KR900012361A - Floating gate memory cells and devices and methods for manufacturing the same - Google Patents
Floating gate memory cells and devices and methods for manufacturing the sameInfo
- Publication number
- KR900012361A KR900012361A KR1019890000955A KR890000955A KR900012361A KR 900012361 A KR900012361 A KR 900012361A KR 1019890000955 A KR1019890000955 A KR 1019890000955A KR 890000955 A KR890000955 A KR 890000955A KR 900012361 A KR900012361 A KR 900012361A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- methods
- devices
- same
- memory cells
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14974488A | 1988-01-29 | 1988-01-29 | |
US149744 | 1988-01-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900012361A true KR900012361A (en) | 1990-08-03 |
KR0128063B1 KR0128063B1 (en) | 1998-04-02 |
Family
ID=22531614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890000955A KR0128063B1 (en) | 1988-01-29 | 1989-01-28 | Floating gate memory cell and device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH025487A (en) |
KR (1) | KR0128063B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100804179B1 (en) * | 2005-01-28 | 2008-02-18 | 인피니언 테크놀로지스 아게 | Integrated semiconductor memory with an arrangement of nonvolatile memory cells, and method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007517386A (en) * | 2003-12-19 | 2007-06-28 | インフィネオン テクノロジーズ アクチエンゲゼルシャフト | BRIDGE FIELD EFFECT TRANSISTOR MEMORY CELL, DEVICE HAVING THE CELL, AND METHOD FOR MANUFACTURING BRIDGE FIELD EFFECT TRANSISTOR MEMORY CELL |
-
1989
- 1989-01-28 KR KR1019890000955A patent/KR0128063B1/en not_active IP Right Cessation
- 1989-01-30 JP JP1020656A patent/JPH025487A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100804179B1 (en) * | 2005-01-28 | 2008-02-18 | 인피니언 테크놀로지스 아게 | Integrated semiconductor memory with an arrangement of nonvolatile memory cells, and method |
Also Published As
Publication number | Publication date |
---|---|
KR0128063B1 (en) | 1998-04-02 |
JPH025487A (en) | 1990-01-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20011012 Year of fee payment: 5 |
|
LAPS | Lapse due to unpaid annual fee |