KR20240053115A - Novel tetracarboxylic acid anhydride, polyamic acid anc polyimide comprising the same - Google Patents
Novel tetracarboxylic acid anhydride, polyamic acid anc polyimide comprising the same Download PDFInfo
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- KR20240053115A KR20240053115A KR1020220132515A KR20220132515A KR20240053115A KR 20240053115 A KR20240053115 A KR 20240053115A KR 1020220132515 A KR1020220132515 A KR 1020220132515A KR 20220132515 A KR20220132515 A KR 20220132515A KR 20240053115 A KR20240053115 A KR 20240053115A
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- South Korea
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- formula
- group
- polyamic acid
- polyimide
- bis
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- 229920001721 polyimide Polymers 0.000 title claims abstract description 92
- 229920005575 poly(amic acid) Polymers 0.000 title claims abstract description 81
- 239000004642 Polyimide Substances 0.000 title claims abstract description 68
- 150000000000 tetracarboxylic acids Chemical class 0.000 title description 2
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims abstract description 94
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims abstract description 61
- 229920000642 polymer Polymers 0.000 claims abstract description 53
- 239000000203 mixture Substances 0.000 claims description 67
- 150000001875 compounds Chemical class 0.000 claims description 34
- 150000004985 diamines Chemical class 0.000 claims description 32
- 125000003118 aryl group Chemical group 0.000 claims description 29
- 125000000217 alkyl group Chemical group 0.000 claims description 17
- 125000003545 alkoxy group Chemical group 0.000 claims description 11
- 125000000623 heterocyclic group Chemical group 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical group CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- 125000004104 aryloxy group Chemical group 0.000 claims description 9
- 125000006376 (C3-C10) cycloalkyl group Chemical group 0.000 claims description 8
- 150000002431 hydrogen Chemical class 0.000 claims description 8
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims description 6
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 5
- 125000004427 diamine group Chemical group 0.000 claims description 5
- 125000004429 atom Chemical group 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- GBXQPDCOMJJCMJ-UHFFFAOYSA-M trimethyl-[6-(trimethylazaniumyl)hexyl]azanium;bromide Chemical compound [Br-].C[N+](C)(C)CCCCCC[N+](C)(C)C GBXQPDCOMJJCMJ-UHFFFAOYSA-M 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 150000003457 sulfones Chemical class 0.000 claims description 2
- RTWNYYOXLSILQN-UHFFFAOYSA-N methanediamine Chemical compound NCN RTWNYYOXLSILQN-UHFFFAOYSA-N 0.000 claims 1
- 239000008199 coating composition Substances 0.000 abstract 1
- -1 tetracarboxylic dianhydride compound Chemical class 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 32
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 30
- 238000006243 chemical reaction Methods 0.000 description 30
- 238000000034 method Methods 0.000 description 28
- 238000003786 synthesis reaction Methods 0.000 description 28
- 239000000758 substrate Substances 0.000 description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- 239000000178 monomer Substances 0.000 description 20
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 18
- 238000001723 curing Methods 0.000 description 16
- 239000011521 glass Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- 239000002904 solvent Substances 0.000 description 15
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 14
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 14
- 239000002253 acid Substances 0.000 description 13
- 239000012299 nitrogen atmosphere Substances 0.000 description 13
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 12
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 12
- 239000012153 distilled water Substances 0.000 description 12
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 12
- 239000002244 precipitate Substances 0.000 description 12
- 125000004432 carbon atom Chemical group C* 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 11
- 238000005481 NMR spectroscopy Methods 0.000 description 10
- 238000004891 communication Methods 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000003054 catalyst Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 239000000376 reactant Substances 0.000 description 9
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 8
- 238000007363 ring formation reaction Methods 0.000 description 8
- 239000000654 additive Substances 0.000 description 7
- 150000001412 amines Chemical class 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 125000001424 substituent group Chemical group 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- 150000008064 anhydrides Chemical class 0.000 description 6
- 125000001033 ether group Chemical group 0.000 description 6
- 239000000706 filtrate Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 6
- 229940100630 metacresol Drugs 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 6
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 6
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 5
- 150000003949 imides Chemical group 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 4
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 150000008065 acid anhydrides Chemical class 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 4
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 4
- 230000002194 synthesizing effect Effects 0.000 description 4
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical group C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 4
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical group C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 description 3
- NTZMSBAAHBICLE-UHFFFAOYSA-N 4-nitrobenzene-1,2-dicarbonitrile Chemical compound [O-][N+](=O)C1=CC=C(C#N)C(C#N)=C1 NTZMSBAAHBICLE-UHFFFAOYSA-N 0.000 description 3
- YGYCECQIOXZODZ-UHFFFAOYSA-N 4415-87-6 Chemical compound O=C1OC(=O)C2C1C1C(=O)OC(=O)C12 YGYCECQIOXZODZ-UHFFFAOYSA-N 0.000 description 3
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000002723 alicyclic group Chemical group 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 125000000753 cycloalkyl group Chemical group 0.000 description 3
- 125000006159 dianhydride group Chemical group 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229910000027 potassium carbonate Inorganic materials 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- 238000002411 thermogravimetry Methods 0.000 description 3
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 3
- 150000004961 triphenylmethanes Chemical class 0.000 description 3
- CTMHWPIWNRWQEG-UHFFFAOYSA-N 1-methylcyclohexene Chemical compound CC1=CCCCC1 CTMHWPIWNRWQEG-UHFFFAOYSA-N 0.000 description 2
- 238000005160 1H NMR spectroscopy Methods 0.000 description 2
- HOLGXWDGCVTMTB-UHFFFAOYSA-N 2-(2-aminophenyl)aniline Chemical group NC1=CC=CC=C1C1=CC=CC=C1N HOLGXWDGCVTMTB-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- HXDLWJWIAHWIKI-UHFFFAOYSA-N 2-hydroxyethyl acetate Chemical compound CC(=O)OCCO HXDLWJWIAHWIKI-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 2
- SYBYTAAJFKOIEJ-UHFFFAOYSA-N 3-Methylbutan-2-one Chemical compound CC(C)C(C)=O SYBYTAAJFKOIEJ-UHFFFAOYSA-N 0.000 description 2
- LJMPOXUWPWEILS-UHFFFAOYSA-N 3a,4,4a,7a,8,8a-hexahydrofuro[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1C2C(=O)OC(=O)C2CC2C(=O)OC(=O)C21 LJMPOXUWPWEILS-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- HBQQROSTUITFRH-UHFFFAOYSA-N 4-[1-(4-hexylphenyl)-1-(4-hydroxyphenyl)ethyl]phenol Chemical compound C1=CC(CCCCCC)=CC=C1C(C)(C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 HBQQROSTUITFRH-UHFFFAOYSA-N 0.000 description 2
- FAJNBUWLSYLTGH-UHFFFAOYSA-N 4-[2,2,2-trifluoro-1-(4-hydroxyphenyl)-1-[4-(trifluoromethyl)phenyl]ethyl]phenol Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C=1C=CC(=CC=1)C(F)(F)F)C1=CC=C(O)C=C1 FAJNBUWLSYLTGH-UHFFFAOYSA-N 0.000 description 2
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 2
- PBPYNPXJEIOCEL-UHFFFAOYSA-N 4-[[4-[(4-aminophenyl)methyl]phenyl]methyl]aniline Chemical compound C1=CC(N)=CC=C1CC(C=C1)=CC=C1CC1=CC=C(N)C=C1 PBPYNPXJEIOCEL-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 125000003342 alkenyl group Chemical group 0.000 description 2
- 150000004984 aromatic diamines Chemical class 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- WOSVXXBNNCUXMT-UHFFFAOYSA-N cyclopentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)C1C(O)=O WOSVXXBNNCUXMT-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical compound C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 description 2
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 125000001072 heteroaryl group Chemical group 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- WSKHYOXDVZCOJP-UHFFFAOYSA-N naphthalene-1,6-diamine Chemical compound NC1=CC=CC2=CC(N)=CC=C21 WSKHYOXDVZCOJP-UHFFFAOYSA-N 0.000 description 2
- ZDWYJINCYGEEJB-UHFFFAOYSA-N naphthalene-1,7-diamine Chemical compound C1=CC=C(N)C2=CC(N)=CC=C21 ZDWYJINCYGEEJB-UHFFFAOYSA-N 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- 125000006413 ring segment Chemical group 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- FADNCTVVKDWKIX-UHFFFAOYSA-N (2,4-diaminophenyl)methanol Chemical compound NC1=CC=C(CO)C(N)=C1 FADNCTVVKDWKIX-UHFFFAOYSA-N 0.000 description 1
- LYSJSRSBKUIFDF-UHFFFAOYSA-N (2-aminophenyl)-(3-aminophenyl)methanone Chemical compound NC1=CC=CC(C(=O)C=2C(=CC=CC=2)N)=C1 LYSJSRSBKUIFDF-UHFFFAOYSA-N 0.000 description 1
- OHLQBRYVKXJYHZ-UHFFFAOYSA-N (3,5-diaminophenyl)methanol Chemical compound NC1=CC(N)=CC(CO)=C1 OHLQBRYVKXJYHZ-UHFFFAOYSA-N 0.000 description 1
- YKNMIGJJXKBHJE-UHFFFAOYSA-N (3-aminophenyl)-(4-aminophenyl)methanone Chemical compound C1=CC(N)=CC=C1C(=O)C1=CC=CC(N)=C1 YKNMIGJJXKBHJE-UHFFFAOYSA-N 0.000 description 1
- RYNQKSJRFHJZTK-UHFFFAOYSA-N (3-methoxy-3-methylbutyl) acetate Chemical compound COC(C)(C)CCOC(C)=O RYNQKSJRFHJZTK-UHFFFAOYSA-N 0.000 description 1
- OLQWMCSSZKNOLQ-ZXZARUISSA-N (3s)-3-[(3r)-2,5-dioxooxolan-3-yl]oxolane-2,5-dione Chemical compound O=C1OC(=O)C[C@H]1[C@@H]1C(=O)OC(=O)C1 OLQWMCSSZKNOLQ-ZXZARUISSA-N 0.000 description 1
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- JDGFELYPUWNNGR-UHFFFAOYSA-N 1,2,3,3a,4,5,6,6a-octahydropentalene-1,3,4,6-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C2C(C(=O)O)CC(C(O)=O)C21 JDGFELYPUWNNGR-UHFFFAOYSA-N 0.000 description 1
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- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000006358 imidation reaction Methods 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 125000003453 indazolyl group Chemical group N1N=C(C2=C1C=CC=C2)* 0.000 description 1
- 125000003406 indolizinyl group Chemical group C=1(C=CN2C=CC=CC12)* 0.000 description 1
- 125000001041 indolyl group Chemical group 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000003384 isochromanyl group Chemical group C1(OCCC2=CC=CC=C12)* 0.000 description 1
- 125000000904 isoindolyl group Chemical group C=1(NC=C2C=CC=CC12)* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 1
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 1
- 125000001786 isothiazolyl group Chemical group 0.000 description 1
- 125000000842 isoxazolyl group Chemical group 0.000 description 1
- 239000004849 latent hardener Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- 125000004573 morpholin-4-yl group Chemical group N1(CCOCC1)* 0.000 description 1
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 description 1
- GISJHCLTIVIGLX-UHFFFAOYSA-N n-[4-[(4-chlorophenyl)methoxy]pyridin-2-yl]-2-(2,6-difluorophenyl)acetamide Chemical compound FC1=CC=CC(F)=C1CC(=O)NC1=CC(OCC=2C=CC(Cl)=CC=2)=CC=N1 GISJHCLTIVIGLX-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- OKBVMLGZPNDWJK-UHFFFAOYSA-N naphthalene-1,4-diamine Chemical compound C1=CC=C2C(N)=CC=C(N)C2=C1 OKBVMLGZPNDWJK-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- GOGZBMRXLADNEV-UHFFFAOYSA-N naphthalene-2,6-diamine Chemical compound C1=C(N)C=CC2=CC(N)=CC=C21 GOGZBMRXLADNEV-UHFFFAOYSA-N 0.000 description 1
- HBJPJUGOYJOSLR-UHFFFAOYSA-N naphthalene-2,7-diamine Chemical compound C1=CC(N)=CC2=CC(N)=CC=C21 HBJPJUGOYJOSLR-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000002560 nitrile group Chemical group 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- 125000002971 oxazolyl group Chemical group 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- UFOIOXZLTXNHQH-UHFFFAOYSA-N oxolane-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1OC(C(O)=O)C(C(O)=O)C1C(O)=O UFOIOXZLTXNHQH-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000004934 phenanthridinyl group Chemical group C1(=CC=CC2=NC=C3C=CC=CC3=C12)* 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 125000001791 phenazinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3N=C12)* 0.000 description 1
- 125000001484 phenothiazinyl group Chemical group C1(=CC=CC=2SC3=CC=CC=C3NC12)* 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid group Chemical group C(C=1C(C(=O)O)=CC=CC1)(=O)O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 1
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 1
- 125000004193 piperazinyl group Chemical group 0.000 description 1
- 125000003386 piperidinyl group Chemical group 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 125000001042 pteridinyl group Chemical group N1=C(N=CC2=NC=CN=C12)* 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 125000000561 purinyl group Chemical group N1=C(N=C2N=CNC2=C1)* 0.000 description 1
- 125000004309 pyranyl group Chemical group O1C(C=CC=C1)* 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- 125000003226 pyrazolyl group Chemical group 0.000 description 1
- 125000002098 pyridazinyl group Chemical group 0.000 description 1
- JREWFSHZWRKNBM-UHFFFAOYSA-N pyridine-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1=CN=C(C(O)=O)C(C(O)=O)=C1C(O)=O JREWFSHZWRKNBM-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 125000000719 pyrrolidinyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000006798 ring closing metathesis reaction Methods 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 238000000807 solvent casting Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 125000000335 thiazolyl group Chemical group 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 125000005505 thiomorpholino group Chemical group 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- KYWIYKKSMDLRDC-UHFFFAOYSA-N undecan-2-one Chemical compound CCCCCCCCCC(C)=O KYWIYKKSMDLRDC-UHFFFAOYSA-N 0.000 description 1
- KLNPWTHGTVSSEU-UHFFFAOYSA-N undecane-1,11-diamine Chemical compound NCCCCCCCCCCCN KLNPWTHGTVSSEU-UHFFFAOYSA-N 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
- C07D307/02—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings
- C07D307/34—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members
- C07D307/56—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D307/60—Two oxygen atoms, e.g. succinic anhydride
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1075—Partially aromatic polyimides
- C08G73/1082—Partially aromatic polyimides wholly aromatic in the tetracarboxylic moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1085—Polyimides with diamino moieties or tetracarboxylic segments containing heterocyclic moieties
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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Abstract
본 발명은 신규 테트라카복실산 이무수물, 이를 이용하여 제조된 폴리아믹산과 폴리이미드 중합체, 및 이를 이용하는 전자기기용 고분자 코팅 조성물 및 필름을 제공한다.The present invention provides a novel tetracarboxylic dianhydride, polyamic acid and polyimide polymer prepared using the same, and a polymer coating composition and film for electronic devices using the same.
Description
본 발명은 신규 테트라카복실산 이무수물, 상기 테트라카복실산 이무수물을 포함하는 폴리아믹산과 폴리이미드 중합체, 이를 이용하는 필름 및 전자기기용 고분자 코팅 소재에 관한 것이다.The present invention relates to a novel tetracarboxylic dianhydride, polyamic acid and polyimide polymer containing the tetracarboxylic dianhydride, films using the same, and polymer coating materials for electronic devices.
스마트폰과 같은 다양한 전자 기기의 개발과 보급이 가속화됨에 따라 초고속, 대용량의 데이터를 무선으로 전송할 수 있는 5G 통신 기술의 중요성이 커지고 있으며, 스마트폰 단말기를 비롯한 통신 기기에 사용되는 통신용 부품 소재의 수요 또한 급증하고 있다.As the development and distribution of various electronic devices such as smartphones accelerates, the importance of 5G communication technology, which can wirelessly transmit high-speed, large-capacity data, is increasing, and the demand for communication components and materials used in communication devices including smartphone terminals is increasing. It is also rapidly increasing.
폴리이미드(Polyimide, PI)는 내열성이 높은 고분자 물질로 우수한 기계적 특성, 전기절연성, 저유전, 저유전손실 등의 특성을 가지고 있으며, 다른 소재에 비해 가벼울 뿐 아니라 유연성까지 갖추고 있다. 이로 인해 코팅, 필름, 접착제 등 그 용도가 다양하며, 반도체의 통신 회로, 디스플레이 인쇄 배선 회로용 기판 등의 전자재료에 광범위한 분야에서 사용되고 있다.Polyimide (PI) is a highly heat-resistant polymer material that has excellent mechanical properties, electrical insulation, low dielectric constant, and low dielectric loss. It is not only lighter than other materials, but also flexible. Because of this, its uses are diverse, including coatings, films, and adhesives, and it is used in a wide range of electronic materials such as semiconductor communication circuits and display printed wiring circuit boards.
한편 기존 4G 통신 소재로는 주로 일반적인 폴리이미드가 사용되었으나, 5G 통신을 위한 주파수 영역 대역에 사용하기에는 비교적 높은 유전율(Dk)과 유전손실(Df) 값을 갖고 있다. Meanwhile, common polyimide was mainly used as the existing 4G communication material, but it has relatively high dielectric constant (Dk) and dielectric loss (Df) values to be used in the frequency band for 5G communication.
이에 따라, 고내열성을 만족함과 동시에 고주파 대역(Sub-6 및 28 GHz)에서 저유전 및 저유전손실 특성을 갖는 새로운 폴리이미드의 개발이 필요하다.Accordingly, there is a need to develop a new polyimide that satisfies high heat resistance and has low dielectric and low dielectric loss characteristics in high frequency bands (Sub-6 and 28 GHz).
본 발명은 전술한 문제점을 해결하기 위해 안출된 것으로서, 분자 내 트리페닐메탄기와 에테르기를 기본적인 백본으로 하며, 기능성 모이어티를 포함하는 신규 테트라카복실산 이무수물을 제공하는 것을 기술적 과제로 한다. The present invention was devised to solve the above-mentioned problems, and its technical task is to provide a novel tetracarboxylic dianhydride containing a functional moiety and a triphenylmethane group and an ether group in the molecule as the basic backbone.
또한 본 발명은 전술한 테트라카복실산 이무수물을 이용하여 적정 수준의 내열성 및 기계적 특성을 유지하면서도, 낮은 유전율과 유전손실율을 갖는 가용성 폴리아믹산 또는 폴리이미드 및 이를 포함하는 고분자 필름 및 전자기기용 고분자 코팅 소재를 제공하기 위한 것을 또 다른 기술적 과제로 한다.In addition, the present invention provides a soluble polyamic acid or polyimide having a low dielectric constant and dielectric loss rate while maintaining an appropriate level of heat resistance and mechanical properties using the above-described tetracarboxylic dianhydride, a polymer film containing the same, and a polymer coating material for electronic devices. Another technical task is to provide
본 발명의 다른 목적 및 이점은 하기 발명의 상세한 설명 및 청구범위에 의해 보다 명확하게 설명될 수 있다. Other objects and advantages of the present invention can be more clearly explained by the following detailed description and claims.
상기한 기술적 과제를 달성하기 위해, 본 발명은 하기 화학식 1로 표시되는 화합물, 구체적으로 폴리아믹산 또는 폴리이미드 형성용 테트라카복실산 이무수물을 제공한다. In order to achieve the above-described technical problem, the present invention provides a compound represented by the following formula (1), specifically, tetracarboxylic dianhydride for forming polyamic acid or polyimide.
[화학식 1][Formula 1]
상기 화학식 1에서, In Formula 1,
R1 내지 R3는 서로 동일하거나 또는 상이하며, 각각 독립적으로 수소, 할로겐, C1~C20의 알킬기, C1~C20의 알킬옥시기, C3~C10의 시클로알킬기, C6~C20의 아릴기, C6~C20의 아릴옥시기, 핵원자수 5 내지 20의 복소환기, 및 -(CF2)n-CF3 (여기서, n은 0 내지 5 사이의 정수임)로 구성되는 군으로부터 선택되고,R 1 to R 3 are the same or different from each other, and are each independently hydrogen, halogen, C 1 to C 20 alkyl group, C 1 to C 20 alkyloxy group, C 3 to C 10 cycloalkyl group, C 6 to Consists of an aryl group of C 20 , an aryloxy group of C 6 ~ C 20 , a heterocyclic group of 5 to 20 nuclear atoms, and -(CF 2 ) n -CF 3 (where n is an integer between 0 and 5) selected from the group that is,
R4는 수소, C1~C20의 알킬기, C3~C10의 시클로알킬기, C6~C20의 아릴기, 및 트라이플루오로메틸기로 선택되고,R 4 is selected from hydrogen, a C 1 to C 20 alkyl group, a C 3 to C 10 cycloalkyl group, a C 6 to C 20 aryl group, and a trifluoromethyl group,
R5 및 R6은 각각 독립적으로 C1~C20의 알킬기이며, R 5 and R 6 are each independently an alkyl group of C 1 to C 20 ,
a와 b는 각각 독립적으로 0 내지 4의 정수이다. a and b are each independently integers from 0 to 4.
또한 본 발명은 전술한 화학식 1의 화합물을 함유하는 테트라카복실산 이무수물; 및 디아민;을 포함하는 폴리아믹산 조성물을 제공한다In addition, the present invention provides tetracarboxylic dianhydride containing the compound of formula 1 described above; It provides a polyamic acid composition containing; and diamine.
또한 본 발명은 전술한 폴리아믹산 조성물을 이미드화하여 얻어지는 폴리이미드 중합체를 제공한다.Additionally, the present invention provides a polyimide polymer obtained by imidizing the above-described polyamic acid composition.
본 발명의 일 실시예에 따르면, 트리페닐메탄 코어와 에테르기를 포함하는 신규 테트라카복실산 이무수물 단량체를 사용함으로써, 폴리이미드 고유의 높은 내열성 및 우수한 기계적 특성을 유지함과 동시에 낮은 유전율과 유전손실율을 갖는 가용성 폴리아믹산 또는 폴리이미드; 및 이를 포함하는 고분자 필름 및 전자기기용 고분자 코팅 소재를 제공할 수 있다.According to one embodiment of the present invention, by using a novel tetracarboxylic dianhydride monomer containing a triphenylmethane core and an ether group, polyimide maintains the high heat resistance and excellent mechanical properties inherent in polyimide and has a low dielectric constant and dielectric loss rate. polyamic acid or polyimide; And a polymer film containing the same and a polymer coating material for electronic devices can be provided.
이에 따라, 본 발명의 폴리이미드 필름은 전자기기용 기판, 전기 및 전자부품용 코팅 소재로 유용하게 사용될 뿐만 아니라 그 외 다양한 분야에 적용 가능하다.Accordingly, the polyimide film of the present invention is not only useful as a substrate for electronic devices and a coating material for electrical and electronic components, but can also be applied to various other fields.
본 발명에 따른 효과는 이상에서 예시된 내용에 의해 제한되지 않으며, 보다 다양한 효과들이 본 명세서 내에 포함되어 있다.The effects according to the present invention are not limited to the contents exemplified above, and more diverse effects are included in the present specification.
본 명세서에서 사용되는 모든 용어(기술 및 과학적 용어를 포함)는, 다른 정의가 없다면, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 공통적으로 이해될 수 있는 의미로 사용될 수 있을 것이다. 또 일반적으로 사용되는 사전에 정의되어 있는 용어들은 명백하게 특별히 정의되어 있지 않은 한 이상적으로 또는 과도하게 해석되지 않는다.All terms (including technical and scientific terms) used in this specification, unless otherwise defined, may be used with meanings that can be commonly understood by those skilled in the art to which the present invention pertains. Additionally, terms defined in commonly used dictionaries are not interpreted ideally or excessively unless clearly specifically defined.
또한 본 명세서 전체에서, 어떤 부분이 어떤 구성요소를 "포함" 한다고 할 때, 이는 특별히 반대되는 기재가 없는 한, 다른 구성요소를 제외하는 것이 아니라 다른 구성요소를 더 포함할 가능성을 내포하는 개방형 용어(open-ended terms)로 이해되어야 한다. 또한, 명세서 전체에서, "위에" 또는 "상에"라 함은 대상 부분의 위 또는 아래에 위치하는 경우 뿐만 아니라 그 중간에 또 다른 부분이 있는 경우도 포함함을 의미하는 것이며, 반드시 중력 방향을 기준으로 위쪽에 위치하는 것을 의미하는 것은 아니다.In addition, throughout this specification, when a part is said to "include" a certain component, unless specifically stated to the contrary, this is an open term that implies the possibility of further including other components rather than excluding other components. It should be understood as (open-ended terms). In addition, throughout the specification, “above” or “on” means not only the case where it is located above or below the object part, but also the case where there is another part in the middle, and it must be in the direction of gravity. It does not mean that it is located above the standard.
본 명세서에서 사용되는 "바람직한" 및 "바람직하게"는 소정 환경 하에서 소정의 이점을 제공할 수 있는 본 발명의 실시 형태를 지칭한다. 그러나, 동일한 환경 또는 다른 환경 하에서, 다른 실시 형태가 또한 바람직할 수 있다. 추가로, 하나 이상의 바람직한 실시 형태의 언급은 다른 실시 형태가 유용하지 않다는 것을 의미하지 않으며, 본 발명의 범주로부터 다른 실시 형태를 배제하고자 하는 것은 아니다.As used herein, “preferred” and “preferably” refer to embodiments of the invention that may provide certain advantages under certain circumstances. However, under the same or different circumstances, other embodiments may also be preferred. Additionally, mention of one or more preferred embodiments does not mean that other embodiments are not useful, nor is it intended to exclude other embodiments from the scope of the invention.
또한, 본 명세서 중에 있어서, "단량체" 와 "모노머"는 동일한 의미이다. 본 발명에 있어서의 단량체는 올리고머 및 폴리머와 구별되고, 중량 평균 분자량(Mw)이 1,000 g/mol 이하인 화합물을 지칭한다. 또한 중합체라는 용어는 호모폴리머, 공중합체(copolymer), 및 수지(resin)을 모두 포함한다. In addition, in this specification, “monomer” and “monomer” have the same meaning. Monomers in the present invention are distinguished from oligomers and polymers, and refer to compounds with a weight average molecular weight (Mw) of 1,000 g/mol or less. The term polymer also includes homopolymers, copolymers, and resins.
일반적으로 폴리이미드계 중합체는 높은 내열성, 우수한 기계적 특성 및 저유전 특성을 가지고 있어, 통신소재로 주로 사용되는 물질 중 하나이다. 최근 통신기술의 발달로 10 GHz 이상의 고주파수 대역을 사용하는 차세대 통신 소재가 요구되고 있는데, 상술한 종래 폴리이미드계 중합체를 5G 통신소재료 적용하기에는 유전율(Dk) 및 유전손실(Df) 값이 비교적 높다는 문제점이 있다.In general, polyimide polymers have high heat resistance, excellent mechanical properties, and low dielectric properties, and are one of the materials mainly used as communication materials. With the recent development of communication technology, there is a demand for next-generation communication materials that use high frequency bands of 10 GHz or higher. However, the problem of applying the above-described conventional polyimide polymer as a 5G communication material is that the dielectric constant (Dk) and dielectric loss (Df) values are relatively high. There is.
이에, 본 발명은 고주파수 대역에서 저유전, 저유전손실 특성을 가질 뿐만 아니라 고내열성 및 우수한 기계적 특성을 유지하는 폴리이미드 소재을 개발하고자, 기능성 모이어티들을 펜던트 그룹으로 갖는 트리페닐메탄 유도체를 포함함과 동시에 에테르기가 도입된 신규 테트라카복실산 이무수물 화합물을 폴리이미드 중합체의 단량체로 사용하는 것을 특징으로 한다. 상기 폴리이미드 중합체는 고분자 주쇄에 에테르 결합이 포함될 뿐만 아니라 기능성 모이어티, 예컨대 트리플루오로메틸기, 알킬옥시기, 지방족 유도체 등이 적어도 하나 이상 도입됨으로써 저유전율 및 저유전손실 특성을 확보할 수 있다. 또한 고분자의 주쇄와 다른 평면 상에 존재하는 트리페닐메탄 유도체를 기본 골격 구조로 도입함으로써, 제조된 중합체 내에 Free volume을 확보하여 내열성 및 기계적특성 저하 없이 개선된 용해도 특성을 확보할 수 있다.Accordingly, the present invention aims to develop a polyimide material that not only has low dielectric and low dielectric loss characteristics in the high frequency band, but also maintains high heat resistance and excellent mechanical properties, and includes a triphenylmethane derivative having functional moieties as pendant groups. At the same time, it is characterized by using a new tetracarboxylic dianhydride compound into which an ether group is introduced as a monomer of the polyimide polymer. The polyimide polymer not only contains an ether bond in the polymer main chain, but also has at least one functional moiety, such as a trifluoromethyl group, an alkyloxy group, or an aliphatic derivative, thereby securing low dielectric constant and low dielectric loss characteristics. In addition, by introducing a triphenylmethane derivative that exists on a different plane from the main chain of the polymer into the basic skeleton structure, free volume can be secured in the manufactured polymer, thereby ensuring improved solubility characteristics without deteriorating heat resistance and mechanical properties.
아울러, 본 발명에서는 용해도가 개선된 폴리이미드 또는 폴리아미드이미드 중합체를 제시함에 따라 폴리이미드 또는 폴리아미드이미드 상태의 조성물을 제공할 수 있다. 이에 따라 불안정한 폴리아믹산 상태에서 필름화 과정을 거치는 대신, 안정한 폴리이미드 상태의 폴리아미드이미드 조성물의 고형분의 양을 조절한 후 상기 조성물을 기판에 도포하고 단순히 용매 휘발 공정만을 거치더라도 필름화가 가능하다는 장점이 있다.In addition, the present invention can provide a composition in the form of polyimide or polyamidoimide by presenting a polyimide or polyamidoimide polymer with improved solubility. Accordingly, instead of going through the film formation process in an unstable polyamic acid state, the advantage is that film formation is possible by adjusting the amount of solid content of the polyamidoimide composition in a stable polyimide state, applying the composition to the substrate, and simply going through the solvent volatilization process. There is.
전술한 바와 같이, 본 발명에서는 가용성 폴리이미드 중합체를 통해 우수한 열적, 기계적 특성을 유지하면서 개선된 저유전 특성과 가공성 특성을 갖는 폴리이미드 필름을 제공할 수 있으며, 이러한 고분자 필름은 당 분야에 공지된 통상의 전자기기용 기판, 전기 및 전자부품용 코팅 소재로서 유용하게 적용될 수 있다As described above, the present invention can provide a polyimide film with improved low dielectric properties and processability properties while maintaining excellent thermal and mechanical properties through a soluble polyimide polymer, and this polymer film is made of a polyimide film known in the art. It can be usefully applied as a coating material for substrates for general electronic devices and electrical and electronic components.
<테트라카복실산 이무수물><Tetracarboxylic dianhydride>
본 발명의 일 실시예는, 폴리아믹산 및/또는 폴리이미드 중합체를 제조하기 위한 테트라카복실산 이무수물(tetracarboxylic acid anhydride) 단량체이다. 이러한 테트라카복실산 이무수물 단량체는 트리페닐메탄기를 중심으로 하여 그 양측에 에테르기가 연결된 기본골격에 기능성 모이어티가 포함된다는 점에서, 종래 테트라카복실산 이무수물과 차별화된다. One embodiment of the present invention is tetracarboxylic acid anhydride monomer for producing polyamic acid and/or polyimide polymer. This tetracarboxylic dianhydride monomer is differentiated from conventional tetracarboxylic dianhydride in that it contains a functional moiety in the basic skeleton centered around a triphenylmethane group and ether groups connected to both sides.
일 구체예를 들면, 상기 테트라카복실산 이무수물 단량체는 하기 화학식 1로 표시될 수 있다. For one specific example, the tetracarboxylic dianhydride monomer may be represented by the following formula (1).
상기 화학식 1에서, In Formula 1,
R1 내지 R3는 서로 동일하거나 또는 상이하며, 각각 독립적으로 수소, 할로겐, C1~C20의 알킬기, C1~C20의 알킬옥시기, C3~C10의 시클로알킬기, C6~C20의 아릴기, C6~C20의 아릴옥시기, 핵원자수 5 내지 20의 복소환기, 및 -(CF2)n-CF3 (여기서, n은 0 내지 5 사이의 정수임)로 구성되는 군으로부터 선택되고,R 1 to R 3 are the same or different from each other, and are each independently hydrogen, halogen, C 1 to C 20 alkyl group, C 1 to C 20 alkyloxy group, C 3 to C 10 cycloalkyl group, C 6 to Consists of an aryl group of C 20 , an aryloxy group of C 6 ~ C 20 , a heterocyclic group of 5 to 20 nuclear atoms, and -(CF 2 ) n -CF 3 (where n is an integer between 0 and 5) selected from the group that is,
R4는 수소, C1~C20의 알킬기, C3~C10의 시클로알킬기, C6~C20의 아릴기, 및 트라이플루오로메틸기로 선택되고,R 4 is selected from hydrogen, a C 1 to C 20 alkyl group, a C 3 to C 10 cycloalkyl group, a C 6 to C 20 aryl group, and a trifluoromethyl group,
R5 및 R6은 각각 독립적으로 C1~C20의 알킬기이며, R 5 and R 6 are each independently an alkyl group of C 1 to C 20 ,
a와 b는 각각 독립적으로 0 내지 4의 정수이다. a and b are each independently integers from 0 to 4.
상기 화학식 1의 일 구체예를 들면, R1 내지 R3는 서로 동일하거나 또는 상이하며, 각각 독립적으로 수소, C1~C10의 알킬기, C1~C10의 알킬옥시기, C3~C10의 시클로알킬기, C6~C12의 아릴기, 및 C6~C12의 아릴옥시기로 구성된 군에서 선택될 수 있다. 보다 구체적으로, R1 내지 R3 중 적어도 하나는 수소를 비(非)포함하며, C1~C10의 알킬기, C1~C10의 알킬옥시기, 및 C3~C10의 시클로알킬기로 구성된 군에서 선택될 수 있다. In one specific example of Formula 1, R 1 to R 3 are the same or different from each other, and are each independently hydrogen, a C 1 to C 10 alkyl group, a C 1 to C 10 alkyloxy group, and C 3 to C It may be selected from the group consisting of a 10 cycloalkyl group, a C 6 to C 12 aryl group, and a C 6 to C 12 aryloxy group. More specifically, at least one of R 1 to R 3 does not contain hydrogen and is composed of a C 1 to C 10 alkyl group, a C 1 to C 10 alkyloxy group, and a C 3 to C 10 cycloalkyl group. It may be selected from a group consisting of:
또한 R4는 C1~C10의 알킬기, 또는 -(CF2)n-CF3 (여기서, n은 0 내지 3 사이의 정수임)일 수 있다. Additionally, R 4 may be an alkyl group of C 1 to C 10 , or -(CF 2 ) n -CF 3 (where n is an integer between 0 and 3).
전술한 R1 내지 R4의 알킬기, 알킬옥시기, 시클로알킬기, 아릴기, 아릴옥시기 및 복소환기는 각각 독립적으로 각각 독립적으로 중수소, 할로겐, 시아노기, C1~C10의 알킬기, C1~C10의 알킬옥시기, C3~C10의 시클로알킬기, C6~C12의 아릴기, C6~C12의 아릴옥시기, 및 핵원자수 5 내지 10의 헤테로아릴기로 구성된 군에서 선택되는 1종 이상의 치환기로 치환 또는 비치환될 수 있다. The above-described alkyl group, alkyloxy group, cycloalkyl group, aryl group, aryloxy group and heterocyclic group of R 1 to R 4 are each independently selected from deuterium, halogen, cyano group, C 1 to C 10 alkyl group, C 1 From the group consisting of an alkyloxy group of ~C 10 , a cycloalkyl group of C 3 ~C 10 , an aryl group of C 6 ~C 12 , an aryloxy group of C 6 ~C 12 , and a heteroaryl group of 5 to 10 nuclear atoms. It may be substituted or unsubstituted with one or more selected substituents.
전술한 화학식 1로 표시되는 신규 테트라카복시산 이무수물은, 분자 골격 내 에테르기를 포함함과 동시에 펜던트 그룹으로 불소함량이 높은 트리플루오로메틸기, 알킬기, 시크로헥실기 등의 기능성 모이어티들을 적어도 하나 이상 포함한다. 이에 따라 전술한 테트라카복실산 이무수물을 사용한 폴리이미드계 중합체는 낮은 유전특성을 기대할 수 있다. The novel tetracarboxylic dianhydride represented by the above-mentioned formula 1 contains an ether group in the molecular skeleton and at least one functional moiety such as a trifluoromethyl group, an alkyl group, and a cyclohexyl group with a high fluorine content as a pendant group. Includes above. Accordingly, the polyimide-based polymer using the above-described tetracarboxylic dianhydride can be expected to have low dielectric properties.
또한, 상기 테트라카르실산 이무수물은 트리페닐메탄 유도체를 코어(Core)로 사용함에 따라 분자 내에 방향족 고리들의 평면 배치를 저해하여 분자 내 및/또는 분자간 π-π 적층 현상 방지를 기대할 수 있고, 고분자 주쇄와 다른 평면 상에 펜던트 그룹으로 존재하는 특정 기능성 모이어티로 인해 폴리이미드 중합체 내에 Free volume 확보가 가능하다. 이에 따라, 전술한 테트라카복실산 이무수물을 적용한 폴리이미드계 중합체는 중합체 사슬 사이에 용매 분자가 용이하게 진입할 수 있어 중합체의 용해도를 증가시킬 수 있으며, 종래 불용·불융의 단점을 갖는 폴리이미드의 가공성 향상을 기대할 수 있다.In addition, as the tetracarsylic dianhydride uses a triphenylmethane derivative as a core, it can be expected to prevent the intramolecular and/or intermolecular π-π stacking phenomenon by inhibiting the planar arrangement of aromatic rings within the molecule, and the polymer Free volume can be secured within the polyimide polymer due to specific functional moieties that exist as pendant groups on a plane different from the main chain. Accordingly, the polyimide-based polymer to which the above-described tetracarboxylic dianhydride is applied allows solvent molecules to easily enter between the polymer chains, thereby increasing the solubility of the polymer and improving the processability of polyimide, which has the disadvantage of being insoluble and infusible. Improvement can be expected.
바람직한 일례를 들면, 상기 화학식 1로 표시되는 화합물은 R1 내지 R4의 종류 및 이들의 결합 위치에 따라 하기 화학식 2 내지 화학식 6 중 어느 하나로 보다 구체화될 수 있다. 그러나 이에 한정되는 것은 아니다. As a preferred example, the compound represented by Formula 1 may be further specified as one of the following Formulas 2 to 6 depending on the type of R 1 to R 4 and their bonding positions. However, it is not limited to this.
[화학식 2][Formula 2]
[화학식 3][Formula 3]
[화학식 4][Formula 4]
[화학식 5][Formula 5]
[화학식 6][Formula 6]
상기 식에서, In the above equation,
R1 내지 R4는 각각 화학식 1에서 정의된 바와 같으며, 단 수소는 제외된다. R 1 to R 4 are each as defined in Formula 1, except hydrogen.
이상에서 설명한 본 발명의 화학식 1로 표시되는 화합물은 하기 예시되는 화합물로 보다 구체화될 수 있다. 그러나 본 발명의 화학식 1로 표시되는 화합물이 하기 예시된 것들에 의해 한정되는 것은 아니다.The compound represented by Formula 1 of the present invention described above may be further specified as the compounds exemplified below. However, the compound represented by Formula 1 of the present invention is not limited to those exemplified below.
이하, 본 발명의 일 실시형태에 따른 신규 테트라카복실산 이무수물의 제조방법에 대해 설명한다. 그러나 하기 제조방법에 의해서만 한정되는 것은 아니며, 필요에 따라 각 공정의 단계가 변형되거나 또는 선택적으로 혼용되어 수행될 수 있다. Hereinafter, a method for producing a novel tetracarboxylic dianhydride according to an embodiment of the present invention will be described. However, it is not limited to the following manufacturing method, and the steps of each process may be modified or selectively mixed as needed.
상기 테트라카복실산 이무수물은 당 분야에 공지된 통상의 방법에 따라 제조될 수 있으며, 구체적으로 하기 반응식 1에 따라 제조 가능하다. 이러한 제조방법의 일 실시예를 들면, 디하이드록시 화합물을 합성하는 단계; 상기 디하이드록시 화합물과 4-니트로프탈로니트릴을 반응하여 디프탈로니트릴 화합물을 합성하는 단계; 상기 디프탈로니트릴 화합물 내 포함된 니트릴기를 산화하여 디프탈릭산 화합물을 합성하는 단계; 및 상기 디프탈릭산 화합물이 함유하는 프탈릭산기을 탈수 축합반응하여 테트라카르복실릭 이무수물 화합물을 합성하는 단계;를 포함할 수 있다.The tetracarboxylic dianhydride can be prepared according to common methods known in the art, and specifically according to Scheme 1 below. An example of this manufacturing method includes synthesizing a dihydroxy compound; Synthesizing a diphthalonitrile compound by reacting the dihydroxy compound with 4-nitrophthalonitrile; Synthesizing a diphthalic acid compound by oxidizing the nitrile group contained in the diphthalonitrile compound; And it may include a step of synthesizing a tetracarboxylic dianhydride compound by dehydrating and condensing the phthalic acid group contained in the diphthalic acid compound.
[반응식 1][Scheme 1]
본 명세서에서 사용되는 용어 "알킬기"는 탄소수 1 내지 20(구체적으로, 탄소수 1~10)의 직쇄 또는 측쇄의 포화 탄화수소에서 유래되는 1가의 치환기를 의미한다. 일 실시예로, 상기 알킬은 메틸, 에틸, 프로필, 이소부틸, sec-부틸, 펜틸, iso-아밀, 헥실 등으로 이루어진 군에서 선택될 수 있지만, 이에 제한되지 않는다.The term “alkyl group” used herein refers to a monovalent substituent derived from a straight-chain or branched-chain saturated hydrocarbon having 1 to 20 carbon atoms (specifically, 1 to 10 carbon atoms). In one embodiment, the alkyl may be selected from the group consisting of methyl, ethyl, propyl, isobutyl, sec-butyl, pentyl, iso-amyl, hexyl, etc., but is not limited thereto.
본 명세서에서 사용되는 용어 "알케닐기"는 탄소-탄소 이중 결합을 1개 이상 가진 탄소수 2 내지 20(구체적으로, 탄소수 2~10)의 직쇄 또는 측쇄의 불포화 탄화수소에서 유래되는 1가의 치환기를 의미한다. 일 실시예로, 상기 알케닐은 비닐(vinyl), 알릴(allyl), 이소프로펜일(isopropenyl), 2-부텐일(2-butenyl) 등으로 이루어진 군에서 선택될 수 있지만, 이에 제한되지 않는다.The term "alkenyl group" as used herein refers to a monovalent substituent derived from a straight or branched unsaturated hydrocarbon having 2 to 20 carbon atoms (specifically, 2 to 10 carbon atoms) having one or more carbon-carbon double bonds. . In one embodiment, the alkenyl may be selected from the group consisting of vinyl, allyl, isopropenyl, 2-butenyl, etc., but is not limited thereto.
본 명세서에서 사용되는 용어 "아릴기"는 단독 고리 또는 2 이상의 고리가 조합된 탄소수 6 내지 20(구체적으로, 탄소수 6~10)의 방향족 탄화수소로부터 유래된 1가의 치환기를 의미한다. 또한, 2 이상의 고리가 서로 단순 부착되거나 축합된 형태도 포함될 수 있다. 일 실시예로, 상기 아릴은 페닐, 나프틸, 페난트릴, 안트릴 등으로 이루어진 군에서 선택될 수 있지만, 이에 제한되지 않는다.As used herein, the term “aryl group” refers to a monovalent substituent derived from an aromatic hydrocarbon having 6 to 20 carbon atoms (specifically, 6 to 10 carbon atoms) consisting of a single ring or a combination of two or more rings. In addition, forms in which two or more rings are simply attached or condensed to each other may also be included. In one embodiment, the aryl may be selected from the group consisting of phenyl, naphthyl, phenanthryl, anthryl, etc., but is not limited thereto.
본 명세서에서 사용되는 용어 "복소환기"는 N, O, S, 및 Se로 이루어진 군에서 선택되는 하나 이상의 헤테로원자를 갖고, 나머지는 C 원자(들)로 이루어진 환형의 1가 치환기를 의미한다. 이때, '복소환기'는 단일환이거나 다중환일 수 있다. 복소환기가 방향족고리인 경우, 헤테로아릴기라 하며, 복소환기가 지환족고린 경우, 이는 헤테로시클로알킬기라 한다. 복소환기는 4원, 5원, 6원, 7원 또는 8원 고리를 포함하는 환형 기일 수 있으며, 여기서 상기 고리는 N, O, Se 및 S로 이루어진 군으로부터 선택된 1 이상의 고리 원자를 포함하고, 나머지 고리 원자로서 C를 가진다. 일 실시예로, 상기 복소환기는 피롤리디닐기, 피페리디닐기, 피페라지닐기, 모르폴리노기, 티오모르폴리노기, 호모피페리디닐기, 크로마닐기, 이소크로마닐기, 크로메닐기, 피롤릴기, 푸라닐기, 티에닐기, 피라졸릴기, 이미다졸릴기, 푸라자닐기, 옥사졸릴기, 이속사졸릴기, 티아졸릴기, 이소티아졸릴기, 피리딜기, 피리다지닐기, 피리미디닐기, 피라지닐기, 피라닐기, 인돌릴기, 이소인돌릴기, 인다졸릴기, 푸리닐기, 인돌리지닐기, 퀴놀리닐기, 이소퀴놀리닐기, 퀴나졸리닐기, 프테리디닐기, 퀴놀리지닐기, 벤족사지닐기, 카르바졸릴기, 페나지닐기, 페노티아지닐기 및 페난트리디닐기로 이루어진 군에서 선택될 수 있지만, 이에 제한되지 않는다.As used herein, the term “heterocyclic group” refers to a cyclic monovalent substituent having one or more heteroatoms selected from the group consisting of N, O, S, and Se, and the remainder being C atom(s). At this time, the 'heterocyclic group' may be a single ring or a multiple ring. If the heterocyclic group is an aromatic ring, it is called a heteroaryl group, and if the heterocyclic group is an alicyclic ring, it is called a heterocycloalkyl group. The heterocyclic group may be a cyclic group containing a 4-membered, 5-membered, 6-membered, 7-membered or 8-membered ring, wherein the ring contains one or more ring atoms selected from the group consisting of N, O, Se and S, It has C as the remaining ring atom. In one embodiment, the heterocyclic group is pyrrolidinyl group, piperidinyl group, piperazinyl group, morpholino group, thiomorpholino group, homopiperidinyl group, chromanyl group, isochromanyl group, chromenyl group, and pyrrolyl group. , furanyl group, thienyl group, pyrazolyl group, imidazolyl group, furazanyl group, oxazolyl group, isoxazolyl group, thiazolyl group, isothiazolyl group, pyridyl group, pyridazinyl group, pyrimidinyl group, Pyrazinyl group, pyranyl group, indolyl group, isoindolyl group, indazolyl group, purinyl group, indolizinyl group, quinolinyl group, isoquinolinyl group, quinazolinyl group, pteridinyl group, quinolizinyl group, It may be selected from the group consisting of benzoxazinyl group, carbazolyl group, phenazinyl group, phenothiazinyl group, and phenanthridinyl group, but is not limited thereto.
본 명세서에서 사용되는 용어 "알킬옥시기"는 R'O-로 표시되는 1가의 치환기로, 상기 R'는 탄소수 1 내지 20(구체적으로, 탄소수 1~10)의 알킬을 의미하며, 직쇄, 측쇄또는 사이클릭 구조를 포함할 수 있다. 일 실시예로, 상기 알킬옥시는 메톡시, 에톡시, n-프로폭시, 1-프로폭시, t-부톡시, n-부톡시, 펜톡시 등으로 이루어진 군에서 선택될 수 있지만, 이에 제한되지 않는다.The term "alkyloxy group" used herein refers to a monovalent substituent represented by R'O-, where R' refers to alkyl having 1 to 20 carbon atoms (specifically, 1 to 10 carbon atoms), and is a straight chain or branched group. Alternatively, it may include a cyclic structure. In one embodiment, the alkyloxy may be selected from the group consisting of methoxy, ethoxy, n-propoxy, 1-propoxy, t -butoxy, n-butoxy, pentoxy, etc., but is not limited thereto. No.
본 명세서에서 사용되는 용어 "아릴옥시기"는 RO-로 표시되는 1가의 치환기로, 상기 R은 탄소수 5 내지 20(구체적으로, 탄소수 6~10)의 아릴을 의미한다. 일 실시예로, 상기 아릴옥시는 페닐옥시, 나프틸옥시, 디페닐옥시 등으로 이루어진 군에서 선택될 수 있지만, 이에 제한되지 않는다.The term “aryloxy group” used herein refers to a monovalent substituent represented by RO-, where R refers to aryl having 5 to 20 carbon atoms (specifically, 6 to 10 carbon atoms). In one embodiment, the aryloxy may be selected from the group consisting of phenyloxy, naphthyloxy, diphenyloxy, etc., but is not limited thereto.
<폴리아믹산 조성물><Polyamic acid composition>
본 발명의 다른 일 실시예는, 전술한 신규 테트라카복실산 이무수물을 포함하는 폴리아믹산 조성물로서, 이는 폴리아믹산 및/또는 폴리이미드 (공)중합체를 형성하는 전구체 용액에 해당된다. Another embodiment of the present invention is a polyamic acid composition containing the novel tetracarboxylic dianhydride described above, which corresponds to a precursor solution for forming polyamic acid and/or polyimide (co)polymer.
일 구체예를 들면, 상기 폴리아믹산 조성물은 적어도 1종의 디아민; 적어도 1종의 디안하이드라이드;를 포함하며, 상기 테트라카복실산 이무수물 중 적어도 하나는 상기 화학식 1로 표시되는 테트라카복실산 이무수물을 포함한다. 필요에 따라 경화제, 잠재성 경화제, 및/또는 당 분야에 공지된 통상적인 첨가제를 적어도 1종 이상 더 포함할 수 있다.For one specific example, the polyamic acid composition includes at least one type of diamine; At least one type of dianhydride; and at least one of the tetracarboxylic dianhydrides includes tetracarboxylic dianhydride represented by Chemical Formula 1. If necessary, at least one type of curing agent, latent curing agent, and/or conventional additives known in the art may be further included.
이하, 상기 폴리아믹산 조성물의 조성을 구체적으로 살펴보면 다음과 같다. Hereinafter, the composition of the polyamic acid composition will be examined in detail as follows.
테트라카복실산 이무수물Tetracarboxylic dianhydride
본 발명에 따른 폴리아믹산 조성물은 적어도 1종의 테트라카복실산 이무수물 화합물을 포함하되, 상기 화학식 1로 표시되는 테트라카복실산 이무수물을 포함한다. The polyamic acid composition according to the present invention includes at least one tetracarboxylic dianhydride compound, and includes tetracarboxylic dianhydride represented by Formula 1 above.
여기서, 화학식 1의 테트라카복실산 이무수물은 전술한 바와 동일하므로, 별도의 설명은 생략한다. Here, since the tetracarboxylic dianhydride of Formula 1 is the same as described above, separate description is omitted.
본 발명에 따른 폴리아믹산 조성물에서, 상기 화학식 1로 표시되는 테트라카복실산 이무수물 화합물의 사용량은 특별히 제한되지 않으며, 당 분야에 공지된 함량 범위 내에서 적절히 조절할 수 있다. 일례를 들면, 상기 화학식 1의 화합물은 전체 테트라카복실산 이무수물 100 몰%를 기준으로 1 내지 100 몰% 범위로 포함될 수 있으며, 구체적으로 10 내지 100 몰% 범위일 수 있다. In the polyamic acid composition according to the present invention, the amount of the tetracarboxylic dianhydride compound represented by Formula 1 is not particularly limited and can be appropriately adjusted within the content range known in the art. For example, the compound of Formula 1 may be included in the range of 1 to 100 mol%, specifically in the range of 10 to 100 mol%, based on 100 mol% of the total tetracarboxylic dianhydride.
본 발명에 따른 폴리아믹산 조성물은, 전술한 신규 테트라카복실산 이무수물 화합물 이외에, 당 분야에 공지된 통상의 테트라카복실산 이무수물을 더 포함할 수 있다. The polyamic acid composition according to the present invention may further include conventional tetracarboxylic dianhydride known in the art in addition to the novel tetracarboxylic dianhydride compound described above.
이러한 테트라카복실산 이무수물은 분자 내 테트라카복실산 이무수물(tetracarboxylic dianhydride) 구조를 갖는 화합물이라면 특별한 제한 없이 사용 가능하며, 일례로 테트라카복실산 이무수물 구조를 가지고 있는 방향족, 지환족, 또는 지방족 화합물 등이 있다. 구체적으로, 테트라카복실산 이무수물 화합물은 당 분야에 공지된 비불소 방향족, 불소 치환기가 도입된 불소화 방향족, 설폰계, 히드록시계, 에테르계, 지환족 테트라카복실산 이무수물 등을 각각 단독 또는 2종 이상 혼용할 수 있다. Such tetracarboxylic dianhydride can be used without particular limitation as long as it is a compound having a tetracarboxylic dianhydride structure within the molecule. Examples include aromatic, alicyclic, or aliphatic compounds having a tetracarboxylic dianhydride structure. Specifically, tetracarboxylic dianhydride compounds include non-fluorinated aromatic, fluorinated aromatic with fluorine substituent introduced, sulfone-based, hydroxy-based, ether-based, and alicyclic tetracarboxylic dianhydrides known in the art, respectively, individually or in combination of two or more types. Can be used interchangeably.
불소화 방향족 테트라카복실산 이무수물 단량체는 불소 치환기가 도입된 방향족 디안하이드라이드라면, 특별히 한정하지 않는다. 사용 가능한 불소화 방향족 테트라카복실산 이무수물의 일례를 들면, 2,2-비스(3,4-디카르복시페닐)헥사플루오로프로판 디안하이드라이드 (2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydrid, 6-FDA), 4-(트리플루오로메틸)피로멜리틱 디안하이드라이드 (4-(trifluoromethyl)pyromellitic dianhydride, 4-TFPMDA) 등이 있다. 이들을 단독으로 사용하거나 또는 2종 이상 혼합하여 사용될 수 있다. The fluorinated aromatic tetracarboxylic dianhydride monomer is not particularly limited as long as it is an aromatic dianhydride into which a fluorine substituent is introduced. An example of a usable fluorinated aromatic tetracarboxylic dianhydride is 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, 6 -FDA), 4-(trifluoromethyl)pyromellitic dianhydride (4-(trifluoromethyl)pyromellitic dianhydride, 4-TFPMDA), etc. These may be used alone or in combination of two or more types.
또한, 지환족(alicyclic) 테트라카복실산 이무수물은 화합물 내 방향족고리가 아닌 지환족 고리를 가지면서 디안하이드라이드 구조를 갖는 화합물이라면 특별히 제한되지 않는다. 사용 가능한 지환족 테트라카복실산 이무수물의 일례를 들면, 사이클로부탄 테트라카르복실릭 디안하이드라이드(CBDA), 1,2,3,4-사이클로펜탄 테트라카르복실릭 디안하이드라이드(CPDA), 비사이클로[2,2,2]-7-옥텐-2,3,5,6-테트라카르복실산 디안하이드라이드(BCDA), 등이 있으나, 이에 특별히 제한되지 않는다. 전술한 디안하이드라이드를 각각 단독으로 사용하거나 또는 이들을 2종 이상 혼합된 형태로 사용할 수 있다. Additionally, alicyclic tetracarboxylic dianhydride is not particularly limited as long as it is a compound that has a dianhydride structure and has an alicyclic ring rather than an aromatic ring in the compound. Examples of alicyclic tetracarboxylic dianhydrides that can be used include cyclobutane tetracarboxylic dianhydride (CBDA), 1,2,3,4-cyclopentane tetracarboxylic dianhydride (CPDA), and bicyclo[2. ,2,2]-7-octene-2,3,5,6-tetracarboxylic acid dianhydride (BCDA), etc., but is not particularly limited thereto. The above-described dianhydrides can be used individually or in a mixture of two or more types.
또한 비불소화 방향족 테트라카복실산 이무수물 단량체는 불소 치환기가 도입되지 않은 비(非)불소화 방향족 디안하이드라이드라면, 특별히 한정하지 않는다. 사용 가능한 비불소화 방향족 테트라카복실산 이무수물 단량체의 비제한적인 예로는 피로멜리틱 디안하이드라이드 (Pyromellitic Dianhydride, PMDA), 3,3′,4,4′-비페닐테트라카르복실릭 디안하이드라이드 (3,3′,4,4′-Biphenyl tetracarboxylic acid dianhydride, BPDA), 벤조페논 테트라카르복실릭 디안하이드라이드(BTDA), 옥시디프탈릭 디안하이드라이드(ODPA) 등이 있다. 이들을 단독으로 사용하거나, 또는 이들을 2종 이상 혼합하여 사용될 수 있다.Additionally, the non-fluorinated aromatic tetracarboxylic dianhydride monomer is not particularly limited as long as it is a non-fluorinated aromatic dianhydride in which a fluorine substituent is not introduced. Non-limiting examples of non-fluorinated aromatic tetracarboxylic dianhydride monomers that can be used include Pyromellitic Dianhydride (PMDA), 3,3′,4,4′-biphenyltetracarboxylic dianhydride (3) ,3′,4,4′-Biphenyl tetracarboxylic acid dianhydride (BPDA), benzophenone tetracarboxylic dianhydride (BTDA), and oxydiphthalic dianhydride (ODPA). These may be used alone, or two or more types thereof may be mixed.
사용 가능한 산이무수물의 비제한적인 예를 들면, 피로멜리트산 이무수물, 2,3,6,7-나프탈렌테트라카복실산 이무수물, 1,2,5,6-나프탈렌테트라카복실산 이무수물, 1,4,5,8-나프탈렌테트라카복실산 이무수물, 2,3,6,7-안트라센테트라카복실산 이무수물, 1,2,5,6-안트라센테트라카복실산 이무수물, 3,3',4,4'-비페닐테트라카복실산 이무수물, 2,3,3',4-비페닐테트라카복실산 이무수물, 비스(3,4-디카르복시페닐)에테르, 3,3',4,4'-벤조페논테트라카복실산 이무수물, 비스(3,4-디카르복시페닐)술폰, 비스(3,4-디카르복시페닐)메탄, 2,2-비스(3,4-디카르복시페닐)프로판, 1,1,1,3,3,3-헥사플루오로-2,2-비스(3,4-디카르복시페닐)프로판, 비스(3,4-디카르복시페닐)디메틸실란, 비스(3,4-디카르복시페닐)디페닐실란, 2,3,4,5-피리딘테트라카복실산 이무수물, 2,6-비스(3,4-디카르복시페닐)피리딘, 3,3',4,4'-디페닐술폰테트라카복실산 이무수물, 3,4,9,10-페릴렌테트라카복실산 이무수물, 1,3-디페닐- 1,2,3,4-시클로부탄테트라카복실산 이무수물, 옥시디프탈테트라카복실산 이무수물, 1,2,3,4-시클로부탄테트라카복실산 이무수물, 1,2,3,4-시클로펜탄테트라카복실산 이무수물, 1,2,4,5-시클로헥산테트라카복실산 이무수물, 1,2,3,4-테트라메틸-1,2,3,4-시클로부탄테트라카복실산 이무수물, 1,2-디메틸-1,2,3,4-시클로부탄테트라카복실산 이무수물, 1,3-디메틸-1,2,3,4-시클로부탄테트라카복실산 이무수물, 1,2,3,4-시클로헵탄테트라카복실산 이무수물, 2,3,4,5-테트라하이드로푸란테트라카복실산이무수물, 3,4-디카르복시-1-시클로헥실숙신산 이무수물, 2,3,5-트리 카르복시시클로펜틸아세트산 이무수물, 3,4-디카르복시-1,2,3,4-테트라하이드로-1-나프탈렌숙신산 이무수물, 비시클로[3,3,0]옥탄-2,4,6,8-테트라카복실산 이무수물, 비시클로[4,3,0]노난-2,4,7,9-테트라카복실산2무수물, 비시클로[4,4,0]데칸-2,4,7,9-테트라카복실산 이무수물, 비시클로[4,4,0]데칸-2,4,8,10-테트라카복실산 이무수물, 트리시클로[6.3.0.0<2,6>]운데칸-3,5,9,11-테트라카복실산 이무수물, 1,2,3,4-부탄테트라카복실산 이무수물, 4-(2,5-디옥소테트라하이드로푸란-3-일)-1,2,3,4-테트라하이드리나프탈렌-1,2-디카르복실산 이무수물, 비시클로[2,2,2]옥토-7-엔-2,3,5,6-테트라카복실산 이무수물,5-(2,5-디옥소테트라하이드로푸릴)-3-메틸-3-시클로헥산-1,2-디카르복실산이무수물, 테트라시클로[6,2,1,1,0,2,7]도데카-4,5,9,10-테트라카복실산2무수물, 3,5,6-트리카르복시노르보르난-2 : 3, 5 : 6 디카르복실산 이무수물, 1,2,4,5-시클로헥산테트라카복실산 이무수물 등을 들 수 있다.Non-limiting examples of acid dianhydrides that can be used include pyromellitic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1,4, 5,8-naphthalenetetracarboxylic dianhydride, 2,3,6,7-anthracenetetracarboxylic dianhydride, 1,2,5,6-anthracenetetracarboxylic dianhydride, 3,3',4,4'-biphenyl Tetracarboxylic acid dianhydride, 2,3,3',4-biphenyltetracarboxylic dianhydride, bis(3,4-dicarboxyphenyl)ether, 3,3',4,4'-benzophenone tetracarboxylic dianhydride, Bis(3,4-dicarboxyphenyl)sulfone, bis(3,4-dicarboxyphenyl)methane, 2,2-bis(3,4-dicarboxyphenyl)propane, 1,1,1,3,3, 3-Hexafluoro-2,2-bis(3,4-dicarboxyphenyl)propane, bis(3,4-dicarboxyphenyl)dimethylsilane, bis(3,4-dicarboxyphenyl)diphenylsilane, 2 ,3,4,5-Pyridine tetracarboxylic dianhydride, 2,6-bis(3,4-dicarboxyphenyl)pyridine, 3,3',4,4'-diphenylsulfone tetracarboxylic dianhydride, 3,4 ,9,10-Perylene tetracarboxylic dianhydride, 1,3-diphenyl- 1,2,3,4-cyclobutane tetracarboxylic dianhydride, oxydiphthalate tetracarboxylic dianhydride, 1,2,3,4- Cyclobutane tetracarboxylic dianhydride, 1,2,3,4-cyclopentane tetracarboxylic dianhydride, 1,2,4,5-cyclohexane tetracarboxylic dianhydride, 1,2,3,4-tetramethyl-1, 2,3,4-Cyclobutanetetracarboxylic acid dianhydride, 1,2-dimethyl-1,2,3,4-cyclobutanetetracarboxylic acid dianhydride, 1,3-dimethyl-1,2,3,4-cyclobutane Tetracarboxylic dianhydride, 1,2,3,4-cycloheptanetetracarboxylic dianhydride, 2,3,4,5-tetrahydrofuran tetracarboxylic dianhydride, 3,4-dicarboxy-1-cyclohexylsuccinic dianhydride , 2,3,5-tricarboxycyclopentylacetic dianhydride, 3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthalenesuccinic acid dianhydride, bicyclo[3,3,0]octane -2,4,6,8-tetracarboxylic dianhydride, bicyclo[4,3,0]nonane-2,4,7,9-tetracarboxylic dianhydride, bicyclo[4,4,0]decane-2 ,4,7,9-Tetracarboxylic dianhydride, bicyclo[4,4,0]decane-2,4,8,10-tetracarboxylic dianhydride, tricyclo[6.3.0.0<2,6>]undecane -3,5,9,11-tetracarboxylic dianhydride, 1,2,3,4-butanetetracarboxylic dianhydride, 4-(2,5-dioxotetrahydrofuran-3-yl)-1,2, 3,4-Tetrahydrinaphthalene-1,2-dicarboxylic dianhydride, bicyclo[2,2,2]octo-7-ene-2,3,5,6-tetracarboxylic acid dianhydride, 5- (2,5-dioxotetrahydrofuryl)-3-methyl-3-cyclohexane-1,2-dicarboxylic dianhydride, tetracyclo[6,2,1,1,0,2,7]dodeca -4,5,9,10-tetracarboxylic dianhydride, 3,5,6-tricarboxynorbornane-2:3, 5:6 dicarboxylic dianhydride, 1,2,4,5-cyclohexane Tetracarboxylic dianhydride, etc. can be mentioned.
디아민diamine
본 발명에 따른 폴리아믹산 조성물은 분자 내 디아민(diamine) 구조를 갖는 당 분야에 공지된 통상의 디아민 화합물을 제한 없이 사용할 수 있다. The polyamic acid composition according to the present invention can use, without limitation, conventional diamine compounds known in the art having a diamine structure in the molecule.
상기 디아민은 테트라카르복실 이무수물과 반응하는 통상의 디아민 화합물이라면 특별히 한정되지 않으며, 구체적으로 비불소 방향족 디아민, 불소 치환기가 도입된 불소화 방향족 디아민, 설폰계 디아민, 히드록시계 디아민, 에테르계 디아민, 지환족 디아민 등을 각각 단독 또는 2종 이상 혼용할 수 있다. The diamine is not particularly limited as long as it is a typical diamine compound that reacts with tetracarboxylic dianhydride, and specifically includes non-fluorinated aromatic diamine, fluorinated aromatic diamine with a fluorine substituent introduced, sulfone diamine, hydroxy diamine, ether diamine, Alicyclic diamines, etc. can be used individually or in combination of two or more types.
사용 가능한 디아민의 비제한적인 예를 들면, p-페닐렌디아민, 2,3,5,6-테트라메틸-p-페닐렌디아민, 2,5-디메틸-p-페닐렌디아민, m-페닐렌디아민, 2,4-디메틸-m-페닐렌디아민, 2,5-디아미노톨루엔, 2,6-디아미노톨루엔, 2,5-디아미노페놀, 2,4-디아미노페놀, 3,5-디아미노페놀, 3,5-디아미노벤질알코올, 2,4-디아미노벤질알코올, 4,6-디아미노레조르시놀, 4,4'-디아미노비페닐, 3,3'-디메틸-4,4'-디아미노비페닐, 3,3'-디메톡시-4,4'-디아미노비페닐, 3,3'-디하이드록시-4,4'-디아미노비페닐, 3,3'-디플루오로-4,4'-비페닐, 3,3'-트리플루오로메틸-4,4'-디아미노비페닐, 3,4'-디아미노비페닐, 3,3'-디아미노비페닐, 2,2'-디아미노비페닐, 2,3'-디아미노비페닐, 4,4'-디아미노디페닐메탄, 3,3'-디아미노디페닐메탄, 3,4'-디아미노디페닐메탄, 2,2'-디아미노디페닐메탄, 2,3'-디아미노디페닐메탄, 4,4'-디아미노디페닐에테르, 3,3'-디아미노디페닐에테르, 3,4'-디아미노디페닐에테르, 2,2'-디아미노디페닐에테르, 2,3'-디아미노디페닐에테르, 4,4'-술포닐디아닐린, 3,3'-술포닐디아닐린, 비스(4-아미노페닐)실란, 비스(3-아미노페닐)실란, 디메틸-비스(4-아미노페닐)실란, 디메틸-비스(3-아미노페닐)실란, 4,4'-티오디아닐린, 3,3'-티오디아닐린, 4,4'-디아미노디페닐아민, 3,3'-디아미노디페닐아민, 3,4'-디아미노디페닐아민, 2,2'-디아미노디페닐아민, 2,3'-디아미노디페닐아민, N-메틸(4,4'-디아미노디페닐)아민, N-메틸(3,3'-디아미노디페닐)아민, N-메틸(3,4'-디아미노디페닐)아민, N-메틸(2,2'-디아미노디페닐)아민, N-메틸(2,3'-디아미노디페닐)아민, 4,4'-디아미노벤조페논, 3,3'-디아미노벤조페논, 3,4'-디아미노벤조페논, 1,4-디아미노나프탈렌, 2,2'-디아미노벤조페논, 2,3'-디아미노벤조페논, 1,5-디아미노나프탈렌, 1,6-디아미노나프탈렌, 1,7-디아미노나프탈렌, 1,8-디아미노나프탈렌, 2,5-디아미노나프탈렌, 2,6-디아미노나프탈렌, 2,7-디아미노나프탈렌, 2,8-디아미노나프탈렌, 1,2-비스(4-아미노페닐)에탄, 1,2-비스(3-아미노페닐)에탄, 1,3-비스(4-아미노페닐)프로판, 1,3-비스(3-아미노페닐)프로판, 1,4-비스(4-아미노페닐)부탄, 1,4-비스(3-아미노페닐)부탄, 비스(3,5-디에틸-4-아미노페닐)메탄, 1,4-비스(4-아미노페녹시)벤젠, 1,3-비스(4-아미노페녹시)벤젠, 1,4-비스(4-아미노페닐)벤젠, 1,3-비스(4-아미노페닐)벤젠, 1,4-비스(4-아미노벤질)벤젠, 1,3-비스(4-아미노페녹시)벤젠, 4,4'-[1,4-페닐렌비스(메틸렌)]디아닐린, 4,4'-[1,3-페닐렌비스(메틸렌)]디아닐린, 3,4'-[1,4-페닐렌비스(메틸렌)]디아닐린, 3,4'-[1,3-페닐렌비스(메틸렌)]디아닐린, 3,3'-[1,4-페닐렌비스(메틸렌)]디아닐린, 3,3'-[1,3-페닐렌비스(메틸렌)]디아닐린, 1,4-페닐렌비스[(4-아미노페닐)메타논], 1,4-페닐렌비스[(3-아미노페닐) 메타논], 1,3-페닐렌비스[(4-아미노페닐)메타논], 1,3-페닐렌비스[(3-아미노페닐)메타논], 1,4-페닐렌비스(4-아미노벤조에이트), 1,4-페닐렌비스(3-아미노벤조에이트), 1,3-페닐렌비스(4-아미노벤조에이트), 1,3-페닐렌비스(3-아미노벤조에이트), 비스(4-아미노페닐)테레프탈레이트, 비스(3-아미노페닐) 테레프탈레이트, 비스(4-아미노페닐)이소프탈레이트, 비스(3-아미노페닐)이소프탈레이트, N,N'-(1,4-페닐렌)비스(4-아미노벤즈아미드), N,N'-(1,3-페닐렌)비스(4-아미노벤즈아미드), N,N'-(1,4-페닐렌)비스(3-아미노벤즈아미드), N,N'-(1,3-페닐렌)비스(3-아미노벤즈아미드), N,N'-비스(4-아미노페닐)테레프탈아미드, N,N'-비스(3-아미노페닐)테레프탈아미드, N,N'-비스(4-아미노페닐)이소프탈아미드, N,N'-비스(3-아미노페닐)이소프탈아미드, 9,10-비스(4-아미노페닐)안트라센, 4,4'-비스(4-아미노페녹시)디페닐술폰, 2,2'-비스[4-(4-아미노페녹시)페닐]프로판, 2,2'-비스[4-(4-아미노페녹시)페닐]헥사플루오로프로판, 2,2'-비스(4-아미노페닐)헥사플루오로프로판, 2,2'-비스(3-아미노페닐)헥사플루오로프로판, 2,2'-비스(3-아미노-4-메틸페닐)헥사플루오로프로판, 2,2'-비스(4-아미노페닐)프로판, 2,2'-비스(3-아미노페닐)프로판, 2,2'-비스(3-아미노-4-메틸페닐)프로판, 1,3-비스(4-아미노페녹시)프로판, 1,3-비스(3-아미노페녹시)프로판, 1,4-비스(4-아미노페녹시)부탄, 1,4-비스(3-아미노페녹시)부탄, 1,5-비스(4-아미노페녹시)펜탄, 1,5-비스(3-아미노페녹시)펜탄, 1,6-비스(4-아미노페녹시)헥산, 1,6-비스(3-아미노페녹시)헥산, 1,7-비스(4-아미노페녹시)헵탄, 1,7-(3-아미노페녹시)헵탄, 1,8-비스(4-아미노페녹시)옥탄, 1,8-비스(3-아미노페녹시)옥탄, 1,9-비스(4-아미노페녹시)노난, 1,9-비스(3-아미노페녹시)노난, 1,10-(4-아미노페녹시)데칸, 1,10-(3-아미노페녹시)데칸, 1,11-(4-아미노페녹시)운데칸, 1,11-(3-아미노페녹시)운데칸, 1,12-(4-아미노페녹시)도데칸, 1,12-(3-아미노페녹시)도데칸. 비스(4-아미노시클로헥실)메탄, 비스(4-아미노-3-메틸시클로헥실)메탄, 1,3-디아미노프로판, 1,4-디아미노부탄, 1,5-디아미노펜탄, 1,6-디아미노헥산, 1,7-디아미노헵탄, 1,8-디아미노옥탄, 1,9-디아미노노난, 1,10-디아미노데칸, 1,11-디아미노운데칸, 1,12-디아미노도데칸, 또는 이들의 혼합물 등이 있다. 또, 디아민 측사슬로서 알킬기, 불소 함유 알킬기, 방향 고리, 지방족 고리, 복소 고리, 및 이들로부터 이루어지는 고리형 치환기를 갖는 디아민 화합물을 사용할 수 있다.Non-limiting examples of diamines that can be used include p-phenylenediamine, 2,3,5,6-tetramethyl-p-phenylenediamine, 2,5-dimethyl-p-phenylenediamine, m-phenylene. Diamine, 2,4-dimethyl-m-phenylenediamine, 2,5-diaminotoluene, 2,6-diaminotoluene, 2,5-diaminophenol, 2,4-diaminophenol, 3,5- Diaminophenol, 3,5-diaminobenzyl alcohol, 2,4-diaminobenzyl alcohol, 4,6-diaminoresorcinol, 4,4'-diaminobiphenyl, 3,3'-dimethyl-4 ,4'-diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl, 3,3'-dihydroxy-4,4'-diaminobiphenyl, 3,3' -Difluoro-4,4'-biphenyl, 3,3'-trifluoromethyl-4,4'-diaminobiphenyl, 3,4'-diaminobiphenyl, 3,3'-diamino Biphenyl, 2,2'-diaminobiphenyl, 2,3'-diaminobiphenyl, 4,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 3,4'- Diaminodiphenylmethane, 2,2'-diaminodiphenylmethane, 2,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 2,2'-diaminodiphenyl ether, 2,3'-diaminodiphenyl ether, 4,4'-sulfonyldianiline, 3,3'-sulfonyldianiline , bis(4-aminophenyl)silane, bis(3-aminophenyl)silane, dimethyl-bis(4-aminophenyl)silane, dimethyl-bis(3-aminophenyl)silane, 4,4'-thiodianiline, 3,3'-thiodianiline, 4,4'-diaminodiphenylamine, 3,3'-diaminodiphenylamine, 3,4'-diaminodiphenylamine, 2,2'-diaminodi Phenylamine, 2,3'-diaminodiphenylamine, N-methyl(4,4'-diaminodiphenyl)amine, N-methyl(3,3'-diaminodiphenyl)amine, N-methyl( 3,4'-diaminodiphenyl)amine, N-methyl(2,2'-diaminodiphenyl)amine, N-methyl(2,3'-diaminodiphenyl)amine, 4,4'-dia Minobenzophenone, 3,3'-diaminobenzophenone, 3,4'-diaminobenzophenone, 1,4-diaminonaphthalene, 2,2'-diaminobenzophenone, 2,3'-diaminobenzo Phenone, 1,5-diaminonaphthalene, 1,6-diaminonaphthalene, 1,7-diaminonaphthalene, 1,8-diaminonaphthalene, 2,5-diaminonaphthalene, 2,6-diaminonaphthalene, 2,7-diaminonaphthalene, 2,8-diaminonaphthalene, 1,2-bis(4-aminophenyl)ethane, 1,2-bis(3-aminophenyl)ethane, 1,3-bis(4- Aminophenyl)propane, 1,3-bis(3-aminophenyl)propane, 1,4-bis(4-aminophenyl)butane, 1,4-bis(3-aminophenyl)butane, bis(3,5- Diethyl-4-aminophenyl)methane, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,4-bis(4-aminophenyl)benzene , 1,3-bis(4-aminophenyl)benzene, 1,4-bis(4-aminobenzyl)benzene, 1,3-bis(4-aminophenoxy)benzene, 4,4'-[1,4 -phenylenebis(methylene)]dianiline, 4,4'-[1,3-phenylenebis(methylene)]dianiline, 3,4'-[1,4-phenylenebis(methylene)]dianiline , 3,4'-[1,3-phenylenebis(methylene)]dianiline, 3,3'-[1,4-phenylenebis(methylene)]dianiline, 3,3'-[1,3 -phenylenebis(methylene)]dianiline, 1,4-phenylenebis[(4-aminophenyl)methanone], 1,4-phenylenebis[(3-aminophenyl)methanone], 1,3 -Phenylenebis[(4-aminophenyl)methanone], 1,3-phenylenebis[(3-aminophenyl)methanone], 1,4-phenylenebis(4-aminobenzoate), 1, 4-phenylenebis(3-aminobenzoate), 1,3-phenylenebis(4-aminobenzoate), 1,3-phenylenebis(3-aminobenzoate), bis(4-aminophenyl) Terephthalate, bis(3-aminophenyl) terephthalate, bis(4-aminophenyl)isophthalate, bis(3-aminophenyl)isophthalate, N,N'-(1,4-phenylene)bis(4- Aminobenzamide), N,N'-(1,3-phenylene)bis(4-aminobenzamide), N,N'-(1,4-phenylene)bis(3-aminobenzamide), N ,N'-(1,3-phenylene)bis(3-aminobenzamide), N,N'-bis(4-aminophenyl)terephthalamide, N,N'-bis(3-aminophenyl)terephthalamide , N,N'-bis(4-aminophenyl)isophthalamide, N,N'-bis(3-aminophenyl)isophthalamide, 9,10-bis(4-aminophenyl)anthracene, 4,4' -bis(4-aminophenoxy)diphenylsulfone, 2,2'-bis[4-(4-aminophenoxy)phenyl]propane, 2,2'-bis[4-(4-aminophenoxy)phenyl ]Hexafluoropropane, 2,2'-bis(4-aminophenyl)hexafluoropropane, 2,2'-bis(3-aminophenyl)hexafluoropropane, 2,2'-bis(3-amino -4-methylphenyl)hexafluoropropane, 2,2'-bis(4-aminophenyl)propane, 2,2'-bis(3-aminophenyl)propane, 2,2'-bis(3-amino-4) -Methylphenyl)propane, 1,3-bis(4-aminophenoxy)propane, 1,3-bis(3-aminophenoxy)propane, 1,4-bis(4-aminophenoxy)butane, 1,4 -Bis(3-aminophenoxy)butane, 1,5-bis(4-aminophenoxy)pentane, 1,5-bis(3-aminophenoxy)pentane, 1,6-bis(4-aminophenoxy) )hexane, 1,6-bis(3-aminophenoxy)hexane, 1,7-bis(4-aminophenoxy)heptane, 1,7-(3-aminophenoxy)heptane, 1,8-bis( 4-aminophenoxy)octane, 1,8-bis(3-aminophenoxy)octane, 1,9-bis(4-aminophenoxy)nonane, 1,9-bis(3-aminophenoxy)nonane, 1,10-(4-aminophenoxy)decane, 1,10-(3-aminophenoxy)decane, 1,11-(4-aminophenoxy)undecane, 1,11-(3-aminophenoxy) ) undecane, 1,12-(4-aminophenoxy)dodecane, 1,12-(3-aminophenoxy)dodecane. Bis(4-aminocyclohexyl)methane, bis(4-amino-3-methylcyclohexyl)methane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1, 6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminoctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, 1, 12-diaminododecane, or mixtures thereof. Moreover, as the diamine side chain, a diamine compound having an alkyl group, a fluorine-containing alkyl group, an aromatic ring, an aliphatic ring, a heterocycle, and a cyclic substituent formed from these can be used.
상기 디아민의 사용량은 특별히 제한되지 않으며, 당 분야에 공지된 함량 범위 내에서 적절히 조절할 수 있다. 일례를 들면, 적어도 1종의 디아민은 전체 디아민 100 몰%를 기준으로 1 내지 100 몰% 범위로 포함될 수 있으며, 구체적으로 10 내지 100 몰% 범위일 수 있다. The amount of diamine used is not particularly limited and can be appropriately adjusted within the content range known in the art. For example, at least one type of diamine may be included in the range of 1 to 100 mol%, specifically 10 to 100 mol%, based on 100 mol% of the total diamine.
본 발명의 폴리아믹산 조성물에 있어서, 상기 디아민 성분(a)의 몰수와 상기 테트라카복실산 이무수물 성분(b)의 몰수의 비(a/b)는 0.7 내지 1.3 일 수 있으며, 바람직하게는 0.8 내지 1.2이며, 더욱 바람직하게는 0.9 내지 1.1 범위일 수 있다. 그러나 이에 특별히 제한되지 않는다.In the polyamic acid composition of the present invention, the ratio (a/b) of the number of moles of the diamine component (a) and the number of moles of the tetracarboxylic dianhydride component (b) may be 0.7 to 1.3, preferably 0.8 to 1.2. and, more preferably, may be in the range of 0.9 to 1.1. However, it is not particularly limited thereto.
용매menstruum
본 발명에 따른 폴리아믹산 조성물은, 전술한 디아민과 테트라카복실산 이무수물 단량체들의 용액 중합반응을 위한 용매로서, 당 분야에 공지된 유기용매를 제한 없이 사용할 수 있다. The polyamic acid composition according to the present invention is a solvent for the solution polymerization reaction of the above-described diamine and tetracarboxylic dianhydride monomers, and organic solvents known in the art can be used without limitation.
상기 유기용매는 중합체가 용해 가능한 것이라면 특별히 제한되지 않으며, 일례로 N,N-디메틸포름아미드, N,N-디메틸아세트아미드, N-메틸-2-피롤리돈, N-메틸 카프로락탐, 디메틸술폭사이드, 테트라메틸우레아, 피리딘, 디메틸술폰, 헥사메틸술폭사이드, γ-부티로락톤, 이소프로필알코올, 메톡시메틸펜탄올, 디펜텐, 에틸아밀케톤, 메틸노닐케톤, 메틸에틸케톤, 메틸이소아밀케톤, 메틸이소프로필케톤, 메틸셀로솔브, 에틸셀로솔브, 메틸셀로솔브아세테이트, 에틸셀로솔브아세테이트, 부틸카르비톨, 에틸카르비톨, 에틸렌글리콜, 에틸렌글리콜모노아세테이트, 에틸렌글리콜모노이소프로필에테르, 에틸렌글리콜모노부틸에테르, 프로필렌글리콜, 프로필렌글리콜모노아세테이트, 프로필렌글리콜모노메틸에테르, 프로필렌글리콜-tert-부틸에테르, 디프로필렌글리콜모노메틸에테르, 디에틸렌글리콜, 에틸렌글리콜모노아세테이트, 디에틸렌글리콜디메틸에테르, 디프로필렌글리콜모노아세테이트모노메틸에테르, 디프로필렌글리콜모노메틸에테르, 디프로필렌글리콜모노에틸에테르, 디프로필렌글리콜모노아세테이트모노에틸에테르, 디프로필렌글리콜모노프로필에테르, 디프로필렌글리콜모노아세테이트 모노프로필에테르, 3-메틸-3-메톡시부틸아세테이트, 트리프로필렌글리콜메틸에테르, 3-메틸-3-메톡시부탄올, 디이소프로필에테르, 에틸이소부틸에테르, 디이소부틸렌, 아밀아세테이트, 부틸부틸레이트, 부틸에테르, 디이소부틸케톤, 메틸시클로헥센, 프로필에테르, 디헥실에테르, 디옥산, n-헥산, n-펜탄, n-옥탄, 디에틸에테르, 시클로헥사논, 에틸렌카보네이트, 프로필렌카보네이트, 락트산메틸, 락트산에틸, 아세트산메틸, 아세트산에틸, 아세트산n-부틸, 아세트산프로필렌글리콜모노에틸에테르, 피루브산메틸, 피루브산에틸, 3-메톡시프로피온산메틸, 3-에톡시프로피온산메틸에틸, 3-메톡시프로피온산에틸, 3-에톡시프로피온산, 3-메톡시프로피온산, 3-메톡시프로피온산프로필, 3-메톡시프로피온산부틸, 디글라임, 4-하이드록시-4-메틸-2-펜타논 등을 들 수 있다. 이들은 단독으로 사용해도 되고, 혼합하여 사용해도 된다.The organic solvent is not particularly limited as long as the polymer is soluble, and examples include N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, N-methyl caprolactam, and dimethylsulfoxide. Side, tetramethyl urea, pyridine, dimethyl sulfone, hexamethyl sulfoxide, γ-butyrolactone, isopropyl alcohol, methoxymethyl pentanol, dipentene, ethyl amyl ketone, methyl nonyl ketone, methyl ethyl ketone, methyl isoa Milketone, methyl isopropyl ketone, methyl cellosolve, ethyl cellosolve, methyl cellosolve acetate, ethyl cellosolve acetate, butyl carbitol, ethyl carbitol, ethylene glycol, ethylene glycol monoacetate, ethylene glycol monoiso. Propyl ether, ethylene glycol monobutyl ether, propylene glycol, propylene glycol monoacetate, propylene glycol monomethyl ether, propylene glycol-tert-butyl ether, dipropylene glycol monomethyl ether, diethylene glycol, ethylene glycol monoacetate, diethylene glycol Dimethyl ether, dipropylene glycol monoacetate monomethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monoacetate monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monoacetate monopropyl ether , 3-methyl-3-methoxybutyl acetate, tripropylene glycol methyl ether, 3-methyl-3-methoxybutanol, diisopropyl ether, ethyl isobutyl ether, diisobutylene, amyl acetate, butyl butylate, Butyl ether, diisobutyl ketone, methylcyclohexene, propyl ether, dihexyl ether, dioxane, n-hexane, n-pentane, n-octane, diethyl ether, cyclohexanone, ethylene carbonate, propylene carbonate, methyl lactate. , ethyl lactate, methyl acetate, ethyl acetate, n-butyl acetate, propylene glycol monoethyl ether acetate, methyl pyruvate, ethyl pyruvate, methyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-methoxypropionate, Examples include 3-ethoxypropionic acid, 3-methoxypropionic acid, 3-methoxypropyl propionate, butyl 3-methoxypropionate, diglyme, and 4-hydroxy-4-methyl-2-pentanone. These may be used individually or mixed.
상기 용매의 함량은 조성물의 총량이 100 중량부가 되도록 하는 잔량이라면 특별히 한정되지 않는다. 적절한 폴리아믹산 용액의 분자량과 점도를 얻기 위하여, 전체 폴리아믹산 제조용 조성물 중량을 기준으로 하여 50 내지 95 중량부, 구체적으로 70 내지 90 중량부일 수 있다.The content of the solvent is not particularly limited as long as the remaining amount makes the total amount of the composition 100 parts by weight. In order to obtain an appropriate molecular weight and viscosity of the polyamic acid solution, it may be 50 to 95 parts by weight, specifically 70 to 90 parts by weight, based on the total weight of the composition for producing polyamic acid.
첨가제additive
전술한 성분 이외에, 본 발명의 폴리아믹산 조성물은 발명의 효과를 저해하지 않는 범위 내에서, 당 분야에 공지된 통상의 경화제, 잠재성 경화제, 및/또는 기타 첨가제를 적어도 1종 이상 포함할 수 있다. In addition to the above-mentioned components, the polyamic acid composition of the present invention may contain at least one type of conventional curing agent, latent curing agent, and/or other additives known in the art, within the range that does not impair the effect of the invention. .
경화제와 잠재성 경화제는 특별히 제한되지 않으며, 당 분야에 공지된 성분을 제한 없이 사용할 수 있다. 일례로, 에폭시 경화제, 아민 부가물 계열, 디시안디아미드, 요소계 [예, 3-(3,4-디클로로페닐)-1,1-디메틸요소], 이미다졸 계열 경화제, 또는 이들의 1종 이상의 혼합물 등을 사용할 수 있다. The curing agent and latent curing agent are not particularly limited, and components known in the art can be used without limitation. For example, epoxy curing agents, amine adduct series, dicyandiamide, urea series [e.g., 3-(3,4-dichlorophenyl)-1,1-dimethylurea], imidazole series curing agents, or one or more types thereof. Mixtures, etc. can be used.
또한 사용 가능한 첨가제의 일례를 들면, 가소제, 산화방지제, 난연화제, 분산제, 점도 조절제, 레벨링제, 무기 충전제, 경화 촉진제 등일 수 있다. 이들을 단독으로 사용하거나 또는 2종 이상 혼용할 수 있다. 상기 첨가제의 함량은 특별히 제한되지 않으며, 당 분야에 공지된 사용량 범위 내에서 적절히 조절할 수 있다. 일례로, 적어도 1종의 첨가제는 당해 폴리아믹산 조성물의 전체 중량을 기준으로 0.01 내지 10 중량부, 구체적으로 0.1 내지 5 중량부로 포함될 수 있다. Additionally, examples of additives that can be used include plasticizers, antioxidants, flame retardants, dispersants, viscosity modifiers, leveling agents, inorganic fillers, and curing accelerators. These can be used alone or two or more types can be used together. The content of the additive is not particularly limited and can be appropriately adjusted within the usage range known in the art. For example, at least one type of additive may be included in an amount of 0.01 to 10 parts by weight, specifically 0.1 to 5 parts by weight, based on the total weight of the polyamic acid composition.
본 발명에 따른 폴리아믹산 조성물은, 당 분야에 공지된 통상의 방법에 따라 전술한 화학식 1의 테트라카복실산 이무수물을 함유하는 적어도 1종의 테트라카복실산 이무수물, 적어도 1종의 디아민, 필요에 따라 경화제, 잠재성 경화제 및/또는 첨가제를 용매에 투입한 후 반응시켜 제조될 수 있다. The polyamic acid composition according to the present invention is prepared by adding at least one tetracarboxylic dianhydride containing the tetracarboxylic acid dianhydride of the above-described formula (1), at least one diamine, and, if necessary, a curing agent according to a common method known in the art. , can be prepared by adding a latent hardener and/or additive to a solvent and then reacting.
테트라카복실산 이무수물과 디아민을 유기 용매 중에서 반응시킬 때, 디아민 성분을 유기 용매에 분산 혹은 용해시킨 용액을 교반시키고, 테트라카복실산 이무수물을 그대로, 또는 유기 용매에 분산 혹은 용해시켜 첨가하는 방법, 이와 반대로 테트라카복실산 이무수물을 유기 용매에 분산 혹은 용해시킨 용액에 디아민 성분을 첨가하는 방법, 테트라카복실산 이무수물과 디아민 성분을 교대로 첨가하는 방법 등을 사용할 수 있으며, 이들 중 어느 방법을 사용해도 된다. 또한, 테트라카복실산 이무수물 또는 디아민이 복수 종의 화합물로 이루어지는 경우에는, 미리 혼합한 상태에서 반응시켜도 되고, 개별적으로 순차 반응시켜도 되고, 또한 개별적으로 반응시킨 저분자량체를 혼합 반응시킬 수도 있다.When reacting tetracarboxylic dianhydride and diamine in an organic solvent, a solution in which the diamine component is dispersed or dissolved in the organic solvent is stirred, and tetracarboxylic dianhydride is added as is or as dispersed or dissolved in the organic solvent. Conversely, A method of adding a diamine component to a solution in which tetracarboxylic dianhydride is dispersed or dissolved in an organic solvent, a method of adding tetracarboxylic dianhydride and diamine components alternately, etc. can be used. Any of these methods may be used. In addition, when tetracarboxylic dianhydride or diamine consists of multiple types of compounds, the reaction may be performed in a pre-mixed state, the reaction may be performed individually sequentially, or the individually reacted low molecular weight substances may be mixed and reacted.
전술한 바와 같이 구성되는 폴리아믹산 조성물은 화학식 1로 표시되는 테트라카복실산 이무수물을 포함하기만 하면, 그 조성이나 점도 등에 특별히 제한되지 않는다. 일례로, 상기 폴리아믹산 조성물은 약 1,000 내지 400,000 cps, 구체적으로 약 5,000 내지 100,000 cps 범위의 점도(25℃ 기준)를 가질 수 있다. 폴리아믹산 용액의 점도가 전술한 범위에 해당되는 경우, 폴리아믹산 용액 코팅 시 두께 조절이 용이하며, 코팅 표면이 균일하게 발휘될 수 있다.The polyamic acid composition constituted as described above is not particularly limited in composition or viscosity, etc., as long as it contains tetracarboxylic dianhydride represented by Chemical Formula 1. For example, the polyamic acid composition may have a viscosity (based on 25°C) ranging from about 1,000 to 400,000 cps, specifically about 5,000 to 100,000 cps. When the viscosity of the polyamic acid solution falls within the above-mentioned range, it is easy to control the thickness when coating the polyamic acid solution, and the coating surface can be uniform.
<폴리아믹산><Polyamic acid>
본 발명의 또 다른 일 실시예는, 전술한 폴리아믹산 조성물을 이용하여 형성된 폴리아믹산으로서, 폴리이미드 중합체를 제조하기 위한 폴리이미드 전구체[poly(amic acid), PAA] 고분자이다. Another embodiment of the present invention is a polyamic acid formed using the above-described polyamic acid composition, and is a polyimide precursor (poly(amic acid), PAA) polymer for producing a polyimide polymer.
일 구체예를 들면, 상기 폴리아믹산은 하기 화학식 7 내지 화학식 9 중 어느 하나로 표시되는 반복단위를 포함한다. For one specific example, the polyamic acid includes a repeating unit represented by any one of Formulas 7 to 9 below.
[화학식 7][Formula 7]
[화학식 8][Formula 8]
[화학식 9][Formula 9]
상기 식에서, In the above equation,
상기 화학식 7의 A; 상기 화학식 8의 A1 및 A2 중 적어도 하나; 상기 화학식 9의 A3 내지 A5 중 적어도 하나;는 화학식 1의 화합물에서 유래된 기이며,A of Formula 7; At least one of A 1 and A 2 of Formula 8; At least one of A 3 to A 5 of Formula 9 is a group derived from the compound of Formula 1,
상기 B는 디아민에서 유래된 기이며,The B is a group derived from diamine,
상기 화학식 8에서 x 및 y는 x+y=1을 만족하는 유리수이고,In Formula 8, x and y are rational numbers that satisfy x+y=1,
상기 화학식 9에서 x, y, 및 z는 x + y + z = 1, 0 < y + z ≤ 0.7, 및 0.3 ≤ x + y < 1을 만족하는 유리수이다. In Formula 9, x, y, and z are rational numbers that satisfy x + y + z = 1, 0 < y + z ≤ 0.7, and 0.3 ≤ x + y < 1.
여기서, 상기 화학식 7 내지 9로 표시되는 각 반복단위의 중합도는 특별히 제한되지 않으며, 당 분야에 공지된 범위 내에서 적절히 조절할 수 있다. 일례로, 1 내지 10,000 사이의 정수일 수 있다. Here, the degree of polymerization of each repeating unit represented by Formulas 7 to 9 is not particularly limited and can be appropriately adjusted within a range known in the art. For example, it may be an integer between 1 and 10,000.
상기 화학식 8 및 9에서, A1 내지 A5는 전술한 화학식 1의 테트라카르복실산 이무수물과 상이한 또 다른 테트라카르복실산 이무수물에서 유래된 기를 포함할 수 있다. 이러한 테트라카르복실산 이무수물은 전술한 폴리아믹산 조성물에 기재된 추가 테트라카르복실산 이무수물 성분과 동일하므로, 별도의 내용은 생략한다. 또한 상기 화학식 7 내지 9에서 B는 디아민에서 유래된 기이며, 이러한 디아민의 성분은 전술한 폴리아믹산 조성물에 기재된 구체 디아민 성분과 동일하므로, 별도의 내용은 생략한다. 그리고 화학식 9에서, A1 내지 A5는 서로 동일하거나 상이할 수 있으며, 구체적으로 A4 또는 A5는 A3와 동일하거나 또는 상이할 수 있다.In Formulas 8 and 9, A 1 to A 5 may include a group derived from another tetracarboxylic dianhydride that is different from the tetracarboxylic dianhydride of Formula 1 described above. Since this tetracarboxylic dianhydride is the same as the additional tetracarboxylic dianhydride component described in the polyamic acid composition described above, further details are omitted. In addition, in Formulas 7 to 9, B is a group derived from diamine, and since the diamine component is the same as the specific diamine component described in the polyamic acid composition described above, further details are omitted. And in Formula 9, A 1 to A 5 may be the same as or different from each other, and specifically, A 4 or A 5 may be the same as or different from A 3 .
<폴리이미드 중합체><Polyimide polymer>
아울러, 본 발명의 다른 일 실시예는, 전술한 화학식 1로 표시되는 테트라카복실산 이무수물을 함유하는 폴리아믹산 조성물을 반응시켜 얻어지는 폴리아믹산, 또는 그 폴리아믹산을 탈수 폐환시켜 얻어지는 중합체 또는 공중합체이다. In addition, another embodiment of the present invention is a polyamic acid obtained by reacting a polyamic acid composition containing tetracarboxylic dianhydride represented by the above-described formula (1), or a polymer or copolymer obtained by dehydrating and ring-closing the polyamic acid.
상기 폴리이미드 중합체는 특별히 제한되지 않으며, 당 분야에 공지된 통상의 랜덤 공중합체(random copolymer)나 블록 공중합체(block copolymer) 형태일 수 있다. 일 구체예를 들면, 상기 중합체는 하기 화학식 10 내지 화학식 12 중 어느 하나로 표시되는 폴리이미드계 구조 단위(반복 단위)를 포함한다.The polyimide polymer is not particularly limited and may be in the form of a common random copolymer or block copolymer known in the art. For one specific example, the polymer includes a polyimide-based structural unit (repeating unit) represented by any one of the following formulas 10 to 12.
[화학식 10][Formula 10]
[화학식 11][Formula 11]
[화학식 12][Formula 12]
상기 식에서, In the above equation,
상기 화학식 10의 A; 상기 화학식 11의 A1 및 A2 중 적어도 하나; 상기 화학식 12의 A3 내지 A5 중 적어도 하나;는 화학식 1의 화합물에서 유래된 기이며,A of Formula 10; At least one of A 1 and A 2 of Formula 11; At least one of A 3 to A 5 of Formula 12 is a group derived from the compound of Formula 1,
상기 B는 디아민에서 유래된 기이며,The B is a group derived from diamine,
상기 화학식 11에서 x 및 y는 x+y=1을 만족하는 유리수이고,In Formula 11, x and y are rational numbers that satisfy x+y=1,
상기 화학식 12에서 x, y, 및 z는 x + y + z = 1, 0 < y + z ≤ 0.7, 및 0.3 ≤ x + y < 1을 만족하는 유리수이다. In Formula 12, x, y, and z are rational numbers that satisfy x + y + z = 1, 0 < y + z ≤ 0.7, and 0.3 ≤ x + y < 1.
여기서, 상기 화학식 10 내지 12로 표시되는 각 반복단위의 중합도는 특별히 제한되지 않으며, 당 분야에 공지된 범위 내에서 적절히 조절할 수 있다. 일례로, 1 내지 10,000 사이의 정수일 수 있다. Here, the degree of polymerization of each repeating unit represented by Formulas 10 to 12 is not particularly limited and can be appropriately adjusted within a range known in the art. For example, it may be an integer between 1 and 10,000.
상기 화학식 11 및 12에서, A1 내지 A5는 전술한 화학식 1의 테트라카르복실산 이무수물과 상이한 또 다른 테트라카르복실산 이무수물에서 유래된 기를 포함할 수 있다. 이러한 테트라카르복실산 이무수물은 전술한 폴리아믹산 조성물에 기재된 추가 테트라카르복실산 이무수물 성분과 동일하므로, 별도의 내용은 생략한다. 또한 상기 화학식 10 내지 12에서 B는 디아민에서 유래된 기이며, 이러한 디아민의 성분은 전술한 폴리아믹산 조성물에 기재된 구체 디아민 성분과 동일하므로, 별도의 내용은 생략한다. 그리고 화학식 12에서, A1 내지 A5는 서로 동일하거나 상이할 수 있으며, 구체적으로 A4 또는 A5는 A3와 동일하거나 또는 상이할 수 있다.In Formulas 11 and 12, A 1 to A 5 may include a group derived from another tetracarboxylic dianhydride that is different from the tetracarboxylic dianhydride of Formula 1 described above. Since this tetracarboxylic dianhydride is the same as the additional tetracarboxylic dianhydride component described in the polyamic acid composition described above, further details are omitted. In addition, in Formulas 10 to 12, B is a group derived from diamine, and since the diamine component is the same as the specific diamine component described in the polyamic acid composition described above, further details are omitted. And in Formula 12, A 1 to A 5 may be the same as or different from each other, and specifically, A 4 or A 5 may be the same as or different from A 3 .
본 발명에 따른 폴리이미드 중합체는 당 분야에 알려진 통상적인 방법에 따라 폴리아믹산 용액(예, 폴리아믹산 조성물) 또는 그 폴리아믹산을 탈수 폐환시켜 얻어질 수 있다. 일례로, 폴리아믹산 용액을 30 내지 350℃의 범위에서 온도를 서서히 승온시키면서 0.5 내지 8시간 동안 이미드 폐환반응 (Imidazation)을 유도시켜 제조될 수 있다. The polyimide polymer according to the present invention can be obtained by dehydrating and ring-closing a polyamic acid solution (eg, polyamic acid composition) or the polyamic acid according to a conventional method known in the art. For example, the polyamic acid solution can be prepared by inducing an imide ring closure reaction (Imidazation) for 0.5 to 8 hours while gradually increasing the temperature in the range of 30 to 350 ° C.
이때 이미드화율은 반드시 100%일 필요는 없고, 용도나 목적에 따라 임의로 조정할 수 있다. 또한 중합 온도는 -20℃ 내지 150℃의 임의의 온도를 선택할 수 있으며, 바람직하게는 -5℃ 내지 100℃의 범위일 수 있다. 그리고 반응은 임의의 농도로 실시할 수 있지만, 농도가 지나치게 낮으면 고분자량의 중합체를 얻는 것이 어려워지고, 농도가 지나치게 높으면 반응액의 점성이 지나치게 높아져 균일한 교반이 곤란해지므로, 반응 용액 중에서 테트라카복실산 이무수물과 디아민을 합한 전체 농도가 1 내지 50 중량%일 수 있으며, 바람직하게는 5 내지 30 중량%일 수 있다. At this time, the imidization rate does not necessarily have to be 100% and can be arbitrarily adjusted depending on the use or purpose. Additionally, the polymerization temperature may be selected at any temperature from -20°C to 150°C, and preferably ranges from -5°C to 100°C. The reaction can be carried out at any concentration, but if the concentration is too low, it becomes difficult to obtain a high molecular weight polymer, and if the concentration is too high, the viscosity of the reaction solution becomes too high and uniform stirring becomes difficult, so tetra The total concentration of carboxylic dianhydride and diamine may be 1 to 50% by weight, preferably 5 to 30% by weight.
본 발명에 따라 발열 용액중합된 폴리아믹산을 이미드화하는 방법은 특별히 제한되지 않으며, 일례로 폴리아믹산의 용액을 그대로 가열하는 열이미드화법, 폴리아믹산의 용액에 촉매를 첨가하는 촉매 이미드화(또는 화학이미드화법)법, 또는 열이미드화법과 촉매이미드화법을 병용하여 적용할 수 있다.The method of imidizing the polyamic acid polymerized with exothermic solution according to the present invention is not particularly limited, and examples include thermal imidization method of heating the polyamic acid solution as is, catalyst imidization (or It can be applied by combining the chemical imidization method, or the thermal imidization method and the catalytic imidization method.
열이미드화법은 폴리아믹산 용액을 30 내지 400℃의 온도 범위에서 서서히 승온시키면서 1 내지 10시간 동안 가열하여 이미드화하는 방법이다. 이때 온도는 100℃ 내지 400℃, 바람직하게는 120℃ 내지 250℃일 수 있으며, 이미드화 반응에 의해 생성되는 물을 제거하면서 실시하는 것이 바람직하다. The thermal imidization method is a method of imidizing a polyamic acid solution by heating it for 1 to 10 hours while slowly raising the temperature in the temperature range of 30 to 400 ° C. At this time, the temperature may be 100°C to 400°C, preferably 120°C to 250°C, and it is preferably carried out while removing water generated by the imidization reaction.
또한 촉매 이미드화법은 염기성 촉매와 산무수물을 첨가하고, -20℃ 내지 250℃, 바람직하게는 0℃ 내지 180℃에서 교반하여 이미드화하는 방법이다. In addition, the catalytic imidization method is a method of imidizing by adding a basic catalyst and an acid anhydride and stirring at -20°C to 250°C, preferably 0°C to 180°C.
상기 염기성 촉매는 당 분야에 공지된 것을 사용할 수 있으며, 일례로 피리딘, 트리에틸아민, 트리메틸아민, 트리부틸아민, 트리옥틸아민 등을 들 수 있고, 이소퀴놀린, β-피콜린, 피리딘 등의 아민류 등으로 대표되는 이미드화 촉매를 사용할 수도 있다. 이중에서도 피리딘은 반응을 진행시키는데 적당한 염기성을 가지므로 바람직하다. 이러한 염기성 촉매의 양은 특별히 제한되지 않으며, 일례로 아미드산기의 0.5 내지 30 몰배, 바람직하게는 2 내지 20 몰배일 수 있다. The basic catalyst may be one known in the art, and examples include pyridine, triethylamine, trimethylamine, tributylamine, trioctylamine, and amines such as isoquinoline, β-picoline, and pyridine. Imidation catalysts such as these can also be used. Among these, pyridine is preferable because it has an appropriate basicity to proceed with the reaction. The amount of this basic catalyst is not particularly limited, and may be, for example, 0.5 to 30 mole times the amount of the amic acid group, preferably 2 to 20 mole times the amount of the amic acid group.
또한 산무수물로는 무수 아세트산, 무수 트리멜리트산, 무수 피로멜리트산 등의 산무수물로 대표되는 탈수제를 사용할 수 있고, 그 중에서도 무수 아세트산을 사용하면 반응 종료 후의 정제가 용이해지므로 바람직하다. 이러한 산무수물의 양은 특별히 제한되지 않으며, 일례로 아미드산기의 1 내지 50 몰배일 수 있으며, 바람직하게는 3 내지 30몰배일 수 있다. 촉매 이미드화에 의한 이미드화율은, 촉매량과 반응 온도, 반응 시간을 조절함으로써 자유롭게 제어할 수 있다.Additionally, as the acid anhydride, dehydrating agents represented by acid anhydrides such as acetic anhydride, trimellitic anhydride, and pyromellitic anhydride can be used. Among them, the use of acetic anhydride is preferable because it facilitates purification after completion of the reaction. The amount of this acid anhydride is not particularly limited and may be, for example, 1 to 50 mole times the amount of the amic acid group, and preferably 3 to 30 mole times the amount of the amic acid group. The imidization rate by catalyst imidization can be freely controlled by adjusting the catalyst amount, reaction temperature, and reaction time.
또한 열이미드화법과 화학이미드화법을 병용하는 경우 폴리아믹산 용액의 가열 조건은 폴리아믹산 용액의 종류, 제조되는 폴리이미드 필름의 두께 등에 의하여 변경될 수 있다. 상기 제조예를 설명하면, 폴리아믹산 용액에 산이무수물과 염기성 촉매를 투입한 후, 80 내지 400℃, 바람직하게는 150 내지 250℃에서 가열하여 탈수제 및 이미드화 촉매를 활성화함으로써 부분적으로 경화 및 건조하여 실시될 수 있다. In addition, when the thermal imidization method and the chemical imidization method are used together, the heating conditions of the polyamic acid solution may change depending on the type of polyamic acid solution, the thickness of the polyimide film to be produced, etc. To explain the above production example, acid dianhydride and basic catalyst are added to a polyamic acid solution, and then heated at 80 to 400°C, preferably 150 to 250°C to activate the dehydrating agent and imidization catalyst, thereby partially curing and drying. It can be implemented.
전술한 폴리아믹산 또는 폴리이미드의 반응 용액으로부터 생성된 폴리아믹산 또는 폴리이미드를 회수하는 방법은 특별히 제한되지 않으며, 일례로 상기 반응 용액을 빈용매에 투입하여 침전시키면 된다. 침전에 사용하는 빈용매로는 메탄올, 아세톤, 헥산, 부틸셀로솔브, 헵탄, 메틸에틸케톤, 메틸이소부틸케톤, 에탄올, 톨루엔, 벤젠, 물 등을 들 수 있으나, 이에 특별히 제한되지 않는다. The method for recovering the polyamic acid or polyimide produced from the reaction solution of the above-described polyamic acid or polyimide is not particularly limited, and for example, the reaction solution may be added to a poor solvent to cause precipitation. Poor solvents used for precipitation include, but are not particularly limited to, methanol, acetone, hexane, butyl cellosolve, heptane, methyl ethyl ketone, methyl isobutyl ketone, ethanol, toluene, benzene, and water.
빈용매에 투입하여 침전시킨 폴리머는 여과하여 회수한 후, 상압 혹은 감압 하에서 상온 혹은 가열하여 건조시킬 수 있다. The polymer precipitated by adding it to a poor solvent can be recovered by filtration and then dried at room temperature or by heating under normal or reduced pressure.
상기와 같이 수득된 본 발명의 폴리아믹산 및 폴리이미드 중합체의 분자량은 특별히 제한되지 않으며, 당 분야에 공지된 통상의 분자량 범위를 가질 수 있다. 일 구체예를 들면, 겔투과크로마토그래피법에 측정된 상기 중합체의 중량 평균 분자량(Mw)은 5,000 내지 1,000,000 g/mol일 수 있으며, 바람직하게는 10,000 내지 150,000 g/mol이다.The molecular weight of the polyamic acid and polyimide polymer of the present invention obtained as described above is not particularly limited and may have a typical molecular weight range known in the art. For example, the weight average molecular weight (Mw) of the polymer measured by gel permeation chromatography may be 5,000 to 1,000,000 g/mol, and preferably 10,000 to 150,000 g/mol.
상술한 본 발명의 폴리이미드 중합체는, 분자 내 트리페닐메탄과 에테르기를 함유하는 기본 골격을 가지면서 기능성 모이어티를 포함하는 신규 테트라카복실산 이무수물을 적용하여 제조됨으로써, 우수한 내열성과 기계적 특성을 확보하면서 유전성과 용해도가 개선되므로, 당 분야에 공지된 통상의 필름, 조성물, 전자기기용 기판, 전기 및 전자부품용 코팅 소재 재료로서 유용하게 적용될 수 있다. 이때 상기 중합체를 포함하는 조성물의 경우, 구성 성분, 함량, 조성 및/또는 그 용도 등에 특별히 제한되지 않는다.The polyimide polymer of the present invention described above is manufactured by applying a novel tetracarboxylic dianhydride containing functional moieties while having a basic skeleton containing triphenylmethane and ether groups in the molecule, thereby ensuring excellent heat resistance and mechanical properties. Since the dielectric properties and solubility are improved, it can be usefully applied as conventional films, compositions, substrates for electronic devices, and coating materials for electrical and electronic components known in the art. At this time, in the case of a composition containing the polymer, there is no particular limitation on components, content, composition, and/or its use.
<폴리이미드 필름><Polyimide film>
아울러 본 발명의 또 다른 일 실시예는, 전술한 폴리이미드 중합체를 포함하는 폴리이미드 필름이다. In addition, another embodiment of the present invention is a polyimide film containing the above-described polyimide polymer.
상기 폴리이미드 필름의 제조방법은 특별히 제한되지 않으며 당 분야에 알려진 통상적인 방법에 따라 제조될 수 있다. The manufacturing method of the polyimide film is not particularly limited and can be manufactured according to conventional methods known in the art.
일 실시예를 들면, 상술한 폴리아믹산 용액, 즉 폴리아믹산 조성물을 지지체(예, 기재) 상에 도포(캐스팅)한 후 30 내지 350℃의 범위에서 온도를 서서히 승온시키면서 0.5 내지 8시간 동안 이미드 폐환반응 (Imidization)을 유도시켜 제조될 수 있다. 이때 아르곤이나 질소 등의 불활성 분위기 하에서 반응할 수 있다. For example, the above-described polyamic acid solution, that is, the polyamic acid composition, is applied (cast) on a support (e.g., a substrate), and then the imide is added for 0.5 to 8 hours while gradually increasing the temperature in the range of 30 to 350 ° C. It can be manufactured by inducing a ring closure reaction (Imidization). At this time, the reaction may occur under an inert atmosphere such as argon or nitrogen.
다른 일 실시예를 들면, 폴리이미드 조성물(예, 중합체 함유 용액)을 지지체(예, 기판) 상에 도포한 후 경화시키는 방법에 의해 제조될 수 있다. As another example, it can be manufactured by applying a polyimide composition (eg, polymer-containing solution) on a support (eg, substrate) and then curing it.
상기 도포 방법은 당 업계에 알려진 통상적인 방법을 제한 없이 사용할 수 있으며, 일례로 스핀코팅(Spin coating), 딥 코팅(Dip coating), 용매 캐스팅(Solvent casting), 슬롯다이 코팅(Slot die coating) 및 스프레이 코팅으로 이루어진 군에서 선택되는 적어도 어느 하나의 방법에 의해 이루어질 수 있다. The application method can be used without limitation to conventional methods known in the art, such as spin coating, dip coating, solvent casting, slot die coating, and It can be achieved by at least one method selected from the group consisting of spray coating.
한편 종래에는 폴리아믹산 상태의 조성물을 기판에 도포한 후 예비-경화와 본-경화의 2단계 열경화 공정을 거쳐 제조하는 것이 일반적이었다. 이때 예비-경화는 100 내지 150℃의 온도에서 용매를 휘발시키기 위한 과정이고, 본-경화는 300 내지 550℃의 온도에서 폴리아믹산의 폐환 탈수반응을 통해서 폴리이미드로 중합시키기 위한 과정이다. 즉, 폴리이미드의 불용·불융 특성으로 인해, 비교적 불안정한 폴리아믹산 상태에서 필름화 공정을 거쳐야만 했다. Meanwhile, conventionally, it was common to apply a polyamic acid composition to a substrate and then manufacture it through a two-step thermal curing process of pre-curing and main-curing. At this time, pre-curing is a process to volatilize the solvent at a temperature of 100 to 150°C, and main-curing is a process to polymerize polyamic acid into polyimide through ring-closure dehydration reaction at a temperature of 300 to 550°C. In other words, due to the insoluble and infusible characteristics of polyimide, the film forming process had to be performed in a relatively unstable polyamic acid state.
이에 비해, 본 발명에서는 용해도가 개선된 폴리이미드 중합체를 제시함으로써 폴리이미드 상태의 조성물을 제공할 수 있다. 이에 따라, 불안정한 폴리아믹산 상태에서 필름화 과정을 거치지 않고, 안정한 폴리이미드 상태의 폴리아미드 조성물을 기판에 도포한 후 용매 휘발 공정만을 거치더라도 필름화가 가능하다는 장점이 있다. In contrast, the present invention can provide a composition in a polyimide state by presenting a polyimide polymer with improved solubility. Accordingly, there is an advantage that film formation is possible by applying a polyamide composition in a stable polyimide state to a substrate and then only going through a solvent volatilization process, without going through a film formation process in an unstable polyamic acid state.
이와 같이 형성된 본 발명의 폴리이미드 필름의 두께는 특별히 제한되지 않으며, 적용하고자 하는 분야에 따라 적절히 조절될 수 있다. 일례로 1 내지 150㎛ 범위일 수 있으며, 구체적으로 5 내지 100 ㎛이며, 보다 구체적으로 10 내지 80 ㎛일 수 있다.The thickness of the polyimide film of the present invention formed in this way is not particularly limited and can be appropriately adjusted depending on the field to which it is applied. For example, it may be in the range of 1 to 150 ㎛, specifically 5 to 100 ㎛, and more specifically 10 to 80 ㎛.
일 구체예를 들면, 상기 폴리이미드 필름은 하기 (i) 내지 (iii) 중 적어도 2개 이상의 물성을 만족할 수 있으며, 바람직하게는 모두 만족할 수 있다. (i) 열중량 분석(TGA)으로 측정된 5중량% 손실온도(Td, 5%)가 300℃를 초과하며, 구체적으로 350℃ 이상, 바람직하게는 400℃ 이상일 수 있다. (ii) 주파수 10GHz에서 유전율(Dk)은 3.5 미만이며, 유전손실(Df)은 0.006 미만이며, 바람직하게는 유전율(Dk)은 3.0 미만이고 유전손실(Df)은 0.004 미만이다. (iii) 흡습율이 1 % 미만이다. For example, the polyimide film may satisfy at least two of the following physical properties (i) to (iii), and preferably all of them. (i) The 5% weight loss temperature (Td, 5%) measured by thermogravimetric analysis (TGA) exceeds 300°C, and may specifically be 350°C or higher, preferably 400°C or higher. (ii) At a frequency of 10 GHz, the dielectric constant (Dk) is less than 3.5 and the dielectric loss (Df) is less than 0.006. Preferably, the dielectric constant (Dk) is less than 3.0 and the dielectric loss (Df) is less than 0.004. (iii) Moisture absorption rate is less than 1%.
전술한 물성을 갖는 본 발명의 폴리이미드 중합체, 폴리이미드 조성물 및 필름은, 종래 폴리이미드가 사용되는 모든 분야에 적용될 수 있으며, 구체적으로 내열성과 우수한 기계적 특성, 저 유전율 등이 요구되는 다양한 기술분야에 유용하게 적용될 수 있다. 일례로, 유기 EL 소자(OLED)용 디스플레이, 액정 소자용 디스플레이, TFT 기판, 플렉서블 인쇄회로기판, 플렉서블(Flexible) OLED 면조명 기판, 전자 종이용 기판소재와 같은 플렉서블(Flexible) 디스플레이용 기판 및/또는 보호막으로 활용될 수 있다. 그러나 이에 제한되는 것은 아니다. The polyimide polymer, polyimide composition, and film of the present invention having the above-described physical properties can be applied to all fields where conventional polyimide is used, and specifically, to various technical fields that require heat resistance, excellent mechanical properties, low dielectric constant, etc. It can be usefully applied. For example, flexible display substrates such as displays for organic EL devices (OLED), displays for liquid crystal devices, TFT substrates, flexible printed circuit boards, flexible OLED surface lighting substrates, and substrate materials for electronic paper, and/ Alternatively, it can be used as a protective shield. However, it is not limited to this.
이하, 구체적인 실시예를 통해 본 발명을 보다 구체적으로 설명한다. 하기 실시예는 본 발명의 이해를 돕기 위한 예시에 불과하며, 본 발명의 범위가 이에 한정되는 것은 아니다.Hereinafter, the present invention will be described in more detail through specific examples. The following examples are merely examples to aid understanding of the present invention, and the scope of the present invention is not limited thereto.
[합성예 1~3: 테트라카복실산 이무수물 단량체의 합성][Synthesis Examples 1 to 3: Synthesis of tetracarboxylic dianhydride monomer]
합성예 1: 4,4'-(((1-(3,5-비스(트리플루오로메틸)페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈산 무수물의 합성Synthesis Example 1: 4,4'-(((1-(3,5-bis(trifluoromethyl)phenyl)ethane-1,1-diyl)bis(4,1-phenylene))bis(oxy) )Synthesis of diphthalic anhydride
1-1: 4,4'-(1-(3,5-비스(트리플루오로메틸)페닐)에탄-1,1-디일)디페놀의 합성1-1: Synthesis of 4,4'-(1-(3,5-bis(trifluoromethyl)phenyl)ethane-1,1-diyl)diphenol
3',5'-비스(트리플루오로메틸)아세트페논 139.65 g (0.545 mol)과 페놀 108.77 g (1.156 mol)을 반응기에 넣은 후, 질소 분위기에서 교반하고 반응기를 50℃로 승온한다. 트리플릭산 20.46 g (0.136 mol)을 소량씩 천천히 주입한 후, 22시간 교반 한다. 반응이 종료되면 교반중인 80℃ 증류수에 반응물을 투입하여 침전시키고 여과하였다. 침전물을 건조시키고 디클로로메탄으로 재결정하여 정제된 결정을 여과하고 진공건조하였다. 수득률은 40%였다.139.65 g (0.545 mol) of 3',5'-bis(trifluoromethyl)acetphenone and 108.77 g (1.156 mol) of phenol were added to the reactor, stirred in a nitrogen atmosphere, and the reactor was heated to 50°C. 20.46 g (0.136 mol) of triflic acid was slowly injected in small amounts and stirred for 22 hours. When the reaction was completed, the reactant was added to stirred distilled water at 80°C, precipitated, and filtered. The precipitate was dried and recrystallized from dichloromethane, and the purified crystals were filtered and dried in vacuum. The yield rate was 40%.
1H NMR (DMSO-d6, 400MHz, ppm): 9.06(d, 2H), 8.02(s, 1H), 7.75(s, 2H), 7.01(d, 4H), 6.67(d, 4H), 2.28(s, 3H) 1H NMR (DMSO-d 6 , 400MHz, ppm): 9.06(d, 2H), 8.02(s, 1H), 7.75(s, 2H), 7.01(d, 4H), 6.67(d, 4H), 2.28 (s, 3H)
1-2: 4,4'-(((1-(3,5-비스(트리플루오로메틸)페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈로니트릴의 합성1-2: 4,4'-(((1-(3,5-bis(trifluoromethyl)phenyl)ethane-1,1-diyl)bis(4,1-phenylene))bis(oxy) ) Synthesis of diphthalonitrile
4,4'-(1-(3,5-비스(트리플루오로메틸)페닐)에탄-1,1-디일)디페놀 23.63 g (0.055 mol), 4-나이트로프탈로니트릴 19.67 g (0.114 mol), 탄산 칼륨 22.98 g (0.166 mol) 그리고 무수-디메틸포름아마이드 200 mL를 반응기에 넣은 후, 질소 분위기에서 교반하였다. 반응기를 120℃로 승온하고 16시간 교반하였다. 반응이 종료되면 교반 중인 증류수에 반응물을 투입하여 침전시키고 여과하였다. 침전물을 에틸 아세테이트에 녹이고 분별깔대기에 증류수와 함께 넣고 추출하여 불순물을 제거한다. 유기층을 분리해서 감압농축하고 에틸아세트와 노말-헥세인으로 재결정하여 정제된 결정을 여과하고 진공건조하였다. 수득률은 97%였다.4,4'-(1-(3,5-bis(trifluoromethyl)phenyl)ethane-1,1-diyl)diphenol 23.63 g (0.055 mol), 4-nitrophthalonitrile 19.67 g (0.114 mol) ), 22.98 g (0.166 mol) of potassium carbonate, and 200 mL of anhydrous dimethylformamide were added to the reactor and stirred in a nitrogen atmosphere. The reactor was heated to 120°C and stirred for 16 hours. When the reaction was completed, the reactant was added to stirring distilled water, precipitated, and filtered. Dissolve the precipitate in ethyl acetate, place it in a separatory funnel with distilled water, extract, and remove impurities. The organic layer was separated, concentrated under reduced pressure, recrystallized with ethyl acetate and normal-hexane, and the purified crystals were filtered and dried in vacuum. The yield rate was 97%.
1H NMR (DMSO-d6, 400MHz, ppm): 8.16(d, 2H), 8.08(s, 1H), 7.94(s, 1H), 7.70(s, 2H), 7.58(d, 2H), 7.33(m, 8H), 2.29(s, 3H) 1H NMR (DMSO-d 6 , 400MHz, ppm): 8.16(d, 2H), 8.08(s, 1H), 7.94(s, 1H), 7.70(s, 2H), 7.58(d, 2H), 7.33 (m, 8H), 2.29(s, 3H)
1-3: 4,4'-(((1-(3,5-비스(트리플루오로메틸)페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈산의 합성1-3: 4,4'-(((1-(3,5-bis(trifluoromethyl)phenyl)ethane-1,1-diyl)bis(4,1-phenylene))bis(oxy) )Synthesis of diphthalic acid
4,4'-(((1-(3,5-비스(트리플루오로메틸)페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈로니트릴 36.0 g (0.053 mol), 수산화 나트륨 84.88 g (2.122 mol), 메탄올 200 mL 그리고 증류수 300 mL를 반응기에 넣은 후 반응기를 100℃로 승온하고 52시간 교반하였다. 반응이 종료되면 가열된 상태의 반응물을 여과하여 고체 불순물을 제거한다. 여액을 0~10℃로 냉각하고 교반하면서 여액 pH 1이 될때까지 HCl(35%)를 첨가한다. 침전물이 형성되면 여과하고 진공건조하였다. 수득률은 88%였다.4,4'-(((1-(3,5-bis(trifluoromethyl)phenyl)ethane-1,1-diyl)bis(4,1-phenylene))bis(oxy))diphthalonitrile 36.0 g (0.053 mol), 84.88 g (2.122 mol) of sodium hydroxide, 200 mL of methanol, and 300 mL of distilled water were added to the reactor, then the reactor was heated to 100°C and stirred for 52 hours. When the reaction is completed, the heated reactant is filtered to remove solid impurities. Cool the filtrate to 0~10℃ and add HCl (35%) while stirring until the pH of the filtrate reaches 1. When a precipitate formed, it was filtered and vacuum dried. The yield rate was 88%.
1H NMR (DMSO-d6, 400MHz, ppm): 13.17(s, 4H), 8.05(s, 1H), 7.78(d, 2H), 7.68(s, 2H), 7.14(m, 12H), 2.30(s, 3H) 1 H NMR (DMSO-d 6 , 400 MHz, ppm): 13.17 (s, 4H), 8.05 (s, 1H), 7.78 (d, 2H), 7.68 (s, 2H), 7.14 (m, 12H), 2.30 (s, 3H)
1-4: 4,4'-(((1-(3,5-비스(트리플루오로메틸)페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈산 무수물의 합성1-4: 4,4'-(((1-(3,5-bis(trifluoromethyl)phenyl)ethane-1,1-diyl)bis(4,1-phenylene))bis(oxy) )Synthesis of diphthalic anhydride
4,4'-(((1-(3,5-비스(트리플루오로메틸)페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈산 30 g (0.040 mol)과 아세트산 무수물 90 mL을 반응기에 넣은 후 140℃로 승온하고 8시간 교반하였다. 반응이 종료되면 반응기를 상온까지 냉각하였다. 생긴 결정을 여과하고 소량의 아세트산으로 씻어낸 후 진공건조하여 하기 화학식으로 표시되는 최종 화합물(수득률: 86%)을 제조하였다. 4,4'-(((1-(3,5-bis(trifluoromethyl)phenyl)ethane-1,1-diyl)bis(4,1-phenylene))bis(oxy))diphthalic acid 30 g (0.040 mol) and 90 mL of acetic anhydride were added to the reactor, heated to 140°C, and stirred for 8 hours. When the reaction was completed, the reactor was cooled to room temperature. The resulting crystals were filtered, washed with a small amount of acetic acid, and dried under vacuum to prepare the final compound (yield: 86%) represented by the following chemical formula.
1H NMR (DMSO-d6, 400MHz, ppm): 8.09(m, 3H), 7.71(s, 2H), 7.58(d, 2H), 7.47(s, 2H), 7.23(m, 8H), 2.34(s, 3H) 1 H NMR (DMSO-d 6 , 400 MHz, ppm): 8.09 (m, 3H), 7.71 (s, 2H), 7.58 (d, 2H), 7.47 (s, 2H), 7.23 (m, 8H), 2.34 (s, 3H)
합성예 2: 4,4'-(2,2,2-트리플루오로-1-(4-(트리플루오로메틸)페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈산 무수물의 합성Synthesis Example 2: 4,4'-(2,2,2-trifluoro-1-(4-(trifluoromethyl)phenyl)ethane-1,1-diyl)bis(4,1-phenylene) )Synthesis of bis(oxy))diphthalic anhydride
2-1: 4,4'-(2,2,2-트리플루오로-1-(4-(트리플루오로메틸)페닐)에탄-1,1-디일)디페놀의 합성2-1: Synthesis of 4,4'-(2,2,2-trifluoro-1-(4-(trifluoromethyl)phenyl)ethane-1,1-diyl)diphenol
2,2,2-트리플루오로-4'-메틸아세토페논 50 g (0.207 mol)과 페놀 41.20 g (0.438 mol)을 반응기에 넣은 후, 질소 분위기에서 교반하고 반응기를 50℃로 승온한다. 트리플릭산 7.75 g (0.052 mol)을 소량씩 천천히 주입한 후, 22시간 교반 한다. 반응이 종료되면 교반중인 80℃ 증류수에 반응물을 투입하여 침전시키고 여과하였다. 침전물을 건조시키고 디클로로메탄으로 재결정하여 정제된 결정을 여과하고 진공건조하였다. 수득률은 51%였다.50 g (0.207 mol) of 2,2,2-trifluoro-4'-methylacetophenone and 41.20 g (0.438 mol) of phenol were added to the reactor, stirred in a nitrogen atmosphere, and the reactor was heated to 50°C. Slowly inject 7.75 g (0.052 mol) of triflic acid in small amounts and stir for 22 hours. When the reaction was completed, the reactant was added to stirred distilled water at 80°C, precipitated, and filtered. The precipitate was dried and recrystallized from dichloromethane, and the purified crystals were filtered and dried in vacuum. The yield rate was 51%.
1H NMR (DMSO-d6, 400MHz, ppm): 9.01(d, 2H), 7.50(d, 2H), 7.09(m, 6H), 6.67(d, 4H) 1 H NMR (DMSO-d 6 , 400MHz, ppm): 9.01(d, 2H), 7.50(d, 2H), 7.09(m, 6H), 6.67(d, 4H)
2-2: 4,4'-(2,2,2-트리플루오로-1-(4-(트리플루오로메틸)페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈로니트릴의 합성2-2: 4,4'-(2,2,2-trifluoro-1-(4-(trifluoromethyl)phenyl)ethane-1,1-diyl)bis(4,1-phenylene) )Synthesis of bis(oxy))dipthalonitrile
4,4'-(2,2,2-트리플루오로-1-(4-(트리플루오로메틸)페닐)에탄-1,1-디일)디페놀 30.0 g (0.073 mol), 4-나이트로프탈로니트릴 25.82 g (0.149 mol), 탄산 칼륨 30.17 g (0.218 mol) 그리고 무수-디메틸포름아마이드 200 mL를 반응기에 넣은 후, 질소 분위기에서 교반하였다. 반응기를 120℃로 승온하고 16시간 교반하였다. 반응이 종료되면 교반 중인 증류수에 반응물을 투입하여 침전시키고 여과하였다. 침전물을 에틸 아세테이트에 녹이고 분별깔대기에 증류수와 함께 넣고 추출하여 불순물을 제거한다. 유기층을 분리해서 감압농축하고 에틸아세트와 노말-헥세인으로 재결정하여 정제된 결정을 여과하고 진공건조하였다. 수득률은 88%였다.4,4'-(2,2,2-trifluoro-1-(4-(trifluoromethyl)phenyl)ethane-1,1-diyl)diphenol 30.0 g (0.073 mol), 4-nitrope 25.82 g (0.149 mol) of talonitrile, 30.17 g (0.218 mol) of potassium carbonate, and 200 mL of anhydrous dimethylformamide were added to the reactor and stirred in a nitrogen atmosphere. The reactor was heated to 120°C and stirred for 16 hours. When the reaction was completed, the reactant was added to stirring distilled water, precipitated, and filtered. Dissolve the precipitate in ethyl acetate, place it in a separatory funnel with distilled water, and extract to remove impurities. The organic layer was separated, concentrated under reduced pressure, recrystallized with ethyl acetate and normal-hexane, and the purified crystals were filtered and dried in vacuum. The yield rate was 88%.
1H NMR (DMSO-d6, 400MHz, ppm): 8.01(d, 2H), 7.99(s, 2H), 7.55(m, 4H), 7.32(d, 4H), 7.13(m, 6H) 1 H NMR (DMSO-d 6 , 400 MHz, ppm): 8.01 (d, 2H), 7.99 (s, 2H), 7.55 (m, 4H), 7.32 (d, 4H), 7.13 (m, 6H)
2-3: 4,4'-(2,2,2-트리플루오로-1-(4-(트리플루오로메틸)페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈산의 합성2-3: 4,4'-(2,2,2-trifluoro-1-(4-(trifluoromethyl)phenyl)ethane-1,1-diyl)bis(4,1-phenylene) )Synthesis of bis(oxy))diphthalic acid
4,4'-(2,2,2-트리플루오로-1-(4-(트리플루오로메틸)페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈로니트릴 35.0 g (0.0527 mol), 수산화 나트륨 84.27 g (2.107 mol), 메탄올 200 mL 그리고 증류수 300 mL를 반응기에 넣은 후 반응기를 100℃로 승온하고 52시간 교반하였다. 반응이 종료되면 가열된 상태의 반응물을 여과하여 고체 불순물을 제거한다. 여액을 0~10℃로 냉각하고 교반하면서 여액 pH 1이 될때까지 HCl(35%)를 첨가한다. 침전물이 형성되면 여과하고 진공건조하였다. 수득률은 91%였다.4,4'-(2,2,2-trifluoro-1-(4-(trifluoromethyl)phenyl)ethane-1,1-diyl)bis(4,1-phenylene))bis(oxy )) 35.0 g (0.0527 mol) of diphthalonitrile, 84.27 g (2.107 mol) of sodium hydroxide, 200 mL of methanol, and 300 mL of distilled water were added to the reactor, then the reactor was heated to 100°C and stirred for 52 hours. When the reaction is completed, the heated reactant is filtered to remove solid impurities. Cool the filtrate to 0~10℃ and add HCl (35%) while stirring until the pH of the filtrate reaches 1. When a precipitate formed, it was filtered and vacuum dried. The yield rate was 91%.
1H NMR (DMSO-d6, 400MHz, ppm): 13.21(s, 4H), 7.85(d, 2H), 7.61(d, 2H), 7.41(m, 6H), 7.11(m, 8H) 1 H NMR (DMSO-d 6 , 400 MHz, ppm): 13.21 (s, 4H), 7.85 (d, 2H), 7.61 (d, 2H), 7.41 (m, 6H), 7.11 (m, 8H)
2-4: 4,4'-(2,2,2-트리플루오로-1-(4-(트리플루오로메틸)페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈산 무수물의 합성2-4: 4,4'-(2,2,2-trifluoro-1-(4-(trifluoromethyl)phenyl)ethane-1,1-diyl)bis(4,1-phenylene) )Synthesis of bis(oxy))diphthalic anhydride
4,4'-(2,2,2-트리플루오로-1-(4-(트리플루오로메틸)페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈산 30.0 g (0.041 mol)과 아세트산 무수물 90 mL을 반응기에 넣은 후 140℃로 승온하고 8시간 교반하였다. 반응이 종료되면 반응기를 상온까지 냉각하였다. 생긴 결정을 여과하고 소량의 아세트산으로 씻어낸 후 진공건조하여 하기 화학식으로 표시되는 최종 화합물(수득률: 91%)을 제조하였다.4,4'-(2,2,2-trifluoro-1-(4-(trifluoromethyl)phenyl)ethane-1,1-diyl)bis(4,1-phenylene))bis(oxy )) 30.0 g (0.041 mol) of diphthalic acid and 90 mL of acetic anhydride were added to the reactor, then heated to 140°C and stirred for 8 hours. When the reaction was completed, the reactor was cooled to room temperature. The resulting crystals were filtered, washed with a small amount of acetic acid, and dried under vacuum to prepare the final compound (yield: 91%) represented by the following formula.
1H NMR (DMSO-d6, 400MHz, ppm): 8.01(d, 2H), 7.62(d, 2H), 7.47(d, 2H), 7.32(s, 2H), 7.19(d, 2H), 7.05(m, 8H) 1 H NMR (DMSO-d 6 , 400MHz, ppm): 8.01(d, 2H), 7.62(d, 2H), 7.47(d, 2H), 7.32(s, 2H), 7.19(d, 2H), 7.05 (m, 8H)
합성예 3: Synthesis Example 3:
3-1: 4,4'-(1-(4-헥실페닐)에탄-1,1-디일)디페놀의 합성3-1: Synthesis of 4,4'-(1-(4-hexylphenyl)ethane-1,1-diyl)diphenol
4'-헥실아세토페논 50 g (0.193 mol)과 페놀 38.58 g (0.410 mol)을 반응기에 넣은 후, 질소 분위기에서 교반하고 반응기를 50℃로 승온한다. 트리플릭산 7.26 g (0.048 mol)을 소량씩 천천히 주입한 후, 22시간 교반 한다. 반응이 종료되면 교반중인 80℃ 증류수에 반응물을 투입하여 침전시키고 여과하였다. 침전물을 건조시키고 디클로로메탄으로 재결정하여 정제된 결정을 여과하고 진공건조하였다. 수득률은 52%였다.50 g (0.193 mol) of 4'-hexylacetophenone and 38.58 g (0.410 mol) of phenol were added to the reactor, stirred in a nitrogen atmosphere, and the reactor was heated to 50°C. Slowly inject 7.26 g (0.048 mol) of triflic acid in small amounts and stir for 22 hours. When the reaction was completed, the reactant was added to stirred distilled water at 80°C, precipitated, and filtered. The precipitate was dried and recrystallized from dichloromethane, and the purified crystals were filtered and dried in vacuum. The yield rate was 52%.
1H NMR (DMSO-d6, 400MHz, ppm): 8.95(d, 2H), 7.18(d, 2H), 7.03(m, 6H), 6.61(d, 4H), 2.59(t, 2H), 2.25(s, 3H), 1.58(m, 2H), 1.30(m, 6H), 0.88(t, 3H) 1 H NMR (DMSO-d 6 , 400MHz, ppm): 8.95(d, 2H), 7.18(d, 2H), 7.03(m, 6H), 6.61(d, 4H), 2.59(t, 2H), 2.25 (s, 3H), 1.58(m, 2H), 1.30(m, 6H), 0.88(t, 3H)
3-2: 4,4'-(((1-(4-헥실페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈로니트릴의 합성3-2: Synthesis of 4,4'-(((1-(4-hexylphenyl)ethane-1,1-diyl)bis(4,1-phenylene))bis(oxy))diphthalonitrile
4,4'-(1-(4-헥실페닐)에탄-1,1-디일)디페놀 30.0 g (0.080 mol), 4-나이트로프탈로니트릴 28.43 g (0.164 mol), 탄산 칼륨 33.21 g (0.240 mol) 그리고 무수-디메틸포름아마이드 200 mL를 반응기에 넣은 후, 질소 분위기에서 교반하였다. 반응기를 120℃로 승온하고 16시간 교반하였다. 반응이 종료되면 교반 중인 증류수에 반응물을 투입하여 침전시키고 여과하였다. 침전물을 에틸 아세테이트에 녹이고 분별깔대기에 증류수와 함께 넣고 추출하여 불순물을 제거한다. 유기층을 분리해서 감압농축하고 에틸아세트와 노말-헥세인으로 재결정하여 정제된 결정을 여과하고 진공건조하였다. 수득률은 93%였다.4,4'-(1-(4-hexylphenyl)ethane-1,1-diyl)diphenol 30.0 g (0.080 mol), 4-nitrophthalonitrile 28.43 g (0.164 mol), potassium carbonate 33.21 g (0.240 mol) mol) Then, 200 mL of anhydrous dimethylformamide was added to the reactor and stirred in a nitrogen atmosphere. The reactor was heated to 120°C and stirred for 16 hours. When the reaction was completed, the reactant was added to stirring distilled water, precipitated, and filtered. Dissolve the precipitate in ethyl acetate, place it in a separatory funnel with distilled water, and extract to remove impurities. The organic layer was separated, concentrated under reduced pressure, recrystallized with ethyl acet and n-hexane, and the purified crystals were filtered and dried in vacuum. The yield rate was 93%.
1H NMR (DMSO-d6, 400MHz, ppm): 8.08(d, 2H), 7.94(s, 2H), 7.58(d, 2H), 7.25(d, 4H), 7.14(m, 6H), 7.04(d, 2H), 2.59(t, 2H), 2.28(s, 3H), 1.58(m, 2H), 1.30(m, 6H), 0.88(t, 3H) 1 H NMR (DMSO-d 6 , 400 MHz, ppm): 8.08 (d, 2H), 7.94 (s, 2H), 7.58 (d, 2H), 7.25 (d, 4H), 7.14 (m, 6H), 7.04 (d, 2H), 2.59(t, 2H), 2.28(s, 3H), 1.58(m, 2H), 1.30(m, 6H), 0.88(t, 3H)
3-3: 4,4'-(((1-(4-헥실페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈로산의 합성3-3: Synthesis of 4,4'-(((1-(4-hexylphenyl)ethane-1,1-diyl)bis(4,1-phenylene))bis(oxy))diphthaloic acid
4,4'-(2,2,2-트리플루오로-1-(4-(트리플루오로메틸)페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈로니트릴 35.0 g (0.056 mol), 수산화 나트륨 89.35 g (0.223 mol), 메탄올 200 mL 그리고 증류수 300 mL를 반응기에 넣은 후 반응기를 100℃로 승온하고 52시간 교반하였다. 반응이 종료되면 가열된 상태의 반응물을 여과하여 고체 불순물을 제거한다. 여액을 0~10℃로 냉각하고 교반하면서 여액 pH 1이 될 때까지 HCl(35%)를 첨가한다. 침전물이 형성되면 여과하고 진공건조하였다. 수득률은 94%였다.4,4'-(2,2,2-trifluoro-1-(4-(trifluoromethyl)phenyl)ethane-1,1-diyl)bis(4,1-phenylene))bis(oxy )) 35.0 g (0.056 mol) of diphthalonitrile, 89.35 g (0.223 mol) of sodium hydroxide, 200 mL of methanol, and 300 mL of distilled water were added to the reactor, then the reactor was heated to 100°C and stirred for 52 hours. When the reaction is completed, the heated reactant is filtered to remove solid impurities. Cool the filtrate to 0~10℃ and add HCl (35%) while stirring until the pH of the filtrate reaches 1. When a precipitate formed, it was filtered and vacuum dried. The yield rate was 94%.
1H NMR (DMSO-d6, 400MHz, ppm): 13.10(s, 4H), 7.87(d, 2H), 7.41(m, 6H), 7.08(m, 10H), 2.59(t, 2H), 2.28(s, 3H), 1.58(m, 2H), 1.30(m, 6H), 0.88(t, 3H) 1 H NMR (DMSO-d 6 , 400 MHz, ppm): 13.10 (s, 4H), 7.87 (d, 2H), 7.41 (m, 6H), 7.08 (m, 10H), 2.59 (t, 2H), 2.28 (s, 3H), 1.58(m, 2H), 1.30(m, 6H), 0.88(t, 3H)
3-4: 4,4'-(((1-(4-헥실페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈로산 무수물의 합성3-4: Synthesis of 4,4'-(((1-(4-hexylphenyl)ethane-1,1-diyl)bis(4,1-phenylene))bis(oxy))diphthaloic anhydride
4,4'-(((1-(4-헥실페닐)에탄-1,1-디일)비스(4,1-페닐렌))비스(옥시))디프탈로산 30.0 g (0.043 mol)과 아세트산 무수물 90 mL을 반응기에 넣은 후 140℃로 승온하고 8시간 교반하였다. 반응이 종료되면 반응기를 상온까지 냉각하였다. 생긴 결정을 여과하고 소량의 아세트산으로 씻어낸 후 진공건조하여 하기 화학식으로 표시되는 최종 화합물(수득률: 87%)을 제조하였다.30.0 g (0.043 mol) of 4,4'-(((1-(4-hexylphenyl)ethane-1,1-diyl)bis(4,1-phenylene))bis(oxy))diphthaloic acid and acetic acid After adding 90 mL of anhydride to the reactor, the temperature was raised to 140°C and stirred for 8 hours. When the reaction was completed, the reactor was cooled to room temperature. The resulting crystals were filtered, washed with a small amount of acetic acid, and dried under vacuum to prepare the final compound (yield: 87%) represented by the following chemical formula.
1H NMR (DMSO-d6, 400MHz, ppm): 7.89(d, 2H), 7.40(m, 6H), 7.07(m, 10H), 2.59(t, 2H), 2.28(s, 3H), 1.58(m, 2H), 1.30(m, 6H), 0.88(t, 3H) 1 H NMR (DMSO-d 6 , 400MHz, ppm): 7.89(d, 2H), 7.40(m, 6H), 7.07(m, 10H), 2.59(t, 2H), 2.28(s, 3H), 1.58 (m, 2H), 1.30(m, 6H), 0.88(t, 3H)
[실시예 1: 폴리이미드 중합체 및 필름 제조] [Example 1: Preparation of polyimide polymer and film]
합성예 1에서 합성된 테트라카복실산 이무수물 단량체를 사용하여 폴리이미드 조성물 및 필름을 제조하였다. A polyimide composition and film were prepared using the tetracarboxylic dianhydride monomer synthesized in Synthesis Example 1.
구체적으로, 테트라카복실산 이무수물 단량체 (합성예 1) 24.97 mmol, ODA 5g (24.97 mmol), 및 아이소퀴놀린 11.47g을 206g의 메타-크레솔에 용해시킨 후 질소 분위기 하에서 70℃에서 2시간, 150℃에서 3시간 동안 교반하였다. 반응이 끝난 후 온도를 상온으로 식히고 점성이 있는 용액을 메탄올에 침전시키고 걸러낸 후 침전물을 물과 메탄올로 수차례 세척하였다. 이후 80℃의 온도에서 감압 건조하여 폴리이미드 중합체를 얻었다. Specifically, 24.97 mmol of tetracarboxylic dianhydride monomer (Synthesis Example 1), 5 g (24.97 mmol) of ODA, and 11.47 g of isoquinoline were dissolved in 206 g of meta-cresol and then incubated at 70°C for 2 hours under a nitrogen atmosphere at 150°C. It was stirred for 3 hours. After the reaction was completed, the temperature was cooled to room temperature, the viscous solution was precipitated in methanol, filtered, and the precipitate was washed several times with water and methanol. Afterwards, it was dried under reduced pressure at a temperature of 80°C to obtain a polyimide polymer.
합성된 폴리이미드 중합체 중 일부를 10 중량%의 DMAc 용액인 폴리이미드 조성물로 만들어 유리판에 도포시킨 후 200℃의 온도 및 진공 조건에서 용매를 제거하여 폴리이미드 필름을 제조하였다.A portion of the synthesized polyimide polymer was made into a polyimide composition that was a 10% by weight DMAc solution, applied to a glass plate, and then the solvent was removed at a temperature of 200°C and under vacuum conditions to prepare a polyimide film.
[실시예 2: 폴리이미드 중합체 및 필름 제조] [Example 2: Polyimide polymer and film production]
합성예 2에서 합성된 테트라카복실산 이무수물 단량체를 사용하여 폴리이미드 조성물 및 필름을 제조하였다. A polyimide composition and film were prepared using the tetracarboxylic dianhydride monomer synthesized in Synthesis Example 2.
구체적으로, 테트라카복실산 이무수물 단량체 (합성예 2) 24.97 mmol, ODA 5g (24.97 mmol), 및 아이소퀴놀린 11.30g을 203g의 메타-크레솔에 용해시킨 후 질소 분위기 하에서 70℃에서 2시간, 150℃에서 3시간 동안 교반하였다. 반응이 끝난 후 온도를 상온으로 식히고 점성이 있는 용액을 메탄올에 침전시키고 걸러낸 후 침전물을 물과 메탄올로 수차례 세척하였다. 이후 80℃의 온도에서 감압 건조하여 폴리이미드 중합체를 얻었다. Specifically, 24.97 mmol of tetracarboxylic dianhydride monomer (Synthesis Example 2), 5 g (24.97 mmol) of ODA, and 11.30 g of isoquinoline were dissolved in 203 g of meta-cresol and then incubated at 70°C for 2 hours and 150°C under a nitrogen atmosphere. It was stirred for 3 hours. After the reaction was completed, the temperature was cooled to room temperature, the viscous solution was precipitated in methanol, filtered, and the precipitate was washed several times with water and methanol. Afterwards, it was dried under reduced pressure at a temperature of 80°C to obtain a polyimide polymer.
합성된 폴리이미드 중합체 중 일부를 10 중량%의 DMAc 용액인 폴리이미드 조성물로 만들어 유리판에 도포시킨 후 200℃의 온도 및 진공 조건에서 용매를 제거하여 폴리이미드 필름을 제조하였다.A portion of the synthesized polyimide polymer was made into a polyimide composition that was a 10% by weight DMAc solution, applied to a glass plate, and then the solvent was removed at a temperature of 200°C and under vacuum conditions to prepare a polyimide film.
[실시예 3: 폴리이미드 중합체 및 필름 제조] [Example 3: Preparation of polyimide polymer and film]
합성예 3에서 합성된 테트라카복실산 이무수물 단량체를 사용하여 폴리이미드 조성물 및 필름을 제조하였다. A polyimide composition and film were prepared using the tetracarboxylic dianhydride monomer synthesized in Synthesis Example 3.
구체적으로, 테트라카복실산 이무수물 단량체 (합성예 3) 24.97 mmol, ODA 5g (24.97 mmol), 및 아이소퀴놀린 10.82g을 195g의 메타-크레솔에 용해시킨 후 질소 분위기 하에서 70℃에서 2시간, 150℃에서 3시간 동안 교반하였다. 반응이 끝난 후 온도를 상온으로 식히고 점성이 있는 용액을 메탄올에 침전시키고 걸러낸 후 침전물을 물과 메탄올로 수차례 세척하였다. 이후 80℃의 온도에서 감압 건조하여 폴리이미드 중합체를 얻었다. Specifically, 24.97 mmol of tetracarboxylic dianhydride monomer (Synthesis Example 3), 5 g (24.97 mmol) of ODA, and 10.82 g of isoquinoline were dissolved in 195 g of meta-cresol and then incubated at 70°C for 2 hours and 150°C under a nitrogen atmosphere. It was stirred for 3 hours. After the reaction was completed, the temperature was cooled to room temperature, the viscous solution was precipitated in methanol, filtered, and the precipitate was washed several times with water and methanol. Afterwards, it was dried under reduced pressure at a temperature of 80°C to obtain a polyimide polymer.
합성된 폴리이미드 중합체 중 일부를 10 중량%의 DMAc 용액인 폴리이미드 조성물로 만들어 유리판에 도포시킨 후 200℃의 온도 및 진공 조건에서 용매를 제거하여 폴리이미드 필름을 제조하였다.A portion of the synthesized polyimide polymer was made into a polyimide composition that was a 10% by weight DMAc solution, applied to a glass plate, and then the solvent was removed at a temperature of 200°C and under vacuum conditions to prepare a polyimide film.
[비교예 1: 폴리아믹산 조성물 및 폴리이미드 필름 제조] [Comparative Example 1: Preparation of polyamic acid composition and polyimide film]
3,3 ,4,4 -Biphenyltetracarboxylic dianhydride(BPDA) 24.97 mmol 및 ODA 5g (24.97 mmol)을 111g의 메타-크레솔에 용해시킨 후 질소 분위기 하에서 반응기 온도를 25℃로 유지한 상태로 2시간 교반하였다. 상기 반응으로부터 고형분 농도 중량10%의 폴리아믹산 조성물 제조하였다. 24.97 mmol of 3,3,4,4-Biphenyltetracarboxylic dianhydride (BPDA) and 5 g (24.97 mmol) of ODA were dissolved in 111 g of meta-cresol and stirred for 2 hours while maintaining the reactor temperature at 25°C under a nitrogen atmosphere. . From the above reaction, a polyamic acid composition with a solid content concentration of 10% by weight was prepared.
상기 폴리아믹산 조성물을 55㎛의 두께로 유리기판에 스핀코팅하였다. 폴리아믹산 조성물이 도포된 유리기판을 오븐에 넣고 5℃/min의 속도로 가열하였으며, 80 ℃에서 30분, 450 ℃에서 1시간을 유지하여 이미드 폐환반응(Imidization)을 진행하였다. 폐환반응 완료 후에, 유리기판을 물에 담구어 유리기판 위에 형성된 필름을 떼어내고 오븐에서 120 ℃로 건조하여, 폴리이미드 필름을 제조하였다.The polyamic acid composition was spin-coated on a glass substrate to a thickness of 55㎛. The glass substrate coated with the polyamic acid composition was placed in an oven and heated at a rate of 5°C/min, and maintained at 80°C for 30 minutes and 450°C for 1 hour to proceed with the imide ring closure reaction (Imidization). After the ring closure reaction was completed, the glass substrate was immersed in water, the film formed on the glass substrate was removed, and it was dried in an oven at 120° C. to prepare a polyimide film.
[비교예 2: 폴리아믹산 조성물 및 폴리이미드 필름 제조] [Comparative Example 2: Preparation of polyamic acid composition and polyimide film]
4,4'-Oxydiphthalic Anhydride(ODPA) 24.97 mmol 및 ODA 5g (24.97 mmol)을 115g의 메타-크레솔에 용해시킨 후 질소 분위기 하에서 반응기 온도를 25℃로 유지한 상태로 2시간 교반하였다. 상기 반응으로부터 고형분 농도 중량10%의 폴리아믹산 조성물 제조하였다. 24.97 mmol of 4,4'-Oxydiphthalic Anhydride (ODPA) and 5 g (24.97 mmol) of ODA were dissolved in 115 g of meta-cresol and stirred for 2 hours while maintaining the reactor temperature at 25°C under a nitrogen atmosphere. From the above reaction, a polyamic acid composition with a solid content concentration of 10% by weight was prepared.
상기 폴리아믹산 조성물을 55㎛의 두께로 유리기판에 스핀코팅하였다. 폴리아믹산 조성물이 도포된 유리기판을 오븐에 넣고 5℃/min의 속도로 가열하였으며, 80 ℃에서 30분, 450 ℃에서 1시간을 유지하여 이미드 폐환반응(Imidization)을 진행하였다. 폐환반응 완료 후에, 유리기판을 물에 담구어 유리기판 위에 형성된 필름을 떼어내고 오븐에서 120 ℃로 건조하여, 폴리이미드 필름을 제조하였다.The polyamic acid composition was spin-coated on a glass substrate to a thickness of 55㎛. The glass substrate coated with the polyamic acid composition was placed in an oven and heated at a rate of 5°C/min, and maintained at 80°C for 30 minutes and 450°C for 1 hour to proceed with the imide ring closure reaction (Imidization). After the ring closure reaction was completed, the glass substrate was immersed in water, the film formed on the glass substrate was removed, and it was dried in an oven at 120° C. to prepare a polyimide film.
[비교예 3: 폴리아믹산 조성물 및 폴리이미드 필름 제조] [Comparative Example 3: Preparation of polyamic acid composition and polyimide film]
4,4′-(Hexafluoroisopropylidene)diphthalic anhydride(6FDA) 24.97 mmol 및 ODA 5g (24.97 mmol)을 111g의 메타-크레솔에 용해시킨 후 질소 분위기 하에서 반응기 온도를 25℃로 유지한 상태로 2시간 교반하였다. 상기 반응으로부터 고형분 농도 중량10%의 폴리아믹산 조성물 제조하였다. 24.97 mmol of 4,4′-(Hexafluoroisopropylidene)diphthalic anhydride (6FDA) and 5 g (24.97 mmol) of ODA were dissolved in 111 g of meta-cresol and stirred for 2 hours while maintaining the reactor temperature at 25°C under a nitrogen atmosphere. . From the above reaction, a polyamic acid composition with a solid content concentration of 10% by weight was prepared.
상기 폴리아믹산 조성물을 55㎛의 두께로 유리기판에 스핀코팅하였다. 폴리아믹산 조성물이 도포된 유리기판을 오븐에 넣고 5℃/min의 속도로 가열하였으며, 80 ℃에서 30분, 450 ℃에서 1시간을 유지하여 이미드 폐환반응(Imidization)을 진행하였다. 폐환반응 완료 후에, 유리기판을 물에 담구어 유리기판 위에 형성된 필름을 떼어내고 오븐에서 120 ℃로 건조하여, 폴리이미드 필름을 제조하였다.The polyamic acid composition was spin-coated on a glass substrate to a thickness of 55㎛. The glass substrate coated with the polyamic acid composition was placed in an oven and heated at a rate of 5°C/min, and maintained at 80°C for 30 minutes and 450°C for 1 hour to proceed with the imide ring closure reaction (Imidization). After the ring closure reaction was completed, the glass substrate was immersed in water, the film formed on the glass substrate was removed, and it was dried in an oven at 120° C. to prepare a polyimide film.
[실험예. 물성 평가][Experimental example. Physical property evaluation]
상기 실시예 1~3 및 비교예 1~3에서 제조된 폴리이미드 필름을 하기와 같은 방법으로 물성을 평가하였으며, 그 결과를 하기 표 1에 나타내었다.The physical properties of the polyimide films prepared in Examples 1 to 3 and Comparative Examples 1 to 3 were evaluated in the following manner, and the results are shown in Table 1 below.
(1) 용해도(폴리이미드)(1) Solubility (polyimide)
온도를 20℃로 유지하면서 교반중인 용매 100g에 샘플을 소량씩 적하하면서 더 이상 녹지 않을 때까지 투입하고 23시간 방치하였다. 하기 식 1에 따라 용해도를 측정하였다.While maintaining the temperature at 20°C, a small amount of the sample was added dropwise to 100 g of the solvent being stirred until it no longer dissolved and left for 23 hours. Solubility was measured according to Equation 1 below.
[식 1][Equation 1]
용해도 (%) = 녹은 샘플양(g)/용매(100g) ×100Solubility (%) = dissolved sample amount (g)/solvent (100g) ×100
(2) 필름 두께(2) Film thickness
두께 측정 장치(KG601B Electric Micro meter (Anritsu))를 사용하여 필름의 두께를 측정하였다.The thickness of the film was measured using a thickness measuring device (KG601B Electric Micro meter (Anritsu)).
(3) 내열성(3) Heat resistance
질소 분위기 하에서 열중량분석기(TGA)를 이용하여 측정하였으며, 이때 내열성 측정범위는 25 ~ 700℃로 하고, 승온 속도는 10℃/min로 하였다. 대기 중에서 흡수된 수분을 제거하기 위해, 105℃에서 30분간 항온시킨 후 해당 무게를 100%로 산정하고 무게 대비 5% 중량 손실이 일어나는 온도(Td, 5%)를 측정하였다.Measurements were made using a thermogravimetric analyzer (TGA) under a nitrogen atmosphere. At this time, the heat resistance measurement range was 25 to 700°C, and the temperature increase rate was 10°C/min. To remove moisture absorbed from the atmosphere, the weight was calculated as 100% after constant temperature at 105°C for 30 minutes, and the temperature at which 5% weight loss occurs (Td, 5%) was measured.
(4) 유전율(4) Dielectric constant
시편의 크기는 5×5 cm 이상이고, 시편의 두께는 50㎛로 준비하였다. 공진기 안에 각 시편을 투입하고 상온/상압 상태에서 측정하였다.The size of the specimen was 5 × 5 cm or more, and the thickness of the specimen was 50㎛. Each specimen was placed into the resonator and measured at room temperature/pressure.
(5) 유전손실(5) Dielectric loss
시편의 크기는 5×5 cm 이상이고, 시편의 두께는 50㎛로 준비하였다. 공진기 안에 각 시편을 넣고, 상온/상압 상태에서 측정하였다.The size of the specimen was 5 × 5 cm or more, and the thickness of the specimen was 50㎛. Each specimen was placed in the resonator and measured at room temperature/pressure.
(6) 흡습율(6) Moisture absorption rate
제조된 폴리이미드 필름을 10 x 10 mm 크기의 시편으로 제작한 후 초기 무게(W1)를 측정하였다. 이어서 각 시편을 온도 25±2℃, 상대습도 30% 조건 하에서 정제수 bath에 24시간 동안 방치하여 흡습 처리한 후, 해당 시편을 꺼내어 헝겊으로 닦아내고 흡습처리 후 무게(W2)를 측정하였다. 측정된 수치를 하기 식 2에 대입하여 흡습율을 산출하였다.The prepared polyimide film was made into a specimen with a size of 10 x 10 mm, and the initial weight (W1) was measured. Next, each specimen was left in a purified water bath for 24 hours under the conditions of temperature 25 ± 2℃ and relative humidity 30% to absorb moisture. Then, the specimen was taken out, wiped with a cloth, and the weight (W2) was measured after moisture absorption treatment. The moisture absorption rate was calculated by substituting the measured values into Equation 2 below.
[식 2][Equation 2]
흡습율 (%) = [(W2-W1)/W1] ×100Moisture absorption rate (%) = [(W2-W1)/W1] ×100
(㎛)thickness
(㎛)
(%)moisture absorption rate
(%)
(Dk)permittivity
(Dk)
(Df)oil field loss
(Df)
상기 표 1에 나타난 바와 같이, 본 발명에 따른 신규 테트라카복실산 이무수물 단량체를 포함하는 폴리이미드 필름은 저유전율, 저흡습율을 나타냄에 따라 가공성 및 내열성이 우수한 필름을 제조할 수 있다는 것을 알 수 있었다.As shown in Table 1, it was found that the polyimide film containing the novel tetracarboxylic dianhydride monomer according to the present invention exhibits low dielectric constant and low moisture absorption, making it possible to produce a film with excellent processability and heat resistance. .
Claims (13)
[화학식 1]
R1 내지 R3는 서로 동일하거나 또는 상이하며, 각각 독립적으로 수소, 할로겐, C1~C20의 알킬기, C1~C20의 알킬옥시기, C3~C10의 시클로알킬기, C6~C20의 아릴기, C6~C20의 아릴옥시기, 핵원자수 5 내지 20의 복소환기, 및 -(CF2)n-CF3 (여기서, n은 0 내지 5 사이의 정수임)로 구성되는 군으로부터 선택되고,
R4는 수소, C1~C20의 알킬기, C3~C10의 시클로알킬기, C6~C20의 아릴기, 및 트라이플루오로메틸기로 선택되고,
R5 및 R6은 각각 독립적으로 C1~C20의 알킬기이며,
a와 b는 각각 독립적으로 0 내지 4의 정수이다. Compound for forming polyamic acid or polyimide represented by the following formula (1):
[Formula 1]
R 1 to R 3 are the same or different from each other, and are each independently hydrogen, halogen, C 1 to C 20 alkyl group, C 1 to C 20 alkyloxy group, C 3 to C 10 cycloalkyl group, C 6 to Consists of an aryl group of C 20 , an aryloxy group of C 6 ~ C 20 , a heterocyclic group of 5 to 20 nuclear atoms, and -(CF 2 ) n -CF 3 (where n is an integer between 0 and 5) selected from the group that is,
R 4 is selected from hydrogen, a C 1 to C 20 alkyl group, a C 3 to C 10 cycloalkyl group, a C 6 to C 20 aryl group, and a trifluoromethyl group,
R 5 and R 6 are each independently an alkyl group of C 1 to C 20 ,
a and b are each independently integers from 0 to 4.
상기 화학식 1의 화합물은 하기 화학식 2 내지 화학식 6 중 어느 하나로 표시되는 화합물:
[화학식 2]
[화학식 3]
[화학식 4]
[화학식 5]
[화학식 6]
상기 식에서,
R1 내지 R4는 각각 제1항에서 정의된 바와 같으며, 다만 수소는 제외된다. According to paragraph 1,
The compound of Formula 1 is a compound represented by any one of the following Formulas 2 to 6:
[Formula 2]
[Formula 3]
[Formula 4]
[Formula 5]
[Formula 6]
In the above equation,
R 1 to R 4 are each as defined in clause 1, except hydrogen.
R1 내지 R3는 서로 동일하거나 또는 상이하며, 각각 독립적으로 수소, C1~C10의 알킬기, C1~C10의 알킬옥시기, C3~C10의 시클로알킬기, C6~C12의 아릴기, 및 C6~C12의 아릴옥시기로 구성된 군에서 선택되고,
R4는 C1~C10의 알킬기, 및 트라이플루오로메틸기로 구성된 군에서 선택되는, 화합물.According to paragraph 1,
R 1 to R 3 are the same or different from each other, and each independently represents hydrogen, a C 1 to C 10 alkyl group, a C 1 to C 10 alkyloxy group, a C 3 to C 10 cycloalkyl group, and C 6 to C 12 is selected from the group consisting of an aryl group, and an aryloxy group of C 6 to C 12 ,
R 4 is a compound selected from the group consisting of a C 1 to C 10 alkyl group, and a trifluoromethyl group.
The compound represented by Formula 1 is a compound selected from the group of compounds represented by the following formula.
디아민;
을 포함하는 폴리아믹산 조성물.Tetracarboxylic dianhydride containing the compound of formula 1 according to any one of claims 1 to 4; and
diamine;
A polyamic acid composition containing.
상기 화학식 1 로 표시되는 화합물은 전체 테트라카복실산 이무수물 100 몰%를 기준으로 1 내지 100 몰% 범위로 포함되는, 폴리아믹산 조성물.According to clause 5,
A polyamic acid composition in which the compound represented by Formula 1 is contained in the range of 1 to 100 mol% based on 100 mol% of the total tetracarboxylic dianhydride.
상기 디아민은 불소화 방향족 제1디아민; 설폰계 방향족 제2디아민, 히드록시계 방향족 제3디아민, 에테르계 방향족 제4디아민 및 지환족 제5디아민으로 구성된 군으로부터 선택되는 1종 이상을 포함하는 폴리아믹산 조성물. According to clause 5,
The diamine is a fluorinated aromatic primary diamine; A polyamic acid composition comprising at least one member selected from the group consisting of sulfone-based aromatic secondary diamine, hydroxy-based aromatic tertiary diamine, ether-based aromatic quaternary diamine, and cycloaliphatic fifth diamine.
상기 폴리아믹산은 하기 화학식 7 내지 화학식 9 중 어느 하나로 표시되는 반복단위를 포함하는, 폴리아믹산:
[화학식 7]
[화학식 8]
[화학식 9]
상기 식에서,
상기 화학식 7의 A; 상기 화학식 8의 A1 및 A2 중 적어도 하나; 상기 화학식 9의 A3 내지 A5 중 적어도 하나;는 화학식 1의 화합물에서 유래된 기이며,
상기 B는 디아민에서 유래된 기이며,
상기 화학식 8에서 x 및 y는 x+y=1을 만족하는 유리수이고,
상기 화학식 9에서 x, y, 및 z는 x + y + z = 1, 0 < y + z ≤ 0.7, 및 0.3 ≤ x + y < 1을 만족하는 유리수이다. According to clause 8,
The polyamic acid includes a repeating unit represented by any one of the following formulas 7 to 9:
[Formula 7]
[Formula 8]
[Formula 9]
In the above equation,
A of Formula 7; At least one of A 1 and A 2 of Formula 8; At least one of A 3 to A 5 of Formula 9 is a group derived from the compound of Formula 1,
The B is a group derived from diamine,
In Formula 8, x and y are rational numbers that satisfy x+y=1,
In Formula 9, x, y, and z are rational numbers that satisfy x + y + z = 1, 0 < y + z ≤ 0.7, and 0.3 ≤ x + y < 1.
상기 폴리이미드 중합체는 하기 화학식 10 내지 화학식 12 중 어느 하나로 표시되는 반복단위를 포함하는, 폴리이미드 중합체.
[화학식 10]
[화학식 11]
[화학식 12]
상기 식에서,
상기 화학식 10의 A; 상기 화학식 11의 A1 및 A2 중 적어도 하나; 상기 화학식 12의 A3 내지 A5 중 적어도 하나;는 화학식 1의 화합물에서 유래된 기이며,
상기 B는 디아민에서 유래된 기이며,
상기 화학식 11에서 x 및 y는 x+y=1을 만족하는 유리수이고,
상기 화학식 12에서 x, y, 및 z는 x + y + z = 1, 0 < y + z ≤ 0.7, 및 0.3 ≤ x + y < 1을 만족하는 유리수이다. According to clause 10,
The polyimide polymer includes a repeating unit represented by any one of the following formulas 10 to 12.
[Formula 10]
[Formula 11]
[Formula 12]
In the above equation,
A of Formula 10; At least one of A 1 and A 2 of Formula 11; At least one of A 3 to A 5 of Formula 12 is a group derived from the compound of Formula 1,
The B is a group derived from diamine,
In Formula 11, x and y are rational numbers that satisfy x+y=1,
In Formula 12, x, y, and z are rational numbers that satisfy x + y + z = 1, 0 < y + z ≤ 0.7, and 0.3 ≤ x + y < 1.
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