KR830000455A - Gate circuit - Google Patents

Abstract

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Description

Gate circuit

This content is subject to disclosure, so the full text is not included.

1 is a cross-sectional view showing the structure of a semiconductor device used in the present invention;

2 is a cross-sectional view of another embodiment thereof.

Claims (1)

Consisting of a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type in contact with the region, and a third semiconductor region of the first conductivity type in contact therewith, and the first semiconductor region in the first semiconductor region And a potential barrier equal to or greater than the energy of the minority carriers at a position opposite to the junction between the second semiconductor regions and where the distance at the junction is smaller than the diffusion distance of the minority carriers in the first semiconductor region, and the first and second , In a third semiconductor region, a semiconductor device from which first, second, and third electrodes are derived, respectively, is formed, an input signal source and a load are connected to the first and third electrodes, respectively, and a gate is connected to the second electrode. A gate circuit that allows pulses to be supplied. ※ Note: It is disclosed according to the contents of the initial application.