KR20240058220A - Organic compound and electroluminescent device comprising the same - Google Patents
Organic compound and electroluminescent device comprising the same Download PDFInfo
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- KR20240058220A KR20240058220A KR1020220138033A KR20220138033A KR20240058220A KR 20240058220 A KR20240058220 A KR 20240058220A KR 1020220138033 A KR1020220138033 A KR 1020220138033A KR 20220138033 A KR20220138033 A KR 20220138033A KR 20240058220 A KR20240058220 A KR 20240058220A
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- 150000002894 organic compounds Chemical class 0.000 title claims abstract description 24
- 239000010410 layer Substances 0.000 claims abstract description 89
- 230000000903 blocking effect Effects 0.000 claims abstract description 36
- 239000012044 organic layer Substances 0.000 claims abstract description 28
- 239000000126 substance Substances 0.000 claims abstract description 15
- 150000001875 compounds Chemical class 0.000 claims description 40
- 125000003118 aryl group Chemical group 0.000 claims description 25
- 238000002347 injection Methods 0.000 claims description 23
- 239000007924 injection Substances 0.000 claims description 23
- 125000001072 heteroaryl group Chemical group 0.000 claims description 19
- 125000001424 substituent group Chemical group 0.000 claims description 16
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical group [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims description 12
- 229910052805 deuterium Chemical group 0.000 claims description 12
- 125000003545 alkoxy group Chemical group 0.000 claims description 11
- 230000005525 hole transport Effects 0.000 claims description 11
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 6
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 125000005843 halogen group Chemical group 0.000 claims description 4
- 125000000592 heterocycloalkyl group Chemical group 0.000 claims description 4
- 125000003277 amino group Chemical group 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 35
- 238000003786 synthesis reaction Methods 0.000 description 35
- -1 1-methylpentyl group Chemical group 0.000 description 34
- 239000000463 material Substances 0.000 description 30
- 238000004519 manufacturing process Methods 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 18
- MFRIHAYPQRLWNB-UHFFFAOYSA-N sodium tert-butoxide Chemical compound [Na+].CC(C)(C)[O-] MFRIHAYPQRLWNB-UHFFFAOYSA-N 0.000 description 13
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 13
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 12
- 239000008096 xylene Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 125000003367 polycyclic group Chemical group 0.000 description 10
- 125000002950 monocyclic group Chemical group 0.000 description 9
- 238000004895 liquid chromatography mass spectrometry Methods 0.000 description 8
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 125000005264 aryl amine group Chemical group 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical group C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- GHQCIALFYKYZGS-UHFFFAOYSA-N dibenzofuran-3-amine Chemical compound C1=CC=C2C3=CC=C(N)C=C3OC2=C1 GHQCIALFYKYZGS-UHFFFAOYSA-N 0.000 description 4
- 125000005842 heteroatom Chemical group 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- GLGNXYJARSMNGJ-VKTIVEEGSA-N (1s,2s,3r,4r)-3-[[5-chloro-2-[(1-ethyl-6-methoxy-2-oxo-4,5-dihydro-3h-1-benzazepin-7-yl)amino]pyrimidin-4-yl]amino]bicyclo[2.2.1]hept-5-ene-2-carboxamide Chemical compound CCN1C(=O)CCCC2=C(OC)C(NC=3N=C(C(=CN=3)Cl)N[C@H]3[C@H]([C@@]4([H])C[C@@]3(C=C4)[H])C(N)=O)=CC=C21 GLGNXYJARSMNGJ-VKTIVEEGSA-N 0.000 description 3
- QIXPSFYLBFVSII-UHFFFAOYSA-N (9-phenylcarbazol-4-yl)boronic acid Chemical compound C12=CC=CC=C2C=2C(B(O)O)=CC=CC=2N1C1=CC=CC=C1 QIXPSFYLBFVSII-UHFFFAOYSA-N 0.000 description 3
- GCTFDMFLLBCLPF-UHFFFAOYSA-N 2,5-dichloropyridine Chemical compound ClC1=CC=C(Cl)N=C1 GCTFDMFLLBCLPF-UHFFFAOYSA-N 0.000 description 3
- MADZFZBLFKSTOR-UHFFFAOYSA-N 4-(4-chlorophenyl)-9-phenylcarbazole Chemical compound ClC1=CC=C(C=C1)C1=C2C(=CC=C1)N(C1=C2C=CC=C1)C1=CC=CC=C1 MADZFZBLFKSTOR-UHFFFAOYSA-N 0.000 description 3
- IYHHRZBKXXKDDY-UHFFFAOYSA-N BI-605906 Chemical compound N=1C=2SC(C(N)=O)=C(N)C=2C(C(F)(F)CC)=CC=1N1CCC(S(C)(=O)=O)CC1 IYHHRZBKXXKDDY-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 3
- SMNRFWMNPDABKZ-WVALLCKVSA-N [[(2R,3S,4R,5S)-5-(2,6-dioxo-3H-pyridin-3-yl)-3,4-dihydroxyoxolan-2-yl]methoxy-hydroxyphosphoryl] [[[(2R,3S,4S,5R,6R)-4-fluoro-3,5-dihydroxy-6-(hydroxymethyl)oxan-2-yl]oxy-hydroxyphosphoryl]oxy-hydroxyphosphoryl] hydrogen phosphate Chemical compound OC[C@H]1O[C@H](OP(O)(=O)OP(O)(=O)OP(O)(=O)OP(O)(=O)OC[C@H]2O[C@H]([C@H](O)[C@@H]2O)C2C=CC(=O)NC2=O)[C@H](O)[C@@H](F)[C@@H]1O SMNRFWMNPDABKZ-WVALLCKVSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 150000001412 amines Chemical group 0.000 description 3
- 239000010405 anode material Substances 0.000 description 3
- 229940125758 compound 15 Drugs 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- DKHNGUNXLDCATP-UHFFFAOYSA-N dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile Chemical compound C12=NC(C#N)=C(C#N)N=C2C2=NC(C#N)=C(C#N)N=C2C2=C1N=C(C#N)C(C#N)=N2 DKHNGUNXLDCATP-UHFFFAOYSA-N 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical group C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 2
- MYKQKWIPLZEVOW-UHFFFAOYSA-N 11h-benzo[a]carbazole Chemical group C1=CC2=CC=CC=C2C2=C1C1=CC=CC=C1N2 MYKQKWIPLZEVOW-UHFFFAOYSA-N 0.000 description 2
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical group C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 2
- 125000005916 2-methylpentyl group Chemical group 0.000 description 2
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical group C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 2
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical group C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 2
- 125000003282 alkyl amino group Chemical group 0.000 description 2
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 125000006267 biphenyl group Chemical group 0.000 description 2
- DMVOXQPQNTYEKQ-UHFFFAOYSA-N biphenyl-4-amine Chemical group C1=CC(N)=CC=C1C1=CC=CC=C1 DMVOXQPQNTYEKQ-UHFFFAOYSA-N 0.000 description 2
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 125000002883 imidazolyl group Chemical group 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 125000002971 oxazolyl group Chemical group 0.000 description 2
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 2
- 125000001484 phenothiazinyl group Chemical group C1(=CC=CC=2SC3=CC=CC=C3NC12)* 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 125000001725 pyrenyl group Chemical group 0.000 description 2
- 125000004076 pyridyl group Chemical group 0.000 description 2
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 125000001935 tetracenyl group Chemical group C1(=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C12)* 0.000 description 2
- 125000001425 triazolyl group Chemical group 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- CAYQIZIAYYNFCS-UHFFFAOYSA-N (4-chlorophenyl)boronic acid Chemical compound OB(O)C1=CC=C(Cl)C=C1 CAYQIZIAYYNFCS-UHFFFAOYSA-N 0.000 description 1
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- 125000000355 1,3-benzoxazolyl group Chemical group O1C(=NC2=C1C=CC=C2)* 0.000 description 1
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical group C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 1
- 125000006218 1-ethylbutyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- WYBQKTWLOQGECX-UHFFFAOYSA-N 2-(3-bromo-5-pyridin-2-ylphenyl)pyridine Chemical compound C=1C(Br)=CC(C=2N=CC=CC=2)=CC=1C1=CC=CC=N1 WYBQKTWLOQGECX-UHFFFAOYSA-N 0.000 description 1
- ONCCVJKFWKAZAE-UHFFFAOYSA-N 2-bromo-9,9'-spirobi[fluorene] Chemical compound C12=CC=CC=C2C2=CC=CC=C2C21C1=CC=CC=C1C1=CC=C(Br)C=C12 ONCCVJKFWKAZAE-UHFFFAOYSA-N 0.000 description 1
- GPTCNPDHDYHZER-UHFFFAOYSA-N 2-chloro-5-phenylpyridine Chemical compound C1=NC(Cl)=CC=C1C1=CC=CC=C1 GPTCNPDHDYHZER-UHFFFAOYSA-N 0.000 description 1
- 125000006176 2-ethylbutyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(C([H])([H])*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000006607 3,3-dimethylbutyloxy group Chemical group 0.000 description 1
- DMEVMYSQZPJFOK-UHFFFAOYSA-N 3,4,5,6,9,10-hexazatetracyclo[12.4.0.02,7.08,13]octadeca-1(18),2(7),3,5,8(13),9,11,14,16-nonaene Chemical group N1=NN=C2C3=CC=CC=C3C3=CC=NN=C3C2=N1 DMEVMYSQZPJFOK-UHFFFAOYSA-N 0.000 description 1
- CELKOWQJPVJKIL-UHFFFAOYSA-N 3-fluoropyridine Chemical compound FC1=CC=CN=C1 CELKOWQJPVJKIL-UHFFFAOYSA-N 0.000 description 1
- AVESHYKDJMFQGJ-UHFFFAOYSA-N 4-bromo-2,6-diphenylpyridine Chemical compound C=1C(Br)=CC(C=2C=CC=CC=2)=NC=1C1=CC=CC=C1 AVESHYKDJMFQGJ-UHFFFAOYSA-N 0.000 description 1
- CBJHFGQCHKNNJY-UHFFFAOYSA-N 4-bromo-9h-carbazole Chemical compound N1C2=CC=CC=C2C2=C1C=CC=C2Br CBJHFGQCHKNNJY-UHFFFAOYSA-N 0.000 description 1
- 125000004920 4-methyl-2-pentyl group Chemical group CC(CC(C)*)C 0.000 description 1
- JAUCIDPGGHZXRP-UHFFFAOYSA-N 4-phenyl-n-(4-phenylphenyl)aniline Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1NC(C=C1)=CC=C1C1=CC=CC=C1 JAUCIDPGGHZXRP-UHFFFAOYSA-N 0.000 description 1
- XVMSFILGAMDHEY-UHFFFAOYSA-N 6-(4-aminophenyl)sulfonylpyridin-3-amine Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=N1 XVMSFILGAMDHEY-UHFFFAOYSA-N 0.000 description 1
- XQNMSKCVXVXEJT-UHFFFAOYSA-N 7,14,25,32-tetrazaundecacyclo[21.13.2.22,5.03,19.04,16.06,14.08,13.020,37.024,32.026,31.034,38]tetraconta-1(36),2,4,6,8,10,12,16,18,20(37),21,23(38),24,26,28,30,34,39-octadecaene-15,33-dione 7,14,25,32-tetrazaundecacyclo[21.13.2.22,5.03,19.04,16.06,14.08,13.020,37.025,33.026,31.034,38]tetraconta-1(37),2,4,6,8,10,12,16,18,20,22,26,28,30,32,34(38),35,39-octadecaene-15,24-dione Chemical compound O=c1c2ccc3c4ccc5c6nc7ccccc7n6c(=O)c6ccc(c7ccc(c8nc9ccccc9n18)c2c37)c4c56.O=c1c2ccc3c4ccc5c6c(ccc(c7ccc(c8nc9ccccc9n18)c2c37)c46)c1nc2ccccc2n1c5=O XQNMSKCVXVXEJT-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- QRMLAMCEPKEKHS-UHFFFAOYSA-N 9,9-dimethyl-n-(4-phenylphenyl)fluoren-2-amine Chemical compound C1=C2C(C)(C)C3=CC=CC=C3C2=CC=C1NC(C=C1)=CC=C1C1=CC=CC=C1 QRMLAMCEPKEKHS-UHFFFAOYSA-N 0.000 description 1
- IVLPUVAQMTXCFW-UHFFFAOYSA-N 9-(1-carbazol-9-yl-4-phenylcyclohexa-2,4-dien-1-yl)carbazole Chemical group C1=CC(N2C3=CC=CC=C3C3=CC=CC=C32)(N2C3=CC=CC=C3C3=CC=CC=C32)CC=C1C1=CC=CC=C1 IVLPUVAQMTXCFW-UHFFFAOYSA-N 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical group C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- ZSIQJIWKELUFRJ-UHFFFAOYSA-N azepane Chemical compound C1CCCNCC1 ZSIQJIWKELUFRJ-UHFFFAOYSA-N 0.000 description 1
- QXNDZONIWRINJR-UHFFFAOYSA-N azocane Chemical compound C1CCCNCCC1 QXNDZONIWRINJR-UHFFFAOYSA-N 0.000 description 1
- 125000003785 benzimidazolyl group Chemical group N1=C(NC2=C1C=CC=C2)* 0.000 description 1
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical group C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 1
- 125000000499 benzofuranyl group Chemical group O1C(=CC2=C1C=CC=C2)* 0.000 description 1
- 125000001164 benzothiazolyl group Chemical group S1C(=NC2=C1C=CC=C2)* 0.000 description 1
- 125000000051 benzyloxy group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])O* 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 125000002676 chrysenyl group Chemical group C1(=CC=CC=2C3=CC=C4C=CC=CC4=C3C=CC12)* 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000004210 cyclohexylmethyl group Chemical group [H]C([H])(*)C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000004851 cyclopentylmethyl group Chemical group C1(CCCC1)C* 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 125000005266 diarylamine group Chemical group 0.000 description 1
- TXCDCPKCNAJMEE-UHFFFAOYSA-N dibenzofuran Chemical group C1=CC=C2C3=CC=CC=C3OC2=C1 TXCDCPKCNAJMEE-UHFFFAOYSA-N 0.000 description 1
- IYYZUPMFVPLQIF-ALWQSETLSA-N dibenzothiophene Chemical group C1=CC=CC=2[34S]C3=C(C=21)C=CC=C3 IYYZUPMFVPLQIF-ALWQSETLSA-N 0.000 description 1
- 125000005509 dibenzothiophenyl group Chemical group 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthene Chemical group C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003037 imidazol-2-yl group Chemical group [H]N1C([*])=NC([H])=C1[H] 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 125000001041 indolyl group Chemical group 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 125000002510 isobutoxy group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])O* 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 1
- 125000005921 isopentoxy group Chemical group 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 1
- 125000000842 isoxazolyl group Chemical group 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- IMKMFBIYHXBKRX-UHFFFAOYSA-M lithium;quinoline-2-carboxylate Chemical compound [Li+].C1=CC=CC2=NC(C(=O)[O-])=CC=C21 IMKMFBIYHXBKRX-UHFFFAOYSA-M 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LCSMGMWMTSWXDD-UHFFFAOYSA-N n-(9,9-dimethylfluoren-2-yl)-9,9-dimethylfluoren-2-amine Chemical compound C1=CC=C2C(C)(C)C3=CC(NC4=CC=C5C6=CC=CC=C6C(C5=C4)(C)C)=CC=C3C2=C1 LCSMGMWMTSWXDD-UHFFFAOYSA-N 0.000 description 1
- 125000006606 n-butoxy group Chemical group 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000006610 n-decyloxy group Chemical group 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001298 n-hexoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000006609 n-nonyloxy group Chemical group 0.000 description 1
- 125000006608 n-octyloxy group Chemical group 0.000 description 1
- 125000003935 n-pentoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003506 n-propoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000005484 neopentoxy group Chemical group 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical group C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 125000001715 oxadiazolyl group Chemical group 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 125000003538 pentan-3-yl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 125000001644 phenoxazinyl group Chemical group C1(=CC=CC=2OC3=CC=CC=C3NC12)* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 125000004592 phthalazinyl group Chemical group C1(=NN=CC2=CC=CC=C12)* 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000005920 sec-butoxy group Chemical group 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000003548 sec-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical group C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000001113 thiadiazolyl group Chemical group 0.000 description 1
- 125000000335 thiazolyl group Chemical group 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- PZJJKWKADRNWSW-UHFFFAOYSA-N trimethoxysilicon Chemical group CO[Si](OC)OC PZJJKWKADRNWSW-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000005580 triphenylene group Chemical group 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D401/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom
- C07D401/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings
- C07D401/04—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings directly linked by a ring-member-to-ring-member bond
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D401/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom
- C07D401/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings
- C07D401/12—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings linked by a chain containing hetero atoms as chain links
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D401/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom
- C07D401/14—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing three or more hetero rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D405/00—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
- C07D405/14—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing three or more hetero rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D409/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms
- C07D409/14—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing three or more hetero rings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/624—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing six or more rings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
본 발명은 하기 [화학식 Ⅰ]로 표시되는 유기 화합물로서, 이를 유기발광소자 내의 유기층, 바람직하게는 전자저지층 등에 채용하는 경우, 발광 효율, 양자 효율 등 발광 특성이 매우 우수한 유기발광소자의 구현이 가능하다.
[화학식 Ⅰ]
The present invention is an organic compound represented by the following [Chemical Formula I], and when it is employed in an organic layer, preferably an electron blocking layer, in an organic light-emitting device, an organic light-emitting device with excellent luminous properties such as luminous efficiency and quantum efficiency can be realized. possible.
[Formula Ⅰ]
Description
본 발명은 유기 화합물에 관한 것으로서, 보다 구체적으로는 유기발광소자 내의 전자저지층 등의 유기층에 채용되는 유기 화합물 및 이를 채용하여 저전압 구동, 장수명, 발광 효율 등의 소자 특성이 현저히 향상된 유기발광소자에 관한 것이다.The present invention relates to organic compounds, and more specifically, to organic compounds employed in organic layers such as electron blocking layers in organic light-emitting devices, and to organic light-emitting devices whose device characteristics, such as low-voltage operation, long life, and luminous efficiency, are significantly improved by employing the same. It's about.
유기발광소자는 투명 기판 위에도 소자를 형성할 수 있을 뿐 아니라, 플라즈마 디스플레이 패널 (Plasma Display Panel)이나 무기전계발광 (EL) 디스플레이에 비해 10 V 이하의 저전압 구동이 가능하고, 전력 소모가 비교적 적으며, 색감이 뛰어나다는 장점이 있고, 녹색, 청색, 적색의 3가지 색을 나타낼 수가 있어 최근에 차세대 디스플레이 소자로 많은 관심의 대상이 되고 있다.Organic light emitting devices not only can be formed on transparent substrates, but also can be driven at low voltages of 10 V or less compared to plasma display panels or inorganic electroluminescence (EL) displays, and consume relatively little power. , It has the advantage of excellent color and can display three colors of green, blue, and red, so it has recently been the subject of much attention as a next-generation display device.
다만, 이러한 유기발광소자가 상기와 같은 특징으로 발휘하기 위해서는 소자 내 유기층을 이루는 물질인 정공주입 물질, 정공수송 물질, 정공저지 물질, 발광 물질, 전자수송 물질, 전자주입 물질, 전자저지 물질 등이 안정하고 효율적인 재료에 의하여 뒷받침되는 것이 선행되어야 하나, 아직까지는 안정하고 효율적인 유기발광소자용 유기층 재료의 개발이 충분히 이루어지지 않은 상태이다.However, in order for this organic light-emitting device to exhibit the above characteristics, the materials that make up the organic layer within the device, such as hole injection material, hole transport material, hole blocking material, light emitting material, electron transport material, electron injection material, and electron blocking material, are required. Support by stable and efficient materials must be a priority, but the development of stable and efficient organic layer materials for organic light-emitting devices has not yet been sufficiently developed.
따라서, 발광 특성을 개선할 수 있는 새로운 재료의 개발과 소자 내 유기층 구조에 대한 개발이 계속 요구되고 있는 실정이다.Therefore, there is a continued need for the development of new materials that can improve luminescence characteristics and the development of organic layer structures within devices.
따라서, 본 발명은 유기발광소자 내의 전자저지층 등의 유기층 재료로 채용되어 저전압 구동 특성과, 장수명, 발광 효율 등의 소자 특성을 현저히 향상시킬 수 있는 유기 화합물 및 이를 포함하는 유기발광소자를 제공하고자 한다.Therefore, the present invention aims to provide an organic compound that can be used as an organic layer material such as an electron blocking layer in an organic light-emitting device to significantly improve device characteristics such as low-voltage driving characteristics, long life, and luminous efficiency, and an organic light-emitting device containing the same. do.
본 발명은 상기 과제를 해결하기 위하여, 하기 [화학식 Ⅰ]로 표시되는 유기 화합물 및 이를 포함하는 유기발광소자를 제공한다.In order to solve the above problems, the present invention provides an organic compound represented by the following [Chemical Formula I] and an organic light-emitting device containing the same.
[화학식 Ⅰ][Formula Ⅰ]
상기 [화학식 Ⅰ]의 구체적인 구조와 이에 의하여 구현되는 구체적인 화합물, 그리고 R1 내지 R2, X1 내지 X4 및 Ar1 내지 Ar3의 정의에 대해서는 후술한다.The specific structure of [Formula I], the specific compounds implemented thereby, and the definitions of R 1 to R 2 , X 1 to X 4 , and Ar 1 to Ar 3 will be described later.
본 발명에 따른 유기 화합물을 전자저지층 등의 유기층에 채용한 유기발광소자는 종래 소자에 비하여 저전압 구동, 장수명 특성, 발광 효율 등의 소자 특성이 현저히 우수하여 다양한 조명 소자 및 디스플레이 소자 등에 유용하게 사용될 수 있다.The organic light-emitting device employing the organic compound according to the present invention in an organic layer such as an electron blocking layer is significantly superior to conventional devices in device characteristics such as low-voltage operation, long lifespan, and luminous efficiency, and can be usefully used in various lighting devices and display devices. You can.
이하, 본 발명을 더욱 상세하게 설명한다.Hereinafter, the present invention will be described in more detail.
본 발명은 유기발광소자 내의 다양한 유기층에, 바람직하게는 전자저지층 등에 채용하는 경우에 저전압 구동, 장수명, 발광 효율 등의 소자 특성이 현저히 향상된 유기발광소자의 구현이 가능한 신규의 유기 화합물에 관한 것으로서, 하기 [화학식 Ⅰ]로 표시되는 것을 특징으로 한다.The present invention relates to a novel organic compound capable of implementing an organic light-emitting device with significantly improved device characteristics such as low-voltage operation, long life, and luminous efficiency when applied to various organic layers in an organic light-emitting device, preferably an electron blocking layer. , It is characterized by being represented by the following [Chemical Formula I].
[화학식 Ⅰ][Formula Ⅰ]
상기 [화학식 Ⅰ]에서,In the above [Chemical Formula I],
Ar1 내지 Ar3은 서로 동일하거나 상이하고 각각 독립적으로 치환 또는 비치환된 탄소수 6 내지 30의 아릴기 및 치환 또는 비치환된 탄소수 3 내지 30의 헤테로아릴기 중에서 선택된다.Ar 1 to Ar 3 are the same or different from each other and are each independently selected from a substituted or unsubstituted aryl group having 6 to 30 carbon atoms and a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms.
X1 내지 X4는 서로 동일하거나 상이하고 각각 독립적으로 CR 또는 N이며, 상기 R은 수소 또는 중수소이다.X 1 to X 4 are the same or different from each other and are each independently CR or N, and R is hydrogen or deuterium.
R1 및 R2는 각각 독립적으로 수소 또는 중수소이며, m은 0 내지 4의 정수이고, n은 0 내지 3의 정수이며, 상기 m 및 n이 각각 2 이상인 경우 복수 개의 R1 및 R2는 각각 서로 동일하거나 상이하다.R 1 and R 2 are each independently hydrogen or deuterium, m is an integer from 0 to 4, n is an integer from 0 to 3, and when m and n are each 2 or more, a plurality of R 1 and R 2 are each are the same or different from each other.
본 발명에 따른 [화학식 Ⅰ]로 표시되는 화합물은 질소 (N) 포함 헤테로아릴기를 [화학식 Ⅰ] 구조 내에 포함하는 것을 구조적 특징으로 한다.The compound represented by [Formula I] according to the present invention is structurally characterized in that it contains a nitrogen (N)-containing heteroaryl group in the [Formula I] structure.
이에 따라 상기 X1 내지 X4 중 적어도 하나 이상이 N이고, 나머지는 CR (R은 수소 또는 중수소)일 수 있으며, 본 발명의 일 실시예에 의하면 상기 X1 내지 X4 중 어느 하나가 N이고, 나머지는 CR (R은 수소 또는 중수소)일 수 있다.Accordingly , at least one of X 1 to , the remainder may be CR (R is hydrogen or deuterium).
또한, 이에 따라 상기 X1 내지 X4가 모두 CR (R은 수소 또는 중수소임)인 경우에는 상기 Ar1 내지 Ar3 중 적어도 하나 이상이 상기 Ar1 내지 Ar3의 구조 내에 질소 (N) 포함 헤테로아릴기를 포함하는 것을 특징으로 한다.In addition , according to this , when all of X 1 to It is characterized by containing an aryl group.
본 발명의 일 실시예에 의하면, 상기 X1 내지 X4가 모두 CR (R은 수소 또는 중수소임)인 경우, 상기 Ar1 내지 Ar3 중 적어도 하나 이상은 상기 Ar1 내지 Ar3의 구조 내에 피리딘일기를 포함하는 것을 특징으로 한다.According to one embodiment of the present invention, when all of X 1 to X 4 are CR (R is hydrogen or deuterium), at least one of Ar 1 to Ar 3 is pyridine in the structure of Ar 1 to Ar 3 It is characterized by including a diary.
한편, 상기 Ar1 내지 Ar3의 정의에서, 치환 또는 비치환이란 상기 Ar1 내지 Ar3은 각각 중수소, 시아노기, 할로겐기, 히드록시기, 니트로기, 알킬기, 알콕시기, 할로겐화된 알킬기, 할로겐화된 알콕시기, 시클로알킬기, 헤테로시클로알킬기, 아릴기, 플루오레닐기, 헤테로아릴기, 실릴기 및 아민기 중에서 선택된 1 또는 2 이상의 치환기로 치환되거나, 상기 치환기 중 2 이상의 치환기가 연결된 치환기로 치환되거나, 또는 어떠한 치환기도 갖지 않는 것을 의미한다.Meanwhile, in the definition of Ar 1 to Ar 3 , substituted or unsubstituted means that Ar 1 to Ar 3 are each selected from the group consisting of deuterium, cyano group, halogen group, hydroxy group, nitro group, alkyl group, alkoxy group, halogenated alkyl group, and halogenated alkoxy group. is substituted with one or two or more substituents selected from a group, cycloalkyl group, heterocycloalkyl group, aryl group, fluorenyl group, heteroaryl group, silyl group and amine group, or is substituted with a substituent in which two or more substituents of the above substituents are connected, or It means not having any substituents.
구체적인 예를 들면, 치환된 아릴기라 함은, 페닐기, 비페닐기, 나프탈렌기, 플루오레닐기, 파이레닐기, 페난트레닐기, 페릴렌기, 테트라세닐기, 안트라센닐기 등이 중수소 등의 다른 치환기로 치환된 것을 의미하고, 치환된 헤테로아릴기라 함은, 피리딜기, 티오페닐기, 트리아진기, 퀴놀린기, 페난트롤린기, 이미다졸기, 티아졸기, 옥사졸기, 카바졸기 및 이들의 축합헤테로고리기, 예컨대 벤즈퀴놀린기, 벤즈이미다졸기, 벤즈옥사졸기, 벤즈티아졸기, 벤즈카바졸기, 디벤조티오페닐기, 디벤조퓨란기 등이 역시 중수소 등의 다른 치환기로 치환된 것을 의미한다.For specific examples, a substituted aryl group refers to a phenyl group, biphenyl group, naphthalene group, fluorenyl group, pyrenyl group, phenanthrenyl group, perylene group, tetracenyl group, anthracenyl group, etc. substituted with another substituent such as deuterium. means, and substituted heteroaryl group refers to pyridyl group, thiophenyl group, triazine group, quinoline group, phenanthroline group, imidazole group, thiazole group, oxazole group, carbazole group and condensed heterocyclic groups thereof, such as This means that benzquinoline group, benzimidazole group, benzoxazole group, benzthiazole group, benzcarbazole group, dibenzothiophenyl group, dibenzofuran group, etc. are also substituted with other substituents such as deuterium.
본 발명에 있어서, 상기 치환기들의 예시들에 대해서 아래에서 구체적으로 설명하나, 이에 한정되는 것은 아니다.In the present invention, examples of the above substituents will be described in detail below, but are not limited thereto.
본 발명에 있어서, 상기 알킬기는 직쇄 또는 분지쇄일 수 있고, 탄소수는 특별히 한정되지 않으나 1 내지 20인 것이 바람직하다. 구체적인 예로는 메틸기, 에틸기, 프로필기, n-프로필기, 이소프로필기, 부틸기, n-부틸기, 이소부틸기, tert-부틸기, sec-부틸기, 1-메틸-부틸기, 1-에틸-부틸기, 펜틸기, n-펜틸기, 이소펜틸기, 네오펜틸기, tert-펜틸기, 헥실기, n-헥실기, 1-메틸펜틸기, 2-메틸펜틸기, 4-메틸-2-펜틸기, 3,3-디메틸부틸기, 2-에틸부틸기, 헵틸기, n-헵틸기, 1-메틸헥실기, 시클로펜틸메틸기, 시클로헥틸메틸기, 옥틸기, n-옥틸기, tert-옥틸기, 1-메틸헵틸기, 2-에틸헥실기, 2-프로필펜틸기, n-노닐기, 2,2-디메틸헵틸기, 1-에틸-프로필기, 1,1-디메틸-프로필기, 이소헥실기, 2-메틸펜틸기, 4-메틸헥실기, 5-메틸헥실기 등이 있으나, 이들에 한정되지 않는다.In the present invention, the alkyl group may be straight chain or branched, and the number of carbon atoms is not particularly limited, but is preferably 1 to 20. Specific examples include methyl group, ethyl group, propyl group, n-propyl group, isopropyl group, butyl group, n-butyl group, isobutyl group, tert-butyl group, sec-butyl group, 1-methyl-butyl group, 1- Ethyl-butyl group, pentyl group, n-pentyl group, isopentyl group, neopentyl group, tert-pentyl group, hexyl group, n-hexyl group, 1-methylpentyl group, 2-methylpentyl group, 4-methyl- 2-pentyl group, 3,3-dimethylbutyl group, 2-ethylbutyl group, heptyl group, n-heptyl group, 1-methylhexyl group, cyclopentylmethyl group, cyclohexylmethyl group, octyl group, n-octyl group, tert -Octyl group, 1-methylheptyl group, 2-ethylhexyl group, 2-propylpentyl group, n-nonyl group, 2,2-dimethylheptyl group, 1-ethyl-propyl group, 1,1-dimethyl-propyl group , isohexyl group, 2-methylpentyl group, 4-methylhexyl group, 5-methylhexyl group, etc., but is not limited to these.
본 발명에 있어서, 알콕시기는 직쇄 또는 분지쇄일 수 있다. 알콕시기의 탄소수는 특별히 한정되지 않으나, 입체적 방해를 주지 않는 범위인 1 내지 20개인 것이 바람직하다. 구체적으로, 메톡시기, 에톡시기, n-프로폭시기, 이소프로폭시기, i-프로필옥시기, n-부톡시기, 이소부톡시기, tert-부톡시기, sec-부톡시기, n-펜틸옥시기, 네오펜틸옥시기, 이소펜틸옥시기, n-헥실옥시기, 3,3-디메틸부틸옥시기, 2-에틸부틸옥시기, n-옥틸옥시기, n-노닐옥시기, n-데실옥시기, 벤질옥시기, p-메틸벤질옥시기 등이 될 수 있으나, 이에 한정되는 것은 아니다.In the present invention, the alkoxy group may be straight chain or branched chain. The number of carbon atoms in the alkoxy group is not particularly limited, but is preferably 1 to 20, which is within a range that does not cause steric hindrance. Specifically, methoxy group, ethoxy group, n-propoxy group, isopropoxy group, i-propyloxy group, n-butoxy group, isobutoxy group, tert-butoxy group, sec-butoxy group, n-pentyloxy group. , neopentyloxy group, isopentyloxy group, n-hexyloxy group, 3,3-dimethylbutyloxy group, 2-ethylbutyloxy group, n-octyloxy group, n-nonyloxy group, n-decyloxy group , benzyloxy group, p-methylbenzyloxy group, etc., but is not limited thereto.
본 발명에 있어서, 알킬기 및 알콕시기는 각각 중수소화된 알킬기 또는 알콕시기, 할로겐화된 알킬기 또는 알콕시기일 수 있으며, 상기 알킬기 또는 알콕시기가 중수소 또는 할로겐기로 치환된 알킬기 또는 알콕시기를 의미한다.In the present invention, the alkyl group and the alkoxy group may be a deuterated alkyl group or alkoxy group, a halogenated alkyl group, or an alkoxy group, respectively, and the alkyl group or alkoxy group refers to an alkyl group or alkoxy group substituted with a deuterium or halogen group.
본 발명에 있어서, 아릴기는 단환식 또는 다환식일 수 있고, 탄소수는 특별히 한정되지 않으나 6 내지 30인 것이 바람직하며, 또한 시클로알킬 등이 융합된 다환식 아릴기 구조를 포함하고, 단환식 아릴기의 예로는 페닐기, 비페닐기, 터페닐기, 스틸벤기 등이 있고, 다환식 아릴기의 예로는 나프틸기, 안트라세닐기, 페난트레닐기, 파이레닐기, 페릴레닐기, 테트라세닐기, 크라이세닐기, 플루오레닐기, 아세나프타센닐기, 트리페닐렌기, 플루오안트렌기 (fluoranthrene) 등이 있으나, 본 발명의 범위가 이들 예로만 한정되는 것은 아니다.In the present invention, the aryl group may be monocyclic or polycyclic, and the number of carbon atoms is not particularly limited, but is preferably 6 to 30. It also includes a polycyclic aryl group structure fused with cycloalkyl, etc., and the monocyclic aryl group Examples of phenyl group, biphenyl group, terphenyl group, stilbene group, etc. Examples of polycyclic aryl groups include naphthyl group, anthracenyl group, phenanthrenyl group, pyrenyl group, perylenyl group, tetracenyl group, and chrysenyl group. , fluorenyl group, acenaphthacenyl group, triphenylene group, fluoranthrene group, etc., but the scope of the present invention is not limited to these examples.
본 발명에 있어서, 플루오레닐기는 2개의 고리 유기화합물이 1개의 원자를 통하여 연결된 구조로서, 예로는 , , 등이 있다.In the present invention, the fluorenyl group is a structure in which two ring organic compounds are connected through one atom, for example , , etc.
본 발명에 있어서, 플루오레닐기는 열린 플루오레닐기의 구조를 포함하며, 여기서 열린 플루오레닐기는 2개의 고리 유기화합물이 1개의 원자를 통하여 연결된 구조에서 한쪽 고리 화합물의 연결이 끊어진 상태의 구조로서, 예로는 , 등이 있다.In the present invention, the fluorenyl group includes the structure of an open fluorenyl group, where the open fluorenyl group is a structure in which one ring compound is disconnected in a structure where two ring organic compounds are connected through one atom. , for example , etc.
또한, 상기 고리의 탄소원자는 N, S 및 O 중에서 선택되는 어느 하나 이상의 헤테로원자로 치환될 수 있으며, 예로는 , , , 등이 있다.Additionally, the carbon atom of the ring may be substituted with one or more heteroatoms selected from N, S, and O, for example , , , etc.
또한, 본 발명에 있어서, 플루오레닐기는 상기 연결된 구조, 열린구조에 단환 또는 다환의 방향족 고리와 단환 또는 다환의 지환족 고리 등이 더 축합된 구조일 수 있다.Additionally, in the present invention, the fluorenyl group may have a structure in which a monocyclic or polycyclic aromatic ring and a monocyclic or polycyclic alicyclic ring, etc. are further condensed to the above connected structure or open structure.
본 발명에 있어서, 헤테로아릴기는 이종원자로 O, N 또는 S를 포함하는 헤테로고리기로서, 탄소수는 특별히 한정되지 않으나 탄소수 2 내지 30인 것이 바람직하며, 시클로알킬 또는 헤테로시클로알킬 등이 융합된 다환식 헤테로아릴기 구조를 포함하며, 본 발명에서 이의 구체적인 예를 들면, 티오펜기, 퓨란기, 피롤기, 이미다졸기, 티아졸기, 옥사졸기, 옥사디아졸기, 트리아졸기, 피리딜기, 비피리딜기, 피리미딜기, 트리아진기, 트리아졸기, 아크리딜기, 피리다진기, 피라지닐기, 퀴놀리닐기, 퀴나졸린기, 퀴녹살리닐기, 프탈라지닐기, 피리도 피리미디닐기, 피리도 피라지닐기, 피라지노 피라지닐기, 이소퀴놀린기, 인돌기, 카바졸기, 벤조옥사졸기, 벤조이미다졸기, 벤조티아졸기, 벤조카바졸기, 벤조티오펜기, 디벤조티오펜기, 벤조퓨라닐기, 디벤조퓨라닐기, 페난트롤린기, 티아졸릴기, 이소옥사졸릴기, 옥사디아졸릴기, 티아디아졸릴기, 벤조티아졸릴기, 페노티아지닐기, 페녹사진기, 페노티아진기 등이 있으나, 이들에만 한정되는 것은 아니다.In the present invention, the heteroaryl group is a heterocyclic group containing O, N or S as a heteroatom, and the number of carbon atoms is not particularly limited, but is preferably 2 to 30 carbon atoms, and is a polycyclic group fused with cycloalkyl or heterocycloalkyl, etc. It contains a heteroaryl group structure, and specific examples thereof in the present invention include thiophene group, furan group, pyrrole group, imidazole group, thiazole group, oxazole group, oxadiazole group, triazole group, pyridyl group, and bipyridyl group. , pyrimidyl group, triazine group, triazole group, acridyl group, pyridazine group, pyrazinyl group, quinolinyl group, quinazoline group, quinoxalinyl group, phthalazinyl group, pyrido pyrimidinyl group, pyrido pyrazinyl group, pyrazino pyrazinyl group, isoquinoline group, indole group, carbazole group, benzooxazole group, benzoimidazole group, benzothiazole group, benzocarbazole group, benzothiophene group, dibenzothiophene group, benzofuranyl group, Dibenzofuranyl group, phenanthroline group, thiazolyl group, isoxazolyl group, oxadiazolyl group, thiadiazolyl group, benzothiazolyl group, phenothiazinyl group, phenoxazine group, phenothiazine group, etc., but only these It is not limited.
본 발명에 있어서, 실릴기는 비치환된 실릴기 또는 알킬기, 아릴기 등으로 치환된 실릴기로서, 이러한 실릴기의 구체적인 예로는 트리메틸실릴, 트리에틸실릴, 트리페닐실릴, 트리메톡시실릴, 디메톡시페닐실릴, 디페닐메틸실릴, 디페닐비닐실릴, 메틸사이클로뷰틸실릴, 디메틸퓨릴실릴 등을 들 수 있으며, 이에 한정되는 것은 아니다.In the present invention, the silyl group is an unsubstituted silyl group or a silyl group substituted with an alkyl group, an aryl group, etc. Specific examples of such silyl groups include trimethylsilyl, triethylsilyl, triphenylsilyl, trimethoxysilyl, and dimethoxysilyl. Examples include phenylsilyl, diphenylmethylsilyl, diphenylvinylsilyl, methylcyclobutylsilyl, dimethylfurylsilyl, etc., but are not limited thereto.
본 발명에서 사용되는 할로겐기의 구체적인 예로는 플루오르(F), 클로린(Cl), 브롬(Br) 등을 들 수 있다.Specific examples of the halogen group used in the present invention include fluorine (F), chlorine (Cl), and bromine (Br).
본 발명에 있어서, 시클로알킬기는 단환, 다환 및 스피로 알킬 라디칼을 지칭하고, 이를 포함하며, 바람직하게는 탄소수 3 내지 20의 고리 탄소 원자를 함유하는 것으로서, 시클로프로필, 시클로펜틸, 시클로헥실, 비시클로헵틸, 스피로데실, 스피로운데실, 아다만틸 등을 포함하며, 시클로알킬기는 임의로 치환될 수 있다.In the present invention, cycloalkyl groups refer to and include monocyclic, polycyclic and spiro alkyl radicals, and preferably contain ring carbon atoms having 3 to 20 carbon atoms, such as cyclopropyl, cyclopentyl, cyclohexyl, and bicyclo. Includes heptyl, spirodecyl, spiroundecyl, adamantyl, etc., and the cycloalkyl group may be optionally substituted.
본 발명에 있어서, 헤테로시클로알킬기는 하나 이상의 헤테로 원자를 함유하는 방향족 및 비방향족 시클릭 라디칼을 지칭하고, 이를 포함하며, 하나 이상의 헤테로원자는 O, S, N, P, B, Si 및 Se, 바람직하게는 O, N 또는 S로부터 선택되며, 구체적으로 N을 포함하는 경우 아지리딘, 피롤리딘, 피페리딘, 아제판, 아조칸 등일 수 있다.In the present invention, heterocycloalkyl groups refer to and include aromatic and non-aromatic cyclic radicals containing one or more heteroatoms, wherein one or more heteroatoms are O, S, N, P, B, Si and Se, It is preferably selected from O, N or S, and specifically, when it contains N, it may be aziridine, pyrrolidine, piperidine, azepane, azocan, etc.
본 발명에 있어서, 아민기는 -NH2, 알킬아민기, 아릴아민기, 아릴헤테로아릴아민기 등일 수 있고, 아릴아민기는 아릴로 치환된 아민을 의미하고, 알킬아민기는 알킬로 치환된 아민을 의미하는 것이며, 아릴헤테로아릴아민기는 아릴 및 헤테로아릴기로 치환된 아민을 의미하는 것으로서, 아릴아민기의 예로는 치환 또는 비치환된 모노아릴아민기, 치환 또는 비치환된 디아릴아민기, 또는 치환 또는 비치환된 트리아릴아민기가 있고, 상기 아릴아민기 및 아릴헤테로아릴아민기 중의 아릴기 및 헤테로아릴기는 단환식 아릴기, 단환식 헤테로아릴기일 수 있고, 다환식 아릴기, 다환식 헤테로아릴기일 수 있으며, 상기 아릴기, 헤테로아릴기를 2 이상을 포함하는 아릴아민기, 아릴헤테로아릴아민기는 단환식 아릴기(헤테로아릴기), 다환식 아릴기(헤테로아릴기), 또는 단환식 아릴기(헤테로아릴기)와 다환식 아릴기(헤테로아릴기)를 동시에 포함할 수 있다. 또한, 상기 아릴아민기 및 아릴헤테로아릴아민기 중의 아릴기, 헤테로아릴기는 전술한 아릴기, 헤테로아릴기의 예시 중에서 선택될 수 있다.In the present invention, the amine group may be -NH 2 , an alkylamine group, an arylamine group, an arylheteroarylamine group, etc., an arylamine group refers to an amine substituted with aryl, and an alkylamine group refers to an amine substituted with alkyl. The arylheteroarylamine group refers to an amine substituted with aryl and heteroaryl groups. Examples of the arylamine group include a substituted or unsubstituted monoarylamine group, a substituted or unsubstituted diarylamine group, or a substituted or There is an unsubstituted triarylamine group, and the aryl group and heteroaryl group in the arylamine group and arylheteroarylamine group may be a monocyclic aryl group, a monocyclic heteroaryl group, or a polycyclic aryl group or a polycyclic heteroaryl group. and the aryl group, the arylamine group containing two or more heteroaryl groups, and the arylheteroarylamine group include a monocyclic aryl group (heteroaryl group), a polycyclic aryl group (heteroaryl group), or a monocyclic aryl group (heteroaryl group). It may contain both an aryl group) and a polycyclic aryl group (heteroaryl group). In addition, the aryl group and heteroaryl group of the arylamine group and arylheteroarylamine group may be selected from examples of the above-mentioned aryl group and heteroaryl group.
또한, 본 발명에 따른 치환기의 다양한 구체적인 예는 하기 기재된 구체적인 화합물에서 명확하게 확인할 수 있다.Additionally, various specific examples of substituents according to the present invention can be clearly identified in the specific compounds described below.
상기 [화학식 Ⅰ]로 표시되는 본 발명에 따른 유기 화합물은 상술한 바와 같이 그 구조적 특이성으로 인하여 유기발광소자의 유기층으로 사용될 수 있고, 보다 구체적으로는 도입되는 다양한 치환기의 특성에 따라 유기층의 전자저지층 등의 재료로 사용될 수 있다.As described above, the organic compound according to the present invention represented by [Chemical Formula I] can be used as an organic layer of an organic light-emitting device due to its structural specificity, and more specifically, electron blocking of the organic layer depending on the characteristics of various substituents introduced. It can be used as a material for layers, etc.
본 발명에 따른 [화학식 Ⅰ]로 표시되는 화합물의 바람직한 구체예로는 하기 화합물들이 있으나, 이들에만 한정되는 것은 아니다.Preferred specific examples of the compound represented by [Chemical Formula I] according to the present invention include the following compounds, but are not limited to these.
상기와 같은 특징적 골격 구조 및 치환기를 통하여 골격 구조 및 치환기의 고유 특성을 갖는 유기 화합물을 합성할 수 있으며, 예컨대, 유기발광소자의 제조시 각각의 유기층에서 요구하는 조건들을 충족시키는 유기 화합물 물질을 제조할 수 있으며, 특히, 본 발명에 따른 [화학식 Ⅰ]의 화합물을 전자저지층 등에 채용한 경우 소자의 발광 효율 등의 소자 특성을 더욱 향상시킬 수 있다.Through the above-mentioned characteristic skeletal structure and substituents, organic compounds with unique characteristics of the skeletal structure and substituents can be synthesized. For example, when manufacturing an organic light-emitting device, an organic compound material that satisfies the conditions required for each organic layer can be manufactured. In particular, when the compound of [Chemical Formula I] according to the present invention is used in the electron blocking layer, etc., device characteristics such as luminous efficiency of the device can be further improved.
본 발명에 따른 유기 화합물을 이용하여 통상의 제조방법에 따라 유기발광소자에 적용할 수 있다.The organic compound according to the present invention can be applied to an organic light-emitting device according to a conventional manufacturing method.
본 발명의 일 실시예에 따른 유기발광소자는 제1 전극과 제2 전극 및 이 사이에 배치된 유기층을 포함하는 구조로 이루어질 수 있으며, 본 발명에 따른 유기 화합물을 소자의 유기층에 사용한다는 것을 제외하고는 통상의 소자의 제조 방법 및 재료를 사용하여 제조될 수 있다.The organic light emitting device according to an embodiment of the present invention may have a structure including a first electrode, a second electrode, and an organic layer disposed between them, except that the organic compound according to the present invention is used in the organic layer of the device. It can be manufactured using conventional device manufacturing methods and materials.
본 발명에 따른 유기발광소자의 유기층은 단층 구조로 이루어질 수도 있으나, 2층 이상의 유기층이 적층된 다층 구조로 이루어질 수 있다. 예컨대, 정공주입층, 정공수송층, 발광층, 전자수송층, 전자주입층, 전자저지층 등을 포함하는 구조를 가질 수 있다. 그러나, 이에 한정되지 않고 더 적은 수 또는 더 많은 수의 유기층을 포함할 수도 있다.The organic layer of the organic light emitting device according to the present invention may have a single-layer structure, or may have a multi-layer structure in which two or more organic layers are stacked. For example, it may have a structure including a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, an electron blocking layer, etc. However, it is not limited to this and may include fewer or more organic layers.
이와 같이, 본 발명의 일 실시예에 따른 유기발광소자는 양극 상에 형성된 정공주입층, 정공수송층, 발광층 등을 포함할 수 있으며, 또한 정공저지층, 전자주입층, 전자수송층, 전자저지층, 발광보조층 등을 포함할 수 있으며, 이에 한정되는 것은 아니다.As such, the organic light emitting device according to an embodiment of the present invention may include a hole injection layer, a hole transport layer, a light emitting layer, etc. formed on an anode, and may also include a hole blocking layer, an electron injection layer, an electron transport layer, an electron blocking layer, It may include a light emitting auxiliary layer, etc., but is not limited thereto.
따라서, 본 발명에 따른 유기발광소자에서, 상기 유기층은 전자저지층 등을 포함할 수 있고, 상기 층들 중 1층 이상이 상기 [화학식 Ⅰ]로 표시되는 유기 화합물을 포함할 수 있다.Therefore, in the organic light emitting device according to the present invention, the organic layer may include an electron blocking layer, etc., and one or more of the layers may include the organic compound represented by [Chemical Formula I].
또한, 본 발명에 따른 유기발광소자는 스퍼터링 (sputtering)이나 전자빔 증발 (e-beam evaporation)과 같은 PVD (physical vapor deposition) 방법을 이용하여, 기판 상에 금속 또는 전도성을 가지는 금속 산화물 또는 이들의 합금을 증착시켜 양극을 형성하고, 그 위에 정공주입층, 정공수송층, 정공저지층, 발광층, 전자저지층, 전자수송층, 전자저지층 등을 포함하는 유기층을 형성한 후, 그 위에 음극으로 사용할 수 있는 물질을 증착시킴으로써 제조될 수 있다.In addition, the organic light emitting device according to the present invention deposits a metal, a conductive metal oxide, or an alloy thereof on a substrate using a PVD (physical vapor deposition) method such as sputtering or e-beam evaporation. is deposited to form an anode, and an organic layer including a hole injection layer, a hole transport layer, a hole blocking layer, a light-emitting layer, an electron blocking layer, an electron transport layer, an electron blocking layer, etc. is formed thereon, and then an organic layer that can be used as a cathode is formed thereon. It can be manufactured by depositing the material.
이와 같은 방법 외에도, 기판 상에 음극 물질부터 유기층, 양극 물질을 차례로 증착시켜 유기발광소자를 만들 수도 있다. 상기 유기층은 정공주입층, 정공수송층, 정공저지층, 발광층, 전자저지층, 전자수송층, 전자저지층 등을 포함하는 다층 구조일 수도 있으나, 이에 한정되지 않고 단층 구조일 수 있다. 또한, 상기 유기층은 다양한 고분자 소재를 사용하여 증착법이 아닌 솔벤트 프로세스(solvent process), 예컨대 스핀 코팅, 딥 코팅, 닥터 블레이딩, 스크린 프린팅, 잉크젯 프린팅 또는 열 전사법 등의 방법에 의하여 더 적은 수의 층으로 제조할 수 있다.In addition to this method, an organic light-emitting device can also be made by sequentially depositing a cathode material, an organic layer, and an anode material on a substrate. The organic layer may have a multilayer structure including a hole injection layer, a hole transport layer, a hole blocking layer, a light emitting layer, an electron blocking layer, an electron transport layer, an electron blocking layer, etc., but is not limited to this and may have a single layer structure. In addition, the organic layer uses a variety of polymer materials and is formed using a solvent process rather than a deposition method, such as spin coating, dip coating, doctor blading, screen printing, inkjet printing, or thermal transfer, to form a smaller number of layers. It can be manufactured in layers.
양극은 통상 유기층으로 정공주입이 원활할 수 있도록 일함수가 큰 물질이 바람직하다. 본 발명에서 사용될 수 있는 양극 물질의 구체적인 예로는 바나듐, 크롬, 구리, 아연, 금과 같은 금속 또는 이들의 합금, 아연 산화물, 인듐 산화물, 인듐 주석 산화물(ITO), 인듐 아연 산화물(IZO)과 같은 금속 산화물, ZnO:Al 또는 SnO2:Sb와 같은 금속과 산화물의 조합, 폴리(3-메틸티오펜), 폴리[3,4-(에틸렌-1,2-디옥시)티오펜](PEDT), 폴리피롤 및 폴리아닐린과 같은 전도성 고분자 등이 있으나, 이들에만 한정되는 것은 아니다.The anode is usually preferably a material with a large work function to ensure smooth hole injection into the organic layer. Specific examples of anode materials that can be used in the present invention include metals such as vanadium, chromium, copper, zinc, and gold, or alloys thereof, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO). Metal oxides, combinations of metals and oxides such as ZnO:Al or SnO 2 :Sb, poly(3-methylthiophene), poly[3,4-(ethylene-1,2-dioxy)thiophene] (PEDT) , conductive polymers such as polypyrrole and polyaniline, but are not limited to these.
음극은 통상 유기층으로 전자 주입이 용이하도록 일함수가 작은 물질인 것이 바람직하다. 음극 물질의 구체적인 예로는 마그네슘, 칼슘, 나트륨, 칼륨, 타이타늄, 인듐, 이트륨, 리튬, 가돌리늄, 알루미늄, 은, 주석 및 납과 같은 금속 또는 이들의 합금, LiF/Al 또는 LiO2/Al과 같은 다층 구조 물질 등이 있으나, 이들에만 한정되는 것은 아니다.The cathode is generally preferably made of a material with a low work function to facilitate electron injection into the organic layer. Specific examples of cathode materials include metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin and lead, or alloys thereof, multilayers such as LiF/Al or LiO 2 /Al. Structural materials, etc., but are not limited to these.
정공주입층은 낮은 전압에서 양극으로부터 정공을 잘 주입받을 수 있는 물질로서, 정공주입 물질의 HOMO (highest occupied molecular orbital)가 양극 물질의 일함수와 주변 유기층의 HOMO 사이인 것이 바람직하다. 정공주입 물질의 구체적인 예로는 금속 포피린 (porphyrine), 올리고티오펜, 아릴아민 계열의 유기물, 헥사니트릴 헥사아자트리페닐렌, 퀴나크리돈 (quinacridone) 계열의 유기물, 페릴렌 (perylene) 계열의 유기물, 안트라퀴논 및 폴리아닐린과 폴리티오펜 계열의 전도성 고분자 등이 있으나, 이들에만 한정되는 것은 아니다.The hole injection layer is a material that can easily inject holes from the anode at a low voltage. It is preferable that the HOMO (highest occupied molecular orbital) of the hole injection material is between the work function of the anode material and the HOMO of the surrounding organic layer. Specific examples of hole injection materials include metal porphyrine, oligothiophene, arylamine-based organic substances, hexanitrile hexaazatriphenylene, quinacridone-based organic substances, perylene-based organic substances, Examples include anthraquinone, polyaniline, and polythiophene-based conductive polymers, but are not limited to these.
정공수송층은 양극이나 정공주입층으로부터 정공을 수송 받아 발광층으로 옮겨줄 수 있는 물질로 정공에 대한 이동성이 큰 물질이 적합하다. 구체적인 예로는 아릴아민 계열의 유기물, 전도성 고분자, 및 공액 부분과 비공액 부분이 함께 있는 블록 공중합체 등이 있으나, 이들에만 한정되는 것은 아니다.The hole transport layer is a material that can transport holes from the anode or hole injection layer and transfer them to the light emitting layer, and a material with high mobility for holes is suitable. Specific examples include arylamine-based organic materials, conductive polymers, and block copolymers with both conjugated and non-conjugated portions, but are not limited to these.
전자저지층은 전자의 이동을 저지하는 층으로, 정공수송층 위에 형성될 수 있으며, 전자저지층으로는 정공의 수송에는 영향을 미치지 않으면서 전자의 이동을 저지시킬 수 있는 것을 사용할 수 있다. 또한, 상기 전자저지층 상에는 발광층이 형성될 수 있고, 정공저지층, 전자수송층 및 전자주입층이 형성될 수 있다.The electron blocking layer is a layer that blocks the movement of electrons and can be formed on the hole transport layer. An electron blocking layer that can block the movement of electrons without affecting the transport of holes can be used. Additionally, a light-emitting layer may be formed on the electron blocking layer, and a hole blocking layer, an electron transport layer, and an electron injection layer may be formed.
정공저지층은 전자의 수송에는 영향을 미치지 않으면서 정공의 이동을 저지시킬 수 있는 것을 사용할 수 있으며, 이러한 정공저지층의 예로는 TPBi (1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl), BCP (2,9-dimethyl4,7-diphenyl-1,10-phenanthroline), CBP (4,4-bis(N-carbazolyl)-1,1'-biphenyl), PBD (2-(4-biphenyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole), PTCBI (bisbenzimidazo[2,1-a:1',2-b']anthra[2,1,9-def:6,5,10-d'e'f']diisoguinoline-10,21-dione) 또는 BPhen (4,7-diphenyl-1,10-phenanthroline) 등이 있으며, 이에 한정되는 것은 아니다.The hole blocking layer can be used to prevent the movement of holes without affecting the transport of electrons. An example of such a hole blocking layer is TPBi (1,3,5-tri(1-phenyl-1H-benzo). [d]imidazol-2-yl)phenyl), BCP (2,9-dimethyl4,7-diphenyl-1,10-phenanthroline), CBP (4,4-bis(N-carbazolyl)-1,1'-biphenyl ), PBD (2-(4-biphenyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole), PTCBI (bisbenzimidazo[2,1-a:1',2-b']anthra [2,1,9-def:6,5,10-d'e'f']diisoguinoline-10,21-dione) or BPhen (4,7-diphenyl-1,10-phenanthroline), etc. It is not limited.
발광층은 정공수송층과 전자수송층으로부터 정공과 전자를 각각 수송받아 결합시킴으로써 가시광선 영역의 빛을 낼 수 있는 물질로서, 형광이나 인광에 대한 양자효율이 좋은 물질이 바람직하다. 구체적인 예로는 8-히드록시-퀴놀린 알루미늄 착물 (Alq3), 카르바졸 계열 화합물, 이량체화 스티릴 (dimerized styryl) 화합물, BAlq, 10-히드록시벤조 퀴놀린-금속 화합물, 벤족사졸, 벤즈티아졸 및 벤즈이미다졸 계열의 화합물, 폴리(p-페닐렌비닐렌) (PPV) 계열의 고분자, 스피로 (spiro) 화합물, 폴리플루오렌, 루브렌 등이 있으나, 이들에만 한정되는 것은 아니다.The light-emitting layer is a material that can emit light in the visible range by transporting holes and electrons from the hole transport layer and the electron transport layer, respectively, and combining them, and a material with good quantum efficiency for fluorescence or phosphorescence is preferable. Specific examples include 8-hydroxy-quinoline aluminum complex (Alq 3 ), carbazole-based compounds, dimerized styryl compounds, BAlq, 10-hydroxybenzoquinoline-metal compounds, benzoxazole, benzthiazole, and Examples include benzimidazole-based compounds, poly(p-phenylenevinylene) (PPV)-based polymers, spiro compounds, polyfluorene, and rubrene, but are not limited to these.
전자주입층은 음극으로부터 전달된 전자의 주입 효율이 높은 것을 사용할 수 있다. 이러한 전자 주입층의 예로는 리튬 퀴놀레이트(Liq) 등이 있으며, 이에 한정되는 것은 아니다.The electron injection layer can be one that has high injection efficiency of electrons transferred from the cathode. Examples of such electron injection layers include, but are not limited to, lithium quinolate (Liq).
전자수송층은 음극으로부터 전자를 잘 주입 받아 발광층으로 옮겨줄 수 있는 물질로서, 전자에 대한 이동성이 큰 물질이 적합하다. 구체적인 예로는 8-히드록시퀴놀린의 Al 착물, Alq3를 포함한 착물, 유기 라디칼 화합물, 히드록시플라본-금속 착물 등이 있으나, 이들에만 한정되는 것은 아니다.The electron transport layer is a material that can easily receive electrons from the cathode and transfer them to the light emitting layer, and a material with high electron mobility is suitable. Specific examples include, but are not limited to, an Al complex of 8-hydroxyquinoline, a complex containing Alq 3 , an organic radical compound, and a hydroxyflavone-metal complex.
본 발명에 따른 유기발광소자는 사용되는 재료에 따라 전면 발광형, 후면 발광형 또는 양면 발광형일 수 있다.The organic light emitting device according to the present invention may be a front emitting type, a back emitting type, or a double-sided emitting type depending on the material used.
또한, 본 발명에 따른 유기 화합물은 유기 태양 전지, 유기 감광체, 유기 트랜지스터 등을 비롯한 유기전자소자에서도 유기발광소자에 적용되는 것과 유사한 원리로 작용할 수 있다.In addition, the organic compound according to the present invention can function in organic electronic devices, including organic solar cells, organic photoreceptors, organic transistors, etc., on a principle similar to that applied to organic light-emitting devices.
이하, 본 발명의 이해를 돕기 위하여 바람직한 화합물의 합성예 및 소자 실시예를 제시한다. 그러나, 하기의 실시예는 본 발명을 예시하기 위한 것이며, 이에 의하여 본 발명의 범위가 한정되는 것은 아니다.Hereinafter, synthesis examples of preferred compounds and device examples are presented to aid understanding of the present invention. However, the following examples are for illustrating the present invention and are not intended to limit the scope of the present invention.
합성예Synthesis example 1 : 화합물 15의 합성 1: Synthesis of Compound 15
(1) (One) 제조예Manufacturing example 1 : 중간체 15-1의 합성 1: Synthesis of intermediate 15-1
(9-Phenyl-9H-carbazol-4-yl)boronic acid (10.0 g, 0.035 mol), 2,5-dichloropyridine (6.2 g, 0.042 mol), K2CO3 (14.4 g, 0.105 mol), Pd(PPh3)4 (0.8 g, 0.7 mmol)에 toluene 200 mL, ethanol 50 mL, H2O 50 mL를 넣고 6시간 동안 80 ℃에서 교반하여 반응시켰다. 반응 종료 후 추출하여 농축한 후 컬럼 및 재결정하여 <중간체 15-1>을 7.6 g (수율 61.5%) 수득하였다.(9-Phenyl-9H-carbazol-4-yl)boronic acid (10.0 g, 0.035 mol), 2,5-dichloropyridine (6.2 g, 0.042 mol), K 2 CO 3 (14.4 g, 0.105 mol), Pd ( To PPh 3 ) 4 (0.8 g, 0.7 mmol), 200 mL of toluene, 50 mL of ethanol, and 50 mL of H 2 O were added and stirred at 80°C for 6 hours to react. After completion of the reaction, it was extracted, concentrated, and recrystallized with a column to obtain 7.6 g of <Intermediate 15-1> (yield 61.5%).
(2) (2) 제조예Manufacturing example 2 : 화합물 15의 합성 2: Synthesis of Compound 15
중간체 15-1 (10.0 g, 0.028 mol), Bis(9,9-dimethyl-9H-fluoren-7-yl)amine (17.0 g, 0.042 mol), NaOtBu (8.1 g, 0.085 mol), Pd(dba)2 (0.7 g, 1.1 mmol), t-Bu3P (0.5 g, 2.3 mmol)에 Xylene 150 mL를 넣고 4시간 동안 120 ℃에서 교반하여 반응시켰다. 반응 종료 후, 추출하여 농축한 후 컬럼 및 재결정하여 <화합물 15>를 13.8 g (수율 68.0%) 수득하였다.Intermediate 15-1 (10.0 g, 0.028 mol), Bis(9,9-dimethyl-9H-fluoren-7-yl)amine (17.0 g, 0.042 mol), NaOtBu (8.1 g, 0.085 mol), Pd(dba) 2 (0.7 g, 1.1 mmol) and t-Bu 3 P (0.5 g, 2.3 mmol) were mixed with 150 mL of xylene and stirred at 120°C for 4 hours to react. After completion of the reaction, the extract was extracted, concentrated, and then recrystallized with a column to obtain 13.8 g of <Compound 15> (yield 68.0%).
LC/MS: m/z=719[(M)+]LC/MS: m/z=719[(M) + ]
합성예Synthesis example 2 : 화합물 34의 합성 2: Synthesis of Compound 34
(1) (One) 제조예Manufacturing example 1 : 중간체 34-1의 합성 1: Synthesis of intermediate 34-1
3-Aminodibenzofuran (10.0 g, 0.055 mol), 2-Bromo-9,9'-spirobi[fluorene] (32.4 g, 0.082 mol), NaOtBu (15.7 g, 0.164 mol), Pd(dba)2 (1.3 g, 2.2 mmol), t-Bu3P (0.9 g, 4.4 mmol)에 Xylene 150 mL를 넣고 4시간 동안 70 ℃에서 교반하여 반응시켰다. 반응 종료 후, 추출하여 농축한 후 컬럼 및 재결정하여 <중간체 34-1>을 17.5 g (수율 64.4%) 수득하였다.3-Aminodibenzofuran (10.0 g, 0.055 mol), 2-Bromo-9,9'-spirobi[fluorene] (32.4 g, 0.082 mol), NaOtBu (15.7 g, 0.164 mol), Pd(dba) 2 (1.3 g, 2.2 mmol), 150 mL of xylene was added to t-Bu 3 P (0.9 g, 4.4 mmol) and stirred at 70°C for 4 hours to react. After completion of the reaction, the extract was extracted, concentrated, and recrystallized using a column to obtain 17.5 g of <Intermediate 34-1> (yield 64.4%).
(2) (2) 제조예Manufacturing example 2 : 화합물 34의 합성 2: Synthesis of Compound 34
중간체 15-1 (10.0 g, 0.028 mol), 중간체 34-1 (21.1 g, 0.042 mol), NaOtBu (8.1 g, 0.085 mol), Pd(dba)2 (0.7 g, 1.1 mmol), t-Bu3P (0.5 g, 2.3 mmol)에 Xylene 150 mL를 넣고 4시간 동안 120 ℃에서 교반하여 반응시켰다. 반응 종료 후, 추출하여 농축한 후 컬럼 및 재결정하여 <화합물 34>를 16.2 g (수율 70.3%) 수득하였다.Intermediate 15-1 (10.0 g, 0.028 mol), Intermediate 34-1 (21.1 g, 0.042 mol), NaOtBu (8.1 g, 0.085 mol), Pd(dba) 2 (0.7 g, 1.1 mmol), t-Bu 3 150 mL of Xylene was added to P (0.5 g, 2.3 mmol) and stirred at 120°C for 4 hours to react. After completion of the reaction, the extract was extracted, concentrated, and then recrystallized with a column to obtain 16.2 g of <Compound 34> (yield 70.3%).
LC/MS: m/z=815[(M)+]LC/MS: m/z=815[(M) + ]
합성예Synthesis example 3 : 화합물 56의 합성 3: Synthesis of Compound 56
(1) (One) 제조예Manufacturing example 1 : 중간체 56-1의 합성 1: Synthesis of intermediate 56-1
Bis-biphenyl-4-yl-amine (10.0 g, 0.031 mol), 2,5-dichloropyridine (6.9 g, 0.047 mol), NaOtBu (9.0 g, 0.093 mol), Pd(dba)2 (0.7 g, 1.2 mmol), t-Bu3P (0.5 g, 2.5 mmol)에 Xylene 150 mL를 넣고 4시간 동안 70 ℃에서 교반하여 반응시켰다. 반응 종료 후, 추출하여 농축한 후 컬럼 및 재결정하여 <중간체 56-1>을 8.2 g (수율 60.9%) 수득하였다.Bis-biphenyl-4-yl-amine (10.0 g, 0.031 mol), 2,5-dichloropyridine (6.9 g, 0.047 mol), NaOtBu (9.0 g, 0.093 mol), Pd(dba) 2 (0.7 g, 1.2 mmol) ), 150 mL of Xylene was added to t-Bu 3 P (0.5 g, 2.5 mmol) and stirred at 70°C for 4 hours to react. After completion of the reaction, it was extracted, concentrated, and recrystallized with a column to obtain 8.2 g of <Intermediate 56-1> (yield 60.9%).
(2) (2) 제조예Manufacturing example 2 : 화합물 56의 합성 2: Synthesis of Compound 56
(9-Phenyl-9H-carbazol-4-yl)boronic acid (10.0 g, 0.035 mol), 중간체 56-1 (18.1 g, 0.042mol), K2CO3 (14.4 g, 0.105 mol), Pd(OAc)2 (2.0 g, 1.7 mmol), X-Phos (1.7 g, 3.5 mmol), THF 200 mL와 H2O 50 mL를 넣고 70 ℃에서 6시간 동안 교반하여 반응시켰다. 반응 종료 후 추출하여 농축한 후 컬럼 및 재결정하여 <화합물 56>을 13.0 g (수율58.3%) 수득하였다.(9-Phenyl-9H-carbazol-4-yl)boronic acid (10.0 g, 0.035 mol), intermediate 56-1 (18.1 g, 0.042 mol), K 2 CO 3 (14.4 g, 0.105 mol), Pd(OAc ) 2 (2.0 g, 1.7 mmol), After completion of the reaction, the extract was extracted, concentrated, and recrystallized with a column to obtain 13.0 g of <Compound 56> (yield 58.3%).
LC/MS: m/z=639[(M)+]LC/MS: m/z=639[(M) + ]
합성예Synthesis example 4 : 화합물 95의 합성 4: Synthesis of Compound 95
(1) (One) 제조예Manufacturing example 1 : 중간체 95-1의 합성 1: Synthesis of intermediate 95-1
3-Aminodibenzofuran (10.0 g, 0.055 mol), 5'-Bromo-1,1':3',1"-terphenyl (25.3 g, 0.082 mol), NaOtBu (15.7 g, 0.164 mol), Pd(dba)2 (1.3 g, 2.2 mmol), t-Bu3P (0.9 g, 4.4 mmol)에 Xylene 150 mL를 넣고 4시간 동안 70 ℃에서 교반하여 반응시켰다. 반응 종료 후, 추출하여 농축한 후 컬럼하여 <중간체 95-1>을 14.1 g (수율 62.8%) 수득하였다.3-Aminodibenzofuran (10.0 g, 0.055 mol), 5'-Bromo-1,1':3',1"-terphenyl (25.3 g, 0.082 mol), NaOtBu (15.7 g, 0.164 mol), Pd(dba) 2 (1.3 g, 2.2 mmol) and t-Bu 3 P (0.9 g, 4.4 mmol) were mixed with 150 mL of 14.1 g (yield 62.8%) of 95-1> was obtained.
(2) (2) 제조예Manufacturing example 2 : 중간체 95-2의 합성 2: Synthesis of intermediate 95-2
중간체 95-1 (10.0 g, 0.024 mol), 2,5-dichloropyridine (5.4 g, 0.037 mol), NaOtBu (7.0 g, 0.073 mol), Pd(dba)2 (0.6 g, 1.0 mmol), t-Bu3P (0.4 g, 1.9 mmol)에 Xylene 150 mL를 넣고 4시간 동안 120 ℃에서 교반하여 반응시켰다. 반응 종료 후, 추출하여 농축한 후 컬럼 및 재결정하여 <중간체 95-2>를 8.6 g (수율 67.7%) 수득하였다.Intermediate 95-1 (10.0 g, 0.024 mol), 2,5-dichloropyridine (5.4 g, 0.037 mol), NaOtBu (7.0 g, 0.073 mol), Pd(dba) 2 (0.6 g, 1.0 mmol), t-Bu 3 Add 150 mL of Xylene to P (0.4 g, 1.9 mmol) and stir at 120°C for 4 hours to react. After completion of the reaction, the extract was extracted, concentrated, and recrystallized using a column to obtain 8.6 g of <Intermediate 95-2> (yield 67.7%).
(3) (3) 제조예Manufacturing example 3 : 화합물 95의 합성 3: Synthesis of Compound 95
(9-Phenyl-9H-carbazol-4-yl)boronic acid (10.0 g, 0.035 mol), 중간체 95-2 (21.9 g, 0.042mol), K2CO3 (14.4 g, 0.105 mol), Pd(OAc)2 (2.0 g, 1.7 mmol), X-Phos (1.7 g, 3.5 mmol), THF 200 mL와 H2O 50 mL를 넣고 70 ℃에서 6시간 동안 교반하여 반응시켰다. 반응 종료 후 추출하여 농축한 후 컬럼 및 재결정하여 <화합물 95>를 14.9 g (수율 58.6%) 수득하였다.(9-Phenyl-9H-carbazol-4-yl)boronic acid (10.0 g, 0.035 mol), intermediate 95-2 (21.9 g, 0.042 mol), K 2 CO 3 (14.4 g, 0.105 mol), Pd(OAc ) 2 (2.0 g, 1.7 mmol), After completion of the reaction, the extract was extracted, concentrated, and recrystallized with a column to obtain 14.9 g of <Compound 95> (yield 58.6%).
LC/MS: m/z=729[(M)+]LC/MS: m/z=729[(M) + ]
합성예Synthesis example 5 : 화합물 115의 합성 5: Synthesis of Compound 115
(1) (One) 제조예Manufacturing example 1 : 중간체 115-1의 합성 1: Synthesis of intermediate 115-1
4-Aminobiphenyl (10.0 g, 0.059 mol), 2-Chloro-5-phenylpyridine (16.8 g, 0.089 mol), NaOtBu (17.0 g, 0.177 mol), Pd(dba)2 (1.4 g, 2.4 mmol), t-Bu3P (1.0 g, 4.7 mmol)에 Xylene 150 mL를 넣고 4시간 동안 120 ℃에서 교반하여 반응시켰다. 반응 종료 후, 추출하여 농축한 후 컬럼 및 재결정하여 <중간체 115-1>을 14.4 g (수율 75.6%) 수득하였다.4-Aminobiphenyl (10.0 g, 0.059 mol), 2-Chloro-5-phenylpyridine (16.8 g, 0.089 mol), NaOtBu (17.0 g, 0.177 mol), Pd(dba) 2 (1.4 g, 2.4 mmol), t- 150 mL of Xylene was added to Bu 3 P (1.0 g, 4.7 mmol) and stirred at 120°C for 4 hours to react. After completion of the reaction, the extract was extracted, concentrated, and then recrystallized with a column to obtain 14.4 g of <Intermediate 115-1> (yield 75.6%).
(2) (2) 제조예Manufacturing example 2 : 화합물 115의 합성 2: Synthesis of Compound 115
4-(4-Chlorophenyl)-9-phenyl-9H-carbazole (10.0 g, 0.028 mol), 중간체 115-1 (13.7 g, 0.042 mol), NaOtBu (8.2 g, 0.085 mol), Pd(dba)2 (0.7 g, 1.1 mmol), t-Bu3P (0.5 g, 2.3 mmol)에 Xylene 150 mL를 넣고 4시간 동안 120 ℃에서 교반하여 반응시켰다. 반응 종료 후, 추출하여 농축한 후 컬럼 및 재결정하여 <화합물 115>를 12.4 g (수율 68.6%) 수득하였다.4-(4-Chlorophenyl)-9-phenyl-9H-carbazole (10.0 g, 0.028 mol), intermediate 115-1 (13.7 g, 0.042 mol), NaOtBu (8.2 g, 0.085 mol), Pd(dba) 2 ( 0.7 g, 1.1 mmol) and t-Bu 3 P (0.5 g, 2.3 mmol) were added with 150 mL of Xylene and stirred at 120°C for 4 hours to react. After completion of the reaction, the extract was extracted, concentrated, and then recrystallized with a column to obtain 12.4 g of <Compound 115> (yield 68.6%).
LC/MS: m/z=639[(M)+]LC/MS: m/z=639[(M) + ]
합성예Synthesis example 6 : 화합물 153의 합성 6: Synthesis of Compound 153
(1) (One) 제조예Manufacturing example 1 : 중간체 153-1의 합성 1: Synthesis of intermediate 153-1
3-Aminodibenzofuran (10.0 g, 0.055 mol), 4-Bromo-2,6-diphenylpyridine (25.4 g, 0.082 mol), NaOtBu (15.7 g, 0.164 mol), Pd(dba)2 (1.3 g, 2.2 mmol), t-Bu3P (0.9 g, 4.4 mmol)에 Xylene 150 mL를 넣고 4시간 동안 70 ℃에서 교반하여 반응시켰다. 반응 종료 후, 추출하여 농축한 후 컬럼 및 재결정하여 <중간체 153-1>을 14.7 g (수율 65.3%) 수득하였다.3-Aminodibenzofuran (10.0 g, 0.055 mol), 4-Bromo-2,6-diphenylpyridine (25.4 g, 0.082 mol), NaOtBu (15.7 g, 0.164 mol), Pd(dba) 2 (1.3 g, 2.2 mmol), 150 mL of Xylene was added to t-Bu 3 P (0.9 g, 4.4 mmol) and stirred at 70°C for 4 hours to react. After completion of the reaction, the extract was extracted, concentrated, and then recrystallized with a column to obtain 14.7 g of <Intermediate 153-1> (yield 65.3%).
(2) (2) 제조예Manufacturing example 2 : 화합물 153의 합성 2: Synthesis of Compound 153
4-(4-Chlorophenyl)-9-phenyl-9H-carbazole (10.0 g, 0.028 mol), 중간체 153-1 (17.5 g, 0.042 mol), NaOtBu (8.2 g, 0.085 mol), Pd(dba)2 (0.7 g, 1.1 mmol), t-Bu3P (0.5 g, 2.3 mmol)에 Xylene 150 mL를 넣고 4시간 동안 120 ℃에서 교반하여 반응시켰다. 반응 종료 후, 추출하여 농축한 후 컬럼 및 재결정하여 <화합물 153>을 13.8 g (수율 66.9%) 수득하였다.4-(4-Chlorophenyl)-9-phenyl-9H-carbazole (10.0 g, 0.028 mol), intermediate 153-1 (17.5 g, 0.042 mol), NaOtBu (8.2 g, 0.085 mol), Pd(dba) 2 ( 0.7 g, 1.1 mmol) and t-Bu 3 P (0.5 g, 2.3 mmol) were added with 150 mL of Xylene and stirred at 120°C for 4 hours to react. After completion of the reaction, the extract was extracted, concentrated, and then recrystallized with a column to obtain 13.8 g of <Compound 153> (yield 66.9%).
LC/MS: m/z=729[(M)+]LC/MS: m/z=729[(M) + ]
합성예Synthesis example 7 : 화합물 156의 합성 7: Synthesis of Compound 156
(1) (One) 제조예Manufacturing example 1 : 중간체 156-1의 합성 1: Synthesis of intermediate 156-1
3-Aminodibenzofuran (10.0 g, 0.055 mol), 2,2'-(5-Bromo-1,3-phenylene)dipyridine (25.5 g, 0.082 mol), NaOtBu (15.7 g, 0.164 mol), Pd(dba)2 (1.3 g, 2.2 mmol), t-Bu3P (0.9 g, 4.4 mmol)에 Xylene 150 mL를 넣고 4시간 동안 70 ℃에서 교반하여 반응시켰다. 반응 종료 후, 추출하여 농축한 후 컬럼 및 재결정하여 <중간체 156-1>을 14.1 g (수율 62.5%) 수득하였다.3-Aminodibenzofuran (10.0 g, 0.055 mol), 2,2'-(5-Bromo-1,3-phenylene)dipyridine (25.5 g, 0.082 mol), NaOtBu (15.7 g, 0.164 mol), Pd(dba) 2 (1.3 g, 2.2 mmol) and t-Bu 3 P (0.9 g, 4.4 mmol) were added with 150 mL of Xylene and stirred at 70°C for 4 hours to react. After completion of the reaction, the extract was extracted, concentrated, and then recrystallized with a column to obtain 14.1 g of <Intermediate 156-1> (yield 62.5%).
(2) (2) 제조예Manufacturing example 2 : 화합물 156의 합성 2: Synthesis of Compound 156
4-(4-Chlorophenyl)-9-phenyl-9H-carbazole (10.0 g, 0.028 mol), 중간체 156-1 (17.5 g, 0.042 mol), NaOtBu (8.2 g, 0.085 mol), Pd(dba)2 (0.7 g, 1.1 mmol), t-Bu3P (0.5 g, 2.3 mmol)에 Xylene 150 mL를 넣고 4시간 동안 120 ℃에서 교반하여 반응시켰다. 반응 종료 후, 추출하여 농축한 후 컬럼 및 재결정하여 <화합물 156>을 13.6 g (수율 65.8%) 수득하였다.4-(4-Chlorophenyl)-9-phenyl-9H-carbazole (10.0 g, 0.028 mol), intermediate 156-1 (17.5 g, 0.042 mol), NaOtBu (8.2 g, 0.085 mol), Pd(dba) 2 ( 0.7 g, 1.1 mmol) and t-Bu 3 P (0.5 g, 2.3 mmol) were added with 150 mL of Xylene and stirred at 120°C for 4 hours to react. After completion of the reaction, the extract was extracted, concentrated, and then recrystallized with a column to obtain 13.6 g of <Compound 156> (yield 65.8%).
LC/MS: m/z=730[(M)+]LC/MS: m/z=730[(M) + ]
합성예Synthesis example 8 : 화합물 227의 합성 8: Synthesis of compound 227
(1) (One) 제조예Manufacturing example 1 : 중간체 227-1의 합성 1: Synthesis of intermediate 227-1
4-Bromo-9H-carbazole (10.0 g, 0.041 mol), 3-Fluoropyridine (4.7 g, 0.049 mol), Cs2CO3 (8.4 g, 0.061 mol)에 DMF 500 mL을 넣고 150 ℃에서 12시간 동안 환류 교반하여 반응시켰다. 반응 종료 후 추출하여 농축한 후 컬럼하여 <중간체 227-1>을 8.3 g (수율 63.2 %) 수득하였다.Add 500 mL of DMF to 4-Bromo-9H-carbazole (10.0 g, 0.041 mol), 3-Fluoropyridine (4.7 g, 0.049 mol), and Cs 2 CO 3 (8.4 g, 0.061 mol) and reflux at 150°C for 12 hours. The reaction was stirred. After completion of the reaction, the extract was extracted, concentrated, and columnarized to obtain 8.3 g (yield 63.2%) of <Intermediate 227-1>.
(2) (2) 제조예Manufacturing example 2 : 중간체 227-2의 합성 2: Synthesis of intermediate 227-2
중간체 227-1 (10.0 g, 0.031 mol), (4-Chlorophenyl)boronic acid (5.8 g, 0.037 mol), K2CO3 (12.8 g, 0.093 mol), Pd(PPh3)4 (0.7 g, 0.6 mmol)에 toluene 200 mL, ethanol 50 mL, H2O 50 mL를 넣고 6시간 동안 80 ℃에서 교반하여 반응시켰다. 반응 종료 후 추출하여 농축한 후 컬럼 및 재결정하여 <중간체 227-2>를 6.6 g (수율 60.1%) 수득하였다.Intermediate 227-1 (10.0 g, 0.031 mol), (4-Chlorophenyl)boronic acid (5.8 g, 0.037 mol), K 2 CO 3 (12.8 g, 0.093 mol), Pd(PPh 3 ) 4 (0.7 g, 0.6 mmol), 200 mL of toluene, 50 mL of ethanol, and 50 mL of H 2 O were added and stirred at 80°C for 6 hours to react. After completion of the reaction, the extract was extracted, concentrated, and then recrystallized with a column to obtain 6.6 g of <Intermediate 227-2> (yield 60.1%).
(3) (3) 제조예Manufacturing example 3 : 화합물 227의 합성 3: Synthesis of Compound 227
중간체 227-2 (10.0 g, 0.028 mol), 9,9-dimethyl-N-(4-phenylphenyl)fluoren-2-amine (15.3 g, 0.042 mol), NaOtBu (8.1 g, 0.085 mol), Pd(dba)2 (0.7 g, 1.1 mmol), t-Bu3P (0.5 g, 2.3 mmol)에 Xylene 150 mL를 넣고 4시간 동안 120 ℃에서 교반하여 반응시켰다. 반응 종료 후, 추출하여 농축한 후 컬럼 및 재결정하여 <화합물 227>을 13.5 g (수율 70.3%) 수득하였다.Intermediate 227-2 (10.0 g, 0.028 mol), 9,9-dimethyl-N-(4-phenylphenyl)fluoren-2-amine (15.3 g, 0.042 mol), NaOtBu (8.1 g, 0.085 mol), Pd(dba ) 2 (0.7 g, 1.1 mmol) and t-Bu 3 P (0.5 g, 2.3 mmol) were mixed with 150 mL of Xylene and stirred at 120°C for 4 hours to react. After completion of the reaction, the extract was extracted, concentrated, and then recrystallized with a column to obtain 13.5 g of <Compound 227> (yield 70.3%).
LC/MS: m/z=679[(M)+]LC/MS: m/z=679[(M) + ]
소자 device 실시예Example ( ( EBLEBL ))
본 발명에 따른 실시예에서, ITO 투명 전극은 25 mm × 25 mm × 0.7 mm의 유리 기판 위에, ITO 투명 전극이 부착된 ITO 유리 기판을 이용하여, 발광 면적이 2 mm × 2 mm 크기가 되도록 패터닝한 후 세정하였다. 기판을 진공 챔버에 장착한 후 베이스 압력이 1 × 10-6 torr가 되도록 한 후 유기물을 상기 ITO 위에 하기 구조로 유기물과 금속을 증착하였다.In an embodiment according to the present invention, the ITO transparent electrode is patterned so that the light emitting area is 2 mm × 2 mm using an ITO glass substrate to which the ITO transparent electrode is attached on a glass substrate of 25 mm × 25 mm × 0.7 mm. and then washed. After the substrate was mounted in a vacuum chamber and the base pressure was set to 1 × 10 -6 torr, organic materials and metals were deposited on the ITO in the following structure.
소자 device 실시예Example 1 내지 43 1 to 43
본 발명에 따라 구현되는 화합물을 전자저지층에 채용하여, 하기와 같은 소자 구조를 갖는 유기발광소자를 제작 후, 본 발명에 따라 구현되는 화합물이 갖는 발광 및 구동 특성을 측정하였다.The compound implemented according to the present invention was employed in the electron blocking layer to manufacture an organic light-emitting device having the following device structure, and then the light emission and driving characteristics of the compound implemented according to the present invention were measured.
ITO / 정공주입층 (HAT-CN, 5 nm) / 정공수송층 (α-NPB, 100 nm) / 전자저지층 (10 nm) / 발광층 (20 nm) / 전자수송층 (ET1:Liq, 30 nm) / LiF (1 nm) / Al (100 nm)ITO / hole injection layer (HAT-CN, 5 nm) / hole transport layer (α-NPB, 100 nm) / electron blocking layer (10 nm) / emitting layer (20 nm) / electron transport layer (ET1:Liq, 30 nm) / LiF (1 nm) / Al (100 nm)
ITO 투명 전극 상부에 [HAT-CN]을 5 nm 두께로 성막하여 정공주입층을 형성한 후에, α-NPB를 100 nm로 성막하여 정공수송층을 형성하였으며, 하기 [표 1]에 기재된 본 발명에 따른 화합물을 10 nm 두께로 성막하여 전자저지층을 형성하였고, 발광층은 호스트 화합물로 [BH1], 도펀트 화합물로 [BD1]을 사용하여 20 nm로 공증착하여 형성하였다. 이후, 전자수송층 (하기 [ET1] 화합물 Liq 50% 도핑)을 30 nm 증착한 후, LiF를 1 nm의 두께로 성막하여 전자주입층을 형성하였다. 이후, Al을 100 nm의 두께로 성막하여 유기전발광소자를 제작하였다.[HAT-CN] was deposited on the top of the ITO transparent electrode to a thickness of 5 nm to form a hole injection layer, and then α-NPB was deposited to a thickness of 100 nm to form a hole transport layer. According to the present invention described in [Table 1] below, The following compound was deposited to a thickness of 10 nm to form an electron blocking layer, and the light emitting layer was formed by co-depositing to a thickness of 20 nm using [BH1] as a host compound and [BD1] as a dopant compound. Afterwards, 30 nm of an electron transport layer (50% doped with [ET1] compound Liq below) was deposited, and then LiF was deposited to a thickness of 1 nm to form an electron injection layer. Afterwards, an organic light emitting device was manufactured by forming Al into a 100 nm thick film.
소자 device 비교예Comparative example 1 One
소자 비교예 1을 위한 유기발광소자는 상기 실시예 1 내지 43의 소자구조에서 전자저지층에 본 발명에 따른 화합물 대신에 하기 [EB1]을 사용한 것을 제외하고 동일하게 제작하였다.The organic light emitting device for Device Comparative Example 1 was manufactured in the same manner as the device structures of Examples 1 to 43, except that [EB1] below was used instead of the compound according to the present invention in the electron blocking layer.
소자 device 비교예Comparative example 2 2
소자 비교예 2를 위한 유기발광소자는 상기 실시예 1 내지 43의 소자구조에서 전자저지층에 본 발명에 따른 화합물 대신에 하기 [EB2]를 사용한 것을 제외하고 동일하게 제작하였다.The organic light emitting device for Comparative Device Example 2 was manufactured in the same manner as the device structures of Examples 1 to 43, except that [EB2] below was used instead of the compound according to the present invention in the electron blocking layer.
소자 device 비교예Comparative example 3 3
소자 비교예 3을 위한 유기발광소자는 상기 실시예 1 내지 43의 소자구조에서 전자저지층에 본 발명에 따른 화합물 대신에 하기 [EB3]을 사용한 것을 제외하고 동일하게 제작하였다.The organic light emitting device for Device Comparative Example 3 was manufactured in the same manner as the device structures of Examples 1 to 43, except that [EB3] below was used in the electron blocking layer instead of the compound according to the present invention.
실험예Experiment example 1 : 소자 1: element 실시예Example 1 내지 43의 발광 특성 Luminous properties from 1 to 43
상기 실시예 및 비교예에 따라 제조된 유기발광소자에 대해서 Source meter (Model 237, Keithley)와 휘도계 (PR-650, Photo Research)를 이용하여 구동 전압, 전류 효율 및 색좌표를 측정하였고, 1,000 nit 기준의 결과값은 하기 [표 1]과 같다.The driving voltage, current efficiency, and color coordinates of the organic light emitting devices manufactured according to the above examples and comparative examples were measured using a source meter (Model 237, Keithley) and a luminance meter (PR-650, Photo Research), and were measured at 1,000 nit. The standard result values are shown in [Table 1] below.
상기 [표 1]에 나타낸 결과를 살펴보면, 본 발명에 따른 화합물을 유기발광소자 내의 전자저지층에 채용한 경우에 종래 전자저지층 재료로 사용된 화합물로서 본 발명에 따른 화합물의 특징적 구조와 대비되는 화합물을 채용한 소자 (비교예 1 내지 3)에 비하여 저전압 구동 특성과 발광 효율, 양자 효율 등의 발광 특성이 현저히 우수함을 확인할 수 있다.Looking at the results shown in [Table 1], when the compound according to the present invention is employed in the electron blocking layer in an organic light-emitting device, the characteristic structure of the compound according to the present invention as a compound used as a conventional electron blocking layer material is compared with the characteristic structure of the compound according to the present invention. It can be seen that the luminous properties such as low-voltage driving characteristics, luminous efficiency, and quantum efficiency are significantly superior to those of devices employing the compound (Comparative Examples 1 to 3).
[HAT-CN] [α-NPB] [BH1] [BD1] [ET1][HAT-CN] [α-NPB] [BH1] [BD1] [ET1]
[EB1] [EB2] [EB3][EB1] [EB2] [EB3]
Claims (8)
[화학식 Ⅰ]
상기 [화학식 Ⅰ]에서,
Ar1 내지 Ar3은 서로 동일하거나 상이하고 각각 독립적으로 치환 또는 비치환된 탄소수 6 내지 30의 아릴기 및 치환 또는 비치환된 탄소수 3 내지 30의 헤테로아릴기 중에서 선택되는 어느 하나이며,
X1 내지 X4는 서로 동일하거나 상이하고 각각 독립적으로 CR (R은 수소 또는 중수소임) 또는 N이며,
R1 및 R2는 각각 독립적으로 수소 또는 중수소이며, m은 0 내지 4의 정수이고, n은 0 내지 3의 정수이며, 상기 m 및 n이 각각 2 이상인 경우 복수 개의 R1 및 R2는 각각 서로 동일하거나 상이하고,
단, 상기 X1 내지 X4가 모두 CR (R은 수소 또는 중수소임)인 경우, 상기 Ar1 내지 Ar3 중 적어도 하나 이상은 상기 Ar1 내지 Ar3의 구조 내에 헤테로원자 N 포함 헤테로아릴기를 포함한다.Organic compounds represented by the following [Chemical Formula I]:
[Formula Ⅰ]
In the above [Chemical Formula I],
Ar 1 to Ar 3 are the same or different from each other and are each independently selected from a substituted or unsubstituted aryl group having 6 to 30 carbon atoms and a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms,
X 1 to X 4 are the same or different from each other and are each independently CR (R is hydrogen or deuterium) or N,
R 1 and R 2 are each independently hydrogen or deuterium, m is an integer from 0 to 4, n is an integer from 0 to 3, and when m and n are each 2 or more, a plurality of R 1 and R 2 are each are the same or different from each other,
However , when all of X 1 to do.
상기 X1 내지 X4 중 적어도 하나 이상은 N이고, 나머지는 CR (R은 수소 또는 중수소)인 것을 특징으로 하는 유기 화합물.According to paragraph 1,
An organic compound wherein at least one of X 1 to X 4 is N, and the remainder is CR (R is hydrogen or deuterium).
상기 X1 내지 X4가 모두 CR (R은 수소 또는 중수소임)인 경우, 상기 Ar1 내지 Ar3 중 적어도 하나 이상은 상기 Ar1 내지 Ar3의 구조 내에 피리딘일기를 포함하는 것을 특징으로 하는 유기 화합물.According to paragraph 1,
When all of X 1 to compound.
상기 Ar1 내지 Ar3의 정의에서, 치환 또는 비치환이란 상기 Ar1 내지 Ar3은 각각 중수소, 시아노기, 할로겐기, 히드록시기, 니트로기, 알킬기, 알콕시기, 할로겐화된 알킬기, 할로겐화된 알콕시기, 시클로알킬기, 헤테로시클로알킬기, 아릴기, 플루오레닐기, 헤테로아릴기, 실릴기 및 아민기 중에서 선택된 1 또는 2 이상의 치환기로 치환되거나, 상기 치환기 중 2 이상의 치환기가 연결된 치환기로 치환되거나, 또는 어떠한 치환기도 갖지 않는 것을 의미하는 유기 화합물.According to paragraph 1,
In the definition of Ar 1 to Ar 3 , substituted or unsubstituted means that Ar 1 to Ar 3 are respectively deuterium, cyano group, halogen group, hydroxy group, nitro group, alkyl group, alkoxy group, halogenated alkyl group, halogenated alkoxy group, It is substituted with one or two or more substituents selected from a cycloalkyl group, heterocycloalkyl group, aryl group, fluorenyl group, heteroaryl group, silyl group and amine group, or is substituted with a substituent in which two or more of the substituents are connected, or any substituent. An organic compound meaning that it does not have any.
상기 [화학식 Ⅰ]은 하기 [화학식 1] 내지 [화학식 293] 중에서 선택되는 어느 하나인 것을 특징으로 하는 유기 화합물:
According to paragraph 1,
[Formula I] is an organic compound selected from the following [Formula 1] to [Formula 293]:
상기 유기층 중 1 층 이상은 제1항에 따른 [화학식 Ⅰ]로 구현되는 유기 화합물을 하나 이상 포함하는 것을 특징으로 하는 유기발광소자.An organic light-emitting device comprising a first electrode, a second electrode, and one or more organic layers disposed between the first electrode and the second electrode,
An organic light-emitting device, wherein at least one of the organic layers includes at least one organic compound represented by [Chemical Formula I] according to claim 1.
상기 유기층은 전자주입층, 전자수송층, 정공주입층, 정공수송층, 전자저지층, 정공저지층 및 발광층 중 1층 이상을 포함하고,
상기 층들 중 1층 이상이 상기 [화학식 Ⅰ]로 표시되는 유기 화합물을 포함하는 것을 특징으로 하는 유기발광소자.According to clause 6,
The organic layer includes one or more of an electron injection layer, an electron transport layer, a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, and a light emitting layer,
An organic light-emitting device, wherein at least one of the layers includes an organic compound represented by the formula (I).
상기 전자저지층에 상기 [화학식 Ⅰ]로 표시되는 유기 화합물을 포함하는 것을 특징으로 하는 유기발광소자.In clause 7,
An organic light-emitting device comprising an organic compound represented by [Chemical Formula I] in the electron blocking layer.
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