KR20240115935A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The substrate processing apparatus 100 processes the substrate W by immersing the substrate W in the stored processing liquid L1, which is the processing liquid L stored in the inner tank 112. The substrate processing apparatus 100 includes a bubble supply unit 130 and a circulation unit 160. The bubble supply unit 130 supplies bubbles KA to the stored treatment liquid L1. The circulation unit 160 generates a first liquid stream R1 of the stored treatment liquid L1 for the bubble supply unit 130 .

Description

Substrate processing apparatus, and substrate processing method {SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD}

The present invention relates to a substrate processing apparatus and a substrate processing method.

It is known that substrates used in electronic components such as semiconductor devices and liquid crystal displays are processed by substrate processing equipment. A substrate processing apparatus processes a substrate by immersing it in a processing liquid in a processing tank (for example, see Patent Document 1).

The substrate processing apparatus of Patent Document 1 includes a bubble generator. A discharge port is formed in the bubble generator. When treating a substrate with an aqueous phosphoric acid solution, the substrate processing apparatus of Patent Document 1 blows a mixed gas into the aqueous phosphoric acid solution from the discharge port of a bubble generator to generate bubbles, thereby aerating and stirring the aqueous phosphoric acid solution.

Japanese Patent Publication No. 2018-56258

However, in the substrate processing apparatus of Patent Document 1, there were cases where the bubbles grew to a certain extent due to the influence of the surface tension of the discharge port and then were supplied into the phosphoric acid aqueous solution. Additionally, there was a desire to reduce bubbles generated in an aqueous phosphoric acid solution. The reason is that the smaller the bubbles, the greater the degree of agitation of the phosphoric acid aqueous solution (treatment solution) near the surface of the substrate due to the bubbles, so that the phosphoric acid aqueous solution in contact with the surface of the substrate can be effectively replaced by a fresh phosphoric acid aqueous solution. .

The purpose of the present invention is to provide a substrate processing apparatus and a substrate processing method that can suppress the growth of bubbles supplied to a processing liquid.

According to the first aspect of the present invention, the substrate processing apparatus processes the substrate by immersing the substrate in a stored processing liquid, which is a processing liquid stored in a reservoir. The substrate processing apparatus includes a bubble supply unit and a liquid flow generating unit. The bubble supply unit supplies bubbles to the stored treatment liquid. The liquid stream generating unit generates a liquid stream of the stored treatment liquid to the bubble supply unit.

In the substrate processing apparatus of the present invention, the bubble supply section has a first pipe section through which gas flows. A bubble discharge port disposed within the stored treatment liquid is formed in the first pipe portion. The bubble discharge port releases bubbles of the gas into the stored treatment liquid. The liquid stream generating unit generates the liquid stream around the bubble discharge port.

In the substrate processing apparatus of the present invention, hydrophobic treatment is performed on the portion of the first pipe portion where the bubble discharge port is formed.

In the substrate processing apparatus of the present invention, the liquid stream generating section has a second pipe section through which the processing liquid flows. A treatment liquid discharge port disposed within the stored treatment liquid is formed in the second pipe portion. The treatment liquid discharge port generates the liquid stream by discharging the treatment liquid flowing through the second pipe into the stored treatment liquid.

In the substrate processing apparatus of the present invention, the processing liquid discharge port is disposed on a side of the bubble discharge port when viewed from above.

In the substrate processing apparatus of the present invention, the processing liquid discharge port is disposed below the bubble discharge port.

In the substrate processing apparatus of the present invention, the bubble discharge port is opened in the horizontal direction.

In the substrate processing apparatus of the present invention, the first pipe portion has an inner surface and an outer surface. The inner surface faces the inside of the first pipe portion. The outer surface faces the outside of the first pipe portion. The bubble discharge port has an outer opening and an inner opening. The outer opening is formed on the outer surface. The inner opening is formed on the inner surface and communicates with the outer opening. The opening area of the outer opening is smaller than that of the inner opening.

According to the second aspect of the present invention, the substrate processing apparatus processes the substrate by immersing the substrate in a stored processing liquid, which is a processing liquid stored in a reservoir. A substrate processing apparatus includes a bubble supply unit and a moving unit. The bubble supply unit supplies bubbles to the stored treatment liquid. The moving part moves the bubble supply part with respect to the storage part.

In the substrate processing apparatus of the present invention, the bubble supply section has a first pipe section through which gas flows. A bubble discharge port disposed within the stored treatment liquid is formed in the first pipe portion. The bubble discharge port releases bubbles of the gas into the stored treatment liquid. The moving part moves the first pipe part with respect to the storage part.

In the substrate processing apparatus of the present invention, the moving part vibrates the first pipe part.

In the substrate processing apparatus of the present invention, the bubble supply part contains polyetheretherketone.

According to the third aspect of the present invention, the substrate processing method processes the substrate by immersing the substrate in a stored processing liquid, which is a processing liquid stored in a reservoir. The substrate processing method includes a step of disposing a bubble discharge port formed in the pipe portion into the stored treatment liquid. The substrate processing method includes a step of flowing gas through the pipe portion. The substrate processing method includes a step of applying a shearing force to shear a ridged portion of the gas that protrudes from the bubble discharge port into the stored treatment liquid from the gas present inside the pipe portion.

According to the substrate processing apparatus and substrate processing method of the present invention, it is possible to suppress the growth of bubbles supplied to the processing liquid.

1 is a schematic diagram of a substrate processing apparatus according to a first embodiment of the present invention.
Fig. 2 is a flowchart showing the substrate processing method of this embodiment.
FIG. 3(a) is a diagram showing the state before the substrate is immersed in the stored processing liquid. (b) is a diagram showing a state in which the substrate is immersed in the stored processing liquid.
Fig. 4 is a view of the piping group viewed from the Z-axis direction.
FIG. 5 is a diagram showing a first example of the positional relationship between the bubble discharge port and the processing liquid discharge port.
Figure 6(a) is a first schematic diagram showing the principle by which bubbles are released from a bubble discharge port. (b) is a second schematic diagram showing the principle by which bubbles are released from the bubble discharge port.
Fig. 7 is a third schematic diagram showing the principle by which bubbles are released from the bubble discharge port.
FIG. 8 is a diagram showing a second example of the positional relationship between the bubble discharge port and the processing liquid discharge port.
FIG. 9 is a diagram showing a third example of the positional relationship between the bubble discharge port and the processing liquid discharge port.
Fig. 10 is a diagram showing a fourth example of the positional relationship between the bubble discharge port and the processing liquid discharge port.
FIG. 11 is a diagram showing a fifth example of the positional relationship between the bubble discharge port and the processing liquid discharge port.
Fig. 12 is a schematic diagram showing an example of a configuration for applying a shear force to the raised portion of the body.
Figure 13(a) is a fourth schematic diagram showing the principle by which bubbles are released from the bubble discharge port. (b) is a fifth schematic diagram showing the principle by which bubbles are released from the bubble discharge port.
Fig. 14 is a diagram showing a first modification of the bubble discharge port.
Fig. 15 is a diagram showing a second modification of the bubble discharge port.
Fig. 16 is a diagram showing a modified example of a gas supply pipe.
Figure 17 is a table showing the comparison results of PEEK, PFA, and PTFE.

Embodiments of the present invention will be described with reference to the drawings. In addition, in the drawings, identical or significant portions are assigned the same reference numerals and descriptions are not repeated. In addition, in this specification, in order to facilitate understanding of the invention, the X-axis, Y-axis, and Z-axis that are orthogonal to each other may be described. Typically, the X and Y axes are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.

[First Embodiment]

With reference to FIG. 1, a substrate processing apparatus 100 according to the first embodiment of the present invention will be described. 1 is a schematic diagram of a substrate processing apparatus 100 according to the first embodiment of the present invention. The substrate processing apparatus 100 processes a plurality of substrates W at once. For example, the substrate processing apparatus 100 etches a plurality of substrates W at a time.

The substrate W is in the shape of a thin plate. Typically, the substrate W is thin and approximately disk-shaped. The substrate (W) is, for example, a semiconductor wafer, a substrate for a liquid crystal display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, and a photomask. It includes substrates for solar cells, ceramic substrates, and solar cells.

The substrate processing apparatus 100 processes the substrate W. The substrate processing apparatus 100 collects and processes a plurality of substrates W using the processing liquid L. At least one of etching, surface treatment, characterization, formation of a treatment film, removal of at least a portion of the film, and cleaning is performed on the substrate W by the treatment liquid L.

The substrate processing apparatus 100 includes a processing tank 110, a substrate holding unit 120, a bubble supply unit 130, and a control unit 140. The treatment tank 110 stores the treatment liquid (L).

The processing tank 110 includes an inner tank 112, an outer tank 114, and a regulation section 112a. The treatment tank 110 has a double tank structure comprised of an inner tank 112 and an outer tank 114. The inner shell 112 and the outer shell 114 each have an opening that opens upward. The inner tank 112 is configured to store the processing liquid L and accommodate a plurality of substrates W. The outer shell 114 is formed outside the opening of the inner shell 112. The height of the upper edge of the outer shell 114 is higher than the height of the upper edge of the inner shell 112.

The inner tank 112 is an example of a storage portion of the present invention. Hereinafter, the treatment liquid (L) stored in the inner tank 112 may be referred to as the stored treatment liquid (L1).

In the inner tank 112, a regulating portion 112a is formed. The regulating portion 112a is formed at both ends of the substrate W in the X direction when processing the substrate W so as to face both main surfaces of a single substrate W. The position of the substrate W is regulated by the regulating portion 112a. For this reason, the substrate W is processed uniformly at a predetermined position.

The treatment tank 110 has a cover 116. The cover 116 can be opened and closed with respect to the opening of the inner tank 112. When the cover 116 is closed, the cover 116 can block the opening of the inner tank 112.

The cover 116 has a door portion 116a and a door portion 116b. The door portion 116a is located on the -X direction side of the opening of the inner tank 112. The door portion 116a is disposed near the upper edge of the inner tank 112 and can be opened and closed with respect to the opening of the inner tank 112. The door portion 116b is located on the +X direction side of the opening of the inner tank 112. The door portion 116b is disposed near the upper edge of the inner tank 112 and can be opened and closed with respect to the opening of the inner tank 112. The door portion 116a and the door portion 116b are closed to cover the opening of the inner tank 112, thereby blocking the inner tank 112 of the treatment tank 110.

A drainage pipe 118a is connected to the bottom wall of the inner tank 112. A valve 118b is disposed in the drainage pipe 118a. The valve 118b is opened and closed by the control unit 140. When the valve 118b is opened, the stored treatment liquid L1 passes through the drainage pipe 118a and is discharged to the outside of the inner tank 112, and is then transferred to a drainage treatment device (not shown) for treatment.

The substrate holding portion 120 holds the substrate W. The substrate holding unit 120 includes a lifter. The substrate holding unit 120 holds a plurality of substrates W at a time and immerses them in the stored processing liquid L1. Additionally, the substrate holding portion 120 may hold only one substrate W and immerse it in the stored processing liquid L1.

The substrate holding portion 120 includes a main body plate 122 and a holding rod 124. The main body plate 122 is a plate extending in the vertical direction (Z direction). The retaining rod 124 extends in the horizontal direction (Y direction) from one main surface of the main body plate 122. In the first embodiment, three retaining rods 124 extend from one main surface of the main body plate 122 in the Y direction. With the plurality of substrates W arranged in the front inward direction of the paper, the lower edge of each substrate W is held in a standing position (vertical posture) by the plurality of retaining rods 124. is maintained.

The substrate holding unit 120 may further include a lifting unit 126. The lifting unit 126 has a processing position (position shown in FIG. 10 ) where the substrate W held by the substrate holding unit 120 is located within the inner tank 112 and a processing position (position shown in FIG. 10 ) held by the substrate holding unit 120. The main body plate 122 is raised and lowered between the retracted positions (not shown) where the substrate W is located above the inner tank 112. Accordingly, when the main body plate 122 is moved to the processing position by the lifting unit 126, the plurality of substrates W held by the holding rod 124 are immersed in the stored processing liquid L1. Thereby, an etching process is performed on the substrate W.

The bubble supply unit 130 supplies bubbles to the stored treatment liquid L1.

The bubble supply unit 130 includes a gas supply pipe 131. The gas supply pipe 131 is a tubular member. The gas supply pipe 131 is formed of, for example, quartz. The gas supply pipe 131 is disposed within the inner tank 112. The gas supply pipe 131 is immersed in the stored treatment liquid L1. Outside the bubble supply unit 130, the stored treatment liquid L1 exists.

Inside the gas supply pipe 131, gas flows. The gas is, for example, an inert gas. Gases include, for example, nitrogen gas. The gas may be air.

A bubble discharge port M is formed in the gas supply pipe 131. The bubble discharge port M is a hole that communicates the inside and outside of the gas supply pipe 131. The bubble discharge port M is disposed in the stored processing liquid L1 by being immersed in the stored processing liquid L1.

The gas flowing inside the gas supply pipe 131 is discharged into the stored treatment liquid L1 through the bubble discharge port M. The gas flowing inside the gas supply pipe 131 becomes bubbles when released from the bubble discharge port M. As a result, bubbles are released from the bubble discharge port M into the stored treatment liquid L1.

The gas supply pipe 131 is an example of the first pipe portion of the present invention.

The air bubbles supplied into the stored processing liquid (L1) from the bubble discharge port (M) rise within the stored processing liquid (L1) and reach the upper surface of the stored processing liquid (L1).

When air bubbles float in the stored processing liquid L1, they contact the surface of the substrate W. In this case, the bubbles move the surface of the substrate W upward while pushing out the portion in contact with the substrate W in the stored processing liquid L1. After the air bubbles pass, the fresh processing liquid L existing around the air bubbles enters the area where the air bubbles were and comes into contact with the surface of the substrate W. Therefore, the processing liquid L around the surface of the substrate W can be agitated by the bubbles, so that the processing liquid L contacting the surface of the substrate W can be replaced with fresh processing liquid L. there is. As a result, the processing speed of the substrate W can be improved.

The control unit 140 is configured using, for example, a microcomputer. The control unit 140 has a processor such as a CPU (Central Processing Unit) and a storage device such as a fixed memory device or a hard disk drive. A program executed by a processor is stored in the memory device. The processor of the control unit 140 controls each element of the substrate processing apparatus 100 by executing a program stored in a storage device.

The processor of the control unit 140 controls the supply of bubbles by the bubble supply unit 130 by controlling the bubble supply unit 130 . The processor of the control unit 140 controls the start and stop of supply of bubbles by the bubble supply unit 130.

The substrate processing apparatus 100 further includes a gas transport unit 150 and a circulation unit 160.

The gas transport unit 150 transports gas inside the gas supply pipe 131.

The gas transport unit 150 includes a pipe 152, a valve 154, and an adjustment valve 156. The valve 154 and the control valve 156 are disposed in the pipe 152. The pipe 152 is connected to the gas supply pipe 131. The pipe 152 guides gas into the gas supply pipe 131. The valve 154 opens and closes the pipe 152. The opening degree of the pipe 152 is adjusted by the adjustment valve 156 to adjust the flow rate of the gas conveyed into the gas supply pipe 131.

The circulation unit 160 generates a liquid stream of the stored processing liquid L1 by circulating the stored processing liquid L1. The circulation unit 160 is an example of the liquid flow generating unit of the present invention.

The circulation unit 160 includes a pipe 161, a pump 162, a filter 163, a heater 164, an adjustment valve 165, a valve 166, and a treatment liquid supply pipe 167. Includes.

The pipe 161 guides the treatment liquid (L) discharged from the outer tank 114 to the inner tank 112. A processing liquid supply pipe 167 is connected to the downstream end of the pipe 161.

The pump 162 transports the processing liquid L from the pipe 161 to the inside of the processing liquid supply pipe 167 . The filter 163 filters the treatment liquid L flowing through the pipe 161. The heater 164 heats the processing liquid L flowing through the pipe 161. The temperature of the processing liquid L is adjusted by the heater 164.

The control valve 165 adjusts the flow rate of the processing liquid L supplied into the processing liquid supply pipe 167 by adjusting the opening degree of the pipe 161. The adjustment valve 165 adjusts the flow rate of the processing liquid L. The adjustment valve 165 includes a valve body (not shown) with a valve seat formed therein, a valve body that opens and closes the valve seat, and an actuator (not shown) that moves the valve body between the open and closed positions. Includes. The same applies to other adjustment valves. The valve 166 opens and closes the pipe 161.

The treatment liquid supply pipe 167 is a tubular member. The treatment liquid supply pipe 167 is disposed within the inner tank 112 of the treatment tank 110. The treatment liquid supply pipe 167 is immersed in the stored treatment liquid L1. Outside the treatment liquid supply pipe 167, stored treatment liquid L1 exists.

A processing liquid discharge port N is formed in the processing liquid supply pipe 167 . The processing liquid discharge port N is a hole that communicates the inside and the outside of the processing liquid supply pipe 167. The processing liquid discharge port N is disposed within the stored processing liquid L1 by being immersed in the stored processing liquid L1.

The processing liquid (L) flowing inside the processing liquid supply pipe 167 is discharged to the outside of the processing liquid supply pipe 167 through the processing liquid discharge port (N). As a result, the processing liquid L flowing inside the processing liquid supply pipe 167 is discharged from the processing liquid discharge port N into the stored processing liquid L1.

The treatment liquid supply pipe 167 is an example of the second pipe portion of the present invention.

Additionally, the control valve 165 may be omitted. In this case, the flow rate of the processing liquid (L) supplied to the processing liquid supply pipe 167 is adjusted by control of the pump 162.

The substrate processing apparatus 100 further includes a processing liquid supply unit 170 and a water supply unit 180.

The processing liquid supply unit 170 further includes a nozzle 172, a pipe 174, and a valve 176. The nozzle 172 discharges the treatment liquid (L) into the inner tank 112. The nozzle 172 is connected to the pipe 174. The processing liquid L from the processing liquid supply source is supplied to the pipe 174. A valve 176 is disposed in the pipe 174.

When the control unit 140 opens the valve 176, the processing liquid (L) discharged from the nozzle 172 is supplied into the inner tank 112. Then, when the treatment liquid L overflows from the upper edge of the inner tank 112, the overflowed treatment liquid L is caught by the outer tank 114 and recovered.

The water supply unit 180 supplies water to the outer tank 114. The water supply unit 180 includes a nozzle 182, a pipe 184, and a valve 186. The nozzle 182 discharges water into the outer tank 114. The nozzle 182 is connected to the pipe 184. The water supplied to the pipe 184 can be any of DIW (deionized water), carbonated water, electrolyzed ion water, hydrogen water, ozone water, and hydrochloric acid water with a dilution concentration (for example, about 10 ppm to 100 ppm). . Water from a water supply source is supplied to the pipe 184. A valve 186 is disposed in the pipe 184. When the control unit 140 opens the valve 186, the water discharged from the nozzle 182 is supplied into the outer tank 114.

For example, the substrate processing apparatus 100 performs an etching treatment of a silicon oxide film (oxide film) and a silicon nitride film (nitride film) on the surface of the pattern formation side of the substrate W made of a silicon substrate. In this etching process, the oxide film and nitride film are selectively removed from the surface of the substrate W. The treatment liquid (L) is, for example, a liquid containing phosphoric acid. Additionally, the treatment liquid (L) may be a liquid containing mixed acids.

Next, with reference to FIGS. 1 to 3(b) , a method of processing the substrate W by the substrate processing apparatus 100 will be described. Fig. 2 is a flowchart showing the processing method for the substrate W of this embodiment. FIG. 3(a) is a diagram showing the state before the substrate W is immersed in the stored processing liquid L1. FIG. 3(b) is a diagram showing a state in which the substrate W is immersed in the stored processing liquid L1.

As shown in FIGS. 1 and 2 , in S101, the circulation unit 160 starts circulation of the processing liquid L. When the control unit 140 opens the valve 166, the processing liquid L flows in that order through the inner tank 112, the outer tank 114, the pipe 161, and the processing liquid supply pipe 167. The processing liquid L supplied from the pipe 161 into the processing liquid supply pipe 167 is discharged into the stored processing liquid L1 through the processing liquid discharge port N. As a result, the treatment liquid L circulates.

2, 3(a), and 3(b), in S102, the lifting unit 126 holds the substrate W by the main body plate 122 and the retaining rod 124. By lowering it, the substrate W is immersed in the stored processing liquid L1.

As shown in FIGS. 1 and 2 , in S103, the bubble supply unit 130 starts the process of supplying bubbles into the stored processing liquid L1. When the control unit 140 opens the valve 154, bubbles are released into the stored treatment liquid L1 from the bubble discharge port M of the gas supply pipe 131.

In S104, the control unit 140 closes the valve 154 to end the bubble supply process by the bubble supply unit 130.

In S105, the lifting unit 126 lifts the substrate W while holding it by the main body plate 122 and the retaining rod 124, thereby lifting the substrate W from within the stored processing liquid L1. . As a result, the processing for the substrate W is completed.

Next, with reference to FIGS. 1 and 4 , the gas supply pipe 131 and the treatment liquid supply pipe 167 will be described.

As shown in FIG. 1 , the substrate processing apparatus 100 includes a pipe group G1. The pipe group G1 is composed of a gas supply pipe 131 and a pair of treatment liquid supply pipes 167. In the first embodiment, a plurality of pipe groups G1 are formed. Specifically, two piping groups G1 are formed. The two piping groups G1 are arranged symmetrically about the virtual center line CL. The virtual center line CL is an virtual line that passes through the center of the inner shell 112 and is parallel to the Z axis.

Fig. 4 is a view of the piping group G1 viewed from the Z-axis direction.

As shown in FIGS. 1 and 4 , the gas supply pipe 131 and the treatment liquid supply pipe 167 are disposed at the bottom 12a of the inner tank 112 (see FIG. 5 ). The gas supply pipe 131 and the processing liquid supply pipe 167 are located below the substrate W immersed in the stored processing liquid L1. Each of the gas supply pipe 131 and the processing liquid supply pipe 167 extends along the Y-axis direction.

In the gas supply pipe 131, a plurality of bubble discharge ports M are formed. A plurality of bubble discharge ports M are arranged along the Y-axis direction. The inner diameter of the gas supply pipe 131 is, for example, about 1 mm or less. The inner diameter of the bubble discharge port M is, for example, about 5 mm or less.

A plurality of processing liquid discharge ports N are formed in the processing liquid supply pipe 167 . A plurality of processing liquid discharge ports N are arranged along the Y-axis direction. The inner diameter of the processing liquid supply pipe 167 is, for example, about 30 mm or less. The inner diameter of the treatment liquid discharge port N is, for example, about 2 mm or less.

In the pipe group G1, the gas supply pipe 131 and a pair of processing liquid supply pipes 167 are arranged in parallel with each other. In the pipe group G1, the gas supply pipe 131 and a pair of treatment liquid supply pipes 167 are aligned along the X-axis direction. In the pipe group G1, a gas supply pipe 131 is disposed between a pair of processing liquid supply pipes 167. A pair of processing liquid supply pipes 167 are arranged with a gas supply pipe 131 sandwiched between them.

Next, with reference to FIGS. 4 and 5 , a first example of the positional relationship between the bubble discharge port M and the processing liquid discharge port N will be described. FIG. 5 is a diagram showing a first example of the positional relationship between the bubble discharge port M and the processing liquid discharge port N.

Hereinafter, the description will focus on the pipe group G11, which is one of the two pipe groups G1. In addition, the explanation will focus on the bubble discharge port M1, which is one of the plurality of bubble discharge ports M, and the processing liquid discharge port N1, which is one of the plurality of processing liquid discharge ports N.

As shown in FIGS. 4 and 5 , in the pipe group G11, a processing liquid discharge port N1 is formed in each pair of processing liquid supply pipes 167 . The processing liquid discharge port N1 is disposed on the side of the processing liquid supply pipe 167 where the bubble discharge port M1 is located.

In the pipe group G11, a bubble discharge port M1 is formed in the gas supply pipe 131. The bubble discharge port M1 is disposed at the upper end of the gas supply pipe 131.

A pair of treatment liquid discharge ports N1 are arranged at intervals from each other. A bubble discharge port (M1) is disposed between the pair of processing liquid discharge ports (N1). When viewed in the Z-axis direction (viewed from above), a bubble discharge port M1 is disposed on the side of the processing liquid discharge port N1.

Each of the pair of processing liquid discharge ports N1 opens toward the first direction D1. The first direction D1 is a direction from the center T1 of the processing liquid supply pipe 167 toward the gas supply pipe 131. In detail, the first direction D1 is a direction from the center T1 of the processing liquid supply pipe 167 toward the bubble discharge port M1 of the gas supply pipe 131. The center T1 of the processing liquid supply pipe 167 is the location of the processing liquid discharge port N1 in the processing liquid supply pipe 167 with respect to the direction in which the processing liquid supply pipe 167 extends (Y-axis direction). It is the center of the cross section of the treatment liquid supply pipe 167 formed when cut in the vertical direction.

Next, with reference to FIGS. 5 to 7 , the principle by which bubbles KA are released from the bubble discharge port M1 of the gas supply pipe 131 will be explained. Fig. 6(a) is a first schematic diagram showing the principle by which bubbles KA are released from the bubble discharge port M1. Fig. 6(b) is a second schematic diagram showing the principle by which bubbles KA are released from the bubble discharge port M1. Fig. 7 is a third schematic diagram showing the principle by which bubbles KA are released from the bubble discharge port M1.

As shown in FIGS. 5 and 6(a), each of the pair of processing liquid discharge ports N1 is open toward the first direction D1, so that the processing liquid L flows in the first direction D1. emits. As a result, the first liquid stream R1 of the stored processing liquid L1 is generated from each of the pair of processing liquid discharge ports N1 toward the first direction D1.

The first liquid stream R1 is generated in the first direction D1, flows toward the bubble discharge port M1, and then flows around the bubble discharge port M1.

As shown in FIGS. 5 and 6(b) , a raised portion KI of the gas K is generated in the stored treatment liquid L1. The raised portion KI is a portion of the gas K supplied to the gas supply pipe 131 that rises from the bubble discharge port M1 into the stored treatment liquid L1. The first liquid stream R1 flows around the raised portion KI. In the first embodiment, the raised portion KI is located between the pair of first liquid streams R1.

The raised portion KI receives the pressure of the first liquid stream R1 flowing around the bubble discharge port M1. As a result, the raised portion KI becomes prone to shearing (separation) from the gas K existing inside the gas supply pipe 131.

The pressure caused by the flow of the first liquid stream R1 is a first example of the shear force of the present invention.

As shown in Figures 5 and 7, when the raised portion KI is sheared, it becomes foam KA. Air bubbles (KA) float within the stored treatment liquid (L1).

As explained above with reference to FIGS. 1 to 7 , the circulation unit 160 discharges the processing liquid L from the processing liquid discharge port N1 of the processing liquid supply pipe 167, thereby forming the bubble supply unit 130. A first liquid stream (R1) of the stored treatment liquid (L1) is generated. Therefore, as shown in FIG. 6(b), the pressure of the first liquid stream R1 can be applied to the growing raised portion KI. As a result, the growing ridge (KI) can be sheared at an early stage, thereby suppressing the enlargement of the air bubble (KA).

Additionally, by shearing the raised portion KI at an early stage, the number of bubbles KA generated per unit time can be increased. As a result, processing of the substrate W can be carried out quickly using a large number of small bubbles KA.

[Second Embodiment]

With reference to FIG. 8, a substrate processing apparatus 100 according to a second embodiment of the present invention will be described. FIG. 8 is a diagram showing a second example of the positional relationship between the bubble discharge port M and the processing liquid discharge port N.

In the second embodiment, the opening direction of the processing liquid discharge port N1 is different from the first embodiment. Below, differences from the first embodiment will mainly be explained. In addition, the explanation will be made by paying attention to the piping group (G11).

As shown in FIG. 8 , the bubble discharge port M1 is disposed on the side of the processing liquid discharge port N1 when viewed in the Z-axis direction.

Each of the pair of processing liquid discharge ports N1 is disposed on the lower end side of the processing liquid supply pipe 167 . Each of the pair of processing liquid discharge ports N1 opens toward the second direction D2. The second direction D2 is from the center T1 of the processing liquid supply pipe 167 toward the bottom 12a of the inner tank 112, and after being reflected from the bottom 12a of the inner tank 112, the gas supply pipe The direction is toward (131).

Since each of the pair of processing liquid discharge ports N1 opens toward the second direction D2, the processing liquid L is discharged in the second direction D2. As a result, a second liquid stream R2 of the stored processing liquid L1 is generated from each of the pair of processing liquid discharge ports N1 toward the second direction D2.

The second liquid stream R2 is generated in the second direction D2, toward the bottom 12a of the inner tank 112, and after being reflected from the bottom 12a of the inner tank 112, flows into the gas supply pipe ( 131). The second liquid stream R2 that reaches the gas supply pipe 131 flows along the outer circumference of the gas supply pipe 131. Then, the second liquid stream R2 flows around the bubble discharge port M1 and then passes through the gas supply pipe 131.

The second liquid stream R2 flowing around the bubble discharge port M1 exerts a pressure due to the flow of the second liquid stream R2 with respect to the raised portion KI of the gas K (see Fig. 6(b)). Grants. Accordingly, the growing ridge portion KI can be sheared at an early stage by the pressure of the second liquid stream R2. As a result, the enlargement of air bubbles KA can be suppressed.

The pressure caused by the flow of the second liquid stream R2 is a second example of the shear force of the present invention.

[Third Embodiment]

With reference to FIG. 9, a substrate processing apparatus 100 according to a third embodiment of the present invention will be described. FIG. 9 is a diagram showing a third example of the positional relationship between the bubble discharge port M and the processing liquid discharge port N.

In the third embodiment, the position of the processing liquid supply pipe 167 relative to the gas supply pipe 131 is different from the first embodiment. Below, differences from the first embodiment will mainly be explained. In addition, the explanation will be made by paying attention to the piping group (G11).

As shown in FIG. 9 , in the third embodiment, the pipe group G1 is composed of one gas supply pipe 131 and one processing liquid supply pipe 167. The processing liquid supply pipe 167 is disposed below the gas supply pipe 131.

The processing liquid discharge port N1 is disposed below the bubble discharge port M1. The processing liquid discharge port N1 is disposed on the upper end side of the processing liquid supply pipe 167 . The processing liquid discharge port N1 opens toward the third direction D3. The third direction D3 is a direction from the center T1 of the processing liquid supply pipe 167 toward the gas supply pipe 131. In the third embodiment, the third direction D3 is upward.

Since the processing liquid discharge port N1 opens toward the third direction D3, the processing liquid L is discharged in the third direction D3. As a result, the third liquid stream R3 of the stored processing liquid L1 is generated so as to face the third direction D3 from the processing liquid discharge port N1.

The third liquid stream R3 is generated toward the third direction D3 and thus toward the gas supply pipe 131. The third liquid stream R3 that reaches the gas supply pipe 131 flows along the outer circumference of the gas supply pipe 131. Then, the third liquid stream R3 flows around the bubble discharge port M1 and then passes through the gas supply pipe 131. Additionally, the third liquid stream R3 is separated when it reaches the gas supply pipe 131 to form a pair of third liquid streams R3, and the pair of third liquid streams R3 is separated from the gas supply pipe 131. It flows along the outer circumference of the gas supply pipe (131).

The third liquid stream R3 flowing around the bubble discharge port M1 exerts pressure due to the flow of the third liquid stream R3 with respect to the raised portion KI of the gas K (see Fig. 6(b)). Grants. Accordingly, the growing ridge portion KI can be sheared at an early stage by the pressure of the third liquid stream R3. As a result, the enlargement of air bubbles KA can be suppressed.

The pressure caused by the flow of the third liquid stream R3 is a third example of the shear force of the present invention.

[Fourth Embodiment]

With reference to FIG. 10 , a substrate processing apparatus 100 according to a fourth embodiment of the present invention will be described. FIG. 10 is a diagram showing a fourth example of the positional relationship between the bubble discharge port M and the processing liquid discharge port N.

In the fourth embodiment, the position of the processing liquid supply pipe 167 relative to the gas supply pipe 131 is different from the first embodiment. Below, differences from the first embodiment will mainly be explained. In addition, the explanation will be made by paying attention to the piping group (G11).

As shown in FIG. 10 , a pair of processing liquid supply pipes 167 are arranged below the gas supply pipe 131 at intervals from each other.

When viewed in the Z-axis direction, a bubble discharge port M1 is disposed on a side of the processing liquid discharge port N1.

Each of the pair of processing liquid discharge ports N1 is disposed on the upper end side of the processing liquid supply pipe 167 . The processing liquid discharge port N1 opens toward the fourth direction D4. The fourth direction D4 is a direction from the center T1 of the processing liquid supply pipe 167 toward the gas supply pipe 131. In the fourth embodiment, the fourth direction D4 is diagonally upward.

Since each of the pair of processing liquid discharge ports N1 opens toward the fourth direction D4, the processing liquid L is discharged in the fourth direction D4. As a result, the fourth liquid stream R4 of the stored processing liquid L1 is generated from each of the pair of processing liquid discharge ports N1 toward the fourth direction D4.

The fourth liquid stream R4 is generated toward the fourth direction D4 and thus toward the gas supply pipe 131. The fourth liquid stream R4 that reaches the gas supply pipe 131 flows along the outer circumference of the gas supply pipe 131. Then, the fourth liquid stream R4 flows around the bubble discharge port M1 and then passes through the gas supply pipe 131.

The fourth liquid stream R4 flowing around the bubble discharge port M1 exerts pressure on the raised portion KI of the gas K (see Fig. 6(b)) due to the flow of the fourth liquid stream R4. Grants. Accordingly, the growing ridge portion KI can be sheared at an early stage by the pressure of the fourth liquid stream R4. As a result, the enlargement of air bubbles KA can be suppressed.

The pressure caused by the flow of the fourth liquid stream R4 is a fourth example of the shear force of the present invention.

[Fifth Embodiment]

With reference to FIG. 11 , a substrate processing apparatus 100 according to a fifth embodiment of the present invention will be described. FIG. 11 is a diagram showing a fifth example of the positional relationship between the bubble discharge port M and the processing liquid discharge port N.

The fifth embodiment differs from the first embodiment in that the processing liquid L is discharged in multiple directions from the processing liquid supply pipe 167. Below, differences from the first embodiment will mainly be explained. In addition, the explanation will be made by paying attention to the piping group (G11).

As shown in FIG. 11, a plurality of processing liquid discharge ports N are formed in each of the pair of processing liquid supply pipes 167. In the third embodiment, three processing liquid discharge ports N are formed in each of the pair of processing liquid supply pipes 167. The three processing liquid discharge ports (N) are composed of a processing liquid discharge port (N1), a processing liquid discharge port (N2), and a processing liquid discharge port (N3).

The processing liquid discharge port N1 corresponds to the processing liquid discharge port N1 shown in FIG. 5 and is open toward the first direction D1. As a result, the first liquid stream (R1) is generated through the processing liquid discharge port (N1), thereby achieving the same effect as in the first embodiment.

The processing liquid discharge port (N2) is opened toward a sixth direction (D6) different from the first direction (D1), so that the stored processing liquid ( Creates a liquid flow of L1). The processing liquid discharge port N3 is opened toward the seventh direction D7, which is different from the first direction D1 and the sixth direction D6, so that the processing liquid discharge port N3 is opened in the seventh direction D7. A liquid stream of the stored treatment liquid (L1) is generated to face . The seventh direction D7 is a direction symmetrical to the first direction D1 with the sixth direction D6 as the center. By generating a liquid stream of the stored treatment liquid (L1) in addition to the first liquid stream (R1), the stored treatment liquid (L1) can be effectively stirred.

[Sixth Embodiment]

12 to 13(b), a substrate processing apparatus 100 according to a sixth embodiment of the present invention will be described. FIG. 12 is a schematic diagram showing an example of a configuration for applying a shear force to the raised portion KI of the body K.

The sixth embodiment is different from the first embodiment in that a shear force is applied to the raised portion KI of the base body K by moving the bubble discharge port M without using the liquid flow of the storage treatment liquid L1. Different. Below, differences from the first embodiment will mainly be explained.

As shown in FIG. 12 , the substrate processing apparatus 100 further includes a moving unit 190 .

The moving unit 190 moves the gas supply pipe 131 with respect to the inner tank 112 (see FIG. 1). The moving unit 190 includes, for example, a motor. The moving unit 190 vibrates the gas supply pipe 131, for example. The moving unit 190 is controlled by the control unit 140.

Next, with reference to FIGS. 12 to 13(b) , the principle by which bubbles KA are released from the bubble discharge port M1 of the gas supply pipe 131 will be explained. Fig. 13(a) is a fourth schematic diagram showing the principle by which bubbles KA are released from the bubble discharge port M1. Fig. 13(b) is a fifth schematic diagram showing the principle by which bubbles KA are released from the bubble discharge port M1.

As shown in Fig. 12 and Fig. 13(a), when the moving part 190 vibrates the gas supply pipe 131, the raised portion KI of the base K vibrates. As a result, the raised portion KI becomes prone to shearing from the gas K present inside the gas supply pipe 131.

The vibration applied to the gas supply pipe 131 is a fifth example of the shear force of the present invention.

As shown in Fig. 12 and Fig. 13(b), when the raised portion KI is sheared, it becomes foam KA. Air bubbles (KA) float within the stored treatment liquid (L1).

As described above with reference to FIGS. 12 to 13(b), the moving unit 190 vibrates the gas supply pipe 131. Therefore, vibration can be applied to the growing ridge (KI). As a result, the growing ridge (KI) can be sheared at an early stage, thereby suppressing the enlargement of the air bubble (KA).

Additionally, the moving unit 190 may vibrate the gas supply pipe 131 by applying ultrasonic waves to the gas supply pipe 131.

Additionally, the moving unit 190 may move the gas supply pipe 131 in parallel. When the gas supply pipe 131 moves in parallel, the raised portion KI protrudes from the gas supply pipe 131 into the storage liquid L1, so that the storage treatment is performed in the direction opposite to the moving direction of the gas supply pipe 131. It receives pressure from liquid (L1). As a result, the growing raised portion KI can be sheared at an early stage by the pressure from the stored treatment liquid L1, and thus the enlargement of the bubbles KA can be suppressed.

When the gas supply pipe 131 moves in parallel, the pressure that the raised portion KI receives from the stored treatment liquid L1 is a sixth example of the shear force of the present invention. Additionally, the direction in which the gas supply pipe 131 is moved in parallel is not particularly limited.

Additionally, the moving unit 190 may rotate the gas supply pipe 131 around the axis of the gas supply pipe 131. When the gas supply pipe 131 rotates, the raised portion KI protrudes from the gas supply pipe 131 into the storage treatment liquid L1, so that the storage treatment is performed in a direction opposite to the rotation direction of the gas supply pipe 131. It receives pressure from liquid (L1). As a result, the growing raised portion KI can be sheared at an early stage by the pressure from the stored treatment liquid L1, and thus the enlargement of the bubbles KA can be suppressed.

When the gas supply pipe 131 rotates, the pressure that the raised portion KI receives from the stored treatment liquid L1 is a seventh example of the shear force of the present invention.

Above, embodiments of the present invention have been described with reference to the drawings (FIGS. 1 to 13(b)). However, the present invention is not limited to the above-described embodiments, and can be implemented in various aspects without departing from the gist (for example, (1) to (5)). Additionally, various inventions can be formed by appropriately combining a plurality of components disclosed in the above embodiments. For example, several components may be deleted from all components shown in the embodiment. For ease of understanding, the drawings schematically represent each component as the main component, and the number of each component shown may differ from the actual drawing due to the circumstances of drawing preparation. In addition, each component shown in the above embodiment is an example and is not particularly limited, and various changes are possible without substantially departing from the effect of the present invention.

(1) In the first to fifth embodiments, the control unit 140 adjusts the opening degree of the pipe 161 using the adjustment valve 165 to control the first liquid flow ( The magnitude of each pressure of R1) to fourth liquid stream (R4) is controlled.

The control unit 140 may keep the magnitude of each pressure of the first to fourth liquid streams R1 to R4 constant by making the opening degree of the pipe 161 constant. Additionally, the control unit 140 may periodically change the magnitude of each pressure of the first liquid stream R1 to the fourth liquid stream R4 by changing the opening degree of the pipe 161 at predetermined time intervals. That is, the control unit 140 may increase or decrease the magnitude of each pressure of the first liquid stream R1 to the fourth liquid stream R4.

(2) In the first to sixth embodiments, the portion of the gas supply pipe 131 (see FIG. 4) where the bubble discharge port M is formed is subjected to hydrophobic treatment by, for example, fluorine coating. It's okay. As a result, the foaming of the air bubbles KA can be improved, and thus the enlargement of the air bubbles KA can be effectively suppressed. In addition, the hydrophobic treatment may be performed not only on the portion of the gas supply pipe 131 where the bubble discharge port M is formed, but also on the entire gas supply pipe 131.

(3) In the first to sixth embodiments, the bubble discharge port M is opened upward. However, the present invention is not limited to this.

With reference to Fig. 14, a first modification of the bubble discharge port M will be described. Fig. 14 is a diagram showing a first modification of the bubble discharge port M.

As shown in FIG. 14, in the first modification, the bubble discharge port M is opened in the horizontal direction. The horizontal direction is a direction parallel to the horizontal direction (X-axis direction). Therefore, when the raised portion KI of the gas K is about to rise from the bubble discharge port M, it contacts the upper end of the bubble discharge port M, so that the raised portion (KI) is raised by the upper end of the bubble discharge port M. KI) can be effectively sheared. As a result, the enlargement of air bubbles KA can be suppressed.

(4) With reference to Fig. 15, a second modification of the bubble discharge port M will be described. Fig. 15 is a diagram showing a second modification of the bubble discharge port M.

As shown in FIG. 15, in the second modification, the opening area of the bubble discharge port M becomes smaller as it goes toward the outside of the gas supply pipe 131. Below, the second modification of the bubble discharge port M will be described in detail.

The gas supply pipe 131 has an inner surface 131b and an outer surface 131c. The inner surface (131b) faces the inner surface (131a) of the gas supply pipe (131). The outer surface 131c faces the inside of the gas supply pipe 131.

The bubble discharge port M has an outer opening Ma and an inner opening Mb. The outer opening Ma is formed on the outer surface 131c. The inner opening Mb is formed on the inner surface 131b. The inner opening (Mb) communicates with the outer opening (Ma).

The opening area (V1) of the outer opening (Ma) is smaller than the opening area (V2) of the inner opening (Mb) (V1 < V2). As a result, the opening area of the bubble discharge port M decreases as it moves from the inner opening Mb toward the outer opening Ma, and thus the enlargement of the bubbles KA can be effectively suppressed. The opening area is the area of the cross section of the bubble discharge port M perpendicular to the direction from the inner opening Mb to the outer opening Ma.

Additionally, the opening area of the bubble discharge port M may gradually become smaller as it moves from the inner opening Mb toward the outer opening Ma. Additionally, the opening area of the bubble discharge port M may gradually become smaller as it moves from the inner opening Mb toward the outer opening Ma.

(5) With reference to FIG. 16, a modified example of the gas supply pipe 131 will be described. FIG. 16 is a diagram showing a modified example of the gas supply pipe 131.

A modified example of the gas supply pipe 131 shown in FIG. 16 has a double pipe structure. Below, a modified example of the gas supply pipe 131 will be described in detail.

The gas supply pipe 131 has an outer pipe 131d and an inner pipe 131e. Each of the outer pipe 131d and the inner pipe 131e is a tubular member. The outer diameter of the outer pipe 131d is larger than the outer diameter of the inner pipe 131e. Inside the outer pipe 131d, the inner pipe 131e is disposed. Gas K flows inside 131f of the inner pipe 131e.

The bubble discharge port M has a first opening MA and a second opening MB. The first opening MA is formed in the outer pipe 131d and communicates the inside and the outside of the outer pipe 131d. The second opening MB is formed in the inner pipe 131e and communicates the inside 131f and the outside of the inside pipe 131e. The first opening MA and the second opening MB are opened in the same direction. The opening area V3 of the first opening MA is substantially equal to the opening area V4 of the second opening MB (V3 ≒ V4). As a result, double pressure can be applied to the ridge KI (see FIG. 6(b)) by the first opening MA and the second opening MB, thereby suppressing the growth of the ridge KI. can do. Additionally, the opening area V3 of the first opening MA may be smaller than the opening area V4 of the second opening MB (V3 < V4).

(6) In the first to sixth embodiments, the gas supply pipe 131, which is the bubble supply part 130, contains quartz. However, the present invention is not limited to this. In the first to sixth embodiments, the gas supply pipe 131 may contain PEEK (polyetheretherketone). That is, in the first to sixth embodiments, the gas supply pipe 131 made of PEEK may be used.

Below, with reference to FIGS. 1, 4, and 17, the reason why the gas supply pipe 131 made of PEEK is used in the substrate processing apparatus 100 will be explained.

1 and 4 , when the substrate W is processed by the substrate processing apparatus 100, the gas supply pipe 131 is filled with a high temperature (for example, about 160° C.) processing liquid ( L) (phosphoric acid aqueous solution) is immersed (see Figure 1). However, when the gas supply pipe 131 is formed of quartz and the gas supply pipe 131 is used for a long period of time (for example, half a year to one year), the gas supply pipe 131 may be exposed to the high temperature treatment liquid L for a long period of time. By being immersed, the diameter of the bubble discharge port M may be enlarged. In this case, among the plurality of bubble discharge ports M, the bubbles KA are released from the bubble discharge port M with an enlarged diameter, resulting in a deviation in the release of the bubbles KA from the plurality of bubble discharge ports M. There is a possibility that the processing ability of the substrate W by the substrate processing apparatus 100 may decrease. Therefore, the gas supply pipe 131 made of quartz was replaced every six months to one year.

In order to suppress the expansion of the diameter of the bubble discharge port M and increase the exchange life of the gas supply pipe 131, the present inventors used quartz as a material for the gas supply pipe 131 by immersion in the treatment liquid L rather than quartz. It was decided to use a resin that can endure for a long period of time. In addition, the inventor of the present application selected PEEK, PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer), and PTFE (polytetrafluoroethylene) as resins used as materials for the gas supply pipe 131. heard. Then, the present inventor verified which resin among PEEK, PFA, and PTFE was most suitable as a material for the gas supply pipe 131.

Additionally, in the gas supply pipe 131 used in the verification, the inner diameter of the bubble discharge port M is 0.2 mm. Additionally, the outer diameter of the gas supply pipe 131 used in the verification is 8 mm, and the inner diameter is 4 mm. Additionally, the length of the gas supply pipe 131 used in the verification is 400 mm. In addition, the dimensions of the gas supply pipe 131 are not limited to these. For example, the outer diameter of the gas supply pipe 131 may be 6 mm or more and 12 mm or less, and the inner diameter may be 2 mm or more and 10 mm or less.

Additionally, in the processing liquid supply pipe 167, the inner diameter of the processing liquid discharge port N is, for example, 1 mm. The processing liquid (L), not the bubbles (KA), is discharged from the processing liquid discharge port (N). Accordingly, the processing liquid supply pipe 167 does not experience problems caused by deviation of the bubbles KA like the gas supply pipe 131, and therefore the replacement life (about several years) of the processing liquid supply pipe 167 is that of the gas supply pipe ( 131) is longer than the replacement life (about half a year to one year). Therefore, since the gas supply pipe 131 is replaced more frequently than the treatment liquid supply pipe 167, the present inventor made it a task to increase the replacement life of the gas supply pipe 131. And, in order to solve the problem, the present inventor studied the material of the gas supply pipe 131.

Below, with reference to FIG. 17, the comparison results of PEEK, PFA, and PTFE will be described. Figure 17 is a table (H) showing the results of comparison between PEEK, PFA, and PTFE. In addition, in table (H) of FIG. 17, information on quartz is also described for reference.

As shown in Table (H) of FIG. 17, PEEK, PFA, and PTFE have approximately the same heat resistance temperature. Therefore, with respect to heat resistance temperature, there is no difference between the various gas supply pipes (the gas supply pipe 131 made of PEEK, the gas supply pipe 131 made of PFA, and the gas supply pipe 131 made of PTFE).

As shown in Table (H), with respect to the coefficient of linear expansion, PEEK has the lowest coefficient of linear expansion among various resin materials (PEEK, PFA, and PTFE). Therefore, among various gas supply pipes, the gas supply pipe 131 made of PEEK is advantageous in that it is least likely to thermally expand and therefore is least likely to cause misalignment due to thermal expansion within the inner tank 112.

As shown in Table (H), regarding hardness, PEEK is the hardest among various resin materials. Therefore, among various gas supply pipes, the gas supply pipe 131 made of PEEK is advantageous in that it is least likely to be deformed even when pressure is applied from the outside.

As shown in Table (H), PEEK has the highest heat distortion temperature among various resin materials. Therefore, among various gas supply pipes, the gas supply pipe 131 made of PEEK is advantageous in that it is least susceptible to thermal deformation.

In addition, Table (H) describes information on thermal deformation of PEEK by heating to 152°C under a pressure of 1.8 MPa. However, when processing of the substrate W by the substrate processing apparatus 100 is performed, a processing liquid L of about 160° C. is used, but a high pressure such as 1.8 MPa is applied to the gas supply pipe 131. There is usually no such case. As a result, when processing the substrate W by the substrate processing apparatus 100, thermal deformation of the gas supply pipe 131 made of PEEK is suppressed even if a processing liquid L of about 160° C. is used. .

In addition, the present inventor discovered that the debubbling of the bubbles KA discharged from the bubble discharge port M is affected by the wettability (contact angle) of the surface of the gas supply pipe 131. Specifically, the inventors of the present application found that the smaller the wettability of the surface of the gas supply pipe 131 (the larger the contact angle), the better the bubble removal of the air bubbles KA, and the better the bubble KA removal of small bubbles KA from the bubble discharge port M. ) was discovered to be able to emit. In addition, the inventor of the present application found that among various gas supply pipes, the wettability of the surface of the gas supply pipe 131 made of PEEK was the lowest, so that small bubbles KA were released from the bubble discharge port M of the gas supply pipe 131 made of PEEK. It was discovered that it can be released effectively.

The inventor of the present application comprehensively judged the above-described linear expansion coefficient viewpoint, hardness viewpoint, heat distortion temperature viewpoint, and wettability viewpoint, and found that among various gas supply pipes, it is most advantageous to use the gas supply pipe 131 made of PEEK. confirmed. As a result, in the substrate processing apparatus 100, a gas supply pipe 131 made of PEEK is used.

As described above, in the substrate processing apparatus 100, by using the gas supply pipe 131 made of PEEK, durability of the gas supply pipe 131 with respect to the processing liquid L can be improved, and the gas supply pipe 131 The exchange life of can be increased.

Industrial applicability

The present invention can be used in the fields of substrate processing equipment and substrate processing methods.

100: Substrate processing device
112: Inner tank (reservoir)
130: bubble supply unit
160: circulation unit (liquid flow generation unit)
KA: air bubbles
L: Treatment liquid
L1: Retained treatment liquid
R1: First liquid stream (liquid flow)
R2: Second liquid stream (liquid flow)
R3: Third liquid stream (liquid stream)
R4: 4th liquid stream (liquid stream)
W: substrate

Claims (9)

A substrate processing device that processes a substrate by immersing the substrate in a processing liquid stored in a reservoir, comprising:
A bubble supply part containing polyetheretherketone, which has a first pipe part through which gas flows, and supplies bubbles to the stored treatment liquid from a bubble discharge port formed in the first pipe part;
A shearing force for generating a liquid flow of the stored treatment liquid around the bubble discharge port and shearing a ridged portion of the gas flowing through the first pipe portion that rises from the bubble discharge port into the stored treatment liquid from the gas. A substrate processing device comprising a liquid flow generating unit that provides a liquid flow. According to claim 1,
The bubble discharge port opens upward,
A substrate processing apparatus, wherein the liquid stream generating unit generates a pair of liquid streams flowing across the bubble discharge port. The method of claim 1 or 2,
A substrate processing device, wherein a portion of the first pipe portion where the bubble discharge port is formed is subjected to hydrophobic treatment. The method of claim 1 or 2,
The liquid flow generating section has a second pipe section through which the treatment liquid flows,
A treatment liquid discharge port disposed within the stored treatment liquid is formed in the second pipe portion,
The substrate processing apparatus wherein the processing liquid discharge port generates the liquid stream by discharging the processing liquid flowing through the second pipe portion into the stored processing liquid. According to claim 4,
A substrate processing apparatus, wherein the processing liquid discharge port is disposed on a side of the bubble discharge port when viewed from above. According to claim 4,
The substrate processing apparatus, wherein the processing liquid discharge port is disposed below the bubble discharge port. The method of claim 1 or 2,
A substrate processing device, wherein the bubble discharge port is opened in a horizontal direction. The method of claim 1 or 2,
The first department said,
An inner surface facing the inside of the first pipe portion,
It has an outer surface facing the outside of the first crown portion,
The bubble discharge port is,
an outer opening formed on the outer surface,
It has an inner opening formed on the inner surface and communicating with the outer opening,
A substrate processing apparatus, wherein an opening area of the outer opening is smaller than an opening area of the inner opening. A substrate processing method in which the substrate is treated by immersing the substrate in a processing liquid stored in a reservoir, comprising:
A step of arranging a bubble discharge port formed in a pipe portion containing polyetheretherketone into the stored treatment liquid;
A process of flowing gas through the pipe section,
A substrate processing method comprising a step of applying a shearing force to shear a ridged portion of the gas that rises from the bubble discharge port into the stored treatment liquid from the gas present inside the pipe portion.