KR890002993A - Manufacturing Method of Semiconductor Device - Google Patents
Manufacturing Method of Semiconductor Device Download PDFInfo
- Publication number
- KR890002993A KR890002993A KR1019870008421A KR870008421A KR890002993A KR 890002993 A KR890002993 A KR 890002993A KR 1019870008421 A KR1019870008421 A KR 1019870008421A KR 870008421 A KR870008421 A KR 870008421A KR 890002993 A KR890002993 A KR 890002993A
- Authority
- KR
- South Korea
- Prior art keywords
- ion implantation
- manufacturing
- oxide film
- semiconductor substrate
- semiconductor device
- Prior art date
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제 1 도는 종래 2회 사진공정을 이용한 트윈 웰 제조공정도. 제 2 도는 종래 사진공정과 산화공정을 이용한 트윈 웰 제조공정도. 제 3 도는 본 발명에 따른 트윈 웰 제조공정도.1 is a twin well manufacturing process using a conventional two-time photographic process. 2 is a twin well manufacturing process using a conventional photographic process and an oxidation process. 3 is a twin well manufacturing process according to the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019870008421A KR890002993A (en) | 1987-07-31 | 1987-07-31 | Manufacturing Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019870008421A KR890002993A (en) | 1987-07-31 | 1987-07-31 | Manufacturing Method of Semiconductor Device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR890002993A true KR890002993A (en) | 1989-04-12 |
Family
ID=68279851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870008421A KR890002993A (en) | 1987-07-31 | 1987-07-31 | Manufacturing Method of Semiconductor Device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR890002993A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100398587B1 (en) * | 1997-12-08 | 2003-11-14 | 주식회사 하이닉스반도체 | Method for manufacturing twin-well of semiconductor device |
-
1987
- 1987-07-31 KR KR1019870008421A patent/KR890002993A/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100398587B1 (en) * | 1997-12-08 | 2003-11-14 | 주식회사 하이닉스반도체 | Method for manufacturing twin-well of semiconductor device |
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