KR840001906Y1 - Temperature control and high voltage generating apparatus - Google Patents

Temperature control and high voltage generating apparatus Download PDF

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Publication number
KR840001906Y1
KR840001906Y1 KR2019820010097U KR820010097U KR840001906Y1 KR 840001906 Y1 KR840001906 Y1 KR 840001906Y1 KR 2019820010097 U KR2019820010097 U KR 2019820010097U KR 820010097 U KR820010097 U KR 820010097U KR 840001906 Y1 KR840001906 Y1 KR 840001906Y1
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South Korea
Prior art keywords
triac
temperature control
high voltage
resistor
generating apparatus
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KR2019820010097U
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Korean (ko)
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KR840003340U (en
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김창선
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김창선
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • G05D23/2033—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature details of the sensing element
    • G05D23/2034—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature details of the sensing element the sensing element being a semiconductor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Temperature (AREA)

Abstract

내용 없음.No content.

Description

온도 제어 및 고압 발생 장치Temperature control and high pressure generator

제1도는 본 고안의 회로도.1 is a circuit diagram of the present invention.

제2도는 열감지용 반도체 특성의 비교도.2 is a comparative diagram of semiconductor characteristics for thermal sensing.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

SW : 메인 스위치 SW2: 버튼 스위치SW: Main Switch SW 2 : Button Switch

TRIAC : 트라이악 YT : 열감지용 방전소자TRIAC: Triac YT: Discharge Element for Thermal Sensing

DA, DS : 방전소자 D1: 정류기DA, DS: discharge element D 1 : rectifier

RV : 볼륨 R1,R2: 저항RV: Volume R 1 , R 2 : Resistance

C1,C2,C3: 콘덴서 H : 히터C 1 , C 2 , C 3 : Condenser H: Heater

HV : 점화포인트HV: Ignition Point

본 고안은 열감지 소자로서 직접 트라이악(TRIAC)을 작동하여 온도 제어 및 점화용 고압을 발생시킬 수 있는 온도 제어 및 고압 발생 장치에 관한 것으로 전원부와 증폭부가 필요없이 간단한 회로로서 구성할 수 있는 것에 목적을 둔 것이다.The present invention relates to a temperature control and high pressure generator that can generate a high pressure for temperature control and ignition by directly operating a triac as a heat sensing element, and can be configured as a simple circuit without the need for a power supply and an amplification unit. It is purpose.

종래의 일반적인 온도 제어는 열감지소자를 사용하되 열감지 상태가 미흡하므로 필수적으로 증폭 장치 및 전원부를 별도로 설치하여 반도체 또는 전류 개폐기를 동작시켜 전류를 조절하면서 온도를 제어하고 점화용 고압 발생장치 또한 발진, 출력, 증폭 등의 복잡한 회로 구성을 필요로 하였던 것이므로 회로가 복잡함에 따라 부피가 커지는 결점이 있었던 것이다.Conventional general temperature control uses a heat sensing element, but the heat sensing state is insufficient. Essentially, the amplification device and the power supply unit are installed separately to operate a semiconductor or a current switch to control the temperature while controlling the current, and the high-voltage generator for ignition also oscillates. Since complex circuit configurations such as power output, amplification, etc. were required, there was a drawback that the bulky circuit became bulky.

본 고안은 이와같은 종래의 결점을 적게하기 위하여 별도의 증폭 및 전원부가 필요없이 열감지소자로서 직접 반도체전류 개폐기(TRIAC)를 작동하여 간단한 구조로서 전류 제어 및 고압을 발생시킬 수 있도록 한 것으로 이를 첨부된 회로도에 의하여 상세히 설명하면 다음과 같다.The present invention is to operate the semiconductor current switch (TRIAC) directly as a thermal sensing element without the need for a separate amplification and power supply in order to reduce the conventional drawbacks so that it can generate a current control and high voltage as a simple structure attached to this When described in detail by the circuit diagram as follows.

메인스위치(SWI)를 연결하여 열감지용 반도체 소자(YT)를 직렬한 볼륨(RV)과 콘덴서(C1)를 병렬로서 방전소자(DA)와 저항(R1)을 연결하여 방전소자(DA)는 트라이악(TRIAC)의 게이트(G)에 연결하고 저항(R1)은 트라이악(TRIAC)의 주전극에 연결하여 전류 제어부(P1)을 구성하고, 버튼 스위치(SW2)를 연결하여 정류기(D1)와 저항(R2) 및 방전소자(DS)를 직렬로서 1차코일(L1)의 일측선에 연결하고 타측선은 저항(R2)의 양단에 콘덴서(C2,C3)를 별렬 연결하여 히터(H)를 통하여 트라이악(TRIAC )의 주전극에 연결하며 2차코일(L2)에는 점화포인트(H. V)를 연결하여 고압발생부( P)를 구성하여서 된 것이다.The discharge device DA is connected by connecting the discharge device DA and the resistor R 1 in parallel with the volume RV and the capacitor C 1 in series by connecting the main switch SWI to the heat sensing semiconductor device YT in series. Is connected to the gate (G) of the triac (TRIAC) and the resistor (R 1 ) is connected to the main electrode of the triac (TRIAC) to configure the current control unit (P 1 ), by connecting the button switch (SW 2 ) Connect rectifier D 1 , resistor R 2 and discharge element DS in series with one side of primary coil L 1 , and the other side with capacitor C 2 , C at both ends of resistor R 2 . 3 ) by connecting them separately to the main electrode of the triac (TRIAC) through the heater (H) and to the secondary coil (L 2 ) by connecting the ignition point (H. V) to form a high-pressure generating unit (P) It is.

도면중 미설명 부호 Fr는 1,2차 코일(L1,L2)내의 페라이트자심(Ferrite Core)을 표시한 것이다.In the figure, reference numeral Fr denotes a ferrite core in the primary and secondary coils L 1 and L 2 .

이와 같은 본 고안의 작용 효과를 설명하면 다음과 같다.Referring to the effects of the present invention as follows.

스위치(SW1)를 연결하면 트라이악(TRIAC)의 양단에 전압이 형성되어 저항( R)을 통한 전류가 콘덴서(C1)에 충전되고 콘덴서(C1)에 임의의 전압이 도달하게 되면 방전소자(DA)가 순간 방전을 개시하여 트라이악(TRIAC)의 게이트(G)에 기동 전류가 트리거 되게 되므로 트라이악(TRIAC)이 도통하게 되어 히터(H)가 가열되게 되는 것이다.Switch (SW 1) to when the triac (TRIAC) when a voltage is formed across the current through the resistor (R) is charged in the capacitor (C 1) to any of a voltage of the capacitor (C 1) the discharge of the connection Since the device DA starts instantaneous discharge and the start current is triggered to the gate G of the triac TRIAC, the triac TRIAC conducts and the heater H is heated.

따라서 열감지용 반도체소자(YT)는 히터(H)의 온도를 감지하여 임의의 온도에서 트라이악(TRIAC)의 전류를 감소시켜 히터(H)의 발열량을 조절하면서 온도 제어를 하게되는 것이며, 이때 버튼 스위치(SW2)를 눌러주면 전류는 다이오드(D1)를 통하여 변환된 직류가 콘덴서(C2)에 충전되어 평활하게 됨과 동시에 저항(R2)에 흐르게 되는 전류는 콘덴서(C3)에 충전하게 되어 콘덴서(C3)에 임의의 전압으로 충전이 완료되면 방전소자(DS)는 방전을 개시하여 1차 코일(L1)에 순간적으로 급격한 전류가 흐르게 되면서 페라이트자심(Fr)이 자화되어 2차코일(L2)에 유기되는 전압이 고압으로 발생되는 것이므로 점화포인트(H. V)를 고성능으로 활용할 수 있는 것이다.Therefore, the thermal sensing semiconductor element YT senses the temperature of the heater H and reduces the current of the triac triac at a certain temperature to control temperature while controlling the amount of heat generated by the heater H. In this case, the button When the switch SW 2 is pressed, the current flows through the diode D 1 to the capacitor C 2 to be smoothed, and at the same time, the current flowing through the resistor R 2 is charged to the capacitor C 3 . When the capacitor C 3 is charged with a certain voltage, the discharge element DS starts discharging, and suddenly a rapid current flows in the primary coil L 1 , and the ferrite magnetic core Fr is magnetized. Since the voltage induced in the charcoal (L 2 ) is generated at a high pressure, the ignition point (H. V) can be utilized with high performance.

이와 같이 된 본 고안은 전원부와 증폭부를 별도로 설치하지 않고 열감지소자로서 직접 트라이악을 작동하여 전류 제어 및 점화용 고압을 발생시킬 수 있는 것으로서 간단한 회로 구성에 의하여 극히 소형의 제품을 제공할 수 있는 것이다.In this way, the present invention is capable of generating a high voltage for current control and ignition by directly operating a triac as a heat sensing element without separately installing a power supply and an amplification part, which can provide an extremely small product by a simple circuit configuration. will be.

Claims (1)

도시한 바와 같이 열감지용 반도체소자(YT)와 볼륨(RV), 콘덴서(C1), 저항 (R1), 방전소자(DA) 및 트라이악(TRIAC)을 회로로 구성한 전류 제어부(P1)와 정류기 (D1)와 저항(R2), 방전소자(DS) 및 콘덴서(C1,C2)를 1차코일(L1)에 연결하고 2차코일 (L2)에 점화포인트(H. V)를 연결하여 회로로 구성한 고압발생부(P)를 전기적으로 연결하여서 된 온도 제어 및 고압 발생장치.As shown in the figure, the current control unit P 1 constitutes a thermal sensing semiconductor element YT, a volume RV, a capacitor C 1 , a resistor R 1 , a discharge element DA, and a triac TriAC. Connect the rectifier (D 1 ), resistor (R 2 ), discharge element (DS) and condenser (C 1 , C 2 ) to the primary coil (L 1 ) and the ignition point (H 2 ) on the secondary coil (L 2 ). Temperature control and high pressure generator by connecting high pressure generator (P) composed of circuit by connecting V).
KR2019820010097U 1982-12-16 1982-12-16 Temperature control and high voltage generating apparatus KR840001906Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019820010097U KR840001906Y1 (en) 1982-12-16 1982-12-16 Temperature control and high voltage generating apparatus

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Application Number Priority Date Filing Date Title
KR2019820010097U KR840001906Y1 (en) 1982-12-16 1982-12-16 Temperature control and high voltage generating apparatus

Publications (2)

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KR840003340U KR840003340U (en) 1984-07-25
KR840001906Y1 true KR840001906Y1 (en) 1984-09-26

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