KR840005057A - Preparation of Silicon Carbide with Large Specific Surface Area - Google Patents

Preparation of Silicon Carbide with Large Specific Surface Area Download PDF

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Publication number
KR840005057A
KR840005057A KR1019830002402A KR830002402A KR840005057A KR 840005057 A KR840005057 A KR 840005057A KR 1019830002402 A KR1019830002402 A KR 1019830002402A KR 830002402 A KR830002402 A KR 830002402A KR 840005057 A KR840005057 A KR 840005057A
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KR
South Korea
Prior art keywords
preparation
surface area
specific surface
silicon carbide
large specific
Prior art date
Application number
KR1019830002402A
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Korean (ko)
Other versions
KR910001302B1 (en
Inventor
유끼히로 요다 (외 4)
Original Assignee
가사마 유우이찌로오
미쓰이 도오아쓰 가가꾸가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 가사마 유우이찌로오, 미쓰이 도오아쓰 가가꾸가부시기가이샤 filed Critical 가사마 유우이찌로오
Publication of KR840005057A publication Critical patent/KR840005057A/en
Application granted granted Critical
Publication of KR910001302B1 publication Critical patent/KR910001302B1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

내용 없음No content

Description

비(比)표면적이 넓은 탄화규소분의 제법Preparation of Silicon Carbide with Large Specific Surface Area

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 실시에 사용하는 반응로의 단면도의 1예를 표시한 도.1 is a diagram showing one example of a cross-sectional view of a reactor used in the practice of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 노벽 2 : 노벽에 내접하는 노재(爐材)1: furnace wall 2: furnace material inscribed in the furnace wall

3, 8 : 덕트 4 : 연소버어너3, 8: Duct 4: Combustion burner

5, 6, 7 : 노즐5, 6, 7: nozzle

Claims (1)

단체탄소의 에어러솔과 이산화규소 또는 단체규소의 에어러솔의 분산질의 혼합물이며 그의 C/Si(식량비)가 3보다 큰 것을 포집하여 강열하는 것을 특징으로 하는 비표면적이 넓은 탄화규소분의 제법.A process for the preparation of silicon carbide powder having a large specific surface area, characterized in that it is a mixture of dispersoids of aerosols of single carbon and silicon dioxide or of aerosols of single silicon. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019830002402A 1982-06-01 1983-05-31 Process for production of silicon carbide KR910001302B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP92215 1982-06-01
JP57092215A JPS58213621A (en) 1982-06-01 1982-06-01 Preparation of slicon carbide powder having large specific surface area
JPP2215 1982-06-01

Publications (2)

Publication Number Publication Date
KR840005057A true KR840005057A (en) 1984-11-03
KR910001302B1 KR910001302B1 (en) 1991-03-02

Family

ID=14048213

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830002402A KR910001302B1 (en) 1982-06-01 1983-05-31 Process for production of silicon carbide

Country Status (2)

Country Link
JP (1) JPS58213621A (en)
KR (1) KR910001302B1 (en)

Also Published As

Publication number Publication date
JPS58213621A (en) 1983-12-12
KR910001302B1 (en) 1991-03-02

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