KR890001204A - Solid state image elements - Google Patents

Solid state image elements Download PDF

Info

Publication number
KR890001204A
KR890001204A KR1019870006473A KR870006473A KR890001204A KR 890001204 A KR890001204 A KR 890001204A KR 1019870006473 A KR1019870006473 A KR 1019870006473A KR 870006473 A KR870006473 A KR 870006473A KR 890001204 A KR890001204 A KR 890001204A
Authority
KR
South Korea
Prior art keywords
state image
solid state
image elements
type layer
type
Prior art date
Application number
KR1019870006473A
Other languages
Korean (ko)
Inventor
윤주영
Original Assignee
강진구
삼성반도체통신 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 강진구, 삼성반도체통신 주식회사 filed Critical 강진구
Priority to KR1019870006473A priority Critical patent/KR890001204A/en
Publication of KR890001204A publication Critical patent/KR890001204A/en

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

내용 없음No content

Description

고체 영상 소자Solid state image elements

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 단면도.1 is a cross-sectional view of the present invention.

제2도는 본 발명의 실시예에 따른 인터라인 전송 어레이를 나타낸 도면.2 illustrates an interline transmission array according to an embodiment of the present invention.

제3도는 본 발명의 전위분포를 나타낸 그래프.3 is a graph showing the potential distribution of the present invention.

Claims (1)

n형기판(8)위에 형성된 P형층(7)보다 불순물 농도가 높은 P+형층(6)으로 전송영역(2)이 둘러싸여진 고체영상소자에 있어서, 상기한 P형층(7)위에 포토다이오드(1)와 상기한 전송영역(2)을 전체적으로 둘러싸도록 상기한 P+형층(6)이 형성되어지는 것을 특징으로 하는 고체영상소자.In a solid-state image device in which a transfer region 2 is surrounded by a P + type layer 6 having a higher impurity concentration than a P type layer 7 formed on an n-type substrate 8, the photodiode (P) is formed on the P-type layer 7. 1) and the P + type layer (6) formed so as to surround the transfer area (2) as a whole. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870006473A 1987-06-25 1987-06-25 Solid state image elements KR890001204A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019870006473A KR890001204A (en) 1987-06-25 1987-06-25 Solid state image elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870006473A KR890001204A (en) 1987-06-25 1987-06-25 Solid state image elements

Publications (1)

Publication Number Publication Date
KR890001204A true KR890001204A (en) 1989-03-18

Family

ID=68279716

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870006473A KR890001204A (en) 1987-06-25 1987-06-25 Solid state image elements

Country Status (1)

Country Link
KR (1) KR890001204A (en)

Similar Documents

Publication Publication Date Title
KR830006824A (en) Solid state imaging device
TW373399B (en) Active pixel image sensor with shared amplifier read-out
KR950021737A (en) CDD solid-state imaging device
KR840002383A (en) Color solid-state imaging device
KR920018959A (en) Solid state imaging device
KR870005477A (en) Semiconductor devices
KR940027509A (en) Charge Coupled Solid State Imaging Device with Overflow Drain (OFD) Structure
GB1527069A (en) Photoelectric elements for a solid state image pickup device
KR940006395A (en) Solid state imaging device and manufacturing method thereof
KR970067918A (en) Improved Interline Charge Coupled Solid State Image Sensor
KR900002478A (en) CCD imager
CA2050435A1 (en) Photo-sensing device
KR890016626A (en) Semiconductor device
KR950021705A (en) Solid state imaging device
KR890001204A (en) Solid state image elements
KR940005105A (en) Solid-state imaging device
KR930024467A (en) Amplifying Solid State Imaging Device
KR880010510A (en) Photosensitive device
KR890001206A (en) Photo sensor
KR890005897A (en) Solid state image device with double flat P-well structure
JPS6484733A (en) Semiconductor device
JPS5766666A (en) Solid state image pickup device
JPS5775073A (en) Solid image pickup device
JPS60187053A (en) Ccd type solid-state image pickup element
KR940008108A (en) Semiconductor devices

Legal Events

Date Code Title Description
A201 Request for examination
N231 Notification of change of applicant
E902 Notification of reason for refusal
G160 Decision to publish patent application
O035 Opposition [patent]: request for opposition

Free format text: OPPOSITION NUMBER: 001990002031001990002401; OPPOSITION DATE: 21050818

E701 Decision to grant or registration of patent right
O073 Decision to grant registration after opposition [patent]: decision to grant registration
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20050607

Year of fee payment: 16

LAPS Lapse due to unpaid annual fee