KR850004339A - Cold cathode for cathode ray tube using diode - Google Patents

Cold cathode for cathode ray tube using diode Download PDF

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Publication number
KR850004339A
KR850004339A KR1019830006061A KR830006061A KR850004339A KR 850004339 A KR850004339 A KR 850004339A KR 1019830006061 A KR1019830006061 A KR 1019830006061A KR 830006061 A KR830006061 A KR 830006061A KR 850004339 A KR850004339 A KR 850004339A
Authority
KR
South Korea
Prior art keywords
diode
type semiconductor
cathode
ray tube
electron
Prior art date
Application number
KR1019830006061A
Other languages
Korean (ko)
Inventor
손상호
Original Assignee
허신구
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 허신구, 주식회사 금성사 filed Critical 허신구
Priority to KR1019830006061A priority Critical patent/KR850004339A/en
Publication of KR850004339A publication Critical patent/KR850004339A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/04—Cathodes

Landscapes

  • Cold Cathode And The Manufacture (AREA)

Abstract

내용 없음No content

Description

다이오드를 이용한 브라운관용 냉음극Cold cathode for cathode ray tube using diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 종래의 다이오드를 설명하기 위한 상태도.1 is a state diagram for explaining a conventional diode.

제2도는 본 발명의 설치 상태도.2 is an installation state diagram of the present invention.

제3도는 본 발명의 다이오드를 설명하기 위한 상태도.3 is a state diagram for explaining the diode of the present invention.

제4도의 (가)는 본 발명 다이오드의 금속전극(8)의 확대 단면도. (나)는 본 발명 다이오드의 금속전극(8)의 확대 측면도.4A is an enlarged cross-sectional view of the metal electrode 8 of the diode of the present invention. (B) is an enlarged side view of the metal electrode 8 of the diode of the present invention.

제5도의 (가)는 본 발명 다이오드의 전압-전류 특성도. (나)는 본 발명 다이오드의 전류-시간 특성도.5A is a voltage-current characteristic diagram of the diode of the present invention. (B) is a current-time characteristic diagram of the diode of the present invention.

Claims (2)

전자총(1)의 내부에 그리고(2)와 양극(3)이 설치된 전자총 음극에 있어서, P형 반도체(5)와 N형 반도체(6)의 농도를 높게하여 공간 전하층(7)을 엷게 형성하고, N형 반도체(6)의 길이를 P형 반도체(5)의 길이보다 짧게 형성하여 다이오드(4)를 구성하되, 이 다이오드(4)를 상기의 전자총(1)의 내부에 설치하여 외부전원(9)만으로 다량의 전자를 금속전극(8)에서 방출시키게 구성함을 특징으로 하는 다이오드를 이용한 브라운관용 냉음극.In the electron gun cathode provided with (2) and the anode (3) inside the electron gun (1), the space charge layer (7) is made thin by increasing the concentration of the P-type semiconductor (5) and the N-type semiconductor (6). The length of the N-type semiconductor 6 is shorter than that of the P-type semiconductor 5 to form the diode 4, and the diode 4 is installed inside the electron gun 1 to provide an external power source. Cold cathode for a cathode ray tube using a diode, characterized in that (9) alone to emit a large amount of electrons from the metal electrode (8). 제1항에 있어서, 다이오드(4)의 N형 반도체(6)의 측단중앙부 위에 옹스트롬 단위(Å)의 전자 방출부(8a)를 형성시킨 후 그의 외주연에 밀리메타 단위(mm)의 전자 흡수부(8b)를 형성하여 대부분의 전자가 전자방출부(8a)를 통하여 방출하게 금속전극(8)을 구성함을 특징으로 하는 다이오드를 이용한 브라운관용 냉음극.The method of claim 1, wherein the electron emission portion 8a in an angstrom unit is formed on the side end center portion of the N-type semiconductor 6 of the diode 4, and thereafter, the electron absorption in millimeters (mm) is formed on the outer circumference thereof. Cold cathode for a cathode ray tube using a diode, characterized in that the metal electrode (8) is formed to form a portion (8b) so that most of the electrons are emitted through the electron emitting portion (8a). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019830006061A 1983-12-21 1983-12-21 Cold cathode for cathode ray tube using diode KR850004339A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019830006061A KR850004339A (en) 1983-12-21 1983-12-21 Cold cathode for cathode ray tube using diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019830006061A KR850004339A (en) 1983-12-21 1983-12-21 Cold cathode for cathode ray tube using diode

Publications (1)

Publication Number Publication Date
KR850004339A true KR850004339A (en) 1985-07-11

Family

ID=55177173

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830006061A KR850004339A (en) 1983-12-21 1983-12-21 Cold cathode for cathode ray tube using diode

Country Status (1)

Country Link
KR (1) KR850004339A (en)

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