KR20240056359A - Method and device for forming capacitor using wire - Google Patents

Abstract

The present invention relates to manufacturing a capacitor with excellent insulating properties of the insulating layer of the capacitor.
The present invention relates to the production of a very sophisticated capacitor using a photolithographic pattern and a curved surface etching method and device on a two-dimensional circular curved surface with a very small diameter of less than 500 ㎛.
In order to avoid exposure of the insulating layer to high-energy argon ions by the conventional plasma sputtering method, the wire-type capacitor according to the present invention forms an external metal layer using a thermal evaporation (vapor deposition) device with no ion exposure as an alternative. Applying a photosensitive film to a wire with a two-dimensional circular curve of a very small diameter using a spray device, UV masking a two-dimensional circular curve on the photosensitive film of the wire using a photolithography mask formed on the outer surface of the quartz tube, and spraying. A pattern exposing the central metal of the wire through the development of a two-dimensional circular curved photoresist film, the etching of the outer metal layer of a two-dimensional circular curve using a spray spray method, the etching of a two-dimensional circular curved insulating layer using a spray spray method, and the photoresist film removal process using a spray spray method. and provides a device for this. In addition, the external metal layer device according to the present invention provides a thermal evaporation (vapor deposition) machine as a process for protecting the insulating layer.

Description

Method and device for manufacturing capacitor using wire {METHOD AND DEVICE FOR FORMING CAPACITOR USING WIRE}

The present invention is a technology for forming a new concept capacitor with a wire shape by combining an insulating layer and an external metal layer with a metal wire for semiconductor wire bonding. Conventionally, patterning of semiconductors and display devices is a two-dimensional planar patterning process. The present invention relates to a method and device for depositing and patterning the outer metal layer and insulating layer of a wire into a two-dimensional circular curved surface. The present invention includes a method and device for securing the insulation of a capacitor using a thermal evaporation (vapor deposition) method, excluding the conventional sputtering process in the external metal film deposition process, and a method and device for forming a two-dimensional circular curved surface.

With the advent of the 5G era or the future 6G era, semiconductor chips used in high-performance PCs, smartphones, and self-driving cars will require chips with greater integration than the current one. The insertion loss and return loss characteristics of MLCC may make it difficult to meet the requirements of the above products. As an alternative to this, by forming an insulating layer and an external metal layer on the current bonding wire made of metal, superior frequency characteristics can be obtained compared to conventional MLCCs, and the size is smaller than MLCCs, increasing integration, and the manufacturing cost is also low.

US Patent US 7,138,328 B2 discloses a technology for an insulating coating device for bonding wires using a CVD (CHEMICAL VAPOR DEPOSITION) deposition method and an integrated circuit using insulating coated wires. The insulating coating material disclosed in the above patent is an inorganic material such as silicon nitride or silicon oxide, and it is stated that the insulating coating layer can be formed by a method other than CVD, such as a sputtering method, but a capacitor forming method or a patterning method is used. It is not mentioned.

Korean Patent No. 10-1253227 discloses a technology for forming an anti-oxidation layer of copper on the surface of a copper bonding wire using a sputtering method. It is described that the bonding wire is replaced with inexpensive copper instead of expensive gold, and that an oxidation prevention film is coated by sputtering to prevent the surface of the copper bonding wire from being oxidized, but there is no method of forming a capacitor or patterning method. It is not mentioned.

Meanwhile, Japanese Patent Laid-Open No. 10-242194 discloses a bonding wire coated with an insulating film at regular intervals, but does not mention a method of forming a capacitor or a patterning method.

Republic of Korea Patent No. 10-2323557 describes a method of forming an insulating layer using an atomic layer deposition method to prevent mutual shorting between wires, but does not mention a capacitor forming method or a patterning method.

As seen earlier, the technology for forming an insulating layer by coating the insulating layer of a wire-type capacitor in various ways and the method and material for forming the outer metal layer are mentioned, but the length of the capacitor is defined by partially removing the outer metal layer. There are no known attempts to utilize lithographic methods and devices as a way to do this.

Republic of Korea Patent No. 10-2323557 US Patent US 7,138,328 B2 Republic of Korea Patent No. 10-1253227 Japanese Patent Laid-Open No. 10-242194

A capacitor can be formed by forming an insulating layer and an external metal layer on the center (core) metal of a highly conductive semiconductor bonding wire. The element that most seriously affects the reliability of the capacitor is the insulating layer. There are three factors to increase the capacitance of a capacitor. This involves increasing the length of the capacitor, reducing the thickness of the insulating layer, or coating it with an insulating material with a high dielectric constant. However, if the length of the capacitor is increased, the integration decreases, and if the thickness of the insulating layer is decreased, the leakage current increases, and materials with a large dielectric constant are realistically difficult to apply to bonding wires with very small diameters. Among the three factors, the one with the best accessibility to technology development is thinning the thickness of the insulating layer. Thin insulation layers and reliability related to leakage current are in conflict with each other. In the conventional, commonly used sputtering method, exposure to the insulating layer from high-energy argon ions cannot be avoided. If the thickness of the insulating layer is increased to avoid this, the capacitance decreases and the length of the capacitor must be increased, which reduces integration. Alternative technologies need to be developed.

In more detail, the cross-sectional structure of the capacitor consists of a first metal layer, an insulating layer, and a second metal layer, and is generally referred to as a MIM structure (metal-insulator-metal). For example, a bonding wire may be used as the first metal layer, an aluminum oxide film (Al ₂ O ₃ ) may be used as the insulating layer, and aluminum may be used as the second metal layer. What is intended to be proposed as a solution to the problem of the present invention is that all phenomena that may occur when forming the second metal layer must be examined. Commonly, a metal layer is formed using a plasma sputtering method in a semiconductor or display process. The material of the second metal layer can be selected in various ways depending on need, such as aluminum, copper, chrome, aluminum-tin alloy, and silver-tin alloy. In semiconductor device or display device processes, there are many cases where a metal layer is formed on an insulating layer by plasma sputtering. However, what should not be overlooked is that in actual semiconductor device or display device processes, most of the insulating layers that perform the sputtering metal film process after forming the insulating layer are not gate insulating layers or capacitor insulating layers, but interlayer insulating layers or protective films (passivation). The fact is that it is a functional insulating layer. In other words, it is rare to deposit metal on the insulating layer of a capacitor element, which requires the highest reliability, using the plasma sputtering method. The choice of the material of the second metal layer itself (sputtering target material) does not affect the underlying insulating layer. Regardless of the choice of material, depositing the material using the plasma sputtering method affects the lower insulating layer. Argon gas is injected during plasma sputtering. Argon gas becomes argon positive ions by high-energy electrons and is accelerated to high energy by the electric field caused by the cathode of the cathode placed at the bottom of the target. Accelerated argon ions collide with the target material, causing metal atoms to escape and deposited on the sample. Up to this point, argon ions have a positive effect on the function of sputtering, but the direction of acceleration of argon ions is not limited to the target and cathode. If there is a negatively charged area around the cathode, it will accelerate and collide. If the wire coated with the insulating layer is negatively charged, argon ions will accelerate and collide with high energy toward the outer ear. We will now explain why, unfortunately, wires coated with an insulating layer become negatively charged. The wire is transported across the free space of the plasma sputtering chamber. The plasma state pours out a very large number of high-energy electrons. These electrons may ionize neutral argon atoms and may be absorbed mainly by the surrounding ground region. Additionally, the area where high-energy electrons are absorbed may be the insulating layer of the wire. Moreover, since the electrons are in a high energy state, they will be accelerated by the insulating layer and easily absorbed. Moreover, the wire's insulating layer is not connected to the ground but is exposed to the three-dimensional space of the electron-filled plasma. This is a much more severe state of electronic exposure than the case of samples attached to ground electrodes in semiconductor or display processes.

As a result of the above, the wire is negatively charged and is in a state of radiation exposure due to acceleration of argon positive ions. The atomic number of argon is 18, which is greater than 13 for aluminum, the element of the aluminum oxide film, and much greater than 8 for oxygen. Argon ions with high atomic weight can accelerate collisions with aluminum and oxygen atoms, breaking down the interatomic network of the solid. Research results in which argon atoms were discovered in thin films by sputtering prove this. The thickness of the insulating layer formed in the cone-type capacitor is very thin, ranging from 10 to 50 nm. The thinner the material, the greater the capacitance, but it is inevitably vulnerable to exposure to high-energy argon ions. In the exposed insulating layer, many defect sites are formed. The energy band gap around the defect site is lowered, causing a hopping conduction phenomenon (leakage current) in which electrons cross the defect site. This creates a capacitor circuit, and when a voltage is applied, a leakage current occurs between the first metal layer and the second metal layer. Decreases the performance of the capacitor. In summary, the formation of the second metal layer (outer metal layer in the present invention) by plasma methods, especially plasma sputtering, should be avoided and alternative technologies should be developed.

In addition, the outer metal layer and insulating layer formed on the outside of the wire must be removed to expose the central metal to construct the capacitor circuit. However, appropriate technology for this has not been developed to date. Current laser peeling technology cannot precisely process the length of the capacitor, and has several disadvantages, such as the destruction of the insulating layer by laser light and the short circuit caused by debris generated during the laser peeling process. do. Laser ablation technology also poses productivity issues. In addition, a patent for using a bonding wire without etching the insulating layer (Korean Patent Registration No. 10-2323557) has also been proposed, but the insulating layer destroyed during the bonding operation may increase contact resistance. Alternative technologies are needed.

According to one aspect of the present invention, problems with the current technology are identified and alternatives are presented as follows.

First, we present a technology to improve the reliability of wire-type capacitors. It has already been described that when an external metal film is deposited on the outside of an insulating film using a conventional plasma sputtering method, etc., exposure to high-energy argon ions (Ar ⁺ ) cannot be avoided regardless of the composition of the metal film. As an alternative technology, a process method that does not generate argon ions is proposed. The process method presented in the present invention is a thermal evaporation (vapor deposition) method and does not apply any radiation exposure to the insulating layer. Since the vapor pressure is lowered in a vacuum, metal particles can easily evaporate by heating them with resistance heat. Since the metal atoms generated in the thermal evaporator are not in an ionic state, they only have a low evaporation rate depending on the difference in vapor pressure and are not accelerated, so they do not collide with the wire at high speed. Since the thermal evaporation method is not in a plasma state, electrons hardly exist. Therefore, since it carries no charge, it is stable even if positive ions exist. In the present invention, metal must be formed and patterned on an extremely small scale compared to the size of a semiconductor device or display device. The diameter of the bonding wire used in the present invention is only 20 to 500 ㎛. Semiconductor processes and display processes are already widely known as two-dimensional flat processes. The process performed on the wire according to the present invention presents a highly difficult process that requires two-dimensional circular curve deposition, two-dimensional circular curved surface lithography, and two-dimensional circular curved surface etching on the outside with a diameter of 20 to 500 ㎛. .

Now, according to the present invention, a two-dimensional circular surface deposition method is presented. The general thermal evaporation method places metal particles on a boat and then applies resistance heat to vaporize the metal atoms. The direction of steam is almost in the opposite direction of gravity. This is because the metal particles lying in the boat are exposed toward the opposite direction of gravity. If the boat is turned over, the metal pellets will fall to the bottom of the chamber due to gravity. The vacuum thermal evaporation method using a boat is inevitably used only for two-dimensional flat samples due to gravity. The external metal film deposition process according to the present invention was created to solve the dual challenges of protecting the insulating layer and forming a thin film on a two-dimensional circular curved surface. Since the steam generated in the boat is directed upward, a method of rotating the boat is proposed. While vaporizing the metal grains, place the wire on both ends of the thermal evaporator, place tongs on both ends of the wire to fix the wire, and then rotate the tongs on both ends simultaneously clockwise and counterclockwise alternately to separate the wire. A metal film can be deposited uniformly on a two-dimensional circular curved surface. That is, the thermal evaporation method capable of processing two-dimensional curved surfaces according to the present invention is a thermal evaporation method that includes a rotating body that rotates a wire around a coaxial line.

In addition, a two-dimensional curved surface lithography and two-dimensional curved surface etching method according to the present invention is presented. Photolithography and etching processes for semiconductors and display devices are performed on a two-dimensional plane. Two-dimensional surface processes with extremely small diameters have not yet existed. First, the process of applying a photosensitive film to the outside of the wire using a spray device is well applied to a two-dimensional curved surface due to the spray effect. After soft baking the photoresist film at a temperature of 90 degrees, the wire is transferred to the quartz tube. On the outside of the quartz tube, a UV mask is formed on the two-dimensional circular curve of the quartz tube. When a wire coated with a photosensitive film is inserted into the inner diameter of a quartz tube and UV is irradiated uniformly on a two-dimensional circular curved mask, the outer surface of the wire is partially exposed to UV. In the next process, the developer is sprayed with a spray device to develop the photoresist film uniformly on a two-dimensional circular curved surface. In the next process, after performing hard baking at a temperature of 120 degrees, a chemical solution for etching the external metal film is sprayed using a spray device, and the metal film on the two-dimensional circular curved surface is uniformly etched. In the next process, a chemical solution for etching the insulating layer is sprayed using a spray device to uniformly etch the insulating layer on the two-dimensional circular curved surface. The core technology of the present invention is a photolithography technology on a two-dimensional curved surface, a photomask formed on a two-dimensional curved surface of a quartz tube tube, and a thin film etching technology on the outer surface of a wire is a technology of spraying an etching solution.

The capacitor formed on the wire according to the present invention has good insulation characteristics and the etched surface of the capacitor is excellent, making it a high-performance computer IC with low insertion loss and low reflection loss compared to capacitors or MLCCs using the conventional sputtering method. It can be applied to chips, etc. The capacitor according to the present invention can be stored in an array of numerous capacitors along the coaxial line of the wire and applied to a surface mount device (SMT). The capacitor according to the present invention is much simpler and cheaper than the conventional MLCC manufacturing process, so production volume can be dramatically increased.

In the representation of the drawings, the same reference numerals used in different drawings indicate the same items unless otherwise specified.
Figure 1 is a schematic and explanatory diagram of argon ion arcing discharge occurring in metal layer deposition by conventional sputtering.
Figure 2 is a schematic diagram of a thermal evaporator (thermal evaporation evaporator) device for depositing the outer metal layer of a wire-type capacitor according to the present invention.
Figure 3 is an explanatory diagram of the process of patterning the outer metal layer and the insulating layer of the wire-type capacitor according to the present invention.
Figure 4 is a cross-sectional view of the wire in the process of patterning the outer metal layer and insulating layer of the wire-type capacitor according to the present invention.
Figure 5 is a schematic diagram of a photolithography apparatus according to the present invention.
6 is a schematic diagram of the photolithography process according to the present invention.
7 is a schematic diagram of cutting a wire-type capacitor formed according to the present invention.
Figure 8 is an example of application of the wire-type capacitor according to the present invention

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

Weaknesses of wire-type capacitors according to the prior art

We will discuss the sputtering method as a general method of forming an insulating layer on a conventional wire. The sputtering device 10 of FIG. 1 according to the prior art is basically a plasma generating device, and the plasma device contains a large amount of electrons, and this large amount of electrons are removed from the device by passing through a ground electrode. The interior of the sputtering device 10 according to the prior art of FIG. 1 includes a ground electrode 13, a cathode electrode 12 to which a DC voltage is applied, a target material 15 attached to the top of the cathode electrode, and Al. It consists of argon (Ar) gas and a wire (16). There are two spools around which the wire is wound. As the wire is unwound from one spool 11 and the other spool 11-1 winds the wire, a portion of the wire 16 passes inside the sputter chamber. The order of plasma generation is to fill the chamber with argon gas at an appropriate pressure, and when a negative voltage 14 is applied to the cathode electrode 12, high energy electrons (17-1) protrude from the ground electrode. ) are accelerated toward the cathode electrode 12, the accelerated electrons collide with argon atoms and the ionized argon ions (17-2) are accelerated toward the cathode electrode, and the argon ions (Ar ⁺ ) are the target material. The target material that jumps out by hitting (15) evaporates (17-3) and coats the wire (16) with a certain thickness, and the electrons generated as the argon gas is ionized collide with another argon gas, producing a large amount of electrons. It proceeds with (17-4, 17-5) occurring. The problem that occurs when a metal thin film is coated on a wire by sputtering according to the prior art is that some of the large amount of electrons (17-4, 17-5) generated by chain collisions between electrons and argon gas. ) fortunately flows out to the ground electrode (18), but some (17-5) is unfortunately absorbed by the wire (16) passing inside the chamber. Another unfortunate circumstance is that the wire structure 16 passing inside the chamber is coated with an insulator 16-2, such as an aluminum oxide film (Al ₂ O ₃ ), on the outside of the central metal 16-1. The insulator accepts high-energy electrons and destroys the atomic structure of the insulator, gradually accepting more electrons, and the wire then acts as a negatively charged electrode. The wire has a core metal in the center, but because it is surrounded by an insulating film, electrons absorbed by the insulating film only accumulate in the insulating film as the plasma state progresses and cannot escape through the core metal. In the case of thin film manufacturing by sputtering, which is commonly used in the display industry, a large-area glass plate is attached directly to the ground electrode, so when the thin film is formed, electrons easily escape through the ground electrode, so arcing is suppressed, but the thin film is not grounded (Figure 1). In cases such as wires, there is no ground electrode for electrons to escape from. Afterwards, the argon ions scattered around have a positive charge, so they are accelerated (17-6) toward the negatively charged wire, causing significant exposure (17-6) to the insulating film (16-2) of the wire, causing defects inside the insulator ( defect structure (19). A hopping conduction phenomenon occurs in which conductive electrons move from defect site to defect site, causing a short circuit between the outer metal layer and the center metal, causing the capacitor to lose its function. Argon has atomic number 19 and has a larger mass than aluminum (atomic number 13) and oxygen (atomic number 8), which are the elements of the aluminum oxide film. When argon ions (17-6), which have a large mass and are accelerated with high energy, rush into the aluminum oxide film, there is a very high possibility that they will sufficiently disrupt the network of atoms in the aluminum oxide film. Even if a metal film (17-3) is coated on the outside of the exposed insulator, the width of the energy band (19) of the insulator is reduced and the leakage current (19) increases, so the sputtering method according to the prior art has the weakness of deteriorating the performance of the capacitor. Have.

As shown in Figure 1, the capacitance (capacitance) of the wire-type capacitor is given by the equation below.

C _ox = (2πεL) / ln(b/a)

Here, ε; Permittivity of the insulating layer, L; Length of capacitor, b/a; It is the ratio of the radii of the center metal and the insulating layer. As the thickness of the insulating layer decreases, the capacitance increases because the ratio of the inner radius and outer radius of the insulating layer at the center of the central metal decreases. However, accelerated high-energy argon ions can pass through a thin insulating layer and reach the central metal layer, resulting in poor insulating properties. When manufacturing wire-type capacitors with large capacitance, the plasma process using argon gas has an unavoidable reason for not being able to control the leakage current of the insulating layer.

Formation of the outer metal layer of a wire-type capacitor

According to one aspect of the present invention, a wire-type capacitor formed by patterning using a thermal evaporation method and a lithography method is presented. The thermal evaporation method of the present invention was created to compensate for the shortcomings of the wire coating method using the sputtering method according to the prior art described in FIG. 1. To date, there have been no cases of coating a wire using thermal evaporation (evaporation). Thermal evaporation devices can be easily found in the semiconductor industry or display industry, but they only use a flat substrate as the coating object. No method or device has been found for depositing a wire onto a two-dimensional curved surface (circumferential surface) by thermal evaporation. Additionally, no method has been found for lithography by applying a photosensitive film to a wire in a two-dimensional circular curve.

Figure 2 is a schematic diagram of a device for depositing an external metal layer (e.g. Al, Al-Sn alloy, Ag-Sn alloy, etc.) to form a wire-type capacitor according to the present invention, and Figures 3 and 4 are a schematic diagram of the device according to the present invention. This is an embodiment of forming a metal layer through lithography and etching processes, Figure 5 is a schematic diagram of a lithography apparatus according to the present invention, and Figure 6 is an embodiment showing the sequence of the lithography process according to the present invention.

Referring to FIG. 2, it is a schematic diagram of a thermal evaporator 21 for depositing the outer metal layer 20-4 of a wire-type capacitor. The configuration of the thermal evaporation (vapor deposition) device 21 according to the present invention includes the evaporator lower support 21-1, the vacuum chamber upper structure 21-2, and the vacuum pump system 21-3. It is similar to the thermal evaporator system. The thermal evaporator according to the present invention includes a wire bush (20), bush motors (23, 24-1) that rotate the bush, and two wire coils designed to uniformly coat the outer circumference while stopping the transfer of the wire for a certain period of time. Separator plates (21-4, 21-) that separate the entire (25-1, 25-2) wire bush and bush motor from the thermal deposition boat (22-1, 22-1, 22-3) 5) Includes. If the bushes 20, 24, the bush motors 23, 24-1, and the rotors 25-1, 25-2 are not isolated, metal atoms will be coated from the boat, causing malfunction. The central metal 20-3 of the wire 20-2 wound around the bush 20 may be a conductive metal material such as gold, silver, aluminum, aluminum-silver alloy, or aluminum-tin alloy. The insulator 20-4 formed outside the central metal 20-3 with a diameter of 50 to 500 μm is generally made of aluminum oxide (Al ₂ O ₃ ) formed by atomic layer deposition. The material of the insulator coated on the outside of the wire is not within the scope of the present invention.

The thermal evaporation method and device of FIG. 2 according to the present invention will be described sequentially. First, to explain the bushes, there are two bushes (20, 24) around which the wire is wound. The cross section of the wire 20-2 wound around one bush is the center metal and the aluminum oxide layer, and the cross section of the wire wound around the other bush 24 is the center metal, the insulating layer, and the outer metal layer. According to the present invention, an external metal layer 27 is added to the thermal evaporation area 22 disposed in the space between the two bushes. Each bush is coupled to a motor and is controlled by the motors 23 and 24-1 so that the length of the wire unwound from the bush 20 is wound around the bush 24. Next, the transfer process of the wire will be described. After the bush is mounted, the wire (20-2) passes through the first rotating body (25-1) and passes through the pinhole (21-6) of the first separator (21-4). It passes through the pinhole (21-7) of the second separator (21-5), the second rotary body (25-2), and is wound around the bush 24. Next, explaining the deposition process of the external metal layer 27, the wire is connected to the first rotor 25-1 and the second rotor (25-1) between the first pinhole 21-6 and the second pinhole 21-7. Metal vapor atoms 22-4, which are fixed by 25-2) and evaporated from a plurality of boats 22-1, 22-2, and 22-3, are coated on the insulating layer of the wire. Each boat contains metal particles, and the metal atoms are heated and vaporized by resistance heat caused by voltage (DC voltage) applied to both ends of each boat (22-4). The metal grains of the boat according to the present invention may be in an alloy state of aluminum, copper, aluminum-tin, silver-tin, etc. As an example of the present invention, an infrared laser beam may be used in a boat. When explaining the function of the rotating body (25-1, 25-2) according to the present invention, the rotating body rotates the wire (25-8) so that the outer metal layer 27 is formed with a uniform thickness in the direction of the two-dimensional circular curve. It serves as a help to do so. The two rotating bodies (25-2, 25-2) are electrically connected and controlled (26) to simultaneously perform the rotation direction (25-8), rotation speed, and wire binding and unwinding pressure (25-9). The wire binding and unwinding device (25-6) according to the present invention is controlled to rotate clockwise and counterclockwise (25-8) at an appropriate rotation speed while the deposit is vaporized from the boat, thereby forming the outer metal layer 27. It is controlled (26) to coat uniformly in the direction of this two-dimensional circular curve. In a state where the transfer of the wire is stopped, damage to the wire due to torsional stress caused by clockwise and counterclockwise rotation of the rotating body is small enough to be ignored. Because the diameter of the wire is extremely small compared to the length of the wire between the bush and the rotor, the torsional stress is distributed over the length of the wire. Additionally, since the central metal of the wire is a material with good malleability, torsional stress is ignored. After monitoring the deposition thickness in the deposition area 22 (not shown), when a metal layer of an appropriate thickness is confirmed, the motor integrated control device 28 is operated to attach the rotor and the uncoupling device 25-6. The process of releasing (25-9), the process of operating the bush motors (23, 24-1) to transfer a wire of a certain length, and the process of attaching the wire in the rotating body fastening and uncoupling device are controlled continuously. In this process, a metal particle supply device (not shown) is operated in the boats 22-1, 22-2, and 22-3 so that the evaporation of the metal particles in the deposition area 22 does not stop. When coating the outer metal layer to a thickness of 0.1 to 0.5 ㎛ through the repetitive control described above, if the deposition area 22 is continuously transported for 1 day with a size of 2 to 3 m, the outer metal layer can be applied to the wire for several kilometers per day. It is suitable for mass production as it can be coated and wrapped around a bush. The present invention was created to overcome the defect site phenomenon in the insulating layer caused by exposure to argon ions by the sputtering method according to the prior art described above. The thermal evaporation device works on the principle that metal atoms evaporate and attach to the base material. Sputtering has the inherent possibility that high-energy argon ions in the plasma collide with the base material. It is known from many studies that argon ions are contained in the thin film of the base material produced by sputtering. When these argon ions are contained in a metal film, they do not have any significant side effects on the conduction characteristics of electronic devices such as semiconductor devices. However, when the thickness of the insulating layer is made very thin for the purpose of increasing the capacitance of the insulating layer, especially the capacitor, for example, when the thickness of the atomic layer deposition aluminum oxide film is set to 10 to 20 nm, the insulating layer is destroyed by high-energy argon. (16, 19 in Figure 1) are self-explanatory. The thermal evaporation device capable of coating a wire into a two-dimensional circular curve according to the present invention does not contain high-energy argon and does not change the properties of the insulating layer due to the principle that metal atoms absorb and attach to the wire.

Patterning of the outer metal and insulating layers of wire-type capacitors

Referring to FIG. 3 according to the present invention, a method and device for patterning the outer metal layer of a wire are described. Semiconductor processing and display processing are not difficult technologies that involve patterning a two-dimensional plane. The wire of the present invention is a three-dimensional structure, and the surface of the wire is a rounded two-dimensional circular curved surface. Patterning requires a combination of two-dimensional circular curved surface coating technology, rolled two-dimensional circular curved surface exposure technology, and rolled two-dimensional circular curved surface etching technology. The process is very difficult. Furthermore, patterning technology for very small two-dimensional curved surfaces with a diameter of about 5 to 30 ㎛ is very difficult. The patterning technology of the present invention is intended to present a patterning technology that has not yet existed in patents or literature. Figure 3 starts from the wire produced in Figure 2 (24 in Figure 2) according to the present invention. The system configuration of FIG. 3 is divided into three areas: a wire patterning system 30, a bush and a motor 31 on which a wire is wound as a base material to be patterned, and a bush and a motor 32 on which the patterned wire is wound. It consists of an integrated control device (39) that controls the brush motors 31 and 32 and controls the entire system. The two-dimensional circular curved patterning system area 30 is divided into a two-dimensional circular curved spray photoresist coating chamber 34 on the wire, a Kim Gwang-mak soft baking chamber 35, a UV masking and UV irradiation chamber 36, and a photoresist film. It consists of a multi-purpose chamber 37 for development, hard baking, etching of the external metal layer, etching of the insulating layer, and photosensitive film removal, and finally a heat stabilization chamber 38. Chamber 37 is a multi-purpose chamber that sequentially performs spray and oven functions.

Describing the process sequence of the patterning system according to the present invention, the control device 39 is electrically adjusted so that the length of the wire unwound from the bush and motor system 31 is wound on the motor 32. The cross-sectional view 33 of the wire of the bush 31-1 before patterning shows the insulating layer 20-4 on the outside of the central metal 20-3, which is the cross-section of the wire provided in FIG. 2 according to the present invention, and the insulating layer 20-4. Of course, it is the same as the outer metal layer 27 deposited on the outside in FIG. 2. That is, the present invention emphasizes that FIGS. 2 and 3 are connected through a continuous process. Patterning according to the present invention ultimately involves patterning the outer metal layer and insulating layer of the two-dimensional circular curved surface by lithography and spray etching. Each chamber of the patterning system of the present invention all has the same size (length) L. This is because the length of the previously processed process must be transferred to the next chamber. As an example, the photoresist coating length is L shown at 34 in FIG. 3. The length L is transferred to the next step, the soft baking chamber. The length L according to the present invention may be approximately 2 m to 4 m. According to the procedure of the present invention, the wire unwound from the bush 31-1 is sprayed with photoresist liquid from the spray devices 34-1 and 34-2 in the first process of the patterning area 30 to form an outer metal layer of the wire. A photosensitive film (34-3) with a thickness of about 1 ㎛ is coated on the two-dimensional circular curved surface of (27), and then transferred to the next step, the soft baking oven (35), and then heated for 90 minutes using the resistance heat heating method (35-1). It is maintained at ℃ for 10 minutes, and is transferred to the next step, the UV irradiation chamber 36, and irradiated on the mask 36-2 in the form of a two-dimensional circular curve with a UV lamp 36-1 (FIG. 5 and is explained in detail in FIG. 6), and is transferred to the next step, the multipurpose chamber 37, which comprehensively processes development, hard baking, and etching, and develops the photoresist film using a spray method 37-1. 2, 37-5: cross-section of the developed photoresist film), hard baking the photoresist film at 120 degrees (℃) for 10 minutes in the same chamber (not shown), and spraying the outside of the two-dimensional circular curve in the same chamber. The patterning work is completed by etching the metal layer and the insulating layer (37-3, 37-6: external metal layer and insulating layer etched cross-section) and removing the photosensitive film (37-4) in the same chamber. The spray device 37-1 of the etching chamber 37 has the function of spraying the developer, cleaning the remaining developer by spraying pure water (DI water), and performing hard baking by blowing warm air at 120 degrees Celsius. A function to spray a chemical solution for etching the external metal layer, a function to spray pure water for cleaning the chemical solution used to etch the external metal layer, a function to spray a chemical solution for etching the insulating layer, and a chemical solution to etch the insulating layer. It performs the function of cleaning, spraying a chemical solution to remove the photosensitive film, and finally, spraying pure water to clean the chemical solution for removing the photosensitive film. After the outer metal layer and the insulating layer are etched, the wire is finally transferred to the thermal stabilization chamber 38, maintained for 10 minutes under resistance heat 38-1, and then wound into a bush 32-2.

It is claimed that the etching of the outer metal layer and insulating layer of the two-dimensional circular curve according to the present invention is an essential operation for separating individual capacitors from very long wires, and is a new method that cannot be found in any previous patent or literature. , it is also claimed that it is a very simple operation compared to the conventional MLCC manufacturing method.

FIG. 4 according to the present invention provides an easy-to-understand summary of the changes 43, 44, and 45 in the cross-section of the wire for each process step performed in FIG. 3. The wire cross-section 43 of the portion released from the initial bush 41 is the result of the performance of FIG. 2 of the present invention and is composed of a center metal, an insulating layer, and an outer metal layer. When the wire provided in the patterning system 40 of the present invention is coated in a two-dimensional circular curved photoresist film application chamber, it is composed of a center metal, an insulating layer, an outer metal layer, and a photoresist layer, as shown in cross section 44. After completing the process in the multipurpose chamber, the cross section of the final wire is shown at 45 in FIG. 4. When the insulating layer, outer metal layer, and photosensitive film are removed, the outer metal layer 45-1 and the center metal layer 46 are exposed as shown at 45 in FIG. 4. Therefore, the circuit 46 can be formed by cutting each capacitor. The wire transferred from the multi-purpose chamber is formed into a wire that resembles the shape of countless individual capacitors connected, completing a very long wire-type capacitor with a length of several hundred meters to several kilometers, and is wound around a bush 42 to be surface mounted (SMT). Technology) device.

Referring to Figure 5 according to the present invention, it is a device designed to irradiate UV in three dimensions to a photosensitive film coated on a two-dimensional circular curved surface of the circumferential surface of a wire. The configuration of the two-dimensional circular curved surface exposure device 50 according to the present invention is that the UV oscillation laser diode array 51 has a circular curved surface for the purpose of uniformly irradiating UV simultaneously to the circumferential surface of a wire with a length of 2 m to 4 m. It is arranged in three dimensions and consists of a diode attachment substrate 52, a heat sink 54 that transfers heat generated from the diode, and a cooling fan 55. 56 in FIG. 5 is an empty pupil that will be filled with a 3D photomask (described in FIG. 6) and a sample wire (described in FIG. 6). The arrangement of the laser diode of the present invention is designed through simulation so that UV intensity is uniformly formed (53) over the entire area of 2 m in length.

Referring to Figure 6 of the present invention, (A) is the same as Figure 5. (B) is a two-dimensional circular curved photomask with a length of 2 m that is inserted into the pupil 56 of (A). More specifically, a metal pattern 61 capable of blocking UV is placed on the circumferential surface of a hollow quartz tube 60 having an inner diameter 20 to 100 ㎛ larger than the diameter of the wire (e.g. 200 ㎛). It is formed over a length of 2 m to have a constant width d ₁ (width of a single capacitor) in the longitudinal direction. This stone tube tube is fitted into the cavity (56). The metal pattern 61 surrounds the entire circumferential surface in a circular curve (circumferential direction), and is formed in the longitudinal direction as long as the length (d ₁ ) of a single capacitor. The metal pattern is separated by a certain width (d ₂ ) in the longitudinal direction, and the isolated width (d ₂ ) is the area that is cut when the external metal and insulating layer are removed through an etching process and manufactured into a single capacitor. When configuring a circuit, it becomes a wire bonding area, so the width of the area is determined by taking this into consideration, and can usually be 50 to 100 ㎛ wide. When the PocoMask quartz tube tube 60 is inserted into the pupil 56, the inner diameter of the quartz tube becomes the second pupil 62. In Figure 6(C), a wire is passed through the cavity 62 in (B). The wire is a wire 63 coated with a photoresist film in the photoresist chamber 34 of FIG. 3 . The thickness of the photosensitive film is generally about 1 ㎛, which is very small compared to the thickness of the wire center metal, so there is no problem in determining the second pupil 62. The inner diameter of the circular curved photomask stone tube is 20 to 100 ㎛ larger than the total thickness of the wire, so there is no problem in transferring it to the next process chamber after the photomasking process.

Originality and innovation of wire-type capacitors

The capacitor produced in the present invention can replace a multilayer ceramic capacitor (MLCC). MLCCs applied to home appliances are expected to require 60 to 1,000 for smartphones, 2,000 for LED TVs, and 1,200 for PCs, and in the future, 3,000 for autonomous vehicle electronics and 15,000 for electric vehicles are expected to be required.

According to the present invention, when the length of one single capacitor is 200 ㎛, 9,000 capacitors can be manufactured on 2 m of wire. Calculating the process time for forming the patterning system (assuming 10 minutes per process), capacitors produced per day The number reaches 2 million. This shows that while the conventional multilayer ceramic capacitor (MLCC) process is complex and time-consuming, the lithography method according to the present invention is a very simple process and is a highly productive manufacturing method. The world's largest MLCC producer produces approximately 6 billion MLCCs per year. If the capacitor manufacturing method according to the present invention is produced, it is a very efficient production method that can cover the demand for capacitors for one year by operating for 17 days with just one production equipment. The two-dimensional circular curved surface photomasking process method and device according to the present invention is very difficult to perform photolithography on the rounded two-dimensional circular curved surface of a very small wire bonding wire with a diameter of 25 to 500 ㎛, and is described in the patent or any literature. It is an innovative device that can replace the conventional MLCC with innovative technology that cannot be found anywhere else. With just one patterning device of the present invention, 1 million capacitors can be lithographed per day, so the production efficiency is much higher than that of MLCC and the manufacturing cost is also very low.

Cutting of wire type capacitors

Referring to FIG. 7 according to the present invention, the connector 70 of the capacitor manufactured in the form of a very long wire, for example, several hundred meters to several kilometers, completed in FIG. 3 is difficult to construct a circuit with capacitors, so it is sold individually. must be cut (72) into a single capacitor. The location of the cut must be the area where the center metal is exposed by the process of FIG. 3 of the present invention. After cutting, the circuit connection line can be bonded to the central metal part (L) between the external metal layer and the external metal layer. The cutting method 73 may be mechanical cutting or cutting by applying heat and pressure.

An example of application of wire-type capacitors

Figure 8 according to the present invention shows a method of connecting circuit electrodes to a single capacitor. There may be an electrode formed on the external electrode and the outer surface of the exposed central metal, as shown in (A), and an electrode formed on the cross section of the central metal cut from the external metal layer, as shown in (B). The circuit may be connected to a high-frequency voltage such as DC voltage (A, B) or AC voltage (C).

Referring to FIG. 9 according to the present invention, the wire-type capacitor 93 of the present invention having a low equivalent series inductance (ESL: Equivalent Series Inductance) is applied to a high-speed IC 91. The electrodes 93-1 and 93-2 of the wire-type capacitor of the present invention are bonded to the electrode 92 of the IC chip.

11, 11-1, 31-1, 32-2, 41, 42, 70 Bush
31-2, 32-1 bush motor
21 Thermal evaporator (thermal evaporation evaporator)
25-6 Rotator
20-3 center metal
27 External metal layer
20-4 insulating layer
34-3 photosensitive film
36-2 3D UV mask
37-1 Spray device for multi-purpose chemical spraying
37-6 Insulating layer and external metal layer etching area
39 Control device
51 3D Laser Diode Array
60 3D photomask
63 photoresist coated wire
74, 93 single capacitor
93-1, 93-2 capacitor electrode

Claims (14)

A central (core) metal in the form of a wire made of conductive metal with a length of hundreds of meters to tens of kilometers,
an insulating layer deposited on the circumferential surface of the central metal of the wire;
It includes an outer metal layer formed by depositing on the circumferential surface of the insulating layer using a thermal evaporator (thermal evaporation evaporator),
A cape in the form of a plurality of wires in which the insulating layer and the external metal layer are patterned to expose a certain length of the wire center metal by etching a two-dimensional circular curved surface in the circumferential direction of the wire center metal using a lithography method and a chemical spray method using a spray device. How sheeters are formed into a linear array.
According to paragraph 1,
The linear array is formed in the longitudinal direction of the central metal, for example, in the form of a capacitor with an outer metal layer of 200 ㎛ and an exposed central metal length of 100 ㎛, a plurality of capacitors are arrayed in the coaxial direction of the wire. How to become.
According to paragraph 1,
A method in which a metal layer is uniformly formed on the two-dimensional circular curved surface (circumferential surface) of the wire using the thermal evaporation method (thermal evaporation deposition method),
In a vacuum chamber,
A first spool in which a wire with an insulating layer formed on the center metal of the wire is wound,
arranging at regular intervals second bushes prepared for winding the wire on which the outer metal layer is formed;
The speed of unwinding the wire from the first bush and the speed of winding the wire from the second bush are controlled to be the same,
A process of generating metal vapor by placing a boat containing a plurality of metal particles heated by a resistance heating method between the bushes;
Controlling the movement or stopping of the wire between the two bushes in the metal vapor;
A process method in which metal vapor is uniformly deposited on the circumferential surface of the wire by placing two rotating bodies at both ends of the boat so that the wire rotates clockwise and counterclockwise along the coaxial line between the two bushes.
According to paragraph 1,
A method of uniformly patterning a photosensitive film on a two-dimensional circular curved surface (circumferential surface) of a wire using the lithography method,
In standby state,
a first spool wound with a wire having an outer metal layer formed on the wire;
arranging at regular intervals a second bush prepared to wind a wire patterned with an outer metal layer and an insulating layer;
The speed of unwinding the wire from the first bush and the speed of winding the wire from the second bush are controlled to be the same,
In the photosensitive film application chamber disposed between the bushes, with the transfer of the wire stopped,
A process of spraying a photosensitive film on a wire of a certain length using a spray device to coat a two-dimensional circular curved surface with a photosensitive film of a certain thickness;
Transferring the wire of a certain length onto which the photosensitive film is applied to the next step, an oven set at a temperature of 90 degrees, and applying heat at 90 degrees for 10 minutes to soft bake the photosensitive film;
Next step,
The soft-baked wire of a certain length is transferred through a photomask tube of a cylindrical quartz tube placed in a UV masking chamber;
With the wire feeding stopped,
A two-dimensional circular curved photomask pattern is formed on the outer diameter of the cylindrical quartz tube,
UV is irradiated in a vertical direction of the outer circular curve of the quartz tube,
A method that combines the processes in which the UV passes through a quartz tube and is irradiated to a wire inserted inside the quartz tube.
According to paragraph 1,
A method of etching (patterning) the outer metal layer and the insulating layer uniformly on the two-dimensional circular curved surface (circumferential surface) of the wire using the chemical spray method using the spray device,
As a subsequent process of claim 4,
The wire is transferred from the inside of the cylindrical quartz tube photomask to the multipurpose chamber and the wire is maintained in a stationary state;
A process in which the UV-exposed photosensitive film is removed by spraying a developer from a spray device in a multipurpose chamber;
A process in which pure water is sprayed to remove residual developer from a spray device in the same chamber (multipurpose chamber),
A process of hard baking the photoresist film for 10 minutes at a temperature of 120 degrees in the same chamber,
A process of etching the external metal film by spraying a chemical solution from a spray device in the same chamber,
A process of etching the insulating layer by spraying a chemical solution from a spray device in the same chamber,
A process in which pure water is sprayed to remove residual etching solution from a spray device in the same chamber,
In the next step, the wire that has completed the etching process is transferred to a thermal stabilization chamber, goes through a stabilization step, and is then wound into a bush, a multi-step etching process.
A two-dimensional circular surface lithography process of a wire using a cylindrical photomask,
A two-dimensional circular curved etching process for wire using a spray method,
A wire-shaped capacitor is wound on a very long bush in a linear array,
A process of cutting a linear array of capacitors into individual capacitors using mechanical cutting or heat and pressure (compression).
An example of application by bonding a wire-type capacitor to the electrode of a high-performance IC chip that requires low equivalent series inductance characteristics. As an example, applied to the area of minimizing insertion loss and return loss in the 100 GHz band.
A central (core) metal in the form of a wire made of conductive metal with a length of hundreds of meters to tens of kilometers,
Preparing an insulating layer deposited on the circumferential surface of the central metal of the wire,
Depositing an external metal layer on the two-dimensional curved surface (circumferential surface) of the insulating layer using a thermal evaporator (thermal evaporation evaporator),
A device capable of spraying a chemical solution on a two-dimensional curved surface of the insulating layer and the outer metal layer in the circumferential direction of the wire center metal using a lithography device and a spray device,
A device for manufacturing a capacitor array in the form of a plurality of wires patterned so that the center metal of the wire of a certain length is exposed using the above device. According to clause 8,
A metal layer is uniformly formed on the two-dimensional circular curved surface (circumferential surface) of the wire using the thermal evaporation method; A device for depositing Al, Al-Sn alloy, Ag-Sn alloy, etc.
preparing the vacuum chamber;
A first spool in which a wire with an insulating layer formed on the center metal of the wire is wound,
A second bush prepared for winding the wire on which the outer metal layer is formed is placed at both ends of the vacuum chamber,
A control device that ensures that the speed of unwinding the wire from the first bush is the same as the speed of winding the wire from the second bush, or controls transfer and stopping,
A boat containing a plurality of metal grains heated by a resistance heat method between the bushes, a resistive heat application device for generating metal vapor, and a clockwise and counterclockwise direction along the coaxial line of the wire while generating metal vapor between the two bushes. A two-dimensional curved thermal evaporation device that deposits metal vapor uniformly on the circumferential surface of the wire by placing two rotating bodies on both ends of the boat to rotate in each direction.
According to clause 9,
A wire is placed in an area through which metal vapor passes,
Two rotating bodies (a first rotating body and a second rotating body) are disposed at both ends of a plurality of boat blocks (both ends of the deposition section),
A signal detection device that stops the transfer of the YE,
Each rotating body is in the form of a pin containing a spring,
Each rotating body simultaneously secures both ends of the wire with clamps,
A rotating body that rotates alternately clockwise and counterclockwise along the coaxial line of the wire in the area through which metal vapor passes,
Thickness monitoring device that measures the thickness of the external metal layer,
When the appropriate thickness is reached, the spring of the rotating clamp is relaxed and the wire is released from its fixed state.
The two bushes are operated to wind the outer metal layer to the deposited length, and at the same time, the wire is transferred to the deposition section for the length of the non-deposited wire, and each rotor operates again to fix the wire at the same time and rotate clockwise and counterclockwise. A rotating body that rotates.



According to clause 9,
The interior of the thermal evaporation device includes two partition panels (first panel and second panel) that are divided into three areas,
The three distinct areas are a first area divided by a first panel containing a first bush and a motor and a first rotating body around which a wire on which an external metal layer has not yet been deposited is wound, and a wire on which an external metal layer has been deposited. A third area is divided by a second panel containing a second bush to be wound, a motor, and a second rotating body, and includes a plurality of boats and a resistance heating device disposed between the first area and the third area. A second area as a deposition section,
The two panels each have a pinhole through which one wire passes,
The wire unwound from the motor of the bush in the first area passes through the first rotating body and the pinhole of the first panel, passes through the second area as a metal vapor deposition section, and passes through the pinhole of the second panel. and all systems and controls that then pass through the second rotor and wind up on the first bush.
According to clause 8,
The device for lithography and patterning the two-dimensional circular curved surface of the outer metal layer and insulating layer of the wire is largely divided into three areas:
The three distinct areas include a first area including a first bush and a motor on which a wire that has not yet been coated with a photosensitive film is wound, and a second bush and a motor on which the wire is to be wound after the external metal layer and insulating layer are patterned. a third region comprising a lithography chamber disposed between the first region and the third region and a second region comprising a multi-purpose chamber for etching;
The second area is divided into five subareas,
A two-dimensional circular curved photoresist film coating device in a first small region where a brush motor in the first region operates to transfer a wire of a certain length;
A control device that transfers a certain length of wire coated with the photosensitive film to a second small area (soft baking chamber) by a certain length and a temperature control device that maintains the temperature of the chamber at 90 degrees;
A two-dimensional curved UV irradiation system disposed in a third small region (two-dimensional curved lithography device) where the soft-baked wire of a certain length has been transferred and a two-dimensional curved mask formed on a quartz tube,
A third small area (multipurpose chamber) into which the UV-masked wire of a certain length has been transferred,
A spray device disposed inside the multipurpose chamber,
In the spray device, a control device for spraying a two-dimensional curved photoresist film developer,
In the spray device, a device for controlling air spray at a temperature of 120 degrees for hard baking the photosensitive film after development,
In the spray device, a device for controlling spraying of a chemical solution for etching the external metal layer,
In the spray device, a device for controlling spraying of a chemical solution for etching the insulating layer,
In the spray device, a spray control device for spraying pure water for cleaning the etching chemical solution, and an oven and a temperature control device for a temperature of 300 to 400 degrees as a fourth subregion for thermally stabilizing the wire in the form of a capacitor array after the etching process is completed. ,
A two-dimensional circular curved surface photolithography patterning system and a two-dimensional circular curved surface etching system including a bush and a motor for winding a wire on which the patterning process has been completed as a second area in the stabilization oven.
According to clause 12,
The two-dimensional circular surface lithography system is,
A laser diode array in which UV-emitting laser diodes are arranged in an annular shape on the coaxial axis and have a certain length in the coaxial direction,
Quartz tube for two-dimensional circular curved photolithography,
The laser diode array is simulated and designed and arranged to provide uniform UV intensity across the entire two-dimensional curved surface,
The laser diode array is designed and arranged so that the direction of UV light irradiated across the entire two-dimensional curved surface is incident perpendicular to the outer surface of the quartz tube,
Equipped with a thermocouple and a cooling fan that discharge heat generated from the laser diode to the outside,
A structure in which the diameter of the pupil inside the ring where the laser diode is disposed is larger than the outer diameter of the quartz tube for two-dimensional circular curved photolithography,
A two-dimensional circular curved photolithography system consisting of structures in which the inner diameter of the quartz tube for two-dimensional circular curved photolithography is designed and manufactured to be larger than the outer diameter of the wire on which the photosensitive film is applied.
According to clause 13,
The structure of the quartz tube for two-dimensional photolithography is:
Metal pattern array structure for UV blocking on the outer two-dimensional circular surface of the quartz tube,
The size of the UV blocking metal pattern is an array patterned with a length corresponding to the length of a single capacitor,
The gap between the UV blocking metal pattern and the neighboring pattern has a gap that allows at least a space to cut a single capacitor from the wire in which the capacitors are formed, and a gap that is sufficient to connect a circuit to the center metal portion of the cut single capacitor. The spacing of the pattern that forms the structure.