KR870000744A - Device for manufacturing thin film single crystal - Google Patents

Device for manufacturing thin film single crystal Download PDF

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Publication number
KR870000744A
KR870000744A KR1019860004670A KR860004670A KR870000744A KR 870000744 A KR870000744 A KR 870000744A KR 1019860004670 A KR1019860004670 A KR 1019860004670A KR 860004670 A KR860004670 A KR 860004670A KR 870000744 A KR870000744 A KR 870000744A
Authority
KR
South Korea
Prior art keywords
thin film
single crystal
film single
semiconductor layer
manufacturing thin
Prior art date
Application number
KR1019860004670A
Other languages
Korean (ko)
Inventor
야스오 가노오
시게루 고지마
세쓰오 우스이
Original Assignee
오오가 노리오
쏘니 가부시기 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오오가 노리오, 쏘니 가부시기 가이샤 filed Critical 오오가 노리오
Publication of KR870000744A publication Critical patent/KR870000744A/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Abstract

내용 없음.No content.

Description

박막단결정(薄膜單結晶)의 제조장치Device for manufacturing thin film single crystal

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본원 발명에 의한 박막단결정 제조장치의 일실시예를 나타낸 구성도.1 is a block diagram showing an embodiment of a thin film single crystal manufacturing apparatus according to the present invention.

제2도(a)는 각기 시료상의 비임형성의 예를 나타낸 도면.2 (a) shows examples of beam formation on samples, respectively.

제3도는 비임을 복수비임으로 하는 수단의 일례를 나타낸 구성도.3 is a configuration diagram showing an example of a means for setting a beam to a plurality of beams.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 시료 2 : 에너지비임(레이저광)1: Sample 2: Energy beam (laser light)

21 : 에너지비임(멜트비임) 3 : 촬상수단21: energy beam (melt beam) 3: imaging means

Claims (1)

반도체층에 에너지비임을 조사하여 이 반도체층을 용융한 다음 재결정화시키는 박막단결정의 제조장치에 있어서, 상기 반도체층에 상기 에너지비임을 조사하는 수단과, 상기 반도체층에서 방사되는 방사광을 촬상수단으로 검출하는 수단을 구비하여 이루어진 박막단결정의 제조장치.An apparatus for manufacturing a thin film single crystal in which an energy beam is irradiated onto a semiconductor layer to melt and recrystallize the semiconductor layer, wherein the imaging means detects the energy beam from the semiconductor layer and radiates light emitted from the semiconductor layer. An apparatus for producing a thin film single crystal comprising means for forming the same. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019860004670A 1985-06-18 1986-06-12 Device for manufacturing thin film single crystal KR870000744A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP85-130764 1985-06-18
JP60130764A JPS61289617A (en) 1985-06-18 1985-06-18 Manufacturing device for single-crystal thin film

Publications (1)

Publication Number Publication Date
KR870000744A true KR870000744A (en) 1987-02-20

Family

ID=15042097

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860004670A KR870000744A (en) 1985-06-18 1986-06-12 Device for manufacturing thin film single crystal

Country Status (5)

Country Link
JP (1) JPS61289617A (en)
KR (1) KR870000744A (en)
DE (1) DE3620300A1 (en)
FR (1) FR2583572B1 (en)
GB (1) GB2177256B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2211210A (en) * 1987-10-16 1989-06-28 Philips Electronic Associated A method of modifying a surface of a body using electromagnetic radiation
WO1989004387A1 (en) * 1987-11-13 1989-05-18 Kopin Corporation Improved zone melt recrystallization method and apparatus
US5074952A (en) * 1987-11-13 1991-12-24 Kopin Corporation Zone-melt recrystallization method and apparatus
JPH01246829A (en) * 1988-03-28 1989-10-02 Tokyo Electron Ltd Beam annealing device
DE3818504A1 (en) * 1988-05-31 1991-01-03 Fraunhofer Ges Forschung METHOD AND DEVICE FOR THE CRYSTALIZATION OF THIN SEMICONDUCTOR LAYERS ON A SUBSTRATE MATERIAL
DE3921038C2 (en) * 1988-06-28 1998-12-10 Ricoh Kk Method for producing a semiconductor substrate or solid structure
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
US5173446A (en) * 1988-06-28 1992-12-22 Ricoh Company, Ltd. Semiconductor substrate manufacturing by recrystallization using a cooling medium
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
US5338388A (en) * 1992-05-04 1994-08-16 Mitsubishi Denki Kabushiki Kaisha Method of forming single-crystal semiconductor films
US8183498B2 (en) 2006-05-01 2012-05-22 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
US8927898B2 (en) 2006-05-01 2015-01-06 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
WO2008128781A1 (en) * 2007-04-24 2008-10-30 Limo Patentverwaltung Gmbh & Co. Kg Method for restructuring semiconductor layers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4155779A (en) * 1978-08-21 1979-05-22 Bell Telephone Laboratories, Incorporated Control techniques for annealing semiconductors
US4380864A (en) * 1981-07-27 1983-04-26 The United States Of America As Represented By The Secretary Of The Air Force Method for providing in-situ non-destructive monitoring of semiconductors during laser annealing process

Also Published As

Publication number Publication date
GB2177256A (en) 1987-01-14
DE3620300A1 (en) 1986-12-18
JPS61289617A (en) 1986-12-19
FR2583572A1 (en) 1986-12-19
GB2177256B (en) 1988-12-21
FR2583572B1 (en) 1990-05-11
GB8614683D0 (en) 1986-07-23

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WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid