KR810000674B1 - Method of semiconductor device sealing glass - Google Patents

Method of semiconductor device sealing glass Download PDF

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Publication number
KR810000674B1
KR810000674B1 KR7702272A KR770002272A KR810000674B1 KR 810000674 B1 KR810000674 B1 KR 810000674B1 KR 7702272 A KR7702272 A KR 7702272A KR 770002272 A KR770002272 A KR 770002272A KR 810000674 B1 KR810000674 B1 KR 810000674B1
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KR
South Korea
Prior art keywords
semiconductor device
sealing
glass
tube
lead wire
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KR7702272A
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Korean (ko)
Inventor
소오야 다구찌
Original Assignee
히고 이찌로오
신닛뽄덴기 가부시기가이샤
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Priority to KR7702272A priority Critical patent/KR810000674B1/en
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Publication of KR810000674B1 publication Critical patent/KR810000674B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The method for obtaining a semiconductor device which improved defects of a break of glass, poorness of leakage and a burst of the semiconductor elements, is disclosed. After semiconductor element(2) is set between sealing glass(1') of both sides, which are covered by tubular glass(3) and the tubular glass(3) is put into an enclosed chamber. After the tubular glass is melted at a temp. of 650≰C, enclosed chamber is kept by 2 kg/cm2 of atmospheric pressure. Thus, projection part(4) is formed between the sealing glass(1',1'). While the previous temp. is kept, atmospheric pressure of the chamber is changed by 19-2mmHg of atmospheric pressure to return projection parts(4) original state. Thus, sealing is finished by annealing the tubular glass in air.

Description

초자 봉함 반도체장치의 제조방법Method of manufacturing a semiconductor sealed semiconductor device

제1a, b도는 종래의 초자 봉함 반도체장치의 각기 다른 불량형태를 표시한 요부를 확대한 종단면도이고,1A and 1B are longitudinal sectional views showing enlarged main parts showing different types of defects of a conventional ultrafine semiconductor device.

제2도는 종래의 개량된 초자봉함 반도체장치의 종단면도.2 is a longitudinal sectional view of a conventional improved superfine semiconductor device.

제3a, b, c도는 본 발명 제조방법을 설명하기 위한 각 공정을 표시하는 종단면도이다.3A, B, and C are longitudinal cross-sectional views showing respective steps for explaining the production method of the present invention.

본 발명은 리이드선 선단사이에 협착(狹窄)시킨 반도체소자를 초자관으로 위요하여서 봉함하는 초자봉함 반도체장치의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method for manufacturing a superfine semiconductor device in which a semiconductor device, which is squeezed between the lead wire ends, is enclosed by a super magnetic tube and sealed.

종래부터 이러한 종류의 반도체장치에 있어서 제1a도, 1b도에 도시한 바와 같이 리이드선(1)의 초자봉함부(1')선단에 절단할때 생기는 플래쉬(flash) P 혹은 늘어진부분 Q가 있으면 초자관(3)을 봉함한 경우에 이 플래쉬 P 혹은 늘어진부분 Q에 의해서 초자관(3)이 리이드선(1)의 주면에서 들뜨게되어 공간 G가 형성되고 리이드선(1)과 초자관(3)의 봉함이 불충분하게 되어서 리이크(leak)불량으로 되는 결점이 있다.Conventionally, in this kind of semiconductor device, as shown in Figs. 1A and 1B, if there is a flash P or a drooping portion Q which occurs when cutting at the tip of the elementary sealing portion 1 'of the lead wire 1, In the case of sealing the vibrator tube 3, the flash tube P or the drooping part Q causes the vibrator tube 3 to be lifted off the main surface of the lead wire 1, thereby forming a space G, and leading the lead wire 1 and the vitreous tube (3). ) Has the disadvantage of insufficient sealing, resulting in a leak defect.

따라서 본 출원인은 우선 일본실원소 47-2327호(실공소 51-29746)에서 이와같은 결점을 제거시키는 것으로서 가압 분위기 중에서 초자관을 봉함하므로서 제2도에 도시한 바와 같이 초자관의 리이드선 선단간의 공간부에 대응하는 부분에 축경부(縮徑部)(4)를 설치하는 것을 제안하였으나 반도체소자(2)가 항상 리이드선(1)의 선단 중심에 취부된다고는 한정되지 않고 도시한 바와 같이 반도체소자(2)가 편심하여서 취부된 경우에 축경부(4)가 반도체소자(2)에 당접되어서 당접부분의 초자에 왜곡이 생기며 이하의 제조공정에서 받는 불가피한 기계적 또는 열에 의한 쇼크에 의하여 당접부의 초자가 파열되거나 반도체소자(3)가 파열되는 등의 결점이 있었다.Therefore, the present applicant first eliminates such defects in Japanese Chamber No. 47-2327 (Laboratory 51-29746), sealing the vitreous tube in a pressurized atmosphere, and as shown in FIG. Although it is proposed to provide the shaft diameter portion 4 in a portion corresponding to the space portion, the semiconductor element 2 is not always attached to the center of the tip of the lead wire 1 but is shown as semiconductor. When the element 2 is mounted eccentrically, the shaft diameter portion 4 abuts on the semiconductor element 2, causing distortion of the element of the contact portion, and the contact element of the contact portion due to shock caused by unavoidable mechanical or heat received in the following manufacturing process. Was ruptured or the semiconductor element 3 was ruptured.

본 발명은 상기와 같은 결점을 개량, 제거하기 위해서 제안된 것으로 리이크불량은 물론이고 초자 파열 및 반도체소자의 파열이 없는 반도체 장치를 제공하는 것을 목적으로 한다.SUMMARY OF THE INVENTION The present invention has been proposed to improve and eliminate the above-described drawbacks, and an object of the present invention is to provide a semiconductor device that is free of leakage defects as well as breakage of a semiconductor element.

이하 본 발명의 일실시예를 도면을 참조하며 설명하면 먼저 제3a도에 도시한 것처럼 한편의 리이드선(1)의 초자봉지부(1')의 선단에 반도체소자(2)를 고착시키고 다른편에 리이드선(1)을 대향시키며 초자관(3)을 씌워서 적당한 지그(jig)에 의해 유지하면서 기밀용기(도시생략)내에 넣는다. 그리고 난후에 이것을 650℃ 정도의 상표에서 가열해서 유리관(3)을 용융시키고 용융완료후 기밀용기대를 2kg/㎠정도의 가압분위기로 한다. 그러면 제3b도에 도시한 것처럼 초자관(3)의 리이드선 선단간의 공간부에 대응하는 부분에 축경부(4)가 형성된다. 다음에 가열을 속행시킨 상태로 기밀용기내를 19-2mmHg 정도의 감압 분위기로 해서 제3c도에 도시한 것처럼 축경부(4)를 원상태로 복귀시켜 그대로의 상태로 냉각시켜서 봉함을 완료시킨다.Hereinafter, an embodiment of the present invention will be described with reference to the drawings. First, as shown in FIG. 3A, the semiconductor device 2 is fixed to the tip of the element encapsulation portion 1 ′ of the lead wire 1. The lead wires 1 are opposed to each other, and the sheath tube 3 is covered and held in an airtight container (not shown) while being held by a suitable jig. After that, it is heated at a label of about 650 ° C. to melt the glass tube 3, and after completion of melting, the airtight container is set to a pressurized atmosphere of about 2 kg / cm 2. Then, as shown in FIG. 3B, the shaft diameter portion 4 is formed at a portion corresponding to the space portion between the leading end of the lead tube 3. Next, the inside of the hermetic container is kept in a reduced pressure atmosphere of about 19 -2 mmHg in the state where the heating is continued, and as shown in FIG. 3C, the shaft diameter portion 4 is returned to its original state, cooled to the original state, and the sealing is completed.

이러한 방법을 채용하면 가압분위기중에서 봉함에서 리이드선(1) 위에 상기와 같은 플래쉬부 혹은 늘어진 부분이 있어도 초자관의 내외의 압력차에 의해서 용융된 초자관이 리이드선의 주면에 압압되어서 전주면에 걸쳐서 완전히 봉함되며 공간이 형성되지 않게 되어서 리이크불량이 없어지며 또 계속 행하여지는 감압분위기중에서의 봉함에서 축경부(4)를 내외의 압력차에 의해서 원상태로 복귀시킬 수가 있으며, 축경부(4)에 의한 초자파열 혹은 반도체 소자의 파열을 완전히 방지할 수 있고 이러한 종류의 반도체장치의 신뢰성을 향상시킬 수 있다.According to this method, even in the pressurized atmosphere, even if there is such a flashing part or a drooping part on the lead wire 1 in the sealing, the vitrified tube melted by the pressure difference between the inside and the outside of the vitreous tube is pressed on the main surface of the lead wire, The sealing portion 4 is completely sealed and no space is formed so that the leakage defect is eliminated and the sealing portion 4 can be returned to its original state by the pressure difference between inside and outside during sealing in the decompression atmosphere. It is possible to completely prevent the superviolet rupture or the rupture of the semiconductor element due to this, and to improve the reliability of this kind of semiconductor device.

Claims (1)

리이드 선단사이에 협착시킨 반도체소자를 초자관으로 위요하여서 기밀용기내에서 초자관을 리이드선에 용착하게 봉함하는 것에 있어서 상기 기밀용기내를 소정의 압력으로 가열하여 상기 초자관을 용융한후 먼저 가압분위기로하여 초자관을 축경시켜 리이드선에 용착시키고 다음에 감압분위기로하여 축경을 복원시켜서 봉함하는 것을 특징으로 하는 초자봉함 반도체 장치의 제조방법.In sealing the virtue tube to the lead wire in the hermetic container by welding the semiconductor element squeezed between the lead ends in the hermetic container, the inside of the hermetic container is heated to a predetermined pressure to melt the vitreous tube and then pressurize first. A method of manufacturing a super magnetically sealed semiconductor device, characterized in that the diameter of the vitreous tube is reduced and welded to the lead wire in an atmosphere, and then the reduced diameter is restored by sealing under reduced pressure.
KR7702272A 1977-09-24 1977-09-24 Method of semiconductor device sealing glass KR810000674B1 (en)

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KR7702272A KR810000674B1 (en) 1977-09-24 1977-09-24 Method of semiconductor device sealing glass

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KR7702272A KR810000674B1 (en) 1977-09-24 1977-09-24 Method of semiconductor device sealing glass

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KR810000674B1 true KR810000674B1 (en) 1981-06-16

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