claim 4, wherein the organic solvent is acetone, methyl ethyl ketone, diethyl ketone, methyl isobutyl ketone, ethyl acetate, propyl acetate, butyl acetate, dimethyl carbonate, diethyl carbonate, methanol, ethanol, propanol, butanol, metha Positive type photoresist composition which is oxy propanol, ethoxy propanol, detrahydrofuran, dioxane, propylene glycol monomethyl ether. 제1항에 있어서, 상기 알칼리 가용성 수지는 노블락 수지, 폴리히드록시스티렌 및 그 유도체, 그리고 스티렌-말레산 무수물 공중합체로 구성되는 군으로부터 선정되는 포지티브 타입 포토레지스트 조성물.The positive type photoresist composition of claim 1, wherein the alkali-soluble resin is selected from the group consisting of noblock resins, polyhydroxystyrenes and derivatives thereof, and styrene-maleic anhydride copolymers. 제1항에 있어서, 상기 증감제는 1,2-나프토퀴논디아지도-5-술폰산, 1,2-나프토퀴논디아지도-4-술폰산 및 1,2-벤조키논디아지도-4-술폰산으로 구성되는 군으로부터 선정되는 것중 하나의 에스테르 또는 아미드인 포지티브 타입 포토레지스트 조성물.The method of claim 1, wherein the sensitizer is 1,2-naphthoquinone diazido-5-sulfonic acid, 1,2-naphthoquinone diazido-4-sulfonic acid and 1,2-benzoquinone diazido-4-sulfonic acid Positive type photoresist composition, which is an ester or amide of one selected from the group consisting of: 제1항에 있어서, 상기 알칼리 가용성 수지 대 상기 증감제의 비가 100:5내지 100중량%인 포지티브 타입 포토레지스트 조성물.The positive type photoresist composition of claim 1, wherein the ratio of the alkali-soluble resin to the sensitizer is 100: 5 to 100% by weight. 제1항에 있어서, 상기 조성물중 상기 알칼리 가용성 수지 및 상기 증감제의 농도가 3내지 50중량%인 포지티브 타입 포토레지스트 조성물.The positive type photoresist composition according to claim 1, wherein the concentration of the alkali-soluble resin and the sensitizer in the composition is 3 to 50% by weight. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890008913A 1988-06-28 1989-06-28 Positive type photoresist composition KR910001451A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP16043988 1988-06-28
JP63-160439 1988-06-28

Publications (1)

Publication Number Publication Date
KR910001451A true KR910001451A (en) 1991-01-30

Family

ID=15714959

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890008913A KR910001451A (en) 1988-06-28 1989-06-28 Positive type photoresist composition

Country Status (2)

Country Link
JP (1) JPH0284649A (en)
KR (1) KR910001451A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4647418B2 (en) * 2005-07-19 2011-03-09 ダイセル化学工業株式会社 Resist composition

Also Published As

Publication number Publication date
JPH0284649A (en) 1990-03-26

Similar Documents

Publication Publication Date Title
US5667938A (en) Acid scavengers for use in chemically amplified photoresists
James et al. The metabolism of phenethyl bromide, styrene and styrene oxide in the rabbit and rat
KR870002181A (en) Radiation sensitive resin composition
GB717708A (en) Improvements in photomechanical resist compositions
KR920022043A (en) Radiation-sensitive resin composition
KR930004807A (en) Positive photoresist compositions and novel tetra (hydroxyphenyl) alkanes with improved resolution and reduced crystallization tendency
KR950001415A (en) Photoresist composition
ES399057A1 (en) Dereivatives of 17alpha-hydroxyandrost-4-ene-17beta-carboxylic acids
KR860008476A (en) Deep UV Lithographic Resistant Compositions and Uses thereof
JPS5562446A (en) Photosensitive resin composition for screen printing plate
KR930002294A (en) Oligomeric Compounds Having Acid-Degradable Protective Groups and Positive-functional Radiation-Sensitive Mixtures Prepared therefrom
KR970002470A (en) Positive Photoresist Composition
KR960042214A (en) Positive type resist composition
KR910001451A (en) Positive type photoresist composition
KR930002300A (en) Compounds having acid-degradable protecting groups and positive-functional radiation-sensitive mixtures prepared therefrom
KR900002125A (en) Resist composition
KR920019729A (en) Acid-degradable compounds, positive-acting radiation-sensitive mixtures containing the same, and radiation-sensitive recording materials prepared using the mixture
KR101492403B1 (en) Dissolution accelerator and photoresist composition including the same
JPS6480944A (en) Photosensitive resin composition
KR950704383A (en) USING ALEWIS BASE TO CONTROL MOLECULAR WEIGHT OF NIVOLAK RESINS
US5849461A (en) Chemically amplified positive resist composition
KR940007604A (en) Photoresist composition
KR890016424A (en) Positive-working photosensitive composition
KR950013579B1 (en) O-naphthoquinone diazide sulfonic and esters and recording material prepared thereform
JPH07219217A (en) Chemically amplified resist composition

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination