KR890005841A - Method of forming electrode pattern by lift off - Google Patents

Method of forming electrode pattern by lift off Download PDF

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Publication number
KR890005841A
KR890005841A KR870010941A KR870010941A KR890005841A KR 890005841 A KR890005841 A KR 890005841A KR 870010941 A KR870010941 A KR 870010941A KR 870010941 A KR870010941 A KR 870010941A KR 890005841 A KR890005841 A KR 890005841A
Authority
KR
South Korea
Prior art keywords
electrode pattern
lift
applying
forming electrode
photoresist film
Prior art date
Application number
KR870010941A
Other languages
Korean (ko)
Other versions
KR900001058B1 (en
Inventor
김준영
김기준
김번중
Original Assignee
강진구
삼성반도체통신 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 강진구, 삼성반도체통신 주식회사 filed Critical 강진구
Priority to KR1019870010941A priority Critical patent/KR900001058B1/en
Publication of KR890005841A publication Critical patent/KR890005841A/en
Application granted granted Critical
Publication of KR900001058B1 publication Critical patent/KR900001058B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Weting (AREA)

Abstract

내용 없음No content

Description

리프트오프에 의한 전극 패턴 형성방법Method of forming electrode pattern by lift off

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제4a도 4e도는 본 발명에 의한 자외선 굽치기를 이용한 2층 감광막의 리프트오프 공정도.4A and 4E are lift-off process diagrams of a two-layer photosensitive film using ultraviolet bending according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 기판 3 : 전극용 금속1 substrate 3 metal for electrode

4 : 금속 및 절연막 21, 21 : 감광막4 metal and insulating film 21, 21 photosensitive film

Claims (1)

기판(1)상에 감광막(21)을 도포하여 자외선 노광 및 굽치기를 동시에 실시하고, 감광막(22)을 상기 감광막(21)상에 도포하여 굽치기를 한후 포토마스크를 사용하여 노광시키고 현상하며, 전극용 금속(3)을 도포하여 금속의 불연속성에 의해 감광막 제거 용액에서 양호한 리프트오프를 가져오게 함으로써 전극 패턴을 형성함을 특징으로한 리프트오프에 의한 전극 패턴 형성방법.Applying a photoresist film 21 on the substrate 1 to perform ultraviolet exposure and bending at the same time, applying the photoresist film 22 on the photoresist film 21 and bending it, exposing and developing using a photomask. And forming an electrode pattern by applying an electrode metal (3) to bring good lift-off from the photoresist removal solution due to discontinuity of the metal. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870010941A 1987-09-30 1987-09-30 Formation method of electrode patern by lift-off KR900001058B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019870010941A KR900001058B1 (en) 1987-09-30 1987-09-30 Formation method of electrode patern by lift-off

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870010941A KR900001058B1 (en) 1987-09-30 1987-09-30 Formation method of electrode patern by lift-off

Publications (2)

Publication Number Publication Date
KR890005841A true KR890005841A (en) 1989-05-17
KR900001058B1 KR900001058B1 (en) 1990-02-26

Family

ID=19264903

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870010941A KR900001058B1 (en) 1987-09-30 1987-09-30 Formation method of electrode patern by lift-off

Country Status (1)

Country Link
KR (1) KR900001058B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101030527B1 (en) * 2004-05-14 2011-04-26 엘지디스플레이 주식회사 Liquid Crystal Display Device Using Lift-Off Technique And Method For Fabricating The Same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101030527B1 (en) * 2004-05-14 2011-04-26 엘지디스플레이 주식회사 Liquid Crystal Display Device Using Lift-Off Technique And Method For Fabricating The Same

Also Published As

Publication number Publication date
KR900001058B1 (en) 1990-02-26

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