KR900006922B1 - Discrite element device method of laser diode - Google Patents

Discrite element device method of laser diode Download PDF

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Publication number
KR900006922B1
KR900006922B1 KR1019880002635A KR880002635A KR900006922B1 KR 900006922 B1 KR900006922 B1 KR 900006922B1 KR 1019880002635 A KR1019880002635 A KR 1019880002635A KR 880002635 A KR880002635 A KR 880002635A KR 900006922 B1 KR900006922 B1 KR 900006922B1
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South Korea
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laser diode
mirror surface
forming
substrate
epitaxial layer
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KR1019880002635A
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Korean (ko)
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KR890015470A (en
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박영소
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삼성전자 주식회사
강진구
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The forming method comprises forming an epitaxial layer (12) having a VSIS structure on a semiconductor substrate (11) by the LPE method; etching the surface corresponding to the mirror surface of each individual element by the RIBE method with using the oxide film or phota resist as a mask: depositing a protecting film (13) of PSG, SiO2 or Si3N4 on the substrate (11) and the mirror surface by the PECVD method; forming a electrode (14) and a common electorde (15); and scribing the laser semiconductor along the etched portion to cut it in individual elements.

Description

레이저 다이오드의 개별소자 형성방법Individual element formation method of laser diode

제1도는 종래 레이저 다이오드의 사시도.1 is a perspective view of a conventional laser diode.

제2도는 본 발명 레이저 다이오드의 사시도.2 is a perspective view of the laser diode of the present invention.

제3도의 (a)∼(d)는 본 발명 레이저 다이오드의 제조공정도.3A to 3D are manufacturing process diagrams of the laser diode of the present invention.

* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings

11 : 기판 12 : 에피택셜층11 substrate 12 epitaxial layer

13 : 보호막 14 : 전극13: protective film 14: electrode

15 : 공통전극15: common electrode

본 발명은 컴팩트 디스크 플레이어, 비데오 디스크 플레이어, 레이저 빔 프린터, 광통신의 광원등에 사용되는 레이저 다이오드의 개별소자 형성방법에 관한 것이다.The present invention relates to a method for forming an individual element of a laser diode used in a compact disc player, a video disc player, a laser beam printer, a light source of optical communication, and the like.

일반적인 종래의 레이저 다이오드는, 제1도에 도시한 바와같이 반도체 기판(1)상에 에피택셜층(2)을 형성하고 전극(3)(4)을 형성한후 칼날에 의하여 벽계면(5)을 따라 기판(1)이 쪼개지게 함으로써 레이징을 위한 발광부(6)의 거울면 형성을 이루었으나, 이와같은 개별소자 절단방법에 의해 형성된 레이저 다이오드는 칼날 절에 의해 수율이 낮을뿐만 아니라 거울면의 보호막 도포를 별개의 공정에 의하여 행해야 함으로 공정상 번거로움이 발생되었다.In general, conventional laser diodes, as shown in FIG. 1, form an epitaxial layer 2 on a semiconductor substrate 1, form electrodes 3, 4, and then form a wall interface 5 by a blade. According to this, the substrate 1 is split to form a mirror surface of the light emitting unit 6 for lasing. However, the laser diode formed by the individual element cutting method has a low yield as well as a mirror surface due to the blade cutting. Since the coating of the protective film should be carried out by a separate process, troublesome processing occurred.

본 발명은 이와같은 점을 감안하여 반도체 기판상에 에피택셜층을 형성한후 건식 식각법에 의하여 거울면을 형성하고 보호막을 도포하여, 거울면에 보호막이 기판상부와 동시에 도포될 수 있게 함으로써 거울면의 보호막 도포를 위한 별도의 공정을 필요치 않게하여 공정의 단순화를 꾀하고자 안출한 것으로 이을 첨부된 도면에 의하여 상세히 설명하면 다음과 같다.In view of the above, the present invention forms an epitaxial layer on a semiconductor substrate and then forms a mirror surface by a dry etching method and applies a protective film to the mirror surface so that the protective film can be simultaneously applied to the upper surface of the mirror. In order to simplify the process by not requiring a separate process for applying the protective film of the surface described in detail by the accompanying drawings as follows.

첨부된 도면 제2도는 본 발명 레이저 다이오드의 제조공정중 건식 식각에 의하여 기판상에 거울면이 형성된 레이저 다이오드의 사시도로써 반도체 기판(11)상에 에피택셜층(12)을 형성하고 각 개별소자의 거울면에 해당하는 면을 건식 식각법에 의하여 에칭한 상태를 나타낸 것이다. 이를 제3도의 (a)∼(d)에 도시된 바와같은 제조공정도에 의하여 더욱 상세히 설명하면 다음과 같다.2 is a perspective view of a laser diode in which a mirror surface is formed on the substrate by dry etching during the manufacturing process of the laser diode of the present invention, forming the epitaxial layer 12 on the semiconductor substrate 11, and It shows a state that the surface corresponding to the mirror surface is etched by the dry etching method. This will be described in more detail by the manufacturing process diagram as shown in (a) to (d) of FIG. 3 as follows.

제3도의 (a)와 같이 기판(11)상에 LPE법에 의하여 VSIS 구조의 에피택셜층(12)을 성장하고, 제3도의 (b)와 같이 각 개별소자의 거울면에 해당되는 면을 산화막 또는 포토레지스트를 마스크로 하여 RIBE법에 의해 에칭하며, 제3도의 (c)와 같이 기판(11) 및 기울면에 PSG 또는 SiO2또는 Si3N4등의 보호막(13)을 법에 의하여 증착하고, 제3도의 (d)와 같이 전극(14) 및 공통전극(15)을 형성한다. 이와같은 방법에 의하여 형성된 레이저 다이오드는 이미 형성된 거울면 및 기판상에 보호막(13)을 도포할 수 있어 별도의 보호막 도포공정이 필요없으며 각각의 개별소자로 절단시 에칭된 부분을 따라 스크라이빙을 하여도 거울면의 손상없이 절단할 수 있으므로 특별히 수작업을 통한 절단이 불필요해져 수율의 향상을 기대할 수 있는 것이다.As shown in (a) of FIG. 3, the epitaxial layer 12 of the VSIS structure is grown on the substrate 11 by the LPE method, and as shown in (b) of FIG. The oxide film or photoresist is used as a mask to be etched by RIBE method, and the protective film 13 such as PSG or SiO 2 or Si 3 N 4 is deposited on the substrate 11 and the inclined surface as shown in FIG. Then, the electrode 14 and the common electrode 15 are formed as shown in FIG. The laser diode formed by this method can apply the protective film 13 on the mirror surface and the substrate already formed so that a separate protective film application process is not required. Even if it can be cut without damaging the mirror surface, it is not necessary to cut through a special manual work can be expected to improve the yield.

Claims (1)

반도체 기판(11)상에 LPE 법에 의한 VSIS 구조의 에피택셜층(12)을 형성하고 각 개별소자의 거울면에 해당되는 면을 산화막 또는 포토레지스트를 마스크로 하여 RIBE 법에 의해 에칭하며, 기판(11) 및 거울면에 PSG 또는 SiO2또는 Si3N4등의 보호막(13)을 PECVD 법에 의하여 증착하고, 전극(14) 및 공통전극(15)을 형성한후 에칭된 부분을 따라 스크라이빙을 하여 절단함을 특징으로 한 레이저 다이오드의 개별소자 형성방법.The epitaxial layer 12 of the VSIS structure by the LPE method is formed on the semiconductor substrate 11, and the surface corresponding to the mirror surface of each individual element is etched by the RIBE method using an oxide film or a photoresist as a mask. (11) and a protective film 13 such as PSG or SiO 2 or Si 3 N 4 on the mirror surface by PECVD, and after forming the electrode 14 and the common electrode 15, A method of forming an individual element of a laser diode, characterized by cutting by criving.
KR1019880002635A 1988-03-12 1988-03-12 Discrite element device method of laser diode KR900006922B1 (en)

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KR1019880002635A KR900006922B1 (en) 1988-03-12 1988-03-12 Discrite element device method of laser diode

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KR890015470A KR890015470A (en) 1989-10-30
KR900006922B1 true KR900006922B1 (en) 1990-09-24

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KR100437181B1 (en) * 2002-04-29 2004-06-23 엘지전자 주식회사 Method for manufacturing semiconductor laser diode

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