KR890014235U - 디램 리프레쉬 회로 - Google Patents

디램 리프레쉬 회로

Info

Publication number
KR890014235U
KR890014235U KR2019870021614U KR870021614U KR890014235U KR 890014235 U KR890014235 U KR 890014235U KR 2019870021614 U KR2019870021614 U KR 2019870021614U KR 870021614 U KR870021614 U KR 870021614U KR 890014235 U KR890014235 U KR 890014235U
Authority
KR
South Korea
Prior art keywords
refresh circuit
dram refresh
dram
circuit
refresh
Prior art date
Application number
KR2019870021614U
Other languages
English (en)
Other versions
KR900004014Y1 (ko
Inventor
정종수
Original Assignee
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 금성사 filed Critical 주식회사 금성사
Priority to KR2019870021614U priority Critical patent/KR900004014Y1/ko
Publication of KR890014235U publication Critical patent/KR890014235U/ko
Application granted granted Critical
Publication of KR900004014Y1 publication Critical patent/KR900004014Y1/ko

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR2019870021614U 1987-12-08 1987-12-08 디램 리프레쉬 회로 KR900004014Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019870021614U KR900004014Y1 (ko) 1987-12-08 1987-12-08 디램 리프레쉬 회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019870021614U KR900004014Y1 (ko) 1987-12-08 1987-12-08 디램 리프레쉬 회로

Publications (2)

Publication Number Publication Date
KR890014235U true KR890014235U (ko) 1989-08-10
KR900004014Y1 KR900004014Y1 (ko) 1990-05-07

Family

ID=19270181

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019870021614U KR900004014Y1 (ko) 1987-12-08 1987-12-08 디램 리프레쉬 회로

Country Status (1)

Country Link
KR (1) KR900004014Y1 (ko)

Also Published As

Publication number Publication date
KR900004014Y1 (ko) 1990-05-07

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Legal Events

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A201 Request for examination
E701 Decision to grant or registration of patent right
REGI Registration of establishment
FPAY Annual fee payment

Payment date: 19941228

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee