KR890017767A - Silicon carbide reaction tube - Google Patents

Silicon carbide reaction tube Download PDF

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Publication number
KR890017767A
KR890017767A KR1019890006050A KR890006050A KR890017767A KR 890017767 A KR890017767 A KR 890017767A KR 1019890006050 A KR1019890006050 A KR 1019890006050A KR 890006050 A KR890006050 A KR 890006050A KR 890017767 A KR890017767 A KR 890017767A
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KR
South Korea
Prior art keywords
silicon carbide
reaction tube
reaction
high purity
base
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Application number
KR1019890006050A
Other languages
Korean (ko)
Inventor
후꾸지 마쓰모도
요시오 다와라
미찌오 하야시
Original Assignee
고사까 유우다로오
신에쓰 가가꾸 고오교오 가부시끼가이샤
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Application filed by 고사까 유우다로오, 신에쓰 가가꾸 고오교오 가부시끼가이샤 filed Critical 고사까 유우다로오
Publication of KR890017767A publication Critical patent/KR890017767A/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
    • B29C48/03—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor characterised by the shape of the extruded material at extrusion
    • B29C48/09—Articles with cross-sections having partially or fully enclosed cavities, e.g. pipes or channels
    • B29C48/10—Articles with cross-sections having partially or fully enclosed cavities, e.g. pipes or channels flexible, e.g. blown foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1027—IV
    • H01L2924/10272—Silicon Carbide [SiC]

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음No content

Description

탄화규소질 반응관Silicon carbide reaction tube

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1도는 본 발명에 따르는 반응관의 한 구체예를 나타내는 단면도이고, 제 2 도는 본 발명에 따르는 반응관의 또 다른 구체예를 보여주는 단면도이다.1 is a cross-sectional view showing one embodiment of the reaction tube according to the present invention, and FIG. 2 is a cross-sectional view showing another embodiment of the reaction tube according to the present invention.

Claims (17)

탄화규소질 반응관으로서, 철농도가 20ppm 이하이며 밀도가 3.0g/cm3이상인 반응-소결된 탄화규소로 만들어진 반응관 베이스와, 관 베이스의 내면위에 용착된 철 농도 5ppm 이하의 고순도 탄화규소 필름으로 이루어지는 탄화규소 층으로 이루어지는 방응관.A silicon carbide reaction tube comprising a reaction tube base made of reaction-sintered silicon carbide having an iron concentration of 20 ppm or less and a density of 3.0 g / cm 3 or more, and a high purity silicon carbide film having an iron concentration of 5 ppm or less deposited on the inner surface of the tube base. A reaction tube made of a silicon carbide layer. 제 1 항에 있어서, 고순도 탄화규소 필름의 철 농도가 1ppm이하인 것을 특징으로 하는 반응관.The reaction tube according to claim 1, wherein the iron concentration of the high purity silicon carbide film is 1 ppm or less. 제 1 항에 있어서, 고순도 탄화규소 필름이 화확적 증기용착 방법에 의하여 형성되는 것을 특징으로 하는 반응관.The reaction tube according to claim 1, wherein the high purity silicon carbide film is formed by a chemical vapor deposition method. 제 1 항에 있어서, 고순도 탄화규소 필름의 두께가 50 내지 2000㎛인 것을 특징으로 하는 반응관.The reaction tube according to claim 1, wherein the high purity silicon carbide film has a thickness of 50 to 2000 mu m. 제 1 항에 있어서, 고순도 탄화규소 필름의 두께가 200 내지 2000㎛인 것을 특징으로 하는 반응관.The reaction tube according to claim 1, wherein the high purity silicon carbide film has a thickness of 200 to 2000 mu m. 제 1 항에 있어서, 고순도 탄화규소 필름의 두께가 500 내지 2000㎛인 것을 특징으로 하는 반응관.The reaction tube according to claim 1, wherein the high purity silicon carbide film has a thickness of 500 to 2000 mu m. 제 1 항에 있어서, 관 베이스의 철 농도가 10ppm이하인 것을 특징으로 하는 반응관.The reaction tube according to claim 1, wherein the iron concentration of the tube base is 10 ppm or less. 제 1 항에 있어서, 관 베이스의 철 농도가 5ppm이하인 것을 특징으로 하는 반응관.The reaction tube according to claim 1, wherein the iron concentration of the tube base is 5 ppm or less. 제 1 항에 있어서, 관 베이스의 밀도가 3.03 내지 3.10g/cm3인 것을 특징으로 하는 반응관.The reaction tube according to claim 1, wherein the tube base has a density of 3.03 to 3.10 g / cm 3 . 탄화규소질 반응관으로서, 반응-소결된 탄화규소로 만들어진 반응관 베이스와, 반응-소결된 탄화 규소 관 베이스의 내부 벽에 형성된 Si-결핍층 및 Si-결핍 층위에 용착되고 두께가 0.05mm 이상인 고순도 탄화규소 필름으로 이루어지는 탄화규소층으로 이루어지는 반응관.A silicon carbide reaction tube, deposited on a reaction tube base made of reaction-sintered silicon carbide and an Si-deficiency layer and Si-deficiency layer formed on the inner wall of the reaction-sintered silicon carbide tube base and having a thickness of 0.05 mm or more. A reaction tube made of a silicon carbide layer made of a high purity silicon carbide film. 제 10 항에 있어서, Si-결핍층의 두께가 0.4 내지 0.7mm범위내인 것을 특징으로 하는 반응관.The reaction tube according to claim 10, wherein the thickness of the Si-deficient layer is in the range of 0.4 to 0.7 mm. 제 10 항에 있어서, 관 베이스의 철 농도가 20 ppm이하이고 밀도가 3.0g/cm3이상인 것을 특징으로 하느 반응관.The reaction tube according to claim 10, wherein the iron base of the tube base is 20 ppm or less and the density is 3.0 g / cm 3 or more. 제 10 항에 있어서, 탄화규소필름의 철 농도가 5 ppm이하인 것을 특징으로 하는 반응관.The reaction tube according to claim 10, wherein the iron carbide film has a iron concentration of 5 ppm or less. 제 10 항에 있어서, 탄화규소필름의 두께가 500 ㎛이상인 것을 특징으로 하는 반응관.The reaction tube according to claim 10, wherein the silicon carbide film has a thickness of 500 µm or more. 탄화규소질 반응관의 제조방법으로서, 반응-소결된 탄화규소로 반응관 베이스를 형성하는 단계, 관 베이스의 내부벽에 Si제거 처리를 하여 Si-결핍층을 거기에 형성하는 단계, 그리고 화학적 증기 용착에 의해 고순도의 탄화규소 필름을 형성하는 단계로 이루어지는 방법.A method for producing a silicon carbide reaction tube, comprising: forming a reaction tube base with reaction-sintered silicon carbide, performing a Si removal treatment on an inner wall of the tube base, and forming a Si-deficient layer therein, and chemical vapor deposition Forming a high purity silicon carbide film. 제 15 항에 있어서, Si제거 처리가 플루오르화 수소산 및 질산 함유 산 용액에 관 베이스를 침지함으로써 실행되는 것을 특징으로 하는 방법.The method according to claim 15, wherein the Si removal treatment is performed by immersing the tube base in a solution of hydrofluoric acid and nitric acid. 제 15 항에 있어서, 고온에서 염산 가스를 관 베이스를 통하여 통과시킴으로써 Si제거 처리가 실행되는 것을 특징으로 하는 방법.The method according to claim 15, wherein the Si removal treatment is performed by passing hydrochloric acid gas through the tube base at a high temperature. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890006050A 1988-05-06 1989-05-06 Silicon carbide reaction tube KR890017767A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63-109211 1988-05-06
JP63109211A JPH01282152A (en) 1988-05-06 1988-05-06 Silicon carbide-based reaction tube

Publications (1)

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KR890017767A true KR890017767A (en) 1989-12-18

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DE69131247T2 (en) * 1990-11-20 1999-09-23 Asahi Glass Co Ltd Heat treatment apparatus for semiconductors and high-purity silicon carbide parts for the apparatus and process for their manufacture
JPH05279123A (en) * 1992-02-04 1993-10-26 Shin Etsu Chem Co Ltd Siliceous carbide member for producing semiconductor
DE69825266T2 (en) * 1998-02-18 2005-08-11 Nippon Pillar Packing Co., Ltd. ROTARY CLUTCH
JP4925152B2 (en) * 2000-01-21 2012-04-25 イビデン株式会社 Semiconductor manufacturing equipment parts and semiconductor manufacturing equipment

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JPS6335452A (en) * 1986-07-31 1988-02-16 東芝セラミツクス株式会社 Manufacture of structural member for semiconductor diffusion furnace

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