KR830005560A - Ready fracture residual stress measurement - Google Patents

Ready fracture residual stress measurement Download PDF

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Publication number
KR830005560A
KR830005560A KR1019810000136A KR810000136A KR830005560A KR 830005560 A KR830005560 A KR 830005560A KR 1019810000136 A KR1019810000136 A KR 1019810000136A KR 810000136 A KR810000136 A KR 810000136A KR 830005560 A KR830005560 A KR 830005560A
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South Korea
Prior art keywords
strain
gauge
laser beam
stress
tested
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Application number
KR1019810000136A
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Korean (ko)
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KR840001814B1 (en
Inventor
루에디거 메이더 비르틀 존
고든 존즈 마샬
Original Assignee
샘손 헬프고트
제너럴 이렉트릭 컴패니
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Priority to KR1019810000136A priority Critical patent/KR840001814B1/en
Publication of KR830005560A publication Critical patent/KR830005560A/en
Application granted granted Critical
Publication of KR840001814B1 publication Critical patent/KR840001814B1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N19/00—Investigating materials by mechanical methods
    • G01N19/06—Investigating by removing material, e.g. spark-testing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Heat Treatment Of Articles (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)

Abstract

내용 없음No content

Description

준비 파괴 잔류응력측정Ready fracture residual stress measurement

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 구멍용융을 위한 3소자 로제트 스트레인 게이지의 평면도.1 is a plan view of a three element rosette strain gauge for hole melting.

제2도는 파이프의 내부면의 잔류응력측정을 위한 지역적 용융을 실현하기 위한 광학과 레이저를 표시하는 원자로 파이프를 통한 단면도.2 is a cross sectional view through a reactor pipe showing optics and a laser to realize local melting for residual stress measurements on the inner surface of the pipe.

제3도는 레이저 스트레인 측정장치의 계통도.3 is a schematic diagram of a laser strain measuring device.

제4도는 단일 게이지 소자를 위한 스트레인 VS시간의 도면.4 is a plot of strain VS time for a single gauge device.

제5도는 응력제거를 위하여 거의 완전하게 링형으로 용융된 부위의 묘사도.5 is a depiction of the almost completely melted portion of the ring for stress relief.

Claims (5)

잔류응력의 결정을 위하여 목적물의 스트레인 측정을 만드는 준비파괴방법에 있어서 시험되는 목적물의표면에 스트레인 게이지를 부착하고 가늘게 향하는 열원을 가지고 스트렝니 게이지의 바로 근접에서 목적물의 지역적인 용융부위의 응력을 제거하고 부위가 용융하는 동안 응력이완에 의하여 일어나는 스트레인의 변화를 동적으로 측정하고 스트레인 게이지 아래의 열전파에 앞서 측정을 대치하는 온도응력을 가지고 오는 것을 특징으로 하는 방법.In a ready-breaking method of making a strain measurement of a target for determination of residual stress, a strain gauge is attached to the surface of the target to be tested and has a thinly directed heat source to remove local stresses from the local melt at the immediate vicinity of the strain gage. And dynamically measure the change in strain caused by stress relaxation while the site melts and bring the temperature stress to replace the measurement prior to thermal propagation under the strain gauge. 청구 제1항의 방법에서 열원은 촛점 레이저 광선인 것을 특징으로 하는 방법.The method of claim 1 wherein the heat source is a focused laser beam. 청구 제2항의 방법에서 레이저 광선은 1 내지 10밀리초의 펄스길이를 가지는 것을 특징으로 하는 방법.Method according to claim 2, characterized in that the laser beam has a pulse length of 1 to 10 milliseconds. 청구 제2 또는 3항의 방법에서 레이저 광선은 시험되는 목적물의 내부표면에 광선이 향하게 편향되는 것을 특징으로 하는 방법.The method according to claim 2 or 3, characterized in that the laser beam is deflected towards the inner surface of the object to be tested. 청구 제1 내지 4항의 방법에서, 스트레인 게이지는 다소자 로제트 저항스트레인 게이지이고 시험되는 목적물의 표면에 부착되고 레이저의 촛점을 광선을 가지로 로제트 게이지의 중앙에서 목적물의 구멍을 지역적으로 순간적으로 용융하여 응력을 제거하고 각 게이지 소자의 저항을 동적으로 측정하고 물질이 용융하는 동안 스트레인을 변하게 하고 게이지 아래에 열이 전파되기에 앞서 측정을 대치하는 온도응력을 가지고 오는 것을 특징으로 하는 방법.In the method of claims 1 to 4, the strain gauge is more or less a rosette resistance strain gauge and is attached to the surface of the object to be tested and locally melts the hole of the object locally in the center of the rosette gauge with the focus of the laser beam. Removing stress, dynamically measuring the resistance of each gauge element, changing the strain while the material melts, and bringing a temperature stress to replace the measurement before heat spreads under the gauge. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019810000136A 1981-01-19 1981-01-19 Semi-nondestructive residual stress measurement KR840001814B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019810000136A KR840001814B1 (en) 1981-01-19 1981-01-19 Semi-nondestructive residual stress measurement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019810000136A KR840001814B1 (en) 1981-01-19 1981-01-19 Semi-nondestructive residual stress measurement

Publications (2)

Publication Number Publication Date
KR830005560A true KR830005560A (en) 1983-08-20
KR840001814B1 KR840001814B1 (en) 1984-10-20

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Application Number Title Priority Date Filing Date
KR1019810000136A KR840001814B1 (en) 1981-01-19 1981-01-19 Semi-nondestructive residual stress measurement

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KR (1) KR840001814B1 (en)

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KR840001814B1 (en) 1984-10-20

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