KR890002993A - Manufacturing Method of Semiconductor Device - Google Patents

Manufacturing Method of Semiconductor Device Download PDF

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Publication number
KR890002993A
KR890002993A KR1019870008421A KR870008421A KR890002993A KR 890002993 A KR890002993 A KR 890002993A KR 1019870008421 A KR1019870008421 A KR 1019870008421A KR 870008421 A KR870008421 A KR 870008421A KR 890002993 A KR890002993 A KR 890002993A
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KR
South Korea
Prior art keywords
ion implantation
manufacturing
oxide film
semiconductor substrate
semiconductor device
Prior art date
Application number
KR1019870008421A
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Korean (ko)
Inventor
오경석
Original Assignee
강진구
삼성반도체통신 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 강진구, 삼성반도체통신 주식회사 filed Critical 강진구
Priority to KR1019870008421A priority Critical patent/KR890002993A/en
Publication of KR890002993A publication Critical patent/KR890002993A/en

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음No content

Description

반도체장치의 제조방법Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 종래 2회 사진공정을 이용한 트윈 웰 제조공정도. 제 2 도는 종래 사진공정과 산화공정을 이용한 트윈 웰 제조공정도. 제 3 도는 본 발명에 따른 트윈 웰 제조공정도.1 is a twin well manufacturing process using a conventional two-time photographic process. 2 is a twin well manufacturing process using a conventional photographic process and an oxidation process. 3 is a twin well manufacturing process according to the present invention.

Claims (1)

반도체장치의 제조방법에 있어서, 제 1 또는 제 2 도 전형의 반도체기판(20)상에 제 1 산화막층(21)을 성장시키고 반도체기판 전면에 제 1 도 전형의 제 1 이온주입을 하는 제 1 공정과, 상기 제 1 산화막(21)상부에 제 2 도 전형 웰 형성을 위한 이온주입용 마스크(23)를 형성하고 상기 제 1 이온주입보다 고농도의 제 2 도 전형의 제 2 이온주입을 하는 제 2 공정과, 상기 제 2 도 전형의 이온주입을 한 제 2 도 전형 웰 형성영역 상부의 제 1 산화막(21)을 에칭한 후 상기 이온주입용 마스크 (23)를 제거하는 제 3 공정과, 반도체기판 전면에 소정 두께의 제 2 산화막 (25a)(25b)을 성장시키는 제 4 공정을 구비하여 상기 공정들의 연속으로 반도체기판상에 트윈 웰(26)(27)을 형성함을 특징으로 하는 반도체장치의 제조방법.In the method of manufacturing a semiconductor device, a first oxide layer 21 is grown on a first or second conductive semiconductor substrate 20 and a first ion implantation of a first conductive type is applied to the entire surface of the semiconductor substrate. And forming an ion implantation mask 23 for forming a second conductivity type well on the first oxide film 21 and performing a second ion implantation with a higher concentration of the second conductivity type than the first ion implantation. And a third step of removing the ion implantation mask 23 after etching the first oxide film 21 in the upper portion of the second degree well type forming region where the second degree of ion implantation is performed. And a fourth step of growing a second oxide film (25a) (25b) having a predetermined thickness on the entire surface of the substrate to form twin wells (26) (27) on the semiconductor substrate in succession of the above processes. Manufacturing method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870008421A 1987-07-31 1987-07-31 Manufacturing Method of Semiconductor Device KR890002993A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019870008421A KR890002993A (en) 1987-07-31 1987-07-31 Manufacturing Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870008421A KR890002993A (en) 1987-07-31 1987-07-31 Manufacturing Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR890002993A true KR890002993A (en) 1989-04-12

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870008421A KR890002993A (en) 1987-07-31 1987-07-31 Manufacturing Method of Semiconductor Device

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KR (1) KR890002993A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100398587B1 (en) * 1997-12-08 2003-11-14 주식회사 하이닉스반도체 Method for manufacturing twin-well of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100398587B1 (en) * 1997-12-08 2003-11-14 주식회사 하이닉스반도체 Method for manufacturing twin-well of semiconductor device

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