KR900008681A - Thin film transistor with multiple semiconductor layers - Google Patents
Thin film transistor with multiple semiconductor layersInfo
- Publication number
- KR900008681A KR900008681A KR1019880014858A KR880014858A KR900008681A KR 900008681 A KR900008681 A KR 900008681A KR 1019880014858 A KR1019880014858 A KR 1019880014858A KR 880014858 A KR880014858 A KR 880014858A KR 900008681 A KR900008681 A KR 900008681A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- film transistor
- semiconductor layers
- multiple semiconductor
- layers
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880014858A KR920004778B1 (en) | 1988-11-11 | 1988-11-11 | Thin-film transistor with multi-layer semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880014858A KR920004778B1 (en) | 1988-11-11 | 1988-11-11 | Thin-film transistor with multi-layer semiconductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR900008681A true KR900008681A (en) | 1990-06-03 |
| KR920004778B1 KR920004778B1 (en) | 1992-06-15 |
Family
ID=19279192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019880014858A KR920004778B1 (en) | 1988-11-11 | 1988-11-11 | Thin-film transistor with multi-layer semiconductors |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR920004778B1 (en) |
-
1988
- 1988-11-11 KR KR1019880014858A patent/KR920004778B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR920004778B1 (en) | 1992-06-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E601 | Decision to refuse application | ||
| E902 | Notification of reason for refusal | ||
| J2X1 | Appeal (before the patent court) |
Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL |
|
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20000515 Year of fee payment: 9 |
|
| LAPS | Lapse due to unpaid annual fee |