KR900015397A - Manufacturing method of mirror surface for laser diode by 2 step chemical angle method - Google Patents

Manufacturing method of mirror surface for laser diode by 2 step chemical angle method Download PDF

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Publication number
KR900015397A
KR900015397A KR1019890003619A KR890003619A KR900015397A KR 900015397 A KR900015397 A KR 900015397A KR 1019890003619 A KR1019890003619 A KR 1019890003619A KR 890003619 A KR890003619 A KR 890003619A KR 900015397 A KR900015397 A KR 900015397A
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KR
South Korea
Prior art keywords
laser diode
mirror surface
step chemical
etching
manufacturing
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Application number
KR1019890003619A
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Korean (ko)
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KR910008440B1 (en
Inventor
권영세
유희준
Original Assignee
이상수
한국과학기술원
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Priority to KR1019890003619A priority Critical patent/KR910008440B1/en
Publication of KR900015397A publication Critical patent/KR900015397A/en
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Publication of KR910008440B1 publication Critical patent/KR910008440B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Abstract

내용 없음.No content.

Description

2단계 화학식각법에 의한 레이저 다이오드용 거울면 제작방법Manufacturing method of mirror surface for laser diode by 2 step chemical angle method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 방법에 의한 레이저 다이오드용 거울면 제작공정 설명도,1 is an explanatory diagram of a mirror surface fabrication process for a laser diode by the method of the present invention,

제2도는 본 발명의 방법에 의해 식각이 실제로 행해지는 과정을 보인 사진대용 예시도,2 is a photographic substitution example showing a process in which the etching is actually performed by the method of the present invention,

제3도는 본 발명의 방법에 의한 거울면의 모서리각 변화를 시간에 대한 함수로 나타낸 그래프,Figure 3 is a graph showing the change in the angle of the corner of the mirror surface by the method of the present invention as a function of time,

제4도는 본 발명의 방법에 의한 거울면의 빗면과 수직면사이의 비를 시간에 대한 함수로 나타낸 그래프,4 is a graph showing the ratio between the oblique and vertical planes of the mirror surface as a function of time, according to the method of the present invention,

제5도는 본 발명의 방법에 의한 레이저 다이오드용 거울면 제작 공정도.5 is a mirror surface manufacturing process diagram for a laser diode according to the method of the present invention.

Claims (3)

레이저 다이오드용 이중이종 접합구조의 (100)GaAs/AlGaAs 또는 InP/InGaAsP의 웨이퍼에 포토레지스터로 (011) 방향의 스트라이프 패턴을 형성하어 초기식각을 행하고, 이후 상기 포토레지스터를 제거한 후 다시 식각을 행하여 식각벽면의 각을 수직으로 하는 과정으로 이루어짐을 특징으로 하는 2단계 화학식각법에 의한 레이저 다이오드용 거울면 제작방법.Initial etching is performed by forming a stripe pattern in a (011) direction with a photoresist on a wafer of (100) GaAs / AlGaAs or InP / InGaAsP of a double heterojunction structure for a laser diode, and then etching again after removing the photoresist. Method for manufacturing a mirror surface for a laser diode by a two-step chemical etching method, characterized in that the angle of the etch wall surface is made vertically. 제l항에 있어서, 식각을 행하는 식각액이 표면반응 제한형(Surface Reaction Limited) 이고, 상기 웨이퍼 각층에서의 식각율이 동일함을 특징으로 하는 2단계 화학식각법에 의한 레이저 다이오드용 거울면 제작방법.The method of claim 1, wherein the etching solution is a surface reaction limited (Surface Reaction Limited), the etching rate in each layer of the wafer is the same, the method for producing a mirror surface for a laser diode by a two-step chemical etching method. 제1항에 있어서, 상기 웨이퍼의 최상층인 오오믹 접속층의 식각전 두께(di)및 식각후 두께(df), 초기 식각의 깊이(Xo)사이의 관계가 (di-df)>0.35Xo를 만족함을 특징으로 하는 2단계 화학식각법에 의한 레이저 다이오드용 거울면 제작방법.The method of claim 1, wherein the relationship between the pre-etch thickness (di), the post-etch thickness (df) and the initial depth (Xo) of the ohmic connection layer, which is the uppermost layer of the wafer, is (di-df)> 0.35Xo. Method for producing a mirror surface for a laser diode by a two-step chemical angle method characterized in that it satisfies. ※참고사항:최초출원 내용에 의하여 공개하는 것임.※ Note: This is to be disclosed based on the first application.
KR1019890003619A 1989-03-22 1989-03-22 Laser diode mirror phase manufacture method using 2 step chemical method KR910008440B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890003619A KR910008440B1 (en) 1989-03-22 1989-03-22 Laser diode mirror phase manufacture method using 2 step chemical method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890003619A KR910008440B1 (en) 1989-03-22 1989-03-22 Laser diode mirror phase manufacture method using 2 step chemical method

Publications (2)

Publication Number Publication Date
KR900015397A true KR900015397A (en) 1990-10-26
KR910008440B1 KR910008440B1 (en) 1991-10-15

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Application Number Title Priority Date Filing Date
KR1019890003619A KR910008440B1 (en) 1989-03-22 1989-03-22 Laser diode mirror phase manufacture method using 2 step chemical method

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KR910008440B1 (en) 1991-10-15

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