KR890000332B1 - Thin display element - Google Patents

Thin display element Download PDF

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KR890000332B1
KR890000332B1 KR1019850005100A KR850005100A KR890000332B1 KR 890000332 B1 KR890000332 B1 KR 890000332B1 KR 1019850005100 A KR1019850005100 A KR 1019850005100A KR 850005100 A KR850005100 A KR 850005100A KR 890000332 B1 KR890000332 B1 KR 890000332B1
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thin film
display device
film display
layer
silica gel
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KR1019850005100A
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KR870001535A (en
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김원현
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주식회사 금성사
허신구
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The device improving anti-humidity characteristics comprises upper and lower base plates (1,3), a transparent conductive layer (2), an opaque conductive layer (4), insulation layers (5,6), a luminescent layer (7), a water absorbing layer (8), a sealing material (9), and a space (10). The water absorbing layer (8) composed of silica gel absorbs water permeated from the base plates or the sealed space immediately.

Description

박막 표시소자Thin film display elements

제1도는 종래 박막 표시소자의 구성을 보인 종단면도.1 is a longitudinal sectional view showing a configuration of a conventional thin film display element.

제2도는 본 발명 박막 표시소자의 일실시예를 보인 종단면도.2 is a longitudinal sectional view showing an embodiment of the thin film display device of the present invention.

제3도는 본 발명 박막 표시소자의 다른 실시예를 보인 종단면도.Figure 3 is a longitudinal sectional view showing another embodiment of the thin film display device of the present invention.

제4도는 본 발명 박막 표시소자의 또 다른 실시예를 보인 종단면도.Figure 4 is a longitudinal sectional view showing another embodiment of the thin film display device of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1, 3 : 상, 하부기판 2 : 투명도전극1, 3: upper and lower substrates 2: transparent electrodes

4 : 배면전극 5, 6 : 절연막4: back electrode 5, 6: insulating film

7 : 발광층 8 : 흡수층7: light emitting layer 8: absorbing layer

본 발명은 박막 표시소자에 관한 것으로, 특히 박막 표시소자 내부에 흡수층을 형성하여 표시소자의 내습성을 향상시킬 수 있게한 박막 표시소자에 관한 것이다.The present invention relates to a thin film display device, and more particularly, to a thin film display device in which an absorption layer is formed inside the thin film display device to improve the moisture resistance of the display device.

일반적으로 사용되는 박막 표시소자는 호스트(Host) 격자(Zns, ZnSe, CaS, Mgs)와 활성체(Mn, Cu, Ce, Tb,Tm)로 구성되는 형광체내에서 106V/cm의 고전계에 의한 에너지성 전자 충격으로 발광중심인 활성체가 발광되는 현상을 응용하여 화상이나 정보를 표시하는 것인 바, 이와 같은 박막 표시소자의 일예를 들면, 제1도에 도시한 바와같이 투명도가 95%이상인 알루미늄 보로 실리케이트 그라스(Alu minum boro silicate glass) 상부기판(1)위에 투명도전막(iTo)을 전자빔 증착법에 의해 약 1500Å두께로 증착한 후 포토에칭법 (Photoetching)을 이용하여 스트라이프(stripe)상 투명도전극(2)을 형성하여 하부기판(3)위에 진공 증착법으로 약 3000Å두께의 배면전극(4)을 형성하고 상, 하부기판(1)(3)내면에 약 5mTorr하에서 Si3N4, Y2O3등으로 두께1500-2000Å의 절연막(5)(6)을 각기 형성하고 양 절연막(5)(6)간에는 적당한 온도를 가하면서 두께 5000-6000Å의 ZnS를 호스트하여 Mn등을 활성제로 하는 발광층(7)을 형성시킨 것이 있다.Generally used thin film display devices have a high electric field of 10 6 V / cm in a phosphor composed of a host lattice (Zns, ZnSe, CaS, Mgs) and an active material (Mn, Cu, Ce, Tb, Tm). An image or information is displayed by applying a phenomenon in which an active substance that emits light is emitted by an energetic electron impact caused by an electron shock. For example, such a thin film display device has a transparency of 95% as shown in FIG. After the transparent conductive film (iTo) was deposited on the upper substrate 1 of Alminum boro silicate glass by the electron beam evaporation method to about 1500Å thickness, the transparency of the stripe was formed by the photoetching method. The electrode 2 was formed to form a back electrode 4 having a thickness of about 3000 Å on the lower substrate 3 by vacuum deposition, and Si 3 N 4 , Y 2 at about 5 mTorr on the inner surface of the upper and lower substrates 1 and 3. O 3 and so on, each forming an insulating film (5) and (6) with a thickness of 1500-2000Å and the amount Between the smoke screen (5) (6) to the right while the temperature of the host ZnS can be 5000-6000Å thick that form a light emitting layer 7, which include Mn as an activator.

도면에서 9는 시일제를 보인 것이고, 10은 밀폐공간을 보인 것이다.In the figure, 9 is a sealant, 10 is a sealed space.

이와같은 박막 표시소자는 투명전극(2)과 배면전극(4)간에 약 106V/cm의 고전압을 걸어주면 상, 하부기판(1)(3)사이에 고전계가 형성되어 호스트(ZnS)가 이온화되면서 전자에너지를 가지고 튀어나오며 연속적으로 2차전자를 발생시켜 전자가 지닌 에너지를 활성제(Mn)에 인가함으로써 활성제(Mn)가 발광하게 된다.In such a thin film display device, when a high voltage of about 10 6 V / cm is applied between the transparent electrode 2 and the back electrode 4, a high electric field is formed between the upper and lower substrates 1 and 3 so that the host ZnS is formed. When ionized, the electrons come out with energy and continuously generate secondary electrons so that the activator Mn emits light by applying energy of the electrons to the activator Mn.

그러나, 이와같은 종래의 박막 표시소자는 내습보호제로서 피마자유를 그 내부에 삽입하였는데, 이는 그 삽입공정이 어려울 뿐 아니라 일단 수분이 박막 표시소자 내부에 침수하게 되면 그 내부에 계속 존재하게 되어 절연막(5)(6)의 화학적 성질에 의해 유전체가 박리되고 절연막(5)(6)간에 절연파괴가 일어나게 되므로 내부의 전하밀도가 활성층의 3배에 이르게되어 박막 표시소자의 수명에 치명적인 해를 끼치게 된다.However, such a conventional thin film display device inserts castor oil therein as a moisture resistant agent, which not only makes the insertion process difficult, but also keeps the inside of the insulating film once moisture is submerged inside the thin film display device. Due to the chemical properties of 5) and 6, the dielectric is peeled off and insulation breakdown occurs between the insulating films 5 and 6. Therefore, the charge density in the interior reaches three times as much as the active layer, which causes a serious damage to the life of the thin film display device. .

따라서 본 발명의 목적은 상기한 종래의 결함을 해소하여 내습성이 우수하고 사용수명이 긴 박막 표시소자를 제공하고자 함에 있다.Accordingly, an object of the present invention is to provide a thin film display device having excellent moisture resistance and a long service life by eliminating the above-mentioned conventional defects.

이러한 목적을 가지는 본 발명은 박막 표시소자의 내습보호제로서 피마자유를 주입하여 내습성을 유지하는소극적인 내습구조를 배제하고, 박막 표시소자의 밀폐공간 내부에 통상의 실리카 겔(silica gel)을 재료로 사용하여 흡수층을 형성함으로써 달성된다.The present invention having the above object excludes a passive moisture resistant structure that maintains moisture resistance by injecting castor oil as a moisture protection agent of a thin film display device, and uses a conventional silica gel as a material inside a closed space of the thin film display device. By forming an absorbing layer.

이와같이 박막 표시소자의 내부에 실리카 겔 흡수층을 형성하면, 잘 알려지고있는 바와같이 실리카 겔은 수분 흡수성이 우수한 재료이므로 수분의 침투를 방지하거나, 수분이 침투되더라도 그 수분을 흡수하여 제거하는 적극적인 효과를 얻을 수 있게되는 것이다.As described above, when the silica gel absorption layer is formed inside the thin film display device, silica gel is a material having excellent water absorption, and thus, has an active effect of preventing the penetration of moisture or absorbing and removing the moisture even if moisture is infiltrated. You will get it.

상기 실리카 겔 흡수층은 박막 표시소자의 밀폐공간 내부에 여러가지 형태로 형성될 수 있다.The silica gel absorbing layer may be formed in various shapes in the sealed space of the thin film display device.

즉, 상부 절연막과 발광층 사이 또는 하부기판의 내면, 또는 상우기판과 하부기판의 사이에 형성될 수 있으며, 그외에도 상부기판의 내면등에도 형성될 수 있는 것이다.That is, it may be formed between the upper insulating film and the light emitting layer or between the inner surface of the lower substrate, or between the upper and lower substrates, and may also be formed on the inner surface of the upper substrate.

상기와 같은 본 발명을 이하 첨부도면을 참조하여 실시예를 들어 보다 상세히 설명하면 다음과 같다.The present invention as described above will be described in more detail with reference to the accompanying drawings as follows.

제2도는 본 발명의 일실시예를 보인 것으로, 이에 도시한 바와같이,상하부기판(1)(3)위에 투명도전극(2)과 배면전극(4)이 각각 형성되고, 상하부기판(1)(3)의 내면에는 절연막(5)(6)이 형성되며, 상하부 절연막(5)(6)사이에 발광층(7)이 형성된 것에 있어서, 상기 상부 절연막(5)과 발광층(7)사이에 실리카 겔 흡수층(8)을 형성한것이다.2 shows an embodiment of the present invention. As shown in the drawing, a transparency electrode 2 and a back electrode 4 are formed on upper and lower substrates 1 and 3, respectively, and the upper and lower substrates 1 ( Insulating film 5, 6 is formed on the inner surface of 3), and the light emitting layer 7 is formed between the upper and lower insulating films 5, 6, and the silica gel is formed between the upper insulating film 5 and the light emitting layer 7. The absorber layer 8 is formed.

이와같은 일실시예의 박막 표시소자를 제조함에 있어서는 상기 상하부기판(1)(3), 투명전극(2), 배면전극(4) 및 절연막(5)(6)을 공지방법으로 형성한 다음 약 10-2mTorr이하의 고진공 상태에서 상부 절연막(5)에 박막상 실리카 겔 흡수층(8)을 약 2000Å두께로 형성한다.In manufacturing the thin film display device according to this embodiment, the upper and lower substrates 1, 3, transparent electrodes 2, back electrodes 4, and insulating films 5, 6 are formed by a known method, and then about 10 In the high vacuum state of 2 mTorr or less, a thin film silica gel absorption layer 8 is formed on the upper insulating film 5 at a thickness of about 2000 mW.

상기와 같이된 본 발명 박막 표시소자는 상부 절연막(5)과 발광층(7)간에 수분 흡수재료인 실리카 겔로 이루어진 실리카 겔 흡수층(8)이 형성되어있으므로, 상하부기판(1)(3)과 시일제(9)사이의 밀폐공간(10)에 수분이 침투되어 절연막(5)(6)에 수분이 침투되더라도 실리카 겔 흡수층(8)이 곧바로 흡수하게 되므로 박막 표시소자의 내습성을 종래 박막 표시소자에 비하여 월등히 향상할 수 있으며 그 사용수명을 길게하는 효과가 있다.In the thin film display device of the present invention as described above, since the silica gel absorbing layer 8 made of silica gel, which is a moisture absorbing material, is formed between the upper insulating film 5 and the light emitting layer 7, the upper and lower substrates 1, 3 and the sealing agent. Even though moisture penetrates into the enclosed space 10 between the layers 9, and the moisture penetrates into the insulating films 5 and 6, the silica gel absorbing layer 8 is immediately absorbed. Compared with the above, it is possible to greatly improve the service life.

제3도는 본 발명의 다른 실시예를 보인 것으로, 이에 도시한 박막 표시소자는 상기한 방법에 의하여 하부절연막(6)의 둘레 즉, 하부기판(3)의 내면에 흡수층(8)이 형성된 것이다.3 illustrates another embodiment of the present invention, in which the thin film display device includes an absorption layer 8 formed around the lower insulating layer 6, that is, on the inner surface of the lower substrate 3 by the method described above.

또한, 제4도는 본 발명의 또 다른 실시예를 보인 것으로, 이에 도시한 박막 표시소자는 상기와 동일한 방법에 의해 수분 침투가 가장 많은 상, 하부기판(1)(3)간에 흡수층(8)이 형성된 것이다.4 illustrates another embodiment of the present invention, in which the thin film display device includes an absorbing layer 8 between the upper and lower substrates 1 and 3 having the highest water penetration by the same method as described above. Formed.

이와같은 본 발명의 다른 실시예들은 전기한 일실시예와 같이 수분의 침투를 방지하거나 침투가 되더라도 흡수하여 동일한 효과를 기할 수 있게 된다.As described above, other embodiments of the present invention can prevent the penetration of moisture or absorb the same, even if the penetration is to achieve the same effect.

이상에서 본 발명은 몇가지 실시예를 들어 설명되어 있으나, 실리카 겔 흡수층은 밀폐공간 내부에 도시한 형태외에도 여러가지 형태로 형성될 수 있는 것이고, 그 두께로 한 실시예에서 약 2000Å으로 예시하였으나 그 수치는 단순한 설계변경 사항으로 그에 한정되지 않고 변경하여 실시할 수 있다.Although the present invention has been described with reference to several embodiments, the silica gel absorbent layer may be formed in various forms in addition to the form shown inside the sealed space, and the thickness thereof is illustrated as about 2000 kPa in one embodiment. Simple design changes are not limited to this and can be changed.

Claims (4)

상, 하부기판 위에 투명도전극과 배면전극이 각각 형성됨과 아울러 상, 하부기판의 내면에는 절연막이 각각 형성되고 양 절연막간에는 발광층이 형성된 박막 표시소자에 있어서, 상하부기판과 시일제로 둘러싸인 밀폐공간 내부에 실리카 겔 흡수층을 형성하여 구성함을 특징으로 하는 박막 표시소자.In the thin film display device in which a transparent electrode and a back electrode are formed on the upper and lower substrates, and an insulating film is formed on the inner surfaces of the upper and lower substrates, and a light emitting layer is formed between the insulating films, the silica is enclosed in an enclosed space surrounded by the upper and lower substrates and the sealing agent. A thin film display device comprising a gel absorption layer. 제1항에 있어서, 상기 실리카 겔 흡수층이 상부 절연막과 발광층간에 형성된 것임을 특징으로 하는 박막 표시소자 .The thin film display device of claim 1, wherein the silica gel absorbing layer is formed between an upper insulating film and a light emitting layer. 제1항에 있어서, 상기 실리카 겔 흡수층이 하부기판 내면의 하부 절연막 둘레에 형성된 것임을 특징으로 하는 박막 표시소자.The thin film display device of claim 1, wherein the silica gel absorbing layer is formed around a lower insulating film on an inner surface of a lower substrate. 제1항에 있어서, 상기 흡수층이 상, 하부 기판사이의 주벽 내측에 세워서 형성된 것임을 특징으로 하는 박막 표시소자.The thin film display device according to claim 1, wherein the absorbing layer is formed inside a circumferential wall between the upper and lower substrates.
KR1019850005100A 1985-07-16 1985-07-16 Thin display element KR890000332B1 (en)

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