KR20240074928A - Apparatus for processing substrate - Google Patents

Abstract

The present invention relates to a substrate processing device that processes a substrate using a combination of a capacitively coupled plasma (CCP) method and a remote plasma generation method.
A substrate processing apparatus according to an embodiment of the present invention includes a process chamber including a plurality of cells for individual processes on a substrate, and a mobile robot that moves a substrate between the plurality of cells, wherein the plurality of cells are , a capacitively coupled plasma cell that generates plasma by a capacitively coupled plasma (CCP) method, and a remote plasma cell that generates plasma by a remote plasma generation method.

Description

Substrate processing device {Apparatus for processing substrate}

The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that processes a substrate using a combination of a capacitively coupled plasma (CCP) method and a remote plasma generation method.

To deposit a thin film on a substrate, chemical vapor deposition (CVD) or atomic layer deposition (ALD) may be used. In the case of chemical vapor deposition or atomic layer thin film deposition, the source gas may cause a chemical reaction on the surface of the substrate to form a thin film. In particular, in the case of atomic layer thin film deposition, it is possible to form a thin film with a thickness similar to the diameter of an atom because one layer of the raw material gas attached to the surface of the substrate forms a thin film.

To expand the range of process temperature, plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD) may be used. Since plasma chemical vapor deposition and plasma atomic layer thin film deposition can be processed at a lower temperature than chemical vapor deposition and atomic layer thin film deposition, the physical properties of the thin film can be improved.

To generate plasma, a capacitively coupled plasma (CCP) method, an inductively coupled plasma (ICP) method, and a hollow cathode plasma (HCP) method can be used. The capacitively coupled plasma method generates plasma by forming an electric field between two electrodes, the inductively coupled plasma method generates plasma by forming an electric field between coils, and the hollow cathode plasma method generates an electric field in a cylindrical space. It can be formed to generate plasma.

Capacitively coupled plasma method, inductively coupled plasma method, and hollow cathode plasma method each have their own unique advantages and disadvantages.

Therefore, there is a need for an invention that makes it possible to generate plasma by utilizing the advantages of different plasma generation methods.

Republic of Korea Patent Publication No. 10-2014-0099079 (2014.08.11)

The problem to be solved by the present invention is to provide a substrate processing device that processes a substrate using a combination of a capacitively coupled plasma (CCP) method and a remote plasma generation method.

The problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

A substrate processing apparatus according to an embodiment of the present invention includes a process chamber including a plurality of cells for individual processes on a substrate, and a mobile robot that moves a substrate between the plurality of cells, wherein the plurality of cells are , a capacitively coupled plasma cell that generates plasma by a capacitively coupled plasma (CCP) method, and a remote plasma cell that generates plasma by a remote plasma generation method.

The remote plasma cell includes a remote plasma generator that generates plasma using a hollow cathode plasma (HCP) method.

The mobile robot moves a substrate between the capacitively coupled plasma cell and the remote plasma cell.

The plurality of cells include an air injection unit that sprays air along the edge of the substrate.

The process chamber includes a partition wall that isolates each of the plurality of cells.

The partition wall includes a moving hole connecting adjacent cells among the plurality of cells, and the mobile robot moves a substrate between the plurality of cells through the moving hole.

The plurality of cells include a substrate supporter that supports a substrate, the substrate supporter rises to a process point where a process is performed on the substrate or descends to a movement point where movement of the substrate is performed, and the movement hole is located at the movement point. It is formed adjacent to the partition wall.

The plurality of cells include a purge gas injection unit that sprays a purge gas.

The plurality of cells include a showerhead that sprays a process gas, a showerhead provided in the capacitively coupled plasma cell sprays a source gas and a reaction gas among the process gas, and a showerhead provided in the remote plasma cell. sprays radicals and source gas generated by dissociation of the reaction gas in the process gas.

The substrate brought into the process chamber is processed in the remote plasma cell and then processed in the capacitively coupled plasma cell.

The substrate processing apparatus further includes a substrate entrance disposed on one side of the process chamber, and the substrate entrance is disposed adjacent to the remote plasma cell relative to the capacitively coupled plasma cell.

Specific details of other embodiments are included in the detailed description and drawings.

According to the substrate processing apparatus according to the embodiment of the present invention as described above, the substrate is processed using a combination of a capacitively coupled plasma (CCP) method and a remote plasma generation method, so that a gap is included. It has the advantage of allowing a uniform thin film to be deposited on the substrate.

1 is a diagram showing a substrate processing apparatus according to an embodiment of the present invention.
Figure 2 is a diagram showing the substrate support moved to the process point.
FIG. 3 is a diagram to explain that a process chamber is composed of a plurality of cells.
Figure 4 is a diagram showing a gap formed in the substrate.
Figure 5 is a diagram showing the formation of a thin film on a substrate.
Figure 6 is a diagram showing the hand of the mobile robot deployed to the board.
Figure 7 is a diagram showing a mobile robot lifting a substrate.
Figure 8 is a diagram showing a substrate being brought into a remote plasma cell.
Figure 9 is a diagram showing a mobile robot lifting a substrate placed in a remote plasma cell.
Figure 10 is a diagram showing a mobile robot moving a substrate from a remote plasma cell to a capacitively coupled plasma cell.
Figure 11 is a diagram showing a new substrate being brought into a remote plasma cell.
Figure 12 is a diagram illustrating substrate exchange between a remote plasma cell and a capacitively coupled plasma cell.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various different forms. The present embodiments are merely intended to ensure that the disclosure of the present invention is complete and to provide common knowledge in the technical field to which the present invention pertains. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used with meanings that can be commonly understood by those skilled in the art to which the present invention pertains. Additionally, terms defined in commonly used dictionaries are not interpreted ideally or excessively unless clearly specifically defined.

FIG. 1 is a diagram showing a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is a diagram showing the substrate support moved to a process point, and FIG. 3 is a diagram illustrating that the process chamber is composed of a plurality of cells. .

1 to 3, the substrate processing apparatus 10 according to an embodiment of the present invention includes a process chamber 100, substrate supports 210 and 220, elevation units 310 and 320, and a showerhead 410. 420), a remote plasma generator 500, a power supply unit 610, 620, a mobile robot 700, and a control unit 800.

The process chamber 100 provides a processing space for processing the substrate W. In particular, the process chamber 100 may provide a process space for performing processes on a plurality of substrates W simultaneously or at time intervals. When described with reference to FIG. 3 , the process chamber 100 may include a plurality of cells 110 and 120 for a plurality of individual processes on the substrate W. Individual processes may be performed on different substrates W in each of the plurality of cells 110 and 120. To this end, each of the plurality of cells 110 and 120 may be equipped with the same or different parts for individual processes.

The plurality of cells 110 and 120 may include a capacitively coupled plasma cell 110 and a remote plasma cell 120 . The capacitively coupled plasma cell 110 may generate plasma using a capacitively coupled plasma (CCP) method, and the remote plasma cell 120 may generate plasma using a remote plasma generation method. The substrate processing apparatus 10 according to an embodiment of the present invention can deposit a thin film on the substrate W. Specifically, the substrate processing device 10 deposits a thin film on the substrate W using plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD). You can. To generate plasma, the substrate processing apparatus 10 may use a combination of a capacitively coupled plasma method and a remote plasma generation method.

Process chamber 100 may include outlets 111 and 121. Discharge ports 111 and 121 may be provided for each of the plurality of cells 110 and 120. Outlets 111 and 121 may be formed at the bottom of each cell. The outlets 111 and 121 may provide a passage for discharging emissions such as process gas or by-products introduced into the corresponding cell to the outside.

A substrate entrance 130 may be formed on one side of the process chamber 100 to allow the substrate W to enter and exit. The substrate W may be brought into the process chamber 100 through the substrate entrance 130 or taken out of the process chamber 100 .

The process chamber 100 may be provided with a shutter 140. The shutter 140 may open or close the substrate entrance 130. When the shutter 140 opens the substrate entrance 130, the substrate W may be brought in or out through the substrate entrance 130. When a process for the substrate W is in progress, the shutter 140 may close the substrate entrance 130 to block the inside of the process chamber 100 from the outside.

The process chamber 100 of the substrate processing apparatus 10 according to an embodiment of the present invention may include four cells. Two of the four cells may be capacitively coupled plasma cells 110 and the remaining two may be remote plasma cells 120.

The substrate W brought into the process chamber 100 may be processed in the remote plasma cell 120 and then processed in the capacitively coupled plasma cell 110 . To this end, the substrate entrance 130 may be disposed closer to the remote plasma cell 120 than to the capacitively coupled plasma cell 110. That is, the substrate entrance 130 can be formed in the remote plasma cell 120. A process on the substrate W may be performed first in the remote plasma cell 120, and then a process on the substrate W may be performed in the capacitively coupled plasma cell 110.

The process chamber 100 may include a partition wall 150 that isolates each of the plurality of cells 110 and 120. A partition wall 150 may be disposed between two adjacent cells among the plurality of cells 110 and 120. Movement of process gas between adjacent cells may be restricted by the partition wall 150 .

The partition wall 150 may include a moving hole 160 connecting adjacent cells among the plurality of cells 110 and 120. As will be described later, the mobile robot 700 moves the substrate W between the plurality of cells 110 and 120, and the mobile robot 700 moves the substrate W between the plurality of cells 110 and 120 through the movement hole 160. The substrate (W) can be moved.

The substrate supports 210 and 220 may support the substrate W. The substrate supports 210 and 220 may have a seating surface on which the substrate W can be seated. A process may be performed on the substrate W seated on the seating surfaces of the substrate supports 210 and 220.

The substrate supports 210 and 220 may be provided for each of the plurality of cells 110 and 120. Hereinafter, the substrate support 210 provided in the capacitively coupled plasma cell 110 will be referred to as a first substrate support, and the substrate support 220 provided in the remote plasma cell 120 will be referred to as a second substrate support.

The substrate supports 210 and 220 may heat the substrate W. For this purpose. Heaters (not shown) may be provided inside the substrate supports 210 and 220. Heat emitted from the heater may be transferred to the substrate W through the bodies of the substrate supports 210 and 220.

The substrate supports 210 and 220 may be provided with support pins 171 and 172. The support pins 171 and 172 may support the substrate (W). Specifically, the support pins 171 and 172 may support the substrate W so that the substrate W is spaced apart from the seating surfaces of the substrate supports 210 and 220 by a certain distance.

In the present invention, the substrate supports 210 and 220 may move in the vertical direction within the process chamber 100. The elevation units 310 and 320 may generate driving force to move the substrate supports 210 and 220 in the vertical direction. FIG. 1 shows the substrate supports 210 and 220 being seated on the bottom surface of the process chamber 100, and FIG. 2 shows the substrate supports 210 and 220 moving to an upper point inside the process chamber 100. It shows one thing.

When the substrate W is brought into or taken out of the process chamber 100, the substrate supports 210 and 220 may be seated on the bottom surface of the process chamber 100 as shown in FIG. 1. Additionally, even when the substrate W moves between adjacent cells, the substrate supports 210 and 220 may be seated on the bottom surface of the process chamber 100 as shown in FIG. 1 .

When a process is performed on the substrate W, the substrate supports 210 and 220 may move to an upper point within the process chamber 100 as shown in FIG. 2 . Hereinafter, the location of the substrate supports 210 and 220 where the process for the substrate W is performed is referred to as a process point, and the substrate supports 210 and 220 that enable the loading and unloading of the substrate W or movement between cells. The location is called the moving point.

The substrate supports 210 and 220 may rise to a process point where a process is performed on the substrate W or may descend to a movement point where the substrate W is moved. The movement hole 160 may be formed in the partition wall 150 adjacent to the movement point. The mobile robot 700 can move the substrate W between adjacent cells through the movement hole 160.

When a process is performed on the substrate W, the substrate W is preferably seated on the seating surfaces of the substrate supports 210 and 220. As the substrate W is seated on the seating surfaces of the substrate supports 210 and 220, a process on the substrate W may be performed while the movement of the substrate W is prevented.

Meanwhile, when the substrate W is brought into or taken out of the process chamber 100 or moved between adjacent cells, the substrate W is preferably spaced apart from the seating surfaces of the substrate supports 210 and 220. The hand 730 of the mobile robot 700 carrying the substrate W may transport the substrate W by supporting the lower side of the substrate W. In order for the hand 730 of the mobile robot 700 to access the lower side of the substrate W, the substrate W must be spaced a certain distance away from the seating surfaces of the substrate supports 210 and 220.

Support pins 171 and 172 may be provided for each of the plurality of cells 110 and 120. The support pins 171 and 172 may support the substrate W so that the substrate W is spaced apart from the seating surfaces of the substrate supports 210 and 220. The support pins 171 and 172 may include pin heads 171a and 172a and pin bodies 171b and 172b. The pin heads 171a and 172a may directly contact the lower side of the substrate W. The pin bodies 171b and 172b may extend downward from the pin heads 171a and 172a. The pin bodies 171b and 172b may be provided in the shape of a straight bar. The pin bodies 171b and 172b may penetrate the substrate supports 210 and 220. For this purpose, through holes 211b and 221b may be formed in the substrate supports 210 and 220.

The pin bodies (171b, 172b) can freely move along the through holes (211b, 221b). When the substrate supports 210 and 220 are seated on the bottom of the process chamber 100, the lower ends of the pin bodies 171b and 172b contact the bottom of the process chamber 100, so that the pin heads 171a and 172a They may be spaced apart from the seating surfaces of the substrate supports 210 and 220. In this case, the substrate W supported by the pin heads 171a and 172a may be spaced apart from the seating surfaces of the substrate supports 210 and 220. Meanwhile, when the substrate supports 210 and 220 are raised, the pin bodies 171b and 172b move along the through holes 211b and 221b, and the support pins 171 and 172 are lowered with respect to the substrate supports 210 and 220. can do. The lowering of the support pins 171 and 172 may be performed until the pin heads 171a and 172a are inserted into the head receiving grooves 211a and 221a of the substrate supports 210 and 220. When the pin heads (171a, 172a) are inserted into the head receiving grooves (211a, 221a), the support of the substrate (W) by the pin heads (171a, 172a) is released, and the substrate (W) is supported by the substrate supports (210, 220). ) can be supported on the seating surface.

The diameter of the pin heads 171a and 172a may be larger than the diameter of the pin bodies 171b and 172b. The diameter of the head receiving grooves (211a, 221a) is formed to be larger than the diameter of the through holes (211b, 221b), and the diameter of the pin heads (171a, 172a) is formed to be larger than the diameter of the through holes (211b, 221b). You can. When the substrate supports 210 and 220 rise while the pin heads 171a and 172a are inserted into the head receiving grooves 211a and 221a, the support pins 171 and 172 also rise together with the substrate supports 210 and 220. can do. When the substrate supports 210 and 220 are raised and positioned at the process point, the substrate W may remain seated on the seating surface of the substrate supports 210 and 220.

Among the substrate supports 210 and 220, the first substrate support 210 may include a grounded electrode (not shown). As described later, when RF power is supplied to the showerheads 410 and 420 provided in the capacitively coupled plasma cell 110, an electric field is generated between the showerheads 410 and 420 and the first substrate support 210. can be formed. Plasma can be generated by an electric field.

A plurality of air injection units 181 and 182 may be provided for each cell 110 and 120. The air injection units 181 and 182 may spray air along the edge of the substrate W. A plurality of air injection units 181 and 182 may be arranged in a circular shape along the edge of the substrate W. Accordingly, the air sprayed from the plurality of air injection units 181 and 182 may form a cylindrical air curtain along the edge of the substrate W.

The air injection units 181 and 182 may spray air (AIR) while a process for the substrate W is in progress to form an air curtain. The air curtain can prevent the process gas used for processing the substrate W from escaping from the area of the air curtain. Additionally, the air curtain may prevent foreign substances from entering the area of the air curtain.

Purge gas injection units 191 and 192 may be provided for each of the plurality of cells 110 and 120. The purge gas injection units 191 and 192 may spray purge gas. Purge gas can be used to discharge the process gas present in each cell to the outside. Emissions such as process gas or by-products present in each cell may be discharged to the outside through the exhaust ports 111 and 121 by the purge gas.

Additionally, the purge gas plays a role in maintaining the internal pressure of each cell constant. For example, while a process for the substrate W is in progress, the purge gas injection units 191 and 192 may spray a purge gas. Accordingly, the internal pressure of the cell increases, and gas from adjacent cells may not flow into the cell.

The showerheads 410 and 420 serve to spray process gas for processing the substrate W onto the substrate W. In the present invention, the process gas may include a source gas and a reaction gas.

Showerheads 410 and 420 may be provided for each cell 110 and 120. Hereinafter, the showerhead 410 provided in the capacitively coupled plasma cell 110 is referred to as a first showerhead, and the showerhead 420 provided in the remote plasma cell 120 is referred to as a second showerhead.

The first showerhead 410 may spray source gas and reaction gas among the process gases. To this end, a first source gas transfer line (SL1) and a first reaction gas transfer line (RL1) may be connected to the first showerhead 410. The source gas and the reaction gas may be transferred through the first source gas transfer line (SL1) and the first reaction gas transfer line (RL1) and supplied to the first showerhead 410.

The source gas and reaction gas may be injected sequentially. After the source gas and the reaction gas are sprayed from the first showerhead 410, they may collide with each other and react. Then, the source gas activated by the reaction gas may contact the substrate W to perform processing on the substrate W. For example, the activated source gas may be deposited as a thin film on the substrate W.

The first showerhead 410 may receive RF power from the power supply units 610 and 620. For example, an electrode plate (not shown) that receives RF power may be provided on the ceiling of the first showerhead 410. As described above, the first substrate support 210 provided in the capacitively coupled plasma cell 110 may include a grounded electrode. When RF power is supplied to the electrode plate, an electric field may be formed between the electrode plate and the electrode of the first substrate support part 210. The process gas flowing into the process chamber 100 is converted into particles in a plasma state by the electric field formed by the supply of RF power, and the plasma particles react with each other or with the surface of the substrate W to form particles on the substrate W. Processing may be performed.

The second showerhead 420 may spray radicals and source gas generated by dissociation of the reaction gas in the process gas. A second source gas transfer line (SL2) may be connected to the second showerhead 420. The source gas may be transferred through the second source gas transfer line SL2 and supplied to the second showerhead 420.

Remote plasma cell 120 may include a remote plasma generator 500. Reactive gas may be supplied to the remote plasma generator 500 through the second reactive gas transfer line RL2. The remote plasma generator 500 may convert the reactive gas into plasma particles. For this purpose, RF power may be supplied to the remote plasma generator 500. The second showerhead 420 may spray radicals among plasma particles generated by the remote plasma generator 500. Additionally, the second showerhead 420 may spray source gas. After the source gas is injected, radicals dissociated from the reaction gas may be injected. A source gas activated by radicals may contact the substrate W to perform processing on the substrate W. For example, the activated source gas may be deposited as a thin film on the substrate W.

The remote plasma generator 500 may generate plasma using a hollow cathode plasma (HCP) method. For example, the remote plasma generator 500 may generate plasma through a cylindrical body having a cathode.

The power supply units 610 and 620 may supply RF power for generating plasma. The power supply units 610 and 620 may include a first power supply unit 610 and a second power supply unit 620. The first power supply unit 610 may supply RF power to the first showerhead 410, and the second power supply unit 620 may supply RF power to the remote plasma generator 500.

The mobile robot 700 serves to move the substrate W between the plurality of cells 110 and 120. For example, the mobile robot 700 may move the substrate W between the capacitively coupled plasma cell 110 and the remote plasma cell 120.

The mobile robot 700 includes a main body 710, an arm 720, and a hand 730. The main body 710 may rotate or move in an up and down direction with respect to the process chamber 100. To this end, a driving unit (not shown) for rotating or moving the main body 710 may be provided inside or outside the main body 710.

A hand 730 may be provided at the end of the arm 720. The arm 720 can adjust the distance between the main body 710 and the hand 730. For example, arm 720 may include a first arm 721 and a second arm 722. The first arm 721 is fixed to the main body 710, and the second arm 722 may be inserted into the first arm 721 or released from the first arm 721. A hand 730 may be provided at the end of the second arm 722. When the second arm 722 is inserted into the first arm 721, the distance between the hand 730 and the main body 710 is reduced, and when the second arm 722 is released from the first arm 721 The distance between the hand 730 and the main body 710 may increase. The hand 730 may be moved to a position to support the substrate W while adjusting the distance between the hand 730 and the main body 710.

Meanwhile, according to some embodiments of the present invention, the arm 720 may be configured to include a plurality of links connected to each other through joints. In this case, the distance between the hand 730 and the main body 710 can be adjusted by changing the posture of the plurality of links. Hereinafter, the description will focus on the configuration of the arm 720 including the first arm 721 and the second arm 722.

The control unit 800 may perform overall control of the substrate processing apparatus 10. For example, the control unit 800 may operate the shutter 140 to open and close the substrate entrance 130 or control the elevating units 310 and 320 to move the substrate supports 210 and 220. Additionally, the control unit 800 may control the spraying of source gas, reaction gas, or radicals through the showerheads 410 and 420 or control the supply of RF power by the power supply units 610 and 620. In addition, the control unit 800 controls the air injection units 181 and 182 or the purge gas injection units 191 and 192 to inject air or purge gas into the process chamber 100, or the mobile robot 700 ) may be controlled to move the substrate W between the plurality of cells 110 and 120.

Figure 4 is a diagram showing a gap being formed on a substrate, and Figure 5 is a diagram showing a thin film being formed on a substrate.

Referring to FIG. 4, a gap G may be formed in the substrate W. For example, the gap G may be the distance between wires.

A thin film may be formed as an interlayer insulating film on the substrate W. In this case, it is preferable that the process material for forming the thin film penetrates and fills the gap (G). On the other hand, when the gap between wires is small, it is not easy for process water to penetrate into the gap (G), so proper thin film formation may not be performed. In particular, when the inlet diameter (d) of the gap (G) is small and the depth (h) of the gap (G) is deep, it may not be easy to infiltrate the process material into the gap (G). This is because the thin film formed at the entrance of the gap G blocks the entrance and prevents the process material from penetrating into the gap G.

Referring to FIG. 5, a thin film (F) may be formed on the substrate (W). The thickness (TH1, TH2, TH3) of the thin film (F) may be formed differently depending on its location.

When the capacitively coupled plasma method is used, the thickness (TH1) of the thin film (F) on the surface of the substrate (W) outside the gap (G) is equal to that of the thin film (F) on the inner wall and bottom surface of the gap (G). It can be formed larger than the thickness (TH2, TH3). Therefore, when the capacitively coupled plasma method is used, the overall film quality of the substrate W can be improved.

When a remote plasma generation method is used, the thicknesses TH2 and TH3 of the thin film F on the inner wall and bottom surface of the gap G can be formed uniformly. Since radicals penetrate into the gap (G) and activate the source gas, when the remote plasma generation method is used compared to the capacitively coupled plasma method, the thickness (TH2, TH3) of the thin film (F) formed inside the gap (G) can be formed uniformly.

The substrate processing apparatus 10 according to an embodiment of the present invention includes a capacitively coupled plasma cell 110 that performs a process on the substrate W using a capacitively coupled plasma method and a capacitively coupled plasma cell 110 that performs a process on the substrate W using a remote plasma generation method. It may be equipped with a remote plasma cell 120 that performs the process. As the thin film (F) is formed on the substrate (W) by using both the capacitive coupled plasma method and the remote plasma generation method, the film quality of the thin film (F) over the entire area of the substrate (W) is maintained and the gap (G) is maintained. The thicknesses TH2 and TH3 of the thin film F formed inside can be formed uniformly.

FIG. 6 is a diagram showing the hand of the mobile robot being deployed to the substrate, and FIG. 7 is a diagram showing the mobile robot lifting the substrate.

Referring to FIGS. 6 and 7 , the mobile robot 700 can lift the substrate W.

In order to lift the substrate W, the substrate supports 210 and 220 may be preferentially seated on the bottom surface of the process chamber 100. In this case, the substrate W supported by the support pins 171 and 172 may be spaced apart from the seating surfaces of the substrate supports 210 and 220.

While the substrate W is spaced apart from the seating surfaces of the substrate supports 210 and 220, the hand 730 of the mobile robot 700 may be deployed toward the substrate W. That is, the hand 730 of the mobile robot 700 approaches the lower side of the substrate (W). To this end, rotation of the main body 710 and length adjustment of the arm 720 may be performed. As the rotation of the main body 710 and the length adjustment of the arm 720 are performed, the hand 730 moves the substrate (W) without the arm 720 or the hand 730 interfering with the support pins 171 and 172. ) becomes accessible to the lower side. FIG. 6 shows the hand 730 of the mobile robot 700 approaching the lower side of the substrate W.

After the hand 730 is deployed to the substrate W, the main body 710 may rise relative to the process chamber 100 . As the main body 710 rises, the hand 730 lifts the substrate W, and the substrate W may separate from the support pins 171 and 172. FIG. 7 shows the mobile robot 700 lifting the substrate W. The mobile robot 700 can simultaneously support the substrates W disposed in a plurality of different cells 110 and 120.

With the substrate W separated from the support pins 171 and 172, the main body 710 may rotate about the rotation axis Ax. As the main body 710 rotates, the substrate W supported by the hand 730 may move to an adjacent cell through the movement hole 160.

Figure 8 is a diagram showing a substrate being brought into a remote plasma cell, Figure 9 is a diagram showing a mobile robot lifting a substrate placed in a remote plasma cell, and Figure 10 is a diagram showing a mobile robot lifting a capacitively coupled plasma in a remote plasma cell. This is a diagram showing moving a substrate into a cell, Figure 11 is a diagram showing a new substrate being brought into a remote plasma cell, and Figure 12 is a diagram showing a substrate being exchanged between a remote plasma cell and a capacitively coupled plasma cell.

Referring to FIG. 8 , substrates W1 and W2 may be brought into the remote plasma cell 120 through the substrate entrance 130.

A process may be performed on the substrates W1 and W2 brought into the remote plasma cell 120 using a remote plasma generation method. At this time, since the substrate is not brought into the capacitive coupled plasma cell 110, a process on the substrate may not be performed in the capacitive coupled plasma cell 110.

Referring to FIGS. 9 and 10 , the mobile robot 700 may move substrates W1 and W2 on which processing has been completed in the remote plasma cell 120 to the capacitively coupled plasma cell 110.

The mobile robot 700 may rotate about the rotation axis Ax after lifting the substrates W1 and W2 from the remote plasma cell 120. As the mobile robot 700 rotates, the substrates W1 and W2 move from the remote plasma cell 120 to the capacitively coupled plasma cell 110. After movement between cells is completed, the mobile robot 700 may descend so that the substrates W1 and W2 are supported on the support pins 171 and 172 of the capacitively coupled plasma cell 110.

Referring to FIG. 11, after the mobile robot 700 moves the substrates W1 and W2 from the remote plasma cell 120 to the capacitively coupled plasma cell 110, a new substrate W3 is introduced through the substrate entrance 130. , W4) may be imported into the remote plasma cell 120.

After the new substrates W3 and W4 are brought into the remote plasma cell 120, processes are performed on the substrates W1, W2, W3, and W4 in the capacitively coupled plasma cell 110 and the remote plasma cell 120. It can be. A process is performed using a capacitively coupled plasma generation method for the substrates W1 and W2 brought into the capacitively coupled plasma cell 110, and a remote plasma process is performed on the substrates W3 and W4 brought into the remote plasma cell 120. The process can be performed in an accrual manner.

Referring to FIG. 12, the mobile robot 700 can exchange substrates W1, W2, W3, and W4 between the capacitively coupled plasma cell 110 and the remote plasma cell 120.

The mobile robot 700 moves the substrates (W1, W2) on which the process has been completed in the capacitive coupled plasma cell 110 to the remote plasma cell 120, and the substrates (W3, W4) on which the process has been completed in the remote plasma cell 120. ) can be moved to the capacitively coupled plasma cell 110. After the movement of the substrates W1, W2, W3, and W4 by the mobile robot 700 is completed, a process on the substrates W1, W2, W3, and W4 may be performed in each cell.

Through this process, the process using the capacitively coupled plasma method and the process using the remote plasma generation method can be repeatedly performed on the substrates W1, W2, W3, and W4. As different processes are performed, both the capacitively coupled plasma method and the remote plasma generation method are used to form thin films on the substrates (W1, W2, W3, and W4). The thickness of the thin film formed inside the gap G can be formed uniformly while maintaining the film quality of the thin film over the entire area.

The substrate for which all processes have been completed is discharged through the substrate entrance 130, and another substrate is brought in through the substrate entrance 130, and the above process can be repeated.

As described above, the remote plasma generator 500 may generate plasma using a hollow cathode plasma method. The remote plasma generator 500 using the hollow cathode plasma method can form and release an electric field relatively quickly. Accordingly, process start and process stoppage in the remote plasma cell 120 can be performed relatively quickly, and the substrate processing apparatus 10 according to an embodiment of the present invention performs a process and remote plasma generation by a capacitively coupled plasma method. The process using this method can be repeated quickly.

Additionally, the interior of the remote plasma generator 500 is made of a metal material, which may prevent oxidation reactions of process gases and radicals.

Although embodiments of the present invention have been described with reference to the above and the attached drawings, those skilled in the art will understand that the present invention can be implemented in other specific forms without changing the technical idea or essential features. You will understand that it exists. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive.

10: substrate processing device 100: process chamber
210, 220: substrate support part 310, 320: lifting part
410, 420: Showerhead 500: Remote plasma generator
610, 620: Power supply unit 700: Mobile robot
800: Control unit

Claims (11)

a process chamber including a plurality of cells for a plurality of individual processes on a substrate; and
Including a mobile robot that moves the substrate between the plurality of cells,
The plurality of cells are,
A capacitively coupled plasma cell that generates plasma using a capacitively coupled plasma (CCP) method; and
A substrate processing device including a remote plasma cell that generates plasma by remote plasma generation. According to claim 1,
The remote plasma cell is a substrate processing device including a remote plasma generator that generates plasma by a hollow cathode plasma (HCP) method. According to claim 1,
A substrate processing apparatus wherein the mobile robot moves a substrate between the capacitively coupled plasma cell and the remote plasma cell. According to claim 1,
A substrate processing apparatus wherein the plurality of cells include an air injection unit that sprays air along the edge of the substrate. According to claim 1,
The process chamber includes a partition wall that isolates each of the plurality of cells. According to clause 5,
The partition wall includes a moving hole connecting adjacent cells among the plurality of cells, and the mobile robot moves a substrate between the plurality of cells through the moving hole. According to clause 6,
The plurality of cells include a substrate support portion that supports the substrate,
The substrate support unit rises to a process point where a process is performed on the substrate or descends to a movement point where movement of the substrate is performed,
The moving hole is formed in the partition wall adjacent to the moving point. According to claim 1,
A substrate processing apparatus wherein the plurality of cells include a purge gas injection unit that sprays a purge gas. According to claim 1,
The plurality of cells include a showerhead that sprays process gas,
A showerhead provided in the capacitively coupled plasma cell sprays a source gas and a reaction gas among the process gas,
A showerhead provided in the remote plasma cell sprays radicals and source gas generated by dissociation of a reaction gas in the process gas. According to claim 1,
A substrate processing apparatus in which a substrate brought into the process chamber is processed in the capacitively coupled plasma cell after the substrate is processed in the remote plasma cell. According to claim 1,
Further comprising a substrate entrance disposed on one side of the process chamber,
and wherein the substrate entrance is disposed adjacent to the remote plasma cell relative to the capacitively coupled plasma cell.

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