KR910000754B1 - Television picture tube with aperture mask having recess therein - Google Patents

Abstract

No content.

Description

Television picture tubes

1 is a perspective view showing a single line of a visible line opening of a television aperture mask.

2 is a plan view or cone side view of the visible line opening of FIG.

3 is a visible line opening bottom view or inclined side view of FIG.

4 is a cross-sectional view of a television receiver.

5 is a partial side view of the aperture mask and the television receiver.

6 is a partial side cross-sectional view of an aperture mask and a television tube.

7 is a front schematic view of an aperture mask having a plurality of openings.

8 is another alternate view of the aperture mask of a television receiver.

9 is an enlarged side view of the central opening of the aperture mask.

10 is an enlarged side view of the aperture mask of FIG.

11 to 15 are cross-sectional views taken along the cutting line of FIG.

Fig. 16 is a resist pattern diagram by the Capacitor H shape etching technique.

Fig. 17 is a resist pattern diagram of the capacitive H-etching technique at different positions of the aperture mask.

Fig. 18 is a resist pattern diagram for manufacturing the aperture opening obtained by combining the etching techniques of the capillary H shape and the I shape.

19 is an enlarged sectional view of the cone side of the aperture.

20 is an enlarged cross-sectional view of the aperture inclination side of FIG.

21 to 25 are selected cross-sectional views taken along the cutting line of FIG.

Fig. 26 is an enlarged view of the cone side of the aperture.

FIG. 27 is an enlarged view of the inclination of the aperture of FIG. 26. FIG.

28 to 32 are selected cross-sectional views taken along the cut line of FIG.

* Explanation of symbols on the main surface of the drawing

10: aperture mask 10A: cone side

10B: grade side 15: recess

11,11A: edges 12,12A, 12B, 12C: edges

14A, 16A: end edges

14,16: undercut surface

T: Thickness of Aperture Mask A: Lower Cutting Length

θ: Ensemble cutting angle T1: Residual material thickness

30: Television receiving center 31: Enclosure

33: prong 34: face plate

35: connection coil 37: deflection coil

39 face plate 47 opening

48: Aperture mask 40, 41, 42: phosphor strip

45: cone side 45A: recess (figure 5)

53,54: edge surfaces 50: tie bar

50A: cone side surface 50B: inclined side surface

51: lower inner surface 52: upper inner surface

44: cone side surface 45: cone side surface

70: aperture mask 71: center

72: middle aperture mask area 73: peripheral portion

75: opening or aperture

81: cone side resist pattern (resist tongue: resistant tonque)

82: inclined side resist pattern

84: inclined side resist pattern 85: cone side etching resist pattern

b: length of resist tongue b1, b2: offset

1c: opening length d: recess length

1g: opening length e: length of resist tongue (inside length)

Wc: Connery

90: mask portion or visible line boundary (figure 11, 12)

70g: sloped surface 70c: cone surface

96: tie bar surface 100: aperture

104: side line of sight boundary 101: mask portion

110: aperture 102: mask portion

111: side boundary surface 107: overlapping area

112: end surface

The present invention relates generally to color television water tubes. More specifically, it relates to a color television water pipe composed of an aperture mask having a plurality of visible openings on one side of an aperture mask near a phosphor screen. Conventional color television receivers have long been known as in many known patents. A representative example of a conventional color television aperture tube is US Patent No. 2,690,518 (Inventor Fyler et al.) Which describes a glass tube having three electron guns located on the back of the tube. The electron gun directs the electron beam onto a thin metal sheet TV aperture mask or shadow mask, and a glass face plate is located at the opposite end of the tube and on the aperture mask. Adjacent. On this glass plate are three groups of phospor dors or stripes of three basic colors: red, blue and green. Since the aperture mask opening is located with respect to the indot, it only collides with the indot or instrip engaged with the opening of the mask of the electron from each electron gun.

There is a problem in the aperture mask that is precisely etched into small holes, and the art is researching and developing an etching process for removing metal on one surface of the aperture mask. This effective treatment process allows thinner flakes to be formed in each part of the aperture mask so that the flakes become thinner, so that smaller openings are precisely placed in the flakes of the aperture mask against the aperture mask with the thinner flakes. Can be etched. In such an etched aperture mask, the side from which most of the metal is removed is used as the cone side, and the opposite axis thereof is the inclined side. As a result of this, due to the shape of the etched opening, the inclined side of the aperture mask is positioned toward the electron gun with the cone side in the in-screen direction. Various aperture masks used as color television receivers include slot masks with thin slots as in US Pat. No. 3,883,770 (yamada et al.). This US Pat. No. 3,883,770 shows a series of thin slots with bridges or tie bars located between the slots to provide structural strength of the mask. This bridge or tie bar is located on the inclined side of the aperture mask opposite the electron gun with the cone side facing the in-screen. In addition, U.S. Patent No. 3,809,945 (Inventor Roeder) shows an aperture mask that is partially etched on the periphery of the aperture mask as it is used, thereby allowing the addition of a large number of opposing rows. Provide intermediate yield strength.

Another type of conventional aperture mask is described in US Patent No. 3,787,939 (inventor Tomita), which shows two aperture masks which are etched on opposite sides. This patent (FIG. 1) shows the operating position of the electron beam emitted through the opening of the inclined side of the aperture mask. The shape of each hole is on the side adjacent to the in-screen in the shape of a frustum of larger diameter cones. U.S. Patent No. 4,168,450 (Inventor, Yamuchi, etc.) shows an aperture mask, which has a tie bar or a bridge formed at an angle of θ so that the center projection of the bridge blocks the electron beam. The method for covering the phosphor pattern is described in US Pat. No. 3,770,434 (Inventor Law), where a coating material is used on the opposite side of the aperture mask.

In the conventional television receiver, in particular, in the conventional invention using a narrow slot, an aperture mask having an inclined side facing the electron gun and a cone side facing the in-screen is provided to provide an inferior color. It is a basic process to minimize electron scattering that generates color. U. S. Patent No. 3,882, 347 (inventor Suzuki et al.) Shows a television slot mask with a thin slot.

In FIG. 4 of this patent, the enlarged side surface in the glass surface plate direction or the cone side surface and the inclined side surface in the electron gun direction are shown. This patent also shows a tie bar or bridge, which is located on the slot end with a wider portion of the tie bar facing in the inclined side direction than the cone side. Accordingly, the present invention constitutes a television receiver having an aperture mask formed by forming a cone side facing the electron gun, the aperture mask having a visible line opening on the surface of an aperture mask facing side forming the visible line opening boundary line. It provides an improvement of the color television water tube tube, which is formed by the part. The resulting color television receiver has better brightness and purity than conventional television receivers.

As described above, the present invention allows the aperture mask to be attached to the color television water pipe having the inclined side or the cone side facing the electron gun. Accordingly, the present invention constitutes a color television water pipe having an aperture mask having a plurality of visible openings. The aperture mask consists of a sheet of material with visible openings, a portion of which is partly formed by the cone-side surface agent, and the remaining portion of the visible openings is changed according to the position of the aperture mask. It is composed of inclined side members of size and shape.

When embodying the present invention according to the accompanying drawings as follows.

Reference numerals 10 in FIGS. 1, 2 and 3 are generally the aperture masks of a portion of the color television with cone side 10A and inclined side 10B. Since the larger opening or recess 15 is set, the cone side surface 10A is the cone side, and the inclined side surface 10B is the inclined side. In the typical use of the aperture mask of a television receiver, the inclined side faces the electron gun, while the larger side faces the television receiver.

This type of positioning provides the best image for a conventional etched mask. A visible line opening having both ends composed of the cone side 10A and the inclined side 10B of the aperture mask 10 is located in the aperture mask 10. A recess formed in the cone side surface 10A by a pair of end portions 11 and 11A and a pair of edges 14A and 16A both located in the plane of the cone side surface 10A of the aperture mask 10. A recess 15 having a cone 15 at the cone side 10A is located at the cone side 10A. Ends 11 and 11A are connected to end edges 14A and 16A to form a closed boundary in the plane of cone side 10A. Thus, the end portions 11 and 11A and the edges 14A and 16A are joined to the side wall of the recess 15 having the cone side surface 10A.

The side walls of the recesses 15 have undercut surfaces 14 and 16, which are connected to end edges 14A and 16A, respectively. The lower cutting surfaces 14 and 16 are cut downward in the cone side surface 10A and cut in the outer radial direction of the inclined side surface 10B in the edges 14A and 16A. The thickness of the aperture mask 10 is represented by T and is generally in the range of 0.004 "to 0.008", and the lower cutting length is represented by A. The lower cutting angle is represented by θ, and the thickness T1 of the residual material forming the bottom surface of the recess 15 is actually smaller than the thickness of the aperture mask 10. In Fig. 3 (inclined side), the slanted slot of the inclined side 10B constituted by the edges 12A, 12, 12B and 12C, which are all located in the plane of the bottom or inclined side 10B, is schematically shown. The edges 12 and 12A are straight while the edges 12B and 12C are curved.

The outer opening of the X-X ray is composed of an opening including curved edges 12B and 12C. The visible line openings penetrating the aperture mask 10 are formed by the edges 12A and 12 constituting the longitudinal openings and the edges 14A and 16A constituting the yellow portions of the visible line openings.

In the oblique side cross section (Fig. 3), the edges 12 and 12A also constitute longitudinal openings and the edges 14A and 16A constitute the transverse portion of the visible opening. The inclined side surface of the aperture mask 10 is different from the cone side surface of the aperture mask 10, but the visible line openings through the aperture mask 10 are the same. The two straight lines X-X are located on both ends of the narrow slot and represent the separation point between the straight section of the edges 12A and 12C and the curvature of the edges 12B and 12C. As in this specific embodiment, the straight line XX is located on the outer surface of the unit edges 14A and 16A so that the line of sight opening of the aperture mask 10 is a set of straight edges having a substantially square corner. You can see that it is configured.

The curved end is characterized by cutting operations such as chemical etching. Thus, while the inclined side 10B exhibits a thinner opening that is actually longer than the visible line opening, the lower cutting surfaces 14, 16 are formed by the material cutting downwards at the edges 14A and 16A and sufficiently deeply. Protruding so that the edges 12B and 12C do not form a boundary of the visible line opening through the aperture mask 10.

When forming the narrow opening of the aperture mask, the recess 15 of the aperture mask 10 is etched by an etching process. This etching process is characterized by continuing until a recess 15 having downward cut surfaces 14 and 16 is constructed. The size and shape of the lower cut surface can be controlled by the amount of etchant and the etching time and can generally be treated by one of ordinary skill in the art. After the eles 15 are formed on one side, their narrow openings are etched on their opposite sides.

If necessary, the thin openings can be formed during etching of the recess by spraying the etching solution on the opposite side cone side and the inclined side surfaces 10A and 10B simultaneously. After etching, the narrow slots exhibit radial corners as in FIG. The process of forming the visible line opening, that is, the etching process continues until the etchant passes through the material of T1. After the etching solution has penetrated, the etching solution is removed so as to have a narrow opening composed of the edges 12A, 12B, 12C and 12. The straight line X-X is formed by etching in the radial portion of the narrow opening.

3 shows that the radial edges 12B and 12C of the narrow opening protrude into the recess 15 and the lower cutting surface 16. Thus, the edges 12B and 12C as the radius corners of the aperture mask 10 do not form part of the visible opening of the aperture mask 10. The above mentioned products and methods have been described with respect to quadrilateral openings, but it is clear that the above treatment method can be used to construct other visible openings that are difficult and impossible with the prior art.

Example 1

In order to explain the improvement of light transmission, a conventional television aperture mask was etched to form a narrow slot having a parallel side and a circular end. The slot size is as follows.

Slot width 175.2 micrometers (μm)

Tie bar width 145 micrometers

Slot length 613 micrometers (maximum size)

The light transmission measured through this slot was measured in 17.7 units. The aperture mask was made by this invention, and the visible line opening was made into substantially quadrangular shape by 1st, 2nd and 3rd degree. The size of this four-sided visible line opening is as follows.

Slot width of 174.8 micrometers (μm)

Tie bar width 144 micrometers

Slot length 614 micrometers

Transmission through this aperture showed an increase of about 4% in 18.36 units or light transmission. However, in the second aperture mask according to the present invention, since the sizes of the two holes are not exactly the same, the compensation of the area indicates that the second aperture mask actually has a larger light transmission capacity of about 6.5%. It was. In Fig. 4, reference numeral 30 denotes a sectional view of a television receiver using the line of sight aperture mask of the present invention.

The television receiver consists of a glass enclosure (31) having a base and prongs (33) to which electrons of the television set are attached. A focusing coil 35 that focuses the electron beam is located outside the neck of the television receiver and the electron beam converges when the electron beam passes through the opening 47 of the aperture mask 48. converge). A deflection coil 37 which sweeps the electron beam through the aperture mask 48 is adjacent to the focusing coil 35. The aperture mask 48 is with a number of slender openings 47 located within the mask. An phosphor strip 40 is located directly behind the narrow opening 47.

Three inlets are located behind each opening in the cross section, but only one ins can be seen in this cross section. This instrip consists of a basic color, i.e. red, blue and green, and exhibits a suitable color on the face plate 39 of the television receiver 30 when excited by electrons.

In order to explain the operation of the television receiver according to the present invention will be described in detail with reference to FIGS. 5 and 6 show a plan view of a part of the television aperture mask and the television receiver and a side cross-sectional view of the television receiver, respectively. The front enclosure of the glass enclosure of the television receiver, the faceplate of which is denoted by reference numerals 39, 41 and 42, of which narrow openings are located in the aperture mask 48. Are indicated by red, blue, and green insets arranged parallel to the longitudinal direction. 7 schematically shows a slot arrangement of a typical aperture mask having a series of thin slots. A suitable black light absorbing medium is located between the inlets 40, 41 and 42 that does not develop any color when impinged by the electrons.

In Fig. 5, the aperture mask is indicated by reference numeral 48, and the cone side 45 is opposed to the electron gun, and the inclined side 46 is opposed to the inslip located on the face plate 34. When most of the metal is removed from the cone side 45 to form the recess 45A, this side becomes the cone side and is positioned opposite the electron gun. A typical representative aperture mask in which the cone side is located is opposite to the phosphor side. 5 shows how the edge surfaces 53 and 54 of the inclined side restrict electrons in the rear direction. FIG. 6 shows a cross-sectional side view of the aperture mask 48 with reference numeral 39 representing the face plate and 40 representing the instrip.

The aperture mask 48 is composed of an opening 45A on the cone side surface 45 and a narrow opening on the opposite side surface thereof. The tie bar or bridge is conventionally located with the narrow end of the tie bar, which is opposite to the inslip 40 or the tie bar, which is composed of the inclined side 46 on the cone side 45. FIG. 6 shows a tie bar 50 consisting of the surface 50B on the inclined side, the surface 50A on the cone side, the inner surface 510 on the lower tie and the upper inner surface 52 on the upper tie 50. The upper and lower boundary of the visible line opening of the aperture mask 48 consists of joining the surface 44 of the cone side and the upper inner surface 52 to join the inner surface 51 on the lower tie bar and the surface of the cone side. In fact, a number of tie bars located in a certain space are configured to accurately distinguish the openings by excitation of instrips located along the television receiver.

When the aperture mask has a cone side facing the electron gun, it must have the bottom of the recess area, which is located adjacent to the side of the line of sight opening and bent sufficiently flat or at an angle so that it is on the bottom of the recess area. Care should be taken to ensure that the electron beam colliding with the beam does not deflect through the aperture opening of the aperture mask. Primarily, when the bottom of the recess region is parallel to the surface of this mask cone side, scattering electrons passing through the visible line opening are not obtained. In addition, the recess side wall portion having the cone side of the aperture mask facing the electron gun and not forming part of the visible line opening is formed deep enough at the visible line opening of the aperture mask, so that the passage of the electron beam is formed by the cone of the aperture mask. Unobstructed by side or recess area side walls. Another embodiment of the aperture mask of the television receiver is shown in FIGS.

8 shows a front view of the aperture mask 70 of the line of sight television attached to the television receiver 30. As shown in FIG. The television aperture mask 70 constitutes a plurality of narrow openings 75, which are constantly arranged in vertical rows on the mask. Reference numeral 71 is a central portion of the aperture mask 70, and reference numeral 73 is a peripheral portion of the aperture mask 70. Reference numeral 72 denotes an area of the aperture mask 70 and an intermediate mask area between the central portion 71 and the peripheral portion 73.

These areas represent an enlarged portion of the aperture opening 75 and show the size and shape change of the aperture depending on the position of the aperture on the aperture mask 70. In general, the line of sight mask shown in FIG. 8 has a recess to surround each of the apertures. This recess forms a cavity on the mask surface, which is a thin mask portion that can be etched more precisely and precisely than the thin mask portion. The surface of the aperture mask constituting this recess is the side of the cone of the aperture, so as to form an aperture opening with precise and accurate size and shape. It is preferable to have a bottom.

When the thickness of the mask is relatively uniform in the thin region of the recess bottom surface, the openings etched through the thin region mask can be etched to a relatively precise size and shape, thereby providing maximum electron transmission. In general, the larger the size of the recess with respect to the size of the aperture opening, the more precisely the size and shape of the aperture can be etched. However, larger recesses make the mask weaker structurally.

As a result, one of the objects of the present invention is to optimize the shape and size of the openings of the mask, and at the same time, to maintain the mask to prevent deformation due to temperature changes occurring in the television water pipe. have. As a result of the study by the present inventors, a method of obtaining a bottom recess surface that forms a shape that precisely forms a visible opening that does not oversize a cone and does not weaken a mask is based on Capital H. It is to use the technology defined by the shape technology. Arrangement of the etching liquid resist pattern obtained by this capillary H-shape technique can be shown by FIG. 16 and FIG.

16 and 17 show schematic views of the etching liquid resist pattern in which the cone side resist pattern is denoted by 81. In order to explain the inclined side etching liquid resist pattern with respect to the cone side etching liquid resist pattern 81, the inclined side etching liquid resist pattern 82 is shown with the broken line superimposed on the cone side resist pattern 81. As shown in FIG. Although the inclined side etching liquid resist pattern 82 does not appear on the side of the same mask as the cone side resist pattern 81, the registration of the etching liquid resist pattern in FIG. 16 is the etching liquid resist in which an aperture having a final size and shape is formed. Positional coordination between patterns.

In FIG. 16 and FIG. 17, the length b1 is formed inward by an offset length or a cone-shaped resist pattern 81, and is a resist tongue. The opening length on the cone side resist pattern 81 is represented by 1c, and the opening length of the inclined side resist pattern 82 is represented by 1g having the cone ratio Wc. As shown in FIG. 16, the visible shape of the etching resist pattern 81 on the cone side generally has a capacitive H shape.

When the capillary H-shape technique is preferably used, the length (b1) of the resist tongue at the center of the aperture mask area is the highest, which depends on the thickness of the processing material, the composition of the processing material, and the desired final size of the aperture. Is determined. In general, the resist tongue length b by the capillary H-shape technique is reduced in the radially outward direction at the center of the aperture mask 70. For example, FIG. 16 shows a relatively large offset length b1 at the mask region center portion 71, while FIG. 17 shows a smaller offset length b2 at the mask region peripheral portion 73. FIG.

That is, one of the characteristics of the present invention is that when the tongue of the large-shaped resist pattern is reduced in size, the size of the large area is increased as it proceeds radially outward from the center of the mask. 9 to 15 illustrate the shape of the aperture etched according to the Capitol H shape technique described in FIG. FIG. 9 shows a cone side cross-sectional view of a portion of the aperture mask 70 with an enlarged opening or aperture 75, and FIG. 10 shows the same aperture at the same location center 71 of the aperture mask 70. FIG. An inclined side cross-sectional view of (75) is shown. 9 and 10 show the visible line backside boundary of the aperture 75 composed of the mask portion 90.

On the other hand, the end boundaries of the visible line opening of the aperture 75 are composed of the mask portion 91. To illustrate how the capillary H-shape technique affects the final size of the aperture 75 and the shape of the recesses, FIGS. 11 to 15 are provided and the cut lines of FIGS. 11 to 15 and 9 are shown. Various cross-sectional views taken along the way are shown.

By way of example, FIG. 11 shows a cut slice (Slice) taken along line 11-11 to reveal the shape of the line of sight boundary 90 at the center of the aperture 75 and the inclined side surface 70g.

Reference numeral d denotes the length of the recess before the surface of the inclined side starts, and is composed of a curved surface in the upward direction up to the cone side surface 70c of the aperture mask 70.

Lines 12-12 (FIG. 12) are actually cross-sectional views of the cut portion Slice taken at the end of aperture 75, and FIG. 12 shows that the recess length d is slightly smaller than in FIG.

Further, it is slightly wider at the end of the aperture 75 than the center of the aperture 75 of the mask portion 90 constituting the visible line boundary of the side surface.

It has been found that the length d may have optimum conditions for forming etched openings that are precise but of size and shape if kept uniform from end to end of the recess.

However, to do this, the material sufficient to weaken the mask is sufficiently removed.

Eventually the size of length d is increased from its center to its end in order to prevent the weakening of the mask at a point that prevents the operation of the television receiver.

On the other hand, the size of the length d can vary from mask to mask, and in general, the size of length d near or near the midpoint of the mask 70 increases and approaches the end of the aperture.

To adjust or maintain the length d at a relative distance as in FIGS. 11 and 12, the resist pattern is used to form the cap H shape technique as in FIG.

The back surface comprises only two line boundaries, thus providing FIGS. 13 and 14 showing the surface constituting the line of sight on the end of aperture 75.

FIG. 13 shows a tie cross-sectional view constituting a cut portion taken along line 13-13 of FIG.

This tie bar region has a surface 91 constituting the end of the visible line boundary, and the surface 91 is formed of the aperture mask 70 as compared with the surface located on the inclined side surface 70g of the aperture mask 70. Note that it is located on the cone side surface 70c.

The cut cross-section taken along line 14-14 of FIG. 9 as in FIG. 14 shows how the tie bar shape changes as the side end of the aperture 75 is approached further. However, surface 91 constitutes a cone-side line of sight opening boundary at the end of aperture 75 even if it is slightly longer and inclined when approaching the side end of the aperture. The tie bar surface 96 is an overlapping area visible through the aperture at the boundary side (FIG. 10).

FIG. 15 shows a cross-sectional view of the cut thin cone taken along line 15-15 of FIG. 9 and arrow a indicates the point where the aperture end ends with respect to the recess. As shown in FIGS. 9 to 15, even if the actual boundary defining the shape and size of the visible opening is changed from one part of the aperture to another part, the opening of the visible line of the aperture is relatively constant by the capillary H shape technique. do.

The effect of the capillary H shape etching technique has been described above with respect to the aperture located at the center of the mask. At the center of the mask, the electron beam generally collides perpendicularly to the aperture mask.

In FIG. 10, it should be noted that unnecessary electron scattering can be minimized when the two tie bar overlapping areas visible from the inclined side of the mask can be kept at a minimum.

When the inclined side of the mask faces the electron gun, it is confirmed that the size of the tie bar overlapping area is not more important on the periphery of the mask than the center of the mask.

That is, since the electron beam collides with the aperture image smaller at the periphery than the center of the mask, the offset area is larger in the periphery area than the center of the mask and at the same time maintains electron scattering below a predetermined level.

As a result, the tie bar overlap area can be made slightly larger in the periphery than the center of the mask. This feature can be obtained by reducing the length b of the resist tongue piece on the aperture located around the mask.

Accordingly, the present invention constitutes a structure that provides a minimum tie bar area at the center of the aperture mask 70 and increases the tie bar overlap area around the mask. Since the angle of the electron beam changes in the radially outward direction, the visible effect of electron scattering is maintained at a relatively constant value through the mask even if the electron deflection surface of the tie bar overlapping region is increased in the peripheral direction of the mask. The above effects can be obtained with various sizes of apertures, and in practice, the size of the aperture opening and the thickness of the bridge can be determined by trial and error.

In order to make the shape and size of the aperture larger, the present inventors provide another compensation technique that can be used with the above-mentioned capital H-shape technique.

The second technique by the present inventors is the Capitol I shape technique.

Figure 18 is provided to understand the combination of the capillary H shape technology and the capillary I shape technology.

18 shows the cone side etching resist pattern 85 obtained by combining the capillary H shape technology and the capillary I shape technology.

In order to explain the relationship between the cone side etching resist pattern 85 and the inclined side resist pattern 84, the inclined side resist pattern 84 is shown with a broken line.

The basic difference between FIG. 16 and FIG. 18 is that the resist pattern 85 is formed inside the resist tongue with an inner length e.

Capillary H-shape and I-shape techniques are the most effective for use in the installation of the cone side facing the electron gun with the composite cape H and I-shape technology. This side resist tongue length e has the largest central aperture of the mask, and the aperture located around the mask is reduced.

Since the electron beam collides with the aperture mask 70 at a right angle at the center of the mask, the cone width is minimum.

Thus, the cone region need not be wide at the center of the aperture mask, such as at the end of the aperture where the electron beam impinges at an angle.

This is especially the case when the cone side of the aperture mask faces the electron gun.

19 to 25 degrees showing the aperture shape in the center portion 71 of the aperture mask to explain the combination of the capillary H shape and the I shape technology on the aperture, and the upper portion at the corners and the peripheral portion 73 of the aperture mask. 26 to 32 show the shape of the shape.

As in FIG. 18, the shapes of the apertures etched according to the capillary H shape and the I shape technology will be described with reference to FIGS. 19 to 25. FIG.

19 shows a cone side cross-sectional view of an aperture mask having an enlarged aperture 100 formed of an aperture mask at the aperture mask position indicated by reference numeral 71. FIG. 20 shows the inclined side cross-sectional view of the same aperture 100 at the same position of the aperture mask 70.

The visible line opening or boundary penetrating the aperture mask is constituted by opposing side mask portions of the mask.

19 and 20 show the rear boundary of the visible opening shown by the mask portion 101, and at the same time, the end boundary of the visible opening is constituted by the mask portion 102, and the overlapping region is indicated by reference numeral 107. .

To illustrate how the shape of the recesses and the H-shaped and I-shape techniques combined with the final size of the aperture 100 are affected, descriptions are made with reference to FIGS. 21 through 25 and the cut line of FIG. 19. The cross-sectional shape indicated by

By way of example, FIG. 21 shows the line of sight of aperture mask 70 with a cut portion taken along line 21-21 of FIG.

Reference numeral d denotes a curved surface in the upward direction up to the cone side surface of the aperture mask at the recess length of the region before the surface starts.

The cut portion (FIG. 22) taken along line 22-22 in FIG. 9 is substantially the end of aperture 100 in a cross-sectional view similar to FIG.

FIG. 22 shows that the length of the recess indicated by d is slightly shorter than FIG. In addition, the part of the mask which consists of the side visibility line boundaries 104 is slightly wider than the aperture end part 100. As shown in FIG.

On the other hand, it can be like this only by the capillary H-shape technology, but has a Y1 size at the center of the aperture 100 (FIG. 21) and a Y2 size at the end of the aperture 101 in combination with the capillary I-shape technology.

When the aperture width of the aperture is reduced in the center of the aperture mask, it is not disturbed by the electron beam almost perpendicular to the aperture at the center of the mask.

This smaller cone width can be tolerated in the central region of the aperture mask. On the inclined side of the mask of the side surface 101, a visible line boundary of the two apertures 100 is formed, and the tie bar region surface 102 forms a visible line boundary on the cone side of the aperture mask.

As shown in FIG. 24, the cross-sectional view taken along the 24-24 line of FIG. 19 is closer to the back edge of the aperture having the overlapping area 107 surface forming the boundary of the visible line opening at a certain area of the aperture opening. It shows how the tie bar shape changes.

FIG. 25 is a narrow cross sectional view of the cone taken along line 25-25 of FIG. 19 showing where the end of the aperture ends with an arrow a and showing how it is positioned relative to the recess.

As shown in Figs. 19 to 25, the visible line opening through the aperture in the capillary H shape and I shape technology is the same even if the actual boundary that forms the shape is changed to another part as part of the aperture.

In order to know how the aperture shape changes around the mask, the aperture around the mask is enlarged as shown in FIGS. 26 to 32.

FIG. 26 shows a cone side view of the aperture 110 and FIG. 27 shows an inclined side cross-sectional view of the aperture 110. The aperture 110 has a side boundary surface 111 constituting the side boundary and an end surface 112 constituting the end boundary as an overlapping region shown by reference numeral 115.

28 and 29 show the shape of the surface 111, and FIGS. 30 and 31 show how the tie bar surface 112 constituting the end boundary changes from the center to the outward direction.

On the other hand, FIG. 32 shows what shape the recesses have for the aperture ending at the point indicated by the arrow a.

26 to 32 show the size or width of the cone side recess and at the same time show how the shape of the different openings becomes almost uniform in size Y2 along the length of the cone side recess.

That is, as it progresses radially outward, the resist tongue length e is reduced so that the cone has the full width at the aperture located around the mask.

A wider cone around the mask is advantageous because the electron beam must go straight to the peripheral aperture opening at an angle of almost 90 degrees or less.

As such, the cone of the full width at the periphery of the mask causes the edge of the cone to interfere with the electrons straight at the peripheral aperture opening.

Claims (10)

Insulating a phosphor into a plurality of phosphor regions having a face plate that is a viewing surface at one end and generating three basic colors of light on the face plate, An enclosure with at least one eletron gun, and an inclined side and a second side, the first side being located near the face plate and having a plurality of visible openings. An aperture mask having a surface formed by forming an in cone side to form a partial outline of the visible opening, and an outline of a part of the visible opening located near the cone side of the aperture mask. one of the plurality of visible openings constitutes an aperture through which electrons pass and is partially bounded by the surface in the vicinity of the inclined side of the aperture mask; And an inclined side surface of the aperture mask facing the face plate between the electron gun and the instrap, and a partial boundary near the cone side surface of the aperture mask, the aperture mask facing the electron gun. Positioning the cone side to act as a shield of the cone side of the aperture mask to form the aperture mask cone side which prevents electrons from colliding on the incompatible creep. Color television water hall characterized by. A recess according to claim 1, wherein a recess is positioned around each of the plurality of visible openings, the recess forming a center portion and an end, the recess being more centered than at the end of the recess. The color television water pipe characterized in that it has a large length. The surface of the inclined side portion of the aperture mask has a tie bar overlapping area having a smaller visible line opening in the center of the aperture mask than a visible line opening in the periphery of the aperture mask. The color television water pipe, characterized in that the overlap area). The color television receiver as claimed in claim 2, wherein the recess has one width, and the center width of the recess is larger than the recess end width. 5. The color television receiver as claimed in claim 4, wherein a width of the center portion of the recess is smaller than a width of the recess center portion surrounding one visible line opening located at the periphery of the aperture mask. Enclosure constituting a phosphor strip having a face plate at one end and generating light of three basic colors on the face plate, and at least one electron gun that excites the instrip ( an inclosure) and a plurality of visible line openings located near the face plate, each having an end portion and a central portion to form an inclined side surface, which is a first side, and a cone side, which is a second side, to form an aperture mask. An aperture mask having a surface constituting an outline of a portion of the visible opening opening located near the inclined side surface, and a surface constituting the outline of a portion of one visible opening opening located near the aperture mask cone side surface. Forming an opening through which electrons pass through one of the plurality of visible openings, the opening being partially defined by the surface near the inclined side of the aperture mask. A boundary between the cone side of the aperture mask and the surface, and a partial boundary between the electron gun and the inlet; an inclined side surface of the aperture mask facing the face plate; and an aperture mask facing the electron gun. The cone mask surface of the aperture mask is formed so that the cone side of the aperture mask acts as a shield so that electrons do not collide on the inadequate insulator. Color television water hall characterized by. A method of manufacturing an aperture mask for a television to be inserted into a television receiver, comprising: resist tongues formed by forming a resist H-shaped resist pattern on one side of the aperture mask; ) To form the resist pattern formed on the opposite side of the aperture mask, and then etching the aperture mask to form a visible line opening of the aperture mask. The method characterized in that the configuration of the process. 8. The method of claim 7, wherein the step of forming the resist pattern is performed to form a resist tonques having a smaller size when forming an aperture resist pattern located radially outward from a center of the aperture mask. The method comprising the step of forming a. 8. The method as set forth in claim 7, wherein the resist pattern is formed of a lateral resist tongue to reduce the exposed area of the aperture mask to laterally etch. 10. The method of claim 9, wherein the lateral resist tongue comprises forming a process around the aperture mask at a central portion of an aperture mask that is larger in size than a lateral resist tongue positioned about the aperture mask. The method characterized in that.

Images