KR830004677A - Semiconductor devices - Google Patents

Semiconductor devices Download PDF

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Publication number
KR830004677A
KR830004677A KR1019800004026A KR800004026A KR830004677A KR 830004677 A KR830004677 A KR 830004677A KR 1019800004026 A KR1019800004026 A KR 1019800004026A KR 800004026 A KR800004026 A KR 800004026A KR 830004677 A KR830004677 A KR 830004677A
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KR
South Korea
Prior art keywords
semiconductor devices
layer
nickel
note
disclosure
Prior art date
Application number
KR1019800004026A
Other languages
Korean (ko)
Other versions
KR840001464B1 (en
Inventor
슈조오 이또
Original Assignee
히고 이찌로오
신닛본 덴끼 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 히고 이찌로오, 신닛본 덴끼 가부시기가이샤 filed Critical 히고 이찌로오
Priority to KR1019800004026A priority Critical patent/KR840001464B1/en
Publication of KR830004677A publication Critical patent/KR830004677A/en
Application granted granted Critical
Publication of KR840001464B1 publication Critical patent/KR840001464B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon

Abstract

내용 없음No content

Description

반도체 장치Semiconductor devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 제1도의 반도체장치를 공기중에 장기간 방치한 경우의 단면도. 제3도는 본 발명의 반도체장치의 단면도이다.2 is a cross-sectional view when the semiconductor device of FIG. 1 is left in air for a long time. 3 is a cross-sectional view of the semiconductor device of the present invention.

Claims (1)

실리콘 반도체기판에 크롬층, 니켈층, 니켈의 산화방지층 및 은층을 순차적으로 적층형성한 것을 특징으로 하는 반도체 장치.And a chromium layer, a nickel layer, an anti-oxidation layer of nickel and a silver layer on the silicon semiconductor substrate. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019800004026A 1980-10-17 1980-10-17 Semiconductor device KR840001464B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019800004026A KR840001464B1 (en) 1980-10-17 1980-10-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019800004026A KR840001464B1 (en) 1980-10-17 1980-10-17 Semiconductor device

Publications (2)

Publication Number Publication Date
KR830004677A true KR830004677A (en) 1983-07-16
KR840001464B1 KR840001464B1 (en) 1984-09-27

Family

ID=19218009

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019800004026A KR840001464B1 (en) 1980-10-17 1980-10-17 Semiconductor device

Country Status (1)

Country Link
KR (1) KR840001464B1 (en)

Also Published As

Publication number Publication date
KR840001464B1 (en) 1984-09-27

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