KR860005452A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
KR860005452A
KR860005452A KR1019850009394A KR850009394A KR860005452A KR 860005452 A KR860005452 A KR 860005452A KR 1019850009394 A KR1019850009394 A KR 1019850009394A KR 850009394 A KR850009394 A KR 850009394A KR 860005452 A KR860005452 A KR 860005452A
Authority
KR
South Korea
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
KR1019850009394A
Other languages
Korean (ko)
Other versions
KR940010557B1 (en
Inventor
요오지 가또오
세이이찌 와다나베
미끼오 가마다
Original Assignee
쏘니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쏘니 가부시기가이샤 filed Critical 쏘니 가부시기가이샤
Publication of KR860005452A publication Critical patent/KR860005452A/en
Application granted granted Critical
Publication of KR940010557B1 publication Critical patent/KR940010557B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/432—Heterojunction gate for field effect devices
KR1019850009394A 1984-12-21 1985-12-13 Semiconductor device KR940010557B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59270350A JPS61147578A (en) 1984-12-21 1984-12-21 Semiconductor device
JP84-270350 1984-12-21

Publications (2)

Publication Number Publication Date
KR860005452A true KR860005452A (en) 1986-07-23
KR940010557B1 KR940010557B1 (en) 1994-10-24

Family

ID=17485034

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850009394A KR940010557B1 (en) 1984-12-21 1985-12-13 Semiconductor device

Country Status (7)

Country Link
JP (1) JPS61147578A (en)
KR (1) KR940010557B1 (en)
CA (1) CA1238122A (en)
DE (1) DE3545434C2 (en)
FR (1) FR2582152B1 (en)
GB (1) GB2168847B (en)
NL (1) NL8503515A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2600821B1 (en) * 1986-06-30 1988-12-30 Thomson Csf HETEROJUNCTION AND DUAL CHANNEL SEMICONDUCTOR DEVICE, ITS APPLICATION TO A FIELD EFFECT TRANSISTOR, AND ITS APPLICATION TO A NEGATIVE TRANSDUCTANCE DEVICE
DE59010851D1 (en) * 1989-04-27 1998-11-12 Max Planck Gesellschaft Semiconductor structure with a 2D charge carrier layer and manufacturing method
US5385865A (en) * 1990-04-26 1995-01-31 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
CN102439830A (en) 2008-09-23 2012-05-02 艾罗威罗门特公司 Motor air flow cooling

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212182A (en) * 1982-06-03 1983-12-09 Fujitsu Ltd Semiconductor device
EP0206274B1 (en) * 1985-06-21 1991-10-23 Honeywell Inc. High transconductance complementary ic structure

Also Published As

Publication number Publication date
JPS61147578A (en) 1986-07-05
FR2582152A1 (en) 1986-11-21
KR940010557B1 (en) 1994-10-24
NL8503515A (en) 1986-07-16
FR2582152B1 (en) 1989-12-08
GB2168847B (en) 1988-05-25
DE3545434A1 (en) 1986-07-03
DE3545434C2 (en) 1995-07-20
GB8531441D0 (en) 1986-02-05
GB2168847A (en) 1986-06-25
CA1238122A (en) 1988-06-14

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee