KR860008698A - 플라즈마 에칭 시스템 - Google Patents

플라즈마 에칭 시스템 Download PDF

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Publication number
KR860008698A
KR860008698A KR1019860002789A KR860002789A KR860008698A KR 860008698 A KR860008698 A KR 860008698A KR 1019860002789 A KR1019860002789 A KR 1019860002789A KR 860002789 A KR860002789 A KR 860002789A KR 860008698 A KR860008698 A KR 860008698A
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KR
South Korea
Prior art keywords
frequency signal
plasma etching
etching system
radio frequency
signal source
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Application number
KR1019860002789A
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English (en)
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KR950009936B1 (ko
Inventor
에이취. 트레이시 데이비드
지. 발리스티 브리안
Original Assignee
램 리서취 코포레이션
씨. 웬델 버거
더 퍼킨 엘머 코포레이션
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Publication of KR860008698A publication Critical patent/KR860008698A/ko
Application granted granted Critical
Publication of KR950009936B1 publication Critical patent/KR950009936B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음

Description

플라즈마 에칭 시스템
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의하여 전반적으로 변형된 저주파 플라즈마 에칭 시스템을 개략 도시한 도면.
제2도는 제1도에 도시된 시스템에 사용되는 결합회로의 접속도.
* 도면의 주요부분에 대한 부호의 설명
10 : 저주파 플라즈마 에칭 시스템, 12 : 저주파 신호원, 14 : 저주파 매칭 회로망, 16, 18 : 전극, 20 : 리액터, 22 : 웨이퍼, 24 : 고주파 신호원, 26 : 고주파 매칭 결합회로, 28 : 트랩, 30 : 캐패시터, 32 : 인덕터, 34, 35 : 캐패시터.

Claims (8)

  1. 내부의 플라즈마 가스를 형성하기 위한 평면형 리액터와 한 쌍의 전극들을 포함하고 그 전극들중의 하나는 에칭될 웨이퍼를 그 위에 수납하도록 배치되며 전력원이 상기 전극들 쌍에 접속되는 플라즈마 에칭 시스템에 있어서, 상기 웨이퍼를 에칭하는 주 에너지원을 제공하도록 미리 정해진 출력을 갖는 비교적 낮은 라디오 주파수 신호원, 상기 비교적 낮은 라디오 주파수 신호원보다 상당히 낮은 미리 정해진 출력을 갖는 비교적 높은 라디오 주파수 신호원, 결합회로 상기 낮은 라디오 주파수 신호와 상기 높은 라디오 주파수 신호를 상기 결합회로에 인가하는 수단, 및 결합회로로부터의 결합된 낮은 무선 주파수 및 높은 무선 주파수 시호들을 상기 전극들의 쌍에 인가하는 수단이 구비되는 상기 플라즈마 에칭시스템.
  2. 제1항에 있어서, 상기 결합회로가 상기 높은 주파수 및 낮은 주파수 신호원들을 서로 절연하는 수단을 포함하는 상기 플라즈마 에칭 시스템.
  3. 제2항에 있어서, 상기 결합회로가 또한 상기 높은 주파수 신호가 상기 낮은 주파수 신호원으로 다시 공급되는 것을 방지하기 위하여 상기 높은 주파수 신호원으로 부터의 높은 주파수신호의 주파수에 동조되는 라디오 주파수 트랩을 포함하는 상기 플라즈마 에칭 시스템.
  4. 제3항에 있어서, 상기 결합회로가 또한 상기 무선 주파수 트랩을 통과한 낮은 주파수 신호가 상기 높은 주파수 신호원에 도달하는 것을 방지하는 용량성 수단을 포함하는 상기 플라즈마 에칭 시스템.
  5. 제4항에 있어서, 상기 결합회로가 또한 플라즈마가 상기 낮은 주파수 신호원에 의해 발생되고 있는 동안 높은 주파수 전력이 상기 높은 주파수 신호원으로 다시 반사되는 것을 최소화하기 위하여 임피던스 변환을 하는 매치회로망을 포함하는 상기 플라즈마 에칭 시스템.
  6. 제5항에 있어서, 상기 매치 회로망이 또한 플라즈마가 상기 평면형 리액터내에서 발생되지 않고 상기 높은 주파수 신호원이 상기 평면형 리액터를 포함한 부하에 매칭되지 않을 때 변하는 임피더스를 포함하는 상기 플라즈마 에칭 시스템.
  7. 제6항에 있어서, 상기 낮은 주파수 신호의 주파수가 대략 400㎑인 상기 플라즈마 에칭 시스템.
  8. 제7항에 있어서, 상기 높은 주파수 신호의 주파수가 대략 27㎒인 상기 플라즈마 에칭 시스템.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860002789A 1985-04-12 1986-04-12 플라즈마 에칭 장치 KR950009936B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/722,623 US4617079A (en) 1985-04-12 1985-04-12 Plasma etching system
US722,623 1985-04-12

Publications (2)

Publication Number Publication Date
KR860008698A true KR860008698A (ko) 1986-11-17
KR950009936B1 KR950009936B1 (ko) 1995-09-01

Family

ID=24902645

Family Applications (1)

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KR1019860002789A KR950009936B1 (ko) 1985-04-12 1986-04-12 플라즈마 에칭 장치

Country Status (3)

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US (1) US4617079A (ko)
JP (2) JPH0795544B2 (ko)
KR (1) KR950009936B1 (ko)

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JP3016821B2 (ja) * 1990-06-15 2000-03-06 東京エレクトロン株式会社 プラズマ処理方法
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Also Published As

Publication number Publication date
JPH0795544B2 (ja) 1995-10-11
JPH11251302A (ja) 1999-09-17
US4617079A (en) 1986-10-14
JPS61239627A (ja) 1986-10-24
KR950009936B1 (ko) 1995-09-01

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