KR20240090161A - Film-like adhesive, integrated dicing/die bonding film, and semiconductor device and method for manufacturing the same - Google Patents

Abstract

A film-like adhesive is disclosed. The film adhesive contains a thermosetting resin, a curing agent, an elastomer, and an inorganic filler with an average particle diameter of 400 nm or less. The content of the inorganic filler may be 18 to 40 mass% based on the total amount of the film adhesive. The total content of the thermosetting resin and the curing agent is 25% by mass or less based on the total amount of the film adhesive.

Description

Film-like adhesive, integrated dicing/die bonding film, and semiconductor device and method for manufacturing the same

The present disclosure relates to a film adhesive, an integrated dicing/die bonding film, and a semiconductor device and a method of manufacturing the same.

Recently, a laminated MCP (Multi Chip Package) in which semiconductor elements (semiconductor chips) are stacked in multiple stages has become popular, and is installed as a memory semiconductor package for mobile phones and portable audio devices. In addition, as mobile phones and other devices become more multifunctional, semiconductor packages are also being promoted for higher speeds, higher densities, and higher integration. Accordingly, semiconductor wafers are also becoming thinner, and problems such as wafer cracks during processing are more likely to occur, which may lead to lower yields. Therefore, as the thickness of semiconductor wafers becomes thinner (for example, 50 μm or less), the transition from conventional physical grinding methods to new processing methods is progressing.

As one of the new processing methods, a method has recently been proposed in which a modified region is formed by irradiating a laser light inside the semiconductor wafer on the cutting line, and then the semiconductor wafer is cut by expanding the outer peripheral portion (e.g. , Patent Documents 1, 2). This method is called stealth dicing. With the development of new processing methods such as stealth dicing, the development of functional films suitable for these methods is progressing. As such a functional film, for example, a dicing/die bonding integrated film that has both the performance of a dicing tape and a die bonding film has been reported (for example, Patent Documents 3 and 4).

Patent Document 1: Japanese Patent Publication No. 2002-192370 Patent Document 2: Japanese Patent Publication No. 2003-338467 Patent Document 3: Japanese Patent Publication No. 2015-211080 Patent Document 4: Japanese Patent Publication No. 2016-115775

However, in the manufacturing process of a semiconductor device, when a modified region is formed and divided by stealth dicing, and when expand under cooling conditions (hereinafter sometimes referred to as "cooling expand") is performed. There is. However, when a conventional dicing/die bonding integrated film is applied to a cooling expand, fine breaks may occur in the adhesive layer made of a film-like adhesive (die-bonding film). If fine breaks in the adhesive layer occur, a decrease in yield and a decrease in production time efficiency for sorting finely divided products becomes a problem.

In addition, in laminated MCP, since semiconductor elements are stacked in multiple stages, the film adhesive used (die bonding film of die bonding integrated film) is required to be thinner (for example, 20 μm or less in thickness). However, when conventional film adhesives are thinned, die shear strength may not be secured in some cases, so there is still room for improvement.

Accordingly, the main purpose of the present disclosure is to provide a film-like adhesive that has excellent divisibility by cooling expand and sufficient die shear strength when thinned.

One aspect of the present disclosure relates to a film adhesive. The film adhesive contains a thermosetting resin, a curing agent, an elastomer, and an inorganic filler with an average particle diameter of 400 nm or less. The content of the inorganic filler may be 18 to 40 mass% based on the total amount of the film adhesive. If the content of the inorganic filler is 18% by mass or more based on the total amount of the film adhesive, the splitting properties of the film adhesive by cooling expand tend to be excellent. If the content of the inorganic filler is 40% by mass or less based on the total amount of the film adhesive, the film adhesive tends to have sufficient die shear strength when thinned. The total content of the thermosetting resin and the curing agent is 25% by mass or less based on the total amount of the film adhesive. If the total content of the thermosetting resin and the curing agent is 25% by mass or less based on the total amount of the film adhesive, the amount of elastomer becomes sufficient and thin film coatability tends to be excellent.

The content of the elastomer may be 40% by mass or more based on the total amount of the film adhesive.

The content of the inorganic filler may be 22 parts by mass or more based on 100 parts by mass of the total amount of the thermosetting resin, curing agent, and elastomer.

The content of the elastomer may be 200 parts by mass or more based on 100 parts by mass of the total amount of the thermosetting resin and curing agent.

The thickness of the film adhesive may be 20 μm or less.

The film adhesive may be used in the manufacturing process of a semiconductor device formed by stacking a plurality of semiconductor elements. In this case, the semiconductor device may be a stacked MCP (Multi Chip Package) in which semiconductor elements (semiconductor chips) are stacked in multiple stages, or may be a three-dimensional NAND type memory.

Another aspect of the present disclosure relates to an integrated dicing/die bonding film. The dicing/die bonding integrated film includes a base material layer, an adhesive layer, and an adhesive layer made of the above-described film-like adhesive in this order.

Another aspect of the present disclosure relates to a semiconductor device. The semiconductor device includes a semiconductor element, a support member on which the semiconductor element is mounted, and an adhesive member provided between the semiconductor element and the support member to adhere the semiconductor element and the support member. The adhesive member is a cured product of the above film-like adhesive. The semiconductor device may further include other semiconductor elements stacked on the surface of the semiconductor element.

Another aspect of the present disclosure relates to a method of manufacturing a semiconductor device. One aspect of the method for manufacturing the semiconductor device is to interpose the film-like adhesive between the semiconductor element and the support member, or between the first semiconductor element and the second semiconductor element, to form the semiconductor element and the support member, or, A process for bonding the first semiconductor element and the second semiconductor element is provided.

Another aspect of the manufacturing method of the semiconductor device includes a step of attaching a semiconductor wafer to the adhesive layer of the integrated dicing and die bonding film, a step of dicing the semiconductor wafer with the adhesive layer attached, and cooling the base layer. A process of manufacturing a plurality of separate semiconductor elements with adhesive pieces by expanding under conditions, a process of picking up the semiconductor elements with adhesive pieces from the adhesive layer, and attaching the semiconductor elements with adhesive pieces to a support member. A process of bonding through an adhesive piece is provided. The method for manufacturing a semiconductor device may further include a step of bonding another semiconductor element with an adhesive piece to the surface of the semiconductor element bonded to the support member via an adhesive piece.

The present disclosure relates to the film adhesive described in [1] to [7], the integrated dicing/die bonding film described in [8], the semiconductor device described in [9], [10], and [11] to [13]. The semiconductor device described in and its manufacturing method are provided.

[1] Containing a thermosetting resin, a curing agent, an elastomer, and an inorganic filler with an average particle diameter of 400 nm or less, the content of the inorganic filler is 18 to 40% by mass based on the total amount of the film adhesive, and the thermosetting adhesive A film adhesive wherein the total content of the resin and the above curing agent is 25% by mass or less based on the total amount of the film adhesive.

[2] The film adhesive according to [1], wherein the content of the elastomer is 40% by mass or more based on the total amount of the film adhesive.

[3] The film adhesive according to [1] or [2], wherein the content of the inorganic filler is 22 parts by mass or more based on 100 parts by mass of the thermosetting resin, the curing agent, and the elastomer.

[4] The film adhesive according to any one of [1] to [3], wherein the content of the elastomer is 200 parts by mass or more based on 100 parts by mass of the thermosetting resin and the curing agent.

[5] The film adhesive according to any one of [1] to [4], wherein the film has a thickness of 20 μm or less.

[6] The film adhesive according to any one of [1] to [5], which is used in the manufacturing process of a semiconductor device formed by stacking a plurality of semiconductor elements.

[7] The film adhesive according to [6], wherein the semiconductor device is a three-dimensional NAND type memory.

[8] A dicing/die bonding integrated film comprising, in this order, a base material layer, an adhesive layer, and an adhesive layer made of the film-like adhesive according to any one of [1] to [5].

[9] A semiconductor element, a support member for mounting the semiconductor element, and an adhesive member provided between the semiconductor element and the support member to adhere the semiconductor element and the support member, the adhesive member , A semiconductor device that is a cured product of the film adhesive according to any one of [1] to [5].

[10] The semiconductor device according to [9], further comprising another semiconductor element stacked on a surface of the semiconductor element.

[11] The film adhesive according to any one of [1] to [5] is interposed between the semiconductor element and the support member, or between the first semiconductor element and the second semiconductor element, and the semiconductor element and the support are provided. A method of manufacturing a semiconductor device comprising a step of bonding a member or the first semiconductor element and the second semiconductor element.

[12] A process of attaching the adhesive layer of the integrated dicing/die bonding film described in [8] to a semiconductor wafer, a process of dicing the semiconductor wafer to which the adhesive layer has been attached, and cooling conditions for the base layer. A process of manufacturing a plurality of separate semiconductor elements with adhesive pieces by expanding, a process of picking up the semiconductor elements with adhesive pieces from the adhesive layer, and adhesively attaching the picked up semiconductor elements with adhesive pieces to a support member. A method of manufacturing a semiconductor device comprising a step of bonding through a piece.

[13] The method for manufacturing a semiconductor device according to [12], further comprising bonding another semiconductor element with an adhesive piece to the surface of the semiconductor element bonded to the support member via an adhesive piece.

According to the present disclosure, a film-like adhesive is provided that is excellent in splitting properties by cooling expand and has sufficient die shear strength when thinned. Additionally, according to the present disclosure, an integrated dicing/die bonding film using such a film-like adhesive, a semiconductor device, and a method for manufacturing the same are provided. Additionally, according to the present disclosure, a method for manufacturing a semiconductor device using such a dicing/die bonding integrated film is provided.

1 is a schematic cross-sectional view showing one embodiment of a film adhesive.
Figure 2 is a perspective view schematically showing a sample in a state fixed to a jig in a split test.
Figure 3 is a cross-sectional view schematically showing a state in which a load is applied to a sample by a press-fit jig in a splitting test.
Figure 4 is a graph schematically showing an example of the results of a split test.
Figure 5 is a schematic cross-sectional view showing one embodiment of a dicing/die bonding integrated film.
Figure 6 is a schematic cross-sectional view showing one embodiment of a semiconductor device.
Figure 7 is a schematic cross-sectional view showing another embodiment of a semiconductor device.
Fig. 8 is a schematic cross-sectional view showing another embodiment of a semiconductor device.

Hereinafter, embodiments of the present disclosure will be described with appropriate reference to the drawings. However, the present disclosure is not limited to the following embodiments. In the following embodiments, the constituent elements (including steps, etc.) are not essential, unless specifically stated. The sizes of components in each drawing are conceptual, and the relative size relationships between components are not limited to those shown in each drawing.

The same applies to the numerical values and ranges in the present disclosure, and do not limit the present disclosure. In this specification, the numerical range indicated using "~" represents a range that includes the numerical values written before and after "~" as the minimum and maximum values, respectively. In the numerical range described stepwise in this specification, the upper limit or lower limit value described in one numerical range may be replaced with the upper limit or lower limit value of another numerical range described stepwise. In addition, in the numerical range described in this specification, the upper or lower limit of the numerical range may be replaced with the value shown in the examples.

In this specification, (meth)acrylate means acrylate or methacrylate corresponding thereto. The same applies to other similar expressions such as (meth)acryloyl group and (meth)acrylic copolymer.

Unless otherwise specified, each component and material illustrated in this specification may be used individually or in combination of two or more types.

[Film-like adhesive]

The film adhesive consists of a thermosetting resin (hereinafter sometimes referred to as “(A) component”), a curing agent (hereinafter sometimes referred to as “(B) component”), and an elastomer (hereinafter referred to as “(B) component”). (sometimes referred to as "component C)") and an inorganic filler with an average particle diameter of 400 nm or less (hereinafter sometimes referred to as "(D) component"). The film adhesive includes, in addition to component (A), component (B), component (C), and component (D), a coupling agent (hereinafter sometimes referred to as "component (E)"), a curing accelerator ( Hereinafter, it may be referred to as "(F) component"), and other components may be further contained.

The film adhesive includes component (A), component (B), component (C), and component (D), and other components added as necessary (component (E), component (F), other components, etc.) It can be obtained by molding an adhesive composition containing into a film form. The film adhesive (adhesive composition) may be in a semi-cured (B stage) state and then in a cured (C stage) state after curing treatment.

(A) Ingredient: Thermosetting resin

Component (A) may contain an epoxy resin from the viewpoint of adhesiveness, or may consist of one type or two or more types of epoxy resin.

Epoxy resins can be used without particular restrictions as long as they have an epoxy group in the molecule. Examples of the epoxy resin include bisphenol A type epoxy resin; Bisphenol F-type epoxy resin; Bisphenol S-type epoxy resin; Phenol novolac type epoxy resin; Cresol novolac type epoxy resin; Bisphenol A novolac type epoxy resin; Bisphenol F novolac type epoxy resin; Stilbene type epoxy resin; Epoxy resin containing a triazine skeleton; Epoxy resin containing a fluorene skeleton; Triphenol methane type epoxy resin; Biphenyl type epoxy resin; Xylylene type epoxy resin; Biphenyl aralkyl type epoxy resin; Naphthalene type epoxy resins, polyfunctional phenols, diglycidyl ether compounds of polycyclic aromatics such as anthracene, etc. are mentioned. These may be used individually or in combination of two or more types. Among these, the epoxy resin may contain a cresol novolak-type epoxy resin or a fluorene skeleton-containing epoxy resin from the viewpoint of film tacking properties, flexibility, etc.

The epoxy equivalent weight of the epoxy resin is not particularly limited, but may be 90 to 300 g/eq, 110 to 290 g/eq, or 130 to 280 g/eq. If the epoxy equivalent weight of the epoxy resin is within this range, better reactivity and fluidity tend to be obtained.

The content of component (A) may be 1 mass% or more, 3 mass% or more, or 5 mass% or more, and may be 30 mass% or less, 20 mass% or less, or 15 mass%, based on the total amount of the film adhesive. The following may be acceptable. When the content of component (A) is within this range, the elastic modulus after curing tends to be more excellent. When the content of component (A) is within this range, the flexibility before curing tends to be more excellent.

(B) Ingredient: Hardener

As a curing agent for component (A), a commonly used curing agent can be used. When component (A) contains an epoxy resin (consisting of one or two or more types of epoxy resins), examples of component (B) include phenol resin, ester compound, aromatic amine, aliphatic amine, acid anhydride, etc. I can hear it. Among these, from the viewpoint of reactivity and stability over time, component (B) may contain a phenol resin or may consist of one type or two or more types of phenol resin.

Phenol resins include phenols such as phenol, cresol, resocin, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol, and/or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene, and formaldehyde. It may be a polycondensation product of aldehydes such as. Polycondensation is usually performed in the presence of a catalyst such as an acid or base. The phenol resin obtained when an acid catalyst is used is especially called a novolak-type phenol resin. Examples of the novolak-type phenol resin include phenol/formaldehyde novolak resin, cresol/formaldehyde novolak resin, xylenol/formaldehyde novolak resin, resorcinol/formaldehyde novolak resin, and phenol-naphthol/formaldehyde novolak resin. etc. can be mentioned. Moreover, examples of the phenol resin include phenols and/or naphthols such as allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolak, and phenol, and dimethoxyparaxylene or bis( Also included are phenol aralkyl resins, naphthol aralkyl resins, biphenyl aralkyl type phenol resins, and phenyl aralkyl type phenol resins synthesized from methoxymethyl) biphenyl.

The hydroxyl equivalent of the phenol resin may be 80 to 300 g/eq, 90 to 280 g/eq, or 100 to 250 g/eq. If the hydroxyl equivalent of the phenol resin is 80 g/eq or more, the storage modulus tends to improve further, and if it is 300 g/eq or less, it becomes possible to prevent problems due to foaming and outgassing.

The softening point of the phenol resin may be 50 to 140°C, 55 to 130°C, or 60 to 120°C. In addition, the softening point is based on JIS K7234 and means a value measured by the ring and ball method.

The content of component (B) may be 1 mass% or more, 2 mass% or more, or 3 mass% or more, and may be 20 mass% or less, 15 mass% or less, or 10 mass%, based on the total amount of the film adhesive. The following may be acceptable.

When the component (A) is an epoxy resin and the component (B) is a phenol resin, the ratio of the epoxy equivalent of the epoxy resin and the hydroxyl equivalent of the phenol resin (epoxy equivalent of the epoxy resin/hydroxyl equivalent of the phenol resin) is from the viewpoint of curability. It may be 0.30/0.70~0.70/0.30, 0.35/0.65~0.65/0.35, 0.40/0.60~0.60/0.40, or 0.45/0.55~0.55/0.45. If the equivalence ratio is 0.30/0.70 or more (the epoxy equivalent of the epoxy resin is 0.30 or more), more sufficient curability tends to be obtained. If the equivalence ratio is 0.70/0.30 or less (the epoxy equivalent of the epoxy resin is 0.70 or less), excessive increase in viscosity can be prevented and more sufficient fluidity can be obtained.

The total content of component (A) and component (B) is 25% by mass or less based on the total amount of the film adhesive. When the total content of component (A) and component (B) is within this range, the amount of component (C) becomes sufficient and thin film coatability tends to be excellent. From the viewpoint of handling, the total content of component (A) and component (B) may be 22% by mass or less, 20% by mass or less, or 18% by mass or less based on the total amount of the film adhesive. The total content of component (A) and component (B) may be 1% by mass or more, 5% by mass or more, 10% by mass or more, or 12% by mass or more, based on the total amount of the film adhesive. When the total content of component (A) and component (B) is within this range, adhesiveness tends to improve further.

(C) Ingredient: Elastomer

(C) As a component, for example, acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, butadiene resin; Modified forms of these resins, etc. can be mentioned. These may be used individually or in combination of two or more types. Among these, component (C) contains structural units derived from (meth)acrylic acid ester because it has fewer ionic impurities, has better heat resistance, is easier to ensure connection reliability of semiconductor devices, and has better fluidity. An acrylic resin (acrylic rubber) may be used as the main component. The content of the structural unit derived from (meth)acrylic acid ester in component (C) may be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more, based on the total amount of structural units. . The acrylic resin (acrylic rubber) may contain a structural unit derived from (meth)acrylic acid ester having a crosslinkable functional group such as an epoxy group, alcoholic or phenolic hydroxyl group, or carboxyl group.

The glass transition temperature (Tg) of component (C) may be -50 to 50°C or -30 to 30°C. When the Tg of component (C) is -50°C or higher, there is a tendency to prevent the flexibility of the adhesive composition from becoming excessively high. This makes it easier to cut the film adhesive during wafer dicing and prevents the generation of burrs. When the Tg of component (C) is 50°C or lower, there is a tendency to suppress a decrease in the flexibility of the film adhesive. As a result, when attaching a film adhesive to a semiconductor wafer, it tends to be easy to sufficiently fill voids. Additionally, it becomes possible to prevent chipping during dicing due to a decrease in adhesion to the semiconductor wafer. Here, the glass transition temperature (Tg) means a value measured using a DSC (differential scanning calorimeter) (e.g., "Thermo Plus 2", manufactured by Rigaku Co., Ltd.). The Tg of component (C) is determined by adjusting the type and content of the structural units constituting component (C) (when component (C) is an acrylic resin (acrylic rubber), structural units derived from (meth)acrylic acid ester). , can be adjusted to the desired range.

(C) The weight average molecular weight (Mw) of the component may be 100,000 to 3 million or 200,000 to 1 million. When the Mw of the component (C) is in this range, film formation properties, film strength, flexibility, tacking properties, etc. can be appropriately controlled, reflow properties are excellent, and embedding properties can be improved. Here, Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve using standard polystyrene.

(C) Commercially available products of the component include SG-70L, SG-708-6, WS-023 EK30, SG-P3, SG-280 EK23, SG-80H, HTR-860P, HTR-860P-3, HTR-860P- 3CSP, HTR-860P-3CSP-3DB, HTR-860P-30B (all manufactured by Nagase Chemtex Co., Ltd.), etc.

The content of component (C) may be 40% by mass or more, 45% by mass or more, or 50% by mass or more based on the total amount of the film adhesive. When the content of component (C) is within this range, thin film coatability tends to be more excellent. The content of component (C) may be 80% by mass or less, 75% by mass or less, or 70% by mass or less, based on the total amount of the film adhesive. If the content of component (C) is within this range, the content of component (A) and (B) can be sufficiently secured, and there is a tendency for it to be compatible with other properties.

The content of component (C) may be 200 parts by mass or more based on 100 parts by mass of the total amount of component (A) and component (B). When the content of component (C) is within this range, thin film coatability tends to be more excellent. The content of component (C) may be 250 parts by mass or more, 300 parts by mass or more, or 350 parts by mass or more, based on 100 parts by mass of the total amount of component (A) and component (B). The content of component (C) may be 600 parts by mass or less, 550 parts by mass or less, or 500 parts by mass or less with respect to 100 parts by mass of the total amount of component (A) and component (B). If the content of component (C) is within this range, the content of component (A) and (B) can be sufficiently secured, and there is a tendency for it to be compatible with other properties.

(D) Component: Inorganic filler with an average particle diameter of 400 nm or less

(D) Examples of the inorganic filler as a component include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, Silica, etc. can be mentioned. These may be used individually or in combination of two or more types, as long as the average particle diameter is 400 nm or less. Among these, the inorganic filler may be silica from the viewpoint of adjustment of melt viscosity. The shape of the inorganic filler is not particularly limited, but may be spherical.

The average particle diameter of component (D) is 400 nm or less, and may be 350 nm or less or 300 nm or less, from the viewpoint of thin film coatability and adhesiveness. (D) The average particle diameter of the inorganic filler as a component may be, for example, 10 nm or more, 30 nm or more, 100 nm or more, or 150 nm or more. Here, the average particle diameter means the average particle diameter determined by the dynamic light scattering method. In addition, the average particle diameter of component (D) can also be determined by using a film adhesive containing component (D). In this case, the residue obtained by heating the film adhesive to decompose the resin component is dispersed in a solvent to prepare a dispersion, and the dynamic light scattering method is applied to this to obtain the average particle diameter of the component (D) from the particle size distribution obtained. .

(D) Component may be composed of, for example, one or two or more types of inorganic fillers with an average particle diameter of 400 nm or less, and one or two or more types of inorganic fillers with an average particle diameter of 10 to 400 nm and an average particle diameter of 30 to 400 nm. Particle diameter 100~400nm, average particle diameter 150~400nm, average particle diameter 10~350nm, average particle diameter 30~350nm, average particle diameter 100~350nm, average particle diameter 150~350nm, average particle diameter 10~300nm, average particle diameter 30~300nm, average particle diameter 100 It may be composed of an inorganic filler with an average particle diameter of ~300nm or 150~300nm.

The content of component (D) may be 18 to 40 mass% based on the total amount of the film adhesive. The content of component (D) may be 18 mass% or more, 20 mass% or more, 22 mass% or more, or 24 mass% or more, based on the total amount of the film adhesive. If the content of component (D) is 18% by mass or more based on the total amount of the film adhesive, the splitting properties of the film adhesive by cooling expand tend to be excellent. The content of component (D) may be 40 mass% or less, 38 mass% or less, 35 mass% or less, or 32 mass% or less, based on the total amount of the film adhesive. If the content of component (D) is 40% by mass or less based on the total amount of the film adhesive, it tends to have sufficient die shear strength when the film adhesive is thinned. The content of component (D) based on the total amount of the film adhesive can also be determined by using a film adhesive containing component (D). In this case, the mass of the film adhesive and the mass of the residue obtained by heating the film adhesive to decompose the resin component are determined, and the content of component (D) can be determined from their mass relationship. The mass of the residue obtained by heating the film adhesive to decompose the resin component may be the mass measured after the residue is washed with a solvent and dried.

The content of component (D) may be 22 parts by mass or more, 25 parts by mass or more, 28 parts by mass or more, or 30 parts by mass, based on 100 parts by mass of the total amount of component (A), component (B), and component (C). It may be more than parts by mass. If the content of component (D) is 22 parts by mass or more based on 100 parts by mass of the total amount of component (A), component (B), and component (C), the splitting property of the film adhesive due to cooling expansion is higher. tends to be excellent. The content of component (D) is 70 parts by mass or less, 65 parts by mass or less, 60 parts by mass or less, and 55 parts by mass or less, based on 100 parts by mass of the total amount of component (A), component (B), and component (C). , or may be 50 parts by mass or less. If the content of component (D) is 70 parts by mass or less based on 100 parts by mass of the total amount of component (A), component (B), and component (C), more sufficient die shear strength is achieved when the film adhesive is thinned. tend to have

In addition to component (D), the film adhesive may contain an inorganic filler with an average particle diameter of more than 400 nm. On the other hand, since the effect of the present disclosure tends to appear more significantly, the film adhesive preferably does not substantially contain (do not add) an inorganic filler with an average particle diameter of more than 400 nm. Here, "substantially not contained" means that the content of inorganic filler with an average particle diameter of more than 400 nm is 5% by mass or less, based on the total amount of component (D) and the inorganic filler with an average particle diameter of more than 400 nm. It means 3% by mass or less, 1% by mass or less, or 0.1% by mass or less.

(E) Ingredient: Coupling agent

(E) The component may be a silane coupling agent. As silane coupling agents, for example, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-aminoethyl) ) Aminopropyl trimethoxysilane, etc. can be mentioned.

(F) Ingredient: Curing accelerator

Examples of the component (F) include imidazoles and their derivatives, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. These may be used individually or in combination of two or more types. Among these, from the viewpoint of reactivity, the (F) component may be imidazoles or their derivatives.

Examples of imidazole include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methyl. Midazole, etc. can be mentioned. These may be used individually or in combination of two or more types.

The film adhesive may further contain other components. Other components include, for example, pigments, ion trapping agents, and antioxidants.

The total content of component (E), component (F), and other components may be 0.1 mass% or more, 0.3 mass% or more, or 0.5 mass% or more, and may be 20 mass%. % or less, 10 mass% or less, or 5 mass% or less.

1 is a schematic cross-sectional view showing one embodiment of a film adhesive. The film-like adhesive 1 shown in FIG. 1 may be a die-bonding film used for adhering a semiconductor chip and a support member or for adhering semiconductor chips to each other. The film adhesive 1 is formed by molding an adhesive composition into a film. The film adhesive 1 is usually in a semi-cured (B stage) state and may be in a hardened (C stage) state after curing treatment. The film-like adhesive 1 can be formed by applying an adhesive composition to a support film. In forming the film adhesive 1, a varnish of an adhesive composition (adhesive varnish) may be used. When using an adhesive varnish, component (A), component (B), component (C), and component (D), and components added as necessary are mixed or kneaded in a solvent to prepare an adhesive varnish, and the resulting adhesive is prepared. The film adhesive 1 can be obtained by applying varnish to a support film and removing the solvent by heating and drying it.

The support film is not particularly limited as long as it can withstand the heat drying described above, but examples include polyester film, polypropylene film, polyethylene terephthalate film, polyimide film, polyetherimide film, polyethylene naphthalate film, and polymethyl film. It may be a pentene film or the like. The support film may be a multilayer film combining two or more types, and may have a surface treated with a release agent such as silicone-based or silica-based. The thickness of the support film may be, for example, 10 to 200 μm or 20 to 170 μm.

Mixing or kneading can be performed by using a normal stirrer, a stirrer, a 3-roller, or a disperser such as a ball mill, and combining them appropriately.

The solvent used in preparing the adhesive varnish is not limited as long as it can uniformly dissolve, knead, or disperse each component, and conventionally known solvents can be used. Examples of such solvents include ketone-based solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethyl formamide, dimethyl acetamide, N-methylpyrrolidone, toluene, and xylene. can be mentioned. The solvent may be methyl ethyl ketone or cyclohexanone from the viewpoint of drying speed and cost.

As a method of applying the adhesive varnish to the support film, known methods can be used, for example, the knife coat method, roll coat method, spray coat method, gravure coat method, bar coat method, curtain coat method, etc. there is. Heat drying is not particularly limited as long as the used solvent is sufficiently volatilized, but can be performed at a temperature of 50 to 150°C for 1 to 30 minutes. Heat drying can be performed stepwise at different heating temperatures and for different heating times.

The thickness of the film adhesive may be 20 μm or less, 18 μm or less, 15 μm or less, 12 μm or less, 10 μm or less, or 8 μm or less. The lower limit of the thickness of the film adhesive is not particularly limited, but may be, for example, 1 μm or more.

The film adhesive produced on the support film may be provided with a cover film on the side opposite to the support film of the film adhesive from the viewpoint of preventing damage or contamination. Examples of the cover film include polyethylene film, polypropylene film, and surface release agent-treated film. The thickness of the cover film may be, for example, 15 to 200 μm or 30 to 170 μm.

Since film adhesives can be made thinner, they can be suitably used in the manufacturing process of semiconductor devices formed by stacking a plurality of semiconductor elements. In this case, the semiconductor device may be a stacked MCP or a three-dimensional NAND type memory.

The film adhesive 1 is evaluated by a splitting property evaluation method using the results of a splitting test conducted under the following conditions (under low temperature conditions where cooling expand is performed (e.g., in the range of -15°C to 0°C)). In the method for evaluating the cleavage properties of a film adhesive, a film adhesive having a cleavage coefficient m of 70 or less may be used.

<Conditions>

Sample width: 5mm

Sample length: 23mm

Relative speed of indentation jig and sample: 10 mm/min

Hereinafter, the split test will be described. The splitting test is classified as a splitting strength test and involves the process of press-fitting the central part of the sample until it breaks while fixing both ends of the sample. As shown in FIG. 2, the sample S is subjected to a split test in a state in which it is inserted and fixed into a pair of sample fixing jigs 20. A pair of sample fixing jigs 20 are made of, for example, thick paper with sufficient strength, and each has a rectangular opening 20a in the center. A load is applied to the center of the sample S in a fixed state using the press-fit jig 21 (see FIG. 3).

The sample S may be a piece cut from the film-like adhesive to be evaluated, and it is not necessary to produce the sample by laminating a plurality of adhesive pieces cut from the film-like adhesive. That is, the thickness of the sample S may be the same as the thickness of the film adhesive. The width (Ws in FIG. 2) of the sample S is, for example, 1 to 30 mm, and may be 3 to 8 mm. You can set it to an appropriate width depending on the situation of the measuring device. The length of the sample S (Ls in FIG. 2) is, for example, 5 to 50 mm, and may be 10 to 30 mm or 6 to 9 mm. The length of the sample S depends on the size of the opening 20a of the sample fixing jig 20. In addition, the shape of the sample fixing jig 20 and the size of the sample S may be other than those described above as long as a cleavage test can be performed.

The press-fitting jig 21 is made of a cylindrical member having a cone-shaped tip portion 21a. The diameter (R in FIG. 3) of the press-fitting jig 21 is, for example, 3 to 15 mm, and may be 5 to 10 mm. The angle (θ in FIG. 3) of the tip portion 21a is, for example, 40 to 120°, and may be 60 to 100°.

The cleavage test is conducted in a constant temperature bath set to a predetermined temperature. The constant temperature bath can be set to a constant temperature in the range of -15°C to 0°C (the temperature of the assumed cooling expand). As a constant temperature bath, for example, TLF-R3-F-W-PL-S manufactured by I-Tech Co., Ltd. can be used. Using an autograph (e.g., AZT-CA01 manufactured by A&D Co., Ltd., load cell 50N, compression mode), the breaking work W, the breaking strength P, and the breaking elongation L are obtained.

The relative speed of the press-fit jig 21 and the sample S is, for example, 1 to 100 mm/min, and may be 5 to 20 mm/min. If this relative speed is excessively fast, there is a tendency that sufficient data on the cutting process cannot be acquired, and if it is excessively slow, the stress is relieved and it tends to be difficult to achieve cutting. The press-fit distance of the press-fit jig 21 is, for example, 1 to 50 mm, and may be 5 to 30 mm. If the indentation distance is excessively short, splitting tends not to occur. For the film adhesive to be evaluated, it is desirable to prepare multiple samples and perform the splitting test multiple times to confirm the stability of the test results.

Figure 4 is a graph showing an example of the results of a split test. As shown in FIG. 4, the cut work W is the area enclosed when a graph is created with the vertical axis as the load and the horizontal axis as the press amount until the sample S is fractured. The breaking strength P is the load when the sample S is fractured. The break elongation L is the amount of elongation of the sample S when the sample S is fractured. The breaking elongation L can be calculated using a trigonometric function from the press-fit distance when the sample S is broken and the width of the opening 20a of the sample fixing jig 20.

From the values of the breaking work W (N mm), the breaking strength P (N), and the breaking elongation L (mm) obtained by the splitting test, from equations (1) and (2), the splitting coefficient m (dimensionless) and Find the cleavage resistance R (N/mm ² ).

m=W/[1000×(P×L)] (1)

R=P/A (2)

According to examination by the present inventors, when a cleavage test is performed under the following conditions, a film-like adhesive having a cleavage coefficient m of 90 or less actually tends to have excellent cleavage properties by cooling expansion in stealth dicing.

<Conditions>

Sample width: 5mm

Sample length: 23mm

Relative speed of indentation jig and sample: 10 mm/min

The cleavage coefficient m (dimensionless) may be 90 or less, 80 or less, 70 or less, 65 or less, or 60 or less. The cleavage coefficient m is a parameter regarding the stretchability of the film adhesive under low temperature conditions. When the cleavage coefficient m is 90 or less, the cleavability by cooling expand tends to become sufficient due to excessive stretchability of the film adhesive. This tendency becomes more pronounced as the value of the cleavage coefficient m becomes smaller. The cleavage coefficient m (dimensionless) may be greater than 0, or may be 10 or more or 15 or more. When the cleavage coefficient m is 15 or more, the propagation of stress tends to be good. A film-like adhesive having a cleavage coefficient m in this range can be suitably used in a semiconductor device manufacturing process in which cooling expand is performed.

The cleavage resistance R may be more than 0 N/mm ² and less than 45 N/mm ² , more than 10 N/mm ² or more than 20 N/mm ² , and less than 40 N/mm ² or less than 35 N/mm ² . If the cutting resistance R is 45 N/mm ² or less, the strength of the film adhesive does not become too excessive and sufficient splitting properties tend to be obtained. When the splitting resistance R exceeds 0 N/mm ² , good stress propagation occurs in the cooling expand, and better splitting properties tend to be obtained. When the breaking resistance R is 20 N/mm ² or more, this tendency tends to become even more noticeable.

[Dicing/die bonding integrated film]

Figure 5 is a schematic cross-sectional view showing one embodiment of a dicing/die bonding integrated film. The integrated dicing/die bonding film 10 shown in FIG. 5 includes a base material layer 2, an adhesive layer 3, and an adhesive layer 1A made of the adhesive composition described above in this order. The adhesive layer 1A may be a film-like adhesive 1. The base material layer 2 and the adhesive layer 3 may be dicing tapes 4. By using such a dicing/die bonding integrated film 10, work efficiency can be improved in that the laminating process for a semiconductor wafer is performed once. The dicing/die bonding integrated film may be in the form of a film, a sheet, a tape, or the like.

The dicing tape 4 includes a base material layer 2 and an adhesive layer 3 provided on the base material layer 2.

Examples of the base material layer 2 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. These base material layers 2 may be subjected to surface treatment such as primer application, UV treatment, corona discharge treatment, polishing treatment, or etching treatment, as needed.

The adhesive layer 3 is a layer made of adhesive. The adhesive is not particularly limited as long as it has sufficient adhesive strength to prevent the semiconductor element from scattering during dicing and has low adhesive strength to the extent that it does not damage the semiconductor element in the subsequent pickup process of the semiconductor element, and is used in the field of dicing tapes. Conventionally known ones can be used. The adhesive may be either a non-radiation curing type or a radiation curing type. A non-radiation curable adhesive is an adhesive that exhibits constant adhesiveness when pressed for a short period of time and does not have the property of deteriorating adhesiveness when irradiated with radiation (for example, ultraviolet rays). On the other hand, a radiation-curing adhesive is an adhesive that has the property of reducing adhesiveness when irradiated with radiation (for example, ultraviolet rays). The radiation-curing adhesive may be, for example, an ultraviolet curing adhesive.

The thickness of the dicing tape 4 (base material layer 2 and adhesive layer 3) may be 60 to 150 μm or 70 to 130 μm from the viewpoint of economic efficiency and film handling.

The dicing/die bonding integrated film 10 is prepared, for example, by preparing a film-like adhesive 1 and a dicing tape 4, and forming an adhesive layer of the film-like adhesive 1 and the dicing tape 4 ( It can be obtained by combining 3). In addition, the dicing/die bonding integrated film 10 is prepared, for example, by preparing a dicing tape 4 and forming an adhesive composition (adhesive varnish) in the same manner as the method of forming the above-described film-like adhesive 1. It can also be obtained by applying it on the adhesive layer (3) of the dicing tape (4).

When bonding the film-like adhesive 1 and the adhesive layer 3 of the dicing tape 4, the dicing/die bonding integrated film 10 is bonded under predetermined conditions using a roll laminator, vacuum laminator, etc. For example, it can be formed by laminating the film-like adhesive 1 to the dicing tape 4 at room temperature (20° C. or in a heated state). Since the integrated dicing/die bonding film 10 can be manufactured continuously and has excellent efficiency, it may be formed using a roll laminator in a heated state.

The film adhesive and the integrated dicing/die bonding film may be used in the manufacturing process of a semiconductor device, or may be used in the manufacturing process of a semiconductor device formed by stacking a plurality of semiconductor elements.

A film adhesive is also suitably used as an adhesive for bonding a semiconductor element and a support member on which the semiconductor element is mounted.

Additionally, the film adhesive is also suitably used as an adhesive for bonding semiconductor elements to each other in a stacked MCP (e.g., three-dimensional NAND type memory), which is a semiconductor device made by stacking a plurality of semiconductor elements.

Film adhesives can also be used, for example, as a protective sheet to protect the back surface of a semiconductor element of a flip chip type semiconductor device, a sealing sheet to seal between the surface of the semiconductor element of a flip chip type semiconductor device and an adherend, etc. You can.

A semiconductor device manufactured using a film adhesive and an integrated dicing/die bonding film will be described in detail below using the drawings. In addition, semiconductor devices with various structures have been proposed in recent years, and the use of the film-like adhesive and dicing/die-bonding integrated film of this embodiment is not limited to semiconductor devices with the structure described below.

[Semiconductor device]

Figure 6 is a schematic cross-sectional view showing one embodiment of a semiconductor device. The semiconductor device 100 shown in FIG. 6 includes a semiconductor element 11, a support member 12 on which the semiconductor element 11 is mounted, and an adhesive member 15. The adhesive member 15 is provided between the semiconductor element 11 and the support member 12, and adheres the semiconductor element 11 and the support member 12. The adhesive member 15 is a cured product of an adhesive composition (cured product of a film-like adhesive). A connection terminal (not shown) of the semiconductor element 11 is electrically connected to an external connection terminal (not shown) through a wire 13 and is sealed by a sealant 14.

Figure 7 is a schematic cross-sectional view showing another embodiment of a semiconductor device. In the semiconductor device 110 shown in FIG. 7, the first-stage semiconductor element 11a has a terminal 16 formed by an adhesive member 15a (cured product of adhesive composition (cured product of film-like adhesive)). It is adhered to the formed support member 12, and the second-stage semiconductor element 11b is attached to the first-stage semiconductor element 11a by the adhesive member 15b (cured product of adhesive composition (cured product of film-like adhesive)). is more attached. The connection terminals (not shown) of the first-stage semiconductor element 11a and the second-stage semiconductor element 11b are electrically connected to an external connection terminal through a wire 13 and are sealed by a sealing material 14. there is. The semiconductor device 110 shown in FIG. 7 may be said to further include another semiconductor element 11b stacked on the surface of the semiconductor element 11a in the semiconductor device 100 shown in FIG. 6.

Figure 8 is a schematic cross-sectional view showing another embodiment of a semiconductor device. The semiconductor device 120 shown in FIG. 8 includes a support member 12 and semiconductor elements 11a, 11b, 11c, and 11d stacked on the support member 12. The four semiconductor elements 11a, 11b, 11c, and 11d are positioned offset from each other in the horizontal direction (direction perpendicular to the stacking direction) for connection to a connection terminal (not shown) formed on the surface of the support member 12. (see Figure 8). The semiconductor element 11a is bonded to the support member 12 by an adhesive member 15a (cured product of adhesive composition (cured product of film-like adhesive)), and includes three semiconductor elements 11b, 11c, and 11d. Also, adhesive members 15b, 15c, and 15d (cured product of adhesive composition (cured product of film-like adhesive)) are interposed, respectively. The semiconductor device 120 shown in FIG. 8, like the semiconductor device 100 shown in FIG. 6, may further include other semiconductor elements 11b, 11c, and 11d stacked on the surface of the semiconductor element 11a. can do.

Although the semiconductor device (package) according to the embodiment of the present disclosure has been described above in detail, the present disclosure is not limited to the above embodiment. For example, in Figure 8, a semiconductor device in which four semiconductor elements are stacked is illustrated, but the number of semiconductor elements to be stacked is not limited to this. 8 illustrates a semiconductor device in which the semiconductor elements are stacked at positions offset from each other in the horizontal direction (direction perpendicular to the stacking direction). However, the semiconductor devices are stacked in the horizontal direction (direction perpendicular to the stacking direction). Semiconductor devices may be stacked in positions that do not deviate from each other.

[Manufacturing method of semiconductor device]

The semiconductor device (semiconductor package) shown in FIGS. 6, 7, and 8 is between a semiconductor element and a support member, or between a semiconductor element (first semiconductor element) and a semiconductor element (second semiconductor element). It can be obtained by a method comprising a step of bonding the semiconductor element and the support member, or the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element), through a film-like adhesive. More specifically, the above-mentioned film adhesive is interposed between the semiconductor element and the support member, or between the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element), and heat-pressed to bond them. It can be obtained by bonding, and then, if necessary, going through a wire bonding process, a sealing process using a sealing material, a heating and melting process including reflow using solder, etc.

As a method of interposing a film adhesive between the semiconductor element and the support member, or between the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element), as described later, a semiconductor element with an adhesive piece attached in advance. After producing, a method of attaching it to a support member or semiconductor element may be used.

Next, an embodiment of a method for manufacturing a semiconductor device will be described using the integrated dicing/die bonding film shown in FIG. 5. In addition, the method of manufacturing a semiconductor device using an integrated dicing/die bonding film is not limited to the method of manufacturing a semiconductor device described below.

The semiconductor device includes, for example, a process of attaching a semiconductor wafer to the adhesive layer of the integrated dicing and die bonding film (laminating process), and a process of dicing the semiconductor wafer to which the adhesive layer has been attached (dicing process). ), a process of manufacturing a plurality of separate semiconductor elements with adhesive pieces by expanding the base layer under cooling conditions (cooling expand process), and a process of picking up the semiconductor elements with adhesive pieces from the adhesive layer (pickup process) ) and a step of bonding the picked-up semiconductor element with the adhesive piece to a support member via the adhesive piece (first bonding step). The method for manufacturing a semiconductor device may further include a step (second bonding step) of bonding another semiconductor element with an adhesive piece to the surface of the semiconductor element bonded to the support member via an adhesive piece.

The laminating process is a process of pressing a semiconductor wafer to the adhesive layer 1A of the integrated dicing/die bonding film 10, and attaching the semiconductor wafer to the adhesive layer 1A. This process may be performed while pressing using a pressing means such as a pressing roll. Additionally, the semiconductor wafer may be the same semiconductor wafer as above.

Examples of semiconductor wafers include single crystal silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide.

The dicing process is a process of dicing a semiconductor wafer. Dicing can be performed, for example, from the circuit surface side of the semiconductor wafer according to a normal method. In addition, in this process, for example, a method called half cut in which a semiconductor wafer is cut in half, a method in which a modified region is formed and divided by a laser (stealth dicing), etc. can be adopted. Since the adhesive layer of the above integrated dicing/die bonding film has excellent splitting properties by cooling expand, it is preferable to employ stealth dicing. The dicing device used in this process is not particularly limited, and a conventionally known device can be used.

The cooling expand process is a process of expanding the base material layer under cooling conditions. Thereby, a plurality of separate semiconductor elements with adhesive pieces can be obtained. Expand conditions under cooling conditions can be set arbitrarily, for example, cooling temperature -30 to 5°C, cooling time 30 seconds to 5 minutes, push-up amount 5-20 mm, push-up speed 50 to 300 mm/ You can do it in seconds.

Examples of semiconductor elements (semiconductor chips) include ICs (integrated circuits). Examples of the support member include lead frames such as 42 alloy lead frames and copper lead frames; Plastic films such as polyimide resin and epoxy resin; Modified plastic films obtained by impregnating and curing plastics such as polyimide resin and epoxy resin on a base material such as glass non-woven fabric; Ceramics such as alumina can be mentioned.

The pickup process is a process of picking up the semiconductor elements with adhesive pieces while separating the semiconductor elements with adhesive pieces in order to peel the semiconductor elements with adhesive pieces that are adhesively fixed to the dicing/die bonding integrated film. The expand method for separating semiconductor elements with adhesive pieces is not particularly limited, and various conventionally known methods can be adopted. An example of a method of separating semiconductor elements with adhesive pieces is a method of expanding the base material layer. If necessary, the expand may be an expand under cooling conditions. The method of pickup is not particularly limited, and various conventionally known methods can be adopted. As such a method, for example, a method of pushing up each semiconductor element with an adhesive piece from the dicing/die bonding integrated film side with a needle and picking up the pushed up semiconductor element with an adhesive piece with a pickup device. I can hear it.

Here, the pickup process can be performed after irradiating radiation to the adhesive layer when the adhesive layer is a radiation (for example, ultraviolet ray) cured type. Thereby, the adhesive force of the adhesive layer to the adhesive piece is reduced, and peeling of the semiconductor element with the adhesive piece becomes easy. As a result, pickup becomes possible without damaging the semiconductor element with the adhesive piece.

The first adhesion process is a process of adhering the picked-up semiconductor element with an adhesive piece to a support member for mounting the semiconductor element via an adhesive piece. Moreover, if necessary, a step (second adhesion step) of adhering another semiconductor element with an adhesive piece to the surface of the semiconductor element bonded to the support member through an adhesive piece may be provided. All adhesion can be performed by compression. Compression conditions are not particularly limited and can be set appropriately as needed. Compression conditions may be, for example, a temperature condition of 80 to 160°C, a load condition of 5 to 15 N, and a time condition of 1 to 10 seconds. In addition, the support member may be the same support member as above.

The method for manufacturing a semiconductor device may include a step of thermosetting the adhesive piece as needed. Through the above-mentioned adhesion process, the adhesive piece bonding the semiconductor element and the support member, or the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element) is heat-cured, thereby enabling more robust adhesive fixation. . When performing heat curing, pressure may be applied simultaneously to cure. The heating temperature in this process can be appropriately changed depending on the components of the adhesive piece. The heating temperature may be, for example, 60 to 200°C. Additionally, the temperature or pressure may be changed step by step.

The method of manufacturing a semiconductor device may, if necessary, include a step (wire bonding step) of electrically connecting the tip of the terminal portion (inner lead) of the support member and the electrode pad on the semiconductor element with a bonding wire. As the bonding wire, for example, gold wire, aluminum wire, copper wire, etc. are used. The temperature when performing wire bonding (providing a bonding wire) may be within the range of 80 to 250°C or 80 to 220°C. The heating time may be several seconds to several minutes. When preparing the bonding wire, the bonding wire may be heated within the above-mentioned temperature range by using a combination of vibration energy from ultrasonic waves and compression energy from applied pressure.

The manufacturing method of a semiconductor device may, if necessary, include a step of sealing the semiconductor element with a sealing material (sealing step). This process is performed to protect the semiconductor element or bonding wire mounted on the support member. This process can be performed by molding the sealing resin (sealing resin) with a mold. The sealing resin may be, for example, an epoxy-based resin. The support member and residue are buried by heat and pressure during sealing, thereby preventing peeling due to air bubbles at the adhesive interface.

The semiconductor device manufacturing method may, if necessary, include a step (post-cure step) of completely curing the insufficiently cured sealing resin in the sealing step. In the sealing process, even when the adhesive piece is not heat-cured, in this step, the adhesive piece is heat-cured together with the curing of the sealing resin, thereby enabling adhesive fixation. The heating temperature in this process can be set appropriately depending on the type of sealing resin. For example, it may be within the range of 165 to 185°C, and the heating time may be about 0.5 to 8 hours.

The manufacturing method of a semiconductor device may, if necessary, include a step (heating and melting step) of heating the semiconductor element with an adhesive piece bonded to a support member using a reflow furnace. In this process, the resin-encapsulated semiconductor device may be surface mounted on the support member. Examples of the surface mounting method include reflow soldering, in which solder is supplied in advance on a printed wiring board, then heated and melted using warm air or the like, and soldering is performed. Examples of heating methods include hot air reflow, infrared reflow, and the like. In addition, the heating method may be to heat the whole or a local part. The heating temperature may be within the range of 240 to 280°C, for example.

Example

Below, the present disclosure will be specifically described based on examples, but the present disclosure is not limited to these.

[Production of film adhesive]

(Examples 1 to 19 and Comparative Examples 1 to 3)

<Preparation of adhesive varnish>

Cyclohexanone was added to the mixture consisting of component (A), component (B), and component (D) with the components and contents (unit: mass parts) shown in Table 1, Table 2, and Table 3, and stirred and mixed. . To this, component (C) was added and stirred with the components and contents (unit: parts by mass) shown in Table 1, Table 2, and Table 3, and component (E) and component (F) were further added, so that each component It was stirred until it became uniform, and an adhesive varnish was prepared. In addition, each component shown in Table 1, Table 2, and Table 3 means the following, and the numerical value shown in Table 1, Table 2, and Table 3 means the mass part of solid content.

(A) Ingredient: Epoxy resin

(A-1) N-500P-10 (brand name, manufactured by DIC Corporation, o-cresol novolac type epoxy resin, epoxy equivalent weight: 203 g/eq)

(A-2) PG-100 (brand name, manufactured by Osaka Gas Chemical Co., Ltd., epoxy resin with a fluorene skeleton, epoxy equivalent weight: 260 g/eq)

(B) Ingredient: Hardener

(B-1) MEH-7800M (brand name, Meiwa Kasei Co., Ltd., phenol novolak-type phenol resin, hydroxyl equivalent weight: 167 to 180 g/eq, softening point: 61 to 90°C)

(B-2) GPH-103 (brand name, manufactured by Nippon Kayaku Co., Ltd., phenylaralkyl type phenol resin, hydroxyl equivalent weight: 220 to 240 g/eq, softening point: 99 to 106°C)

(B-3) PSM-4326 (brand name, Gunei Kagaku Kogyo Co., Ltd., phenol novolac type phenol resin, hydroxyl equivalent weight: 105 g/eq, softening point: 118 to 122°C)

(C) Ingredient: Elastomer

(C-1) HTR-860P (brand name, Nagase Chemtex Co., Ltd., acrylic rubber, weight average molecular weight: 800,000, Tg: -12°C)

(C-2) HTR-860P-30B: manufactured by Nagase Chemtex Co., Ltd., acrylic rubber, weight average molecular weight: 300,000, Tg: -12°C)

(D) Component: Inorganic filler with an average particle diameter of 400 nm or less

(D-1) Aerosil R972 (brand name (“Aerosil” is a registered trademark), manufactured by Nippon Aerosil Co., Ltd., silica particles, average particle size: 16 nm)

(D-2) YA050C-HHG (brand name, Admatex Co., Ltd., silica filler dispersion, average particle diameter: 50 nm)

(D-3) K180ST (brand name, Admatex Co., Ltd., silica filler dispersion, average particle diameter: 180 nm)

(D-4) 3GF (brand name, Admatex Co., Ltd., silica filler dispersion, average particle size: 300 nm)

(d) Component: Inorganic filler with an average particle diameter of more than 400 nm

(d-1) SC2050-HLG (brand name, Admatex Co., Ltd., silica filler dispersion, average particle diameter: 500 nm)

(E) Ingredient: Coupling agent

(E-1) A-189 (brand name, Nippon Unica Co., Ltd., γ-mercaptopropyltrimethoxysilane)

(E-2) Y-9669 (brand name, Momentive Performance Materials Japan product, 3-phenylaminopropyltrimethoxysilane)

(F) Ingredient: Curing accelerator

(F-1) 2PZ-CN (brand name, Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole)

<Production of film adhesive>

The prepared adhesive varnish was filtered through a 500 mesh filter and vacuum degassed. As a support film, a 38-μm-thick polyethylene terephthalate (PET) film subjected to release treatment was prepared, and the adhesive varnish after vacuum defoaming was applied onto the PET film. The applied adhesive varnish was heated and dried in two stages, at 90°C for 5 minutes and then at 140°C for 5 minutes, and the film forms of Examples 1 to 19 and Comparative Examples 1 to 3 in the B stage state were obtained. Adhesive (thickness: 7μm) was obtained. In the case of the film adhesive, the thickness of the film adhesive was adjusted to 7 μm depending on the amount of adhesive varnish applied.

[Evaluation of segmentability by cooling expand]

Adhesive pieces (width 5 mm x length 100 mm) were cut from the film adhesives of Examples 1 to 19 and Comparative Examples 1 to 3, respectively. The adhesive piece was fixed to a pair of jigs (thick paper), and the portions of the adhesive piece protruding from the jig were removed. As a result, a sample to be evaluated (width 5 mm x length 23 mm) was obtained. A split test was performed in a thermostat (TLF-R3-F-W-PL-S, manufactured by I-Tech Co., Ltd.) set at -15°C. That is, a breaking test was conducted using an autograph (AZT-CA01, load cell 50N, manufactured by A&D Co., Ltd.) under the conditions of compression mode, speed of 10 mm/min, and indentation distance of 5 mm, and the breaking work W when the film-like adhesive broke was determined. , the break strength P, and the break strength L were obtained. In addition, the cleavage coefficient m and the cleavage resistance R were calculated from the above equations (1) and (2). In addition, the splitting coefficient m and the splitting resistance R are the average values of eight or more split tests performed for each Example and each Comparative Example. As the cleavage coefficient m becomes smaller, the cleavage properties by cooling expand tend to be excellent. Cases where the cleavage coefficient m is 70 or less are called “A” because the cleavage coefficient by cooling expand is particularly excellent, “B” is when the cleavage coefficient m is more than 70 and 90 or less, and “C” is when the cleavage coefficient m is more than 90. “He evaluated. The results are shown in Table 1, Table 2, and Table 3. Additionally, the values of the splitting coefficient m and the splitting resistance R are also shown in Tables 1, 2, and 3.

[Evaluation of thin film properties (measurement of die shear strength)]

(Production of integrated dicing/die bonding film)

A dicing tape (product name: 6363-45, manufactured by Showa Denko Materials Co., Ltd.) having a base material and an adhesive layer was prepared, and the dicing tape was applied to each of the film-like adhesives of Examples 1 to 19 and Comparative Examples 1 to 3. The adhesive layers were bonded together with a rubber roll to produce integrated dicing and die-bonding films of Examples 1 to 19 and Comparative Examples 1 to 3, comprising the base material, the adhesive layer, and the adhesive layer (film-like adhesive) in this order. .

(Measurement of die shear strength)

Using the dicing/die bonding integrated films of Examples 1 to 19 and Comparative Examples 1 to 3 produced above, the die shear strength of a film adhesive with a thickness of 7 μm was measured. An evaluation sample for measuring die shear strength was produced as follows. A semiconductor wafer with a thickness of 400 μm was prepared, and the film adhesive side of the dicing/die bonding integrated film was laminated to the semiconductor wafer at a stage temperature of 70°C to produce a sample for dicing. The obtained dicing sample was cut using a fully automatic dicer DFD-6361 (manufactured by Disco Co., Ltd.). Cutting was performed by a step cut method using two blades, and dicing blades ZH05-SD2000-N1-70-FF and ZH05-SD4000-N1-70-EE (both manufactured by Disco Co., Ltd.) were used. The cutting conditions were blade rotation speed: 4000 rpm, cutting speed: 50 mm/sec, and chip size: 3 mm x 3 mm. The first stage of cutting was performed so that about 200 μm of the semiconductor wafer remained, and the second stage of cutting was performed so that a 20 μm incision was made in the dicing tape. Next, the adhesive layer made of an ultraviolet curing type adhesive was irradiated with ultraviolet rays to cure the adhesive layer, and the semiconductor element with the adhesive piece was picked up. Subsequently, the adhesive piece of the semiconductor element with the adhesive piece was pressed to the AUS410 board (organic substrate with solder resist) under the conditions of a temperature of 120°C, a pressure of 0.1 MPa, and a time of 1.0 seconds, to prepare a sample for evaluation. Using a universal bond tester (manufactured by Nordson Advanced Technology Co., Ltd.), the die shear strength of the AUS410 substrate and the adhesive piece was measured at room temperature (25°C). The case where the die shear strength was 6 MPa or more was evaluated as “A” because the thin film properties were particularly excellent, the case where the die shear strength was 4 MPa or more but less than 6 MPa was evaluated as “B”, and the case where the die shear strength was less than 4 MPa was evaluated as “C”. The results are shown in Table 1, Table 2, and Table 3. In addition, the values of die shear strength are also shown in Tables 1, 2, and 3.

[Evaluation of anti-reflow]

Using a semiconductor device with an adhesive piece manufactured by measuring the die shear strength, anti-flow properties were produced by the following method. First, using a semiconductor element with an adhesive piece, a four-layer laminate as shown in FIG. 8 was sealed with a mold sealant (manufactured by Hitachi Kasei Co., Ltd., product name "CEL-9750ZHF10") to prepare an evaluation package. got it In addition, the sealing conditions for the sealing material were 175°C/6.7 MPa/90 seconds, and the curing conditions were 175°C for 5 hours. Twenty evaluation packages were prepared, and they were exposed to the environment specified by JEDEC (level 3, 30°C, 60RH%, 192 hours) to absorb moisture. Subsequently, the moisture-absorbed evaluation package was passed through an IR reflow furnace (260°C, maximum temperature 265°C) three times. Evaluation was performed based on the following criteria. The results are shown in Table 1, Table 2, and Table 3.

A: Damage to the evaluation package, change in thickness, peeling at the interface between the adhesive piece and the semiconductor device, etc. were not observed in any of the 20 evaluation packages.

B: Damage of the evaluation package, change in thickness, peeling at the interface between the adhesive piece and the semiconductor device, etc. were observed in at least one of the 20 evaluation packages.

[Table 1]

[Table 2]

[Table 3]

As shown in Table 1, Table 2, and Table 3, the film adhesives of Examples 1 to 19 were excellent in terms of cold splitting properties and thin film properties. On the other hand, the film adhesives of Comparative Examples 1 to 3 were insufficient in at least one of thin film properties and cooling splitting properties. From these results, it was confirmed that the film adhesive of the present disclosure has excellent cleavability by cooling expand and has sufficient die shear strength when reduced to a thin film.

One… film adhesive
1A… adhesive layer
2… base layer
3… adhesive layer
4… dicing tape
10… Dicing/die bonding integrated film
11, 11a, 11b, 11c, 11d... semiconductor device
12… support member
13… wire
14… sealant
15, 15a, 15b, 15c, 15d... adhesive member
16… Terminals
20… Jig for sample fixation
20a… opening
21… press jig
21a… tip
100, 110, 120… semiconductor device

Claims (13)

Contains a thermosetting resin, a curing agent, an elastomer, and an inorganic filler with an average particle diameter of 400 nm or less,
The content of the inorganic filler is 18 to 40% by mass, based on the total amount of the film adhesive,
A film adhesive wherein the total content of the thermosetting resin and the curing agent is 25% by mass or less based on the total amount of the film adhesive. In claim 1,
A film adhesive wherein the content of the elastomer is 40% by mass or more based on the total amount of the film adhesive. In claim 1 or claim 2,
A film adhesive wherein the content of the inorganic filler is 22 parts by mass or more based on 100 parts by mass of the thermosetting resin, the curing agent, and the elastomer. In claim 1 or claim 2,
A film adhesive wherein the content of the elastomer is 200 parts by mass or more based on 100 parts by mass of the thermosetting resin and the curing agent. In claim 1 or claim 2,
Film-like adhesive with a thickness of 20 μm or less. In claim 1 or claim 2,
A film-like adhesive used in the manufacturing process of a semiconductor device formed by stacking a plurality of semiconductor elements. In claim 6,
A film adhesive wherein the semiconductor device is a three-dimensional NAND type memory. A base material layer, an adhesive layer, and an adhesive layer made of the film-like adhesive according to claim 1 or 2 are provided in this order,
Dicing/die bonding integrated film. A semiconductor device,
a support member on which the semiconductor element is mounted;
An adhesive member is provided between the semiconductor element and the support member and adheres the semiconductor element and the support member,
A semiconductor device wherein the adhesive member is a cured product of the film adhesive according to claim 1 or 2. In claim 9,
A semiconductor device further comprising another semiconductor element stacked on a surface of the semiconductor element. The film adhesive according to claim 1 or 2 is interposed between the semiconductor element and the support member, or between the first semiconductor element and the second semiconductor element, and the semiconductor element and the support member, or the first semiconductor. A method of manufacturing a semiconductor device, comprising a step of bonding an element and the second semiconductor element. A step of attaching the adhesive layer of the integrated dicing/die bonding film according to claim 8 to a semiconductor wafer;
A step of dicing the semiconductor wafer to which the adhesive layer is attached;
A process of manufacturing a plurality of separate semiconductor elements with adhesive pieces by expanding the base layer under cooling conditions;
A step of picking up the semiconductor element with the adhesive piece from the adhesive layer;
A manufacturing method of a semiconductor device comprising the step of bonding the picked up semiconductor element with an adhesive piece to a support member via an adhesive piece. In claim 12,
The manufacturing method of a semiconductor device further comprising the step of bonding another semiconductor element with an adhesive piece to the surface of the semiconductor element bonded to the support member via an adhesive piece.

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