KR20240055441A - Substrate treating apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus, comprising: a first process chamber in which a process for processing a first substrate is performed by plasma generated by supplying a process gas to an upper side of a first substrate disposed in a first internal space; a second process chamber disposed in parallel with the first process chamber, wherein the second substrate is processed by plasma generated by supplying a process gas to an upper side of the second substrate disposed in a second internal space; a first gas supply pipe supplying process gas from the gas source to the first process chamber; a second gas supply pipe supplying process gas from the gas source to the second process chamber; a connection pipe communicating the first gas supply pipe and the second gas supply pipe; Even though the process gas is supplied to the first gas supply pipe and the second gas supply pipe at different supply amounts per unit time due to deviation in flow resistance due to deviation in the size and assembly of the gas supply pipe extending from the gas source, the first gas supply pipe is configured to include a gas supply pipe. Substrate processing that can uniformly supply the flow rate per unit time of the process gas supplied to the first process chamber and the second process chamber by minimizing the deviation in the flow rate per unit time of the process gas supplied to the process chamber and the second process chamber. Provides a device.

Description

Substrate processing apparatus having multiple process chambers {SUBSTRATE TREATING APPARATUS}

The present invention relates to a substrate processing apparatus, and more specifically, in the process of supplying process gas from one gas source to a plurality of process chambers arranged side by side, supply of process gas supplied to a plurality of process chambers per unit time. It relates to a substrate processing device that maintains flow rate and temperature within a certain range.

Generally, a plasma substrate processing device uses plasma to perform various processes such as deposition, ashing, and cleaning on the surface of a substrate. For example, Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment uses the chemical reaction of gas in a vacuum during the display manufacturing process or semiconductor manufacturing process to deposit insulating films, protective films, oxide films, metal films, etc. on the substrate. Used for deposition.

1 is a longitudinal cross-sectional view showing an example of a substrate processing apparatus. As shown in FIG. 1, the substrate processing apparatus 9 includes a plurality of process chambers 11 and 21, which are provided with internal spaces S1 and S2 sealed from the outside and maintained in a vacuum state during the deposition process, and a process chamber 9. It includes substrate supports 12 and 22 that are installed to be able to be raised and lowered inside the chambers 11 and 21 on which the substrate W is seated, and a source gas that serves as a deposition material inside the process chambers 11 and 21. A discharge member (14) forming a shower head (13, 23) that supplies process gas, and an discharge channel (44) that discharges the gas supplied to the process chambers (11, 21) to the outside of the internal spaces (S1, S2). , 24) It is composed including ㄹ.

In the configuration illustrated in the drawing, since two process chambers 11 and 21 are formed, a chamber body c10 is disposed at the boundary of each process chamber 11 and 21. If necessary, a fixing block 88 for fixing the chamber lid may be installed on the upper side of the chamber body c10.

In order to allow the substrate supports 12 and 22 to move up and down while maintaining the internal space of the process chambers 11 and 12 in a vacuum state, a bellows is provided to block external air. Accordingly, with the substrate W mounted on the substrate supports 12 and 22, the inside of the process chamber 11 and 21 is adjusted to a vacuum state lower than atmospheric pressure, and the process gas is discharged through the shower heads 13 and 23. is supplied to the inside of the process chambers 11 and 21, and RF power is applied from an RF power supply (not shown) to the upper electrode to generate plasma inside the process chambers 11 and 21, thereby forming a substrate (W ) treatment process is performed.

In general, the same substrate processing process is performed in the process chambers 11 and 21, and for this, it is very important to create the same processing conditions in each of the internal spaces S1 and S2. For example, the process gas supplied from one gas source (G) has a supply flow rate per unit time adjusted to be equal to the internal spaces (S1, S2) of the two process chambers (11, 21), and the process gas is supplied simultaneously. The temperature must be adjusted equally.

At this time, since facilities such as an RF power supply and an impedance matcher are installed on the upper side of the process chambers 11 and 21, the gas supply source G is generally disposed on the lower side of the process chambers 11 and 21. Then, process gas is supplied (d1, d2) to each process chamber (11, 21) from one gas source (G).

However, even if the process gas is transferred from the gas source G through the respective gas supply pipes 91 and 92 toward the process chambers 11 and 21 at the same pressure, the gas connected to each process chamber 11 and 21 Due to differences in dimensional tolerances and assembly tolerances of the gas supply pipes 91 and 92, deviations in the amount of process gas supplied per unit time actually delivered to the process chambers 11 and 21 occur. This causes the substrate processing process to be performed differently in each process chamber 11 and 21, causing a problem in which the reliability of the substrate processing process is reduced.

The above-described configuration and operation are not known prior to the filing date of the present application, and are merely a description of the technology for comparison with the present invention.

In order to solve the above-described problem, the present invention provides a substrate processing apparatus in which a process gas is supplied from one gas source to a plurality of process chambers to perform a substrate processing process, and the process gas supplied to each process chamber is provided. The purpose is to minimize the variation in supply per unit time.

In addition, in the present invention, even if the temperature of the process gas supplied from the gas source is not separately controlled, the high temperature of the process chamber is used to exchange heat with the chamber body of the process chamber to adjust the temperature of the process chamber flowing into the process chamber to an appropriate temperature. The purpose is to

In order to achieve the above-described object, the present invention provides a first process chamber in which the treatment process of the first substrate is performed by plasma generated by supplying a process gas to the upper side of the first substrate disposed in the first internal space. and; a second process chamber disposed in parallel with the first process chamber, wherein the second substrate is processed by plasma generated by supplying a process gas to an upper side of the second substrate disposed in a second internal space; a first gas supply pipe supplying process gas from the gas source to the first process chamber; a second gas supply pipe supplying process gas from the gas source to the second process chamber; a connection pipe communicating the first gas supply pipe and the second gas supply pipe; Provided is a substrate processing device comprising:

The 'gas' or 'process gas' described in this specification and patent claims is supplied to react with the source gas that forms the main material of the film formed on the upper surface of the substrate and the source gas that forms the main material of the film formed on the upper surface of the substrate. This refers to all of the reaction gas supplied to the process chamber, the carrier gas supplied together to supply a specific gas to the process chamber, and the modulation gas supplied during the modulation step in the process chamber, and refers to all of the various gases supplied to the process chamber. It is defined as referring to

The name ‘first ~’ described in the present specification and claims refers to a component of the first process chamber unit 100, and the name ‘second ~’ refers to a component of the second process chamber unit 200. refers to a name that does not include 'first ~' or 'second ~', and the reference numerals of the components of the first process chamber unit 100 and the reference symbols of the components of the second process chamber unit 200 The names written together with are considered to collectively refer to the components of the first process chamber unit 100 and the second process chamber unit 200.

As described above, in the present invention, due to the deviation in flow resistance due to the size and assembly deviation of the first gas supply pipe and the second gas supply pipe, the process gas is supplied to the first gas supply pipe and the second gas supply pipe at different amounts per unit time. Even though it is supplied to the process chamber, the process gas is supplied to each process chamber through a connection pipe that connects the first vertical supply pipe and the second vertical supply pipe extending from one gas source disposed in the lower part of the process chamber with each other in the upper area of the chamber body. By minimizing the deviation of the supply flow rate per unit time, it is possible to obtain the advantageous effect of more uniformly controlling the supply flow rate per unit time of the process gas supplied to the first process chamber and the second process chamber.

Through this, the present invention can obtain the advantageous effect of ensuring uniformity of the processing process by eliminating deviations in the processing process performed on the first substrate and the second substrate in different process chambers, respectively.

In addition, the present invention provides a chamber body in which a first gas supply pipe and a second gas supply pipe that transport process gas from a gas source located on the lower side of the process chamber to the upper side of the shower head located on the upper side of the process chamber each form a process chamber. As it is arranged through the process chamber, the process gas supplied at low temperature can be raised to an appropriate temperature for supply to the process chamber as it passes through the chamber body of the process chamber. Therefore, even without a separate heating device, the process gas can be supplied to the process within a set temperature range. The advantage of supplying to the chamber can be obtained.

1 is a longitudinal cross-sectional view showing the configuration of a general substrate processing device;
Figure 2 is a graph analyzing the deviation of the supply flow rate per unit time supplied to the first process chamber and the second process chamber when there is a defect in the first gas supply pipe of Figure 1
3 is a longitudinal cross-sectional view showing the configuration of a substrate processing apparatus according to an embodiment of the present invention;
Figure 4 is an enlarged view of part 'A' of Figure 3,
Figure 5 is a schematic diagram showing a configuration for heating process gas in the process of supplying process gas from one gas source to different process chambers;
Figure 6 is a graph showing analysis data in which process gas is supplied in a heated state according to the configuration of Figure 5;
Figure 7 is a graph analyzing the deviation of the supply flow rate per unit time supplied to the first process chamber and the second process chamber when the same defect as in Figure 2 is in the first gas supply pipe.

Hereinafter, a substrate processing apparatus 1 according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. However, in describing the present invention, detailed descriptions of well-known functions or configurations will be omitted to make the gist of the present invention clear.

As shown in Figures 3 and 4, the substrate processing apparatus 1 according to an embodiment of the present invention includes a pair of first process chambers 110 provided with internal spaces (S1 and S2) isolated from the outside. and a second process chamber 210, a shower head 120, 220 that supplies process gas downward from the upper side of the process chamber 110, 210, and a shower head disposed below the shower head 120, 220 and on the upper surface. Substrate supports (130, 230) supporting the substrate (W), discharge members (140, 240) forming gas discharge passages (px) from the internal spaces (S1, S2), and one gas source (G) The first gas supply pipe 190 and the second gas supply the process gas to the first shower head 120 of the first process chamber 110 and the second shower head 220 of the second process chamber 210, respectively. It is configured to include a supply pipe, and is configured to perform the same processing process for the substrate in each of the first process chamber unit 100 and the second process chamber unit 200.

The name 'second ~' described in the present specification and patent claims refers to the configurations 210 and 220 of the second process chamber unit 200, which is other than the first process chamber unit 100 of the embodiment illustrated in the drawing. , 230, P2, B2, E2,..). However, for convenience, the reference numerals of the corresponding components of the first process chamber unit 100 and the second process chamber unit 200 are indicated for each component (e.g., 'substrate support') (e.g. For example, at (120, 220), a component of the first process chamber unit 100 (e.g., substrate support 120) and a component of the second process chamber unit 200 (e.g., It is considered to refer to the two substrate supports (220) together.

The process chambers 110 and 210 form isolated interior spaces S1 and S2 that are blocked from external air, and are maintained in a vacuum state lower than atmospheric pressure during the processing of the substrate W. To this end, the process chambers 110 and 210 may be equipped with a pressure controller (not shown) that controls the internal pressure and a temperature controller (not shown) that controls the internal temperature.

The internal spaces S1 and S2 are formed corresponding to the shape of the substrate on which the processing process is performed. For example, when a processing process is performed on a circular disk-shaped substrate W, the internal spaces S1 and S2 are formed in the shape of a circular cylinder, and the side surfaces 110i and 210i of the process chambers 110 and 210 are It forms a circular cross-section, and the side circumferential direction of the process chambers 110 and 210 forms a circumferential direction.

Although not shown in the drawings, it further includes an RF power supply unit that supplies RF power to the internal spaces S1 and S2 of the process chambers 110 and 210. Here, the frequency of the power source is preferably 13.56 MHz to 27.12 MHz, and the pulse frequency is preferably 10 to 100 kHz, but is not limited thereto. The RF power application unit supplies RF power to the upper electrode and generates plasma between the lower electrodes formed on the substrate supports 130 and 230.

The shower heads 120 and 220 uniformly supply the process gas supplied from the gas sources 150 and 250 to the substrate W. To this end, if the shape of the substrate W of the shower heads 120 and 220 is disk-shaped, the supply ports for supplying gas are also arranged in a disk-shaped manner. Then, the process gas supplied 91 from the gas supply source 150, 250 is uniformly distributed and supplied 92 to the substrate W through the injection holes 132, 232 of the shower head 120, 220. ).

In the deposition step of forming an insulating film on the surface of the substrate W, a source gas and a reaction gas are supplied through the shower heads 120 and 220, and a carrier gas may be supplied as needed. Then, RF power is applied to the plasma electrode formed in the shower heads 120 and 220 by an RF power application unit described later, and process gas is supplied by the shower heads 120 and 220, thereby forming the shower heads 120 and 220. Plasma is generated between the and the substrate (W).

The shower heads 120 and 220 are formed of a conductive material and can act as an upper electrode to which RF power is applied from the RF power applicator. Separately from the shower heads 120 and 220, the upper electrode is connected to the shower heads 120 and 220. It may also be installed in .

The substrate supports 130 and 230 are installed to be movable in the up and down direction, so that when the substrate W is introduced into the process chamber 110 and 210, the substrate W is mounted on the bottom surface of the shower head 120 and 220. The distance to is maintained at a predetermined value so that the process gas supplied through the shower heads 120 and 220 uniformly contacts the entire surface of the substrate W.

The substrate W mounted on the substrate supports 130 and 230 may be formed with at least a portion of a metal layer made of a conductive material exposed to the outside in order to form an insulating film. Here, the metal layer may be formed of various materials such as tungsten, or may be formed of copper (Cu), which has excellent electrical conductivity. The insulating film deposited on the metal layer of the substrate W may be a SiN film, a SiCN film, an oxide layer film, or the like.

The substrate supports 130 and 230 are also formed to correspond to the shape of the substrate on which the processing process is performed. For example, when a processing process is performed on a circular disk-shaped substrate (W), the substrate supports (130, 230) are formed to support the substrate (W) in a disk shape, and are positioned on the sides of the process chambers (110, 210). The distance between (110i, 210i) and the substrate supports (130, 230) is set to a constant dimension along the circumferential direction.

The outlet members 140 and 240 form an outlet channel px extending from the outlet 10x of the process chambers 110 and 210 . As illustrated in the drawing, the outlet 10x may be formed on the bottom of the process chambers 110 and 210 or on the side of the process chambers 110 and 210.

The gas supply pipes 190 and 290 transport the process gas from one gas source (G) to the internal spaces (S1 and S2) of each process chamber (110 and 210) to the substrate through the shower heads (120 and 220). Process gas can be supplied to the upper side of the substrate W mounted on the supports 130 and 230.

Here, an RF power supply unit and an impedance matcher are installed on the upper side of the shower heads 120 and 220 to apply RF power to the upper electrode, and in some cases, a remote plasma source (RPS) that supplies cleaning radicals is installed. , the gas source G is preferably disposed below one or more of the process chambers 110 and 210.

The gas supply pipes 190 and 290 include a first gas supply pipe 190 that supplies process gas to the first process chamber 110, and a second gas supply pipe 290 that supplies process gas to the second process chamber 210. It consists of Here, the first gas supply pipe 190 extends vertically upward in a straight line to form chamber bodies 110 and 210 between the first process chamber 110 and the second process chamber 210 (c10). ) and a first vertical supply pipe 191 passing through the first vertical supply pipe 191, extending horizontally toward the upper side of the first process chamber 110 in a bent path from the T-shaped connector 195 at the top of the first vertical supply pipe 191. Includes a horizontal supply pipe (192). And, the second gas supply pipe 290 includes a second vertical supply pipe 291 that extends vertically upward in a straight line and penetrates the chamber body (c10), and a T-shaped connector at the top of the second vertical supply pipe 291 ( It includes a second horizontal supply pipe 292 extending horizontally toward the upper side of the second process chamber 210 in a bent path from 295).

At this time, since the first gas supply pipe 190 and the second gas supply pipe 290 receive process gas from the same gas source (G), the same process gas is transferred. As shown in Figure 3, the process gas begins to be transferred (y) from the gas source (G) through one common pipe 90, and the common pipe 90 includes the first gas supply pipe 190 and the second gas supply pipe 190. It branches off into the gas supply pipe 290 and penetrates the chamber body (c10). However, the present invention is not limited to the configuration provided with the common pipe 90 illustrated in the drawing, and includes a configuration extending from the gas source G to separate vertical supply pipes, as shown in FIG. 1.

Meanwhile, the term 'vertical supply pipe (191, 291)' described in the present specification and patent claims includes, but is not limited to, a configuration connected by a single pipe from the gas source (G) to the upper side of the fixed block (88). It is defined as including a configuration in which at least one part penetrating the chamber body c10 or the fixed block 88 is formed as a through hole and connected to another part of the pipe. Through this, heat transfer to the process gas is smoothly achieved while penetrating the chamber body c10, so that the process gas heated to an appropriate temperature range is supplied to the process chamber ( It becomes possible to supply to the internal spaces (S1, S2) of 110, 210).

That is, according to a preferred embodiment of the present invention, the portion where the first vertical supply pipe 191 and the second vertical supply pipe 291 penetrate the chamber body (c10) is formed to penetrate the chamber body (c10) in the vertical direction. It is formed as a through hole (xx), and the upper and lower sides of the vertical through hole (xx) of the chamber body (c10) are formed with pipes connected to the vertical through hole (xx). Through this, the process gas passing through the high temperature chamber body c10 receives heat from the chamber body c10 and is heated to a sufficiently high temperature even without a separate heating means.

In other words, the first gas supply pipe 190 and the second gas supply pipe 290 have a higher temperature than the low-temperature process gas supplied (y) from the gas source (G) in the area (A2) passing through the chamber body (c10). Heat Qb is transferred from the temperature chamber body c10, and is heated to a higher temperature than the low temperature in the area A1 before reaching the bottom surface 10s of the chamber body c10.

This is because the chamber body (c10) is maintained at a high temperature (e.g., 130°C to 180°C) due to the plasma generated during the substrate processing process in the process chambers 110 and 210, through the gas supply pipes 190 and 290. As the transported process gas passes through the portion where each gas supply pipe 190, 290 penetrates the chamber body c10, it receives heat Qb from the chamber body c10, thereby heating the chamber body without a separate heating means. The process gas supplied (y) at a low temperature (e.g., 20°C to 35°C) from the lower area (A1) of (c10) is supplied to each process chamber (110, 210) in the upper area (A3) of the chamber body (c10). ) It is possible to maintain the final temperature supplied to the shower heads 120 and 130 (y12, y22) in a temperature range suitable for the substrate processing process (for example, about 80°C to 120°C).

If the gas supply pipes 190 and 290 pass through the chamber body c10 without branching from the common pipe 90, the process gas supplied to the first process chamber 110 and the second process chamber 210 Since the sum of all is transported through one pipe, sufficient heat is not supplied while passing through the chamber body (c10), so there is the inconvenience of having to provide a separate heating means on the lower side of the process chambers (110, 210). It is undesirable because it involves Meanwhile, an RF power supply unit, an impedance matching unit, etc. must be installed on the upper side of the shower heads (120, 220), and the gas supply pipe must be branched, so a heating means is installed in the area (A3) on the upper side of the shower heads (120, 220). Since it is very difficult to provide, it is not efficient to extend from the gas source (G) to the upper side of the chamber body (c10) with one common pipe. Therefore, it is preferable that a number of vertical supply pipes 191 and 291 corresponding to the number of process chambers 110 and 210 from one gas source G are configured to penetrate the high temperature chamber body c10.

This fact can be confirmed through the temperature analysis graph shown in Figure 6. That is, the temperature of the process gas supplied from the gas source G is 26.34°C, but when it passes through the chamber body c10 through the two vertical supply pipes 191 and 291, it is heated to about 120°C, and the shower head ( It can be seen that the temperature of the process gas is approximately 100°C to 110°C on the upper side of the process chambers 110 and 210 connected to the 120 and 220).

Meanwhile, the first gas supply pipe 190 and the second gas supply pipe 290 are formed in a separate form and extend vertically to penetrate the chamber body c10, but the first gas supply pipe 290 is formed on the upper side penetrating the chamber body c10. A connection pipe 300 is provided to communicate the gas supply pipe 190 and the second gas supply pipe 290.

This means that even if the vertical supply pipes 191 and 291 were intended to be manufactured with the same dimensions, there is a difference in shape within the tolerance range, and in particular, the vertical supply pipes 191 and 291 are connected to the chamber body c10 from the gas source G. There is a difference in the assembled state of the connected portion and the portion penetrating the fixing block 88. As a result, there is a difference in the flow resistance that impedes the flow of process gas in the first vertical supply pipe 191 and the second vertical supply pipe 291, and accordingly, the first vertical supply pipe 191 and the second vertical supply pipe 291 The supply amount per unit time of the process gas that passes through 291 and reaches the upper side of the fixed block 88 (y11, y21) may be different.

Deviation in the supply flow rate of the process gas per unit time at the upper ends of the first vertical supply pipe 191 and the second vertical supply pipe 291 causes pressure variation, and as a result, the first vertical supply pipe 191 and the second vertical supply pipe 291 The flow (yy) of the process gas is changed from the side with a high supply flow rate per unit time to the side with a low supply flow rate per unit time in the connection pipe 300 to compensate for the deviation in pressure through the connection pipe 300 connecting the upper end of the supply pipe 291. occurs.

Through this, even if there is a deviation in the supply flow rate of the process gas per unit time when it reaches the top of the first vertical supply pipe 191 and the second vertical supply pipe 291 from one gas source (G), the connection pipe 300 ), the difference in the supply flow rate per unit time of the process gas at the top of each vertical supply pipe 191, 291 is greatly reduced, so the first process chamber 110 and the second substrate in which the treatment process of the first substrate is performed The supply flow rate per unit time of the process gases (y12, y22) supplied to the second process chamber 210 where the treatment process is performed becomes the same to the extent that it can be considered to be uniform. Accordingly, it is possible to satisfy the supply amount of process gas for performing the same substrate processing process in two different process chambers 110 and 210.

This fact can be confirmed through the simulation analysis result graph regarding the supply flow rate of the process gas per unit time shown in Figures 2 and 7. That is, when the top of the two vertical supply pipes 191 and 192 is reached from one gas source (G), the process gas is supplied directly to the process chambers 110 and 210 without the connection pipe 300, and one of them is supplied directly to the process chambers 110 and 210. When a defect occurred in the first vertical supply pipe 191, there was a difference of 10.126% in the supply flow rate per unit time supplied to the first process chamber 110 and the second process chamber 210 ( Figure 2).

However, that is, the upper ends of the two vertical supply pipes 191 and 192 from one gas source G are connected to the connecting pipe 300, and from the upper ends of these 191 and 192 to the process chambers 110 and 210. Process gas is supplied through horizontal supply pipes 192 and 292, but when the same defect occurs in one of the first vertical supply pipes 191, flow occurs in the connection pipe 300, and the first vertical supply pipe 191 It was confirmed that the supply flow rate per unit time supplied to the process chamber 110 and the second process chamber 210 was greatly reduced with a difference of 1.12% (FIG. 7). That is, by connecting the upper ends of the vertical supply pipes 191 and 192 with the connection pipe 300, the deviation of the supply flow rate per unit time of the process gas supplied to the process chambers 110 and 210 is reduced from 10.126% to 1.12%. It was confirmed that it could be greatly reduced to about 1/10.

The substrate processing apparatus 1 according to an embodiment of the present invention configured as described above is configured to supply process gas from one gas source G to the first vertical supply pipe 191 and the second vertical supply pipe 291 in different units. Even though it is supplied at an hourly supply, it is supplied to the first process chamber 210 and the second process chamber 210 through the connection pipe 300 that communicates the first vertical supply pipe 191 and the second vertical supply pipe 192 with each other. Processing of substrates in different process chambers by minimizing the deviation of the supply flow rate per unit time of the process gas and uniformly adjusting the supply flow rate per unit time of the process gas supplied to the first process chamber and the second process chamber within the allowable range. The advantageous effect of ensuring that the process can be performed identically can be achieved.

As described above, the present invention has been described with reference to preferred embodiments, but those skilled in the art will understand the configuration of the embodiments according to the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. You will understand that the combination of can be modified and changed in various ways.

1: Substrate processing device 100: First process chamber unit
110: first process chamber 120: first shower head
130: First substrate support 190: First gas supply pipe
191: first vertical supply pipe 192: first horizontal supply pipe
200: second process chamber unit 210: second process chamber
220: second shower head 230: substrate support
290: Second gas supply pipe 291: Second vertical supply pipe
292: second horizontal supply pipe 300: connector

Claims (8)

a first process chamber in which processing of the first substrate is performed by supplying process gas to an upper side of the first substrate disposed in the first internal space;
a second process chamber arranged side by side with the first process chamber, wherein a processing process for the second substrate is performed by supplying a process gas to an upper side of the second substrate disposed in a second internal space;
a first gas supply pipe supplying process gas from a gas source to the first process chamber;
a second gas supply pipe supplying process gas from the gas source to the second process chamber;
a connection pipe communicating the first gas supply pipe and the second gas supply pipe;
A substrate processing device comprising:
According to clause 1,
A substrate processing apparatus, wherein the gas source is disposed below one or more of the first process chamber and the second process chamber.
According to clause 2,
The first gas supply pipe and the second gas supply pipe pass through a chamber body disposed between the first process chamber and the second process chamber.
According to clause 3,
The first gas supply pipe includes a first vertical supply pipe that extends vertically upward in a straight line and penetrates the chamber body, and a first gas supply pipe that extends horizontally to the upper side of the first process chamber in a bent path from the upper end of the first vertical supply pipe. 1 consists of a horizontal supply pipe;
The second gas supply pipe includes a second vertical supply pipe extending in a straight line upward from the gas source and penetrating the chamber body, and a path bent from the upper end of the second vertical supply pipe horizontally to the upper side of the second process chamber. A substrate processing device comprising an extended second horizontal supply pipe.
According to clause 4,
The portion where the first vertical supply pipe and the second vertical supply pipe penetrate the chamber body is formed as a vertical through hole that penetrates the chamber body in a vertical direction, and pipes are connected to the vertical through hole on the upper and lower sides of the chamber body. A substrate processing device characterized in that it is formed by being connected.
According to clause 4,
The connection pipe is a substrate processing device characterized in that it connects an upper end of the first vertical supply pipe and an upper end of the second vertical supply pipe.
According to any one of claims 3 to 6,
The first gas supply pipe and the second gas supply pipe pass through the chamber body and exchange heat with the chamber body at a higher temperature than the process gas supplied from the gas source, thereby supplying gas to the first process chamber and the second process chamber. A substrate processing device, characterized in that the process gas is supplied in a predetermined temperature range.
According to clause 7,
The temperature of the chamber body is maintained at 130°C to 180°C, the lower side of the chamber body is maintained at 20°C to 35°C, the upper side of the chamber body is not provided with a heating means, and the first process chamber and the A substrate processing apparatus, wherein the process gas supplied to the second process chamber has a temperature of 80°C to 120°C.

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