KR20240061431A - Apparatus for treating substrate and method for treating a substrate - Google Patents

Abstract

The present invention provides an apparatus for processing a substrate. A substrate processing apparatus according to one embodiment includes a housing having an internal space; a support unit supporting the substrate in the internal space; a processing container surrounding the support unit; a liquid supply unit that supplies liquid to the substrate supported on the support unit; an air flow control unit that controls air flow in the internal space; an exhaust unit that exhausts the atmosphere of the interior space; and a controller, wherein the controller controls the processing vessel, the airflow adjustment unit, and the exhaust unit to adjust the tremor of the liquid film formed on the substrate based on factor data affecting the airflow in the internal space. can do.

Description

Substrate processing apparatus and substrate processing method {APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING A SUBSTRATE}

The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to an apparatus for processing a substrate by heating the substrate and a substrate processing method.

The photographic process for forming a pattern on a wafer includes an exposure process. The exposure process is a preliminary process to cut the semiconductor integrated material attached on the wafer into a desired pattern. The exposure process can have various purposes, such as forming a pattern for etching and forming a pattern for ion implantation. The exposure process uses a mask, a kind of ‘frame’, to draw patterns with light on the wafer. When light is exposed to a semiconductor integrated material on a wafer, such as a resist on a wafer, the chemical properties of the resist change to match the pattern due to the light and the mask. When a developer is supplied to the resist whose chemical properties have changed to match the pattern, a pattern is formed on the wafer.

In order to perform the exposure process precisely, the pattern formed on the mask must be precisely manufactured. It must be checked whether the pattern has been formed satisfactorily according to the required process conditions. A large number of patterns are formed in one mask. Accordingly, it takes a lot of time for an operator to inspect all of a large number of patterns to inspect one mask. Accordingly, a monitoring pattern that can represent one pattern group including a plurality of patterns is formed on the mask. Additionally, anchor patterns that can represent a plurality of pattern groups are formed on the mask. The operator can estimate the quality of the patterns included in one pattern group through inspection of the monitoring pattern. Additionally, the worker can estimate the quality of the patterns formed on the mask through inspection of the anchor pattern.

Additionally, in order to increase the inspection accuracy of the mask, it is desirable that the line widths of the monitoring pattern and the anchor pattern are the same. A linewidth correction process is additionally performed to precisely correct the linewidths of patterns formed on the mask.

Figure 1 shows the normal distribution of the first linewidth (CDP1) of the monitoring pattern of the mask and the second linewidth (CDP2) of the anchor pattern before the linewidth correction process is performed during the mask manufacturing process. Additionally, the first line width (CDP1) and the second line width (CDP2) have sizes smaller than the target line width. Before the linewidth correction process is performed, there is an intentional deviation in the linewidth (CD: Critical Dimension) of the monitoring pattern and anchor pattern. And, by additionally etching the anchor pattern in the linewidth correction process, the linewidths of these two patterns are made the same. In the process of additionally etching the anchor pattern, if the anchor pattern is overetched than the monitoring pattern, a difference in line width between the monitoring pattern and the anchor pattern occurs, making it impossible to precisely correct the line width of the patterns formed on the mask. When additionally etching the anchor pattern, precise etching of the anchor pattern must be performed.

To etch the anchor pattern, an etchant is supplied to the substrate to form a liquid film on the substrate, and then a laser is irradiated to the substrate on which the liquid film is formed to locally heat the anchor pattern. When the liquid film formed on the substrate trembles, the irradiated laser is refracted. In this case, the area other than the anchor pattern that is to be etched is heated, making precise etching of the anchor pattern difficult.

One object of the present invention is to provide a substrate processing device and method that can precisely etch a substrate.

Another object of the present invention is to provide a substrate processing apparatus and method that can precisely control the vibration of a liquid film formed on a substrate.

Another object of the present invention is to provide a substrate processing apparatus and method that can precisely irradiate a laser to a specific pattern formed on a substrate based on the degree of tremor of the liquid film formed on the substrate.

The problem to be solved by the present invention is not limited to the above-mentioned problems, and problems not mentioned can be clearly understood by those skilled in the art from this specification and the attached drawings. There will be.

The present invention provides an apparatus for processing a substrate. A substrate processing apparatus according to one embodiment includes a housing having an internal space; a support unit supporting the substrate in the internal space; a processing container surrounding the support unit; a liquid supply unit supplying liquid to the substrate supported on the support unit; an air flow control unit that controls air flow in the internal space; an exhaust unit that exhausts the atmosphere of the interior space; and a controller, wherein the controller controls the processing vessel, the airflow adjustment unit, and the exhaust unit to adjust the tremor of the liquid film formed on the substrate based on factor data affecting the airflow in the internal space. can do.

According to one embodiment, the parameter data may be at least one of the height of the top of the processing vessel, the amount of fluid supplied to the internal space by the air flow control unit, and the exhaust pressure of the exhaust unit.

According to one embodiment, the device further includes a laser unit that irradiates a laser to the substrate on which the liquid film is formed, wherein the controller operates the laser unit to adjust the irradiation position of the laser according to the degree of tremor of the liquid film. You can control it.

According to one embodiment, the substrate is a mask, the mask has a first pattern and a second pattern different from the first pattern, and the first pattern is formed inside a plurality of cells formed on the mask, A second pattern is formed outside the plurality of cells, and the laser unit may irradiate the laser with the second pattern.

According to one embodiment, the airflow control unit includes a fan and a filter for supplying fluid to the internal space, and the exhaust unit includes an exhaust line connected to the bottom of the housing and/or the bottom of the processing vessel, and It may include a pump installed in the exhaust line to apply exhaust pressure inside the exhaust line.

Additionally, the present invention provides a method for processing a substrate. A substrate processing method according to an embodiment includes a liquid supply step of supplying liquid to a substrate to form a liquid film; After the liquid supply step, a liquid film tremor control step of controlling the tremor of the liquid film; and a heating step of heating a specific pattern formed on the substrate by irradiating a laser to the substrate on which the liquid film is formed, wherein the liquid film tremor control step is based on the factor data affecting the airflow in the internal space for processing the substrate. The oscillation of the liquid film is controlled, and the parameter data may include at least one of the position of the processing vessel surrounding the support unit supporting the substrate, the amount of airflow supplied to the internal space, and the exhaust pressure applied to the internal space. there is.

According to one embodiment, in the heating step, the irradiation position of the laser may be adjusted so that the laser is irradiated in a specific pattern formed on the substrate according to the degree of tremor of the liquid film adjusted in the liquid film tremor control step.

According to one embodiment, the substrate is a mask, the mask has a first pattern and a second pattern different from the first pattern, and the first pattern is formed inside a plurality of cells formed on the mask, A second pattern may be formed outside the plurality of cells, and the specific pattern may be the second pattern.

According to one embodiment, in the liquid film tremor control step, the top of the processing vessel is positioned lower than the top of the substrate supported on the support unit to reduce the tremor of the liquid film.

According to one embodiment, in the liquid film tremor control step, the exhaust pressure may be reduced to lower the tremor of the liquid film.

According to one embodiment of the present invention, the substrate can be precisely etched.

Additionally, according to an embodiment of the present invention, the tremor of the liquid film formed on the substrate can be precisely controlled.

Additionally, according to an embodiment of the present invention, the laser can be precisely irradiated to a specific pattern formed on the substrate based on the degree of tremor of the liquid film formed on the substrate.

The effects of the present invention are not limited to the effects described above, and effects not mentioned can be clearly understood by those skilled in the art from this specification and the attached drawings.

Figure 1 is a diagram showing the normal distribution of the line width of the monitoring pattern and the line width of the anchor pattern.
Figure 2 is a plan view schematically showing a substrate processing apparatus according to an embodiment.
Figure 3 is a diagram of a substrate according to one embodiment viewed from above.
Figure 4 is a cross-sectional view schematically showing a process chamber according to one embodiment.
Figure 5 is a cross-sectional view of the optical module according to one embodiment as seen from the side.
Figure 6 is a cross-sectional view of the optical module according to one embodiment as seen from above.
7 is a flow chart of a substrate processing method according to one embodiment.
Figure 8 is a cross-sectional view schematically showing a process chamber when the processing vessel is located in a first position, according to one embodiment.
Figure 9 is a cross-sectional view schematically showing a process chamber when the processing vessel is located in a second position, according to one embodiment.
Figure 10 is a table showing the degree of shaking of the liquid film according to factor data.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the attached drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This example is provided to more completely explain the present invention to those with average knowledge in the art. Therefore, the shapes of components in the drawings are exaggerated to emphasize a clearer explanation.

Terms such as first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The above terms may be used for the purpose of distinguishing one component from another component. For example, a first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component without departing from the scope of the present invention.

Figure 2 is a plan view schematically showing a substrate processing apparatus according to an embodiment. Figure 3 is a view of a substrate according to one embodiment viewed from above.

The substrate processing apparatus 1 includes an index module 10, a processing module 20, and a controller 30. According to one embodiment, the index module 10 and the processing module 20 may be arranged along one direction. Hereinafter, the direction in which the index module 10 and the processing module 20 are arranged is defined as the first direction 2. In addition, when viewed from above, the direction perpendicular to the first direction (2) is defined as the second direction (4), and the direction perpendicular to the plane including both the first direction (2) and the second direction (4) is defined as the second direction (4). It is defined as the third direction (6). For example, the third direction 6 may be a direction perpendicular to the ground.

The index module 10 transports the substrate M. More specifically, the index module 10 transports the substrate M between the processing module 20 and the container C in which the substrate M is stored. The index module 10 has a longitudinal direction parallel to the second direction 4.

The index module 10 has a load port 12 and an index frame 14. The container C containing the substrate M is seated in the load port 12. The load port 12 may be placed on the opposite side of the processing module 20 based on the index frame 14. A plurality of load ports 12 may be provided. A plurality of load ports 12 are arranged in a row along the second direction 4. The number of load ports 12 may increase or decrease depending on the process efficiency and footprint conditions of the processing module 20.

The container (C) may be an airtight container such as a front opening unified pod (FOUP). Container C may be placed in load port 12 by an operator or a transfer means (not shown) such as an overhead transfer, overhead conveyor, or Automatic Guided Vehicle. there is.

The index frame 14 has a transport space for transporting the substrate M. An index robot 120 and an index rail 124 are arranged in the conveyance space of the index frame 14. The index robot 120 transports the substrate M between the index module 10 and the buffer unit 200, which will be described later. The index robot 120 has a plurality of index hands 122. A substrate M is placed on the index hand 122. The index hand 122 can move forward and backward, rotate around the third direction 6, and move along the third direction 6. Each of the plurality of index hands 122 may be spaced apart in a direction parallel to the third direction 6. The plurality of index hands 122 can each move independently.

The index rail 124 has a longitudinal direction parallel to the second direction 4. The index robot 120 is placed on the index rail 124, and the index robot 120 moves forward and backward along the index rail 124.

The controller 30 can control components included in the substrate processing apparatus 1. The controller 30 includes a process controller consisting of a microprocessor (computer) that controls the substrate processing device 1, a keyboard that allows an operator to input commands to manage the substrate processing device 1, and a substrate processing device. A user interface consisting of a display that visualizes and displays the operating status of the device 1, and a control program for executing the processing performed in the substrate processing device 1 under the control of the process controller, according to various data and processing conditions. Each component may be provided with a storage unit in which a program for executing processing, that is, a processing recipe, is stored. Additionally, the user interface and storage may be connected to the process controller. The processing recipe may be stored in a storage medium in the storage unit, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as a flash memory.

The processing module 20 may include a buffer unit 200, a transport frame 300, and a process chamber 400.

The buffer unit 200 has a buffer space. The buffer space functions as a space where the substrate M brought into the processing module 20 and the substrate M taken out from the processing module 20 temporarily stay.

The buffer unit 200 is disposed between the index frame 14 and the carrier frame 300. The buffer unit 200 is located on one side of the transport frame 300. Inside the buffer unit 200, a plurality of slots (not shown) in which the substrate M is placed are installed. A plurality of slots (not shown) are spaced apart from each other in the vertical direction.

The front face and rear face of the buffer unit 200 are open. The front may be the side facing the index frame 14. The rear may be a side facing the transport frame 300. The index robot 120 can access the buffer unit 200 through the front, and the transfer robot 320, which will be described later, can access the buffer unit 200 through the rear.

The transport frame 300 provides a space for transporting the substrate M between the buffer unit 200 and the process chamber 400. The transport frame 300 has a longitudinal direction parallel to the first direction 2. A plurality of process chambers 400 are disposed on the side of the transport frame 300. The transport frame 300 and the process chamber 400 are arranged in the second direction 4. According to one embodiment, the process chambers 400 may be disposed on both sides of the transport frame 300. The process chambers 400 disposed on one side and the other side of the transport frame 300 are arranged in the first direction 2 and the third direction 6, respectively, A It can have an array of .

The transfer frame 300 has a transfer robot 320 and a transfer rail 324. The transport robot 320 transports the substrate M. More specifically, the transfer robot 320 transfers the substrate M between the buffer unit 200 and the process chambers 400. Additionally, the transfer robot 320 transfers the substrate M between the process chambers 400. The transfer robot 320 has a plurality of hands 322 on which the substrate M is placed. The hand 322 can move forward and backward, rotate about the third direction 6, and move along the third direction 6. The plurality of hands 322 are arranged to be spaced apart in a direction parallel to the third direction 6 and can move independently of each other.

The conveyance rail 324 is located within the conveyance frame 300 and is formed in a direction parallel to the longitudinal direction of the conveyance frame 300. The transfer robot 320 is placed on the transfer rail 324, and the transfer robot 320 can move forward and backward along the transfer rail 324.

The object to be processed in the process chamber 400 may be any one of a wafer, glass, and photo mask. The substrate processed in the process chamber 400 according to one embodiment may be a photo mask, which is a ‘frame’ used during the exposure process. The substrate M according to one embodiment may have a square shape. A reference mark (AK), a first pattern (P1), and a second pattern (P2) may be formed on the substrate (M).

At least one reference mark (AK) may be formed on the substrate (M). For example, the reference mark AK may be formed in a corner area of the substrate M with a number corresponding to the number of corners of the substrate M. The reference mark (AK) can be used when aligning the substrate (M). More specifically, the reference mark AK can be used to determine whether distortion has occurred in the substrate M during the process of supporting the substrate M on the support unit 430 (see FIG. 4), which will be described later. Additionally, the reference mark AK may be a mark used to confirm location information of the substrate M. More specifically, the reference mark AK may be a mark used to confirm positional information about a plurality of patterns formed on the substrate M. Accordingly, the reference mark (AK) may be defined as the so-called Align Key.

At least one cell (CE) may be formed on the substrate (M). A plurality of patterns are formed in each of the plurality of cells CE. The patterns formed in each cell CE include an exposure pattern EP and a first pattern P1. Patterns formed in each cell (CE) may be defined as one pattern group.

The exposure pattern EP may be used to form an actual pattern on the substrate M. The first pattern P1 may be a pattern representing the exposure patterns EP formed in one cell CE. When a plurality of cells CE are formed on the substrate M, there may also be a plurality of first patterns P1 formed on the cells CE. That is, first patterns P1 may be formed in each of the plurality of cells CE. However, the present invention is not limited to this, and a plurality of first patterns P1 may be formed in one cell CE.

The first pattern P1 may have a shape in which parts of each exposure pattern EP are combined. The first pattern (P1) can be defined as a so-called monitoring pattern. The average value of the linewidths of the plurality of first patterns (P1) may be defined as a linewidth monitoring macro (Critical Dimension Monitoring Macro (CDMM)).

When an operator inspects the first pattern (P1) formed in one cell (CE) through a scanning electron microscope (SEM), the quality of the shape of the exposure patterns (EP) formed in one cell (CE) is estimated. can do. Accordingly, the first pattern P1 may function as an inspection pattern. Unlike the above-described example, the first pattern P1 may be one of the exposure patterns EP participating in the actual exposure process. Optionally, the first pattern P1 may be an inspection pattern and at the same time a pattern participating in the actual exposure process.

The second pattern P2 is formed outside the cells CE formed on the substrate M. That is, the second pattern P2 is formed in an area outside the area where the plurality of cells CE are formed. The second pattern P2 may be a pattern representing the exposure patterns EP formed on the substrate M. The second pattern (P2) may be defined as an anchor pattern. A plurality of second patterns P2 may be formed outside the cells CE. The plurality of second patterns P2 may be arranged in a combination of series and/or parallel. For example, five second patterns P2 may be formed on the substrate M, and the five second patterns P2 may be arranged in a combination of two columns and three rows. However, this is for illustrative purposes only, and the combination of the second patterns P2 may be modified in various ways.

When an operator inspects the second pattern P2 using a scanning electron microscope (SEM), the quality of the shape of the exposure patterns EP formed on one substrate M can be estimated. Accordingly, the second pattern P2 may function as an inspection pattern. The second pattern P2 may be an inspection pattern that does not participate in the actual exposure process. Additionally, the second pattern P2 may be a pattern that sets the process conditions of the exposure apparatus.

Figure 4 is a cross-sectional view schematically showing a process chamber according to one embodiment. Figure 5 is a cross-sectional view of the optical module according to one embodiment as seen from the side. Figure 6 is a cross-sectional view of the optical module according to one embodiment as seen from above.

Hereinafter, with reference to FIGS. 4 to 6, a process chamber according to an embodiment of the present invention will be described.

The process chamber 400 performs a predetermined process on the substrate M. More specifically, the process performed in the process chamber 400 may be a fine critical dimension correction (FCC) process among the mask manufacturing processes for the exposure process. That is, in the process chamber 400, a specific pattern (eg, the second pattern P2) among the plurality of patterns formed on the substrate M may be etched. Additionally, the substrate M processed in the process chamber 400 may be a substrate M on which preprocessing has been performed. The line widths of the first pattern P1 and the second pattern P2 formed on the substrate M brought into the process chamber 400 may be different from each other. According to one embodiment, the line width of the first pattern (P1) may be relatively larger than the line width of the second pattern (P2). For example, the line width of the first pattern P1 may have a first width (eg, 69 nm), and the line width of the second pattern P2 may have a second width (eg, 68.5 nm).

The process chamber 400 may include a housing 410, a processing vessel 420, a support unit 430, a liquid supply unit 450, and an optical module 460.

The housing 410 may have a generally hexahedral shape. Housing 410 has an internal space. A processing container 420, a support unit 430, a liquid supply unit 450, and an optical module 460 are disposed in the internal space of the housing 410.

An entrance (not shown) through which the substrate M enters and exits is formed on one side wall of the housing 410. The entrance (not shown) is selectively opened and closed by a door assembly (not shown). The inner wall surface of the housing 410 may be coated with a material that has high corrosion resistance to an etchant, which will be described later.

An airflow control unit 412 is installed on the ceiling of the housing 410. Additionally, the air flow control unit 412 is located above the substrate M supported on the support unit 430. The airflow control unit 412 forms an airflow in the internal space of the housing 410. The air flow control unit 412 may be composed of a fan and a filter. The fan supplies fluid to the internal space of the housing 410. According to one embodiment, the fluid may be outside air. The gas supplied to the inner space of the housing 410 forms a downward airflow in the inner space of the housing 410. The airflow in the inner space of the housing 410 may be adjusted by the gas supplied to the inner space of the housing 410. The airflow formed in the internal space of the housing 410 is exhausted to the outside of the housing 410 through an exhaust unit 440, which will be described later.

The processing vessel 420 may be a bowl with an open upper portion. The processing vessel 420 is arranged to surround a support unit 430, which will be described later. The processing vessel 420 may have a guide wall 422 and a plurality of recovery bins 424, 426, and 428. The guide wall 422 and the recovery containers 424, 426, and 428 may each have a ring shape. The recovery bins 424, 426, and 428 each have recovery spaces 424b, 426b, and 428b for separating different liquids among the liquids used to treat the substrate M. When supplying liquid to the substrate M, the liquid scattered by the rotation of the substrate M flows into the above-mentioned recovery space ( flows into 424b, 426b, and 428b), respectively.

According to one embodiment, the processing container 420 may include a first recovery container 424, a second recovery container 426, and a third recovery container 428.

The first recovery container 424 is arranged to surround the support unit 430, the second recovery container 426 is arranged to surround the first recovery container 424, and the third recovery container 428 is the second recovery container 428. It is arranged to surround the recovery container 426. The first inlet 424a, which flows liquid into the recovery space 424b of the first recovery tank 424, is larger than the second inlet 426a, which flows liquid into the recovery space 426b of the second recovery tank 426. It is located below. Additionally, the second inlet 426a is located below the third inlet 428a through which liquid flows into the recovery space 428b of the third recovery container 428. Liquid discharge pipes 424c, 426c, and 428c for discharging liquid are coupled to each of the recovery containers 424, 426, and 428, respectively. The liquid discharged through the liquid discharge pipes 424c, 426c, and 428c can be reused in an external regeneration system (not shown). The number of recovery containers described above can vary depending on the number of liquids used and the type of liquid to be recovered or disposed of.

A container driver 429 is coupled to one side of the processing container 420. The vessel driver 429 raises and lowers the processing vessel 420 in a direction parallel to the third direction 6. That is, the vessel driver 429 changes the position of the processing vessel 420 and changes the relative position between the processing vessel 420 and the substrate M.

The support unit 430 supports and rotates the substrate M. The support unit 430 may include a body 431, a support pin 433, and a support shaft 435.

The upper surface of the body 431 has a generally circular shape when viewed from above. The upper surface of the body 431 may have a larger diameter than the substrate M. A support pin 433 is disposed at the top of the body 431. The support pin 433 protrudes upward from the upper surface of the body 431. A plurality of support pins 433 may be provided. For example, there may be four support pins 433. Each of the plurality of support pins 433 may be disposed at each corner area of the substrate M having a square shape.

The support pin 433 may have a first side and a second side. For example, the first surface may support the bottom of the corner area of the substrate M, and the second surface may support the side edge of the corner area of the substrate M. Accordingly, the second surface may prevent the substrate M from deviating laterally when the substrate M rotates.

The support axis 435 has a longitudinal direction parallel to the third direction 6. The support shaft 435 may be inserted into an opening formed in the bottom center of the processing vessel 420. One end of the support shaft 435 is coupled to the lower end of the body 431, and the other end is coupled to the shaft driver 437. The shaft driver 437 rotates the support shaft 435 using the third direction 6 as the rotation axis. When the support shaft 435 rotates, the body 431 and the substrate M also rotate. Additionally, the shaft driver 437 can lift and lower the body 431 in a direction parallel to the third direction 6.

The exhaust unit 440 exhausts the atmosphere of the internal space of the housing 410. Exhaust unit 440 may include an exhaust line 442 and a pump 444 . Exhaust line 442 may be connected to the bottom of processing vessel 420. However, it is not limited to this, and the exhaust line 442 may be connected to the bottom of the housing 410. Additionally, the exhaust line 442 may be connected to the bottom of the housing 410 and the bottom of the processing vessel 420, respectively. A pump 444 is installed in the exhaust line 442. The pump 444 applies exhaust pressure (negative pressure) to the interior of the exhaust line 442 and the interior space of the housing 410. Accordingly, the internal atmosphere of the housing 410 is exhausted to the outside of the housing 410. The pump 444 according to one embodiment may be any one of known pumps that apply negative pressure.

The liquid supply unit 450 supplies liquid to the substrate M. The liquid supplied by the liquid supply unit 450 to the substrate M supported on the support unit 430 may include an etchant and a rinse liquid. The etchant according to one embodiment may be an etchant that etch patterns formed on the substrate M. For example, the etchant may be a mixture of ammonia, water, and additives, and a liquid containing hydrogen peroxide. Additionally, the rinse liquid may be deionized water or deionized carbon dioxide water.

The liquid supply unit 450 includes a nozzle 452. A plurality of nozzles 452 may be provided. A plurality of nozzles 452 may supply different types of liquid to the substrate M supported on the support unit 430. Additionally, some of the plurality of nozzles 452 may supply the same type of liquid to the substrate M, but may supply liquids with different composition ratios to the substrate M.

One end of the nozzle 452 is coupled to the fixed body 454, and the other end extends in a direction away from the fixed body 454. According to one embodiment, the other end of the nozzle 452 may extend inclined at a certain angle in a direction toward the substrate M supported on the support unit 430.

The fixed body 454 is coupled to a rotation axis 456 having a longitudinal direction parallel to the third direction 6. One end of the rotation shaft 456 is coupled to the fixed body 454, and the other end is coupled to the rotation driver 458. The rotation driver 458 rotates the rotation axis 456 around the third direction 6. Accordingly, the nozzle 452 may also rotate and move on the horizontal plane to change its position.

The optical module 460 may include an optical cover 470, a head nozzle 480, a moving unit 490, a laser unit 500, an imaging unit 520, and a lighting unit 530.

The optical cover 470 has an installation space inside. The installation space of the optical cover 470 has an environment sealed from the outside. Inside the optical cover 470, a portion of the head nozzle 480, a laser unit 500, an imaging unit 520, and a lighting unit 530 are disposed. The head nozzle 480, laser unit 500, imaging unit 520, and lighting unit 530 are modularized by the optical cover 470.

An opening is formed in the lower portion of the optical cover 470. A part of the head nozzle 480, which will be described later, is inserted into the opening formed in the optical cover 470. Accordingly, the head nozzle 480 is positioned so that a portion of the head nozzle 480 protrudes downward from the bottom of the optical cover 470. The head nozzle 480 may be composed of an objective lens and a barrel. The laser unit 500, which will be described later, radiates laser to the substrate M through the head nozzle 480. Additionally, the imaging unit 520, which will be described later, acquires an image of the substrate M through the head nozzle 480.

The moving unit 490 is coupled to the optical cover 470. The moving unit 490 moves the optical cover 470. The moving unit 490 includes a shaft driver 492 and a shaft 494. The shaft 494 has a longitudinal direction parallel to the third direction 6. One end of the shaft 494 may be coupled to the lower end of the optical cover 470, and the other end of the shaft 494 may be connected to the shaft driver 492. Shaft driver 492 may be a motor. The shaft driver 492 can rotate the shaft 494 in the third direction 6 as the axial direction. Additionally, the shaft driver 492 may be comprised of a plurality of motors. For example, one of the plurality of motors rotates the shaft 494, another motor lifts the shaft 494 in the third direction 6, and another motor is mounted on a guide rail (not shown) and moves the shaft (494). 494) can be moved forward and backward in the first direction (2) or the second direction (4). By the shaft driver 492 described above, the position of the optical cover 470 is changed, and the position of the head nozzle 480 is also changed.

The laser unit 500 irradiates a laser to the substrate (M). The laser unit 500 irradiates a laser to a specific area of the substrate M and locally heats the specific area. The specific area according to one embodiment may be an area where the second pattern P2 is formed.

The laser unit 500 may include an oscillator 502 and an expander 506. The oscillator 502 oscillates a laser. The oscillator 502 oscillates a laser toward the expander 506. The output of the laser oscillated from the oscillator 502 can be adjusted according to process requirements. Additionally, a tilting member 504 may be installed in the oscillator 502. The tilting member 504 can change the oscillation direction of the laser oscillated from the oscillation unit 502 by adjusting the arrangement angle of the oscillation unit 502.

The expander 506 may be composed of a plurality of lenses (not shown). The expander 506 adjusts the distance between the plurality of lenses to change the divergence angle of the laser oscillated from the oscillator 502. Accordingly, the expander 506 can adjust the profile of the laser irradiated to the substrate M by expanding or reducing the diameter of the laser. The expander 506 according to one embodiment may be a variable Beam Expander Telescope (BET). The laser adjusted to a predetermined profile in the expander 506 is transmitted to the lower reflector 510.

The lower reflector 510 is located on the movement path of the laser oscillated from the oscillator 502. Additionally, the lower reflector 510 is positioned to overlap the head nozzle 480 when viewed from above. Additionally, the lower reflector 510 may be tilted at a certain angle so that the laser oscillated from the oscillator 502 is transmitted to the head nozzle 480. Accordingly, the laser oscillated from the oscillator 502 sequentially passes through the expander 506, the lower reflector 510, and the head nozzle 480 and is irradiated as a second pattern (P2).

The imaging unit 520 acquires an image of the substrate M by imaging the substrate M. An image according to one embodiment may be a photo or video. The imaging unit 520 may be a camera module. According to one embodiment, the imaging unit 520 may be an autofocus camera module whose focus is automatically adjusted. The lighting unit 530 provides illumination to the substrate M so that the imaging unit 520 can more easily acquire an image of the substrate M.

The upper reflector 540 may include a first reflector 542, a second reflector 544, and an upper reflector 550.

The first reflector 542 and the second reflector 544 are installed at corresponding heights. The first reflector 542 changes the lighting direction of the lighting unit 530. For example, the first reflector 542 reflects lighting in a direction toward the second reflector 544. The second reflector 544 reflects the light back to the upper reflector 550.

The upper reflector 550 is disposed to overlap the lower reflector 510 when viewed from above. Additionally, the upper reflector 550 is disposed above the lower reflector 510. Additionally, the upper reflector 550 may be tilted at the same angle as the lower reflector 510. Accordingly, the imaging unit 520 may acquire an image of the substrate M through the upper reflector 550 and the head nozzle 480. Additionally, the lighting unit 530 may provide illumination to the substrate M via the first reflector 542, the second reflector 544, the upper reflector 550, and the head nozzle 480. That is, the irradiation direction of the laser irradiated to the substrate M, the imaging direction for acquiring the image of the substrate M, and the illumination direction provided to the substrate M have the same axis.

Below, a substrate processing method according to an embodiment of the present invention will be described. Since the substrate processing method described below is performed in the above-described substrate processing apparatus 1, the reference numerals used in FIGS. 2 to 6 are the same hereinafter. Additionally, the substrate processing method according to one embodiment may be performed by the above-described controller 30 controlling components included in the substrate processing apparatus 1.

7 is a flow chart of a substrate processing method according to one embodiment. Figure 8 is a cross-sectional view schematically showing a process chamber when the processing vessel is located in a first position, according to one embodiment. Figure 9 is a cross-sectional view schematically showing a process chamber when the processing vessel is located in a second position, according to one embodiment. Figure 10 is a table showing the degree of shaking of the liquid film according to factor data.

The substrate processing method according to one embodiment may include a liquid supply step (S10), a liquid film tremor control step (S20), a heating step (S30), and a rinsing step (S40).

In the liquid supply step (S10), liquid is supplied to the substrate (M). More specifically, the liquid supply step (S10) supplies an etchant to the substrate (M). Additionally, in the liquid supply step (S10), an etchant is supplied to the substrate (M) to form a liquid film on the substrate (M). According to one embodiment, in the liquid supply step (S10), the etchant may be supplied to the substrate (M) whose rotation has stopped. When supplying an etchant to a substrate (M) whose rotation has stopped, the etchant supplied to the substrate (M) may be supplied in an amount sufficient to form a liquid film or puddle. For example, the amount of etchant supplied to the substrate M may be such that it covers the entire upper surface of the substrate M, but the etchant does not flow from the substrate M, or even if it flows, the amount may not be large. If necessary, the etchant is supplied to the rotating substrate M, or the etchant is supplied to the entire upper surface of the substrate M while changing the position of the nozzle 452 to form a liquid film or permeate on the substrate M. can form them.

The liquid film tremor control step (S20) may be performed after the liquid supply step (S10). Additionally, the liquid film tremor control step (S20) may be performed before the heating step (S30). However, it is not limited to this, and the liquid film tremor control step (S20) may be continuously performed while the heating step (S30) is performed.

The liquid film tremor control step (S20) controls the tremor of the liquid film formed on the substrate (M). More specifically, in the liquid film tremor control step (S20), the tremor of the liquid film formed on the substrate M is controlled based on factor data affecting the airflow in the internal space of the housing 410. Factor data according to one embodiment may include at least one of the exhaust pressure of the exhaust unit 440, the position of the processing vessel 420, and the amount of fluid supplied to the internal space by the air flow control unit 412. there is.

For example, the higher the exhaust pressure of the exhaust unit 440, the stronger the downward airflow in the internal space. That is, the higher the exhaust pressure of the exhaust unit 440, the more severe the change in airflow in the internal space becomes, and accordingly, the degree of tremor of the liquid film formed on the substrate M may become more severe.

Additionally, the degree of shaking of the liquid film formed on the substrate M may vary depending on the position of the processing container 420. For example, as shown in FIG. 8, when the top of the processing container 420 is located above the top of the substrate M, the rate of airflow flowing into the space between the processing container 420 and the substrate M increases. do. This can be understood as a phenomenon that occurs when the aforementioned exhaust unit 440 is connected to the bottom of the processing vessel 420. In this case, the degree of shaking of the liquid film formed on the substrate M supported by the support unit 430 may intensify. On the other hand, as shown in FIG. 9, when the top of the processing container 420 is located lower than the top of the substrate M, the airflow in the internal space flows into the space between the substrate M and the processing container 420. Floating can be minimized. Accordingly, the degree of shaking of the liquid film may be relatively reduced compared to the case described with reference to FIG. 8.

In addition, the degree of shaking of the liquid film may worsen depending on the amount of airflow (fluid) supplied to the internal space by the airflow control unit 412. As described above, the airflow control unit 412 forms a downward airflow in the internal space, so as the amount of fluid supplied to the internal space by the airflow control unit 412 increases, the airflow in the internal space changes rapidly. Accordingly, the degree of shaking of the liquid film formed on the substrate M may intensify.

Factor data affecting the airflow in the internal space may be data previously stored in the controller 30. The controller 30 may calculate information about the degree of vibration of the liquid film formed on the substrate M according to the previously stored exhaust pressure data of the exhaust unit 440. Additionally, the controller 30 may calculate information about the degree of tremor of the liquid film according to the positional data of the processing vessel 420. Additionally, the controller 30 may calculate information about the degree of liquid film tremor according to data on the airflow supplied to the internal space by the airflow control unit 412.

For example, as shown in FIG. 10, the liquid film formed on the substrate M according to the exhaust pressure of the exhaust unit 440, the position of the processing vessel 420, and the amount of fluid supplied by the air flow adjustment unit 412. The degree of tremor can be calculated by dividing it into the first to fourth states. For example, it can be understood that the degree of tremor of the liquid film formed on the substrate M increases as it moves from the first state to the fourth state. However, this is for illustrative purposes only, and the state of the tremor of the amulet can be further divided and calculated.

Additionally, in the table shown in FIG. 10, it can be understood that the exhaust pressure of the exhaust unit 440 increases from the first exhaust pressure to the third exhaust pressure. Additionally, the case where the processing container 420 is in the first position may be understood as a case where the top of the processing container 420 is located above the top of the substrate M, as shown in FIG. 8 . Additionally, the case where the processing container 420 is in the second position may be understood as a case where the top of the processing container 420 is located below the top of the substrate M, as shown in FIG. 9 . Additionally, when the air flow control unit 412 is turned on, it can be understood as a case where the air flow control unit 412 supplies fluid to the internal space. Additionally, when the air flow control unit 412 is turned off, it can be understood as a case where the air flow control unit 412 does not supply fluid to the internal space.

When the exhaust pressure of the exhaust unit 440 is the first exhaust pressure (eg, 15 Pa), the degree of shaking of the liquid film can be calculated in the first state. On the other hand, when the exhaust pressure of the exhaust unit 440 is the third exhaust pressure (e.g., 180 Pa) greater than the first exhaust pressure while other conditions are the same, the degree of shaking of the liquid film can be calculated in the fourth state. . That is, the lower the exhaust pressure of the exhaust unit 440, the lower the degree of shaking of the liquid film formed on the substrate M.

In addition, when the exhaust pressure of the exhaust unit 440 is the second exhaust pressure and the air flow control unit 412 supplies fluid to the internal space, and the processing container 420 is in the first position, the degree of shaking of the liquid film is set to the second exhaust pressure. It can be calculated in three states. On the other hand, when other conditions remain the same and the processing container 420 is in the second position, the degree of shaking of the liquid film can be calculated in the first state. That is, when the top of the processing container 420 is located below the top of the substrate M, the degree of shaking of the liquid film formed on the substrate M may be lowered.

Accordingly, in the liquid film tremor control step (S20), the position of the processing vessel 420 is changed so that the upper end of the processing vessel 420 is positioned lower than the upper end of the substrate M supported on the support unit 430, so that the substrate ( M) It is possible to lower the tremor of the liquid film formed on the surface. Additionally, in the liquid film tremor control step (S20), the tremor of the liquid film formed on the substrate M can be lowered by reducing the exhaust pressure of the exhaust unit 440. That is, in the substrate processing method according to one embodiment, the heating step (S30) described later is performed with the vibration of the liquid film formed on the substrate M as low as possible in the liquid film tremor control step (S20).

The heating step (S30) heats the substrate (M). More specifically, the laser unit 500 irradiates a laser to a specific area (eg, the second pattern P2) of the substrate M on which the liquid film is formed. The area where the second pattern P2 is formed is locally heated by the irradiated laser. Accordingly, the area where the second pattern P2 is formed may be relatively more etched by the etchant than other areas on the substrate M.

By the laser irradiated locally to the second pattern P2, the line width of the first pattern P1 may change from the first line width (eg, 69 nm) to the target line width (eg, 70 nm). Additionally, the line width of the second pattern P2 may change from the second line width (eg, 68.5 nm) to the target line width (eg, 70 nm). That is, in the heating step (S30), the etching ability for a specific area of the substrate M can be improved and the line width deviation of patterns formed on the substrate M can be minimized.

As described above, in the heating step (S30), a specific area of the substrate (M) on which the liquid film is formed must be heated in detail to etch the specific area. Therefore, when a tremor occurs in the liquid film formed on the substrate (M), the specific area is irradiated. The irradiation path of the laser is changed. For example, when the liquid film vibrates severely, the incident angle of the laser that passes through the liquid film and is irradiated to the substrate M changes. In this case, it is difficult to precisely heat a specific area of the substrate M.

Accordingly, according to the above-described embodiment, before irradiating the laser to a specific area on the substrate M, the degree of shaking of the liquid film formed on the substrate M is minimized, and a specific area of the substrate M is accurately targeted and heated. can do.

In the rinse step (S40), a rinse solution is supplied to the substrate (M). More specifically, in the rinse step (S40), a rinse solution may be supplied to the rotating substrate (M). The rinse liquid supplied to the substrate (M) removes etching impurities generated in the heating step (S30) from the substrate (M). Additionally, the rinse liquid cleans the substrate M by displacing the liquid film formed on the substrate M.

In the above-described embodiment, the heating step (S30) is performed after minimizing the degree of shaking of the liquid film formed on the substrate (M) in the liquid film tremor control step (S20), but is not limited thereto. For example, the controller 30 may calculate information about the degree of tremor of the liquid film based on the current airflow state of the internal space and determine the irradiation position of the laser, which will be described later, based on this information. More specifically, the controller 30 may further calculate information on the expected irradiation position of the laser based on information about the degree of tremor of the liquid film. For example, in a state where there is almost no tremor of the liquid film, when viewed from above, the head nozzle 480 is in a position overlapping with the area where the second pattern P2 is formed, and the laser unit 500 forms the second pattern P2. You can irradiate the laser with (P2). On the other hand, when the degree of tremor of the liquid film is intensified, the head nozzle 480 moves by the distance at which the laser is refracted, and then the laser unit 500 can irradiate the laser in the second pattern P2. In this case, when viewed from above, after the head nozzle 480 moves to a position that deviates from the position where it overlaps the second pattern (P2) by the distance at which the laser is refracted, the laser unit 500 moves to the second pattern (P2). can be irradiated with a laser. That is, based on the calculated information on the expected irradiation position of the laser, the laser can be targeted and irradiated in the second pattern (P2).

The above detailed description is illustrative of the present invention. Additionally, the foregoing is intended to illustrate preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the inventive concept disclosed in this specification, the scope equivalent to the written disclosure, and/or the technology or knowledge in the art. The written examples illustrate the best state for implementing the technical idea of the present invention, and various changes required for specific application fields and uses of the present invention are also possible. Accordingly, the detailed description of the invention above is not intended to limit the invention to the disclosed embodiments. Additionally, the appended claims should be construed to include other embodiments as well.

Substrate: M
Reference mark: AK
Cell: CE
Exposure Pattern: EP
1st pattern: P1
2nd pattern: P2
Process chamber: 400
Airflow supply unit: 412
Processing vessel: 420
Support units: 430
Exhaust unit: 440
Liquid supply unit: 450
Optical module: 460
Head nozzle: 480
Laser Units: 500

Claims (10)

In a device for processing a substrate,
a housing having an interior space;
a support unit supporting the substrate in the internal space;
a processing container surrounding the support unit;
a liquid supply unit that supplies liquid to the substrate supported on the support unit;
an air flow control unit that adjusts the air flow in the internal space;
an exhaust unit that exhausts the atmosphere of the interior space; and
Including a controller,
The controller is,
A substrate processing apparatus that controls the processing vessel, the air flow adjustment unit, and the exhaust unit to control vibration of a liquid film formed on a substrate based on factor data affecting the air flow in the internal space. According to paragraph 1,
The factor data is,
A substrate processing apparatus, characterized in that at least one of the height of the top of the processing vessel, the amount of fluid supplied to the internal space by the air flow control unit, and the exhaust pressure of the exhaust unit. According to paragraph 2,
The device further includes a laser unit that irradiates a laser to the substrate on which the liquid film is formed,
The controller is,
A substrate processing device that controls the laser unit to adjust the irradiation position of the laser according to the degree of tremor of the liquid film. According to paragraph 3,
The substrate is a mask,
The mask has a first pattern and a second pattern that is different from the first pattern,
The first pattern is formed inside the plurality of cells formed on the mask, and the second pattern is formed outside the plurality of cells,
The laser unit is a substrate processing device that irradiates the laser in the second pattern. According to paragraph 1,
The air flow control unit includes a fan and a filter for supplying fluid to the internal space,
The exhaust unit is a substrate processing apparatus including an exhaust line connected to the bottom of the housing and/or the bottom of the processing vessel, and a pump installed in the exhaust line to apply exhaust pressure inside the exhaust line. In the method of processing the substrate,
A liquid supply step of supplying liquid to a substrate to form a liquid film;
After the liquid supply step, a liquid film tremor control step of controlling the tremor of the liquid film; and
A heating step of irradiating a laser to the substrate on which the liquid film is formed to heat a specific pattern formed on the substrate,
In the liquid film tremor control step, the tremor of the liquid film is controlled based on factor data affecting the airflow in the internal space where the substrate is processed,
The factor data is,
A substrate processing method including at least one of a position of a processing vessel surrounding a support unit supporting a substrate, an amount of airflow supplied to the internal space, and an exhaust pressure applied to the internal space. According to clause 6,
In the heating step,
A substrate processing method for adjusting the irradiation position of the laser so that the laser is irradiated in a specific pattern formed on the substrate according to the degree of tremor of the liquid film adjusted in the liquid film tremor control step. In clause 7,
The substrate is a mask,
The mask has a first pattern and a second pattern that is different from the first pattern,
The first pattern is formed inside the plurality of cells formed on the mask, and the second pattern is formed outside the plurality of cells,
A substrate processing method, characterized in that the specific pattern is the second pattern. According to clause 6,
In the amulet tremor control step,
A substrate processing method wherein the top of the processing vessel is positioned lower than the top of the substrate supported on the support unit to reduce vibration of the liquid film. According to clause 6,
In the amulet tremor control step,
A substrate processing method characterized in that the vibration of the liquid film is reduced by reducing the exhaust pressure.

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