KR20240110134A - Display device - Google Patents

Abstract

A display device according to an embodiment of the present specification includes a substrate including a first non-bending area including a display area, a bending area extending from the first non-bending area, and a second non-bending area extending from the bending area. A plurality of organic light emitting elements disposed in the display area, a touch sensor unit disposed on the plurality of organic light emitting elements in the display area, a pad disposed in the second non-bending area, and a plurality of touches electrically connecting the pad and the touch sensor unit. It includes a link wire and a low-potential power link wire adjacent to the plurality of touch link wires, wherein the low-potential power link wire is formed to overlap the first wiring portion and the plurality of touch link wires disposed on one side of the plurality of touch link wires. 1 Includes an extension part extending from the wiring part.

Description

Display device {DISPLAY DEVICE}

This specification relates to a display device, and more specifically, to a display device that is robust to bonding pressure and can reduce resistance to a low-potential power source.

Currently, as we enter the full-fledged information age, the field of display devices that visually display electrical information signals is developing rapidly, and research is continuing to develop performance such as thinner, lighter, and lower power consumption for various display devices.

Representative display devices include Liquid Crystal Display device (LCD), Field Emission Display device (FED), Electro-Wetting Display device (EWD), and Organic Light Emitting Display device (Organic Light Emitting Display). Light Emitting Display Device (OLED), etc.

In order to provide more diverse functions to the user, the display device can recognize the user's touch on the display panel and perform input processing based on the recognized touch. As an example, a plurality of touch electrodes may be disposed in the active area of the display panel. Additionally, the display device can sense a touch by detecting a change in the capacitance of the touch electrode that occurs due to the user's touch.

The problem that this specification aims to solve is to provide a display device that is robust against pressure applied during pad bonding.

Another problem that this specification aims to solve is to provide a display device that is robust against pressure applied during bonding and can also reduce resistance to low-potential power.

The tasks of this specification are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the description below.

In order to solve the above-described problem, a display device according to an embodiment of the present specification includes a first non-bending area including a display area, a bending area extending from the first non-bending area, and a second extending from the bending area. A substrate including a non-bending area, a plurality of organic light-emitting elements disposed in a display area on the substrate, a touch sensor unit disposed on the plurality of organic light-emitting elements in the display area, a pad disposed in the second non-bending area, and a pad and a touch It includes a plurality of touch link wires electrically connecting the sensor unit and a low-potential power link wire adjacent to the plurality of touch link wires, wherein the low-potential power link wire includes a first wiring portion disposed on one side of the plurality of touch link wires, and It includes an extension part extending from the first wiring part to overlap a plurality of touch link wires.

Specific details of other embodiments are included in the detailed description and drawings.

This specification can prevent cracks from occurring by having a structure that is robust against the pressure applied during pad bonding.

This specification provides a display device that is robust against pressure applied during bonding and can secure the area of the low-potential power link wiring, thereby reducing resistance to low-potential power.

The effects according to the present specification are not limited to the contents exemplified above, and further various effects are included within the present specification.

1 is a plan view of a display device according to an embodiment of the present specification.
Figure 2 is a plan view showing a touch sensor unit disposed in the display area of a display device according to an embodiment of the present specification.
FIG. 3 is a cross-sectional view showing one sub-pixel (SP) disposed in the display area of a display device according to an embodiment of the present specification.
Figure 4 is a plan view showing area X in Figure 1.
FIG. 5 is a cross-sectional view taken along line VI-VI' in FIG. 4.
FIG. 6 is a cross-sectional view taken along line VII-VII' of FIG. 4.
Figure 7 is a schematic diagram schematically showing the connection relationship between the touch link wire and the low-potential power link wire.

The advantages and features of the present specification and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present specification is not limited to the embodiments disclosed below and will be implemented in various different forms, but the present embodiments only serve to ensure that the disclosure of the present specification is complete and are within the scope of common knowledge in the technical field to which the present specification pertains. It is provided to fully inform those who have the scope of the specification.

The shape, area, ratio, angle, number, etc. disclosed in the drawings for explaining the embodiments of the present specification are illustrative, and the present specification is not limited to the matters shown. Like reference numerals refer to like elements throughout the specification. Additionally, in describing the present specification, if it is determined that a detailed description of related known technologies may unnecessarily obscure the gist of the present specification, the detailed description will be omitted. When 'includes', 'has', 'consists of', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. In cases where a component is expressed in the singular, the plural is included unless specifically stated otherwise.

When interpreting a component, it is interpreted to include the margin of error even if there is no separate explicit description.

In the case of a description of a positional relationship, for example, if the positional relationship of two parts is described as 'on top', 'on the top', 'on the bottom', 'next to', etc., 'immediately' Alternatively, there may be one or more other parts placed between the two parts, unless 'directly' is used.

When an element or layer is referred to as “on” another element or layer, it includes all cases where the other layer or other element is interposed or directly on top of the other element.

Additionally, first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are merely used to distinguish one component from another. Accordingly, the first component mentioned below may also be the second component within the technical idea of the present specification.

Like reference numerals refer to like elements throughout the specification.

The area and thickness of each component shown in the drawings are shown for convenience of explanation, and the present specification is not necessarily limited to the area and thickness of the components shown.

Each feature of the various embodiments of the present specification can be combined or combined with each other, partially or entirely, and various technological interconnections and operations are possible, and each embodiment may be implemented independently of each other or together in a related relationship. It may be possible.

Hereinafter, various embodiments of the present specification will be described in detail with reference to the attached drawings.

1 is a plan view of a display device according to an embodiment of the present specification.

FIG. 1 shows, for example, a state in which the substrate 110 of the display device 100 according to an embodiment of the present specification is not bent.

For convenience of explanation, only the substrate 110, driving integrated circuit (D-IC), circuit element (PCB), and pad (PAD) among the various components of the display device 100 are shown in FIG. 1 .

The substrate 110 is configured to support various components included in the display device 100 and may be made of an insulating material. The substrate 110 may be made of a flexible material that can be bent. The substrate 110 may be made of a transparent insulating material. For example, the substrate 110 may be formed of a plastic material such as polyimide (PI).

On the substrate 110, a plurality of gate wires and a plurality of data wires are arranged to cross each other. A plurality of sub-pixels (SP) are defined at intersection points of a plurality of gate wires and data wires. The area where a plurality of sub-pixels (SP) that implement an image are placed can be expressed as a display area (AA), and the area that is placed outside the display area (AA) and where the plurality of sub-pixels (SP) are not placed can be expressed as a display area (AA). It can be expressed as a display area (NA).

A display unit for displaying an image and a circuit unit for driving the display unit may be formed in the display area AA. For example, when the display device 100 is an organic light emitting display device, the display unit may include an organic light emitting element. That is, the display unit may include an anode, an organic light-emitting layer on the anode, and a cathode on the organic light-emitting layer. The organic light-emitting layer may be composed of, for example, a hole transport layer, a hole injection layer, an organic light-emitting layer, an electron injection layer, and an electron transport layer. However, when the display device 100 is a liquid crystal display device, the display unit may be configured to include a liquid crystal layer. Hereinafter, for convenience of explanation, it is assumed that the display device 100 is an organic light emitting display device, but is not limited thereto.

The circuit unit may include various transistors, capacitors, and wiring for driving the light emitting device. For example, the circuit unit may be composed of various components such as a driving transistor, a switching transistor, a storage capacitor, a gate wire, and a data wire, but is not limited thereto.

The non-display area (NA) is an area where images are not displayed, and a circuit such as a gate driver for driving the display unit disposed in the display area (AA) and various wiring may be disposed.

The non-display area (NA) may be defined as an area surrounding the display area (AA) as shown in FIG. 1 . However, the non-display area NA may be defined as an area extending from the display area AA. Additionally, the non-display area NA may be defined as extending from a plurality of sides of the display area AA.

The substrate 110 includes a first non-bending area NBA1 including the display area NA, a bending area BA extending from the first non-bending area NBA1, and a second non-bending area BA extending from the bending area BA. It may include a non-bending area (NBA2).

The second non-bending area NBA2 of the substrate 110 may include a pad area.

The pad area may be formed to receive external power and data driving signals, or to exchange touch signals.

A driver integrated circuit (D-IC) may be located in the pad area.

Additionally, in the pad area, a circuit element (PCB) disposed toward the outer area of the substrate 110 rather than the driving integrated circuit (D-IC) may be bonded to a pad (PAD) disposed in the pad area.

For example, the circuit element (PCB) may be, but is not limited to, a flexible printed circuit.

The driving integrated circuit (D-IC) arranged in the pad area is connected to a plurality of wires, and is connected to a plurality of data wires arranged in the display area AA through a plurality of wires or a plurality of gate wires through a gate driver. You can. Accordingly, a driving signal from the driving integrated circuit (D-IC) disposed in the pad area can be applied to each of the plurality of sub-pixels (SP).

The bending area BA may be located between the display area AA and the second non-bending area NBA2 to bend the second non-bending area NBA2 in one direction.

Since the non-display area NA is not an area where an image is displayed, it does not need to be visible from the top surface of the substrate 110. Accordingly, by bending the second non-bending area NBA2 of the substrate 110, the non-display area NA can be reduced while securing an area for wiring and driving circuits.

For example, in the case of a display device according to an embodiment of the present specification, the upper edge of the substrate 110 may be bent toward the back to have a predetermined curvature.

The upper edge of the substrate 110 may correspond to the outside of the display area AA and may correspond to the second non-bending area NBA2 where the driving integrated circuit D-IC and the pad PAD are located. there is. As the substrate 110 is bent, the driving integrated circuit (D-IC) and the second non-bending area (NBA2) may be positioned to overlap the display area (AA) in the rear direction of the display area (AA). Accordingly, the bezel area perceived from the front of the display device 100 can be minimized. Accordingly, the bezel width can be reduced and aesthetics can be improved.

Hereinafter, FIG. 2 will be referred to for a more detailed description of the touch sensor unit of the display device 100.

Figure 2 is a plan view showing a touch sensor unit disposed in the display area of a display device according to an embodiment of the present specification.

Referring to FIG. 2 , in the display device 100 according to an embodiment of the present specification, a touch sensor unit TS is disposed on a plurality of organic light emitting elements in the display area AA of the substrate 110.

The touch sensor unit TS includes a plurality of touch electrodes TE and a plurality of bridge electrodes BR.

The plurality of touch electrodes TE includes a plurality of first touch electrodes TE1 and a plurality of second touch electrodes TE2.

The plurality of first touch electrodes TE1 are arranged in a first direction, for example, a column direction. The plurality of first touch electrodes TE1 are connected to the pad PAD through a plurality of touch link wires and can receive a touch driving signal (Tx signal) from the pad PAD.

The plurality of second touch electrodes TE2 are arranged in a second direction crossing the first direction, for example, in the row direction. The plurality of second touch electrodes (TE2) are connected to the pad (PAD) by a plurality of touch link wires and can transmit a touch driving signal (Tx signal) and a corresponding touch sensing signal (Rx signal) to the pad (PAD). . Each of the plurality of second touch electrodes TE2 may be arranged to be spaced apart at regular intervals, and each second touch electrode TE2 arranged in the same row may be connected by a bridge BR.

The bridge BR may electrically connect one second touch electrode TE2 arranged in the same row and another second touch electrode TE2 arranged adjacent to one second touch electrode TE2. . More specifically, the bridge BR may electrically connect two second touch electrodes TE2 adjacent to each other at a point where the first touch electrode TE1 and the second touch electrode TE2 intersect.

Hereinafter, FIG. 3 will be referred to for a more detailed description of the cross-sectional structure of the display device 100.

FIG. 3 is a cross-sectional view showing one sub-pixel (SP) disposed in the display area of a display device according to an embodiment of the present specification.

Referring to FIG. 3, the display device 100 according to an embodiment of the present specification has a transistor layer (TRL) disposed on a substrate 110, and a planarization layer (PLN) is disposed on the transistor layer (TRL). You can. In addition, a light emitting device layer (EDL) is disposed on the planarization layer (PLN), an encapsulation layer (ENCAP) is disposed on the light emitting device layer (EDL), and a touch sensor layer (TSL) is disposed on the encapsulation layer (ENCAP). and a protective layer (PAC) may be disposed on the touch sensor layer (TSL).

The substrate 110 serves to support and protect components of the display device disposed on the top.

The substrate 110 may be made of glass or a plastic material with flexibility. If the substrate 110 is made of a plastic material, for example, it may be made of polyimide (PI). When the substrate 110 is made of polyimide (PI), the manufacturing process of the display device 100 proceeds with a support substrate made of glass placed below the substrate 110, and the manufacturing process of the display device 100 proceeds. After this is completed, the support substrate can be released. After the support substrate is released, a back plate for supporting the substrate 110 may be placed under the substrate 110.

For example, when a back plate is further disposed below the substrate 110, the back plate may not be disposed in a portion overlapping the bending area BA of the substrate 110, but is not limited thereto.

When the substrate 110 is made of polyimide (PI), moisture penetrates the substrate 110 made of polyimide (PI) and penetrates to the transistor (Td) or the light emitting device 120, thereby causing moisture in the display device 100. It may degrade performance. The display device 100 according to an embodiment of the present specification may be made of double-layer polyimide (PI) to prevent performance of the display device 100 from being deteriorated due to moisture permeation. In addition, by forming an inorganic film between two polyimides (PI), product performance reliability can be improved by blocking moisture components from passing through the lower polyimide (PI).

In addition, the display device 100 according to an embodiment of the present specification forms an inorganic film between two polyimides (PI), thereby blocking the charge charged to the polyimide (PI) disposed below, thereby improving the product. reliability can be improved. Additionally, the process of forming a metal layer to block charges charged to polyimide (PI) can be omitted, thereby simplifying the process and reducing production costs.

In the display device 100 that uses polyimide (PI) as the substrate 110, it is very important to secure the environmental reliability and performance reliability of the panel.

Accordingly, the display device 100 according to an embodiment of the present specification can implement a structure to secure the environmental reliability of the product by using double polyimide (PI) as the substrate 110. For example, the substrate 110 of the display device 100 includes a first polyimide layer 110a, a second polyimide layer 110b, and a first polyimide layer 110a made of polyimide (PI). It may include, but is not limited to, an inorganic insulating layer 110c formed between two polyimide layers 110b. The inorganic insulating layer 110c serves to block the charge from affecting the transistor Td through the second polyimide layer 110b when the first polyimide layer 110a is charged. can do. Additionally, the inorganic insulating layer 110c may serve to block moisture components from penetrating upward through the second polyimide layer 110b.

The inorganic insulating layer 110c may be made of a single layer or multiple layers of silicon nitride (SiNx) or silicon oxide (SiOx). The display device 100 according to an embodiment of the present specification may use silicon oxide (SiOx) material as the inorganic insulating layer 110c. For example, silicon dioxide (SiO ₂ ) material may be formed as the inorganic insulating layer 110c, but the inorganic insulating layer 110c is not limited to this, and the inorganic insulating layer 110c may be formed of silicon dioxide (SiO ₂ ) and silicon nitride ( It may also be formed as a double layer of SiNx).

In the display area AA, the transistor layer TRL includes various patterns 131, 132, 133, 134 and various insulating films 111a, 111b, 112, 113a, 113b for forming transistors such as the driving transistor Td. This can be placed.

Hereinafter, the stacked structure of the transistor layer (TRL) will be described in more detail.

A multi-buffer layer 111a may be disposed on the substrate 110, and an active buffer layer 111b may be disposed on the multi-buffer layer 111a.

A metal layer 125 may be disposed on the multi-buffer layer 111a. The metal layer 125 may function as a light shield and may also be referred to as a light blocking layer.

An active buffer layer 111b may be disposed on the metal layer 125.

The active layer 134 of the driving transistor (Td) may be disposed on the active buffer layer (111b). At this time, the active layer 134 may be made of amorphous silicon or polycrystalline silicon, but is not limited thereto. Polycrystalline silicon has better mobility than amorphous silicon, consumes less energy and has excellent reliability, so it can be applied to a driving transistor within a pixel.

Additionally, the active layer 134 may be made of an oxide semiconductor. Oxide semiconductors have excellent mobility and uniformity properties. For example, oxide semiconductors include indium tin gallium zinc oxide (InSnGaZnO)-based materials, which are quaternary metal oxides, indium gallium zinc oxide (InGaZnO)-based materials, which are ternary metal oxides, indium tin zinc oxide (InSnZnO)-based materials, and tin gallium. Zinc oxide (SnGaZnO) based material, aluminum gallium zinc oxide (AlGaZnO) based material, indium aluminum zinc oxide (InAlZnO) based material, tin aluminum zinc oxide (SnAlZnO) based material, indium zinc oxide (InZnO) based binary metal oxide. Material, tin zinc oxide (SnZnO) based material, aluminum zinc oxide (AlZnO) based material, zinc magnesium oxide (ZnMgO) based material, tin magnesium oxide (SnMgO) based material, indium magnesium oxide (InMgO) based material, indium gallium oxide It can be composed of (InGaO)-based materials, indium oxide (InO)-based materials, tin oxide (SnO)-based materials, zinc oxide (ZnO)-based materials, etc., and the composition ratio of each element is not limited.

The oxide thin film transistor, whose active layer 134 is composed of an oxide semiconductor, is capable of GIP driving at 1-10 Hz based on superior off-current characteristics compared to the existing LTPS (Low Temperature Polycrystalline Silicon) thin film transistor, and thus can realize low power driving. there is.

The active layer 134 may include a source region and a drain region containing p-type or n-type impurities, and a channel region between the source region and the drain region, and a low-concentration doping between the channel region and the adjacent source region and drain region. Additional areas may be included.

The source region and drain region are regions doped with impurities at a high concentration, and the source electrode 132 and drain electrode 133 of the transistor Td can be electrically connected to each other through contact holes.

The impurity ion may be a p-type impurity or an n-type impurity. The p-type impurity may be one of boron (B), aluminum (Al), gallium (Ga), and indium (In), and the n-type impurity may be phosphorus ( It may be one of P), arsenic (As), antimony (Sb), etc.

In addition, the active layer 134 may have a channel region doped with n-type impurities or p-type impurities depending on the structure of the NMOS or PMOS thin film transistor, and is a thin film included in the flexible display device according to an embodiment of the present specification. The transistor can be an NMOS or PMOS thin film transistor.

A gate insulating layer 112 may be disposed on the active layer 134. The gate insulating film 112 may be made of silicon oxide (SiOx), silicon nitride (SiNx), or a multiple layer thereof.

The gate electrode 131 of the driving transistor (Td) may be disposed on the gate insulating film 112. The gate electrode 131 is arranged to overlap the active layer 134 on the gate insulating layer 112. The gate electrode 131 is made of various conductive materials, such as magnesium (Mg), aluminum (Al), nickel (Ni), chromium (Cr), molybdenum (Mo), tungsten (W), gold (Au), or these. It may be formed of an alloy, etc., but is not limited thereto.

A first interlayer insulating film 113a may be disposed on the gate electrode 131.

A second interlayer insulating film 113b may be disposed on the first interlayer insulating film 113a.

The source electrode 132 and the drain electrode 133 of the driving transistor (Td) may be disposed on the second interlayer insulating film 113b. The source electrode 132 and the drain electrode 133 are connected to one side of the active layer 134 through contact holes provided in the second interlayer insulating film 113b, the first interlayer insulating film 113a, and the gate insulating film 112. Each can be connected to the other side. The source electrode 132 and the drain electrode 133 are made of various conductive materials, such as magnesium (Mg), aluminum (Al), nickel (Ni), chromium (Cr), molybdenum (Mo), tungsten (W), It may be formed of gold (Au) or an alloy thereof, but is not limited thereto.

A planarization layer (PLN) may be disposed on the transistor layer (TRL).

The planarization layer (PLN) may include a first planarization layer 115a and a second planarization layer 115b. The planarization layer (PLN) protects the driving transistor (Td) and planarizes its upper part. The first planarization layer 115a may be disposed on the second interlayer insulating layer 113b.

A connection electrode CE may be disposed on the first planarization layer 115a. The connection electrode CE may be connected to either the source electrode 132 or the drain electrode 133 through a contact hole provided in the first planarization layer 115a.

A second planarization layer 115b may be disposed on the connection electrode CE.

A light emitting device layer (EDL) may be disposed on the second planarization layer 115b.

Specifically, the anode 121 may be disposed on the second planarization layer 115b. At this time, the anode 121 may be electrically connected to the second connection electrode CE2 through a contact hole provided in the second planarization layer 115b. At this time, the anode 121 may be formed of a metallic material.

When the display device 100 is a top emission type in which light emitted from the light emitting device 120 is emitted toward the top of the substrate 110 on which the light emitting device 120 is placed, the anode 121 is a transparent conductive It may further include a reflective layer on the layer and the transparent conductive layer. For example, the transparent conductive layer may be made of a transparent conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), etc., and the reflective layer may be made of, for example, silver (Ag). ), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or alloys thereof.

The bank 116 may be arranged to cover a portion of the anode 121. A portion of the bank 116 corresponding to the light emitting area of the sub-pixel may be open. A portion of the anode 121 may be exposed through the open portion of the bank 116 (hereinafter referred to as an open area). At this time, the bank 116 may be made of an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx), or an organic insulating material such as benzocyclobutene-based resin, acrylic resin, or imide-based resin, but is limited thereto. no.

The light emitting layer 122 may be disposed in the open area of the bank 116 and a portion of the upper surface of the bank 116. Accordingly, the light emitting layer 122 may be disposed on the anode 121 exposed through the open area of the bank 116. The light-emitting layer 122 may be composed of a single light-emitting layer, or may have a structure in which a plurality of light-emitting layers that emit light of different colors are stacked. The light-emitting layer 122 may further include an organic layer such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

A cathode 123 may be disposed on the light emitting layer 122. Since the cathode 123 supplies electrons to the light emitting layer 122, it may be made of a conductive material with a low work function. The cathode 123 may be formed as one layer over a plurality of sub-pixels (SP). That is, the cathodes 123 of each of the plurality of sub-pixels (SP) may be connected to each other and formed as one body. For example, the cathode 123 may be formed of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or a ytterbium (Yb) alloy, and may include a metal doping layer. This may further be included, but is not limited thereto.

The light emitting device 120 may be composed of an anode 121, a light emitting layer 122, and a cathode 123.

An encapsulation layer (ENCAP) may be disposed on the light emitting device layer (EDL).

The encapsulation layer (ENCAP) may have a single-layer structure or a multi-layer structure. For example, the encapsulation layer (ENCAP) may include a first encapsulation layer (117a), a second encapsulation layer (117b), and a third encapsulation layer (117c).

At this time, the first encapsulation layer 117a and the third encapsulation layer 117c may be composed of an inorganic film, and the second encapsulation layer 117b may be composed of an organic film. Among the first encapsulation layer 117a, the second encapsulation layer 117b, and the third encapsulation layer 117c, the second encapsulation layer 117b is the thickest and may serve as a planarization layer.

The first encapsulation layer 117a may be disposed on the cathode 123 and closest to the light emitting device 120. The first encapsulation layer 117a may be formed of an inorganic insulating material capable of low-temperature deposition. For example, the first encapsulation layer 117a may be made of silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al ₂ O ₃ ). Since the first encapsulation layer 117a is deposited in a low-temperature atmosphere, damage to the light-emitting layer 122, which contains organic substances vulnerable to high-temperature atmospheres, can be prevented during the deposition process.

The second encapsulation layer 117b may be formed to have a smaller area than the first encapsulation layer 117a. In this case, the second encapsulation layer 117b may be formed to expose both ends of the first encapsulation layer 117a. The second encapsulation layer 117b may serve as a buffer to relieve stress between each layer due to bending of the flexible display device and may serve to enhance planarization performance.

For example, the second encapsulation layer 117b may be made of an organic insulating material such as acrylic resin, epoxy resin, polyimide, polyethylene, or silicon oxycarbon (SiOC). For example, the second encapsulation layer 117b may be formed using an inkjet method, but is not limited thereto.

The third encapsulation layer 117c may be formed on the upper surface of the substrate SUB on which the second encapsulation layer 117b is formed to cover the top and side surfaces of the second encapsulation layer 117b and the first encapsulation layer 117a, respectively. there is. At this time, the third encapsulation layer 117c can minimize or block external moisture or oxygen from penetrating into the first encapsulation layer 117a and the second encapsulation layer 117b. For example, the third encapsulation layer 117c may be made of an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al ₂ O ₃ ). .

A dam that blocks the flow of the second encapsulation layer 117b constituting the encapsulation layer ENCAP may be further disposed in the non-display area NA, but is not limited thereto. For example, the dam is arranged in a closed curve shape surrounding the display area (AA) in the non-display area (NA), the first encapsulation layer (117a) and the third encapsulation layer (117c) are disposed on the dam, 2 The flow of the encapsulation layer 117b may be blocked by a dam.

Although not shown, a color filter may be disposed on the encapsulation layer (ENCAP), but is not limited thereto.

A touch sensor layer (TSL) may be disposed on the encapsulation layer (ENCAP).

For example, the touch buffer layer 118a may be disposed on the third encapsulation layer 117c, and the touch sensor unit TS may be disposed on the touch buffer layer 118a.

The touch sensor unit TS may include a touch electrode TE and a bridge electrode BR located on different layers. A touch interlayer insulating film 118b may be disposed between the touch electrode TE and the bridge electrode BR.

The touch electrode (TE) and bridge electrode (BR) may be made of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or silver (Ag). It may be composed of copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

When forming the touch sensor layer (TSL), chemical solutions (developer or etchant, etc.) used in the process or moisture from the outside may be generated. Accordingly, by disposing the touch buffer film 118a, it is possible to prevent chemicals or moisture, etc. from penetrating into the light emitting layer 122 containing organic materials during the manufacture of the touch sensor layer (TSL). Accordingly, the touch buffer film 118a can prevent damage to the light emitting layer 122, which is vulnerable to chemicals or moisture.

The touch buffer film 118a is an organic insulator that can be formed at a low temperature below a certain temperature (e.g., 100°C) and has a low dielectric constant of 1 to 3 in order to prevent damage to the light emitting layer 122 containing organic materials vulnerable to high temperatures. It can be formed from any material. For example, the touch buffer film 118a may be formed of an acrylic-based, epoxy-based, or siloxane-based material. As the display device bends, the encapsulation layer (ENCAP) may be damaged and the touch electrode (TE) located on the top of the touch buffer layer 118a may be broken. Even if the display device is bent, the touch buffer film 118a, which is made of an organic insulating material and has a planarization performance, can prevent damage to the encapsulation layer (ENCAP) and cracking of the touch electrode (TE).

The organic material layer (PAC) may be disposed to cover the touch electrode (TE). The organic material layer 119 may be composed of an organic insulating film.

Meanwhile, although not shown, a polarizing layer may be further disposed on the organic material layer 119. The polarization layer suppresses reflection of external light on the display area AA of the substrate 110. When the display device 100 is used outside, external natural light flows in and is reflected by the reflective layer included in the anode 121 of the light-emitting device 120, or is reflected by the metal disposed below the light-emitting device 120. It can be reflected by the configured electrode. The image of the display device 100 may not be visible due to the reflected lights. The polarization layer polarizes light introduced from the outside in a specific direction and prevents the reflected light from being emitted to the outside of the display device 100 again.

Although not shown, the cover glass may be adhered to the polarizing layer using an adhesive layer. The adhesive layer may serve to bond each component of the display device 100 to each other, for example, pressure-sensitive adhesive, optical clear adhesive (OCR), and optical clear resin (OCR). It may be formed using an optically transparent display adhesive, but is not limited thereto. The cover glass can protect the components of the display device 100 from external impacts and prevent damage such as scratches.

Hereinafter, FIGS. 4 to 7 will be referred to for a more detailed description of the pad area of the substrate 110 where the pad PAD is disposed.

Figure 4 is a plan view showing area X in Figure 1. FIG. 5 is a cross-sectional view taken along line VI-VI' in FIG. 4. FIG. 6 is a cross-sectional view taken along line VII-VII' of FIG. 4.

Referring to FIGS. 4 to 6 , a plurality of touch link wires (TLL) electrically connecting the pad (PAD) and the touch sensor unit (TS) are disposed in the pad area of the substrate 110 where the pad (PAD) is disposed. do.

The plurality of touch link wires (TLL) may include a first part (TLL1), a second part (TLL2), and a third part (TLL3).

The first portion (TLL1) may be a portion of the plurality of touch link wires (TLL) disposed in the second non-bending area (NBA2) where the pad (PAD) is disposed. The first part (TLL1) includes a straight part (SL) and a diagonal part (OL).

The straight portion SL is connected to the pad PAD and may be arranged in a straight line from the pad PAD toward the display area AA. At this time, the straight portion SL may be made of the same material as the source electrode 132 and the drain electrode 133 of the plurality of transistors Td.

The straight portion SL may be disposed on the same layer as the source electrode 132 and the drain electrode 133 of the transistor Td. Referring to FIG. 5 , the straight portion SL may be disposed on the second interlayer insulating film 113b, which is the same layer as the source electrode 132 and the drain electrode 133 of the transistor Td. That is, the straight portion SL may be formed of the same material on the same layer as the source electrode 132 and the drain electrode 133 of the transistor Td. For example, the straight portion (SL) may be made of copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof. Not limited.

The diagonal portion OL may connect the straight portion SL and the second portion TLL2. The diagonal portion OL may extend from the straight portion SL toward the outer edge of the substrate 110 and be disposed in a diagonal shape. At this time, the diagonal portion OL may be made of the same material as the metal layer of the touch sensor portion TS. Specifically, the diagonal portion OL may be made of the same material as the touch electrode TE or the bridge electrode BR of the touch sensor unit TS.

The diagonal portion OL may be disposed on the same layer as the touch electrode TE or the bridge electrode BR of the touch sensor unit TS. Referring to FIG. 6 , the diagonal portion OL may be disposed on the touch interlayer insulating layer 118b, which is the same layer as the touch electrode TE or the bridge electrode BR of the touch sensor unit TS. That is, the diagonal portion OL may be formed of the same material on the same layer as the touch electrode TE or the bridge electrode BR of the touch sensor unit TS. For example, the diagonal portion OL may be made of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or silver (Ag), copper ( It may be composed of Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

Meanwhile, the straight portion (SL) and the diagonal portion (OL) may be connected through the contact hole (CH). Specifically, the straight portion SL disposed on the same layer as the source electrode 132 and the drain electrode 133 of the transistor Td is connected to the touch electrode TE or the bridge electrode BR of the touch sensor unit TS. It can be connected through an oblique line (OL) and a contact hole (CH) disposed on the same layer.

The second portion (TLL2) may be a portion disposed in the bending area (BA) among the plurality of touch link wires (TLL). The second portion TLL2 extends from the diagonal portion OL and may be arranged in a straight line from the bending area BA to the display area AA. At this time, the second part (TLL2) may be made of the same material as the source electrode 132 and the drain electrode 133 of the plurality of transistors (Td). The second portion (TLL2) may be disposed on the same layer as the source electrode 132 and the drain electrode 133 of the transistor (Td). For example, the second portion TLL2 may be disposed on the second interlayer insulating film 113b, which is the same layer as the source electrode 132 and the drain electrode 133 of the transistor Td. That is, the second part TLL2 may be formed on the same layer and made of the same material as the source electrode 132 and the drain electrode 133 of the transistor Td. For example, the second part (TLL2) may be made of copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof. It is not limited to this.

Meanwhile, the second part (TLL2) may be connected to the diagonal part (OL) and the contact hole (CH). Specifically, the second part (TLL2) disposed on the same layer as the source electrode 132 and the drain electrode 133 of the transistor (Td) is the touch electrode (TE) or the bridge electrode (BR) of the touch sensor unit (TS). It can be connected through the diagonal portion (OL) and the contact hole (CH) disposed on the same layer.

The third portion (TLL3) may be a portion of the plurality of touch link wires (TLL) disposed in the first non-bending area (NBA1) where the display area (AA) is disposed. It extends from the second part TLL2 and may be arranged in a straight line from the first non-bending area NBA1 to the display area AA. At this time, the third part (TLL3) may be made of the same material as the source electrode 132 and the drain electrode 133 of the plurality of transistors (Td) as the second part (TLL2). For example, the third part (TLL3) may be made of copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof. It is not limited to this. Additionally, the third portion TLL3 may be disposed on the same layer as the source electrode 132 and the drain electrode 133 of the transistor Td.

Referring to FIG. 4 , a low-potential link line (VSSL) is disposed adjacent to a plurality of touch link lines (TLL) in the pad area of the substrate 110. The low-potential link line (VSSL) is connected to a plurality of sub-pixels (SP) and can apply low-potential power to the plurality of sub-pixels (SP). The low-potential link wiring (VSSL) includes a first wiring portion (L1), a second wiring portion (L2), and an extension portion (EXT).

The first wiring unit L1 may be disposed on one side of the plurality of touch link wiring TLLs. The first wiring portion L1 may be arranged to be parallel to the plurality of touch link wiring TLLs.

The second wiring unit L2 may be disposed on the other side of the plurality of touch link wiring TLLs. The second wiring portion L2 may be arranged to be parallel to the plurality of touch link wiring TLLs.

The extension portion EXT may extend from the first wiring portion L1 to overlap a plurality of touch link wiring lines TLL. The extension portion EXT may extend from the first wiring portion L1 toward the outside of the substrate 110 and may be connected to the second wiring portion L2 disposed on the other side of the plurality of touch link wiring TLLs. there is. The extension part EXT may be arranged to overlap the first part TLL1 of the touch link line TLL. Specifically, the extension part (EXT) is disposed between the first wiring part (L1) and the second wiring part (L2), and may be formed integrally with the first wiring part (L1) and the second wiring part (L2). . Additionally, the extension part EXT may be arranged to overlap the diagonal part OL of the first part TLL1.

The extension part EXT may be disposed below the first part TLL1. Specifically, the extension part EXT may be disposed below the diagonal part OL in the first part TLL1 to overlap the diagonal part OL.

The extension part EXT may be made of the same material as the source electrode 132 and the drain electrode 133 of the plurality of transistors Td.

The extension portion EXT may be disposed on the same layer as the source electrode 132 and the drain electrode 133 of the transistor Td. Referring to FIG. 6, the extension part EXT may be disposed on the second interlayer insulating film 113b, which is the same layer as the source electrode 132 and the drain electrode 133 of the transistor Td. That is, the extension portion EXT may be formed of the same material on the same layer as the source electrode 132 and the drain electrode 133 of the transistor Td. For example, the extension part (EXT) may be made of copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof. Not limited.

In addition, since the first wiring part L1 and the second wiring part L2 are integrated with the extension part EXT, the first wiring part L1 and the second wiring part L2 also have a plurality of transistors Td. ) may be made of the same material as the source electrode 132 and the drain electrode 133 of the transistor Td, and may be disposed on the same layer as the source electrode 132 and the drain electrode 133 of the plurality of transistors Td.

Figure 7 is a schematic diagram schematically showing the connection relationship between the touch link wire and the low-potential power link wire.

Referring to FIG. 7, the low-potential link wiring (VSSL) has an extension portion (EXT) connecting the first wiring portion (L1) and the second wiring portion (L2) to connect the first wiring portion (L1) and the second wiring portion (L2). The unit L2 may be connected in the same way as if it were connected in parallel. Accordingly, the resistance of the first wiring portion (L1) and the resistance of the second wiring portion (L2) are connected in parallel, so that the same low-potential power is applied to the first wiring portion (L1) and the second wiring portion (L2), Resistance to low-potential power can be reduced.

Accordingly, in the display device 100 according to an embodiment of the present specification, some of the touch link wires are made of the same material as the touch electrode or bridge electrode and are disposed on the same layer in some areas, and the remaining area except for some areas is the source of the transistor. It is made of the same material as the electrode and drain electrode and is placed on the same layer, so that it can have a structure that is robust against the pressure generated during the pad bonding process. Meanwhile, when the entire touch link wiring is made of the same material as the touch electrode or bridge electrode and is disposed on the same layer, there is a problem in that cracks occur because the pressure generated during the pad bonding process is directly transmitted. In this regard, in the display device according to an embodiment of the present specification, all but a portion of the touch link wiring is made of the same material as the source and drain electrodes of the transistor and is disposed on the same layer, so that the pressure generated during the pad bonding process is directly transmitted. Therefore, cracks can be prevented from occurring.

Additionally, in the display device according to an embodiment of the present specification, the low-potential power link wiring includes two wiring portions and an extension portion connecting the wiring portions between the wiring portions, and the two wiring portions and the extension portion are the source electrode and the transistor. By making the same material as the drain electrode and placing it on the same layer, sufficient area for low-potential power link wiring can be secured even with a thinner bezel than before, and low-potential power link wiring can be connected in parallel. Accordingly, the display device according to an embodiment of the present specification can be robust against pressure applied during bonding while also reducing resistance to low-potential power.

A display device according to an embodiment of the present specification may be described as follows.

A display device according to an embodiment of the present specification includes a substrate including a first non-bending area including a display area, a bending area extending from the first non-bending area, and a second non-bending area extending from the bending area. A plurality of organic light-emitting devices disposed in the display area, a touch sensor portion disposed on the plurality of organic light-emitting devices in the display region, a pad disposed in the second non-bending area, and a plurality of touch links electrically connecting the pad and the touch sensor portion. wiring and a low-potential power link wire adjacent to the plurality of touch link wires, wherein the low-potential power link wire is configured to overlap the first wiring portion and the plurality of touch link wires disposed on one side of the plurality of touch link wires. It includes an extension part extending from the wiring part.

According to another feature of the present invention, the plurality of touch link wires may include a first portion disposed in the second non-bending area, a second portion disposed in the bending area, and a third portion disposed in the first non-bending area. You can.

According to another feature of the present invention, the display device further includes a plurality of transistors disposed in a display area on the substrate, and the second portion may be made of the same material as the source electrode and drain electrode of the plurality of transistors.

According to another feature of the present invention, the first portion includes a straight portion extending from the pad and an oblique portion connecting the straight portion and the second portion, and the straight portion is made of the same material as the source and drain electrodes of the plurality of transistors. Additionally, the diagonal portion may be made of the same material as the metal layer of the touch sensor portion.

According to another feature of the present invention, the touch sensor unit includes a touch electrode and a bridge electrode, and the diagonal portion may be made of the same material as the touch electrode or bridge electrode of the touch sensor unit.

According to another feature of the present invention, the extension part may be arranged to overlap the first part.

According to another feature of the present invention, the extension part may be disposed below the first part.

According to another feature of the present invention, the extension portion may be made of the same material as the source electrode and drain electrode of the plurality of transistors.

According to another feature of the present invention, the low-potential power link wiring may further include a second wiring portion connected to the extension portion and disposed on the other side of the plurality of touch link wirings.

According to another feature of the present invention, the first wiring part, the second wiring part, and the extension part may be formed as one body.

According to another feature of the present invention, the first wiring part, the second wiring part, and the extension part may be made of the same material as the source electrode and drain electrode of the plurality of transistors.

Although the embodiments of the present specification have been described in more detail with reference to the accompanying drawings, the present specification is not necessarily limited to these embodiments, and various modifications may be made without departing from the technical spirit of the present specification. . Accordingly, the embodiments disclosed in this specification are not intended to limit the technical idea of the present specification but are for illustrative purposes, and the scope of the technical idea of the present specification is not limited by these embodiments. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive. The scope of protection of this specification should be interpreted in accordance with the claims below, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of rights of this specification.

100: display device
110: substrate
110a: first polyimide layer
110b: second polyimide layer
110c: inorganic insulating layer
111a: Multi-buffer layer
111b: active buffer layer
112: gate insulating film
113a: first interlayer insulating film
113b: second interlayer insulating film
115a: first planarization layer
115b: second planarization layer
116: bank
117a: first encapsulation layer
117b: second encapsulation layer
117c: Third encapsulation layer
118a: touch buffer film
118b: Touch interlayer insulating film
119: Organic layer
120: light emitting element
121: anode
122: light emitting layer
123: cathode
125: metal layer
131: Gate electrode
132: source electrode
133: drain electrode
134: Active layer
D-IC: Driver integrated circuit
PCB: circuit elements
PAD: pad
P: Pixel
CE: connecting electrode
AA: display area
NA: Non-display area
NBA1: first non-bending area
BA: bending area
NBA2: Second non-bending area
TS: Touch sensor unit
TE: touch electrode
BR: bridge electrode
TE1: first touch electrode
TE2: second touch electrode
TRL: transistor layer
PLN: Planarization layer (PLN)
EDL: Light emitting device layer
ENCAP: Encapsulation layer
TSL: Touch sensor layer
PAC: protective layer
TLL: Touch Link Wiring
TLL1: first part
TLL2: Second part
TLL3: Third part
SL: straight part
OL: oblique division
VSSL: Low Potential Link Wiring
L1: first wiring section
L2: second wiring section
EXT: extension

Claims (11)

A substrate including a first non-bending area including a display area, a bending area extending from the first non-bending area, and a second non-bending area extending from the bending area;
a plurality of organic light emitting devices disposed in the display area on the substrate;
a touch sensor unit disposed on the plurality of organic light emitting elements in the display area;
a pad disposed in the second non-bending area;
a plurality of touch link wires electrically connecting the pad and the touch sensor unit; and
It includes a low-potential power link wire adjacent to the plurality of touch link wires,
The low-potential power link wiring is,
a first wiring portion disposed on one side of the plurality of touch link wirings; and
A display device comprising an extension part extending from the first wiring part to overlap the plurality of touch link wires. According to claim 1,
The plurality of touch link wires are:
a first portion disposed in the second non-bending area;
a second portion disposed in the bending area; and
A display device comprising a third portion disposed in the first non-bending area. According to clause 2,
Further comprising a plurality of transistors disposed in the display area on the substrate,
The display device wherein the second portion is made of the same material as the source electrode and drain electrode of the plurality of transistors. According to clause 3,
The first part includes a straight part extending from the pad and a diagonal part connecting the straight part and the second part,
The straight portion is made of the same material as the source and drain electrodes of the plurality of transistors,
The display device wherein the diagonal portion is made of the same material as the metal layer of the touch sensor portion. According to clause 4,
The touch sensor unit includes a touch electrode and a bridge electrode,
The display device wherein the diagonal portion is made of the same material as the touch electrode or bridge electrode of the touch sensor unit. According to clause 4,
The extension part,
A display device arranged to overlap the first portion. According to clause 6,
The extension part,
A display device disposed below the first portion. According to clause 7,
The extension part,
A display device made of the same material as the source electrode and drain electrode of the plurality of transistors. According to clause 3,
The low-potential power link wiring is,
The display device further includes a second wiring part connected to the extension part and disposed on the other side of the plurality of touch link wires. According to clause 9,
A display device, wherein the first wiring portion, the second wiring portion, and the extension portion are formed as one body. According to claim 10,
The display device, wherein the first wiring portion, the second wiring portion, and the extension portion are made of the same material as the source and drain electrodes of the plurality of transistors.

Images