KR20240055813A - 칼코겐화물들 (chalcogenides) 을 프로세싱하기 위한 기법들 및 장치들 - Google Patents

칼코겐화물들 (chalcogenides) 을 프로세싱하기 위한 기법들 및 장치들 Download PDF

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Publication number
KR20240055813A
KR20240055813A KR1020247011126A KR20247011126A KR20240055813A KR 20240055813 A KR20240055813 A KR 20240055813A KR 1020247011126 A KR1020247011126 A KR 1020247011126A KR 20247011126 A KR20247011126 A KR 20247011126A KR 20240055813 A KR20240055813 A KR 20240055813A
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South Korea
Prior art keywords
wafer
temperature
substrate
processing chamber
layer
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Pending
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KR1020247011126A
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English (en)
Korean (ko)
Inventor
존 호앙
아론 린 로우트잔
안드레아스 피셔
메이후아 센
토르스텐 베른트 릴
세샤사예 바라다라얀
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램 리써치 코포레이션
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Publication of KR20240055813A publication Critical patent/KR20240055813A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
KR1020247011126A 2021-09-07 2022-09-04 칼코겐화물들 (chalcogenides) 을 프로세싱하기 위한 기법들 및 장치들 Pending KR20240055813A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163260946P 2021-09-07 2021-09-07
US63/260,946 2021-09-07
PCT/US2022/042570 WO2023038870A1 (en) 2021-09-07 2022-09-04 Techniques and apparatuses for processing chalcogenides

Publications (1)

Publication Number Publication Date
KR20240055813A true KR20240055813A (ko) 2024-04-29

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Family Applications (1)

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KR1020247011126A Pending KR20240055813A (ko) 2021-09-07 2022-09-04 칼코겐화물들 (chalcogenides) 을 프로세싱하기 위한 기법들 및 장치들

Country Status (5)

Country Link
US (1) US20240381790A1 (cg-RX-API-DMAC7.html)
JP (1) JP2024534873A (cg-RX-API-DMAC7.html)
KR (1) KR20240055813A (cg-RX-API-DMAC7.html)
CN (1) CN117941493A (cg-RX-API-DMAC7.html)
WO (1) WO2023038870A1 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12615980B2 (en) 2021-03-18 2026-04-28 Lam Research Corporation Etching of indium gallium zinc oxide
US20250285886A1 (en) * 2024-03-11 2025-09-11 Egtm Co., Ltd. Method of treating thin films and method of manufacturing memory device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8394667B2 (en) * 2010-07-14 2013-03-12 Micron Technology, Inc. Methods of forming memory cells, and methods of patterning chalcogenide-containing stacks
US9349939B2 (en) * 2014-05-23 2016-05-24 Qualcomm Incorporated Etch-resistant protective coating for a magnetic tunnel junction device
US10454029B2 (en) * 2016-11-11 2019-10-22 Lam Research Corporation Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
WO2018231695A1 (en) * 2017-06-13 2018-12-20 Tokyo Electron Limited Process for patterning a magnetic tunnel junction
US10930849B2 (en) * 2019-06-28 2021-02-23 Micron Technology, Inc. Techniques for forming memory structures

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Publication number Publication date
US20240381790A1 (en) 2024-11-14
JP2024534873A (ja) 2024-09-26
WO2023038870A1 (en) 2023-03-16
CN117941493A (zh) 2024-04-26

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