KR850004591A - Hydrophobic Crystalline Tecto Silicate Material and Method of Making the Same - Google Patents

Hydrophobic Crystalline Tecto Silicate Material and Method of Making the Same Download PDF

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KR850004591A
KR850004591A KR1019840008393A KR840008393A KR850004591A KR 850004591 A KR850004591 A KR 850004591A KR 1019840008393 A KR1019840008393 A KR 1019840008393A KR 840008393 A KR840008393 A KR 840008393A KR 850004591 A KR850004591 A KR 850004591A
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에스 디페브스 케네트 (외 1)
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원본미기재
더 스코파스 테크놀로지 컴패니 인코오포레이티드
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    • A01K1/015Floor coverings, e.g. bedding-down sheets ; Stable floors
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    • AHUMAN NECESSITIES
    • A24TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
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    • A61L15/00Chemical aspects of, or use of materials for, bandages, dressings or absorbent pads
    • A61L15/16Bandages, dressings or absorbent pads for physiological fluids such as urine or blood, e.g. sanitary towels, tampons
    • A61L15/18Bandages, dressings or absorbent pads for physiological fluids such as urine or blood, e.g. sanitary towels, tampons containing inorganic materials
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    • B01J20/00Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
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    • B01J20/00Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
    • B01J20/02Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material
    • B01J20/10Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising silica or silicate
    • B01J20/16Alumino-silicates
    • B01J20/18Synthetic zeolitic molecular sieves
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Abstract

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Description

소수성의 결정질 텍토 실리케이트 물질 및 그 제조방법Hydrophobic Crystalline Tecto Silicate Material and Method of Making the Same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (25)

1-4부의 하기식(A)기가 존재하는 것을 특징으로 하는 실리카성 격자에 알루미늄이 없는 자리로 구성되는 규칙적 기하학 모양을 지닌 소수성의 기공성 결정질의 텍토실리케이트 물질, ≡SiOR (A) 상기식에서, R은 알루미늄보다 점전기원이 더 작은 치환체임.Hydrophobic pore crystalline tetosilicate material having a regular geometric shape consisting of a site free of aluminum in a siliceous lattice characterized by the presence of 1-4 parts of the following formula (A) group, ≡SiOR (A) R is a substituent having a smaller point source than aluminum. 제1항에 있어서, R이 히드록실기보다 점전기원이 더 작은 치환체인 것을 특징으로 하는 물질.The material of claim 1, wherein R is a substituent having a smaller point source than the hydroxyl group. 제2항에 있어서, R이 C1-C4-알킬, C1-C4-아실 및 하기식(B)로 구성되는 그룹으로부터 선택되는 치환체인 것을 특징으로 하는 물질. SiR' nXp (B) 상기식에서, R' C1-C4-알킬, 시클로알킬, 아릴, C1-C4-아실, 아르알킬 또는 이의 혼합물로부터 선택되는 치환체이며, X는 할로겐원자 또는 저급-알콕시기이며, n은 0-3이며, p는 (3)-(n)임.The substance according to claim 2, wherein R is a substituent selected from the group consisting of C 1 -C 4 -alkyl, C 1 -C 4 -acyl and the following formula (B). SiR ′ nXp (B) wherein R ′ C 1 -C 4 -alkyl, cycloalkyl, aryl, C 1 -C 4 -acyl, aralkyl or a mixture thereof, X is a halogen atom or lower- An alkoxy group, n is 0-3 and p is (3)-(n). 제2항에 있어서, 알루미늄이 없는 자리가 1-2개의 하기식 (C)의 SiR'q 단위에 다리결합되는 것을 특징으로 하는 물질. SiR'q (C) 상기식에서, q는 0-2이며, R'는 C1-C4-알킬, 시클로알킬, 아릴 C1-C4-아실, 아르알킬 또는 이의 혼합물로 부터 선택되는 치환체임.A material according to claim 2, wherein the site without aluminum is bridged to 1-2 SiR'q units of formula (C). SiR'q (C) wherein, q is 0 to 2 and, R 'is C 1 -C 4 - alkyl, cycloalkyl, aryl C 1 -C 4 - acyl, aralkyl, or substituents being selected from a mixture thereof . 제3항 또는 제4항에 있어서, 상기 알루미늄이 없는 자리는 알루미늄성 텍토실리케이트 격자로부터 알루미늄을 제거하는 방법에 의해서 발생된 것을 특징으로 하는 물질.5. A material according to claim 3 or 4, wherein the site without aluminum is generated by a method of removing aluminum from an aluminum tactosilicate grating. 제5항에 있어서, R이 C1-C4-저급알킬 또는 R'가 C1-C4-알킬이며, n이 1-2인 SiR'n C1기인 것을 특징으로 하는 물질.The method of claim 5, wherein, R is C 1 -C 4 - lower alkyl, R 'is C 1 -C 4 - alkyl, n material, characterized in that C 1 SiR'n group of 1-2. 제5항에 있어서, 알루미늄이 제거한 후 격자에 있어서 Al에 대한 Si의 비율이 25인 것을 특징으로 하는 물질6. The material of claim 5 wherein the ratio of Si to Al in the lattice after removal of aluminum is 25. 제7항에 있어서, 결자엣는 실질적으로 알루미늄이 존재하지 않음을 특징으로 하는 물질.8. The material of claim 7, wherein the grain edge is substantially free of aluminum. 제1항에 있어서, 수증기의 흡착력이 암모니아 증기 흡착력의 20-80%이상이 아닌 것을 특징으로 하는 물질.The material as claimed in claim 1, wherein the adsorption force of water vapor is not more than 20-80% of the ammonia vapor adsorption force. 천연의 또는 합성의 알루미늄성 텍토실리케이트의 출발 물질 격자에서 약 4개의 ≡Si-OH부의 존재에 의해서 특징지워지는 알루미늄이 부족한 자리를 산출하고, 수화된 물을 제거하기 위해 알루미늄이 부족한 텍토실리케이트를 가열하고, ≡Si-OH부의 유도체와 시약과 반응시켜 자리당 약 1-4개의 부가 하기식(A)의 부로 전환시키는 단계로 구성되는 것을 특징으로 하는 규칙적 기하학적 모양의 소수성을 지닌 기공성의 결정질 물질을 산출하는 방법.The aluminum-deficient tectosilicate is heated to remove the hydrated water, yielding an aluminum-deficient site characterized by the presence of about 4 ≡Si-OH moieties in the starting material lattice of the natural or synthetic aluminum tectosilicate. And reacting with a derivative and a reagent of the Si-OH moiety to convert about 1-4 additions to the moiety of the following formula (A). How to calculate. ≡Si-OR (A)-Si-OR (A) 상기식에서, R은 알루미늄보다 점전기원이 더 적은 치환체임.Wherein R is a substituent with less point source than aluminum. 제10항에 있어서, R이 C1-C4알킬, C1-C4아실 또는 하기식(B)로부터 선택되는 치환체이며, 2-4개의 Si-OH부가 하기식(C)의 단위에 의해 다리 결합되는 것을 특징으로 하는 방법.The compound according to claim 10, wherein R is a substituent selected from C 1 -C 4 alkyl, C 1 -C 4 acyl or the following formula (B), wherein 2-4 Si-OH moieties are represented by a unit of the following formula (C): The legs are combined. SiR' nXp (B) SiR'q (C)SiR 'nXp (B) SiR'q (C) 상기식에서, R'는 시클로알킬, 아릴, 아실, 알킬, 아르알킬 또는 이의 혼합물로부터 선택되는 치환체이며, X는 할로 또는 (저급)알콕시이며, 3은 0-2의 수이며, P는 (3)-(n)이며 q는 0-2의 수이며, R는 C1-C4알킬,시클로알킬, 아릴, C1-C4아실, 아르알킬 또는 이의 혼합물로부터 선택됨.Wherein R 'is a substituent selected from cycloalkyl, aryl, acyl, alkyl, aralkyl or mixtures thereof, X is halo or (lower) alkoxy, 3 is 0-2 and P is (3) -(n) and q is a number from 0-2, R is selected from C 1 -C 4 alkyl, cycloalkyl, aryl, C 1 -C 4 acyl, aralkyl or mixtures thereof. 제11항에 있어서, 두=Si-OH부와 유도체와 시약과의 반응에 의해 두개의 HX분자가 제거되며 -SiR2-에 의해 다리결합되는 것을 특징으로 하는 방법.12. The method according to claim 11, wherein two HX molecules are removed and bridged by -SiR 2 -by reaction of two = Si-OH moieties with a derivative and a reagent. 제11항에 있어서, R은 C1-C4알킬이며, R'는 C1-C4알킬이며, n은 1-2의 수이며, X는 클로로인것을 특징으로 하는 방법.12. The method of claim 11, wherein R is C 1 -C 4 alkyl, R 'is C 1 -C 4 alkyl, n is a number from 1-2 and X is chloro. 제 10항에 있어서, 출발물질에서의 Si:Al의 비가 5:1이상인 것을 특징으로 하는 방법.The method of claim 10 wherein the ratio of Si: Al in the starting material is at least 5: 1. 제11항에 있어서, 알루미늄성 텍토실리케이트를 수용성 무기산에 노출시켜 알루미륨이 부족한 자리를 산출하는 것을 특징으로 하는 방법.12. The method of claim 11, wherein the aluminum tectosilicate is exposed to a water soluble inorganic acid to yield a site lacking aluminium. 제15항에 있어서, 실질적으로 모든 알루미늄을 알루미늄성 텍토실리케이트 격자로부터 제거하는 것을 특징으로 하는 방법.16. The method of claim 15, wherein substantially all of the aluminum is removed from the aluminum tectosilicate lattice. 알루미늄성 토텍실리케이트의 격자자리로부터 알루미늄을 제거하여 약 4개의 =SiOH부에 의해 특징지워지는 알루미늄이 부족한 자리를 산출하고; 완전한 격자가 유지되는 온도에서 알루미늄이 부족한 자리를 탈수시키고; ≡SiOH부를 디할로디알킬실란, 디알콕시디알킬실란, C1-C4-알칸을 또는 C1-C4-알킬할라이드로부터 선택되는 유도체와 시약과 반응시켜 각 자리당 약 1-4개의 ≡SiOH부를 하기식(A)부터 전환시키거나 적어도 각 자리당 적어도 두개의 ≡SiOH부를 하기식(C) 단위에 의해 다리 결합시키는 단계로 구성되는 것을 특징으로 하는 텍토실리케이트 물질의 친수성을 감소시키는 방법.Removing aluminum from the lattice sites of the aluminum totecsilicate to yield a site lacking aluminum characterized by about four = SiOH portions; Dewatering the aluminum deficient site at a temperature at which the complete lattice is maintained; ≡SiOH moiety is reacted with a reagent selected from dihalodialkylsilane, dialkoxydialkylsilane, C 1 -C 4 -alkane or C 1 -C 4 -alkyl halide with reagents and about 1-4 ≡SiOH at each site A method for reducing the hydrophilicity of a tectosilicate material, comprising converting the moiety from the following formula (A) or bridge-linking at least two 부를 SiOH moieties at least for each site by the following formula (C) units. SiOR (A) SiR'q (C)SiOR (A) SiR'q (C) 상기식에서, R은 C1-C4-알킬 또는 SiR2X로 부터 선택되는 치환체이며, X는 할로겐 원자이며, R'는 C1-C4-알킬, 시클로알킬, 아릴, C1-C4-아실, 아르알킬 또는 이의 혼합물로 부터 선택되며 q는 0-2임.Wherein R is a substituent selected from C 1 -C 4 -alkyl or SiR 2 X, X is a halogen atom, R ′ is C 1 -C 4 -alkyl, cycloalkyl, aryl, C 1 -C 4 -Selected from acyl, aralkyl or mixtures thereof and q is 0-2. 제17항에 있어서, 유도체화 시약을 디클로로디메틸실란 또는 메탄올인 것을 특징으로 하는 방법.18. The method of claim 17, wherein the derivatization reagent is dichlorodimethylsilane or methanol. 제17항에 있어서, 출발물질은 클로노프틸로라이트인 것을 특징으로 하는 방법.18. The method of claim 17, wherein the starting material is clonophthyolite. 유효량의 제1항의 물질을 포함하고 있는 것을 특징으로 하는 흡수성의 내부 중핵부로 구성된 기저귀.A diaper composed of an absorbent inner core portion comprising an effective amount of the substance of claim 1. 유효량의 제1항의 물질을 포함하고 있는 것을 특징으로 하는 흡수성의 내부 중핵부로 구성된 베드패드.A bed pad composed of an absorbent inner core portion comprising an effective amount of the substance of claim 1. 유효량의 제1항의 물질을 포함한 가축 두엄.Livestock manure containing an effective amount of the substance of paragraph 1. 소수성의 제1항의 물질을 포함한 기가레트 또는 파이프필터.Gigalett or pipe filter comprising the hydrophobic material of claim 1. 제23항에 있어서, 약 40-50mg의 소수성 물질을 포함하고 있는 필터.The filter of claim 23, comprising about 40-50 mg of hydrophobic material. 제1항의 물질을 포함하고 있는 시가레르 또는 시가를 싸는 외피.A cigar or cigar covering the substance of claim 1. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019840008393A 1983-12-27 1984-12-27 Hydrophobic crystalline micro porous silaceous materials of regular geometry KR900006131B1 (en)

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US06/565,460 US4683318A (en) 1983-12-27 1983-12-27 Hydrophobic, crystalline, microporous silaceous materials of regular geometry
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DK368585A (en) 1985-10-17
ATE47394T1 (en) 1989-11-15
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PH22171A (en) 1988-06-28
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FR2557091B1 (en) 1989-06-02
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WO1985002848A1 (en) 1985-07-04
DK368585D0 (en) 1985-08-13
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AR242125A1 (en) 1993-03-31
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HU199147B (en) 1990-01-29
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AU3789985A (en) 1985-07-12
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PH23441A (en) 1989-08-07
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FI74976B (en) 1987-12-31
ES539044A0 (en) 1986-01-16
IN164502B (en) 1989-04-01
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US4683318A (en) 1987-07-28
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