KR20240051398A - Display Panel and manufacturing of display panel - Google Patents

Abstract

The present invention relates to a substrate, a first electrode disposed on the substrate, a pixel definition layer disposed on the first electrode and having an opening defined to expose at least a portion of the first electrode, and a micro light emitting layer coupled to the first electrode. A display panel is provided, including an element and a reflector disposed on the first electrode and covering at least a portion of a side surface of the micro light emitting element.

Description

Display panel and manufacturing method thereof {Display Panel and manufacturing of display panel}

Embodiments of the present invention relate to a display panel for improving light efficiency and a method of manufacturing the same.

LCD (Liquid crystal display) and OLED (Organic light emitting diode) are widely used as display devices. Recently, technology for manufacturing high-resolution display devices using micro LEDs (micro light emitting diodes) has been in the spotlight. In order to manufacture such high-resolution display devices, a method of combining high-efficiency micro LEDs manufactured in the form of ultra-small chips to electrodes is used. Research is underway to improve light efficiency in micro LED (micro light emitting diode) display devices.

In the past, a micro LED (Micro Light emitting diode) display device had a problem with low light efficiency emitted from the micro LED (Micro Light emitting diode).

The purpose of the present invention is to provide a display panel with high light efficiency by increasing the reflectance of light emitted by a micro light emitting diode (Micro LED) display panel and a method of manufacturing the same.

However, these tasks are illustrative and do not limit the scope of the present invention.

According to one aspect of the present invention, a substrate, a first electrode disposed on the substrate, a pixel definition layer disposed on the first electrode and defined with an opening exposing at least a portion of the first electrode, and the first electrode. A display panel is provided, including a micro light emitting device coupled to a reflector disposed on the first electrode and covering at least a portion of a side surface of the micro light emitting device.

According to this embodiment, the reflector may have a first reflectance, and the first electrode may have a second reflectance that is lower than the first reflectance.

According to this embodiment, the reflector may be placed directly on the upper surface of the first electrode.

According to this embodiment, the reflector may include a first metal.

According to this embodiment, the first metal may include silver, aluminum, or a compound thereof.

According to this embodiment, the reflector may include a conductive oxide.

According to this embodiment, the reflector may include a combination film of a first metal and a conductive oxide.

According to this embodiment, the length of the portion where the reflector and the side of the micro light emitting device contact each other may be 0.1 μm to 5 μm.

According to this embodiment, the first electrode and the micro light emitting device may be combined by eutectic bonding.

According to this embodiment, the first electrode may include a second metal different from the first metal.

According to this embodiment, the second metal may include copper, tin, gold, or compounds thereof.

According to this embodiment, it may further include a black matrix disposed on the pixel defining layer, a portion of the pixel defining layer, and an insulating layer disposed on the reflector.

According to this embodiment, the insulating film may fill between the micro light emitting device and the black matrix.

According to this embodiment, it may further include a second electrode disposed on the insulating film and the micro light emitting device.

According to this embodiment, the second electrode may be disposed on the black matrix.

According to this embodiment, the second electrode may be disposed between the pixel defining layer and the black matrix.

According to another aspect of the present invention,

According to this embodiment, forming a first electrode on a substrate, forming a pixel definition film on the first electrode with an opening defined to expose at least a portion of the first electrode, and forming a pixel definition film on the first electrode with a micro Combining a light emitting device, covering the pixel definition film, the first electrode, and the micro light emitting device with a material for forming a reflector, the micro light emitting device is connected, and the material for forming a reflector is covered with the material for forming the reflector. Manufacturing a display panel comprising filling the opening of the pixel defining film with an organic film or photoresist layer, etching and removing the exposed portion of the reflector forming material, and removing the organic film or photoresist layer. A method is provided.

According to this embodiment, the method may include forming an insulating layer on the pixel defining layer and the reflector and forming a second electrode on the insulating layer.

According to this embodiment, the method may further include forming a black matrix on the pixel defining layer and forming the second electrode on the black matrix.

According to this embodiment, the method may further include forming the second electrode on the pixel defining layer and forming a black matrix on the second electrode.

The display panel and its manufacturing method according to embodiments of the present invention can improve the light efficiency of the display panel. However, this effect is illustrative, and the effects according to the embodiments will be described in detail later.

Figure 1 schematically shows a top view of a display panel according to an embodiment of the present invention.
FIGS. 2A and 2B schematically show a cross-sectional view of a display panel according to an embodiment of the present invention as seen along line Ι-Ι' of FIG. 1.
Figure 3 schematically shows a cross-sectional view of a display panel according to an embodiment of the present invention.
4 to 13 schematically show a method of manufacturing a display panel according to an embodiment of the present invention as a cross-sectional view of the display panel.
14 to 20 are cross-sectional views schematically showing a method of manufacturing a display panel according to another embodiment of the present invention.

Since the present invention can be modified in various ways and can have various embodiments, specific embodiments will be illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. When describing with reference to the drawings, identical or corresponding components will be assigned the same reference numerals and redundant description thereof will be omitted. .

In the following embodiments, terms such as first and second are used not in a limiting sense but for the purpose of distinguishing one component from another component.

In the following examples, singular terms include plural terms unless the context clearly dictates otherwise.

In the following embodiments, terms such as include or have mean the presence of features or components described in the specification, and do not exclude in advance the possibility of adding one or more other features or components.

In the following embodiments, when a part of a film, region, component, etc. is said to be on or on another part, it is not only the case where it is directly on top of the other part, but also when another film, region, component, etc. is interposed between them. Also includes cases where there are.

In the drawings, the sizes of components may be exaggerated or reduced for convenience of explanation. For example, the size and thickness of each component shown in the drawings are shown arbitrarily for convenience of explanation, so the present invention is not necessarily limited to what is shown.

If an embodiment can be implemented differently, a specific process sequence may be performed differently from the described sequence. For example, two processes described in succession may be performed substantially at the same time, or may be performed in an order opposite to that in which they are described.

In this specification, “A and/or B” refers to A, B, or A and B. And, “at least one of A and B” indicates the case of A, B, or A and B.

In the following embodiments, when membranes, regions, components, etc. are said to be connected, if the membranes, regions, and components are directly connected, or/and other membranes, regions, and components are in the middle of the membranes, regions, and components. This also includes cases where they are interposed and indirectly connected. For example, in this specification, when membranes, regions, components, etc. are said to be electrically connected, when the membranes, regions, components, etc. are directly electrically connected, and/or other membranes, regions, components, etc. are interposed. indicates a case of indirect electrical connection.

The x-axis, y-axis, and z-axis are not limited to the three axes in the Cartesian coordinate system and can be interpreted in a broad sense including these. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may also refer to different directions that are not orthogonal to each other.

Figure 1 schematically shows a top view of the display panel 10 according to an embodiment of the present invention.

Referring to FIG. 1 , the display panel 10 may include a plurality of unit pixels 150 . In Figure 1, nine unit pixels 150 are shown for convenience. Here, in order for the display device to implement a color image, each of the plurality of unit pixels 150 may include pixels 151, 152, and 153 of different colors. For example, each of the unit pixels 150 may include a first pixel 151, a second pixel 152, and a third pixel 153 of different colors. As a specific example, the first pixel 151, the second pixel 152, and the third pixel 153 may be blue, green, and red pixels. However, the present invention is not limited to this.

FIGS. 2A and 2B schematically show a cross-sectional view of a display panel according to an embodiment of the present invention as seen along line Ι-Ι' of FIG. 1.

Referring to FIG. 2A, a first electrode 211, a pixel defining film 118, a reflector 140, a black matrix 119, an insulating layer 121, and micro light emitting devices 130 are placed on the substrate 100. and a second electrode 213 may be disposed. In other words, the display panel 10 includes a substrate 100, a first electrode 211, a pixel defining film 118, a reflector 140, a black matrix 119, an insulating layer 121, and micro light emitting elements ( 130), and a second electrode 213.

In one embodiment, the pixel circuit layer 120 may be disposed on the substrate 100. The pixel circuit layer 120 may be a layer that includes a circuit that drives the plurality of pixels 150 to emit light. The pixel circuit layer 120 includes a semiconductor layer (Act, see FIG. 3), an organic insulating layer (OIL, see FIG. 3), an inorganic insulating layer (IIL, see FIG. 3), and a gate electrode (GE, see FIG. 3). It can be included. In other words, a pixel circuit layer 120 including a semiconductor layer (Act), an organic insulating layer (OIL), an inorganic insulating layer (IIL), and a gate electrode (Gate) may be disposed on the substrate 100. The pixel circuit layer 120 will be described in more detail later.

In one embodiment, the first electrodes 211 may be disposed on the pixel circuit layer 120 to be spaced apart from each other. Micro light emitting elements 130 may be coupled (or connected) to the first electrode 211. Methods for combining (or connecting) the micro light emitting devices 130 to the first electrode 211 may include eutectic bonding, soldering, and ACF (Anisotropic Conductive Film) bonding methods. Eutectic bonding may be a technology that bonds wafers or chips at low temperatures using a metal thin film with low fusion properties. Soldering may be a method of joining two dissimilar materials by melting a low-melting point insert metal at a temperature of 450°C or lower. ACF (Anisotropic Conductive Film) bonding may be a bonding method that uses an anisotropic conductive film to allow electricity to pass up and down and to insulate left and right.

In one embodiment, considering the resolution of the panel and the processing temperature of the panel materials, eutectic bonding is a method of bonding (or connecting) the micro light emitting device 130 to the first electrode 211. This may be the most advantageous. The micro light emitting devices 130 may be in the form of a chip. In order for the micro light emitting devices 130 and the first electrode 211 to be combined (or connected) by eutectic bonding, the first electrode must be used. (211) may be a common metal with a high temperature of 300 degrees or more. Specifically, considering material cost and fairness, metal such as copper (Cu), tin (Sn), or gold (Au) can be used as the first electrode 211. However, metals such as copper (Cu), tin (Sn), or gold (Au) have low reflectivity, which may reduce the emission rate of light generated from the micro light-emitting devices 130. In other words, the light efficiency generated from the micro light emitting devices 130 may be lowered. In order to increase light efficiency, a reflector 140 containing a metal with a higher reflectivity than the first electrode 211 may be disposed on the display panel, which will be described in more detail later.

The micro light emitting device 130 may be bonded (or bonded) to the first electrode 211 through eutectic bonding. In other words, the first electrode 211 can function as a connection layer. The first electrode 211 may include a metal different from the metal forming the reflector 140. The reflector 140 may be made of a first metal, and the first electrode 211 may be made of a second metal that is different from the first metal. The second metal forming the first electrode 211 may include copper (Cu), tin (Sn), or gold (Au). Specifically, the first electrode 211 may be made of a single layer of copper (Cu), tin (Sn), or gold (Au). Additionally, the first electrode 211 may include a compound of copper (Cu), tin (Sn), or gold (Au). Additionally, the first electrode 211 may include a combination film structure in which multiple layers of a layer made of copper (Cu), a layer made of tin (Sn), or a layer made of gold (Au) are stacked. However, the present invention is not limited to this.

In one embodiment, a pixel defining layer 118 having an opening 118OP exposing at least a portion of the first electrode 211 may be disposed on the first electrode 211 . At least a portion of the first electrode 211 may be exposed through the opening 118OP. In other words, at least a portion of the first electrode 211 may be exposed through the first opening 118OP1, the second opening 118OP2, and the third opening 118OP3 of the pixel defining layer 118, respectively. An emission area of light emitted from the micro light emitting device 130 may be defined by an opening defined in the pixel definition film 118. In other words, the width of the aperture may correspond to the width of the light emitting area.

The pixel defining layer 118 may include an organic insulating material. Alternatively, the pixel definition layer 118 may include an inorganic insulating material such as silicon nitride, silicon oxynitride, or silicon oxide. Alternatively, the pixel defining layer 118 may include an organic insulating material and an inorganic insulating material. In one embodiment, the pixel defining layer 118 may include a light blocking material. The light blocking material may be carbon black, carbon nanotubes, a resin or paste containing black dye, metal particles such as nickel, aluminum, molybdenum, and alloys thereof, metal oxide particles (e.g. chromium oxide), or metal nitride particles (e.g. , chromium nitride), etc. When the pixel defining layer 118 includes a light blocking material, reflection of external light by metal structures disposed below the pixel defining layer 118 can be reduced.

In one embodiment, micro light emitting devices 130 may be disposed within the openings 118OP1, 118OP2, and 118OP3 of the pixel defining layer 118, respectively. The micro light emitting devices 130 may be spaced apart from the pixel defining layer 118 and may be disposed within the openings 118OP defined in the pixel defining layer 118 . The micro light emitting devices 130 may be coupled (or connected) to the first electrode 211 at least partially exposed by the openings 118OP of the pixel defining layer 118. In other words, the first micro light emitting device 131 may be disposed on the first electrode 211 that is at least partially exposed by the first opening 118OP1 of the pixel defining layer 118. Additionally, the second micro light emitting device 132 may be disposed on the first electrode 211 that is at least partially exposed by the second opening 118OP2 of the pixel defining layer 118. Additionally, the third micro light emitting device 133 may be disposed on the first electrode 211 that is at least partially exposed by the third opening 118OP3 of the pixel defining layer 118. The first micro light emitting device 131, the second micro light emitting device 132, and the third micro light emitting device 133 are respectively connected to the first pixel 151, the second pixel 152, and the third pixel 153. can be responded to.

In one embodiment, each of the micro light emitting elements 130 bonded (or connected) to the first electrode 211 by eutectic bonding is a light emitting diode that emits light of a specific color and is a micro-sized ultra-small chip. It can be manufactured in any shape. The micro light emitting devices 130 may each emit light in different wavelength bands. Each of these micro light emitting elements 130 can constitute one pixel in a display device. The first micro light emitting device 131 may emit light of a color corresponding to the first pixel 151. For example, the first micro light emitting device 131 may emit blue light. The second micro light emitting device 132 may emit light of a color corresponding to the second pixel 152. For example, the second micro light emitting device 132 may emit green light. Additionally, the third micro light emitting device 133 may emit light of a color corresponding to the third pixel 153. For example, the third micro light emitting device 133 may emit red light.

In one embodiment, along at least a portion of the inner surface of the pixel defining film 118 forming the opening 118OP of the pixel defining film 118, the top surface of the first electrode 211, and the side surface of the micro light emitting device 130. The reflector 140 may be covered. The reflector 140 is located on the inner surface of the pixel defining film 118 forming the opening 118OP of the pixel defining film 118 and the first electrode 211 exposed by the opening 118OP of the pixel defining film 118. It may be continuously arranged along at least a portion of the top surface and the side of the micro light emitting device 130. In other words, the lower surface of the micro light emitting device 130 is coupled (or connected) to the first electrode 211, and a reflector 140 may be surrounded along the lower side of the micro light emitting device 130. .

In order for the micro light emitting device 130 to be bonded (or connected) to the first electrode 211 by eutectic bonding, the first electrode 211 is made of copper (Cu), tin (Sn), or gold. It may be made of metal such as (Au). Metals such as copper (Cu), tin (Sn), or gold (Au) are metals with low reflectivity, and the first electrode 211 is made of a metal such as copper (Cu), tin (Sn), or gold (Au). As the reflectance of light from the ground decreases, the emission rate (or light efficiency) of light generated from the micro light emitting device 130 may decrease. A reflector 140 may be disposed on the display panel 10 to increase the emission rate (or light efficiency) of light generated from the micro light emitting device 130. By additionally placing a reflector 140 on the display panel 10, the reflectance of light emitted downward (e.g., toward the first electrode 211) among the light generated from the micro light emitting device 130 is improved, thereby improving light efficiency. Power consumption can be improved. Specifically, before the reflector 140 is disposed, the reflectance of blue light is 30-40%, but after the reflector 140 is disposed, the reflectance of blue light can be improved to 90% or more.

In one embodiment, the contact length (L) between the micro light emitting device 130 and the reflector 140 may be 0.1 μm or more and 5 μm or less. The length (L) of the reflector 140 that covers at least a portion of the side surface of the micro light emitting device 130 may be 0.1 μm or more and 5 μm or less. In other words, the reflector 140 may surround the micro light emitting device 130 along the lower side of the micro light emitting device 130 to a height of 0.1 μm or more and 5 μm or less. When the contact length (L) between the micro light emitting device 130 and the reflector 140 is less than 0.1㎛, the reflector 140 is not sufficiently secured in the display panel 10, so the reflectance of light generated from the micro light emitting device 130 is lowered. It may be low and luminous efficiency may not be improved. Additionally, the height (eg, length in the y-axis direction) of the micro light emitting device 130 may be 5 μm to 7 μm. The length (L) at which the side surfaces of the reflector 140 and the micro light emitting device 130 contact each other may be determined according to the height (eg, the length in the y-axis direction) of the micro light emitting device 130. In order to cover at least a portion of the side of the micro light emitting device 130, the contact length between the reflector 140 and the micro light emitting device 130 may exceed the height of the micro light emitting device 130 (e.g., 5 μm to 7 μm). does not exist. In order to secure the reflectivity of the light generated from the micro light emitting device 130 and to ensure that the reflector 140 is in contact with at least a portion of the side of the micro light emitting device 130, the contact length between the micro light emitting device 130 and the reflector 140 is 0.1. It may be ㎛ or more and 5 ㎛ or less. However, the present invention is not limited to this.

The reflector 140 may be made of a first metal. The first metal may include at least one of silver (Ag) and aluminum (Al). The reflectance of the first metal may be greater than the reflectance of the second metal forming the first electrode 211. That is, the reflector 140 may be made of a metal with a higher reflectivity than the first electrode 211. For example, the reflector 140 may be made of a single layer of silver (Ag), aluminum (Al), or conductive oxide (eg, ITO). Alternatively, the reflector 140 may be provided as an alloy film containing a compound of silver (Ag), aluminum (Al), or a conductive oxide (eg, indium tin oxide (ITO)). In addition, the reflector 140 is a combination film having a structure in which a layer made of silver (Ag), a layer made of aluminum (Al), or a layer made of a conductive oxide (e.g., indium tin oxide (ITO)) are stacked in multiple layers. It can be included. However, the present invention is not limited to this.

In one embodiment, a black matrix 119 may be disposed on the pixel defining layer 118. The black matrix 119 can distinguish areas of pixels. The black matrix 119 can prevent light incident from the outside from being reflected. Additionally, the black matrix 119 can improve the visibility of the display device by absorbing light incident from the outside. The black matrix 119 can prevent light from leaking between a plurality of pixels. In other words, the black matrix 119 can absorb the light emitted by the micro light emitting devices 130 and prevent the lights generated from the micro light emitting devices 130 disposed in each of the plurality of pixels from mixing with each other.

In one embodiment, an insulating layer 121 may be disposed on the pixel defining layer 118 and the reflector 140. The insulating layer 121 may be filled between the black matrix 119 and the micro light emitting device 130. In other words, the insulating layer 121 surrounds the side of the micro light emitting device 130 and may be disposed on the pixel definition film 118 and the reflector 140. The insulating layer 121 may be made of an organic material. The insulating layer 121 is made of general-purpose polymers such as polymethylmethacrylate (PMMA) or polystyrene (PS), polymer derivatives with phenolic groups, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, fluorine polymers, p- It may include organic insulating materials such as xylene-based polymers, vinyl alcohol-based polymers, and blends thereof. However, the present invention is not limited to this.

In one embodiment, the second electrode 213 is formed entirely on the black matrix 119, the insulating layer 121, and the micro light emitting elements 130. The second electrode 213 may be continuously covered on the black matrix 119, the insulating layer 121, and the micro light emitting elements 130. The second electrode 213 may be made of a conductive material with a low work function. For example, the second electrode 213 is made of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), and iridium. It may include a (semi) transparent layer containing (Ir), chromium (Cr), lithium (Li), calcium (Ca), or an alloy thereof. Alternatively, the second electrode 213 may further include a layer such as ITO, IZO, ZnO, or In2O3 on the (semi) transparent layer containing the above-mentioned material.

Figure 2b schematically shows a cross-sectional view of the display panel 10 according to another embodiment of the present invention. Referring to FIG. 2B, the structure formed up to the reflector 140 is common to the display panel 10 according to an embodiment of the present invention of FIG. 2A, but includes an insulating layer 121, a second electrode 213, and a black matrix ( The order in which 119) is arranged or the stacking structure may be different from the display panel 10 according to an embodiment of the present invention shown in FIG. 2A.

Referring to FIG. 2B, an insulating layer 121 may be disposed on the pixel defining layer 118 and the reflector 140. The insulating layer 121 may be disposed on the pixel definition film 118 except for the portion where the black matrix 119 is to be disposed and on the reflector 140. The insulating layer 121 may be filled between the black matrix 119 and the micro light emitting device 130 with the second electrode 213 interposed therebetween. In other words, the insulating layer 121 surrounds the side of the micro light emitting device 130 and may be disposed on the pixel definition film 118 and the reflector 140.

In one embodiment, after the insulating layer 121 is disposed, along the top and side surfaces of the pixel definition film 118, the insulating layer 121, and the micro light emitting device 130 on which the insulating layer 121 is not disposed. The second electrode 213 may be disposed continuously. Specifically, the second electrode 213 may continuously cover the top surface of the pixel definition film 118, the side and top surface of the insulating layer 121, and some side and top surfaces of the micro light emitting device 130.

In one embodiment, after the second electrode 213 is continuously disposed, the black matrix 119 may be disposed on the pixel definition layer 118. The second electrode 213 and the black matrix 119 may be sequentially disposed on the pixel definition layer 118. In other words, the second electrode 213 may be disposed along at least a portion of the bottom and side surfaces of the black matrix 119.

Figure 3 schematically shows a cross-sectional view of the display panel 10 according to an embodiment of the present invention. Specifically, FIG. 3 is a cross-sectional view of the display panel 10 viewed along line II-II' in FIG. 2. FIG. 3 shows a cross-sectional view of the first pixel 151 among the plurality of unit pixels 150, and the micro light-emitting device shown in FIG. 3 may be the first micro light-emitting device 131. Let's look at the pixel circuit layer 120 of the display panel 10 in detail with reference to FIG. 3.

Referring to FIG. 3, the display panel 10 includes a substrate 100, a pixel circuit layer 120 including an inorganic insulating layer (IIL), an organic insulating layer (OIL), a first electrode 211, and a connection electrode. (CM), data line (DL), first micro light emitting element 131, pixel defining film 118, black matrix 119, reflector 140, insulating layer 121, and second electrode 213. It can be included. In other words, on the substrate 100 of the display panel 10, there is a pixel circuit layer 120, a connection electrode (CM), a data line (DL), a first micro light emitting device 131, a pixel defining layer 118, and a black A matrix 119, a reflector 140, an insulating layer 121, and a second electrode 213 may be disposed.

In one embodiment, the substrate 100 may be made of glass, metal, or polymer resin. When the substrate 100 is made of a polymer resin, the substrate 100 is made of polyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate, or polyethylene terephthalate. It may include polymer resins such as polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate, cellulose triacetate, cellulose acetate propionate, etc.

Although not shown, the substrate 100 may include a first base layer, a first barrier layer, a second base layer, and a second barrier layer. In one embodiment, the first base layer, the first barrier layer, the second base layer, and the second barrier layer may be sequentially stacked in the thickness direction of the substrate 100.

The first barrier layer and the _second barrier layer are barrier layers that prevent the penetration of external foreign substances, and contain inorganic materials such as silicon nitride ( _SiN It may be single layer or multilayer.

A buffer layer 111 may be disposed on the substrate 100. The buffer layer 111 may include an inorganic insulating material such as silicon nitride _{( SiN}

The inorganic insulating layer (IIL) may be disposed on the buffer layer 111. The inorganic insulating layer (IIL) may include a first gate insulating layer 112, a second gate insulating layer 113, and an interlayer insulating layer 114.

Figure 3 shows three thin film transistors (T1, T2, T3). The display panel 10 according to an embodiment of the present invention may include a first thin film transistor (T1), a second thin film transistor (T2), or a third thin film transistor (T3). The plurality of transistors T1, T2, and T3 may function as switching transistors or driving transistors in the pixel circuit. However, the present invention is not limited to this.

The first thin film transistor T1 may be provided with a first semiconductor layer AS1 and a first gate electrode G1. The first semiconductor layer AS1 may include a first source region S1, a first channel region A1, and a first drain region D1. A first gate electrode (G1) may be disposed on the first semiconductor layer (AS1). The first source region (S1) may be connected to the first source electrode (SE1) on the interlayer insulating layer 114, and the second drain region (D1) may be connected to the first drain electrode (DE1) on the interlayer insulating layer 114. ) can be connected to. A data line DL may be disposed on the first organic insulating layer 115. The data line DL may be electrically connected to the first source electrode SE1 through a contact hole. However, the present invention is not limited to this.

Additionally, the second thin film transistor T2 may be provided with a second semiconductor layer AS2 and a second gate electrode G2. The second semiconductor layer AS2 may include a second source region S2, a second channel region A2, and a second drain region D2. A second gate electrode (G2) may be disposed on the second semiconductor layer (AS2). The second source region (S2) may be connected to the second source electrode (SE2) on the interlayer insulating layer 114, and the second drain region (D2) may be connected to the second drain electrode (DE2) on the interlayer insulating layer 114. ) can be connected to. However, the present invention is not limited to this.

Additionally, the third thin film transistor T3 may be provided with a third semiconductor layer AS3 and a third gate electrode G3. The third semiconductor layer AS3 may include a third source region S3, a third channel region A3, and a third drain region D3. A third gate electrode (G3) may be disposed on the third semiconductor layer (AS3). The third source region (S3) may be connected to the third source electrode (SE3) on the interlayer insulating layer 114, and the third drain region (D3) may be connected to the third drain electrode (DE3) on the interlayer insulating layer 114. ) can be connected to. A connection electrode (CM) may be disposed on the first organic insulating layer 115. The connection electrode (CM) may be electrically connected to the third drain electrode (DE3) through a contact hole. However, the present invention is not limited to this.

Hereinafter, for convenience of explanation, the plurality of semiconductor layers (AS1, AS2, AS3) will be referred to as the semiconductor layer (Act), and the plurality of gate electrodes (G1, G2, G3) will be referred to as the gate electrode (GE). do. In addition, a plurality of thin film transistors (T1, T2, T3) are used as a thin film transistor (TFT), and a plurality of source electrodes (SE1, SE2, SE3) and drain electrodes (DE1, DE2, DE3) are used as a source electrode (SE). and drain electrode (DE).

The display panel 10 may include a pixel circuit layer 120 that drives a light emitting device. A pixel circuit layer 120 may be disposed on the substrate 100 of the display panel 10. The pixel circuit layer 120 may include a thin film transistor (TFT) and a storage capacitor (Cst). A thin film transistor (TFT) may include a semiconductor layer (Act), a gate electrode (GE), a source electrode (SE), and a drain electrode (DE). Additionally, the storage capacitor Cst may include a lower electrode (CE1) and an upper electrode (CE2).

In one embodiment, the semiconductor layer (Act) may be disposed on the buffer layer 111. The semiconductor layer (Act) may include polysilicon. Alternatively, the semiconductor layer (Act) may include amorphous silicon, an oxide semiconductor, an organic semiconductor, etc. The semiconductor layer (Act) has a drain region (D1, D2, or D3) and a source region (S1, S2, or S3) disposed on both sides of the channel region (A1, A2, or A3), respectively. may include.

A gate electrode (GE) may be disposed on the semiconductor layer (Act). The gate electrode (GE) may overlap the channel area (A1, A2, or A3). The gate electrode (GE) may include a low-resistance metal material. The gate electrode (GE) may contain a conductive material containing molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multi-layer or single layer containing the above-mentioned materials. there is.

A first gate insulating layer 112 may be disposed between the semiconductor layer (Act) and the gate electrode (GE). The first gate insulating layer 112 is _{made of} silicon oxide ( _{SiO 2} ), silicon nitride ( _{SiN 2} O ₅ ), hafnium oxide (HfO ₂ ), or zinc oxide (ZnO).

A second gate insulating layer 113 may be disposed on the gate electrode GE. The second gate insulating layer 113 may be provided to cover the gate electrode (GE). The second gate insulating layer 113 is _{made of} silicon oxide ( _{SiO 2} ), silicon nitride ( _{SiN 2} O ₅ ), hafnium oxide (HfO ₂ ), or zinc oxide (ZnO).

The upper electrode (CE2) of the storage capacitor (Cst) may be disposed on the second gate insulating layer 113. The upper electrode (CE2) may overlap the second gate electrode (G2) disposed below it. At this time, the second gate electrode (G2) and the upper electrode (CE2) overlapping with the second gate insulating layer 113 therebetween may form a storage capacitor (Cst). That is, the second gate electrode (G2) can function as the lower electrode (CE1) of the storage capacitor (Cst).

In this way, the storage capacitor (Cst) and the second thin film transistor (T2) may be formed to overlap. However, the present invention is not limited to this. For example, the storage capacitor Cst may be formed so as not to overlap the second thin film transistor T2. That is, the lower electrode (CE1) of the storage capacitor (Cst) is a separate component from the second gate electrode (G2) of the second thin film transistor (T2) and the second gate electrode (G2) of the second thin film transistor (T2). It may be provided separately from the.

The upper electrode (CE2) is aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), and iridium (Ir). , chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and/or copper (Cu), and may be a single layer or multiple layers of the foregoing materials. .

An interlayer insulating layer 114 may be disposed on the upper electrode CE2. The interlayer insulating layer 114 may cover the upper electrode (CE2). _{The interlayer} insulating layer 114 is _made of silicon oxide (SiO ₂ ) _, silicon nitride ( _{SiN 5} ), hafnium oxide (HfO ₂ ), or zinc oxide (ZnO). The interlayer insulating layer 114 may be a single layer or a multilayer containing the above-described inorganic insulating material.

The drain electrode (DE) and the source electrode (SE) may each be located on the interlayer insulating layer 114. The drain electrode (DE) and the source electrode (SE) are connected to the semiconductor layer (Act) through contact holes provided in the first gate insulating layer 112, the second gate insulating layer 113, and the interlayer insulating layer 114, respectively. can be connected to The drain electrode (DE) and source electrode (SE) may include a material with good conductivity. The drain electrode (DE) and source electrode (SE) may contain a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be a multilayer containing the above-mentioned materials. Alternatively, it may be formed as a single layer. For example, the drain electrode (DE) and the source electrode (SE) may have a multilayer structure of Ti/Al/Ti.

The organic insulating layer (OIL) may be disposed on the inorganic insulating layer (IIL). The organic insulating layer (OIL) may include a first organic insulating layer 115 and a second organic insulating layer 116. Although FIG. 6 shows two organic insulating layers (OIL), the present invention is not limited thereto. There may be three or four organic insulating layers (OIL).

The first organic insulating layer 115 may cover the drain electrode (DE) and the source electrode (SE). The first organic insulating layer 115 is made of general-purpose polymers such as polymethylmethacrylate (PMMA) or polystyrene (PS), polymer derivatives with phenolic groups, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, and fluorine polymers. , p-xylene-based polymers, vinyl alcohol-based polymers, and blends thereof may be included.

A data line DL may be disposed on the first organic insulating layer 115. At this time, the data line DL may be connected to the source electrode SE1 of the first thin film transistor T1 through a contact hole in the first organic insulating layer 115. The first thin film transistor T1 may be a switching transistor. Although not shown, the first thin film transistor T1 may serve to transmit the data signal transmitted from the data line DL according to the scan signal transmitted through the scan line. However, the present invention is not limited to this.

A connection electrode (CM) may be disposed on the first organic insulating layer 115. The connection electrode CM may be connected to the drain electrode DE3 of the third thin film transistor T3 through a contact hole in the first organic insulating layer 115. The connection electrode (CM) may include a material with good conductivity. The connection electrode (CM) may contain a conductive material containing molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multi-layer or single layer containing the above-mentioned materials. there is. For example, the connection electrode (CM) may have a multilayer structure of Ti/Al/Ti.

In one embodiment, the second organic insulating layer 116 may be disposed on the data line DL and the connection electrode CM. The second organic insulating layer 116 may cover the data line DL and the connection electrode CM. The second organic insulating layer 116 may be made of the same material as the first organic insulating layer 115, or may be made of a different material.

In one embodiment, the first electrode 211 and the first micro light emitting device 131 may be disposed on the second organic insulating layer 116. Describing the structure of the first micro light-emitting device 131 in detail, the first micro light-emitting device 131 is disposed on an active layer 131b that generates light, respectively, and on the lower surface of the active layer 131b, and has a p-type dopant. It is disposed on the upper surface of the doped first semiconductor layer 131a and the active layer 131b and may include a second semiconductor layer 131c doped with an n-type dopant. In other words, the active layer 131b and the second semiconductor layer 131c may be sequentially stacked on the first semiconductor layer 131a.

The first semiconductor layer 131a may have a p-type conductivity type. Specifically, the first semiconductor layer 131a may be formed as a layer doped with a p-type dopant. For example, the first semiconductor layer 131a is doped with a p-type dopant such as zinc (Zn), magnesium (Mg), cobalt (Co), nickel (Ni), copper (Cu), and iron (Fe). He can have the challenge of his older brother. The second semiconductor layer 131c may have an n-type conductivity type. Specifically, the second semiconductor layer 131c may be formed as a layer doped with an n-type dopant. For example, the second semiconductor layer 131c is doped with an n-type dopant such as silicon (Si), germanium (Ge), tin (Sn), selenium (Se), and tellurium (Te) to provide n-type conductivity. You can have it. The active layer 131b may be disposed between the first semiconductor layer 131a and the second semiconductor layer 131c to generate light. The active layer 131b is a layer that outputs light of a predetermined wavelength by recombining holes provided from the first semiconductor layer 131a and electrons provided from the second semiconductor layer 131c, and includes a well layer and a barrier layer. By stacking layers alternately, you can have a single quantum well structure or a multi-quantum well (MQW). Light generated in the active layer 131b may be irradiated to the top, bottom, and sides of the active layer 131b.

In one embodiment, in addition to the first electrode 211 and the first micro light emitting device 131, a pixel defining layer 118, a reflector 140, an insulating layer 121, and a black matrix are formed on the second organic insulating layer 116. (119) and the second electrode 213 may be disposed. Since the structure disposed on the second organic insulating layer 116 in the display panel 10 has been described in FIG. 2, its description will be omitted.

4 to 13 schematically show a method of manufacturing the display panel 10 according to an embodiment of the present invention as a cross-sectional view of the display panel 10. Specifically, FIGS. 4 to 10 schematically show cross-sectional views of the display panel 10 taken along the line Ι-Ι'.

The method of manufacturing the display panel 10 includes forming a first electrode 211 on a substrate 100, forming an opening 118OP on the first electrode 211 to expose at least a portion of the first electrode 211. forming a defined pixel defining layer 118, combining (or connecting) the micro light emitting device 130 to the first electrode 211, pixel defining layer 118, first electrode 211 and covering the micro light emitting device 130 with a material 141 for forming a reflector, the pixel definition film 118 to which the micro light emitting device 130 is connected and covered with the material 141 for forming a reflector. It includes filling the opening 118OP with an organic film or photoresist 125, etching and removing the exposed portion of the reflector forming material 141, and removing the organic film or photoresist 125. can do. The manufacturing method of the display panel 10 will be described in more detail later.

Referring to FIG. 4, a first electrode 211 may be disposed on the substrate 100. The first electrodes 211 may be disposed on the substrate 100 to be spaced apart from each other. The micro light emitting devices 130 may later be combined (or connected) to the first electrode 211. The micro light emitting device 130 may be coupled (or connected) to the first electrode 211 using a eutectic bonding method. The first electrode 211 may function as a connection layer. The first electrode 211 may be provided as a single layer of copper (Cu), tin (Sn), or gold (Au). Additionally, the first electrode 211 may include a compound of copper (Cu), tin (Sn), or gold (Au). Additionally, the first electrode 211 may be made of a combination film in which a layer made of copper (Cu), a layer made of tin (Sn), or a previous layer made of Au (gold) are stacked.

Referring to FIG. 5 , a pixel defining layer 118 having an opening 118OP that exposes at least a portion of the first electrode 211 may be disposed on the first electrode 211 . In a later process, micro light emitting devices 130 may be disposed within the openings 118OP of the pixel definition layer 118, respectively. Specifically, the first micro light emitting device 131 (see FIG. 7) may be disposed within the first opening 118OP1 of the pixel defining layer 118, and may be disposed within the second opening 118OP2 of the pixel defining layer 118. A second micro light emitting device 132 (see FIG. 7) may be disposed. Additionally, a third micro light emitting device 133 (see FIG. 7) may be disposed in the third opening 118OP3 of the pixel defining layer 118. In other words, the width of the opening 118OP of the pixel defining layer 118 may correspond to the width of the light emitting area.

Referring to FIG. 6, the micro light emitting devices 130 may each be coupled (or connected) to the first electrode 211. Specifically, the micro light emitting devices 130 may be bonded (or connected) to the first electrode 211 using a eutectic bonding method. Specifically, a laser is irradiated to the lower surfaces of the first electrode 211 and the micro light emitting device 130, so that the micro light emitting device 130 is bonded (or connected) to the first electrode 211 by eutectic bonding. It can be.

The first micro light emitting device 131 coupled (or connected) to the first electrode 211 may form the first pixel 151. The second micro light emitting device 132 coupled (or connected) to the first electrode 211 may form the second pixel 152. Additionally, the third micro light emitting device 133 coupled (or connected) to the first electrode 211 may form the third pixel 153. The first micro light emitting element 131 forming the first pixel 151, the second micro light emitting element 132 forming the second pixel 152, and the third micro light emitting element 133 forming the third pixel 153. ) can emit light of different wavelengths. The display device can implement images through light emitted from the first pixel 151, second pixel 152, and third pixel 153.

Referring to FIG. 7, a black matrix 119 may be formed on the pixel defining layer 118. The black matrix 119 can distinguish areas of pixels. The black matrix 119 can prevent light from leaking between a plurality of pixels. In other words, the black matrix 119 can absorb the light emitted by the micro light emitting devices 130 and prevent the lights generated from the micro light emitting devices 130 disposed in each of the plurality of pixels from mixing with each other. In the display panel 10 according to an embodiment of the present invention, the black matrix 119 may be directly disposed on the upper surface of the pixel definition layer 118, as shown in FIG. 7. In other words, before the reflector forming material 141 (see FIG. 8) is disposed on the display panel 10, the black matrix 119 may be disposed on the pixel definition layer 118.

Referring to FIG. 8, the material 141 for forming a reflector may be covered along the top and side surfaces of the black matrix 119, the pixel definition film 118, the first electrode 211, and the micro light emitting elements 130. there is. In other words, the material for forming a reflector 141 can be continuously covered along the top and side surfaces of the black matrix 119, the pixel definition film 118, the first electrode 211, and the micro light emitting elements 130. there is.

Metals included in the first electrode 211, such as copper (Cu), tin (Sn), or gold (Au), have low reflectivity, which may reduce the emission rate of light generated from the micro light emitting device 130. By disposing the reflector 140 on the pixel circuit layer 120, the reflectance of light generated from the micro light emitting device 130 can be improved.

Assuming that the reflector 140 has a first reflectance and the first electrode 211 has a second reflectance, the first reflectance may be higher than the second reflectance. In other words, the reflectance of the reflector 140 may be higher than that of the first electrode 211. However, the present invention is not limited to this.

The material 141 for forming the reflector may include silver (Ag), aluminum (Al), or compounds thereof. The material 141 for forming the reflector may include a conductive oxide (eg, indium tin oxide (ITO)). The material 141 for forming the reflector may include an alloy containing silver (Ag), aluminum (Al), or a conductive oxide (eg, indium tin oxide (ITO)).

Referring to FIG. 9, the micro light emitting device 130 is coupled (or connected), and the opening 118OP of the pixel defining film 118 covered with the reflector forming material 141 is covered with the photoresist 125. It can be filled.

While the etching process is in progress, the exposed portion where the photoresist 125 is not disposed is removed through etching, and the portion where the photoresist 125 is disposed may remain without being etched. Depending on the degree (or depth) of the photoresist 125 filled, the length of the material 141 for forming a reflector covered with the photoresist 125 may vary. In other words, the length of the material 141 for forming a reflector that remains without being etched may vary depending on the degree (or depth) of the photoresist 125 filled. Depending on the degree (or depth) of the photoresist 125 filled, the length (L, see FIG. 10) of the portion where the reflector 140 is in contact with the micro light emitting device 130 may vary.

In order for the display panel 10 to be manufactured in an advantageous direction while ensuring reflectivity, the contact length (L) between the micro light emitting device 130 and the reflector 140 may be 0.1 μm or more and 5 μm or less. Depending on the extent (or depth) of the photoresist 125 filling the opening of the pixel definition film 118, the contact length (L, see FIG. 10) between the reflector 140 and the micro light emitting device 130 may vary. . In other words, the photoresist 125 may be filled in the opening 118OP of the pixel defining layer 118 so that the length in contact with the micro light emitting device 130 is 0.1 μm or more and 5 μm or less.

Referring to FIG. 10, a reflector 140 may be formed to cover at least a portion of the inner surface forming the opening 118OP of the pixel defining film 118, the first electrode 211, and the side surface of the micro light emitting device 130. there is.

The reflector 140 may be formed as a single layer of silver (Ag), aluminum (Al), or conductive oxide (eg, indium tin oxide (ITO)). Alternatively, the reflector 140 may be made of an alloy film containing silver (Ag), aluminum (Al), or a conductive oxide (eg, indium tin oxide (ITO)). The reflector 140 has a structure in which a layer containing silver (Ag), aluminum (Al), or a compound thereof and a layer containing a conductive oxide (e.g., indium tin oxide (ITO)) are stacked in multiple layers. You can. In other words, the material 141 for forming a reflector includes several layers including a layer containing silver (Ag), aluminum (Al), or a compound thereof, and a layer containing a conductive oxide (e.g., indium tin oxide (ITO)). A laminated combination membrane can be formed.

After the photoresist 125 is disposed in the opening 118OP of the pixel defining layer 118, the portion where the photoresist 125 is not disposed, that is, the material for forming a reflector exposed because the photoresist 125 is not covered. (141) can be removed through an etching process. On the other hand, the material 141 for forming a reflector on which the photoresist 125 is covered (or disposed) may not be removed. The photoresist 125 can prevent the material 141 for forming a reflector disposed below from being etched. The contact length (L) between the reflector 140 and the micro light emitting device 130 may be 0.1 μm or more and 5 μm or less.

Referring to FIG. 11, after the reflector forming material 141 that is not covered with the photoresist 125 is removed through an etching process, the photoresist 125 filled in the opening 118OP of the pixel defining layer 118 is shown. can be removed Since the photoresist 125 is used to selectively etch the material 141 for forming the reflector, the photoresist 125 can be removed later.

Referring to FIGS. 12 and 13 , an insulating layer 121 may be formed on the pixel definition film 118 and the reflector 140. The insulating layer 121 may be filled between the micro light emitting device 130 and the black matrix 119. In other words, the insulating layer 121 may be disposed to surround the side of the micro light emitting device 130. The insulating layer 121 may be made of an organic material.

After the insulating layer 121 is filled between the black matrix 119 and the micro light emitting device 130, the second electrode 213 is formed on the black matrix 119, the insulating layer 121, and the micro light emitting device 130. This can be placed. The second electrode 213 may entirely cover the upper surface of the display panel 10 . In other words, the second electrode 213 may be continuously covered on the black matrix 119, the insulating layer 121, and the micro light emitting device 130.

14 to 20 are cross-sectional views schematically showing a method of manufacturing the display panel 10 according to another embodiment of the present invention. 14 to 20 schematically show cross-sectional views of the display panel 10 viewed along the line Ι-Ι'. The manufacturing method of the display panel 10 according to another embodiment of the present invention shown in FIGS. 14 to 20 is the same as the manufacturing method of the display panel 10 according to the embodiment of the present invention described above in FIGS. 4 to 6. However, the subsequent process may be different. Specifically, the method of manufacturing the display panel 10 according to another embodiment of the present invention includes the method of manufacturing the display panel 10 according to an embodiment of the present invention and the black matrix 119 disposed on the pixel defining layer 118. ) and the stacking order of the second electrode 213 may be slightly different.

In the manufacturing method of the display panel 10 according to another embodiment of the present invention, as described in FIGS. 4 to 6, the first electrodes 211 may be arranged to be spaced apart on the substrate 100, and the first electrode ( A pixel defining layer 118 exposing at least a portion of the first electrode 211 may be disposed on 211). Additionally, after the pixel definition film 118 is disposed, the micro light emitting device 130 may be bonded (or connected) to the first electrode 211 through eutectic bonding.

Referring to FIG. 14 , the material 141 for forming a reflector may be covered along the top and side surfaces of the pixel definition film 118, the first electrode 211, and the micro light emitting device 130. The material 141 for forming a reflector may be disposed continuously on the pixel definition film 188. At this time, the black matrix 119 may not be disposed on the pixel definition layer 118.

Referring to FIG. 15 , the micro light emitting device 130 is connected and the opening 118OP of the pixel defining film 118 covered with the material 141 for forming a reflector may be filled with the photoresist 125. In the etching process, the exposed portion where the photoresist 125 is not disposed may be removed through etching, and the portion where the photoresist 125 is disposed may remain without being etched. Depending on the height of the photoresist 125 filled in the opening 118OP of the pixel definition layer 118, the length of the material 141 for forming a reflector that remains without being etched may vary. Photoresist 125 may be filled in the opening 118OP of the pixel defining layer 118 so that the contact length (L, see FIG. 16) between the reflector 140 and the micro light emitting device 130 is 0.1 ㎛ or more and 5 ㎛ or less. there is.

Referring to FIG. 16, a reflector 140 may be formed to cover at least a portion of the inner surface forming the opening 118OP of the pixel defining film 118, the first electrode 211, and the side surface of the micro light emitting device 130. there is. The reflector forming material 141 exposed without the photoresist 125 covered can be removed through an etching process, and the reflector forming material 141 covered with the photoresist 125 remains without being etched to form the reflector. (140) can be formed. The contact length between the reflector 140 and the micro light emitting device 130 may be 0.1 ㎛ or more and 5 ㎛ or less.

17 and 18, after the reflector forming material 141 is partially etched to form the reflector 140, the photoresist 125 filled in the opening 118OP of the pixel defining layer 118 is removed. You can.

After the photoresist 125 filling the opening 118OP of the pixel defining layer 118 is removed, the insulating layer 121 may be formed on the pixel defining layer 118 and the reflector 140. The insulating layer 121 may be formed to surround the micro light emitting device 130, and the insulating layer 121 may be arranged to be spaced apart with the pixel defining film 118 therebetween.

19 and 20, after the insulating layer 121 is formed, the second electrode 213 is formed entirely along the top and side surfaces of the pixel defining layer 118, the insulating layer 121, and the micro light emitting device 130. This can be covered. A portion of the second electrode 213 may be directly disposed on the top surface of the pixel defining layer 118. Additionally, a portion of the second electrode 213 may be disposed along the side of the insulating layer 121. However, the present invention is not limited to this.

In one embodiment, after the second electrode 213 is entirely formed on the display panel 10, the black matrix 119 may be disposed on the pixel definition layer 118 where the insulating layer 121 is not disposed. there is. A second electrode 213 may be located on the bottom of the black matrix 119 disposed on the pixel definition layer 118. The second electrode 213 may be positioned between the pixel definition layer 118 and the black matrix 119. Additionally, the second electrode 213 may be disposed along the side surface between the black matrix 119 and the insulating layer 121.

A method of coupling (or connecting) the micro light emitting device 130 to the first electrode 211 may include eutectic bonding, soldering, or a method using an anisotropic conductive film (ACF). Considering the resolution of the panel and the processing temperature of the panel constituent materials, eutectic bonding may be the most advantageous method of bonding (or connecting) the micro light emitting device 130 to the first electrode 211.

In order to eutectic bond the micro light emitting device 130 to the first electrode 211, considering material cost and fairness, the first electrode 211 is made of copper (Cu), tin (Sn), or gold (Au). It may be made of metal such as: However, metals such as copper (Cu), tin (Sn), or gold (Au) have low reflectivity, so the emission rate (or light efficiency) of light generated from the micro light-emitting device 130 may decrease.

In order to increase the light efficiency of the display panel 10, the reflectance of light generated from the micro light emitting device 130 can be increased. By disposing a reflector 140 containing a metal with a higher reflectivity than the metal contained in the first electrode 211 on the display panel 10, the reflectance of light generated from the micro light emitting device 130 can be increased to improve light efficiency. You can.

The reflector 140 may be disposed along at least a portion of the inner surface forming the opening 118OP of the pixel defining film 118, the first electrode 211, and the side surface of the micro light emitting device 130. The reflector 140 may include silver (Ag), aluminum (Al), or compounds thereof. Additionally, the reflector 140 may include a conductive oxide (eg, indium tin oxide (ITO)).

The present invention has been described with reference to the embodiments shown in the drawings, but these are merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the attached patent claims.

10: Display panel
130: Micro light emitting device
120: Pixel circuit layer
211: first electrode
140: reflector
118: Hwajojeongui Marquee
119: Black Matrix
213: second electrode

Claims (20)

Board;
a first electrode disposed on the substrate;
a pixel definition film disposed on the first electrode and having an opening defined to expose at least a portion of the first electrode;
a micro light emitting device coupled to the first electrode; and
A display panel comprising: a reflector disposed on the first electrode and covering at least a portion of a side surface of the micro light emitting device. According to paragraph 1,
The display panel wherein the reflector has a first reflectance, and the first electrode has a second reflectance lower than the first reflectance. According to paragraph 1,
The display panel is disposed directly on the upper surface of the first electrode. According to paragraph 1,
A display panel, wherein the reflector includes a first metal. According to paragraph 4,
A display panel wherein the first metal includes silver, aluminum, or a compound thereof. According to paragraph 1,
A display panel, wherein the reflector includes a conductive oxide. According to paragraph 4,
A display panel, wherein the reflector includes a combination film of a first metal and a conductive oxide. According to paragraph 1,
A display panel, wherein the length of the portion where the reflector and the side of the micro light emitting device contact each other is 0.1 μm to 5 μm. According to paragraph 1,
A display panel wherein the first electrode and the micro light emitting device are joined by eutectic bonding. According to paragraph 4,
The display panel wherein the first electrode includes a second metal different from the first metal. According to clause 10,
The display panel wherein the second metal includes copper, tin, gold, or a compound thereof. According to paragraph 1,
a black matrix disposed on the pixel definition layer; and
The display panel further comprising: an insulating film disposed on a portion of the pixel defining film and the reflector. According to clause 12,
A display panel, wherein the insulating film fills between the micro light emitting element and the black matrix. According to clause 12,
The display panel further comprising a second electrode disposed on the insulating film and the micro light emitting device. According to clause 14,
The display panel wherein the second electrode is disposed on the black matrix. According to clause 14,
The display panel wherein the second electrode is disposed between the pixel defining layer and the black matrix. forming a first electrode on a substrate;
forming a pixel definition layer on the first electrode, wherein an opening is defined to expose at least a portion of the first electrode;
coupling a micro light emitting device to the first electrode;
covering the pixel definition film, the first electrode, and the micro light emitting device with a material for forming a reflector;
filling an opening of the pixel defining film to which the micro light emitting device is connected and covered with a material for forming a reflector with an organic film or a photoresist layer;
Etching and removing the exposed portion of the material for forming the reflector; and
A method of manufacturing a display panel comprising: removing the organic film or photoresist layer. According to clause 17,
forming an insulating layer on the pixel defining layer and the reflector; and
forming a second electrode on the insulating layer; A method of manufacturing a display panel including. According to clause 18,
forming a black matrix on the pixel defining layer; and
forming the second electrode on the black matrix; A method of manufacturing a display panel further comprising: According to clause 18,
forming the second electrode on the pixel defining layer; and
forming a black matrix on the second electrode; A method of manufacturing a display panel further comprising:

Images