KR20240041993A - Display device, display module, electronic device, and method of manufacturing display device - Google Patents

Abstract

A highly reliable display device is provided. Comprising a first light-emitting element, a second light-emitting element adjacent to the first light-emitting element, a first insulating layer provided between the first light-emitting element and the second light-emitting element, and a second insulating layer on the first insulating layer. It is a display device. The first light emitting element includes a first conductive layer, a second conductive layer covering the top and side surfaces of the first conductive layer, a first EL layer covering the top and side surfaces of the second conductive layer, and a common layer over the first EL layer. Contains electrodes. The second light emitting element includes a third conductive layer, a fourth conductive layer covering the top and side surfaces of the third conductive layer, a second EL layer covering the top and side surfaces of the fourth conductive layer, and a common EL layer on the second EL layer. Contains electrodes. A common electrode is provided on the second insulating layer. The reflectance of the first conductive layer to visible light is higher than that of the second conductive layer, and the reflectivity of the third conductive layer to visible light is higher than that of the fourth conductive layer.

Description

Display device, display module, electronic device, and method of manufacturing display device

One aspect of the present invention relates to display devices, display modules, and electronic devices. One aspect of the present invention relates to a method of manufacturing a display device.

Additionally, one form of the present invention is not limited to the above technical field. Technical fields of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (eg, touch sensors), input/output devices (eg, touch panels), These driving methods or their manufacturing methods can be cited as examples.

In recent years, display devices are expected to be applied for various purposes. For example, applications for large display devices include home television devices (also called televisions or television receivers), digital signage (electronic signage), and PID (Public Information Display). Additionally, the development of portable information terminals such as smartphones and tablet terminals including touch panels is in progress.

In addition, there is a demand for high-definition display devices. Devices requiring a high-definition display device, for example, for virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR) The device is being actively developed.

As a display device, for example, a light-emitting device having a light-emitting element (also referred to as a light-emitting device) is being developed. Light-emitting devices (also known as EL devices or organic EL devices) using the electroluminescence (EL) phenomenon are easy to make thin and lightweight, can respond at high speeds to input signals, and can be driven using a direct current constant voltage power supply. It has the following characteristics and is applied to display devices.

Patent Document 1 discloses a VR display device using an organic EL element (also referred to as an organic EL device).

Additionally, Non-Patent Document 1 discloses a method of manufacturing an organic optoelectronic device using standard UV photolithography.

International Publication No. WO2018/087625

B. Lamprecht et al., “Organic optoelectronic device fabrication using standard UV photolithography,” phys. stat. sol. (RRL) 2, No.1, pp.16-18 (2008)

For example, an organic EL device can have a structure in which a layer containing an organic compound is sandwiched between a pair of electrodes. Here, when the electrode is composed of a plurality of layers containing different materials stacked, for example, the electrode may deteriorate due to a reaction between the plurality of layers. As a result, the yield of the display device may decrease.

Therefore, one of the tasks of one embodiment of the present invention is to provide a highly reliable display device. Another object of one embodiment of the present invention is to provide a display device including a light-emitting element with high luminous efficiency. Another object of one embodiment of the present invention is to provide a display device with low power consumption. Another object of one embodiment of the present invention is to provide a display device with high light extraction efficiency. Another object of one embodiment of the present invention is to provide an inexpensive display device. Another object of one embodiment of the present invention is to provide a display device with high display quality. Another object of one embodiment of the present invention is to provide a high-definition display device. Another object of one embodiment of the present invention is to provide a high-resolution display device. Another object of one embodiment of the present invention is to provide a new display device.

Another object of one embodiment of the present invention is to provide a method for manufacturing a display device with high yield. Another object of one embodiment of the present invention is to provide a method for manufacturing a highly reliable display device. Another object of one embodiment of the present invention is to provide a method for manufacturing a display device including a light-emitting element with high luminous efficiency. Another object of one embodiment of the present invention is to provide a method for manufacturing a display device with low power consumption. Another object of one embodiment of the present invention is to provide a method for manufacturing a display device with high light extraction efficiency. Another object of one embodiment of the present invention is to provide a method for manufacturing a display device with high display quality. Another object of one embodiment of the present invention is to provide a method for manufacturing a high-definition display device. Another object of one embodiment of the present invention is to provide a method for manufacturing a high-resolution display device. Another object of one embodiment of the present invention is to provide a method for manufacturing a new display device.

Additionally, the description of these tasks does not interfere with the existence of other tasks. One form of the present invention does not necessarily solve all of these problems. These and other issues can be extracted from the description of the specification, drawings, and claims.

One aspect of the present invention includes a first light-emitting element, a second light-emitting element adjacent to the first light-emitting element, a first insulating layer provided between the first light-emitting element and the second light-emitting element, and a first insulating layer on the first insulating layer. It includes two insulating layers, and the first light emitting element includes a first conductive layer, a second conductive layer covering the top and side surfaces of the first conductive layer, a first EL layer on the second conductive layer, and a first EL layer. It includes the above common electrode, and the second light emitting element includes a third conductive layer, a fourth conductive layer covering the top and side surfaces of the third conductive layer, a second EL layer on the fourth conductive layer, and a second EL layer. and a common electrode on the layer, wherein the common electrode is provided on the second insulating layer, wherein the reflectance of the first conductive layer to visible light is higher than the reflectance of the second conductive layer to visible light, and the reflectance of the third conductive layer to visible light is higher. It is a display device whose reflectance is higher than that of the fourth conductive layer to visible light.

Or, in the above form, the first EL layer includes a first functional layer having a region in contact with the second conductive layer, and a first light-emitting layer on the first functional layer, and the second EL layer has a region in contact with the fourth conductive layer. It may include a second functional layer having and a second light-emitting layer on the second functional layer.

Or, in the above form, the first functional layer and the second functional layer include at least one of a hole injection layer and a hole transport layer, the work function of the second conductive layer is greater than the work function of the first conductive layer, and the fourth conductive layer The work function of may be greater than that of the third conductive layer.

Or, in the above form, the first light emitting element includes a common layer between the first EL layer and the common electrode, the second light emitting device includes a common layer between the second EL layer and the common electrode, and the common layer includes the second EL layer. It is located between the insulating layer and the common electrode, and the common layer may include at least one of an electron injection layer and an electron transport layer.

Or, in the above form, the first functional layer and the second functional layer include at least one of an electron injection layer and an electron transport layer, the work function of the second conductive layer is smaller than the work function of the first conductive layer, and the fourth conductive layer The work function of may be smaller than that of the third conductive layer.

Or, in the above form, the first light emitting element includes a common layer between the first EL layer and the common electrode, the second light emitting device includes a common layer between the second EL layer and the common electrode, and the common layer includes the second EL layer. It is located between the insulating layer and the common electrode, and the common layer may include at least one of a hole injection layer and a hole transport layer.

Alternatively, in the above embodiment, the second conductive layer and the fourth conductive layer may contain an oxide containing one or more of indium, tin, zinc, gallium, titanium, aluminum, and silicon.

Or, in the above form, the first insulating layer has a region in contact with the side surface of the first EL layer and the side surface of the second EL layer, covers a part of the upper surface of the first EL layer and a part of the upper surface of the second EL layer, and has a cross section of When viewed from above, the end of the second insulating layer has a tapered shape with a taper angle of less than 90°, and the second insulating layer may cover at least a portion of the side surface of the first insulating layer.

Alternatively, in the above form, the end portion of the first insulating layer may have a tapered shape with a taper angle of less than 90° when viewed in cross section.

Alternatively, in the above aspect, the first insulating layer may be an inorganic insulating layer, and the second insulating layer may be an organic insulating layer.

Alternatively, in the above aspect, the first insulating layer may contain aluminum oxide, and the second insulating layer may contain an acrylic resin.

A display device of one form of the present invention and a display module including at least one of a connector and an integrated circuit are also an aspect of the present invention.

An electronic device including a display module of one form of the present invention and at least one of a housing, battery, camera, speaker, and microphone is also an aspect of the present invention.

Alternatively, one embodiment of the present invention forms a first conductive layer, covers the top and side surfaces of the first conductive layer, and forms a second conductive layer that has a lower reflectance to visible light than the first conductive layer, and the second conductive layer This is a method of manufacturing a display device in which an EL film is formed on the EL film, a mask film is formed on the EL film, and the EL film and the mask film are processed to form an EL layer on the second conductive layer and a mask layer on the EL layer.

Alternatively, in the above aspect, hydrophobization treatment may be performed on the second conductive layer after formation of the second conductive layer but before formation of the EL film.

Alternatively, in the above form, hydrophobization treatment may be performed by performing fluorine modification on the second conductive layer.

Alternatively, one aspect of the present invention includes a third conductive layer that forms a first conductive layer and a second conductive layer, covers the top and side surfaces of the first conductive layer, and has a lower reflectance to visible light than the first conductive layer, and a third conductive layer. A fourth conductive layer is formed to cover the top and side surfaces of the second conductive layer and has a lower reflectance for visible light than the second conductive layer, a first EL film is formed on the third conductive layer and on the fourth conductive layer, and the first EL film is formed on the third conductive layer and on the fourth conductive layer. A first mask film is formed on the EL film, the first EL film and the first mask film are processed to form a first EL layer on the third conductive layer, a first mask layer on the first EL layer, and a fourth conductive layer. The conductive layer is exposed, a second EL film is formed on the first mask layer and the fourth conductive layer, a second mask film is formed on the second EL film, and the second EL film and the second mask film are processed to form a fourth conductive layer. forming a second EL layer on the layer and a second mask layer on the second EL layer, further exposing the first mask layer, and forming an insulating film using a photosensitive material on the first mask layer and on the second mask layer. forming and processing an insulating film to form an insulating layer between the first EL layer and the second EL layer, and performing an etching process using the insulating layer as a mask to form the top surface of the first EL layer and the top surface of the second EL layer. This is a method of manufacturing a display device by exposing and forming a common electrode on the first EL layer, the second EL layer, and the insulating layer.

Alternatively, in the above embodiment, hydrophobization treatment may be performed on the third conductive layer and the fourth conductive layer after formation of the third conductive layer and the fourth conductive layer but before formation of the first EL film.

Alternatively, in the above embodiment, hydrophobization treatment may be performed by performing fluorine modification on the third conductive layer and the fourth conductive layer.

Alternatively, in the above form, the etching treatment may be performed by wet etching.

According to one embodiment of the present invention, a highly reliable display device can be provided. Alternatively, according to one embodiment of the present invention, a display device including a light-emitting element with high luminous efficiency can be provided. Alternatively, a display device with low power consumption can be provided according to one embodiment of the present invention. Alternatively, a display device with high light extraction efficiency can be provided by one embodiment of the present invention. Alternatively, an inexpensive display device can be provided by one embodiment of the present invention. Alternatively, a display device with high display quality can be provided by one embodiment of the present invention. Alternatively, a high-definition display device can be provided according to one embodiment of the present invention. Alternatively, a high-resolution display device can be provided according to one embodiment of the present invention. Alternatively, a new display device can be provided according to one embodiment of the present invention.

Alternatively, a method of manufacturing a display device with high yield can be provided by one embodiment of the present invention. Alternatively, a method of manufacturing a highly reliable display device can be provided by one embodiment of the present invention. Alternatively, according to one embodiment of the present invention, a method of manufacturing a display device including a light-emitting element with high luminous efficiency can be provided. Alternatively, a method of manufacturing a display device with low power consumption can be provided according to one embodiment of the present invention. Alternatively, a method of manufacturing a display device with high light extraction efficiency can be provided according to one embodiment of the present invention. Alternatively, a method of manufacturing a display device with high display quality can be provided according to one embodiment of the present invention. Alternatively, a method for manufacturing a high-definition display device can be provided according to one embodiment of the present invention. Alternatively, a method of manufacturing a high-resolution display device can be provided according to one embodiment of the present invention. Alternatively, a method of manufacturing a new display device can be provided according to one embodiment of the present invention.

Additionally, the description of these effects does not preclude the existence of other effects. One form of the present invention does not necessarily have to have all of these effects. These other effects can be extracted from the description of the specification, drawings, and claims.

1 is a plan view showing a configuration example of a display device.
Figure 2(A) is a cross-sectional view showing a configuration example of a display device. Figures 2 (B1) and (B2) are cross-sectional views showing a configuration example of a pixel electrode.
Figures 3 (A) and (B) are cross-sectional views showing a configuration example of a pixel electrode.
Figures 4 (A) to (C) are cross-sectional views showing examples of the configuration of pixel electrodes.
Figures 5 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figures 6 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figures 7 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figures 8 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figures 9 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figure 10 is a cross-sectional view showing a configuration example of a display device.
Figures 11 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figures 12 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figures 13 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figure 14 is a cross-sectional view showing a configuration example of a display device.
Figures 15 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figures 16 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figures 17 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figures 18 (A) to (F) are cross-sectional views showing a configuration example of a display device.
Figures 19 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figures 20 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figures 21 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figures 22 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figure 23 is a cross-sectional view showing a configuration example of a display device.
Figures 24 (A) to (D) are cross-sectional views showing examples of methods for manufacturing a display device.
Figures 25 (A) to (D) are cross-sectional views showing an example of a manufacturing method of a display device.
Figures 26 (A) to (D) are cross-sectional views showing an example of a manufacturing method of a display device.
Figures 27 (A), (B1), and (B2) are cross-sectional views showing examples of methods for manufacturing a display device.
Figures 28 (A) and (B) are cross-sectional views showing an example of a manufacturing method of a display device.
Figures 29 (A) and (B) are cross-sectional views showing an example of a manufacturing method of a display device.
Figures 30 (A) and (B) are cross-sectional views showing an example of a manufacturing method of a display device.
31 (A) and (B) are cross-sectional views showing an example of a manufacturing method of a display device.
Figures 32 (A), (B), (C), (D1), and (D2) are cross-sectional views showing examples of methods for manufacturing a display device.
33 (A) to (D) are cross-sectional views showing an example of a manufacturing method of a display device.
34 (A) to (C) are cross-sectional views showing an example of a manufacturing method of a display device.
35 (A) to (C) are cross-sectional views showing an example of a manufacturing method of a display device.
36 (A) to (D) are cross-sectional views showing an example of a manufacturing method of a display device.
Figures 37 (A) and (B) are cross-sectional views showing an example of a manufacturing method of a display device.
38 (A) to (D) are cross-sectional views showing an example of a manufacturing method of a display device.
Figures 39 (A) to (D) are cross-sectional views showing an example of a manufacturing method of a display device.
Figures 40 (A) to (C) are cross-sectional views showing an example of a manufacturing method of a display device.
Figures 41 (A) and (B) are cross-sectional views showing an example of a manufacturing method of a display device.
Figures 42 (A) and (B) are cross-sectional views showing an example of a manufacturing method of a display device.
Figures 43 (A) to (E) are cross-sectional views showing an example of a manufacturing method of a display device.
Figures 44 (A) to (D) are cross-sectional views showing an example of a manufacturing method of a display device.
Figures 45 (A) to (C) are cross-sectional views showing an example of a manufacturing method of a display device.
Figures 46 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figures 47 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figures 48 (A) to (G) are plan views showing examples of the configuration of pixels.
Figures 49 (A) to (I) are plan views showing examples of the configuration of pixels.
Figures 50 (A) and (B) are perspective views showing a configuration example of a display module.
Figures 51 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figures 52 (A) and (B) are cross-sectional views showing a configuration example of a display device.
Figure 53 is a cross-sectional view showing a configuration example of a display device.
Figure 54 is a cross-sectional view showing a configuration example of a display device.
Figure 55 is a cross-sectional view showing a configuration example of a display device.
Figure 56 is a cross-sectional view showing a configuration example of a display device.
Figure 57 is a cross-sectional view showing a configuration example of a display device.
Figure 58 is a cross-sectional view showing a configuration example of a display device.
Figure 59 is a cross-sectional view showing a configuration example of a display device.
Figure 60 is a cross-sectional view showing a configuration example of a display device.
Figure 61 is a cross-sectional view showing a configuration example of a display device.
Figure 62 is a cross-sectional view showing a configuration example of a display device.
Figure 63 is a cross-sectional view showing a configuration example of a display device.
Figure 64 is a cross-sectional view showing a configuration example of a display device.
Figure 65 is a cross-sectional view showing a configuration example of a display device.
Figure 66 is a cross-sectional view showing a configuration example of a display device.
Figure 67 is a cross-sectional view showing a configuration example of a display device.
Figure 68 is a cross-sectional view showing a configuration example of a display device.
Figure 69 is a perspective view showing a configuration example of a display device.
Figure 70(A) is a cross-sectional view showing a configuration example of a display device. Figures 70 (B1) and (B2) are cross-sectional views showing a configuration example of a transistor.
Figure 71 is a cross-sectional view showing a configuration example of a display device.
Figure 72 is a cross-sectional view showing a configuration example of a display device.
Figures 73 (A) to (B3) are cross-sectional views showing a configuration example of a display device.
Figures 74 (A) to (B3) are cross-sectional views showing a configuration example of a display device.
Figures 75 (A) to (C) are cross-sectional views showing a configuration example of a display device.
Figures 76 (A) to (F) are cross-sectional views showing a configuration example of a light-emitting device.
Figures 77 (A) to (C) are cross-sectional views showing examples of the configuration of a light-emitting device.
Figures 78 (A) to (D) are diagrams showing an example of an electronic device.
Figures 79 (A) to (F) are diagrams showing an example of an electronic device.
Figures 80 (A) to (G) are diagrams showing an example of an electronic device.

The embodiment will be described in detail using the drawings. However, the present invention is not limited to the following description, and those skilled in the art can easily understand that the form and details can be changed in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as limited to the description of the embodiments below.

In addition, in the configuration of the invention described below, the same symbols are commonly used in different drawings for parts that are the same or have the same function, and repeated descriptions thereof are omitted. Additionally, when referring to parts with the same function, the hatch patterns may be the same and no special symbols may be added.

Additionally, the position, size, and range of each component shown in the drawings may not represent the actual position, size, and range for easy understanding. Therefore, the disclosed invention is not necessarily limited to the location, size, and scope disclosed in the drawings.

Additionally, the terms 'membrane' and 'layer' can be interchanged depending on the case or situation. For example, there are cases where the term 'conductive layer' can be changed to the term 'conductive film'. Or, for example, there are cases where the term 'insulating film' can be changed to the term 'insulating layer'.

In this specification, terms indicating arrangement such as 'above', 'below', 'above', or 'below' are sometimes used for convenience in explaining the positional relationship between components with reference to the drawings. Additionally, the positional relationships between components change appropriately depending on the direction in which each configuration is depicted. Therefore, it is not limited to the words described in this specification, etc., and can be rephrased appropriately depending on the situation. For example, the expression 'insulating layer located above the conductive layer' can be rephrased as 'insulating layer located below the conductive layer' by rotating the direction of the drawing by 180°.

In this specification and the like, a device manufactured using a metal mask or FMM (fine metal mask) is sometimes referred to as a device with an MM (metal mask) structure. Additionally, in this specification and elsewhere, devices manufactured without using a metal mask or FMM are sometimes called devices with an MML (metal maskless) structure.

In this specification, etc., holes or electrons may be referred to as 'carriers'. Specifically, the hole injection layer or electron injection layer is sometimes called a 'carrier injection layer', the hole transport layer or electron transport layer is called a 'carrier transport layer', and the hole blocking layer or electron blocking layer is sometimes called a 'carrier blocking layer'. . Additionally, the carrier injection layer, carrier transport layer, and carrier blocking layer described above may not be clearly distinguished depending on their cross-sectional shape or characteristics. Additionally, there are cases where one layer also functions as two or three of the carrier injection layer, carrier transport layer, and carrier blocking layer.

In this specification and the like, the light emitting device includes an EL layer between a pair of electrodes. The EL layer has at least a light emitting layer. Here, the layers included in the EL layer include a light emitting layer, a carrier injection layer, a carrier transport layer, and a carrier blocking layer.

In this specification and the like, the carrier injection layer refers to one or both of a hole injection layer and an electron injection layer. Additionally, the carrier transport layer represents one or both of a hole transport layer and an electron transport layer. Additionally, the carrier blocking layer represents one or both of a hole blocking layer and an electron blocking layer.

In this specification and the like, the tapered shape refers to a shape in which at least a portion of the side surface of the structure is inclined with respect to the substrate surface. For example, it refers to a shape that has an area where the angle formed between the inclined side and the substrate surface (also called the taper angle) is less than 90°. In addition, the side surface of the structure and the substrate surface do not necessarily have to be completely flat, and may be substantially flat with a fine curvature or a substantially flat shape with fine irregularities.

(Embodiment 1)

In this embodiment, a display device of one form of the present invention and a method of manufacturing the same will be described.

A display device of one embodiment of the present invention is capable of full color display. For example, by forming EL layers containing at least a light emitting layer separately for each light emitting color, a display device capable of full color display can be manufactured. Alternatively, for example, a display device capable of full color display can be manufactured by providing a colored layer (also called a color filter) on an EL layer that emits white light.

A structure in which light emitting layers of each color (for example, blue (B), green (G), and red (R)) are separately formed or individually applied is sometimes called a SBS (Side By Side) structure. Additionally, a light-emitting device that can emit white light is sometimes called a white light-emitting device.

When manufacturing a display device having a plurality of light-emitting elements emitting different colors, it is necessary to form each light-emitting layer emitting different colors in an island shape. Also, when manufacturing a display device including a white light-emitting element, it is preferable to form the light-emitting layer in an island shape because leakage current that may occur between adjacent light-emitting elements via the light-emitting layer can be reduced.

In addition, in this specification and the like, the island shape refers to a state in which two or more layers formed using the same material in the same process are physically separated. For example, an island-shaped light emitting layer refers to a state in which the light emitting layer and the adjacent light emitting layer are physically separated.

For example, an island-shaped light emitting layer can be formed by vacuum deposition using a metal mask. However, with this method, the shape and position of the island-shaped light emitting layer are affected by various influences such as precision of the metal mask, misalignment between the metal mask and the substrate, bending of the metal mask, and expansion of the outline of the film to be formed due to vapor scattering. may differ from that at design time. Therefore, it is difficult to achieve high resolution and high resolution of the display device. Additionally, during deposition, the outline of the layer may become blurred and the thickness of the end portion may become thinner. In other words, the island-shaped light emitting layer may have variations in thickness depending on the location. Additionally, when manufacturing a large-sized, high-resolution, or high-definition display device, there is a risk that the dimensional accuracy of the metal mask may be low or may be deformed due to heat, etc., thereby lowering the manufacturing yield.

Therefore, when manufacturing a display device of one type of the present invention, the light emitting layer is processed into a fine pattern by photolithography without using a shadow mask such as a metal mask. Specifically, after forming a pixel electrode for each subpixel, a light emitting layer is formed over the plurality of pixel electrodes. Thereafter, the light emitting layer is processed by photolithography to form an island-shaped light emitting layer for one pixel electrode. As a result, the light emitting layer is divided for each subpixel, and an island-shaped light emitting layer can be formed for each subpixel.

Additionally, when processing the light-emitting layer into an island shape, a structure in which the light-emitting layer is processed using a photolithography method directly above the light-emitting layer is considered. In the case of the above structure, there are cases where damage, for example, damage due to processing, is applied to the light-emitting layer, resulting in a significant decrease in reliability. Therefore, when manufacturing a display device of one form of the present invention, in addition to the light-emitting layer as the EL layer, a functional layer located above the light-emitting layer, such as a carrier blocking layer, a carrier transport layer, or a carrier injection layer, more specifically, a hole blocking layer, is used. It is preferable to use a method of forming a mask layer on the layer, electron transport layer, or electron injection layer, and processing the light emitting layer and the functional layer into an island shape. By applying the above method, a highly reliable display device can be provided. By having a functional layer between the light-emitting layer and the mask layer, exposure of the light-emitting layer to the outermost surface during the manufacturing process of the display device can be suppressed, thereby reducing damage to the light-emitting layer.

In addition, in this specification and the like, the term mask film and mask layer refers to at least a light emitting layer, more specifically, a film located above a layer that is processed into an island shape among the layers constituting the EL layer and having the function of protecting the light emitting layer during the manufacturing process. Indicates the floor. Additionally, the mask film can be called a sacrificial film or a protective film, and the mask layer can be called a sacrificial layer or a protective layer.

The EL layer may have a functional layer below the light-emitting layer in addition to above the light-emitting layer. Here, when the light-emitting layer is processed into an island shape, a functional layer located below the light-emitting layer (for example, a carrier injection layer, a carrier transport layer, or a carrier blocking layer, more specifically, a hole injection layer, a hole transport layer, or an electron blocking layer) etc.) is preferably processed into an island shape in the same pattern as the light emitting layer. By processing the layer located below the light-emitting layer into an island shape in the same pattern as the light-emitting layer, leakage current that may occur between adjacent subpixels (sometimes called horizontal leakage current, transverse leakage current, or lateral leakage current) is reduced. It can be reduced. For example, when a hole injection layer is commonly used between adjacent subpixels, a horizontal leakage current may occur due to the hole injection layer. On the other hand, in the display device of one form of the present invention, since the hole injection layer can be processed into an island shape in the same pattern as the light emitting layer, the horizontal leakage current between adjacent subpixels is substantially non-existent or the horizontal leakage current is very small. can do.

Here, the EL layer is preferably provided to cover the top and side surfaces of the pixel electrode. This makes it easier to increase the aperture ratio compared to a configuration in which the end of the EL layer is located inside the end of the pixel electrode.

Additionally, the pixel electrode preferably has a structure in which a plurality of layers containing different materials are stacked. For example, when the display device is a top emission type and the pixel electrode is a two-layer stacked structure of a first conductive layer and a second conductive layer on the first conductive layer, the first conductive layer is connected to the second conductive layer. In comparison, it can be made into a layer with a high reflectivity for visible light. In addition, when the functional layer located below the light-emitting layer includes, for example, at least one of a hole injection layer and a hole transport layer, and the second conductive layer is in contact with the functional layer, the second conductive layer is one layer lower than the first conductive layer. The function can be made into a large layer. That is, when the pixel electrode functions as an anode, the second conductive layer can be a layer with a larger work function than the first conductive layer. This allows a light-emitting device with high light extraction efficiency and low driving voltage.

In this specification and the like, visible light refers to light with a wavelength of 400 nm or more and less than 750 nm. Additionally, the reflectance for visible light refers to the reflectance for light within a predetermined range of wavelengths between 400 nm and less than 750 nm. For example, there are cases where the average or maximum reflectance for all wavelengths of light between 400 nm and 750 nm is taken as the reflectance for visible light. Additionally, among wavelengths between 400 nm and 750 nm, the reflectance for light of a specific wavelength may be determined as the reflectance for visible light.

On the other hand, if the pixel electrode is composed of a plurality of layers made of different materials stacked, for example, the pixel electrode may deteriorate due to a reaction between the plurality of layers. For example, when a film formed after forming a pixel electrode is removed by a wet etching method in the method of manufacturing a display device of one type of the present invention, the chemical liquid may come into contact with the pixel electrode. If the pixel electrode has a structure in which a plurality of layers are stacked, galvanic corrosion may occur when the plurality of layers come into contact with a chemical solution. As a result, at least one of the layers constituting the pixel electrode may deteriorate. As a result, the yield of the display device may decrease. Additionally, the reliability of the display device may decrease.

Therefore, in one embodiment of the present invention, the second conductive layer is formed to cover the top and side surfaces of the first conductive layer. Accordingly, for example, even when the film formed after forming the pixel electrode including the first conductive layer and the second conductive layer is removed by wet etching, it is possible to prevent the chemical solution from coming into contact with the first conductive layer. Therefore, for example, the occurrence of galvanic corrosion in the pixel electrode can be suppressed. As a result, one type of display device of the present invention can be manufactured using a high-yield method. Additionally, the display device of one embodiment of the present invention can suppress the occurrence of defects and provide a highly reliable display device.

Additionally, it is not necessary to separately form all the layers constituting the EL layer in light-emitting devices each emitting light of different colors, and some layers can be formed through the same process. In the method of manufacturing a display device of one embodiment of the present invention, some of the layers constituting the EL layer are formed in an island shape for each color, then at least part of the mask layer is removed, and the remaining layer constituting the EL layer (referred to as a common layer) is formed in an island shape for each color. in some cases) and a common electrode (can also be referred to as an upper electrode) are shared by each color, that is, they are formed as one film. For example, the carrier injection layer and common electrode can be formed to be shared by each color.

Meanwhile, the carrier injection layer is often a layer with relatively high conductivity among the EL layers. Therefore, there is a risk that the light emitting element may be short-circuited if the carrier injection layer contacts the side surface of a portion of the EL layer formed in an island shape or the side surface of the pixel electrode. Additionally, even in the case where the carrier injection layer is provided in an island shape and the common electrode is formed in common for each color, there is a risk that the light emitting element may be short-circuited if the common electrode and the side surface of the EL layer or the side surface of the pixel electrode come into contact.

Therefore, the display device of one embodiment of the present invention has an insulating layer that covers at least the side surface of the island-shaped light emitting layer. Additionally, the insulating layer preferably covers a portion of the upper surface of the island-shaped light emitting layer.

As a result, it is possible to prevent at least some of the EL layers formed in an island shape and the pixel electrode from contacting the carrier injection layer and the common electrode. Therefore, short-circuiting of the light-emitting device can be suppressed and the reliability of the light-emitting device can be increased.

When viewed in cross section, the end of the insulating layer preferably has a tapered shape with a taper angle of less than 90°. This can prevent disconnection of the common layer and common electrode provided on the insulating layer. Therefore, poor connection due to disconnection can be suppressed. In addition, the common electrode is locally thinned due to the step, thereby suppressing an increase in electrical resistance.

In this specification and the like, disconnection refers to a phenomenon in which a layer, film, or electrode is divided due to the shape of the surface to be formed, such as a step, or a portion with a thin film thickness is formed locally.

In this way, the island-shaped light emitting layer produced by the manufacturing method of one type of display device of the present invention is not formed using a fine metal mask, but is formed by forming the light emitting layer over the entire surface and then processing it. Therefore, it is possible to realize a high-definition display device or a high-aperture-ratio display device, which has been difficult to realize until now. Additionally, since the light-emitting layer can be formed separately in each color, a display device that is very clear, has high contrast, and has high display quality can be realized. Additionally, by providing a mask layer on the light emitting layer, the reliability of the light emitting device can be improved by reducing damage to the light emitting layer during the manufacturing process of the display device.

In addition, the distance between adjacent light-emitting elements is difficult to keep below 10 μm using, for example, a formation method using a fine metal mask, but when a method using a photolithography method of one form of the present invention is used, the distance between adjacent light-emitting elements is reduced in a process on a glass substrate. The distance, the distance between adjacent EL layers, or the distance between adjacent pixel electrodes can be narrowed to less than 10 μm, less than 5 μm, less than 3 μm, less than 2 μm, less than 1.5 μm, less than 1 μm, or less than 0.5 μm. Additionally, for example, by using an exposure device for LSI, in a process on a silicon substrate, the distance between adjacent light-emitting elements, the distance between adjacent EL layers, or the distance between adjacent pixel electrodes can be set to, for example, 500 nm or less, 200 nm or less, or 100 nm. It can be narrowed down to 50nm or less. As a result, the area of the non-emission area that may exist between two light-emitting devices can be greatly reduced, and the aperture ratio can be brought close to 100%. For example, in the display device according to one embodiment of the present invention, the aperture ratio may be 40% or more, 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more, and may be less than 100%.

Additionally, by increasing the aperture ratio of the display device, the reliability of the display device can be improved. More specifically, when using an organic EL element and using the lifespan of a display device with an aperture ratio of 10% as a standard, the lifespan of a display device with an aperture ratio of 20%, that is, twice the standard, is about 3.25 times longer, The lifespan of a display device with an aperture ratio of 40%, that is, an aperture ratio four times the standard, is approximately 10.6 times longer. As the aperture ratio is improved in this way, the current density flowing through the organic EL element can be lowered, thereby improving the lifespan of the display device. In the display device of one embodiment of the present invention, the aperture ratio can be improved, so the display quality of the display device can be improved. In addition, as the aperture ratio of the display device is improved, excellent effects are achieved, such as significantly improving the reliability of the display device, especially its lifespan.

Additionally, the pattern of the light emitting layer itself can be made much smaller than when a fine metal mask is used. Also, for example, when a metal mask is used to separate the light-emitting layers, the thickness varies at the center and ends of the pattern, so the effective area that can be used as a light-emitting area becomes smaller with respect to the entire pattern area. On the other hand, in the above manufacturing method, since the film formed to a uniform thickness is processed, an island-shaped light emitting layer can be formed to a uniform thickness. Therefore, even if it is a fine pattern, almost the entire area can be used as a light emitting area. Therefore, it is possible to manufacture a display device that combines high definition and high aperture ratio. Additionally, miniaturization and weight reduction of the display device can be realized.

Specifically, the resolution of the display device of one embodiment of the present invention is, for example, 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, further preferably 6000 ppi or more, and may be 20000 ppi or less or 30000 ppi or less.

[Configuration Example 1]

1 is a plan view showing a configuration example of the display device 100. The display device 100 has a pixel portion 107 in which a plurality of pixels 108 are arranged in a matrix. The pixel 108 has a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B. Figure 1 shows subpixels 110 in 2 rows and 6 columns, and these constitute the pixels 108 in 2 rows and 2 columns.

In this specification and the like, for example, when explaining matters common to the subpixel 110R, subpixel 110G, and subpixel 110B, it may be referred to as subpixel 110. When describing other components identified by the alphabet, common matters may be explained using symbols omitting the alphabet.

The subpixel 110R represents red light, the subpixel 110G represents green light, and the subpixel 110B represents blue light. This makes it possible to display an image on the pixel portion 107. Therefore, the pixel portion 107 can be referred to as a display portion. Additionally, in this embodiment, the three-color subpixels of red (R), green (G), and blue (B) are used as examples, but the three colors of yellow (Y), cyan (C), and magenta (M) are used as examples. You may use subpixels, etc. Additionally, the type of subpixel is not limited to three, but may be four or more. The four subpixels include four color subpixels of R, G, B, and white (W), four color subpixels of R, G, B, and Y, and R, G, B, and infrared light (IR). ), 4 subpixels, etc.

Additionally, it may be said that a stripe arrangement is applied to the pixel 108 shown in FIG. 1. Additionally, the arrangement method that can be applied to the pixel 108 is not limited to this, and an arrangement method such as a stripe array, S stripe array, delta array, Bayer array, or zigzag array may be applied, or a pentile array or diamond array. etc. can also be applied.

In this specification, etc., there are cases where the row direction is the X direction and the column direction is the Y direction. The X and Y directions intersect, for example perpendicularly.

Figure 1 shows an example in which subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction. Additionally, subpixels of different colors may be arranged side by side in the Y direction, and subpixels of the same color may be arranged side by side in the X direction.

An area 141 and a connection portion 140 are provided outside the pixel portion 107, and the area 141 is provided between the pixel portion 107 and the connection portion 140. The area 141 is provided with an EL layer 113. Additionally, the connection portion 140 is provided with a conductive layer 111C.

Figure 1 shows an example in which the region 141 and the connection portion 140 are located on the right side of the pixel portion 107 when viewed from a plan view, but the location of the region 141 and the location of the connection portion 140 are not particularly limited. . The area 141 and the connection portion 140 may be provided on at least one of the upper, right, left, and lower portions of the pixel portion 107 when viewed from a plan view, and may surround four sides of the pixel portion 107. It may be provided. The upper surface shape of the area 141 and the connection portion 140 may be strip-shaped, L-shaped, U-shaped, or border-shaped. Additionally, the area 141 and the connection portion 140 may be one or more.

FIG. 2A is a cross-sectional view taken along the dashed-dotted line A1 - A2 shown in FIG. 1, and is a cross-sectional view showing an example of the configuration of the pixel 108 provided in the pixel portion 107. As shown in FIG. 2 (A), the display device 100 includes an insulating layer 101, a conductive layer 102 on the insulating layer 101, and an insulating layer 101 and a conductive layer 102. It includes an insulating layer 103, an insulating layer 104 on the insulating layer 103, and an insulating layer 105 on the insulating layer 104. An insulating layer 101 is provided on a substrate (not shown). The insulating layer 105, 104, and 103 are provided with an opening reaching the conductive layer 102, and a plug 106 is provided to fill the opening.

In the pixel portion 107, a light emitting element 130 is provided on the insulating layer 105 and the plug 106. A protective layer 131 is provided to cover the light emitting device 130. The substrate 120 is bonded to the protective layer 131 by a resin layer 122. Additionally, an insulating layer 125 is provided between adjacent light emitting devices 130 and an insulating layer 127 is provided on the insulating layer 125.

In FIG. 2 (A), a plurality of cross-sections of the insulating layer 125 and 127 are shown, but when the display device 100 is viewed from the top, the insulating layer 125 and the insulating layer 127 are each one. It is connected. That is, the display device 100 can be configured to have, for example, one insulating layer 125 and one insulating layer 127. Additionally, the display device 100 may have a plurality of insulating layers 125 separated from each other, and may also have a plurality of insulating layers 127 separated from each other.

In Figure 2 (A), the light-emitting device 130 includes a light-emitting device 130R, a light-emitting device 130G, and a light-emitting device 130B. The light-emitting element 130R, the light-emitting element 130G, and the light-emitting element 130B emit light of different colors. For example, the light-emitting device 130R may emit red light, the light-emitting device 130G may emit green light, and the light-emitting device 130B may emit blue light. Additionally, the light-emitting element 130R, the light-emitting element 130G, or the light-emitting element 130B may emit light such as cyan, magenta, yellow, white, or infrared light.

The display device of one form of the present invention can be, for example, a top emission type (top emission type) that emits light in the opposite direction to the substrate on which the light emitting element is formed.

As the light emitting device 130, it is desirable to use, for example, an Organic Light Emitting Diode (OLED) or a Quantum-dot Light Emitting Diode (QLED). Light-emitting materials included in the light-emitting element 130 include, for example, a material that fluoresces (fluorescent material), a material that exhibits phosphorescence (phosphorescent material), an inorganic compound (e.g., quantum dot material), and thermal activation. There are materials that exhibit delayed fluorescence (Thermally Activated Delayed Fluorescence (TADF) materials). Additionally, an LED such as a micro LED (Light Emitting Diode) may be used as the light emitting device 130.

The light emitting element 130R includes a conductive layer 111R on the plug 106 and the insulating layer 105, a conductive layer 112R covering the top and side surfaces of the conductive layer 111R, and a conductive layer 112R. It includes an EL layer 113R covering the top and side surfaces, a common layer 114 on the EL layer 113R, and a common electrode 115 on the common layer 114. Here, the pixel electrode of the light emitting device 130R is composed of the conductive layer 111R and the conductive layer 112R. Additionally, in the light emitting element 130R, the EL layer 113R and the common layer 114 may be collectively referred to as the EL layer.

The light emitting element 130G includes a conductive layer 111G on the plug 106 and the insulating layer 105, a conductive layer 112G covering the top and side surfaces of the conductive layer 111G, and a conductive layer 112G. It includes an EL layer 113G covering the top and side surfaces, a common layer 114 on the EL layer 113G, and a common electrode 115 on the common layer 114. Here, the pixel electrode of the light emitting device 130G is composed of the conductive layer 111G and the conductive layer 112G. Additionally, in the light emitting element 130G, the EL layer 113G and the common layer 114 may be collectively referred to as the EL layer.

The light emitting element 130B includes a conductive layer 111B on the plug 106 and the insulating layer 105, a conductive layer 112B covering the top and side surfaces of the conductive layer 111B, and a conductive layer 112B. It includes an EL layer 113B covering the top and side surfaces, a common layer 114 on the EL layer 113B, and a common electrode 115 on the common layer 114. Here, the pixel electrode of the light emitting device 130B is composed of the conductive layer 111B and the conductive layer 112B. Additionally, in the light emitting element 130B, the EL layer 113B and the common layer 114 may be collectively referred to as the EL layer.

One of the pixel electrode and the common electrode included in the light emitting element functions as an anode, and the other functions as a cathode. Hereinafter, unless otherwise specified, the pixel electrode may function as an anode and the common electrode may function as a cathode.

The EL layer 113R, EL layer 113G, and EL layer 113B include at least a light emitting layer. For example, the EL layer 113R may include a light-emitting layer that emits red light, the EL layer 113G may include a light-emitting layer that emits green light, and the EL layer 113B may have a light-emitting layer that emits blue light. there is. The EL layer 113R, EL layer 113G, or EL layer 113B may emit light such as cyan, magenta, yellow, white, or infrared light.

The EL layer 113R, EL layer 113G, and EL layer 113B are spaced apart from each other. By providing the EL layer 113 in an island shape for each light-emitting element 130, leakage current between adjacent light-emitting elements 130 can be suppressed. As a result, crosstalk caused by unintended light emission can be suppressed, making it possible to realize a display device with extremely high contrast. In particular, a display device with high current efficiency can be realized when luminance is low.

The island-shaped EL layer 113 can be formed by forming an EL film and processing the EL film using, for example, a photolithography method. For example, the EL layer 113R is formed by depositing and processing an EL film to become the EL layer 113R, the EL layer 113G is formed by depositing and processing an EL film to become the EL layer 113G, and the EL layer ( The EL layer 113B can be formed by depositing and processing the EL film 113B).

The EL layer 113 is provided to cover the top and side surfaces of the pixel electrode of the light emitting element 130. This makes it easier to increase the aperture ratio of the display device 100 compared to a configuration in which the end of the EL layer 113 is located inside the end of the pixel electrode. Additionally, by covering the side surface of the pixel electrode of the light-emitting element 130 with the EL layer 113, contact between the pixel electrode and the common electrode 115 can be suppressed, and thus short-circuiting of the light-emitting element 130 can be suppressed. . Additionally, the distance between the light emitting area of the EL layer 113, that is, the area where the pixel electrode, EL layer 113, and common electrode 115 overlap each other, and the end of the EL layer 113 can be increased. Since the end of the EL layer 113 may be damaged during processing, the reliability of the light-emitting element 130 may be improved by using an area away from the end of the EL layer 113 as a light-emitting area. .

In addition, in the display device of one embodiment of the present invention, the pixel electrode of the light-emitting element has a structure in which a plurality of layers are stacked. For example, in the example shown in (A) of FIG. 2, the pixel electrode of the light emitting device 130 is configured by stacking the conductive layers 111 and 112. For example, when the display device 100 is a top emission type and the pixel electrode of the light emitting element 130 functions as an anode, the conductive layer 111 is a layer with a higher reflectance for visible light than the conductive layer 112. , the conductive layer 112 can be a layer with a larger work function than the conductive layer 111. The higher the reflectance of visible light of the pixel electrode, the more the light emitted by the EL layer 113 can be suppressed from passing through the pixel electrode, for example. Therefore, when the display device 100 is a top emission type, the EL layer 113 ) increases the extraction efficiency of the light emitted. Additionally, when the pixel electrode functions as an anode, the larger the work function of the pixel electrode, the easier it is to inject holes into the EL layer 113, so the driving voltage of the light emitting device can be lowered. In this way, by making the pixel electrode of the light-emitting device 130 a stack of the conductive layer 111 with a high reflectance for visible light and the conductive layer 112 with a large work function, the light-emitting device 130 has a high light extraction efficiency. It can be made into a light emitting device with a high and low driving voltage.

When the conductive layer 111 is a layer with a higher reflectance for visible light than the conductive layer 112, it is preferable that the reflectance for visible light of the conductive layer 111 is, for example, 40% or more and 100% or less, It is more desirable to set it to 70% or more and 100% or less. Additionally, the conductive layer 112 can be an electrode (also called a transparent electrode) that has transparency to visible light.

In this specification and the like, a transparent electrode refers to an electrode that has a transmittance of 40% or more to visible light.

In addition, the conductive layer 111 included in the light emitting element 130 is a layer with a high reflectivity for the light emitted by the EL layer 113. For example, when the EL layer 113 emits infrared light, the conductive layer 111 can be a layer with a high reflectivity for infrared light. Additionally, when the pixel electrode of the light emitting device 130 functions as a cathode, the conductive layer 112 can be, for example, a layer with a smaller work function than the conductive layer 111.

On the other hand, if the pixel electrode is composed of a plurality of layers stacked, for example, the pixel electrode may deteriorate due to a reaction between the plurality of layers. For example, as will be described in detail later, when the film formed after forming the pixel electrode is removed by a wet etching method in the manufacture of the display device 100, the chemical liquid may come into contact with the pixel electrode. If the pixel electrode has a structure in which a plurality of layers are stacked, galvanic corrosion may occur when the plurality of layers come into contact with a chemical solution. As a result, at least one of the layers constituting the pixel electrode may deteriorate. As a result, the yield of the display device may decrease. Additionally, the reliability of the display device may decrease.

Therefore, in the display device 100, the conductive layer 112 is formed to cover the top and side surfaces of the conductive layer 111. Accordingly, for example, even when the film formed after the formation of the pixel electrode including the conductive layer 111 and the conductive layer 112 is removed by wet etching, it is possible to prevent the chemical solution from coming into contact with the conductive layer 111. . Therefore, for example, the occurrence of galvanic corrosion in the pixel electrode can be suppressed. Therefore, the display device 100 can be manufactured using a high-yield method. Additionally, since defects in the display device 100 can be suppressed, the display device 100 can be made into a highly reliable display device.

As the conductive layer 111, for example, a metal material can be used. For example, aluminum (Al), magnesium (Mg), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium. (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt) ), silver (Ag), yttrium (Y), or neodymium (Nd), or an alloy containing an appropriate combination thereof can be used. As alloy materials, for example, alloys containing aluminum (aluminum alloys) such as alloys of aluminum, nickel, and lanthanum (Al-Ni-La), and alloys of silver and magnesium or alloys of silver, palladium and copper (Ag) An alloy containing silver, such as -Pd-Cu, also referred to as APC, can be used.

As the conductive layer 112, an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon may be used. Examples include indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, gallium-containing zinc oxide, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, gallium-containing indium zinc oxide, aluminum. It is preferable to use a conductive oxide containing one or more of indium zinc oxide, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, 4.0 eV or more, so it can be suitably used as the conductive layer 112 when the pixel electrode functions as an anode.

Although details will be described later, the conductive layer 111 may be composed of a stack of multiple layers containing different materials, and the conductive layer 112 may be composed of a stack of multiple layers including different materials. In this case, the conductive layer 111 may include a layer using a material that can be used for the conductive layer 112, such as conductive oxide. Additionally, the conductive layer 112 may include a layer using a material that can be used for the conductive layer 111, such as a metal material. For example, in the case where two or more layers of the conductive layer 112 are stacked, the layer in contact with the conductive layer 111 can be a layer using a material that can be used for the conductive layer 111, such as a metal material.

Here, the end of the conductive layer 111 may have a tapered shape. Specifically, the end of the conductive layer 111 preferably has a tapered shape with a taper angle of less than 90°. In this case, the conductive layer 112 provided along the side of the conductive layer 111 also has a tapered shape. Accordingly, the EL layer 113 provided along the side of the conductive layer 112 also has a tapered shape. By making the side surface of the conductive layer 112 tapered, the coverage of the EL layer 113 provided along the side surface of the conductive layer 112 can be improved.

In Figure 2 (A), an insulating layer (also called an embankment or structure) covering the top end of the conductive layer 112R was not provided between the conductive layer 112R and the EL layer 113R. Additionally, an insulating layer covering the top end of the conductive layer 112G was not provided between the conductive layer 112G and the EL layer 113G. Additionally, between the conductive layer 112B and the EL layer 113B, an insulating layer covering the top end of the conductive layer 112B was not provided. Therefore, the distance between adjacent light emitting devices 130 can be made very narrow. Therefore, it can be used as a high-definition or high-resolution display device. Additionally, since a mask for forming the insulating layer is not required, the manufacturing cost of the display device can be reduced.

Additionally, by providing a structure in which an insulating layer covering the end of the conductive layer 112 is not provided between the conductive layer 112 and the EL layer 113, light emission from the EL layer 113 can be efficiently extracted. Accordingly, the display device 100 can have very small viewing angle dependence. By reducing the viewing angle dependence, the visibility of the image on the display device 100 can be improved. For example, in the display device 100, the viewing angle (the maximum angle at which a constant contrast ratio is maintained when the screen is viewed from an oblique direction) can be set to 100° or more and less than 180°, and preferably 150° or more and 170° or less. Additionally, the above-described viewing angle can be applied to each of the top and bottom and left and right.

The insulating layer 101, 103, and 105 function as interlayer insulating layers. As the insulating layer 101, the insulating layer 103, and the insulating layer 105, various inorganic insulating films such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be suitably used, and specific examples include: For example, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, a silicon nitride film, or a silicon nitride oxide film can be used.

In addition, in this specification and the like, oxynitride refers to a material whose composition contains more oxygen than nitrogen, and nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, when it is described as silicon oxynitride, it refers to a material whose composition contains more oxygen than nitrogen, and when it is described as silicon nitride oxide, it refers to a material whose composition contains more nitrogen than oxygen.

For example, the insulating layer 104 functions as a barrier layer that prevents impurities such as water from entering the light emitting device 130. As the insulating layer 104, for example, a film such as a silicon nitride film, an aluminum oxide film, or a hafnium oxide film, which is more difficult for hydrogen or oxygen to diffuse than a silicon oxide film, can be used.

The film thickness of the insulating layer 105 in the area that does not overlap the conductive layer 111 may be thinner than the film thickness of the insulating layer 105 in the area that overlaps the conductive layer 111. That is, the insulating layer 105 may have concave portions in areas that do not overlap the conductive layer 111. The concave portion is formed, for example, due to the formation process of the conductive layer 111.

The conductive layer 102 functions as a wiring. The conductive layer 102 is electrically connected to the light emitting element 130 through the plug 106.

Various conductive materials can be used for the conductive layer 102 and the plug 106, for example, aluminum (Al), magnesium (Mg), titanium (Ti), chromium (Cr), nickel (Ni), and copper (Cu). ), yttrium (Y), zirconium (Zr), tin (Sn), zinc (Zn), silver (Ag), platinum (Pt), gold (Au), molybdenum (Mo), tantalum (Ta), Alternatively, a metal such as tungsten (W), or an alloy (APC, etc.) containing it as a main component may be used. Additionally, oxides such as tin oxide or zinc oxide may be used for the conductive layer 102 and plug 106.

A single structure (a structure including only one light-emitting unit) can be applied to the light-emitting device 130.

As described above, the EL layer 113R, EL layer 113G, and EL layer 113B include at least a light emitting layer. For example, the EL layer 113R includes a light-emitting layer that emits red light, the EL layer 113G includes a light-emitting layer that emits green light, and the EL layer 113B includes a light-emitting layer that emits blue light. It can be done by configuration.

Additionally, the EL layer 113R, EL layer 113G, and EL layer 113B include a hole injection layer, a hole transport layer, a hole blocking layer, a charge generation layer (also called an intermediate layer), an electron blocking layer, an electron transport layer, and an electron layer, respectively. It may also include one or more injection layers.

In this specification and the like, among the layers included in the EL layer, layers other than the light-emitting layer are referred to as functional layers.

For example, when the pixel electrode of the light emitting element 130 functions as an anode and the common electrode 115 functions as a cathode, the EL layer 113R, EL layer 113G, and EL layer 113B perform hole injection. layer, a hole transport layer, a light emitting layer, and an electron transport layer may be included in this order. That is, the EL layer 113 can be configured, for example, in which a first functional layer including a hole injection layer and a hole transport layer, a light emitting layer, and a second functional layer including an electron transport layer are stacked in this order from the bottom. . Additionally, an electron blocking layer may be included between the hole transport layer and the light emitting layer. Additionally, a hole blocking layer may be included between the electron transport layer and the light emitting layer. Additionally, an electron injection layer may be included on the electron transport layer. Additionally, the first functional layer may include one of the hole injection layer and the hole transport layer and may not include the other layer. Additionally, the second functional layer may include an electron injection layer or does not need to include an electron transport layer.

Also, for example, when the pixel electrode of the light emitting element 130 functions as a cathode and the common electrode 115 functions as an anode, the EL layer 113R, EL layer 113G, and EL layer 113B An injection layer, an electron transport layer, a light emitting layer, and a hole transport layer may be included in this order. That is, the EL layer 113 can be configured, for example, in which a first functional layer including an electron injection layer and an electron transport layer, a light emitting layer, and a second functional layer including a hole transport layer are stacked in this order from the bottom. . Additionally, a hole blocking layer may be included between the electron transport layer and the light emitting layer. Additionally, an electron blocking layer may be included between the hole transport layer and the light emitting layer. Additionally, a hole injection layer may be included on the hole transport layer. Additionally, the first functional layer may include one of the electron injection layer and the electron transport layer and may not include the other. Additionally, the second functional layer may include a hole injection layer or may not include a hole transport layer.

In this way, the EL layer 113R, 113G, and EL layer 113B preferably include a light-emitting layer and a carrier transport layer on the light-emitting layer. Additionally, the EL layer 113R, 113G, and EL layer 113B preferably include a light-emitting layer and a carrier blocking layer on the light-emitting layer. Additionally, the EL layer 113R, EL layer 113G, and EL layer 113B preferably include a light-emitting layer, a carrier blocking layer on the light-emitting layer, and a carrier transport layer on the carrier blocking layer. Since the surfaces of the EL layer 113R, EL layer 113G, and EL layer 113B are exposed during the manufacturing process of the display device, by providing one or both of the carrier transport layer and the carrier blocking layer on the light emitting layer, the light emitting layer is the most effective. Damage to the light-emitting layer can be reduced by suppressing exposure to the outer surface. Thereby, the reliability of the light emitting device can be increased.

The heat resistance temperature of the compounds contained in the EL layer (113R), EL layer (113G), and EL layer (113B) is preferably 100°C or higher and 180°C or lower, more preferably 120°C or higher and 180°C or lower, respectively, and 140°C. It is more preferable that it is 180°C or lower. For example, the glass transition point (Tg) of these compounds is preferably 100°C or higher and 180°C or lower, more preferably 120°C or higher and 180°C or lower, and even more preferably 140°C or higher and 180°C or lower.

In particular, it is desirable that the heat resistance temperature of the functional layer provided on the light-emitting layer is high. In addition, it is more preferable that the heat resistance temperature of the functional layer provided in contact with the light emitting layer is high. If the heat resistance of the functional layer is high, the light-emitting layer can be effectively protected and damage to the light-emitting layer can be reduced.

The functional layer provided on the light-emitting layer is an organic compound having a heteroaromatic ring skeleton selected from a pyridine ring, a diazine ring, and a triazine ring and a bicarbazole skeleton, or a condensed heteroaromatic compound having a pyridine ring or a diazine ring. The organic compound having a ring skeleton and a bicarbazole skeleton preferably includes an organic compound having a Tg of 100°C or higher and 180°C or lower, preferably 120°C or higher and 180°C or lower, and more preferably 140°C or higher and 180°C or lower. . A functional layer using such an organic compound may have one or both of the functions of a hole blocking layer and an electron transport layer. In addition, the functional layer using such an organic compound is not limited to being located above the light-emitting layer (on the upper electrode side), and may be provided below the light-emitting layer (on the lower electrode side).

Specific examples of such organic compounds include 2-{3-[3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviated name: 2mPCCzPDBq), 2-{3-[2-(9-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline ( Abbreviated name: 2mPCCzPDBq-02), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-3,3'-bi-9H- Carbazole (abbreviated name: mPCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H -Carbazole (abbreviated name: mPCCzPTzn-02), 9-[4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-3,3'- Bi-9H-carbazole (abbreviated name: PCCzPTzn), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-3,3'-bi-9H- Carbazole (abbreviated name: PCCzTzn), 9-[3-(4,6-diphenyl-pyrimidin-2-yl)phenyl]-9'-phenyl-3,3'-bi-9H-carbazole (abbreviated name: 2PCCzPPm), 9-(4,6-diphenyl-pyrimidin-2-yl)-9'-phenyl-2,3'-bi-9H-carbazole (abbreviated name: 2PCCzPm), 9-(4,6- Diphenylpyrimidin-2-yl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviated name: 2PCCzPm-02), 4-(9'-phenyl[2,3'-bi-9H -carbazole]-9-yl)benzofuro[3,2-d]pyrimidine (abbreviated name: 4PCCzBfpm-02), and 4-{3-[3-(9-phenyl-9H-carbazole-3- 1)-9H-carbazol-9-yl]phenyl}benzo[h]quinazoline, etc. are mentioned.

Additionally, it is preferable that the heat resistance temperature of the light-emitting layer is high. As a result, it is possible to prevent damage to the light-emitting layer due to heating, thereby reducing luminous efficiency or shortening its lifespan.

Additionally, the EL layer 113R, EL layer 113G, and EL layer 113B can be configured to include, for example, a first light-emitting unit, a charge generation layer, and a second light-emitting unit.

The second light-emitting unit preferably includes a light-emitting layer and a carrier transport layer on the light-emitting layer. Additionally, the second light emitting unit preferably includes a light emitting layer and a carrier blocking layer on the light emitting layer. Additionally, the second light emitting unit preferably includes a light emitting layer, a carrier blocking layer on the light emitting layer, and a carrier transport layer on the carrier blocking layer. Since the surface of the second light-emitting unit is exposed during the manufacturing process of the display device, by providing one or both of the carrier transport layer and the carrier blocking layer on the light-emitting layer, exposure of the light-emitting layer to the outermost surface is suppressed and damage to the light-emitting layer is reduced. It can be reduced. Thereby, the reliability of the light emitting device can be increased. In addition, when having three or more light-emitting units, it is preferable that the light-emitting unit provided in the uppermost layer has a light-emitting layer and one or both of a carrier transport layer and a carrier blocking layer on the light-emitting layer.

When the pixel electrode of the light emitting element 130 functions as an anode and the common electrode 115 functions as a cathode, the common layer 114 includes at least one of an electron injection layer and an electron transport layer, for example, electron injection Includes layers. Alternatively, the common layer 114 may include a stack of an electron transport layer and an electron injection layer. On the other hand, when the pixel electrode of the light emitting device 130 functions as a cathode and the common electrode 115 functions as an anode, the common layer 114 includes at least one of a hole injection layer and a hole transport layer, for example, a hole injection layer. Includes an injection layer. Alternatively, the common layer 114 may include a hole transport layer and a hole injection layer stacked together. The common layer 114 is shared by the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B.

Additionally, the common electrode 115, like the common layer 114, is shared by the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B.

The common electrode 115 can be formed continuously after the common layer 114 is formed without performing an intermediate process such as etching. For example, after forming the common layer 114 in vacuum, the common electrode 115 can be formed in vacuum without exposing the substrate to the atmosphere. That is, the common layer 114 and the common electrode 115 can be formed through a vacuum integrated process. As a result, the lower surface of the common electrode 115 can be made cleaner than when the common layer 114 is not provided in the display device 100. Therefore, the light emitting device 130 can be made into a light emitting device with high reliability and good characteristics.

In addition, in the example shown in FIG. 2(A), a mask layer 118R is provided on the EL layer 113R included in the light-emitting element 130R, and a mask layer is provided on the EL layer 113G included in the light-emitting element 130G. (118G) is provided, and a mask layer 118B is provided on the EL layer 113B included in the light emitting element 130B. The mask layer 118R is a portion of the remaining mask layer provided in contact with the upper surface of the EL layer 113R when processing the EL layer 113R. Similarly, the mask layer 118G is a portion of the mask layer provided during the formation of the EL layer 113G remaining, and the mask layer 118B is a portion of the mask layer provided during the formation of the EL layer 113B remaining. . In this way, the display device 100 may have a portion of the mask layer used to protect the EL layer remaining during manufacturing. The same material may be used for any two or all of the mask layer 118R, mask layer 118G, and mask layer 118B, or different materials may be used. In addition, hereinafter, the mask layer 118R, the mask layer 118G, and the mask layer 118B may be collectively referred to as the mask layer 118.

In Figure 2(A), one end of the mask layer 118R is aligned or substantially aligned with an end of the EL layer 113R, and the other end of the mask layer 118R is located above the EL layer 113R. Here, the other end of the mask layer 118R preferably overlaps the conductive layer 111R. In this case, the other end of the mask layer 118R is likely to be formed on a substantially flat surface of the EL layer 113R. Also, the same applies to the mask layer 118G and the mask layer 118B. Additionally, the mask layer 118 remains between the upper surface of the EL layer 113, which is processed into an island shape, and the insulating layer 125, for example.

Additionally, when the ends are aligned or substantially aligned, and when the top surfaces coincide or substantially coincide, it can be said that at least a portion of the outline overlaps between the stacked layers when viewed from a plan view. A case where at least part of the outline overlaps between the upper layer and the lower layer includes, for example, a case where the upper layer and the lower layer are processed using the same mask pattern or a portion of the outline is processed using the same mask pattern. However, strictly speaking, the outlines do not overlap, and there are cases where the upper layer is located inside the lower layer or the upper layer is located outside the lower layer. Even in these cases, the ends are substantially aligned or the top shape is substantially Make sure it matches.

The side surfaces of each of the EL layer 113R, EL layer 113G, and EL layer 113B are covered with an insulating layer 125. The insulating layer 127 overlaps the side surfaces of each of the EL layer 113R, EL layer 113G, and EL layer 113B with the insulating layer 125 interposed therebetween.

Additionally, a portion of the upper surfaces of each of the EL layer 113R, EL layer 113G, and EL layer 113B is covered with a mask layer 118. The insulating layer 125 and 127 overlap a portion of the upper surfaces of each of the EL layer 113R, EL layer 113G, and EL layer 113B with the mask layer 118 interposed therebetween.

If a portion of the upper surface and the side surfaces of the EL layer 113R, EL layer 113G, and EL layer 113B are covered with at least one of the insulating layer 125, the insulating layer 127, and the mask layer 118, the common layer By preventing the EL layer 114 and the common electrode 115 from coming into contact with the side surfaces of the EL layer 113R, 113G, and EL layer 113B, short circuiting of the light emitting element 130 can be suppressed. As a result, the reliability of the light emitting device 130 can be increased.

The film thickness of each of the EL layer 113R, EL layer 113G, and EL layer 113B may be different. For example, it is desirable to set the film thickness according to the optical path length that strengthens the light emitted by each of the EL layer 113R, 113G, and EL layer 113B. As a result, a microscopic optical resonator (microcavity) structure can be realized and the color purity of light emitted from the subpixel 110 can be increased.

The insulating layer 125 is preferably in contact with the side surfaces of each of the EL layer 113R, EL layer 113G, and EL layer 113B. This can suppress film peeling of the EL layer 113R, EL layer 113G, and EL layer 113B. As the insulating layer 125 and the EL layer 113R, EL layer 113G, or EL layer 113B come into close contact, adjacent EL layers 113 have the effect of being fixed or adhered to each other by the insulating layer 125. As a result, the reliability of the light emitting device 130 can be increased. Additionally, the production yield of light emitting devices can be increased.

In addition, as shown in FIG. 2 (A), the insulating layer 125 and the insulating layer 127 cover a portion of the upper surface and both sides of the EL layer 113R, EL layer 113G, and EL layer 113B. By covering, peeling of the EL layer 113 can be more appropriately suppressed, and the reliability of the light emitting element 130 can be more appropriately improved. Additionally, the manufacturing yield of the light emitting device 130 can be more appropriately increased.

FIG. 2A shows an example in which a stacked structure of the EL layer 113R, the mask layer 118R, the insulating layer 125, and the insulating layer 127 is positioned on the end of the conductive layer 112R. Similarly, a stacked structure of the EL layer 113G, the mask layer 118G, the insulating layer 125, and the insulating layer 127 is located on the end of the conductive layer 112G, and the EL layer ( A stacked structure of 113B), mask layer 118B, insulating layer 125, and insulating layer 127 is located.

Figure 2(A) shows a configuration in which the end of the conductive layer 112R is covered with the EL layer 113R, and the insulating layer 125 has a region in contact with the side surface of the EL layer 113R. Similarly, the end of the conductive layer 112G is covered with the EL layer 113G, the end of the conductive layer 112B is covered with the EL layer 113B, and the insulating layer 125 covers the side surfaces of the EL layer 113G and the EL layer. It has a region in contact with the side of the layer 113B.

The insulating layer 127 is provided on the insulating layer 125 to fill the concave portion formed in the insulating layer 125. The insulating layer 127 may be configured to overlap a portion of the top surface and the side surface of each of the EL layer 113R, EL layer 113G, and EL layer 113B with the insulating layer 125 interposed therebetween. The insulating layer 127 preferably covers at least a portion of the side surface of the insulating layer 125.

Since adjacent island-shaped layers can be buried by providing the insulating layer 125 and 127, the surface to be formed of the layer provided on the island-shaped layer, specifically the common layer 114 and the common Extreme unevenness of the forming surface of the electrode 115 or the like can be reduced to make it more flat. Therefore, the covering properties of the common layer 114 and the common electrode 115 can be improved.

The common layer 114 and the common electrode 115 are provided on the EL layer 113R, EL layer 113G, EL layer 113B, mask layer 118, insulating layer 125, and insulating layer 127. do. In the stage before providing the insulating layer 125 and 127, an area where the pixel electrode and the island-shaped EL layer 113 are provided and an area where the pixel electrode and the island-shaped EL layer 113 are not provided. A level difference occurs due to (the area between the light emitting elements 130). The display device 100 can flatten the step by having the insulating layer 125 and the insulating layer 127, thereby improving the coverage of the common layer 114 and the common electrode 115. Therefore, poor connection due to disconnection can be suppressed. In addition, the common electrode 115 may be locally thinned due to the step difference, thereby suppressing an increase in electrical resistance.

The upper surface of the insulating layer 127 preferably has a shape with higher flatness, but may include convex portions, convex curves, concave curves, or concave portions. For example, it is desirable that the upper surface of the insulating layer 127 has high flatness and a smooth convex curved shape.

Additionally, in the display device 100, an insulating layer 127 is provided on the insulating layer 125 to fill the concave portion formed in the insulating layer 125. Additionally, an insulating layer 127 is provided between the island-shaped EL layers 113. In other words, the display device 100 includes a process of forming an island-shaped EL layer 113 and then providing an insulating layer 127 to overlap the end of the island-shaped EL layer 113 (hereinafter referred to as process 1). This is applied. Meanwhile, a process different from Process 1 includes forming a pixel electrode into an island shape, then forming an insulating layer covering an end of the pixel electrode, and then forming an island-shaped EL layer 113 on the pixel electrode and the insulating layer. process (hereinafter referred to as process 2).

Process 1 is suitable because it can widen the margin compared to Process 2. More specifically, the process 1 has a wider margin for alignment precision between different patternings than the process 2, and thus a display device with less characteristic variation can be provided. Since the manufacturing method of the display device 100 is a process according to Process 1 above, it is possible to provide a display device with small deviation and high display quality.

Next, examples of materials for the insulating layer 125 and 127 will be described.

The insulating layer 125 may be an insulating layer containing an inorganic material. As the insulating layer 125, for example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used. The insulating layer 125 may have a single-layer structure or a laminated structure. The oxide insulating film includes a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, a yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and A tantalum oxide film, etc. can be mentioned. Examples of the nitride insulating film include a silicon nitride film and an aluminum nitride film. Examples of the oxynitride insulating film include a silicon oxynitride film and an aluminum oxynitride film. Examples of the nitride-oxide insulating film include a silicon nitride-oxide film and an aluminum nitride-oxide film. In particular, aluminum oxide is preferable because it has a high selectivity with the EL layer 113 in etching and has a function of protecting the EL layer 113 in the formation of the insulating layer 127, which will be described later. In particular, by applying an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by the atomic layer deposition (ALD) method to the insulating layer 125, there are few pinholes and the EL layer 113 It is possible to form an insulating layer 125 that has an excellent protective function. Additionally, the insulating layer 125 may have a laminate structure of a film formed by the ALD method and a film formed by the sputtering method. The insulating layer 125 may have a laminate structure of, for example, an aluminum oxide film formed by the ALD method and a silicon nitride film formed by the sputtering method.

The insulating layer 125 preferably functions as a barrier insulating layer against at least one of water and oxygen. Additionally, the insulating layer 125 preferably has a function of suppressing the diffusion of at least one of water and oxygen. Additionally, the insulating layer 125 preferably has a function of trapping or fixing at least one of water and oxygen (also called gettering).

In addition, in this specification and the like, the barrier insulating layer refers to an insulating layer having barrier properties. In this specification and the like, barrier properties are defined as the function of suppressing the diffusion of the corresponding substance (also referred to as low permeability). Or, it has the function of capturing or fixing the corresponding substance.

A configuration in which the insulating layer 125 has a function as a barrier insulating layer or a gettering function, thereby suppressing the intrusion of impurities that may diffuse into the light emitting device 130 from the outside, typically at least one of water and oxygen. This happens. By using the above configuration, a highly reliable light emitting element and a highly reliable display device can be provided.

Additionally, the insulating layer 125 preferably has a low impurity concentration. As a result, it is possible to suppress deterioration of the EL layer 113 due to contamination of impurities from the insulating layer 125 to the EL layer 113. Additionally, by lowering the impurity concentration in the insulating layer 125, barrier properties against at least one of water and oxygen can be improved. For example, the insulating layer 125 preferably has one of the hydrogen concentration and the carbon concentration, preferably both, sufficiently low.

Additionally, the same material can be used for the insulating layer 125, the mask layer 118R, the mask layer 118G, and the mask layer 118B. In this case, the boundary between the mask layer 118R, 118G, and 118B and the insulating layer 125 may become unclear and may not be distinguishable. Therefore, there are cases where any of the mask layer 118R, mask layer 118G, and mask layer 118B and the insulating layer 125 are identified as one layer. That is, one layer is provided in contact with a portion of the top surface and the side surface of each of the EL layer 113R, EL layer 113G, and EL layer 113B, and the insulating layer 127 is provided on at least a portion of the side surface of the one layer. There are cases where it is observed to cover .

The insulating layer 127 provided on the insulating layer 125 has the function of flattening extreme irregularities of the insulating layer 125 formed between adjacent light emitting devices 130. In other words, having the insulating layer 127 has the effect of improving the flatness of the surface forming the common electrode 115.

As the insulating layer 127, an insulating layer containing an organic material can be suitably used. As the organic material, it is preferable to use a photosensitive material, for example, a photosensitive organic resin, and it is preferable to use a photosensitive resin composition containing an acrylic resin. Additionally, in this specification and the like, the term acrylic resin does not refer only to polymethacrylic acid ester or methacrylic resin, but may refer to the entire acrylic polymer in a broad sense.

Additionally, the insulating layer 127 may be made of acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimide amide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenol resin, or Precursors of these resins may be used. Additionally, as the insulating layer 127, organic materials such as polyvinyl alcohol (PVA), polyvinylbutyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin are used. You may use it. Additionally, photoresist may be used as the photosensitive resin. As the photosensitive organic resin, either a positive material or a negative material may be used.

A material that absorbs visible light may be used for the insulating layer 127. By the insulating layer 127 absorbing light from the light emitting device 130, light leakage (stray light) from the light emitting device 130 to the adjacent light emitting device 130 through the insulating layer 127 can be suppressed. there is. As a result, the display quality of the display device can be improved. Additionally, since display quality can be improved without using a polarizer in the display device, the display device can be made lighter and thinner.

Materials that absorb visible light include materials containing pigments such as black, materials containing dyes, resin materials having light absorbing properties such as polyimide, and resin materials (color filter materials) that can be used in the colored layer. . In particular, it is preferable to use a resin material in which two or three or more color filter materials are laminated or mixed because the effect of blocking visible light can be increased. In particular, by mixing color filter materials of three or more colors, a black or close to black resin layer can be obtained.

Additionally, the material used for the insulating layer 127 preferably has a low volumetric shrinkage rate. This makes it easier to form the insulating layer 127 into a desired shape. Additionally, the insulating layer 127 preferably has a low volumetric shrinkage rate after curing. This makes it easier to maintain the shape of the insulating layer 127 in various processes after forming the insulating layer 127. Specifically, the volume shrinkage of the insulating layer 127 after heat curing, light curing, or light curing and heat curing is preferably 10% or less, more preferably 5% or less, and still more preferably 1% or less. . Here, as the volumetric shrinkage rate, one of the volumetric shrinkage rate due to light irradiation and the volumetric shrinkage rate due to heating or the sum of both can be used.

By providing the protective layer 131 on the light emitting device 130, the reliability of the light emitting device 130 can be increased. The protective layer 131 may have a single-layer structure or a laminated structure of two or more layers.

The conductivity of the protective layer 131 does not matter. As the protective layer 131, at least one type of an insulating film, a semiconductor film, or a conductive film can be used.

For example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the protective layer 131 . Specific examples of these inorganic insulating films are as presented in the description of the insulating layer 125. In particular, the protective layer 131 preferably has a nitride insulating film or a nitride oxide insulating film, and more preferably has a nitride insulating film.

Additionally, the protective layer 131 may include In-Sn oxide (also known as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (also known as In-Ga-Zn oxide, IGZO). An inorganic membrane containing can also be used. The inorganic film preferably has a high resistance, and specifically, it preferably has a higher resistance than the common electrode 115. The inorganic film may further contain nitrogen.

Since the protective layer 131 has an inorganic film, oxidation of the common electrode 115 can be suppressed. Additionally, because the protective layer 131 has an inorganic film, impurities such as water and oxygen can be prevented from entering the light emitting device 130. As a result, the light-emitting element 130 can be made into a light-emitting element that is less likely to deteriorate, so the display device 100 can be a highly reliable display device.

When extracting light emitted from the light emitting device 130 through the protective layer 131, the protective layer 131 preferably has high transparency to visible light. For example, ITO, IGZO, and aluminum oxide are each preferred because they are inorganic materials with high transparency to visible light.

As the protective layer 131, for example, a stacked structure of an aluminum oxide film and a silicon nitride film on an aluminum oxide film, or a stacked structure of an aluminum oxide film and an IGZO film on an aluminum oxide film, etc. can be used. By using the above-described laminated structure, it is possible to suppress impurities such as water and oxygen from entering the EL layer 113 side.

Additionally, the protective layer 131 may include an organic film. For example, the protective layer 131 may include both an organic film and an inorganic film. Examples of organic materials that can be used in the protective layer 131 include organic insulating materials that can be used in the insulating layer 127 .

The protective layer 131 may have a two-layer structure formed using different film forming methods. Specifically, the first layer of the protective layer 131 may be formed using an ALD method, and the second layer of the protective layer 131 may be formed using a sputtering method.

A light-shielding layer may be provided on the surface of the substrate 120 on the resin layer 122 side. Additionally, various optical members can be placed outside the substrate 120. Examples of optical members include light diffusion layers such as polarizing plates, retardation plates, and diffusion films, antireflection layers, and light condensing films. In addition, on the outside of the substrate 120, a surface protective layer such as an antistatic film that suppresses the attachment of dust, a water-repellent film that makes it difficult for contamination to adhere, a hard coat film that suppresses damage due to use, or a shock absorbing layer is disposed. It's also good. For example, it is preferable to provide a glass layer or a silica layer (SiO _x layer) as a surface protective layer because the occurrence of surface contamination and damage can be suppressed. Additionally, DLC (diamond like carbon), aluminum oxide (AlO _x ), polyester-based material, or polycarbonate-based material may be used as the surface protective layer. Additionally, it is desirable to use a material with high transmittance to visible light for the surface protective layer. Additionally, it is desirable to use a material with high hardness for the surface protective layer.

The substrate 120 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, or semiconductor. A material that transmits the light is used for the substrate on the side through which light from the light emitting element is extracted. If a flexible material is used for the substrate 120, the flexibility of the display device can be increased. Additionally, a polarizing plate may be used as the substrate 120.

The substrate 120 is made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, and polycarbonate (PC). Resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polychlorinated bichloride resin. Nylidene resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, or cellulose nanofibers can be used. Glass with a thickness sufficient to be flexible may be used for the substrate 120.

Additionally, when a circularly polarizing plate is superimposed on a display device, it is desirable to use a substrate with high optical isotropy as the substrate of the display device. A substrate with high optical isotropy can be said to have small birefringence, and specifically, it can be said to have a small amount of birefringence.

The absolute value of the retardation (phase difference) value of a substrate with high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

Films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

Additionally, when a film is used as a substrate, there is a risk that the film absorbs water, causing shape changes such as wrinkles in the display device. Therefore, it is desirable to use a film with a low water absorption rate as the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably a film with a water absorption rate of 0.1% or less, and even more preferably a film with a water absorption rate of 0.01% or less.

As the resin layer 122, various curing adhesives can be used, such as light curing adhesives such as ultraviolet curing adhesives, reaction curing adhesives, heat curing adhesives, or anaerobic adhesives. These adhesives include epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. I can hear it. In particular, materials with low moisture permeability such as epoxy resin are preferable. Additionally, a two-liquid mixed resin may be used. Additionally, for example, an adhesive sheet may be used.

FIG. 2 (B1) is a cross-sectional view showing a configuration example of the conductive layer 111 and the conductive layer 112. Additionally, an insulating layer 105 is also shown in (B1) of FIG. 2 . The same applies to other drawings showing configuration examples of the conductive layers 111 and 112.

As shown in (B1) of FIG. 2, the conductive layer 111 includes a conductive layer 111a on the insulating layer 105, a conductive layer 111b on the conductive layer 111a, and a conductive layer 111b on the conductive layer 111b. It can be configured to include a conductive layer 111c. Additionally, the conductive layer 112 is provided to cover the top surface of the conductive layer 111c, the side surface of the conductive layer 111c, the side surface of the conductive layer 111b, and the side surface of the conductive layer 111a.

Figure 2 (B1) shows, as an example, a configuration in which the conductive layer 111b is sandwiched between the conductive layers 111a and 111c. A material that is difficult to deteriorate from the conductive layer 111b can be used for the conductive layer 111a and 111c. For example, the conductive layer 111a may be made of a material that is less prone to migration due to contact with the insulating layer 105 than that of the conductive layer 111b. Additionally, the conductive layer 111c can be made of a material that is less susceptible to oxidation than the conductive layer 111b and has a lower electrical resistivity than the oxide material used in the conductive layer 111b.

In this specification, migration refers to one or both of stress migration and electromigration. Stress migration refers to a phenomenon in which stress is generated in a conductive layer during heat treatment due to a difference in thermal expansion coefficient between a conductive layer and a layer such as an insulating layer in contact with the conductive layer, thereby causing the atoms contained in the conductive layer to move. . Additionally, electromigration refers to a phenomenon in which atoms included in a conductive layer move due to an electric field. Due to migration, the conductive layer may form hillrocks, which are convex portions of the surface, or voids, which are cavities. The conductive layer may be short-circuited with another conductive layer due to the formation of a hillock, and the conductive layer may be divided due to the formation of a void.

In this way, by constructing the conductive layer 111b between the conductive layers 111a and 111c, the range of material selection for the conductive layer 111b can be expanded. Accordingly, for example, the conductive layer 111b can be made into a layer that has a higher reflectance to visible light than at least one of the conductive layers 111a and 111c. For example, aluminum can be used as the conductive layer 111b. Additionally, an alloy containing aluminum may be used for the conductive layer 111b. Additionally, as the conductive layer 111a, titanium, a material that has a lower reflectance for visible light than aluminum but is less prone to migration than aluminum even when in contact with the insulating layer 105, can be used. Additionally, as the conductive layer 111c, titanium, a material that has a lower reflectance of visible light than aluminum but is less oxidized than aluminum and has a lower electrical resistivity when oxide than aluminum oxide, can be used.

As described above, by forming the conductive layer 111 into a structure in which a plurality of layers are stacked, the characteristics of the display device can be improved. For example, the display device 100 can be a display device with high light extraction efficiency and high reliability.

Figure 2 (B2) is a modified example of the configuration shown in Figure 2 (B1), where the conductive layer 112 is formed on the top surface of the conductive layer 111c, the side surface of the conductive layer 111c, and the side surface of the conductive layer 111b. , and an example including a conductive layer (112a) covering the side surface of the conductive layer (111a), and a conductive layer (112b) on the conductive layer (112a) is shown.

The conductive layer 112a can be made of the same material as that used for the conductive layer 111c. For the conductive layer 112b, the same material as that used for the conductive layer 112 shown in (B1) of FIG. 2 can be used. That is, for example, a metal material such as titanium can be used as the conductive layer 112a, and a conductive oxide such as indium tin oxide can be used as the conductive layer 112b.

By setting the conductive layer 112 to the structure shown in (B2) of FIG. 2, the conductive layer 112b, which can use a conductive oxide such as indium tin oxide, has a side surface of the conductive layer 111b, which can use aluminum, for example. Access can be suppressed. As a result, deterioration of the conductive layer 111b can be appropriately suppressed, thereby improving the reliability of the display device 100. Also, when the conductive layer 112 has the structure shown in (B2) of FIG. 2, it is preferable to provide the conductive layer 111c. As a result, after the formation of the conductive layer 111 and before the formation of the conductive layer 112, for example, the upper surface of the conductive layer 111b, which has a higher reflectance for visible light than the conductive layer 111a, is prevented from being oxidized due to oxygen in the atmosphere. It can be suppressed. Therefore, a decrease in the reflectance of the conductive layer 111 to visible light can be suppressed. In this way, the display device 100 can be used as a display device with high light extraction efficiency.

Additionally, as shown in (B2) of FIG. 2, when the conductive layer 112 has a laminate structure of the conductive layer 112a and the conductive layer 112b, a conductive oxide such as indium tin oxide is used for the conductive layer 112a. For the conductive layer 112b, a mixed material containing, for example, molybdenum oxide and an organic material may be used.

Here, when the conductive layer 111 has the structure shown in (B1) and (B2) of FIG. 2, for example, the end of the conductive layer 111b is located inside the end of the conductive layer 111c when viewed in cross section. There are cases where it happens. In other words, when viewed in cross section, the conductive layer 111c may have a region that protrudes from the conductive layer 111b. In this case, if the conductive layer 112 is formed using a film formation method with low coverage, the conductive layer 112 may be disconnected due to the protruding area. Additionally, there are cases where the conductive layer 112 is locally thinned and the electrical resistance increases.

Therefore, if the conductive layer 112 is formed using a film formation method with high coverage, it is possible to suppress the occurrence of connection defects due to disconnection of the conductive layer 112 and the increase in electrical resistance due to local thinning of the conductive layer 112. . For example, if the conductive layer 112 is formed using the ALD method, even if the conductive layer 111c has a protruding area from the conductive layer 111b, connection defects and conduction may occur due to disconnection of the conductive layer 112. An increase in electrical resistance due to local thinning of the layer 112 can be appropriately suppressed.

FIG. 3 (A) is a cross-sectional view showing a configuration example of the conductive layer 111 and 112 that is different from (B1) and (B2) in FIG. 2. As shown in (A) of FIG. 3, the conductive layer 111 may be configured to include a conductive layer 111a on the insulating layer 105 and a conductive layer 111b on the conductive layer 111a. That is, the conductive layer 111 shown in (A) of FIG. 3 has a structure in which two layers are stacked. In this way, when the conductive layer 111 has a structure in which a plurality of layers are stacked, the reflectance of at least one layer constituting the conductive layer 111 to visible light is higher than the reflectance of the conductive layer 112 to visible light. . Additionally, a conductive layer 112 is provided to cover the side and top surfaces of the conductive layer 111a and 111b.

As described above, the side surface of the conductive layer 111 preferably has a tapered shape. Specifically, the side surface of the conductive layer 111 preferably has a tapered shape with a taper angle of less than 90°. For example, in the conductive layer 111 of the configuration shown in Figure 3 (A), it is desirable that at least one side of the conductive layer 111a and the conductive layer 111b has a tapered shape. For example, it is preferable that the side surface of the conductive layer 111a has a tapered shape. Alternatively, it is preferable that both the side surfaces of the conductive layer 111a and the side surfaces of the conductive layer 111b have a tapered shape.

Figure 3 (B) is a modified example of the configuration shown in Figure 3 (A), in which the conductive layer 112 is composed of two layers: a conductive layer 112a and a conductive layer 112b on the conductive layer 112a. It had a layered structure. The same material as that used for the conductive layer 111 can be used for the conductive layer 112a. For example, the conductive layer 112b can be made of the same material as the material that can be used for the conductive layer 112 shown in (A) of FIG. 3 .

For example, silver or an alloy containing silver can be used as the conductive layer 112a. Silver and alloys containing silver have the characteristic of having a higher reflectivity for visible light than, for example, titanium. In addition, silver is less likely to be oxidized than, for example, aluminum that can be used in the conductive layer 111b, and silver oxide has the characteristic of having a lower electrical resistivity than aluminum oxide. Therefore, by using silver or an alloy containing silver as the conductive layer 112a, the reflectance of the pixel electrode to visible light is appropriately increased and an increase in the electrical resistance of the pixel electrode due to oxidation of the conductive layer 112a is suppressed. can do. Therefore, the display device 100 can be a display device with high light extraction efficiency and high reliability. In particular, when a microcavity structure is applied to the light emitting device 130, it is desirable to use silver, a material with a high reflectance of visible light, or an alloy containing silver as the conductive layer 112a. As a result, the light extraction efficiency of the display device 100 can be appropriately increased.

Additionally, titanium may be used as the conductive layer 112a. Since titanium has superior etching processability compared to silver, the conductive layer 112a can be easily formed by using titanium as the conductive layer 112a.

Additionally, the conductive layer 111 does not need to include the conductive layer 111b. That is, the conductive layer 111 can have a single-layer structure of the conductive layer 111a. For example, titanium that can be used in the conductive layer 111a is less likely to be oxidized than aluminum that can be used in the conductive layer 111b, and the electrical resistivity of titanium oxide is lower than that of aluminum oxide. Therefore, because the conductive layer 111 does not include the conductive layer 111b, the electrical resistance at the contact interface between the conductive layer 111 and the conductive layer 112 can be reduced.

Figure 4 (A) is a cross-sectional view showing a configuration example of the conductive layer 111 and 112 that is different from Figures 2 (B1) and (B2) and Figures 3 (A) and (B). In the example shown in Figure 4 (A), the conductive layer 111 had a single-layer structure. Additionally, the conductive layer 112 had a structure in which three layers were stacked: a conductive layer 112a, a conductive layer 112b on the conductive layer 112a, and a conductive layer 112c on the conductive layer 112b.

For example, the conductive layer 111 shown in Figure 4 (A) is made of a material that is difficult to oxidize even when in contact with the conductive layer 112a and whose electrical resistivity does not increase significantly even if oxidized. For example, an alloy containing titanium can be used as the conductive layer 111. As a result, deterioration of the conductive layer 111 can be suppressed, making the display device 100 a highly reliable display device.

The conductive layer 112a shown in FIG. 4A is a layer whose adhesion to the conductive layer 112b is higher than that of the insulating layer 105, for example. As such a conductive layer 112a, a conductive oxide can be used, for example, an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon. Specifically, for example, indium tin oxide or indium tin oxide containing silicon can be used as the conductive layer 112a. As a result, peeling of the conductive layer 112b can be suppressed, making the display device 100 a highly reliable display device. Additionally, as shown in FIG. 4A, the conductive layer 112a may be in contact with the insulating layer 105, and the conductive layer 112b may not be in contact with the insulating layer 105.

The conductive layer 112b shown in (A) of FIG. 4 is a layer whose reflectance to visible light is higher than that of the conductive layer 111, the conductive layer 112a, and the conductive layer 112c. The reflectance of the conductive layer 112b to visible light can be, for example, 70% or more and 100% or less, preferably 80% or more and 100% or less, and more preferably 90% or more and 100% or less. For example, silver or an alloy containing silver can be used as the conductive layer 112b. An example of an alloy containing silver is APC. As a result, the display device 100 can be converted into a display device with high light extraction efficiency.

When the conductive layer 111 and the conductive layer 112 function as an anode, the conductive layer 112c is a layer with a large work function. The conductive layer 112c is, for example, a layer with a larger work function than the conductive layer 112b. As a result, the driving voltage of the light emitting device 130 can be lowered. As the conductive layer 112c, for example, the same material as the material that can be used for the conductive layer 112a can be used. For example, it can be configured to use the same type of material for the conductive layer 112a and the conductive layer 112c. For example, when indium tin oxide is used for the conductive layer 112a, indium tin oxide can also be used for the conductive layer 112c.

Additionally, when the conductive layer 111 and the conductive layer 112 function as a cathode, the conductive layer 112c is a layer with a small work function. The conductive layer 112c is, for example, a layer with a smaller work function than the conductive layer 112b. As a result, the driving voltage of the light emitting device 130 can be lowered.

Additionally, it is desirable that the conductive layer 112c be a layer with high transmittance to visible light. For example, it is preferable that the visible light transmittance of the conductive layer 112c is higher than the visible light transmittance of the conductive layer 111 and the conductive layer 112b. For example, the transmittance of the conductive layer 112c to visible light can be 60% or more and 100% or less, preferably 70% or more and 100% or less, and more preferably 80% or more and 100% or less. As a result, the light absorbed by the conductive layer 112c among the light emitted by the EL layer 113 can be reduced. In addition, as described above, the conductive layer 112b below the conductive layer 112c can be a layer with a high reflectivity for visible light. Therefore, the display device 100 can be a display device with high light extraction efficiency.

In addition, the conductive layer 112b shown in (A) of FIG. 4 is a layer having a high reflectivity for the light emitted by the EL layer 113, and the conductive layer 112c is a layer having a high transmittance to the light emitted by the EL layer 113. Do it on a high floor. For example, when the EL layer 113 emits infrared light, the conductive layer 112b is a layer having a high reflectivity for infrared light, and the conductive layer 112c is a layer having a high transmittance for infrared light. For example, when the EL layer 113 emits infrared light, visible light can be replaced with infrared light in the above description of the conductive layer 112b and 112c shown in (A) of FIG. 4.

As a result, the display device 100 can be a highly reliable display device with high light extraction efficiency. Additionally, the display device 100 may be a display device that includes a light-emitting element with high luminous efficiency.

Figures 4 (B) and (C) are cross-sectional views showing a configuration example of the conductive layer 111 and 112 different from that in Figure 4 (A). In the example shown in FIG. 4B, the conductive layer 111 has a structure in which two layers, a conductive layer 111a and a conductive layer 111b on the conductive layer 111a, are stacked. In the example shown in Figure 4 (C), the conductive layer 111 is composed of a conductive layer 111a, a conductive layer 111b on the conductive layer 111a, and a conductive layer 111c on the conductive layer 111b. It had a three-layer structure.

For the conductive layer 111a and 111c, the same material as the conductive layer 111 shown in (A) of FIG. 4 can be used, for example, titanium or an alloy containing titanium can be used. For example, the conductive layer 111b can be a layer whose reflectance to visible light is higher than that of the conductive layer 111a. Additionally, the conductive layer 111b may be, for example, a layer with higher etching processability than the conductive layer 112b. As a result, the reflectance of visible light of the pixel electrode can be increased and the thickness of the conductive layer 112b, which can be made of, for example, silver or an alloy containing silver, can be thinned. Therefore, the display device 100 can be made into a display device with high light extraction efficiency, and the display device 100 can be easily manufactured. For example, aluminum or aluminum alloy can be used as the conductive layer 111b.

Next, the insulating layer 127 and its vicinity structure will be described using Figures 5 (A) and (B). FIG. 5A is an enlarged cross-sectional view of the insulating layer 127 between the EL layer 113R and 113G and the surrounding area. Hereinafter, the insulating layer 127 between the EL layer 113R and the EL layer 113G will be described as an example, but the insulating layer 127 and the EL layer 113B between the EL layer 113G and 113B will be described below. The insulating layer 127 between and the EL layer 113R can be similarly explained. Also, FIG. 5(B) is an enlarged view of the end of the insulating layer 127 on the EL layer 113G shown in FIG. 5(A) and its vicinity. In the following, the end of the insulating layer 127 on the EL layer 113G may be used as an example, but the end of the insulating layer 127 on the EL layer 113R and the insulating layer on the EL layer 113B ( The end of 127) can be similarly explained.

As shown in FIG. 5A, an EL layer 113R is provided to cover the conductive layer 112R, and an EL layer 113G is provided to cover the conductive layer 112G. A mask layer 118R is provided in contact with a portion of the upper surface of the EL layer 113R, and a mask layer 118G is provided in contact with a portion of the upper surface of the EL layer 113G. to have a region in contact with the top and side surfaces of the mask layer 118R, the side surfaces of the EL layer 113R, the top surface of the insulating layer 105, the top and side surfaces of the mask layer 118G, and the side surfaces of the EL layer 113G. An insulating layer 125 is provided. An insulating layer 127 is provided in contact with the upper surface of the insulating layer 125. In addition, the insulating layer 127 overlaps a part of the top surface and the side surface of the EL layer 113R and a part of the top surface and the side surface of the EL layer 113G through the insulating layer 125, and the top surface of the insulating layer 125 and at least a portion of the side surface. A common layer 114 is provided to cover the EL layer 113R, the mask layer 118R, the EL layer 113G, the mask layer 118G, the insulating layer 125, and the insulating layer 127, and the common layer ( 114) A common electrode 115 is provided thereon.

As shown in (A) of FIG. 5, the film thickness of the insulating layer 105 in the area that does not overlap the EL layer 113 is the film thickness of the insulating layer 105 in the area that overlaps the EL layer 113. It may become thinner. That is, the insulating layer 105 may have concave portions in areas that do not overlap with the EL layer 113. The concave portion is formed due to the formation process of the EL layer 113, for example.

Additionally, the insulating layer 127 is formed in the area between the two island-shaped EL layers 113 (for example, the area between the EL layer 113R and 113G in Fig. 5(A)). At this time, at least a portion of the insulating layer 127 is connected to the side end of the EL layer 113 on one side (e.g., the EL layer 113R in Figure 5 (A)) and the EL layer 113 on the other side (e.g., the EL layer 113 on the other side). In Figure 5(A), it is disposed at a position sandwiched between the side ends of the EL layer (113G). By providing such an insulating layer 127, the divided portions and local film thicknesses of the common layer 114 and common electrode 115 formed on the island-shaped EL layer 113 and on the insulating layer 127 are increased. The formation of thin parts can be suppressed.

As shown in FIG. 5B, when the display device 100 is viewed in cross section, it is preferable that the end of the insulating layer 127 has a tapered shape with a taper angle θ1. The taper angle θ1 is the angle formed between the side surface of the insulating layer 127 and the surface of the substrate. However, it is not limited to the substrate surface, and may be the angle formed between the top surface of the flat part of the EL layer 113G or the top surface of the flat part of the conductive layer 112G and the side surface of the insulating layer 127.

The taper angle θ1 of the insulating layer 127 is less than 90°, preferably 60° or less, more preferably 45° or less, and still more preferably 20° or less. By forming the end of the insulating layer 127 into such a forward tapered shape, the common layer 114 and the common electrode 115 provided on the insulating layer 127 can be formed with high covering properties, and the film can be disconnected or locally thinned. It can prevent things like that from happening. As a result, the in-plane uniformity of the common layer 114 and the common electrode 115 can be improved, thereby improving the display quality of the display device.

Additionally, as shown in FIG. 5A, the display device 100 preferably has a top surface of the insulating layer 127 that has a convex curved shape when viewed in cross section. The convex curved shape of the upper surface of the insulating layer 127 is preferably gently convex toward the center. In addition, it is desirable that the convex curved portion at the center of the upper surface of the insulating layer 127 be smoothly connected to the tapered portion at the end. By forming the insulating layer 127 in this shape, the common layer 114 and the common electrode 115 can be formed entirely over the insulating layer 127 with high covering properties.

As shown in Figure 5 (B), the end of the insulating layer 127 is preferably located outside the end of the insulating layer 125. As a result, the unevenness of the surface forming the common layer 114 and the common electrode 115 can be appropriately reduced, thereby improving the covering properties of the common layer 114 and the common electrode 115.

As shown in FIG. 5B, the insulating layer 125 preferably has a tapered shape with a taper angle θ2 at the end of the display device 100 when viewed in cross section. The taper angle θ2 is the angle formed between the side surface of the insulating layer 125 and the substrate surface. However, it is not limited to the substrate surface, and may be an angle formed between the top surface of the flat part of the EL layer 113G or the top surface of the flat part of the conductive layer 112G and the side surface of the insulating layer 125.

The taper angle θ2 of the insulating layer 125 is less than 90°, preferably 60° or less, more preferably 45° or less, and still more preferably 20° or less.

As shown in FIG. 5B, the mask layer 118G preferably has a tapered shape with a taper angle θ3 at the end of the display device 100 when viewed in cross section. The taper angle θ3 is the angle formed between the side surface of the mask layer 118G and the substrate surface. However, it is not limited to the substrate surface, and may be an angle formed between the top surface of the flat part of the EL layer 113G or the top surface of the flat part of the conductive layer 112G and the side surface of the mask layer 118G.

The taper angle θ3 of the mask layer 118G is less than 90°, preferably 60° or less, more preferably 45° or less, and still more preferably 20° or less. By making the mask layer 118G have such a forward taper shape, the common layer 114 and the common electrode 115 provided on the mask layer 118G can be formed with high covering properties.

The end of the mask layer 118R and the end of the mask layer 118G are preferably located outside the end of the insulating layer 125, respectively. As a result, the unevenness of the surface forming the common layer 114 and the common electrode 115 can be reduced and the covering properties of the common layer 114 and the common electrode 115 can be improved.

Details will be described later, but if the etching process of the insulating layer 125 and the mask layer 118 is performed together, the insulating layer 125 and the mask layer 118 below the end of the insulating layer 127 are lost due to side etching. Cavities may form. Due to the cavity, unevenness occurs on the surface forming the common layer 114 and the common electrode 115, making it easy for the common layer 114 and the common electrode 115 to be disconnected. Therefore, by dividing the etching process into two and performing heat treatment between the two etchings, even if a cavity is formed due to the first etching process, the insulating layer 127 is deformed by the heat treatment and the cavity is filled. can do. Additionally, in the second etching process, since a thin film is etched, the amount of side etching is reduced, making it difficult to form a cavity, and even if a cavity is formed, it can be very small. Therefore, the occurrence of irregularities on the surface forming the common layer 114 and the common electrode 115 can be suppressed, and the occurrence of disconnection in the common layer 114 and the common electrode 115 can be suppressed. Since the etching process is performed twice in this way, the taper angle θ2 and the taper angle θ3 may be different angles. Additionally, the taper angle θ2 and the taper angle θ3 may be the same angle. Additionally, the taper angle θ2 and the taper angle θ3 may each be smaller than the taper angle θ1.

The insulating layer 127 may cover at least part of the side surface of the mask layer 118R and at least part of the side surface of the mask layer 118G. For example, in Figure 5 (B), the insulating layer 127 covers the inclined surface located at the end of the mask layer 118G formed by the first etching process in a contact state, and the mask layer formed by the second etching process ( The slope located at the end of 118G) represents an exposed example. These two inclined surfaces may be distinguishable because their taper angles are different. In addition, there are cases where there is little difference in the taper angles of the sides formed by the two etching processes, making it difficult to distinguish them.

In addition, Figures 6 (A) and (B) show a modified example of the configuration shown in Figures 5 (A) and (B), where the insulating layer 127 covers the entire side of the mask layer 118R and the mask layer 118G. An example of covering the entire side is shown. Specifically, in Figure 6 (B), the insulating layer 127 covers both sides of the two inclined surfaces in contact with each other. This is desirable because the unevenness of the surface forming the common layer 114 and the common electrode 115 can be further reduced. FIG. 6B shows an example in which the end of the insulating layer 127 is located outside the end of the mask layer 118G. The end of the insulating layer 127 may be located inside the end of the mask layer 118G, as shown in FIG. 6B, and may be aligned or substantially aligned with the end of the mask layer 118G. Additionally, as shown in FIG. 6B, the insulating layer 127 may be in contact with the EL layer 113G.

In addition, Figure 7 (A) and Figure 8 (A) are modified examples of the configuration shown in Figure 5 (A), and Figure 7 (B) and Figure 8 (B) are shown in Figure 5 (B). This is a modified example of the configuration shown. In Figures 7 (A) and (B) and Figure 8 (A) and (B), the insulating layer 127 has a concave curved shape on the side (also called a concave part, concave part, recessed part, sunken part, etc. ) is shown as an example. Depending on the material and formation conditions (heating temperature, heating time, heating atmosphere, etc.) of the insulating layer 127, a concave curved shape may be formed on the side of the insulating layer 127.

7 (A) and (B) show an example in which the insulating layer 127 covers a portion of the side surface of the mask layer 118G and the remaining portion of the side surface of the mask layer 118G is exposed. Figures 8 (A) and (B) are examples in which the insulating layer 127 covers the entire side surface of the mask layer 118G in a contact state.

In the configurations shown in Fig. 6(B), Fig. 7(B), and Fig. 8(B), it is preferable that the taper angle θ1 to taper angle θ3 are respectively within the above range.

In addition, as shown in Figure 5 (A), Figure 6 (A), Figure 7 (A), and Figure 8 (A), one end of the insulating layer 127 is connected to the upper surface of the conductive layer 111R. It is preferable that the other end of the insulating layer 127 overlaps the upper surface of the conductive layer 111G. With this structure, the end portion of the insulating layer 127 can be formed on the substantially flat areas of the EL layer 113R and 113G. Therefore, the tapered shapes of the insulating layer 127, 125, and mask layer 118 can be formed relatively easily. Additionally, film peeling of the conductive layer 111R, conductive layer 111G, conductive layer 112R, conductive layer 112G, EL layer 113R, and EL layer 113G can be suppressed. Meanwhile, the smaller the overlap between the upper surface of the pixel electrode and the insulating layer 127, the larger the light emitting area of the light emitting device, which is desirable because the aperture ratio can be increased.

As described above, in each configuration shown in FIGS. 5 to 8, by providing the insulating layer 127, the insulating layer 125, the mask layer 118R, and the mask layer 118G, the EL layer 113R is substantially The common layer 114 and the common electrode 115 can be formed with high coverage from the flat area to the substantially flat area of the EL layer 113G. In addition, it is possible to suppress the formation of divided portions and locally thin portions in the common layer 114 and the common electrode 115. Therefore, it is suppressed from occurring between the light-emitting elements 130, a connection failure caused by the divided portion of the common layer 114 and the common electrode 115, and an increase in electrical resistance caused by a locally thin film thickness. can do. As a result, the display device 100 can be a display device with high display quality.

Figures 9 (A) and (B) are modified examples of the configuration shown in Figure 5 (A). In Figure 9 (A), the side of the insulating layer 105, specifically, the side of the insulating layer 105 at the boundary between the area that overlaps and does not overlap the conductive layer 111 (Figure 9 (A) An example is shown where the part surrounded by a dashed line is vertical. Figure 9(B) shows an example in which the upper surface of the insulating layer 127 has a concave curved shape, that is, a shape in which the center and its vicinity are concave when viewed in cross section. Additionally, as shown in FIG. 9B, the stress of the insulating layer 127 can be alleviated by having a concave curved surface in the central portion of the insulating layer 127. More specifically, by configuring the central portion of the insulating layer 127 to have a concave curved surface, the local stress occurring at the end of the insulating layer 127 is alleviated, and the EL layer 113R, the EL layer 113G, and the mask layer Film peeling between the mask layer 118R and the mask layer 118G, film peeling between the mask layer 118R and the mask layer 118G and the insulating layer 125, and between the insulating layer 125 and the insulating layer 127. Either membrane detachment or ascites can be suppressed.

In addition, in order to configure the insulating layer 127 to have a concave curved surface in the central portion as shown in FIG. 9B, exposure may be performed using a multi-gradation mask, typically a halftone mask or a graytone mask. Additionally, a multi-gradation mask is a mask that can expose at three types of exposure levels: exposed portion, intermediate exposed portion, and unexposed portion, and is an exposure mask in which transmitted light has multiple intensities. This can form the insulating layer 127 having a plurality of regions (typically two types) of thickness by using one photo mask (one exposure and development process). Alternatively, in order to configure the insulating layer 127 to have a concave curved surface in the central portion, the line width of the mask located on the concave curved surface is made smaller than the line width of the exposed portion, thereby forming the insulating layer 127 having a plurality of thick regions. can do.

Additionally, the method of forming the structure having the concave curved surface at the center of the insulating layer 127 is not limited to the method described above. For example, the exposed part and the middle exposed part may be manufactured separately using two photo masks. Alternatively, the viscosity of the resin material used for the insulating layer 127 may be adjusted. Specifically, the viscosity of the material used for the insulating layer 127 may be set to 10 cP or less, preferably 1 cP or more and 5 cP or less.

Additionally, although not shown in Figure 9(B), the concave curved surface at the center of the insulating layer 127 does not necessarily need to be continuous and may be interrupted between adjacent light emitting devices. In this case, a part of the insulating layer 127 is lost in the central part of the insulating layer 127 shown in (B) of FIG. 9, and the surface of the insulating layer 125 is exposed. In the case of the above configuration, the shape of the insulating layer 127 may be such that the common layer 114 and the common electrode 115 cover the insulating layer 127.

[Configuration Example 2]

FIG. 10 shows a modified example of the configuration shown in FIG. 2 (A), in which the end of the mask layer 118R is aligned or substantially aligned with the end of the conductive layer 112R in addition to the end of the EL layer 113R. It was. That is, FIG. 10 shows an example in which the end of the conductive layer 112R is aligned or substantially aligned with the end of the EL layer 113R. Similarly, in the example shown in FIG. 10, the end of the mask layer 118G is aligned or substantially aligned with the end of the conductive layer 112G in addition to the end of the EL layer 113G, and the end of the mask layer 118B is aligned with the end of the EL layer 113B. ) is aligned or substantially aligned with the end of the conductive layer 112B in addition to the end of the conductive layer 112B. That is, in the example shown in FIG. 10, the end of the conductive layer 112G is aligned or substantially aligned with the end of the EL layer 113G, and the end of the conductive layer 112B is aligned or substantially aligned with the end of the EL layer 113B. Sorted. Furthermore, in the example shown in FIG. 10, the insulating layer 125 is formed on the side of the conductive layer 112R and the conductive layer 112G in addition to the side of the EL layer 113R, the side of the EL layer 113G, and the side of the EL layer 113B. ) and a region in contact with the side surface of the conductive layer 112B.

FIG. 11 (A) is an enlarged cross-sectional view of the insulating layer 127 and the surrounding area between the EL layer 113R and EL layer 113G in the configuration shown in FIG. 10, and FIG. 5 (A) This is a modified example of the configuration shown. In the example shown in Fig. 11(A), the EL layer 113R is provided on the conductive layer 112R, and the EL layer 113G is provided on the conductive layer 112G.

Figure 11 (B), Figure 12 (A), (B), Figure 13 (A), (B) is Figure 6 (A), Figure 7 (A), Figure 8 (A), respectively. , This is a modified example of the configuration shown in Figures 9 (A) and (B), and is an example of applying the structure shown in Figure 10.

[Configuration Example 3]

FIG. 14 shows a modified example of the configuration shown in FIG. 2 (A) and shows an example in which a tandem structure (a structure including a plurality of light-emitting units) is applied to the light-emitting device 130. The light emitting unit has at least one light emitting layer. It is desirable to provide a charge generation layer between each light emitting unit.

FIG. 14 shows a configuration example when a two-stage tandem structure in which two light-emitting units are stacked is applied to the light-emitting device 130. In Figure 14, the broken line in the EL layer 113 represents a charge generation layer. Also, in subsequent drawings, the charge generation layer included in the EL layer 113 may be indicated by a broken line.

In the example shown in Fig. 14, the EL layer 113 includes a first light-emitting unit located in a layer below the charge generation layer and a second light-emitting unit located in a layer above the charge generation layer. By applying a tandem structure to the light-emitting device 130, current efficiency due to light emission can be increased, and thus the light-emitting efficiency of the light-emitting device 130 can be increased. Alternatively, since the current density flowing through the light emitting device 130 can be lowered with the same light emission luminance, the power consumption of the display device 100 including the light emitting device 130 can be reduced. Additionally, by applying a tandem structure to the light emitting device 130, the reliability of the light emitting device 130 can be increased. Additionally, a tandem structure of three or more stages may be applied to the light emitting element 130. For example, when applying a three-stage tandem structure to the light emitting device 130, the EL layer 113 consists of a first light emitting unit, a first charge generation layer, a second light emitting unit, a second charge generation layer, and A configuration can be made in which the third light emitting units are stacked in this order.

As described above, the EL layer 113R, EL layer 113G, and EL layer 113B include at least a light emitting layer. For example, the first light-emitting unit and the second light-emitting unit included in the EL layer 113R each include a light-emitting layer that emits red light. Additionally, the first light-emitting unit and the second light-emitting unit included in the EL layer 113G each include a light-emitting layer that emits green light. Additionally, the first light-emitting unit and the second light-emitting unit included in the EL layer 113B each include a light-emitting layer that emits blue light.

In addition, each light-emitting unit included in the EL layer 113R, EL layer 113G, and EL layer 113B is a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer, respectively. You may include more than one.

In the pixel 108 shown in FIG. 14, for example, when the pixel electrode of the light emitting element 130 functions as an anode and the common electrode 115 functions as a cathode, the EL layer 113R, EL layer 113G, and the first light emitting unit included in the EL layer 113B may include a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer in this order. That is, the first light-emitting unit included in the EL layer 113 includes, for example, a first functional layer including a hole injection layer and a hole transport layer from the bottom, and a second functional layer including a light-emitting layer and an electron transport layer in this order. It can be done in a stacked configuration. Additionally, the second light emitting unit included in the EL layer 113R, EL layer 113G, and EL layer 113B may include a hole transport layer, a light emitting layer, and an electron transport layer in this order. That is, the second light-emitting unit included in the EL layer 113 has a configuration in which, for example, a third functional layer including a hole transport layer, a light-emitting layer, and a fourth functional layer including an electron transport layer are stacked in this order from the bottom. can do.

Here, the first light emitting unit and the second light emitting unit may include an electron blocking layer between the hole transport layer and the light emitting layer. Additionally, a hole blocking layer may be included between the electron transport layer and the light emitting layer. Additionally, the second light emitting unit may include an electron injection layer on the electron transport layer. Additionally, the first functional layer may include one of the hole injection layer and the hole transport layer and may not include the other layer.

Also, for example, when the pixel electrode of the light emitting element 130 functions as a cathode and the common electrode 115 functions as an anode, the EL layer 113R, EL layer 113G, and EL layer 113B are included. The first light emitting unit may include an electron injection layer, an electron transport layer, a light emitting layer, and a hole transport layer in this order. That is, the first light-emitting unit included in the EL layer 113 includes, for example, a first functional layer including an electron injection layer and an electron transport layer from the bottom, and a second functional layer including a light-emitting layer and a hole transport layer in this order. It can be done in a stacked configuration. Additionally, the second light emitting unit included in the EL layer 113R, EL layer 113G, and EL layer 113B may include an electron transport layer, a light emitting layer, and a hole transport layer in this order. That is, the second light-emitting unit included in the EL layer 113 has a configuration in which, for example, a third functional layer including an electron transport layer, a light-emitting layer, and a fourth functional layer including a hole transport layer are stacked in this order from the bottom. can do.

Here, the first light emitting unit and the second light emitting unit may include a hole blocking layer between the electron transport layer and the light emitting layer. Additionally, an electron blocking layer may be included between the hole transport layer and the light emitting layer. Additionally, the second light emitting unit may include a hole injection layer on the hole transport layer. Additionally, the first functional layer may include one of the electron injection layer and the electron transport layer and may not include the other layer.

Additionally, in either case where the pixel electrode of the light emitting device 130 functions as an anode or as a cathode, the first light emitting unit does not need to include the second functional layer. Additionally, the second light emitting unit does not need to include at least one of the third functional layer and the fourth functional layer.

The second light-emitting unit preferably includes a light-emitting layer and a carrier transport layer on the light-emitting layer. Additionally, the second light emitting unit preferably includes a light emitting layer and a carrier blocking layer on the light emitting layer. Additionally, the second light emitting unit preferably includes a light emitting layer, a carrier blocking layer on the light emitting layer, and a carrier transport layer on the carrier blocking layer. Since the surface of the second light-emitting unit is exposed during the manufacturing process of the display device, by providing one or both of the carrier transport layer and the carrier blocking layer on the light-emitting layer, exposure of the light-emitting layer to the outermost surface is suppressed and damage to the light-emitting layer is reduced. It can be reduced. Thereby, the reliability of the light emitting device can be increased. In addition, when having three or more light-emitting units, it is preferable that the light-emitting unit provided in the uppermost layer has a light-emitting layer and one or both of a carrier transport layer and a carrier blocking layer on the light-emitting layer.

As described above, the light emitting device 130 may have a tandem structure. For the detailed configuration of the tandem structure light emitting element 130, please refer to Embodiment 2. Additionally, the configuration and materials of the light emitting device 130 in which the light emitting device 130 has a single structure and a tandem structure may refer to Embodiment 5.

FIG. 15(A) is an enlarged cross-sectional view of the insulating layer 127 and the surrounding area between the EL layer 113R and EL layer 113G in the configuration shown in FIG. 14, and in FIG. 5(A) This is a modified example of the configuration shown.

In the example shown in FIG. 15A, the EL layer 113R includes, for example, a light-emitting unit 113R1, a charge generation layer 113R2 on the light-emitting unit 113R1, and light emission on the charge generation layer 113R2. Includes unit 113R3. Additionally, the EL layer 113G includes, for example, a light-emitting unit 113G1, a charge generation layer 113G2 on the light-emitting unit 113G1, and a light-emitting unit 113G3 on the charge generation layer 113G2. Here, the layer indicated by a broken line in the EL layer 113R shown in FIG. 14 corresponds to the charge generation layer 113R2, and the layer indicated by a broken line in the EL layer 113G corresponds to the charge generation layer 113G2.

When a two-stage tandem structure is applied to the light emitting element 130R and the light emitting element 130G, the light emitting unit 113R1 and the light emitting unit 113G1 may be the first light emitting unit described in FIG. 14, and the light emitting unit (113R3) and the light emitting unit (113G3) can be the second light emitting unit described in FIG. 14.

Figure 15 (B), Figure 16 (A), (B), and Figure 17 (A) are respectively Figure 6 (A), Figure 7 (A), Figure 8 (A), and Figure This is a modified example of the configuration shown in (B) of 9, and is an example of applying the configuration shown in FIG. 14. Figure 17(B) shows a modified example of the configuration shown in Figure 15(A), where the upper surface of the insulating layer 127 has a flat portion when viewed in cross section.

FIG. 18 (A) is a cross-sectional view showing a configuration example of the area 141 and the connection portion 140. In region 141 , a conductive layer 109 is provided over the insulating layer 101 , and an insulating layer 103 is provided over the insulating layer 101 and over the conductive layer 109 . The conductive layer 109 can be formed through the same process as the conductive layer 102 shown in (A) of FIG. 2 and can have the same material as the conductive layer 102.

The region 141 includes an EL layer 113R on the insulating layer 105, a mask layer 118R on the insulating layer 105 and on the EL layer 113R, and an insulating layer (118R) on the mask layer 118R. 125, the insulating layer 127 on the insulating layer 125, the common layer 114 on the insulating layer 127, the common electrode 115 on the common layer 114, and the common electrode 115 ) A protective layer 131 on the protective layer 131, a resin layer 122 on the protective layer 131, and a substrate 120 on the resin layer 122 are provided. In area 141, mask layer 118R is provided to cover, for example, an end of EL layer 113R. Additionally, for example, depending on the manufacturing process of the display device 100, the EL layer 113G or EL layer 113B may be provided in the area 141 instead of the EL layer 113R. Additionally, there are cases where a mask layer 118G or a mask layer 118B is provided in the area 141 instead of the mask layer 118R.

The EL layer 113R provided in the region 141 is not electrically connected to the common electrode 115. Accordingly, the EL layer 113R provided in the region 141 can be configured to not apply voltage, and therefore, the EL layer 113R provided in the region 141 can be configured not to emit light.

Details will be described later, but in a display device configured to provide the EL layer 113R and the mask layer 118R in the region 141, a portion of the insulating layer 105 and a portion of the insulating layer 104 are removed during the manufacturing process of the display device. , and a part of the insulating layer 103 is removed by etching, etc., thereby preventing the conductive layer 109 from being exposed. This can prevent the conductive layer 109 from unintentionally contacting other electrodes or layers. For example, short circuiting between the conductive layer 109 and the common electrode 115 can be prevented. In this way, the display device 100 can be made into a highly reliable display device. Additionally, the display device 100 can be manufactured using a high-yield method.

The connection portion 140 includes a conductive layer 111C on the insulating layer 105, a conductive layer 112C covering the top and side surfaces of the conductive layer 111C, and a common layer 114 on the conductive layer 112C. , the common electrode 115 on the common layer 114, the protective layer 131 on the common electrode 115, the resin layer 122 on the protective layer 131, and the resin layer 122 on the resin layer 122. Includes a substrate 120. In addition, a mask layer 118R is provided to cover the end of the conductive layer 112C, and an insulating layer 125, an insulating layer 127, a common layer 114, a common electrode 115, and the protective layer 131 are provided by stacking them in this order. In addition, when the mask layer 118G or the mask layer 118B is provided in the area 141 instead of the mask layer 118R, the connection portion 140 is also provided with the mask layer 118G or the mask layer (118G) instead of the mask layer 118R. 118B) is provided.

At the connection portion 140, the conductive layer 111C and 112C are electrically connected to the common electrode 115. The conductive layer 111C and the conductive layer 112C are electrically connected to, for example, a Flexible Printed Circuit (FPC) (not shown). Accordingly, for example, by supplying the power potential to the FPC, the power potential can be supplied to the common electrode 115 through the conductive layer 111C and the conductive layer 112C.

Here, when the electrical resistance in the thickness direction of the common layer 114 is negligibly small, even if the common layer 114 is provided between the conductive layer 112C and the common electrode 115, the conductive layer 111C and the conductive layer Continuity between (112C) and the common electrode 115 can be ensured. By providing the common layer 114 not only in the pixel portion 107 but also in the region 141 and the connection portion 140, for example, a mask for defining the film deposition area (distinguished from a fine metal mask, a region mask or rough metal mask) The common layer 114 can be formed without using a metal mask (also called a mask, etc.). Therefore, the manufacturing process of the display device 100 can be simplified.

Figure 18(B) shows a modified example of the configuration shown in Figure 18(A), and shows an example in which the common layer 114 is not provided in the connection portion 140. In the example shown in FIG. 18(B), the conductive layer 112C and the common electrode 115 may be in contact with each other. As a result, the electrical resistance between the conductive layer 112C and the common electrode 115 can be reduced. In addition, in Figure 18 (B), the common layer 114 is provided in the area that overlaps the EL layer 113R in the area 141, and the common layer 114 is provided in the area that does not overlap the EL layer 113R. Although the configuration is not shown, it is not limited to this. For example, the common layer 114 does not need to be provided in the area that overlaps the EL layer 113R in the area 141, and the common layer 114 may be provided in the area that does not overlap the EL layer 113R.

Figures 18 (C) and (D) are modified examples of the configuration shown in Figures 18 (A) and (B), respectively, in which the conductive layer 112C is provided not only in the connection portion 140 but also in the region 141. indicated. 18 (C) and (D), in the region 141, a conductive layer 112C is provided on the insulating layer 105, an EL layer 113R is provided on the conductive layer 112C, and the conductive layer 113R is provided on the conductive layer 105. A mask layer 118R is provided over the layer 112C and over the EL layer 113R. Additionally, the connection portion 140 is provided with a mask layer 118R over the conductive layer 112C.

Figures 18 (E) and (F) show a modified example of the configuration shown in Figures 18 (A) and (B), respectively, and show an example in which a tandem structure is applied to the EL layer 113R.

[Configuration Example 4]

Figure 19(A) is a modified example of the configuration shown in Figure 2(A), in which the subpixel 110R includes the colored layer 132R, and the subpixel 110G includes the colored layer 132G. , an example in which the subpixel 110B includes the colored layer 132B is shown.

As shown in (A) of FIG. 19, the colored layer 132R, the colored layer 132G, and the colored layer 132B can be provided on the protective layer 131. In this case, the protective layer 131 is preferably flattened, but does not need to be flattened.

In the example shown in FIG. 19A, the light-emitting element 130 included in the sub-pixel 110R, the light-emitting element 130 included in the sub-pixel 110G, and the light-emitting element included in the sub-pixel 110B ( 130) can all represent light of the same color, for example, white light. In this case as well, for example, the colored layer 132R transmits red light, the colored layer 132G transmits green light, and the colored layer 132B transmits blue light, so that (A) in Figure 19 The display device 100 having the configuration shown in ) is capable of performing full color display. Additionally, the colored layer 132R, the colored layer 132G, or the colored layer 132B may transmit light such as cyan, magenta, yellow, white, or infrared light. Additionally, the light emitting element 130 may emit, for example, infrared light.

Since the display device 100 having the configuration shown in (A) of FIG. 19 does not need to form the EL layer 113 separately for each color, the manufacturing process of the display device 100 can be simplified. Therefore, the manufacturing cost of the display device 100 can be reduced and the display device 100 can be made into a low-cost display device.

The adjacent colored layer 132 has an overlapping area on the insulating layer 127. For example, in the cross section shown in (A) of FIG. 19, one end of the colored layer 132G overlaps the colored layer 132R, and the other end of the colored layer 132G overlaps the colored layer 132B. As a result, light leakage of light emitted from the light emitting device 130 to the adjacent subpixel 110 can be suppressed. Therefore, for example, light emitted by the light emitting device 130 provided to the subpixel 110G can be prevented from being incident on the colored layer 132R and the colored layer 132B. Therefore, the display device 100 can be a display device with high display quality.

FIG. 19(B) is an enlarged cross-sectional view of the insulating layer 127 between the two EL layers 113 shown in FIG. 19(A) and the surrounding area. In addition, in Figure 19(B), a conductive layer 112R and a conductive layer 112G are shown as the conductive layer 112. In addition, the shapes of the mask layer 118, the insulating layer 125, and the insulating layer 127 shown in (B) of FIG. 19 are the same as those in (A) of FIG. 5.

As shown in Figures 19 (A) and (B), the film thickness of each of the conductive layers 112R, 112G, and 112B may be different. For example, it is desirable to set the film thickness according to the optical path length that strengthens the color light transmitted by the colored layer 132. For example, when the colored layer 132R transmits red light, the film thickness of the conductive layer 112R is set to strengthen the red light, and when the colored layer 132G transmits green light, the film thickness of the conductive layer 112R is set to strengthen the red light. It is desirable to set the film thickness of the conductive layer 112G to strengthen the light, and when the colored layer 132B transmits blue light, it is desirable to set the film thickness of the conductive layer 112B to strengthen the blue light. do. As a result, a microcavity structure can be realized and the color purity of light emitted from the subpixel 110 can be improved. Also, for example, in the configuration shown in Figure 2 (A), the conductive layer 112R, conductive layer 112G, and conductive layer 112B may each have different film thicknesses. In this case, the microcavity structure can be realized even if the film thicknesses of the EL layer 113R, EL layer 113G, and EL layer 113B are all the same.

In Figure 19(B), the light emitting element 130 has a single structure, but it may also have a tandem structure. In Figure 20 (A), the EL layer 113 includes a light-emitting unit 113a1, a charge generation layer 113b1 on the light-emitting unit 113a1, and a light-emitting unit 113c1 on the charge generation layer 113b1. An example was shown. The light emitting element 130 including the EL layer 113 shown in (A) of FIG. 20 has a two-stage tandem structure. By applying a tandem structure to the light-emitting device 130, current efficiency due to light emission can be increased, and thus the light-emitting efficiency of the light-emitting device 130 can be increased. Alternatively, since the current density flowing through the light emitting device 130 can be lowered with the same light emission luminance, the power consumption of the display device 100 including the light emitting device 130 can be reduced. Additionally, by applying a tandem structure to the light emitting device 130, the reliability of the light emitting device 130 can be increased.

The light emitting unit 113a1 and the light emitting unit 113c1 include at least one light emitting layer. The color of the light emitted by the light emitting unit 113a1 and the color of the light emitted by the light emitting unit 113c1 may be different.

In this specification and the like, the light emitted by the light-emitting layer included in the light-emitting unit is referred to as the light emitted by the light-emitting unit.

For example, the color of the light emitted by the light-emitting layer included in the light-emitting unit 113a1 and the color of the light emitted by the light-emitting layer included in the light-emitting unit 113c1 may have a complementary color relationship. For example, one of the light emitting unit 113a1 and the light emitting unit 113c1 may emit blue light, and the other of the light emitting unit 113a1 and the light emitting unit 113c1 may emit yellow light. For example, one of the light emitting unit 113a1 and the light emitting unit 113c1 may emit blue light, and the other of the light emitting unit 113a1 and the light emitting unit 113c1 may emit red and green light. For example, when the pixel electrode of the light emitting device 130 functions as an anode and the common electrode 115 functions as a cathode, the light emitting unit 113a1 may emit blue light. As a result, the light emitting device 130 can emit white light.

Additionally, the light emitting unit 113a1 and the light emitting unit 113c1 may each include one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer in addition to the light emitting layer. That is, the light emitting unit 113a1 and the light emitting unit 113c1 may include a functional layer. The same configuration can be used for light-emitting units other than the light-emitting unit 113a1 and 113c1.

For example, when the pixel electrode of the light emitting element 130 functions as an anode and the common electrode 115 functions as a cathode, the light emitting unit 113a1 includes, for example, a hole injection layer and a hole transport layer from below. A configuration can be made in which the first functional layer, the light emitting layer, and the second functional layer including the electron transport layer are laminated in this order. Additionally, the light emitting unit 113c1 may include a hole transport layer, a light emitting layer, and an electron transport layer in this order. That is, the light emitting unit 113c1 can be configured, for example, in which a third functional layer including a hole transport layer, a light emitting layer, and a fourth functional layer including an electron transport layer are stacked in this order from the bottom.

Here, the light emitting unit 113a1 and the light emitting unit 113c1 may include an electron blocking layer between the hole transport layer and the light emitting layer. Additionally, a hole blocking layer may be included between the electron transport layer and the light emitting layer. Additionally, the light emitting unit 113c1 may include an electron injection layer between the electron transport layer and the common electrode 115. Additionally, the first functional layer may include one of the hole injection layer and the hole transport layer and may not include the other layer.

Also, for example, when the pixel electrode of the light emitting element 130 functions as a cathode and the common electrode 115 functions as an anode, the light emitting unit 113a1 includes, for example, an electron injection layer and an electron transport layer from below. A configuration can be made in which the first functional layer, the light-emitting layer, and the second functional layer including the hole transport layer are laminated in this order. Additionally, the light emitting unit 113c1 may include an electron transport layer, a light emitting layer, and a hole transport layer in this order. That is, the light emitting unit 113c1 can be configured, for example, in which a third functional layer including an electron transport layer, a light emitting layer, and a fourth functional layer including a hole transport layer are stacked in this order from the bottom.

Here, the light emitting unit 113a1 and the light emitting unit 113c1 may include a hole blocking layer between the electron transport layer and the light emitting layer. Additionally, an electron blocking layer may be included between the hole transport layer and the light emitting layer. Additionally, the light emitting unit 113c1 may include a hole injection layer between the hole transport layer and the common electrode 115. Additionally, the first functional layer may include one of the electron injection layer and the electron transport layer and may not include the other layer.

Additionally, in either case where the pixel electrode of the light emitting element 130 functions as an anode or as a cathode, the light emitting unit 113a1 does not need to include the second functional layer. Additionally, the light emitting unit 113c1 does not need to include at least one of the third functional layer and the fourth functional layer.

The charge generation layer 113b1 has at least a charge generation region. When a voltage is applied between the pixel electrode and the common electrode 115 of the light-emitting device 130, the charge generation layer 113b1 injects electrons into one of the light-emitting unit 113a1 and the light-emitting unit 113c1, and It has a function of injecting holes into the other of (113a1) and the light emitting unit (113c1).

Figure 20(B) shows that the EL layer 113 includes a light-emitting unit 113a2, a charge generation layer 113b2 on the light-emitting unit 113a2, and a light-emitting unit 113c2 on the charge generation layer 113b2, An example including a charge generation layer 113d on the light emitting unit 113c2 and a light emitting unit 113e on the charge generation layer 113d is shown. The light emitting element 130 including the EL layer 113 shown in (B) of FIG. 20 has a three-stage tandem structure. By increasing the number of stages of the tandem structure, the current efficiency according to light emission of the light-emitting device 130 can be appropriately increased, and thus the luminous efficiency of the light-emitting device 130 can be appropriately increased. Alternatively, since the current density flowing through the light emitting device 130 can be appropriately lowered with the same light emission luminance, the power consumption of the display device 100 including the light emitting device 130 can be appropriately reduced. Additionally, the reliability of the light emitting device 130 can be appropriately increased. Additionally, the light emitting element 130 may have a tandem structure of four or more stages.

The light emitting unit 113a2, light emitting unit 113c2, and light emitting unit 113e include at least one light emitting layer. The color of light emitted by at least one of the light emitting unit 113a2, light emitting unit 113c2, and light emitting unit 113e may be different from the color of light emitted by the other light emitting units. For example, the color of light emitted by at least one of the light emitting unit 113a2, light emitting unit 113c2, and light emitting unit 113e may be a complementary color to the color of light emitted by the other light emitting unit.

For example, the light-emitting unit 113a2 and 113e may emit blue light, and the light-emitting unit 113c2 may emit yellow, yellow-green, or green light. For example, the light-emitting unit 113a2 and 113e may emit blue light, and the light-emitting unit 113c2 may emit red, green, and yellow-green light. As a result, the light emitting device 130 can emit white light.

The charge generation layer 113b2 and the charge generation layer 113d have at least a charge generation region. When a voltage is applied between the pixel electrode and the common electrode 115 of the light-emitting device 130, the charge generation layer 113b2 injects electrons into one of the light-emitting unit 113a2 and the light-emitting unit 113c2, and It has the function of injecting holes into the other of (113a2) and the light emitting unit (113c2). When a voltage is applied between the pixel electrode and the common electrode 115 of the light-emitting device 130, the charge generation layer 113d injects electrons into one of the light-emitting unit 113c2 and the light-emitting unit 113e, and It has a function of injecting holes into the other of the light emitting unit 113c2 and 113e.

Figure 21(A) is a modified example of the configuration shown in Figure 10, in which the subpixel 110R includes the colored layer 132R, the subpixel 110G includes the colored layer 132G, and the subpixel (110R) includes the colored layer 132G. An example in which 110B) includes a colored layer 132B is shown. That is, FIG. 21 (A) is an example of combining the configuration example shown in FIG. 10 and the configuration example shown in FIG. 19 (A).

FIG. 21(B) is an enlarged cross-sectional view of the insulating layer 127 between the two EL layers 113 shown in FIG. 21(A) and the surrounding area. Additionally, in Figure 21 (B), a conductive layer 112R and a conductive layer 112G are shown as the conductive layer 112. Additionally, the shapes of the mask layer 118, the insulating layer 125, and the insulating layer 127 shown in (B) of FIG. 21 are the same as those in (A) of FIG. 11.

In the display device of one embodiment of the present invention, the EL layer is provided in an island shape for each light-emitting element, thereby suppressing the occurrence of horizontal leakage current between subpixels. As a result, crosstalk caused by unintended light emission can be suppressed, making it possible to realize a display device with extremely high contrast. In addition, by providing an insulating layer having a tapered shape at the end between adjacent island-shaped EL layers, occurrence of disconnection during formation of the common electrode is suppressed, and also, local thin film thickness is formed in the common electrode. It can be suppressed. As a result, it is possible to suppress occurrence of poor connection due to divided portions in the common layer and common electrode and increase in electrical resistance due to portions where the film thickness is locally thin. As a result, the display device of one embodiment of the present invention can achieve both high definition and high display quality.

Next, the light emitting area of the display device of one embodiment of the present invention will be explained using drawings.

[Configuration Example 5]

Figure 22(A) is a modified example of the configuration shown in Figure 19(A). In addition, in Figure 22 (A), for example, the microcavity structure described above is shown omitting the microcavity structure, and an enlarged cross-sectional view of the vicinity of the subpixel 110R and the subpixel 110G shown in Figure 19 (A) is shown. . Additionally, Figure 22 (B) is a reference cross-sectional view explaining the light emitting area of the display device. In addition, the colored layer 132 and the plug 106 are omitted in Figures 22 (A) and (B).

In FIG. 22 (A) , in addition to the configuration described in FIG. 19 (A) , an area 180 and an area 182 are shown to explain the light emitting area of the display device. Area 180 functions as a light-emitting area of the display device, and area 182 functions as a non-light-emitting area of the display device.

Additionally, in the light emitting area of the display device, an EL layer is provided between a pair of electrodes (also referred to as between the upper and lower electrodes or between the anode and the cathode). The EL layer includes a common layer 114 in addition to the island-shaped EL layer 113. In addition, in (A) of FIG. 22, the EL layer 113 includes a hole injection layer 113-1, a hole transport layer 113-2, a light emitting layer 113-3, and an electron transport layer 113-4. The configuration is exemplified. Additionally, in Figure 22 (A), the common layer 114 functions as an electron injection layer.

Additionally, Figure 22 (B) is a cross-sectional view showing one form of a display device. The display device shown in (B) of FIG. 22 includes an insulating layer 105, a conductive layer 111R on the insulating layer 105, a conductive layer 111G on the insulating layer 105, and a conductive layer 111R. ) on the conductive layer 112R, on the conductive layer 111G, on the conductive layer 112G, on the insulating layer 105, on the conductive layer 111R, on the conductive layer 111G, on the conductive layer 112R, and on the conductive layer 111G. An insulating layer 127b in contact with the layer 112G, an EL layer 113 in contact with the insulating layer 127b, the conductive layer 112R, and the conductive layer 112G, and a common layer ( 114), a common electrode 115 on the common layer 114, and a protective layer 131 on the common electrode 115.

In the light emitting area of the display device shown in FIG. 22B, an EL layer 113 and a common layer 114 are provided as EL layers between a pair of electrodes. The EL layer 113 shown in Figure 22(B) is a continuous film shared by a plurality of light emitting elements, unlike Figure 22(A). In addition, in (B) of FIG. 22, the EL layer 113 includes a hole injection layer 113-1, a hole transport layer 113-2, a light emitting layer 113-3, and an electron transport layer 113-4. The configuration is exemplified. Also, in Figure 22 (B), the common layer 114 functions as an electron injection layer.

In FIG. 22(B), the insulating layer 127b includes the side surface of the conductive layer 111R, the side surface of the conductive layer 111G, a portion of the side surface and top surface of the conductive layer 112R, and the conductive layer 112G. Provided to cover part of the sides and top. In this way, the insulating layer 127b functions as a structure (also called an embankment) that covers a portion of the side surface of the conductive layer and the top surface of the conductive layer. That is, the insulating layer 127b is provided to have a region in contact with the conductive layer 111R, the conductive layer 111G, the conductive layer 112R, and the conductive layer 112G.

Figure 22 (B) shows areas 184 and 186. The area 184 functions as a light-emitting area of the display device, and the area 186 functions as a non-light-emitting area of the display device.

As shown in Figure 22 (A), in the display device of one embodiment of the present invention, each light emitting element has an EL layer 113 (here, a hole injection layer 113-1, a hole transport layer 113-2, and a light emitting layer 113- 3) and the electron transport layer 113-4) are provided in an island shape, thereby suppressing horizontal leakage current between subpixels. In particular, since the hole injection layer 113-1 included in the EL layer 113 is provided in an island shape, horizontal leakage current between subpixels can be appropriately reduced. In addition, since the hole injection layer 113-1 in the EL layer 113 is a layer with higher conductivity than other layers, as shown in (A) of FIG. 22, at least the hole injection layer 113-1 is connected to the adjacent subpixel. A configuration that is separated between them is desirable.

In addition, in Figure 22 (A), the distance (represented by D ₁ ) between a pair of electrodes at the center of the EL layer (EL layer 113 and common layer 114) in the region 180 functioning as the light emitting region and It is preferable that the difference in distance (represented by D ₂ ) between a pair of electrodes at the ends of the EL layer (EL layer 113 and common layer 114) is small. More specifically, the distance (D ₂ ) between a pair of electrodes at the end of the EL layer is preferably less than ±10% of the distance (D ₁ ) between the pair of electrodes at the center of the EL layer, and is ±3 It is more preferable that it is less than %. Uniform light emission can be obtained in the light emitting area by reducing or eliminating the difference between the distance between a pair of electrodes at the center of the EL layer (D ₁ ) and the distance between a pair of electrodes at the ends of the EL layer (D ₂ ). You can.

Meanwhile, as shown in (B) of FIG. 22, when the EL layer 113 is commonly provided between adjacent subpixels, in particular, the hole injection layer 113-1 is commonly used between adjacent subpixels. In this case, there is a possibility that part or all of the area 186 functioning as a non-light-emitting area may emit light. In other words, there is a possibility that horizontal leakage current may occur between subpixels. In addition, in Figure 22 (B), the distance (represented by D ₃ ) between a pair of electrodes at the center of the EL layer (EL layer 113 and common layer 114) in the region 184 functioning as the light emitting region and The difference in the distance (represented by D ₄ ) between a pair of electrodes at the end of the EL layer (EL layer 113 and common layer 114) becomes larger than the difference between D ₁ and D ₂ described above.

Additionally, in Figure 22(B), the distance between a pair of electrodes in the area 186 functioning as a non-emission area (represented by D ₅ ) is longer than the distance between a pair of electrodes at the end of the EL layer (D ₄ ). It gets bigger. Additionally, the distance D ₅ between a pair of electrodes in the region 186 is the sum of the film thickness of the EL layer 113, the film thickness of the common layer 114, and the film thickness of the end portion of the insulating layer 127b. It is a value. For example, when a part of the region 186 functioning as a non-emission region emits light, the distance D ₅ between a pair of electrodes in the region 186 is equal to the region 184 functioning as a light emitting region for light to resonate. ) is different from the distance of resonance of light. Accordingly, when the region 186 emits light, the resonance distance of light is different from that of the region 184, so one or more of the luminance, chromaticity, and light emission direction are different between the region 186 and 184. Additionally, when light emission from the region 184 functioning as a light-emitting region and the region 186 functioning as a non-light-emitting region are mixed, the emission spectrum may be broadened or the emission spectrum may have a shape having multiple peaks. On the other hand, in the configuration shown in Figure 22 (A), since light emission from the non-emission area is suppressed, it is possible to prevent the emission spectrum from broadening or having a plurality of peaks.

Additionally, in a display device, it is desirable to have a configuration in which chromaticity does not change at high brightness (eg, 10000 cd/m ² ) and low brightness (eg, 100 cd/m ² ). Therefore, the structure shown in (A) of Figure 22 is more suitable than the structure shown in (B) of Figure 22.

Figure 23 is a modified example of the configuration shown in Figure 21 (A). Additionally, in FIG. 23 , for example, the microcavity structure described above is omitted, and an enlarged cross-sectional view of the vicinity of the subpixel 110R and the subpixel 110G shown in (A) of FIG. 21 is shown. That is, FIG. 23 is an example of combining the configuration shown in (A) of FIG. 21 and the configuration shown in (A) of FIG. 22.

[Production method example 1]

Hereinafter, an example of a manufacturing method of the display device 100 having the configuration shown in (A) of FIG. 2 and (A) of FIG. 18 will be described using the drawings.

Thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device are made using sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), or ALD. It can be formed using laws, etc. CVD methods include plasma chemical vapor deposition (PECVD: Plasma Enhanced CVD) and thermal CVD. Additionally, one of the thermal CVD methods is metal organic chemical vapor deposition (MOCVD).

In addition, thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device can be applied by spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, and roll coating. , curtain coating, or knife coating.

In particular, vacuum processes such as vapor deposition and solution processes such as spin coating or inkjet methods can be used to manufacture light emitting devices. The deposition method includes physical vapor deposition (PVD), such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, and chemical vapor deposition (CVD). In particular, the EL layer is formed using a deposition method (e.g. vacuum deposition method), a coating method (dip coating method, die coating method, bar coating method, spin coating method, or spray coating method, etc.), a printing method (inkjet method, screen (stencil printing), etc.) It can be formed by a method such as a printing method, an offset (flat printing) method, a flexo printing (relief printing) method, a gravure method, or a microcontact method, etc.

Additionally, when processing the thin film that constitutes the display device, it can be processed using, for example, a photolithography method. Alternatively, the thin film may be processed by a nano imprint method, sand blast method, or lift-off method. Additionally, an island-shaped thin film may be formed directly by a film forming method using a shielding mask such as a metal mask.

There are two representative photolithographic methods: One is to form a resist mask on the thin film to be processed, process the thin film by etching, for example, and remove the resist mask. The other is a method of forming a photosensitive thin film and then processing the thin film into a desired shape by performing exposure and development.

For exposure in the photolithography method, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these can be used. In addition, ultraviolet rays, KrF laser light, or ArF laser light can also be used. Additionally, exposure may be performed using a liquid immersion exposure technique. Additionally, exposure may be performed using extreme ultra-violet (EUV) light or X-rays. Additionally, an electron beam may be used instead of the light used for exposure. The use of extreme ultraviolet light, X-rays, or electron beams is preferable because very fine processing can be performed. Additionally, when exposure is performed by scanning a beam such as an electron beam, a photomask is not necessary.

A dry etching method, a wet etching method, or a sand blasting method can be used to etch the thin film.

In order to manufacture the display device 100 having the configuration shown in (A) of FIG. 2 and (A) of FIG. 18, first, as shown in (A) of FIG. 24, insulation is placed on a substrate (not shown). A layer 101 is formed. Next, a conductive layer 102 and a conductive layer 109 are formed on the insulating layer 101, and an insulating layer 103 is formed on the insulating layer 101 to cover the conductive layer 102 and the conductive layer 109. . Next, an insulating layer 104 is formed on the insulating layer 103, and an insulating layer 105 is formed on the insulating layer 104.

As a substrate, a substrate having heat resistance at least sufficient to withstand subsequent heat treatment can be used. When using an insulating substrate as the substrate, a glass substrate, quartz substrate, sapphire substrate, ceramic substrate, or organic resin substrate can be used. Additionally, semiconductor substrates such as single crystal semiconductor substrates and polycrystalline semiconductor substrates made of silicon or carbonized silicon, etc., compound semiconductor substrates made of silicon germanium, etc., or SOI substrates can be used.

Additionally, in Figure 24 (A), a cross-sectional view between A1-A2 and a cross-sectional view between B1-B2 are shown side by side. The same applies to subsequent drawings explaining examples of manufacturing methods of display devices.

Next, as shown in (A) of FIG. 24, an opening reaching the conductive layer 102 is formed in the insulating layer 105, 104, and 103. A plug 106 is then formed to fill the opening.

Subsequently, as shown in (A) of FIG. 24, on the plug 106 and on the insulating layer 105, a conductive layer 111R, a conductive layer 111G, a conductive layer 111B, and a conductive layer 111C are formed. A conductive film 111f is formed. For example, sputtering or vacuum deposition may be used to form the conductive film 111f. Additionally, for example, a metal material can be used as the conductive film 111f.

The conductive film 111f has a structure in which three layers are stacked in this order from below: a film that later becomes the conductive layer 111a, a film that later becomes the conductive layer 111b, and a film that later becomes the conductive layer 111c. You can. Alternatively, the conductive film 111f can have a structure in which two layers, a film that later becomes the conductive layer 111a and a film that later becomes the conductive layer 111b, are stacked in this order from the bottom. For example, titanium can be used as the conductive layer 111a, aluminum can be used as the conductive layer 111b, and titanium can be used as the conductive layer 111c. Alternatively, the conductive film 111f may have a single-layer structure.

Next, as shown in (B) of FIG. 24, the conductive film 111f is processed using, for example, a photolithography method to form a conductive layer 111R, a conductive layer 111G, a conductive layer 111B, and a conductive layer ( 111C) is formed. Specifically, for example, after forming a resist mask, a portion of the conductive film 111f is removed by etching. When a metal material is used as the conductive film 111f, the conductive film 111f can be removed by, for example, a dry etching method. Here, for example, when part of the conductive film 111f is removed by dry etching, a concave portion may be formed in an area of the insulating layer 105 that does not overlap the conductive layer 111.

The conductive layer 111R, the conductive layer 111G, the conductive layer 111B, and the conductive layer 111C are conductive layers ( It can be a structure in which three layers, 111a), a conductive layer 111b on the conductive layer 111a, and a conductive layer 111c on the conductive layer 111b, are stacked. In addition, the conductive layer 111R, the conductive layer 111G, the conductive layer 111B, and the conductive layer 111C are conductive layers as shown in FIGS. 3 (A), (B), and 4 (B). It can be a structure in which two layers of (111a) and a conductive layer (111b) on the conductive layer (111a) are stacked. Additionally, the conductive layer 111R, the conductive layer 111G, the conductive layer 111B, and the conductive layer 111C may have a single-layer structure as shown in FIG. 4(A).

Subsequently, as shown in (C) of FIG. 24, a conductive layer ( A conductive film 112f that becomes the conductive layer 112R), the conductive layer 112G, the conductive layer 112B, and the conductive layer 112C is formed. For example, sputtering or vacuum deposition may be used to form the conductive film 112f.

When forming the conductive layer 112 having the structure shown in FIG. 2 (B1) and FIG. 3 (A), for example, a conductive oxide can be used as the conductive film 112f. In addition, when forming the conductive layer 112 of the configuration shown in Figure 2 (B2) and Figure 3 (B), the conductive film 112f is formed from below with a film that later becomes the conductive layer 112a and a later conductive layer ( 112b) can have a structure in which two layers of the film are stacked in this order. For example, a metal material such as titanium, silver, or an alloy containing silver can be used as the film forming the conductive layer 112a, and a conductive oxide can be used as the film forming the conductive layer 112b. Additionally, when forming the conductive layer 112 with the configuration shown in Figures 4 (A), (B), and (C), the conductive film 112f is formed from the bottom, the film that will later become the conductive layer 112a, and the film that will later become the conductive layer 112a. A structure can be formed in which three layers, a film that becomes the conductive layer 112b and a film that later becomes the conductive layer 112c, are stacked in this order. For example, a conductive oxide is used as the film forming the conductive layer 112a, silver or an alloy containing silver is used as the film forming the conductive layer 112b, and a conductive oxide is used as the film forming the conductive layer 112c. can be used.

Additionally, the ALD method can be used to form the conductive film 112f. Here, as the conductive film 112f, an oxide containing one or more selected from among indium, tin, zinc, gallium, titanium, aluminum, and silicon may be used. In this case, introduction of a precursor (generally sometimes called a metal precursor, etc.), purging of the precursor, introduction of an oxidizing agent (generally sometimes called a reactive agent, non-metallic precursor, etc.), and purging of the oxidizing agent. The conductive film 112f can be formed by performing one cycle and repeatedly performing the cycle. Here, when forming an oxide film containing multiple types of metals such as indium tin oxide as the conductive film 112f, the composition of the metal can be controlled by varying the number of cycles for each type of precursor.

For example, when forming an indium tin oxide film as the conductive film 112f, after introducing a precursor containing indium, the precursor is purged and an oxidizing agent is introduced to form an In-O film, and then the precursor containing tin is introduced. Afterwards, the precursor is purged and an oxidizing agent is introduced to form a Sn-O film. Here, by setting the number of cycles for forming the In-O film to be greater than the number of cycles for forming the Sn-O film, the number of In atoms included in the conductive film 112f can be increased to a greater number than the number of Sn atoms.

Also, for example, when forming a zinc oxide film as the conductive film 112f, a Zn-O film is formed by the method described above. Also, for example, when forming an aluminum zinc oxide film as the conductive film 112f, a Zn-O film and an Al-O film are each formed by the above-described method. Also, for example, when forming a titanium oxide film as the conductive film 112f, a Ti-O film is formed by the method described above. Also, for example, when forming an indium tin oxide film containing silicon as the conductive film 112f, the In-O film, Sn-O film, and Si-O film are formed by the method described above. Also, for example, when forming a zinc oxide film containing gallium as the conductive film 112f, a Ga-O film and a Zn-O film are formed by the method described above.

As a precursor containing indium, for example, triethyl indium, trimethyl indium, or [1,1,1-trimethyl-N-(trimethylsilyl)amide]-indium can be used. As a precursor containing tin, for example, tin chloride or tetrakis(dimethylamide) tin can be used. As a precursor containing zinc, for example, diethyl zinc or dimethyl zinc can be used. As a precursor containing gallium, for example, triethyl gallium can be used. As a precursor containing titanium, for example, titanium chloride, titanium tetrakis(dimethylamide), or tetraisopropyl titanate can be used. As a precursor containing aluminum, for example, aluminum chloride or trimethylaluminum can be used. A precursor containing silicon, for example, trisilylamine, bis(diethylamino)silane, tris(dimethylamino)silane, bis(tert-butylamino)silane, or bis(ethylmethylamino)silane. can be used. Additionally, as an oxidizing agent, for example, water vapor, oxygen plasma, or ozone gas can be used.

Here, for example, the surface of the conductive layer 111 may be oxidized after the conductive layer 111 is formed but before the conductive film 112f is formed. For example, when the conductive layer 111 is formed and then exposed to the atmosphere, the surface of the conductive layer 111 may be oxidized due to oxygen contained in the atmosphere. Here, when a metal whose electrical resistivity increases due to oxidation is used in the uppermost layer of the conductive layer 111, the electrical resistance at the contact interface between the conductive layer 111 and the conductive layer 112 is that of the conductive layer 111. In some cases, the surface becomes larger than when it is not oxidized. This may cause defects in the manufactured display device, resulting in a display device with low reliability.

Therefore, it is desirable to remove the oxide on the surface of the conductive layer 111 after forming the conductive layer 111 and before forming the conductive film 112f. And after removing the oxide, it is preferable to form the conductive film 112f without exposing it to the atmosphere. As a result, the electrical resistance at the contact interface between the conductive layer 111 and the conductive layer 112 can be reduced. Accordingly, the occurrence of defects in the display device 100 can be suppressed and the display device 100 can be made into a highly reliable display device. The oxide on the surface of the conductive layer 111 can be removed by, for example, reverse sputtering.

The reverse sputtering method refers to a method of modifying the surface to be treated by colliding ions with the surface to be treated, while ions collide with the sputtering target in general sputtering. As a method of colliding ions with the surface to be treated, for example, there is a method of generating plasma near the surface to be treated by applying a high-frequency voltage to the surface to be treated in a gas atmosphere containing group 18 elements such as argon. Additionally, an atmosphere containing nitrogen or oxygen may be used instead of a gas atmosphere containing group 18 elements. The device used in the reverse sputtering method is not limited to a sputtering device, and the same process can be performed in a plasma CVD device or dry etching device.

Next, as shown in (D) of FIG. 24, the conductive film 112f is processed using, for example, a photolithography method to form a conductive layer 112R, a conductive layer 112G, a conductive layer 112B, and a conductive layer ( 112C) is formed. Specifically, for example, after forming a resist mask, a portion of the conductive film 112f is removed by etching. When a conductive oxide is used as the conductive film 112f, the conductive film 112f can be removed by, for example, a wet etching method. The conductive layer 112 is formed to cover the top and side surfaces of the conductive layer 111. Also, for example, when the conductive layer 112 has the structure shown in (B2) of FIG. 2 and a metal material is used as the conductive layer 112a and a conductive oxide is used as the conductive layer 112b, the conductive layer ( After removing a part of the conductive film forming 112b) using a wet etching method, a part of the conductive film forming the conductive layer 112a can be removed using a dry etching method. Additionally, a part of the conductive film forming the conductive layer 112a may be removed by a wet etching method, and a part of the conductive film forming the conductive layer 112b may be removed using a dry etching method.

Here, when the conductive layer 112 has a stacked structure of the conductive layer 112a and the conductive layer 112b as shown in FIGS. 2 (B2) and 3 (B), the conductive layer included in the conductive film 112f A metal material such as titanium, silver, or an alloy containing silver can be used for the film that becomes the conductive layer 112a. Additionally, for the film that becomes the conductive layer 112b included in the conductive film 112f, a conductive oxide such as indium tin oxide can be used, for example. As described above, by using silver or an alloy containing silver as the conductive layer 112a, the reflectance of the pixel electrode to visible light can be increased. Meanwhile, as described above, titanium has superior etching processability compared to silver, so by using titanium in the film forming the conductive layer 112a, the film can be easily processed to form the conductive layer 112a.

Subsequently, it is preferable to perform hydrophobization treatment on the conductive layer 112. In hydrophobization treatment, the surface to be treated can be changed from hydrophilic to hydrophobic or the hydrophobicity of the surface to be treated can be increased. By performing hydrophobization treatment on the conductive layer 112, the adhesion between the conductive layer 112 and the EL layer 113 formed in a later process can be improved and film peeling can be suppressed. Additionally, hydrophobization treatment does not need to be performed.

Hydrophobization treatment can be performed, for example, by fluorine modification of the conductive layer 112. Fluorine modification can be performed, for example, by treatment with a gas containing fluorine, heat treatment, or plasma treatment in a gas atmosphere containing fluorine. As a gas containing fluorine, for example, fluorine gas can be used, and for example, fluorocarbon gas can be used. As the fluorocarbon gas, for example, a lower fluorinated carbon gas such as carbon tetrafluoride (CF ₄ ) gas, C ₄ F ₆ gas, C ₂ F ₆ gas, C ₄ F ₈ gas, or C ₅ F ₈ can be used. You can. Additionally, as a gas containing fluorine, for example, SF ₆ gas, NF ₃ gas, or CHF ₃ gas can be used. Additionally, helium gas, argon gas, hydrogen gas, or oxygen gas can be appropriately added to these gases.

In addition, the surface of the conductive layer 112 can be hydrophobized by subjecting the surface of the conductive layer 112 to plasma treatment in a gas atmosphere containing group 18 elements such as argon and then performing treatment using a silylating agent. . As a silylating agent, hexamethyldisilazane (HMDS) or trimethylsilylimidazole (TMSI) can be used. In addition, the surface of the conductive layer 112 can be hydrophobized by performing plasma treatment in a gas atmosphere containing group 18 elements such as argon and then performing treatment using a silane coupling agent. can do.

By performing plasma treatment on the surface of the conductive layer 112 in a gas atmosphere containing group 18 elements such as argon, damage can be caused to the surface of the conductive layer 112. This makes it easier for methyl groups contained in silylating agents such as HMDS to bind to the surface of the conductive layer 112. Additionally, silane coupling due to the silane coupling agent becomes more likely to occur. As a result, the surface of the conductive layer 112 is subjected to plasma treatment in a gas atmosphere containing group 18 elements such as argon, and then treated with a silylating agent or silane coupling agent, thereby forming the surface of the conductive layer 112. The surface can be hydrophobized.

Treatment using a silylating agent or a silane coupling agent can be performed by applying the silylating agent or a silane coupling agent using, for example, a spin coating method or a dipping method. In addition, treatment using a silylating agent or a silane coupling agent can be performed by, for example, forming a film containing a silylating agent or a film containing a silane coupling agent on the conductive layer 112 using a vapor phase method. In the vapor phase method, the material containing the silylating agent or the material containing the silane coupling agent is first volatilized to include the silylating agent or silane coupling agent in the atmosphere. Next, for example, a substrate on which a conductive layer 112 is formed is placed in the above atmosphere. As a result, a film containing a silylating agent or a silane coupling agent can be formed on the conductive layer 112, thereby making the surface of the conductive layer 112 hydrophobic.

Next, as shown in (A) of FIG. 25, the EL film 113Rf, which will later become the EL layer 113R, is placed on the conductive layer 112R, on the conductive layer 112G, on the conductive layer 112B, and on the insulating layer ( 105) Formed above.

As shown in Figure 25 (A), the EL film 113Rf was not formed on the conductive layer 112C. For example, by using an area mask, the EL film 113Rf can be deposited only in a desired area. By employing a film formation process using an area mask and a processing process using a resist mask, a light emitting device can be manufactured in a relatively simple process.

The EL film 113Rf can be formed by, for example, a vapor deposition method, specifically a vacuum vapor deposition method. Additionally, the EL film 113Rf may be formed by a transfer method, a printing method, an inkjet method, or a coating method.

Next, as shown in Figure 25 (A), a mask film 118Rf, which later becomes a mask layer 118R, is formed on the EL film 113Rf, on the conductive layer 112C, and on the insulating layer 105, and a mask layer 118Rf, which later becomes the mask layer 118R. The mask film 119Rf (119R) is formed in this order.

In addition, in this embodiment, an example of forming the mask film with a two-layer structure of the mask film 118Rf and the mask film 119Rf is shown, but the mask film may have a single-layer structure or a stacked structure of three or more layers.

By providing a mask layer on the EL film 113Rf, damage to the EL film 113Rf during the manufacturing process of the display device can be reduced, thereby increasing the reliability of the light emitting device.

A film with high resistance to the processing conditions of the EL film 113Rf, specifically, a film with a high etch selectivity to the EL film 113Rf, is used for the mask film 118Rf. For the mask layer 119Rf, a film with a high etch selectivity with respect to the mask layer 118Rf is used.

Additionally, the mask film 118Rf and the mask film 119Rf are formed at a temperature lower than the heat resistance temperature of the EL film 113Rf. The substrate temperature when forming the mask film 118Rf and the mask film 119Rf is typically 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, and still more preferably 100°C or lower. More preferably, it is 80°C or lower.

It is preferable to use a film that can be removed by a wet etching method for the mask film 118Rf and the mask film 119Rf. By using the wet etching method, damage to the EL film 113Rf can be reduced when processing the mask film 118Rf and the mask film 119Rf compared to the case of using the dry etching method.

For forming the mask film 118Rf and 119Rf, sputtering method, ALD method (thermal ALD method or PEALD method), CVD method, or vacuum deposition method can be used, for example. Additionally, it may be formed using the wet film forming method described above.

Additionally, the mask film 118Rf formed in contact with the EL film 113Rf is preferably formed using a formation method that causes less damage to the EL film 113Rf than the mask film 119Rf. For example, it is preferable to form the mask film 118Rf using the ALD method or vacuum deposition method compared to the sputtering method.

As the mask film 118Rf and the mask film 119Rf, one or more types of, for example, a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, and an inorganic insulating film can be used, respectively.

The mask film 118Rf and the mask film 119Rf include, for example, gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, Alternatively, a metal material such as tantalum, or an alloy material containing the above metal material may be used. In particular, it is preferable to use a low melting point material such as aluminum or silver. By using a metal material capable of shielding ultraviolet rays on one or both of the mask film 118Rf and the mask film 119Rf, irradiation of ultraviolet rays to the EL film 113Rf can be suppressed, thereby reducing the This is desirable because deterioration can be suppressed.

In addition, the mask film 118Rf and the mask film 119Rf include In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), and indium tin zinc oxide (In -Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), or indium tin oxide containing silicon can be used. You can.

In addition, instead of gallium, the element M (M is aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum) , tungsten, and magnesium (one or more types selected from among) may be used. In particular, M is preferably one or more types selected from gallium, aluminum, and yttrium.

Additionally, a film containing a material that has light-shielding properties against light, especially ultraviolet rays, can be used as the mask film. For example, a film that reflects ultraviolet rays or a film that absorbs ultraviolet rays can be used. As the material having light-shielding properties, various materials such as metals, insulators, semiconductors, or semi-metals that have light-shielding properties against ultraviolet rays can be used. However, since part or all of the mask film is removed in a later process, processing by etching A film capable of this is preferable, and a film with good processability is particularly preferable.

For example, semiconductor materials such as silicon and germanium can be used as materials with high affinity for the semiconductor manufacturing process. Also included are oxides and nitrides of the above semiconductor materials. Additionally, non-metallic (semi-metallic) materials such as carbon and their compounds can be mentioned. Also included are metals such as titanium, tantalum, tungsten, chromium, and aluminum, and alloys containing one or more of these. Also included are oxides containing the above metals, such as titanium oxide and chromium oxide, and nitrides such as titanium nitride, chromium nitride, and tantalum nitride.

By using a mask film containing a material that has light-shielding properties against ultraviolet rays, for example, irradiation of ultraviolet rays to the EL layer in an exposure process can be suppressed. By suppressing damage to the EL layer by ultraviolet rays, the reliability of the light emitting device can be improved.

Additionally, a film containing a material that has light-shielding properties against ultraviolet rays has the same effect when used as an insulating film 125f to be described later.

Additionally, various inorganic insulating films that can be used for the protective layer 131 can be used as the mask film 118Rf and the mask film 119Rf, respectively. In particular, an oxide insulating film is preferable because it has higher adhesion to the EL film (113Rf) than a nitride insulating film. For example, an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide may be used for the mask layer 118Rf and the mask layer 119Rf, respectively. As the mask film 118Rf and the mask film 119Rf, an aluminum oxide film can be formed using, for example, an ALD method. Using the ALD method is preferable because damage to the underlying surface, especially the EL layer, can be reduced.

For example, an inorganic insulating film formed using an ALD method, such as an aluminum oxide film, is used as the mask film 118Rf, and an inorganic insulating film formed using a sputtering method is used as the mask film 119Rf, such as In-Ga. -Zn oxide film, aluminum film, or tungsten film can be used.

Additionally, the same inorganic insulating film can be used on both sides of the mask film 118Rf and the insulating layer 125 to be formed later. For example, an aluminum oxide film formed using the ALD method can be used on both the mask film 118Rf and the insulating layer 125. Here, the same film formation conditions may be applied to the mask film 118Rf and the insulating layer 125, or different film formation conditions may be applied. For example, by forming the mask film 118Rf under the same conditions as the insulating layer 125, the mask film 118Rf can be made into an insulating film with high barrier properties to at least one of water and oxygen. Meanwhile, since most or all of the mask film 118Rf is a layer that will be removed in a later process, it is desirable for it to be easy to process. Therefore, it is desirable to form the mask film 118Rf under conditions where the substrate temperature at the time of film formation is lower than that of the insulating layer 125.

An organic material may be used for one or both of the mask film 118Rf and the mask film 119Rf. For example, an organic material that can be dissolved in a chemically stable solvent may be used. In particular, materials soluble in water or alcohol can be suitably used. When forming a film of such a material, it is preferable to apply a material dissolved in a solvent such as water or alcohol by a wet film forming method and then perform a heat treatment to evaporate the solvent. At this time, by performing heat treatment in a reduced pressure atmosphere, the solvent can be removed in a short time at a low temperature, which is preferable because thermal damage to the EL film 113Rf can be reduced.

The mask film 118Rf and the mask film 119Rf contain polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, and alcohol-soluble polyamide resin, respectively. , or organic resins such as fluorine resins such as perfluoropolymers may be used.

For example, as the mask film 118Rf, an organic film (for example, a PVA film) formed using any of the vapor deposition method or the wet film formation method is used, and as the mask film 119Rf, an inorganic film formed using a sputtering method is used. A film (for example, a silicon nitride film) can be used.

Additionally, in the display device of one embodiment of the present invention, a part of the mask film may remain as a mask layer.

Next, as shown in (A) of FIG. 25, a resist mask 190R is formed on the mask film 119Rf. The resist mask 190R can be formed by applying a photosensitive material (photoresist) and performing exposure and development.

The resist mask 190R may be manufactured using either a positive resist material or a negative resist material.

The resist mask 190R is provided at a position overlapping the conductive layer 112R. It is preferable that the resist mask 190R is also provided at a position overlapping the conductive layer 112C. This can prevent damage to the conductive layer 112C during the manufacturing process of the display device. Additionally, there is no need to provide a resist mask 190R over the conductive layer 112C. In addition, the resist mask 190R is provided to cover from the end of the EL film 113Rf to the end of the conductive layer 112C on the EL film 113Rf side, as shown in the cross-sectional view between B1 and B2 in FIG. 25 (A). It is desirable to be

Next, as shown in Figures 25 (A) and (B), a portion of the mask film 119Rf is removed using the resist mask 190R to form the mask layer 119R. The mask layer 119R remains on the conductive layer 112R and on the conductive layer 112C. Thereafter, the resist mask 190R is removed. Next, the mask layer 118R is formed by removing part of the mask film 118Rf using the mask layer 119R as a mask (also called a hard mask).

The mask layer 118Rf and the mask layer 119Rf may be processed using a wet etching method or a dry etching method, respectively. Processing of the mask layer 118Rf and 119Rf is preferably performed by anisotropic etching.

By using the wet etching method, damage to the EL film 113Rf can be reduced when processing the mask film 118Rf and the mask film 119Rf compared to the case of using the dry etching method. When using a wet etching method, it is preferable to use, for example, a developer solution, an aqueous solution of tetramethyl ammonium hydroxide (TMAH), a chemical solution using diluted hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof. do.

Since the EL film 113Rf is not exposed in processing the mask film 119Rf, the range of processing method selection is wider than that in processing the mask film 118Rf. Specifically, when a gas containing oxygen is used as an etching gas when processing the mask film 119Rf, compared to the case where a gas containing oxygen is used as an etching gas when processing the mask film 118Rf, the EL film 113Rf ) can suppress the deterioration of

Additionally, when a dry etching method is used in processing the mask layer 118Rf, deterioration of the EL layer 113Rf can be suppressed by not using a gas containing oxygen as an etching gas. When using a dry etching method, for example, CF ₄ , C ₄ F ₈ , SF ₆ , CHF ₃ , Cl ₂ , H ₂ O, BCl ₃ , or a gas containing a group 18 element is preferably used as the etching gas. do. As a group 18 element, for example, He can be used.

For example, when using an aluminum oxide film formed using the ALD method as the mask film (118Rf), a part of the mask film (118Rf) is etched using a dry etching method using CHF ₃ and He or CHF ₃ and He and CH ₄ . It can be removed. Additionally, when using an In-Ga-Zn oxide film formed using a sputtering method as the mask film 119Rf, a portion of the mask film 119Rf can be removed by a wet etching method using diluted phosphoric acid. Alternatively, part of the mask layer 119Rf may be removed by dry etching using CH ₄ and Ar. Alternatively, a portion of the mask layer 119Rf can be removed by wet etching using diluted phosphoric acid. In addition, when using a tungsten film formed using a sputtering method as the mask film (119Rf), the mask film (119Rf) is formed by a dry etching method using SF ₆ , CF ₄ and O ₂ , or CF ₄ and Cl ₂ and O ₂ Part of can be removed.

The resist mask 190R can be removed by, for example, ashing using oxygen plasma. Alternatively, oxygen gas, CF ₄ , C ₄ F ₈ , SF ₆ , CHF ₃ , Cl ₂ , H ₂ O, BCl ₃ , or group 18 elements may be used. As a group 18 element, for example, He can be used. Alternatively, the resist mask 190R may be removed by wet etching. At this time, since the mask film 118Rf is located on the outermost surface and the EL film 113Rf is not exposed, damage to the EL film 113Rf during the removal process of the resist mask 190R can be suppressed. Additionally, the range of selection methods for removing the resist mask 190R can be expanded.

Next, as shown in Figures 25 (A) and (B), the EL film 113Rf is processed to form the EL layer 113R. For example, the EL layer 113R is formed by removing part of the EL film 113Rf using the mask layer 119R and 118R as a mask.

As a result, as shown in (B) of FIG. 25, the stacked structure of the EL layer 113R, the mask layer 118R, and the mask layer 119R remains on the conductive layer 112R. Additionally, the conductive layer 112G and 112B are exposed.

Figure 25(B) shows an example in which the end of the EL layer 113R is located outside the end of the conductive layer 112R. By using this configuration, the aperture ratio of the pixel can be increased. In addition, although not shown in (B) of FIG. 25, a concave portion may be formed in an area of the insulating layer 105 that does not overlap the EL layer 113R due to the etching process.

Additionally, since the EL layer 113R covers the top and side surfaces of the conductive layer 112R, subsequent processes can be performed without exposing the conductive layer 112R. If the end of the conductive layer 112R is exposed, corrosion may occur, for example, during an etching process. Products generated due to corrosion of the conductive layer 112R may be unstable. For example, in the case of wet etching, there is a risk of dissolving in a solution, and in the case of dry etching, there is a risk of scattering in the atmosphere. If the product is dissolved in a solution or scattered in the atmosphere, it may adhere to, for example, the surface to be treated and the side of the EL layer 113R, adversely affecting the characteristics of the light emitting device or forming a leakage path between a plurality of light emitting devices. there is. Additionally, in areas where the ends of the conductive layer 112R are exposed, the adhesion between layers in contact with each other decreases, so there is a risk that peeling of the EL layer 113R or the conductive layer 112R may easily occur.

Therefore, by forming the EL layer 113R to cover the top and side surfaces of the conductive layer 112R, the yield and characteristics of the light emitting device can be improved, for example.

As described above, the resist mask 190R is preferably provided to cover from the end of the EL layer 113R between B1 and B2 to the end of the conductive layer 112C on the EL layer 113R side. As a result, as shown in (B) of FIG. 25, the mask layer 118R and the mask layer 119R are formed from the end of the EL layer 113R between B1 and B2 to the end of the conductive layer 112C on the EL layer 113R side. Provided to cover up to. Therefore, for example, exposure of the insulating layer 105 between B1 and B2 can be suppressed. As a result, it is possible to prevent the conductive layer 109 from being exposed by removing part of the insulating layer 105, 104, and 103 by etching. Therefore, it is possible to prevent the conductive layer 109 from being unintentionally electrically connected to another conductive layer. For example, short circuiting between the conductive layer 109 and the common electrode 115 formed in a later process can be suppressed.

Processing of the EL film 113Rf is preferably performed by anisotropic etching. In particular, anisotropic dry etching is desirable. Alternatively, wet etching may be used.

When using a dry etching method, deterioration of the EL film 113Rf can be suppressed by not using a gas containing oxygen as the etching gas.

Additionally, a gas containing oxygen may be used as the etching gas. If the etching gas contains oxygen, the etching speed can be increased. Therefore, etching can be performed at low power while maintaining a sufficiently fast etching speed. Therefore, damage to the EL film 113Rf can be suppressed. Additionally, problems such as adhesion of reaction products that occur during etching can be suppressed.

When using dry etching, for example, H ₂ , CF ₄ , C ₄ F ₈ , SF ₆ , CHF ₃ , Cl ₂ , H ₂ O, BCl ₃ or at least one type of group 18 element such as He or Ar. It is preferable to use the gas containing the etching gas as an etching gas. Alternatively, it is preferable to use a gas containing one or more of these and oxygen as the etching gas. Alternatively, oxygen gas may be used as an etching gas. Specifically, for example, a gas containing H ₂ and Ar or a gas containing CF ₄ and He can be used as the etching gas. Also, for example, gases containing CF ₄ , He, and oxygen can be used as the etching gas. Also, for example, a gas containing H ₂ and Ar and a gas containing oxygen can be used as the etching gas.

As described above, in one embodiment of the present invention, the resist mask 190R is formed on the mask film 119Rf, and a portion of the mask film 119Rf is removed using the resist mask 190R to form the mask layer 119R. do. Thereafter, the EL layer 113R is formed by removing part of the EL film 113Rf using the mask layer 119R as a mask. Therefore, it can be said that the EL layer 113R is formed by processing the EL film 113Rf using the photolithography method. Additionally, a portion of the EL film 113Rf may be removed using the resist mask 190R. Afterwards, the resist mask 190R may be removed.

Next, for example, it is desirable to perform hydrophobization treatment on the conductive layer 112G. When processing the EL film 113Rf, for example, the surface state of the conductive layer 112G may change to hydrophilicity. By performing hydrophobization treatment on the conductive layer 112G, for example, the adhesion between the conductive layer 112G and the layer formed in a later process (here, the EL layer 113G) can be improved and film peeling can be suppressed. Additionally, hydrophobization treatment does not need to be performed.

Next, as shown in (C) of FIG. 25, the EL film 113Gf, which will later become the EL layer 113G, is deposited on the conductive layer 112G, on the conductive layer 112B, on the mask layer 119R, and on the insulating layer ( 105) Formed above.

The EL film 113Gf can be formed by the same method as that used to form the EL film 113Rf.

Next, as shown in FIG. 25(C), a mask film 118Gf, which will later become a mask layer 118G, is formed on the EL film 113Gf and on the mask layer 119R, and a mask film (which will later become the mask layer 119G) 119Gf) is formed in this order. Afterwards, a resist mask 190G is formed. The materials and forming methods of the mask film 118Gf and 119Gf are the same as the conditions applicable to the mask film 118Rf and 119Rf. The material and forming method of the resist mask 190G are the same as the conditions applicable to the resist mask 190R.

The resist mask 190G is provided at a position overlapping the conductive layer 112G.

Next, as shown in Figures 25 (C) and (D), a portion of the mask film 119Gf is removed using the resist mask 190G to form the mask layer 119G. The mask layer 119G remains on the conductive layer 112G. Afterwards, the resist mask 190G is removed. Next, the mask layer 118G is formed by removing part of the mask film 118Gf using the mask layer 119G as a mask. Next, the EL film 113Gf is processed to form the EL layer 113G. For example, the EL layer 113G is formed by removing part of the EL film 113Gf using the mask layer 119G and 118G as a mask.

As a result, as shown in (D) of FIG. 25, the stacked structure of the EL layer 113G, the mask layer 118G, and the mask layer 119G remains on the conductive layer 112G. Additionally, the mask layer 119R and the conductive layer 112B are exposed.

Next, for example, it is desirable to perform hydrophobization treatment on the conductive layer 112B. When processing the EL film 113Gf, for example, the surface state of the conductive layer 112B may change to hydrophilicity. For example, by performing hydrophobization treatment on the conductive layer 112B, the adhesion between the conductive layer 112B and the layer formed in a later process (here, the EL layer 113B) can be improved and film peeling can be suppressed. You can. Additionally, hydrophobization treatment does not need to be performed.

Next, as shown in (A) of FIG. 26, the EL film 113Bf, which will later become the EL layer 113B, is deposited on the conductive layer 112B, on the mask layer 119R, on the mask layer 119G, and on the insulating layer ( 105) Formed above.

The EL film 113Bf can be formed by the same method as that used to form the EL film 113Rf.

Next, as shown in (A) of FIG. 26, a mask film 118Bf, which will later become the mask layer 118B, is formed on the EL film 113Bf and on the mask layer 119R, and a mask film (which will later become the mask layer 119B) 119Bf) is formed in this order. Afterwards, a resist mask 190B is formed. The materials and forming methods of the mask film 118Bf and 119Bf are the same as the conditions applicable to the mask film 118Rf and 119Rf. The material and forming method of the resist mask 190B are the same as the conditions applicable to the resist mask 190R.

The resist mask 190B is provided at a position overlapping the conductive layer 112B.

Next, as shown in Figures 26 (A) and (B), a portion of the mask film 119Bf is removed using the resist mask 190B to form the mask layer 119B. The mask layer 119B remains on the conductive layer 112B. Thereafter, the resist mask 190B is removed. Next, the mask layer 118B is formed by removing part of the mask film 118Bf using the mask layer 119B as a mask. Next, the EL film 113Bf is processed to form the EL layer 113B. For example, the EL layer 113B is formed by removing part of the EL film 113Bf using the mask layer 119B and 118B as a mask.

As a result, as shown in (B) of FIG. 26, the stacked structure of the EL layer 113B, the mask layer 118B, and the mask layer 119B remains on the conductive layer 112B. Additionally, the mask layer 119R and 119G are exposed.

Additionally, it is preferable that the side surfaces of the EL layer 113R, the side surfaces of the EL layer 113G, and the side surfaces of the EL layer 113B are respectively perpendicular or substantially perpendicular to the surface to be formed. For example, it is desirable that the angle formed between the surface to be formed and the side surfaces thereof is 60° or more and 90° or less.

As described above, the distance between two adjacent layers of the EL layer 113R, EL layer 113G, and EL layer 113B formed using the photolithography method is 8 μm or less, 5 μm or less, 3 μm or less, and 2 μm or less. Alternatively, it can be narrowed down to 1μm or less. Here, the distance can be defined as, for example, the distance between opposing ends of two adjacent layers of the EL layer 113R, 113G, and EL layer 113B. By narrowing the distance between the island-shaped EL layers 113 in this way, it is possible to provide a display device with high definition and a large aperture ratio.

Subsequently, as shown in (C) of FIG. 26, it is preferable to remove the mask layer 119R, mask layer 119G, and mask layer 119B. Depending on the later process, the mask layer 118R, mask layer 118G, mask layer 118B, mask layer 119R, mask layer 119G, and mask layer 119B may remain in the display device. there is. By removing the mask layer 119R, mask layer 119G, and mask layer 119B in this step, the mask layer 119R, mask layer 119G, and mask layer 119B are prevented from remaining in the display device. It can be suppressed. For example, when a conductive material is used for the mask layer 119R, the mask layer 119G, and the mask layer 119B, the mask layer 119R, the mask layer 119G, and the mask layer 119B are removed in advance. By doing so, the generation of leakage current and the formation of capacitance due to the remaining mask layer 119R, mask layer 119G, and mask layer 119B can be suppressed.

In addition, in this embodiment, the case where the mask layer 119R, the mask layer 119G, and the mask layer 119B are removed is taken as an example, and the mask layer 119R, the mask layer 119G, and the mask layer 119B are explained as an example. ) does not need to be removed. For example, when the mask layer 119R, mask layer 119G, and mask layer 119B contain the material having light-blocking properties against ultraviolet rays described above, the EL layer 113 is removed by proceeding to the next process without removing it. It is desirable because it can protect from ultraviolet rays.

The same method as the mask layer processing process can be used for the mask layer removal process. In particular, by using a wet etching method, damage inflicted to the EL layer 113R, EL layer 113G, and EL layer 113B when removing the mask layer can be reduced compared to the case of using a dry etching method.

Additionally, the mask layer may be removed by dissolving it in a solvent such as water or alcohol. Examples of alcohol include ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

After removing the mask layer, water contained in the EL layer 113R, EL layer 113G, and EL layer 113B, and the surface of the EL layer 113R, the surface of the EL layer 113G, and the surface of the EL layer 113B Drying treatment may be performed to remove water adsorbed. For example, heat treatment can be performed in an inert gas atmosphere or a reduced pressure atmosphere. Heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. Carrying out in a reduced pressure atmosphere is preferable because drying can be carried out at a lower temperature.

Next, as shown in (D) of FIG. 26, the EL layer 113R, EL layer 113G, EL layer 113B, mask layer 118R, mask layer 118G, and mask layer 118B are covered. An insulating film 125f, which later becomes the insulating layer 125, is formed.

As will be described later, an insulating film that will later become the insulating layer 127 is formed in contact with the upper surface of the insulating film 125f. Therefore, it is preferable that the upper surface of the insulating film 125f has a high affinity for the material used for the insulating film, for example, a photosensitive resin composition containing acrylic resin. In order to improve the affinity, it is preferable to hydrophobicize the upper surface of the insulating film 125f or to increase the hydrophobicity by performing surface treatment. For example, it is preferable to carry out the treatment using a silylating agent such as HMDS. By making the upper surface of the insulating film 125f hydrophobic in this way, the insulating film 127f can be formed with high adhesion. Additionally, as surface treatment, the hydrophobization treatment described above may be performed.

Next, as shown in (A) of FIG. 27, an insulating film 127f, which will later become the insulating layer 127, is formed on the insulating film 125f.

The insulating film 125f and the insulating film 127f are preferably formed using a formation method that causes little damage to the EL layer 113R, 113G, and EL layer 113B. In particular, since the insulating film 125f is formed in contact with the side surfaces of the EL layer 113R, EL layer 113G, and EL layer 113B, the EL layer 113R, 113G, and It is preferable that the film be formed using a formation method that causes little damage to the EL layer 113B.

Additionally, the insulating film 125f and the insulating film 127f are formed at a temperature lower than the heat resistance temperature of the EL layer 113R, EL layer 113G, and EL layer 113B, respectively. Additionally, by increasing the substrate temperature at the time of film formation, the insulating film 125f can be made into a film with a low impurity concentration and a high barrier to at least one of water and oxygen even though the film thickness is thin.

The substrate temperature when forming the insulating film 125f and 127f is 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, respectively, and 200°C or lower, 180°C or lower, 160°C or lower, and 150°C. It is preferable that it is below or below 140°C.

The insulating film 125f is preferably formed with a thickness of 3 nm or more, 5 nm or more, or 10 nm or more and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less in the above substrate temperature range.

The insulating film 125f is preferably formed using, for example, an ALD method. Using the ALD method is preferable because damage to film formation can be reduced and a film with high coverage can be formed. As the insulating film 125f, it is preferable to form an aluminum oxide film using, for example, an ALD method.

In addition, the insulating film 125f may be formed using a sputtering method, CVD method, or PECVD method, which has a faster film formation speed than the ALD method. As a result, a highly reliable display device can be manufactured with high productivity.

The insulating film 127f is preferably formed using the wet film forming method described above. The insulating film 127f is preferably formed using a photosensitive material, for example by spin coating, and more specifically, is preferably formed using a photosensitive resin composition containing an acrylic resin.

The insulating film 127f is preferably formed using, for example, a resin composition containing a polymer, an acid generator, and a solvent. A polymer is formed using one or more types of monomers, and has a structure in which one or more types of structural units (also called structural units) are regularly or irregularly repeated. As the acid generator, one or both of a compound that generates an acid by irradiation of light and a compound that generates an acid by heating can be used. The resin composition may further include one or more of a photosensitizer, a sensitizer, a catalyst, an adhesion aid, a surfactant, and an antioxidant.

Additionally, it is preferable to perform heat treatment (also called prebaking) after forming the insulating film 127f. The heat treatment is performed at a temperature lower than the heat resistance temperature of the EL layer 113R, EL layer 113G, and EL layer 113B. The substrate temperature during heat treatment is preferably 50°C or higher and 200°C or lower, more preferably 60°C or higher and 150°C or lower, and still more preferably 70°C or higher and 120°C or lower. As a result, the solvent contained in the insulating film 127f can be removed.

Next, exposure is performed to expose a portion of the insulating film 127f to visible light or ultraviolet rays. Here, when a positive photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet rays are irradiated to areas where the insulating layer 127 is not formed in a later process. The insulating layer 127 is formed in a region sandwiched between any two of the conductive layer 112R, 112G, and 112B, and around the conductive layer 112C. Therefore, visible light or ultraviolet rays are irradiated on the conductive layer 112R, on the conductive layer 112G, on the conductive layer 112B, and on the conductive layer 112C. Additionally, when a negative photosensitive material is used for the insulating layer 127f, visible light or ultraviolet rays are irradiated to the area where the insulating layer 127 is formed.

The width of the insulating layer 127 formed later can be controlled by the exposure area of the insulating film 127f. In this embodiment, the insulating layer 127 is processed to have a portion that overlaps the upper surface of the conductive layer 111.

The light used for exposure preferably contains i-line (wavelength 365 nm). Additionally, the light used for exposure may include at least one of the g-line (wavelength 436 nm) and the h-line (wavelength 405 nm).

Here, by providing a barrier insulating layer against oxygen, such as an aluminum oxide film, as one or both of the mask layer 118 and the insulating film 125f, the EL layer 113R, EL layer 113G, and EL layer ( 113B) can reduce the diffusion of oxygen. When the EL layer is irradiated with light (visible light or ultraviolet rays), the organic compounds contained in the EL layer become excited, and the reaction of oxygen contained in the atmosphere may be promoted. More specifically, when light (visible light or ultraviolet light) is irradiated to the EL layer in an atmosphere containing oxygen, oxygen may be bound to the organic compound contained in the EL layer. By providing the mask layer 118 and the insulating film 125f on the island-shaped EL layer, it is possible to reduce the combination of the organic compound contained in the EL layer and oxygen in the atmosphere.

Next, development is performed as shown in (B1) and (B2) of FIG. 27 to remove the exposed area of the insulating film 127f to form the insulating layer 127a. Furthermore, (B2) in FIG. 27 is an enlarged view of the end portion and vicinity of the EL layer 113G and the insulating layer 127a shown in (B1) of FIG. 27. The insulating layer 127a is formed in a region sandwiched between any two of the conductive layer 112R, 112G, and 112B and in a region surrounding the conductive layer 112C. Here, when using an acrylic resin for the insulating film 127f, it is preferable to use an alkaline solution as a developer, and for example, TMAH can be used.

Next, residues during development (so-called scum) may be removed. Residues can be removed, for example, by performing ashing using oxygen plasma.

Additionally, etching may be performed to adjust the height of the surface of the insulating layer 127a. The insulating layer 127a may be processed by, for example, ashing using oxygen plasma. Also, even when a non-photosensitive material is used as the insulating film 127f, the height of the surface of the insulating film 127f can be adjusted, for example, by ashing.

Subsequently, as shown in (A) and (B) of FIGS. 28, an etching process is performed using the insulating layer 127a as a mask to remove a portion of the insulating film 125f, thereby forming the mask layer 118R and 118G. , and the film thickness of part of the mask layer 118B is thinned. As a result, the insulating layer 125 is formed below the insulating layer 127a. Additionally, the surfaces of thinner portions of the mask layer 118R, 118G, and 118B are exposed. Additionally, Figure 28(B) is an enlarged view of the end portion and vicinity of the EL layer 113G and the insulating layer 127a shown in Figure 28(A). In addition, hereinafter, the etching process using the insulating layer 127a as a mask may be referred to as the first etching process.

The first etching process may be performed by dry etching or wet etching. Additionally, when the insulating film 125f is formed using the same materials as the mask layer 118R, 118G, and 118B, it is preferable because the first etching process can be performed all at once.

As shown in (B) of FIG. 28, etching is performed using the insulating layer 127a, which has a tapered side surface, as a mask, thereby forming the side surfaces of the insulating layer 125, the mask layer 118R, and the mask layer 118G. , and the side upper portion of the mask layer 118B can be relatively easily tapered.

When performing dry etching, it is preferable to use chlorine-based gas. As the chlorine-based gas, one type or a mixture of two or more types selected from Cl ₂ , BCl ₃ , SiCl ₄ , and CCl ₄ can be used. Additionally, one or two or more types of gases selected from oxygen gas, hydrogen gas, helium gas, and argon gas may be mixed and appropriately added to the chlorine-based gas. By using dry etching, thin-thickness regions of the mask layer 118R, 118G, and 118B can be formed with good in-plane uniformity.

As a dry etching device, a dry etching device including a high-density plasma source can be used. As a dry etching device including a high-density plasma source, for example, an inductively coupled plasma (ICP: Inductively Coupled Plasma) etching device can be used. Alternatively, a capacitively coupled plasma (CCP) etching device including parallel plate-type electrodes can be used. A capacitively coupled plasma etching device including parallel plate-shaped electrodes may have a configuration in which a high-frequency voltage is applied to one of the parallel plate-shaped electrodes. Alternatively, a configuration may be used in which a plurality of different high-frequency voltages are applied to one side of a parallel plate-shaped electrode. Alternatively, a configuration may be used in which a high-frequency voltage of the same frequency is applied to each of the parallel plate-shaped electrodes. Alternatively, a configuration may be used in which high-frequency voltages with different frequencies are applied to each of the parallel plate-shaped electrodes.

Additionally, when dry etching is performed, for example, by-products generated by dry etching may be deposited on the top and side surfaces of the insulating layer 127a. Therefore, the components included in the etching gas, the components included in the insulating film 125f, the components included in the mask layer 118R, the mask layer 118G, and the mask layer 118B, etc. are included in the insulating layer 127 after the display device is completed. There are cases where it is included.

Additionally, it is preferable to perform the first etching process by wet etching. By using a wet etching method, damage to the EL layer 113R, EL layer 113G, and EL layer 113B can be reduced compared to the case of using a dry etching method. For example, wet etching can be performed using an alkaline solution. For example, it is desirable to use TMAH, an alkaline solution, for wet etching of an aluminum oxide film. In this case, wet etching can be performed using a puddle method. Additionally, when the insulating film 125f is formed using the same materials as the mask layer 118R, 118G, and 118B, it is preferable because the etching process can be performed in batches.

As shown in Figures 28 (A) and (B), in the first etching process, the mask layer 118R, mask layer 118G, and mask layer 118B are not completely removed, but are etched with the film thickness reduced. Stop processing. In this way, the corresponding mask layer 118R, mask layer 118G, and mask layer 118B remain on the EL layer 113R, EL layer 113G, and EL layer 113B, thereby enabling processing in subsequent processes. It is possible to prevent damage to the EL layer 113R, EL layer 113G, and EL layer 113B.

28 (A) and (B), the mask layer 118R, 118G, and 118B are configured to have thin film thicknesses, but the present invention is not limited to this. For example, depending on the film thickness of the insulating film 125f and the film thicknesses of the mask layer 118R, mask layer 118G, and mask layer 118B, the insulating film 125f may be removed before being processed into the insulating layer 125. 1 In some cases, the etching process is stopped. Specifically, there are cases where only a portion of the insulating film 125f is thinned and the first etching process is stopped. In addition, when the insulating film 125f is formed of the same material as the mask layer 118R, the mask layer 118G, and the mask layer 118B, the insulating film 125f, the mask layer 118R, the mask layer 118G, And there are cases where the boundary of the mask layer 118B becomes unclear. As a result, there are cases where it is not possible to determine whether the insulating layer 125 has been formed and whether the film thicknesses of the mask layer 118R, mask layer 118G, and mask layer 118B have become thinner.

In addition, (A) and (B) of Figures 28 show an example in which the shape of the insulating layer 127a is not changed from (B1) and (B2) of Figures 27, but the present invention is not limited thereto. For example, there are cases where the end of the insulating layer 127a extends to cover the end of the insulating layer 125. Also, for example, the end of the insulating layer 127a may be in contact with the upper surfaces of the mask layer 118R, mask layer 118G, and mask layer 118B. As described above, when exposure is not performed on the insulating layer 127a after development, the shape of the insulating layer 127a may easily change.

Next, it is preferable to irradiate visible light or ultraviolet rays to the insulating layer 127a by performing exposure on the entire substrate. The energy density of the exposure is preferably greater than 0mJ/cm ² and less than 800mJ/cm ² , and more preferably greater than 0mJ/cm ² and less than 500mJ/cm ² . By performing such exposure after development, the transparency of the insulating layer 127a may be improved. Additionally, there are cases where the substrate temperature required for heat treatment to transform the insulating layer 127a into a tapered shape in a later process can be lowered.

Meanwhile, as will be described later, if exposure of the insulating layer 127a is not performed, the shape of the insulating layer 127a may easily change in a later process or the insulating layer 127 may become easily deformed into a tapered shape. Therefore, there are cases where it is desirable not to perform exposure on the insulating layer 127a after development.

For example, when a photocurable resin is used as a material for the insulating layer 127a, polymerization can begin and harden the insulating layer 127a by exposing the insulating layer 127a. Also, in this step, exposure is not performed on the insulating layer 127a, and at least one of post-baking and a second etching process described later is performed while the insulating layer 127a is maintained in a state in which the shape is relatively easy to change. It's also good. As a result, the occurrence of irregularities on the surface forming the common layer 114 and the common electrode 115 can be suppressed, and the occurrence of disconnection in the common layer 114 and the common electrode 115 can be suppressed. Additionally, exposure may be performed after development but before the first etching treatment. Meanwhile, depending on the material (e.g., positive material) of the insulating layer 127a and the conditions of the first etching process, when exposure is performed, the insulating layer 127a may melt due to the chemical solution during the first etching process. . Therefore, it is preferable to perform exposure after the first etching process and before post-baking. As a result, the insulating layer 127a of the desired shape can be stably manufactured with high reproducibility.

Here, irradiation of visible light or ultraviolet light is preferably performed in an atmosphere that does not contain oxygen or an atmosphere with a low oxygen content. For example, the irradiation of visible light or ultraviolet light is preferably performed in an inert gas atmosphere such as a nitrogen atmosphere or a reduced pressure atmosphere. If the irradiation of visible light or ultraviolet light is performed in an atmosphere containing a lot of oxygen, there is a risk that the compound included in the EL layer 113 may be oxidized and deteriorated. However, since deterioration of the EL layer can be suppressed by performing the irradiation of visible light or ultraviolet light in an atmosphere that does not contain oxygen or an atmosphere with a low oxygen content, a display device with higher reliability can be provided.

Next, heat treatment (also called post-baking) is performed as shown in Figures 29 (A) and (B). By performing heat treatment as shown in Figures 29 (A) and (B), the insulating layer 127a can be transformed into an insulating layer 127 having a tapered shape on the side surface. Additionally, as described above, at the end of the first etching process, the shape of the insulating layer 127a has already changed, and the side surface may have a tapered shape. The heat treatment is performed at a temperature lower than the heat resistance temperature of the EL layer 113. Heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 130°C or lower. The heating atmosphere may be an atmospheric atmosphere or an inert gas atmosphere. Additionally, the heating atmosphere may be an atmospheric pressure atmosphere or a reduced pressure atmosphere. Carrying out in a reduced pressure atmosphere is preferable because drying can be carried out at a lower temperature. The substrate temperature of the heat treatment in this process is preferably higher than the heat treatment (pre-baking) after the formation of the insulating film 127f. As a result, the adhesion between the insulating layer 127 and 125 can be improved and the corrosion resistance of the insulating layer 127 can also be improved. Additionally, Figure 29(B) is an enlarged view of the end portion and vicinity of the EL layer 113G and the insulating layer 127 shown in Figure 29(A).

As described above, in one type of display device of the present invention, a material with high heat resistance is used for the light emitting element. Therefore, the pre-baking temperature and post-baking temperature may be set to 100°C or higher, 120°C or higher, or 140°C or higher, respectively. As a result, the adhesion between the insulating layer 127 and 125 can be further improved, and the corrosion resistance of the insulating layer 127 can also be further improved. Additionally, the range of choices of materials that can be used as the insulating layer 127 can be expanded. Additionally, for example, by sufficiently removing the solvent contained in the insulating layer 127, it is possible to suppress impurities such as water and oxygen from entering the EL layer 113.

In the first etching process, the mask layer 118R, the mask layer 118G, and the mask layer 118B are not completely removed, and the mask layer 118R, the mask layer 118G, and the mask layer are thinned. By allowing 118B to remain, it is possible to prevent the EL layer 113R, EL layer 113G, and EL layer 113B from being damaged and deteriorated during, for example, post-baking. Therefore, the reliability of the light emitting device can be increased.

In addition, depending on the material of the insulating layer 127 and the temperature, time, and atmosphere of post-baking, a concave curved shape is formed on the side of the insulating layer 127 as shown in (A) and (B) of FIG. 7. There is. For example, under post-baking conditions, the higher the temperature or the longer the time, the easier it is for the shape of the insulating layer 127 to change, so a concave curved shape may be formed. Additionally, as described above, when exposure is not performed on the insulating layer 127a after development, the shape of the insulating layer 127 may easily change during post-baking.

Subsequently, as shown in (A) and (B) of FIGS. 30, an etching process is performed using the insulating layer 127 as a mask to remove portions of the mask layer 118R, the mask layer 118G, and the mask layer 118B. Remove . Additionally, part of the insulating layer 125 may also be removed. As a result, openings are formed in each of the mask layer 118R, mask layer 118G, and mask layer 118B, and the EL layer 113R, EL layer 113G, EL layer 113B, and conductive layer 112C are formed. The upper surface of is exposed. Also, Figure 30(B) is an enlarged view of the end portion and vicinity of the EL layer 113G and the insulating layer 127 shown in Figure 30(A). In addition, hereinafter, an etching process using the insulating layer 127 as a mask may be referred to as a second etching process.

The end of the insulating layer 125 is covered with the insulating layer 127. In addition, in Figures 30 (A) and (B), the insulating layer 127 covers a portion of the end of the mask layer 118G, specifically the tapered portion formed by the first etching process, and is covered by the second etching process. An example of the tapered portion formed by being exposed is shown. That is, it corresponds to the structure shown in Figures 5 (A) and (B).

If the first etching process is not performed and the insulating layer 125 and the mask layer are all etched after post-baking, the insulating layer 125 and the mask underneath the end of the insulating layer 127 are removed by side etching. There are cases where the layer is lost and a cavity is formed. Due to the cavity, unevenness occurs on the surface forming the common layer 114 and the common electrode 115, making it easy for the common layer 114 and the common electrode 115 to be disconnected. Even if the insulating layer 125 and the mask layer are side-etched in the first etching process to create a cavity, the insulating layer 127 can fill the cavity by performing post-baking afterwards. Afterwards, in the second etching process, a thinner mask layer is etched, so the amount of side etching is small and it becomes difficult to form a cavity, and even if a cavity is formed, it can be very small. Therefore, the surface forming the common layer 114 and the common electrode 115 can be made more flat.

Additionally, as shown in FIGS. 6 (A) and (B) and 8 (A) and (B), the insulating layer 127 may cover the entire edge of the mask layer 118G. For example, there are cases where the end of the insulating layer 127 extends to cover the end of the mask layer 118G. Also, for example, the end of the insulating layer 127 may be in contact with the upper surface of at least one of the EL layer 113R, EL layer 113G, and EL layer 113B. As described above, when exposure is not performed on the insulating layer 127a after development, the shape of the insulating layer 127 may easily change.

The second etching process is performed by wet etching. By using a wet etching method, damage to the EL layer 113R, EL layer 113G, and EL layer 113B can be reduced compared to the case of using a dry etching method. Wet etching can be performed using, for example, an alkaline solution such as TMAH.

Meanwhile, when performing the second etching process using a wet etching method, for example, due to a problem of adhesion between the EL layer 113 and other layers, between the EL layer 113 and the mask layer 118, the EL layer 113 ) and the insulating layer 125, and between the EL layer 113 and the insulating layer 105, the chemical solution used in the second etching treatment may penetrate into the gap and the chemical solution may come into contact with the pixel electrode. . Here, when a chemical comes into contact with both sides of the conductive layer 111 and 112, the conductive layer with a lower natural potential among the conductive layers 111 and 112 may be corroded by galvanic corrosion. For example, if aluminum is used as the conductive layer 111 and indium tin oxide is used as the conductive layer 112, the conductive layer 112 may corrode. As a result, the yield of the display device may decrease. Additionally, the reliability of the display device may decrease.

In the manufacturing method of one type of display device of the present invention, the conductive layer 112 is formed to cover the top and side surfaces of the conductive layer 111, as described above. This allows the second etching even if there is a gap, for example, between the EL layer 113 and the mask layer 118, between the EL layer 113 and the insulating layer 125, and between the EL layer 113 and the insulating layer 105. It is possible to prevent the chemical solution from coming into contact with the conductive layer 111 during processing. As a result, corrosion of the pixel electrode can be suppressed, for example, corrosion of the conductive layer 112 can be suppressed. Therefore, the manufacturing method of one type of display device of the present invention can be a manufacturing method with high yield. Additionally, the manufacturing method of the display device of one embodiment of the present invention can be a manufacturing method that suppresses the occurrence of defects.

As described above, by providing the insulating layer 127, the insulating layer 125, the mask layer 118R, the mask layer 118G, and the mask layer 118B, a common layer 114 and a common layer are formed between each light emitting element. It is possible to suppress occurrence of poor connection due to divided portions of the electrode 115 and increase in electrical resistance due to portions where the film thickness is locally thin. As a result, the display quality of one embodiment of the present invention can be improved.

Additionally, heat treatment may be further performed after exposing parts of the EL layer 113R, 113G, and EL layer 113B. By the heat treatment, water contained in the EL layer 113 and water adsorbed on the surface of the EL layer 113 can be removed. Additionally, the shape of the insulating layer 127 may change due to the heat treatment. Specifically, the insulating layer 127 is formed at the end of the insulating layer 125, the end of the mask layer 118R, the mask layer 118G, and the mask layer 118B, and the EL layer 113R and the EL layer 113G. , and the upper surface of the EL layer 113B in some cases. For example, the insulating layer 127 may have the shape shown in Figures 6 (A) and (B). For example, heat treatment can be performed in an inert gas atmosphere or a reduced pressure atmosphere. The substrate temperature for heat treatment can be 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. It is preferable to use a reduced pressure atmosphere because dehydration can be performed at a lower temperature. However, it is desirable to set the temperature range of the heat treatment appropriately considering the heat resistance temperature of the EL layer 113. Also, considering the heat resistance temperature of the EL layer 113, among the above temperature ranges, 70°C or more and 120°C or less are particularly suitable.

Subsequently, as shown in FIG. 31 (A), a common layer 114 is formed on the EL layer 113R, on the EL layer 113G, on the EL layer 113B, on the conductive layer 112C, and on the insulating layer 127. ) is formed. The common layer 114 may be formed by a method such as deposition (including vacuum deposition), transfer, printing, inkjet, or coating.

Next, as shown in (A) of FIG. 31, a common electrode 115 is formed on the common layer 114. The common electrode 115 can be formed by a method such as sputtering or vacuum deposition. Alternatively, the common electrode 115 may be formed by laminating a film formed by a vapor deposition method and a film formed by a sputtering method.

The common electrode 115 can be formed continuously after the common layer 114 is formed without performing an intermediate process such as etching. For example, after forming the common layer 114 in vacuum, the common electrode 115 can be formed in vacuum without exposing the substrate to the atmosphere. That is, the common layer 114 and the common electrode 115 can be formed through a vacuum integrated process. As a result, the lower surface of the common electrode 115 can be made cleaner than when the common layer 114 is not provided in the display device 100. Therefore, the light emitting device 130 can be made into a light emitting device with high reliability and good characteristics.

Next, as shown in (B) of FIG. 31, a protective layer 131 is formed on the common electrode 115. The protective layer 131 can be formed by a method such as vacuum deposition, sputtering, CVD, or ALD.

Next, by bonding the substrate 120 onto the protective layer 131 using the resin layer 122, a display device having the configuration shown in (A) of FIG. 2 and (A) of FIG. 18 can be manufactured. As described above, the manufacturing method of one type of display device of the present invention can increase yield and suppress the occurrence of defects by forming the conductive layer 112 to cover the top and side surfaces of the conductive layer 111.

Here, after performing the post-baking shown in Figures 29 (A) and (B) to form the insulating layer 127, exposure of the insulating layer 127 may be performed. For example, when the above-described exposure is not performed on the insulating layer 127a, exposure may be performed on the insulating layer 127. For example, exposure of the insulating layer 127 may be performed before forming the common layer 114 shown in Figure 31 (A) after the second etching process shown in Figures 30 (A) and (B). Alternatively, exposure of the insulating layer 127 may be performed after formation of the common electrode 115 shown in FIG. 31(A) and before formation of the protective layer 131 shown in FIG. 31(B). Alternatively, exposure of the insulating layer 127 may be performed after forming the protective layer 131 shown in (B) of FIG. 31. Here, for example, the same conditions as those applicable to exposure to the above-described insulating layer 127a can be applied as conditions to exposure to the insulating layer 127. Additionally, exposure to the insulating layer 127a and exposure to the insulating layer 127 do not need to be performed once, may be performed only once, or may be performed a total of two or more times.

For example, when a photo-curable resin is used as the insulating layer 127, the insulating layer 127 can be cured by exposing the insulating layer 127 to light. This can prevent deformation of the insulating layer 127. Therefore, for example, peeling of the layer on the insulating layer 127 can be suppressed. This allows the display device of one embodiment of the present invention to be a highly reliable display device.

As described above, in the manufacturing method of one type of display device of the present invention, the island-shaped EL layer 113R, the island-shaped EL layer 113G, and the island-shaped EL layer 113B use a fine metal mask. Since it is not formed by forming a film over the entire surface and then processing it, an island-shaped layer can be formed with a uniform thickness. And a high-definition display device or a high-aperture display device can be realized. In addition, even if the definition or aperture ratio is high and the distance between subpixels is very short, it is possible to prevent the EL layer 113R, EL layer 113G, and EL layer 113B from coming into contact with each other in adjacent subpixels. Therefore, horizontal leakage current between subpixels can be suppressed. As a result, crosstalk caused by unintended light emission can be suppressed, making it possible to realize a display device with extremely high contrast.

In addition, by providing an insulating layer 127 having a tapered shape at the end between adjacent island-shaped EL layers 113, occurrence of disconnection during formation of the common electrode 115 is suppressed, and also the common electrode 115 It is possible to suppress the formation of areas with thin film thickness locally. As a result, it is possible to suppress occurrence of poor connection due to divided portions of the common layer 114 and common electrode 115 and an increase in electrical resistance due to portions where the film thickness is locally thin. Accordingly, the display device of one embodiment of the present invention can achieve both high definition and high display quality.

[Production method example 2]

Hereinafter, an example of a manufacturing method of the display device 100 having the configuration shown in FIG. 10 and (C) of FIG. 18 will be described using the drawings. In addition, methods that are different from the methods described in FIGS. 24 (A) to 31 (B) will be mainly described, and methods that are the same as those described in FIGS. 24 (A) to 31 (B) will be appropriately omitted. .

Figures 32 (A) to (C) show the same processes as Figures 24 (A) to (C).

Figure 32 (D1) is an enlarged view of the cross section between B1 and B2 shown in Figure 32 (C). In the example shown in (D1) of FIG. 32, the conductive film 112f has a region overlapping with the conductive layer 109.

FIG. 32 (D2) is a modified example of FIG. 32 (D1) and shows an example in which the conductive film 112f does not overlap the conductive layer 109. For example, after forming the conductive film 112f as shown in (C) of FIG. 32, a part of the conductive film 112f is removed in the region between B1 and B2, thereby forming the configuration shown in (D2) of FIG. 32. can be produced. When performing the process shown in (D2) of FIG. 32, the configuration between B1 and B2 of the manufactured display device 100 becomes, for example, the configuration shown in (A) of FIG. 18.

For example, by removing the conductive film 112f provided in the area overlapping the conductive layer 109, the conductive layer 112C formed in a later process does not overlap the conductive layer 109. Therefore, as described above, for example, the occurrence of parasitic capacitance can be suppressed. Additionally, the conductive layer 112C may be formed through the process shown in (D2) of FIG. 32. That is, the conductive film 112f may be changed to the conductive layer 112C in (D2) of FIG. 32.

Hereinafter, an example of a manufacturing method of the display device 100 will be described without performing the process shown in (D2) of FIG. 32. However, even when the process shown in (D2) of FIG. 32 is performed, the following example manufacturing method will be described. You can refer to it.

Subsequently, it is preferable to perform hydrophobization treatment on the conductive film 112f as described above.

Next, as shown in FIG. 33(A), the EL film 113Rf, which will later become the EL layer 113R, is formed on the conductive film 112f by the same method as shown in FIG. 25(A). Thereafter, the mask film 118Rf, which will later become the mask layer 118R, and the mask film 119Rf, which will later become the mask layer 119R, are placed on the EL film 113Rf and on the conductive film 112f in this order as shown in FIG. 25. It is formed in the same manner as shown in (A).

Next, as shown in (A) of FIG. 33, a resist mask 190R is formed on the mask film 119Rf by the same method as shown in (A) of FIG. 25. The resist mask 190R is provided at a position overlapping the conductive layer 111R. Additionally, the resist mask 190R may be provided at a position overlapping the conductive layer 111C.

Subsequently, as shown in (A) and (B) of FIG. 33, a portion of the mask film 119Rf is removed using the resist mask 190R in the same manner as the method shown in (A) and (B) of FIG. 25. A mask layer 119R is formed. The mask layer 119R remains on the conductive layer 111R and on the conductive layer 111C. Thereafter, the resist mask 190R is removed in the same manner as shown in (A) and (B) of FIG. 25. Next, a portion of the mask film 118Rf is removed using the mask layer 119R as a mask in the same manner as shown in FIGS. 25A and 25B to form the mask layer 118R.

Next, as shown in Figures 33 (A) and (B), the EL film 113Rf is processed in the same manner as the method shown in Figures 25 (A) and (B) to form the EL layer 113R. For example, the EL layer 113R is formed by removing part of the EL film 113Rf using the mask layer 119R and 118R as a mask. As a result, as shown in (B) of FIG. 33, a stacked structure of the EL layer 113R, the mask layer 118R, and the mask layer 119R on the conductive film 112f so as to have an area overlapping with the conductive layer 111R. remains. Additionally, the conductive film 112f is exposed in areas where the mask layer 119R is not provided.

The resist mask 190R is preferably provided to cover from the end of the EL layer 113R between B1 and B2 to the end of the conductive layer 111C on the EL layer 113R side. As a result, as shown in (B) of FIG. 33, the mask layer 118R and the mask layer 119R are formed from the end of the EL layer 113R between B1 and B2 to the end of the conductive layer 111C on the EL layer 113R side. Provided to cover up to. Therefore, for example, exposure of the conductive film 112f between B1 and B2 can be prevented. As a result, it is possible to prevent the conductive layer 109 from being exposed by removing the conductive film 112f, the insulating layer 105, the insulating layer 104, and the insulating layer 103 by etching or the like. Therefore, it is possible to prevent the conductive layer 109 from being unintentionally electrically connected to another conductive layer. For example, short circuiting between the conductive layer 109 and the common electrode 115 formed in a later process can be suppressed.

Next, for example, it is desirable to perform hydrophobization treatment on the conductive film 112f. When processing the EL film 113Rf, for example, the surface state of the conductive film 112f may change to hydrophilicity. For example, by performing hydrophobization treatment on the conductive film 112f, the adhesion between the conductive film 112f and the layer formed in a later process (here, the EL layer 113G) can be improved and film peeling can be suppressed. Additionally, hydrophobization treatment does not need to be performed.

Subsequently, as shown in FIG. 33(C), the EL film 113Gf, which will later become the EL layer 113G, is formed on the conductive film 112f and the mask layer 119R in the same manner as shown in FIG. 25(C). formed on top.

Next, as shown in FIG. 33C, a mask film 118Gf, which will later become a mask layer 118G, is formed on the EL film 113Gf and on the mask layer 119R, and a mask film (which will later become the mask layer 119G) 119Gf) is formed in this order by the same method as shown in (C) of FIG. 25. Afterwards, a resist mask 190G is formed.

The resist mask 190G is provided at a position overlapping with the conductive layer 111G.

Subsequently, as shown in Figures 33 (C) and (D), a portion of the mask film 119Gf is removed using the resist mask 190G in the same manner as shown in Figures 25 (C) and (D). A mask layer 119G is formed. The mask layer 119G remains on the conductive layer 111G. Thereafter, the resist mask 190G is removed in the same manner as shown in Figures 25 (C) and (D). Next, a portion of the mask film 118Gf is removed using the mask layer 119G as a mask in the same manner as shown in FIGS. 25C and 25D to form the mask layer 118G. Next, the EL film 113Gf is processed in the same manner as shown in Figures 25 (C) and (D) to form the EL layer 113G. For example, the EL layer 113G is formed by removing part of the EL film 113Gf using the mask layer 119G and 118G as a mask.

As a result, as shown in (D) of FIG. 33, the stacked structure of the EL layer 113G, the mask layer 118G, and the mask layer 119G remains on the conductive layer 111G. Additionally, the mask layer 119R is exposed, and the conductive film 112f is exposed in areas where neither the mask layer 119R nor the mask layer 119G is provided.

Next, for example, it is desirable to perform hydrophobization treatment on the conductive film 112f. When processing the EL film 113Gf, for example, the surface state of the conductive film 112f may change to hydrophilicity. For example, by performing hydrophobization treatment on the conductive film 112f, the adhesion between the conductive film 112f and the layer formed in a later process (here, the EL layer 113B) can be improved and film peeling can be suppressed. You can. Additionally, hydrophobization treatment does not need to be performed.

Next, as shown in FIG. 34(A), the EL film 113Bf, which will later become the EL layer 113B, is formed on the conductive film 112f by the same method as the method shown in FIG. 26(A), and the mask layer 119R. above, and on the mask layer 119G.

Next, as shown in (A) of FIG. 34, a mask film 118Bf, which later becomes the mask layer 118B, is formed on the EL film 113Bf and on the mask layer 119R, and a mask film (which later becomes the mask layer 119B) 119Bf) is formed in this order by the same method as shown in (A) of FIG. 26. Afterwards, a resist mask 190B is formed.

The resist mask 190B is provided at a position overlapping the conductive layer 111B.

Next, as shown in Figures 34 (A) and (B), a portion of the mask film 119Bf is removed using the resist mask 190B to form the mask layer 119B. The mask layer 119B remains on the conductive layer 111B. Thereafter, the resist mask 190B is removed. Next, the mask layer 118B is formed by removing part of the mask film 118Bf using the mask layer 119B as a mask. Next, the EL film 113Bf is processed to form the EL layer 113B. For example, the EL layer 113B is formed by removing part of the EL film 113Bf using the mask layer 119B and 118B as a mask.

As a result, as shown in (B) of FIG. 34, the stacked structure of the EL layer 113B, the mask layer 118B, and the mask layer 119B remains on the conductive layer 111B. Additionally, the mask layer 119R and 119G are exposed, and the conductive film 112f is exposed in areas where the mask layer 119R, 119G, and mask layer 119B are not provided.

Next, as shown in (B) and (C) of FIGS. 34, a portion of the conductive film 112f is etched, for example, using the mask layer 119R, 119G, and 119B as masks. Removed by law. This forms the conductive layer 112R, the conductive layer 112G, the conductive layer 112B, and the conductive layer 112C. When a conductive oxide is used as the conductive film 112f, the conductive film 112f can be removed by, for example, a wet etching method. The conductive layer 112 is formed to cover the top and side surfaces of the conductive layer 111. Also, for example, when the conductive layer 112 has the structure shown in (B2) of FIG. 2 and a metal material is used as the conductive layer 112a and a conductive oxide is used as the conductive layer 112b, the conductive layer ( After removing a part of the conductive film forming 112b) using a wet etching method, a part of the conductive film forming the conductive layer 112a can be removed using a dry etching method.

Next, as shown in (A) of FIG. 35, it is preferable to remove the mask layer 119R, 119G, and mask layer 119B by the same method as shown in (C) of FIG. 26.

Next, as shown in Figure 35 (B), the conductive layer 112R, the conductive layer 112G, the conductive layer 112B, the EL layer 113R, the EL layer 113G, the EL layer 113B, and the mask layer ( An insulating film 125f, which will later become the insulating layer 125, is formed to cover the mask layer 118R), the mask layer 118G, and the mask layer 118B by the same method as shown in (D) of FIG. 26.

In Figure 35 (C), Figure 36 (A) to (D), Figure 37 (A) and (B), Figure 27 (A), Figure 27 (B1), Figure 28 (A), respectively , the same processes are shown in Figure 29 (A), Figure 30 (A), and Figure 31 (A) and (B). After the process shown in (B) of FIG. 37, a display having the configuration shown in FIG. 10 and the configuration shown in (C) of FIG. 18 by bonding the substrate 120 onto the protective layer 131 using the resin layer 122. Devices can be manufactured.

[Production method example 3]

Hereinafter, an example of a manufacturing method of the display device 100 having the configuration shown in FIG. 14 and (E) of FIG. 18 will be described using the drawings. In addition, methods that are different from the methods described in FIGS. 24 (A) to 31 (B) will be mainly described, and methods that are the same as those described in FIGS. 24 (A) to 31 (B) will be appropriately omitted. .

First, the same processes as those shown in Figures 24 (A) to (D) are performed. Subsequently, as shown in (A) of FIG. 38, the EL film 113Rf, which will later become the EL layer 113R, is formed on the conductive layer 112R and the conductive layer 112G in the same manner as the method shown in FIG. 25 (A). It is formed on the conductive layer 112B and on the insulating layer 105. The EL film 113Rf includes a film 113R1f that later becomes the light-emitting unit 113R1, a charge generation film 113R2f that later becomes the charge generation layer 113R2, and a film 113R3f that later becomes the light-emitting unit 113R3. Includes. In Figure 38(A), the charge generation film 113Rf2 is indicated by a broken line.

Next, as shown in (A) of FIG. 38, a mask film 118Rf, which later becomes a mask layer 118R, is formed on the EL film 113Rf, on the conductive layer 112C, and on the insulating layer 105, and a mask layer 118Rf, which later becomes the mask layer 118R. The mask film 119Rf, which becomes (119R), is formed in this order by the same method as shown in (A) of FIG. 25. Next, as shown in FIG. 38(A), a resist mask 190R is formed on the mask film 119Rf by the same method as shown in FIG. 25(A).

Subsequently, as shown in (A) and (B) of FIG. 38, a portion of the mask film 119Rf is removed using the resist mask 190R in the same manner as the method shown in (A) and (B) of FIG. 25. A mask layer 119R is formed. The mask layer 119R remains on the conductive layer 111R and on the conductive layer 111C. Thereafter, the resist mask 190R is removed in the same manner as shown in (A) and (B) of FIG. 25. Next, a portion of the mask film 118Rf is removed using the mask layer 119R as a mask in the same manner as shown in FIGS. 25A and 25B to form the mask layer 118R.

Next, as shown in Figures 38 (A) and (B), the EL film 113Rf is processed in the same manner as the method shown in Figures 25 (A) and (B) to form the EL layer 113R. For example, the EL layer 113R is formed by removing part of the EL film 113Rf using the mask layer 119R and 118R as a mask. As described above, the EL layer 113R includes a light-emitting unit 113R1, a charge generation layer 113R2 on the light-emitting unit 113R1, and a light-emitting unit 113R3 on the charge generation layer 113R2. Additionally, the charge generation layer 113R2 is indicated by a broken line.

Next, for example, if hydrophobization treatment is performed on the conductive layer 112G, the adhesion between the conductive layer 112G and the layer formed in a later process (here, the EL layer 113G) is increased as described above. , which is desirable because it can suppress membrane peeling. Additionally, hydrophobization treatment does not need to be performed.

Next, as shown in FIG. 38(C), the EL film 113Gf, which will later become the EL layer 113G, is deposited on the conductive layer 112G and the conductive layer 112B in the same manner as the method shown in FIG. 25(C). It is formed on the mask layer 119R and on the insulating layer 105. The EL film 113Gf includes a film 113G1f that later becomes the light-emitting unit 113G1, a charge generation film 113G2f that later becomes the charge generation layer 113G2, and a film 113G3f that later becomes the light-emitting unit 113G3. Includes. In Figure 38(C), the charge generation film 113Gf2 is indicated by a broken line.

Subsequently, as shown in Figure 38(C), a mask film 118Gf, which will later become a mask layer 118G, is formed on the EL film 113Gf and on the mask layer 119R in the same manner as shown in Figure 25(C). And, the mask film 119Gf, which later becomes the mask layer 119G, is formed in this order. Thereafter, a resist mask 190G is formed in the same manner as shown in (C) of FIG. 25.

Subsequently, as shown in Figures 38 (C) and (D), a portion of the mask film 119Gf is removed using the resist mask 190G in the same manner as shown in Figures 25 (C) and (D). A mask layer 119G is formed. Thereafter, the resist mask 190G is removed in the same manner as shown in Figures 25 (C) and (D). Next, a portion of the mask film 118Gf is removed using the mask layer 119G as a mask in the same manner as shown in FIGS. 25C and 25D to form the mask layer 118G. Next, the EL film 113Gf is processed in the same manner as shown in Figures 25 (C) and (D) to form the EL layer 113G. As described above, the EL layer 113G includes a light-emitting unit 113G1, a charge generation layer 113G2 on the light-emitting unit 113G1, and a light-emitting unit 113G3 on the charge generation layer 113G2. Additionally, the charge generation layer 113G2 is indicated by a broken line.

Next, as shown in FIG. 39(A), the EL film 113Bf, which will later become the EL layer 113B, is formed on the conductive layer 112B and the mask layer 119R in the same manner as shown in FIG. 26(A). It is formed on the mask layer 119G and on the insulating layer 105. The EL film 113Bf includes a film 113B1f that later becomes the light-emitting unit 113B1, a charge generation film 113B2f that later becomes the charge generation layer 113B2, and a film 113B3f that later becomes the light-emitting unit 113B3. Includes. In Figure 39(A), the charge generation film 113Bf2 is indicated by a broken line.

Next, as shown in FIG. 39(A), a mask film 118Bf, which will later become the mask layer 118B, is formed on the EL film 113Bf and on the mask layer 119R in the same manner as shown in FIG. 26(A). And, the mask film 119Bf, which later becomes the mask layer 119B, is formed in this order. Afterwards, the resist mask 190B is formed in the same manner as shown in (A) of FIG. 26.

Subsequently, as shown in (A) and (B) of FIG. 39, a part of the mask film 119Bf is removed using the resist mask 190B in the same manner as the method shown in (A) and (B) of FIG. 26. A mask layer 119B is formed. Thereafter, the resist mask 190B is removed in the same manner as shown in (A) and (B) of FIG. 26. Next, the mask layer 118B is formed by removing part of the mask film 118Bf using the mask layer 119B as a mask in the same manner as shown in Figures 26 (A) and (B). Next, the EL film 113Bf is processed in the same manner as shown in Figures 26 (A) and (B) to form the EL layer 113B. As described above, the EL layer 113B includes a light-emitting unit 113B1, a charge generation layer 113B2 on the light-emitting unit 113B1, and a light-emitting unit 113B3 on the charge generation layer 113B2. Additionally, the charge generation layer 113B2 is indicated by a broken line.

39 (C), (D), Figure 40 (A) to (C), Figure 41 (A), (B), Figure 42 (A), (B), Figure 26 (C) , (D), Figure 27 (A), Figure 27 (B1), Figure 28 (A), Figure 29 (A), Figure 30 (A), Figure 31 (A), (B) The same process was shown. After the process shown in (B) of FIG. 42, the substrate 120 is bonded onto the protective layer 131 using the resin layer 122, thereby forming a display having the configuration shown in FIG. 14 and the configuration shown in (E) of FIG. 18. Devices can be manufactured.

[Production method example 4]

Hereinafter, an example of a manufacturing method of the display device 100 having the configuration shown in (A) of FIG. 19 and the configuration shown in (A) of FIG. 18 will be described using the drawings. In addition, methods that are different from the methods described in FIGS. 24 (A) to 31 (B) will be mainly described, and methods that are the same as those described in FIGS. 24 (A) to 31 (B) will be appropriately omitted. .

First, the same processes as those shown in Figures 24 (A) and (B) are performed. As a result, as shown in (A) of FIG. 43, a conductive layer 111R, a conductive layer 111G, a conductive layer 111B, and a conductive layer 111C are formed on the plug 106 and the insulating layer 105. .

Subsequently, as shown in (B) of FIG. 43, a conductive film 112f1 is formed on the conductive layer 111R, on the conductive layer 111G, on the conductive layer 111B, on the conductive layer 111C, and on the insulating layer 105. ) is formed. For example, the conductive film 112f1 can be formed in the same manner as the conductive film 112f shown in (C) of FIG. 24, and the same material as the conductive film 112f can be used.

Next, as shown in Figures 43 (B) and (C), the conductive film 112f1 is processed to form a conductive layer 112B1 covering the top and side surfaces of the conductive layer 111B. Processing of the conductive film 112f1 may be performed in the same manner as processing of the conductive film 112f.

Subsequently, as shown in (D) of FIG. 43, a conductive film 112f2 is formed on the conductive layer 111R, on the conductive layer 111G, on the conductive layer 112B1, on the conductive layer 111C, and on the insulating layer 105. ) is formed. The conductive film 112f2 can be formed in the same manner as the conductive film 112f, and the same material as the conductive film 112f can be used.

Subsequently, as shown in (D) and (E) of FIGS. 43, the conductive film 112f2 is processed to form a conductive layer 112R1 covering the top and side surfaces of the conductive layer 111R, and a conductive layer on the conductive layer 112B1. It forms (112B2). Additionally, in Figure 43(E), the boundary between the conductive layer 112B1 and the conductive layer 112B2 is indicated by a dotted line.

Subsequently, as shown in (A) of FIG. 44, a conductive film 112f3 is formed on the conductive layer 112R1, on the conductive layer 111G, on the conductive layer 112B2, on the conductive layer 111C, and on the insulating layer 105. ) is formed. The conductive film 112f3 can be formed in the same manner as the conductive film 112f, and the same material as the conductive film 112f can be used.

Next, as shown in Figures 44 (A) and (B), the conductive film 112f3 is processed to form a conductive layer 112R2 on the conductive layer 112R1 and a conductive layer covering the top and side surfaces of the conductive layer 111G ( 112G), a conductive layer 112B3 on the conductive layer 112B2, and a conductive layer 112C covering the top and side surfaces of the conductive layer 111C. The conductive layer 112R can be composed of the conductive layer 112R1 and the conductive layer 112R2, and the conductive layer 112B can be composed of the conductive layer 112B1, the conductive layer 112B2, and the conductive layer 112B3. . Processing of the conductive film 112f3 may be performed in the same manner as processing of the conductive film 112f. In addition, in (B) of FIG. 44, the boundary between the conductive layer 112R1 and the conductive layer 112R2, the boundary between the conductive layer 112B1 and the conductive layer 112B2, and the boundary between the conductive layer 112B2 and the conductive layer 112B3. is indicated by a dotted line. The same description is made in subsequent drawings.

As a result, the thickness of each of the conductive layers 112R, 112G, and 112B can be varied. In addition, here, among the conductive layer 112R, the conductive layer 112G, and the conductive layer 112B, the film thickness of the conductive layer 112B was made the thickest and the film thickness of the conductive layer 112G was made the thinnest. One form is not limited to this, and the film thickness of each of the conductive layers 112R, 112G, and 112B can be set appropriately. For example, among the conductive layer 112R, the conductive layer 112G, and the conductive layer 112B, the conductive layer 112R may be the thickest, and the conductive layer 112B may be the thinnest.

In addition, although the film thickness of the conductive layer 112C is set to be the same as that of the conductive layer 112G, one embodiment of the present invention is not limited to this. For example, the thickness of the conductive layer 112C may be thicker than the thickness of the conductive layer 112G. For example, not only when processing the conductive film 112f3 but also when processing the conductive film 112f2, the conductive film may remain so as to cover the top and side surfaces of the conductive layer 111C. In this case, the thickness of the conductive layer 112C can be, for example, the same as that of the conductive layer 112R. Additionally, when processing any of the conductive film 112f1, 112f2, and 112f3, the conductive film may remain so as to cover the top and side surfaces of the conductive layer 111C. In this case, the thickness of the conductive layer 112C can be, for example, the same as that of the conductive layer 112B.

Next, as shown in (C) of FIG. 44, the EL film 113f, which will later become the EL layer 113, is deposited on the conductive layer 112R, on the conductive layer 112G, on the conductive layer 112B, and on the insulating layer ( 105) Formed above. Next, a mask film 118f, which later becomes the mask layer 118, and a mask film 119f, which later becomes the mask layer 119, are formed on the EL film 113f, on the conductive layer 112C, and on the insulating layer 105. are formed in this order.

Next, as shown in FIG. 44C, a resist mask 190 is formed on the mask film 119f. The resist mask 190 is provided at a position overlapping the conductive layer 112R, a position overlapping the conductive layer 112G, and a position overlapping the conductive layer 112B. Additionally, the resist mask 190 is preferably provided at a position overlapping the conductive layer 112C. Additionally, the resist mask 190 is provided to cover from the end of the EL film 113f to the end of the conductive layer 112C on the EL film 113f side, as shown in the cross-sectional view between B1 and B2 in FIG. 44C. It is desirable to be

Next, as shown in Figures 44 (C) and (D), a portion of the mask film 119f is removed using the resist mask 190 to form the mask layer 119. The mask layer 119 remains on the conductive layer 112R, on the conductive layer 112G, on the conductive layer 112B, and on the conductive layer 112C. Afterwards, the resist mask 190 is removed. Next, the mask layer 118 is formed by removing part of the mask film 118f using the mask layer 119 as a mask.

Next, as shown in Figures 44 (C) and (D), the EL film 113f is processed to form the EL layer 113. For example, the EL layer 113 is formed by removing part of the EL film 113f using the mask layer 119 and 118 as a mask.

As a result, as shown in (D) of FIG. 44, the EL layer 113, the mask layer 118, and the mask layer are formed on the conductive layer 112R, the conductive layer 112G, and the conductive layer 112B, respectively. The layered structure of (119) remains. Additionally, between B1 and B2, the mask layer 118 and 119 can be provided to cover from the end of the EL layer 113 to the end of the conductive layer 112C on the EL layer 113 side.

Next, the same processes as those shown in Figures 26(C) to 31(B) are performed. Next, a colored layer 132R, a colored layer 132G, and a colored layer 132B are formed on the protective layer 131. Next, by bonding the substrate 120 onto the colored layer 132 using the resin layer 122, a display device having the configuration shown in (A) of FIG. 19 and the configuration shown in (A) of FIG. 18 can be manufactured.

As described above, the display device 100 having the configuration shown in (A) of FIG. 19 can be manufactured by performing the formation and processing of the EL film 113f, the mask film 118f, and the mask film 119f once. There is no need to do this for each color. Therefore, the manufacturing process of the display device 100 can be simplified. Therefore, the manufacturing cost of the display device 100 can be reduced and the display device 100 can be made into a low-cost display device.

[Production method example 5]

Hereinafter, an example of a manufacturing method of the display device 100 having the configuration shown in (A) of FIG. 21 and (C) of FIG. 18 will be described using the drawings. In addition, methods that are different from the methods described in FIGS. 32 (A) to (C) and FIGS. 33 (A) to 37 (B) are mainly explained, and methods that are the same as the above methods are appropriately omitted.

First, the same processes as those shown in (A) to (C) of Figure 32 are performed. As a result, as shown in (A) of FIG. 45, a conductive layer 111R, a conductive layer 111G, a conductive layer 111B, and a conductive layer 111C are formed on the plug 106 and the insulating layer 105. . Additionally, a conductive film 112f is formed on the conductive layer 111R, the conductive layer 111G, the conductive layer 111B, the conductive layer 111C, and the insulating layer 105.

Next, as shown in (B) of FIG. 45, an EL film 113f, which will later become the EL layer 113, is formed on the conductive film 112f. Next, a mask film 118f, which will later become the mask layer 118, and a mask film 119f, which will later become the mask layer 119, are formed on the EL film 113f and the conductive film 112f in this order.

Next, as shown in FIG. 45B, a resist mask 190 is formed on the mask film 119f. The resist mask 190 is provided at a position overlapping the conductive layer 111R, a position overlapping the conductive layer 111G, and a position overlapping the conductive layer 111B. Additionally, the resist mask 190 is preferably provided at a position overlapping the conductive layer 111C. Additionally, the resist mask 190 is provided to cover from the end of the EL film 113f to the end of the conductive layer 111C on the EL film 113f side, as shown in the cross-sectional view between B1 and B2 in Figure 45 (B). It is desirable to be

Next, as shown in Figures 45 (B) and (C), a portion of the mask film 119f is removed using the resist mask 190 to form the mask layer 119. The mask layer 119 remains on the conductive layer 111R, on the conductive layer 111G, on the conductive layer 111B, and on the conductive layer 111C. Afterwards, the resist mask 190 is removed. Next, the mask layer 118 is formed by removing part of the mask film 118f using the mask layer 119 as a mask.

Next, as shown in Figures 45 (B) and (C), the EL film 113f is processed to form the EL layer 113. For example, the EL layer 113 is formed by removing part of the EL film 113f using the mask layer 119 and 118 as a mask.

As a result, as shown in (C) of FIG. 45, the EL layer 113, the mask layer 118, and the mask layer are formed on the conductive layer 111R, the conductive layer 111G, and the conductive layer 111B, respectively. The layered structure of (119) remains. Additionally, between B1 and B2, the mask layer 118 and 119 can be provided to cover from the end of the EL layer 113 to the end of the conductive layer 111C on the EL layer 113 side.

Next, the same processes as those shown in FIGS. 34(C) to 37(B) are performed. Next, a colored layer 132R, a colored layer 132G, and a colored layer 132B are formed on the protective layer 131. Next, by bonding the substrate 120 onto the colored layer 132 using the resin layer 122, a display device having the configuration shown in (A) of FIG. 21 and (C) of FIG. 18 can be manufactured.

As described above, the display device 100 having the configuration shown in (A) of FIG. 21 can be manufactured by performing the formation and processing of the EL film 113f, the mask film 118f, and the mask film 119f once. There is no need to do this for each color. Therefore, the manufacturing process of the display device 100 can be simplified. Therefore, the manufacturing cost of the display device 100 can be reduced and the display device 100 can be made into a low-cost display device.

This embodiment can be appropriately combined with other embodiments. Additionally, when multiple configuration examples are shown in one embodiment in this specification and the like, the configuration examples can be appropriately combined.

(Embodiment 2)

In this embodiment, a configuration example of a light emitting element that can be used in a display device of one embodiment of the present invention, specifically a configuration example of a light emitting device with a tandem structure, will be described.

Figure 46(A) shows a cross-sectional schematic diagram of the display device 500. The display device 500 includes a light-emitting device 550R that emits red light, a light-emitting device 550G that emits green light, and a light-emitting device 550B that emits blue light.

The light-emitting element 550R has two light-emitting units (light-emitting unit 512R_1 and light-emitting unit 512R_2) with a charge generation layer 531 interposed between a pair of electrodes (electrode 501 and electrode 502). It has a layered structure. Likewise, the light-emitting device 550G includes a light-emitting unit 512G_1, a charge generation layer 531, and a light-emitting unit 512G_2 between a pair of electrodes, and the light-emitting device 550B includes a light-emitting unit 512G_2 between a pair of electrodes. (512B_1), a charge generation layer 531, and a light emitting unit 512B_2.

The electrode 501 functions as a pixel electrode and is provided for each light-emitting element. The electrode 502 functions as a common electrode and is commonly provided to a plurality of light emitting elements.

As shown in (A) of FIG. 46, the light emitting unit 512R_1 includes a layer 521, a layer 522, a light emitting layer 523R, and a layer 524. The light emitting unit 512R_2 includes a layer 522, a light emitting layer 523R, and a layer 524. Additionally, the light emitting element 550R includes a layer 525 between the light emitting unit 512R_2 and the electrode 502. Layer 525 may also be considered part of light emitting unit 512R_2.

When the electrode 501 functions as an anode and the electrode 502 functions as a cathode, the layer 521 includes, for example, a layer containing a material with high hole injection properties (hole injection layer). Additionally, the layer 522 includes, for example, one or both of a layer containing a material with high hole transport properties (hole transport layer) and a layer containing a material with high electron blocking properties (electron blocking layer). Additionally, the layer 524 includes, for example, one or both of a layer containing a material with high electron transport properties (electron transport layer) and a layer containing a material with high hole blocking properties (hole blocking layer). Additionally, the layer 525 includes, for example, a layer containing a material with high electron injection properties (electron injection layer).

When the electrode 501 functions as a cathode and the electrode 502 functions as an anode, for example, layer 521 includes an electron injection layer, and layer 522 includes one or more of an electron transport layer and a hole blocking layer. Layer 524 includes one or both of a hole transport layer and an electron blocking layer, and layer 525 includes a hole injection layer.

In addition, the layer 522, the light-emitting layer 523R, and the layer 524 may have the same structure (material film thickness, etc.) as the light-emitting unit 512R_1 and the light-emitting unit 512R_2, respectively, or may have different structures.

In addition, in (A) of FIG. 46, the layer 521 and the layer 522 are specified separately, but the present invention is not limited thereto. For example, when the layer 521 is configured to have the functions of both a hole injection layer and a hole transport layer, or when the layer 521 is configured to have the functions of both an electron injection layer and an electron transport layer, the layer ( 522) may be omitted.

When manufacturing a light emitting device with a tandem structure, two light emitting units are stacked with the charge generation layer 531 interposed. The charge generation layer 531 has at least a charge generation region. The charge generation layer 531 has a function of injecting electrons into one of the light emitting unit 512R_1 and light emitting unit 512R_2 and holes into the other side when a voltage is applied between the electrode 501 and the electrode 502. has

The light-emitting layer 523R included in the light-emitting device 550R includes a light-emitting material that emits red light, and the light-emitting layer 523G included in the light-emitting device 550G includes a light-emitting material that emits green light, and the light-emitting device 550G includes a light-emitting material that emits green light. The light-emitting layer 523B included in 550B contains a light-emitting material that emits blue light. In addition, the light-emitting device 550G and the light-emitting device 550B each have a configuration in which the light-emitting layer 523R included in the light-emitting device 550R is changed to a light-emitting layer 523G or a light-emitting layer 523B, and other configurations include the light-emitting device ( 550R).

In addition, the layer 521, layer 522, layer 524, and layer 525 may each have the same composition (material, film thickness, etc.) in two or more colors or light emitting elements of all colors, and may be used in light emitting elements of all colors. It may be a different configuration.

A configuration in which a plurality of light-emitting units, such as the light-emitting device 550R, the light-emitting device 550G, and the light-emitting device 550B, are connected in series through the charge generation layer 531 is called a tandem structure in this specification. Meanwhile, a configuration with one light-emitting unit between a pair of electrodes is called a single structure. Additionally, the tandem structure can also be called a stack structure. By using a tandem structure, a light-emitting device capable of emitting high-brightness light can be obtained. Additionally, the tandem structure can reduce the current required to obtain the same luminance compared to the single structure, thereby increasing the reliability of the light emitting device.

The display device 500 of one form of the present invention uses a tandem structure light emitting element and can be said to have an SBS structure. Therefore, it can have both the advantages of the tandem structure and the advantages of the SBS structure. Additionally, the light-emitting element in the display device 500 shown in (A) of FIG. 46 has a structure in which light-emitting units are formed in two stages in series, so it may be called a two-stage tandem structure. Additionally, in the light emitting device 550R having a two-stage tandem structure shown in (A) of FIG. 46, a second light emitting unit including a red light emitting layer is stacked on a first light emitting unit including a red light emitting layer. Similarly, in the light emitting device 550G of the two-stage tandem structure shown in (A) of FIG. 46, a second light emitting unit including a green light emitting layer is stacked on a first light emitting unit including a green light emitting layer, and the light emitting device In 550B, a second light-emitting unit including a blue light-emitting layer is stacked on a first light-emitting unit including a blue light-emitting layer.

Figure 46(B) is a modified example of the display device 500 shown in Figure 46(A). The display device 500 shown in (B) of FIG. 46 is an example in which a plurality of light emitting elements, like the electrode 502, commonly include a layer 525. At this time, the layer 525 may be referred to as a common layer. By providing one or more common layers between a plurality of light emitting devices in this way, the manufacturing process can be simplified and manufacturing costs can be reduced.

The display device 500 shown in (A) of FIG. 47 is an example in which three light emitting units are stacked. In Figure 47 (A), in the light emitting element 550R, a light emitting unit 512R_3 is further stacked on the light emitting unit 512R_2 with a charge generation layer 531 interposed therebetween. The light emitting unit 512R_3 has the same configuration as the light emitting unit 512R_2. Additionally, the same applies to the light-emitting unit 512G_3 included in the light-emitting device 550G and the light-emitting unit 512B_3 included in the light-emitting device 550B. In addition, when the light emitting device includes a plurality of charge generation layers 531, two or more or all of the plurality of charge generation layers 531 may have the same structure (material, film thickness, etc.), or all may have different structures. .

Figure 47 (B) shows an example in which n light emitting units (n is an integer of 2 or more) are stacked.

By increasing the number of light-emitting units stacked in this way, the luminance obtained from the light-emitting element with the same amount of current can be increased depending on the number of stacks. Additionally, by increasing the number of stacks of light-emitting units, the current required to obtain the same luminance can be reduced, so the power consumption of the light-emitting element can be reduced depending on the number of stacks.

In the display device 500 shown in Figures 46 (A) and (B) and Figure 47 (A) and (B), the light emitting material of the light emitting layer is not particularly limited. For example, in (A) of FIG. 46, the two light-emitting layers 523R included in the light-emitting element 550R each contain a phosphorescent material, and the two light-emitting layers 523G included in the light-emitting element 550G each contain a fluorescent material. and the two light-emitting layers 523B included in the light-emitting element 550B may each contain a fluorescent material.

Or, for example, in (A) of FIG. 46, the two light-emitting layers 523R included in the light-emitting element 550R each contain a phosphorescent material, and the two light-emitting layers 523G included in the light-emitting element 550G each contain a phosphorescent material. It contains a phosphorescent material, and the two light-emitting layers 523B included in the light-emitting element 550B can each contain a fluorescent material.

In addition, the display device of one embodiment of the present invention has a configuration in which a fluorescent material is used for all light-emitting layers included in the light-emitting element 550R, the light-emitting element 550G, and the light-emitting element 550B, or the light-emitting element 550R and the light-emitting element ( A configuration using a phosphorescent material may be applied to all light-emitting layers included in the light-emitting element 550G) and the light-emitting element 550B.

For example, in Figure 46 (A), a phosphorescent material is used in the light-emitting layer 523R included in the light-emitting unit 512R_1, and a fluorescent material is used in the light-emitting layer 523R included in the light-emitting unit 512R_2. Or, a configuration in which a fluorescent material is used in the light-emitting layer 523R included in the light-emitting unit 512R_1 and a phosphorescent material is used in the light-emitting layer 523R included in the light-emitting unit 512R_2, that is, the light-emitting layer in the first stage and the light-emitting layer in the second stage. A configuration using different light-emitting materials as the light-emitting layer may be applied. In addition, although the description herein specifies the light emitting unit 512R_1 and the light emitting unit 512R_2, the same configuration is applied to the light emitting unit 512G_1, the light emitting unit 512G_2, and the light emitting unit 512B_1 and light emitting unit 512B_2. can do.

This embodiment can be appropriately combined with other embodiments. Additionally, when multiple configuration examples are presented in one embodiment in this specification, the configuration examples can be appropriately combined.

(Embodiment 3)

In this embodiment, a display device of one form of the present invention will be described.

In this embodiment, a pixel layout different from that in FIG. 1 is mainly explained. There is no particular limitation on the arrangement of subpixels, and various methods can be applied. Examples of subpixel arrays include stripe array, S-stripe array, matrix array, delta array, Bayer array, and pentile array.

In this embodiment, the top shape of the subpixel shown in the drawing corresponds to the top shape of the light emitting area.

Additionally, the top surface shape of the subpixel includes, for example, polygons such as triangles, quadrangles (including rectangles and squares) and pentagons, and shapes with rounded corners of these polygons, ellipses, or circles.

Additionally, the circuit layout constituting the sub-pixel is not limited to the range of the sub-pixel shown in the drawing, and may be arranged outside it.

The S stripe arrangement is applied to the pixel 108 shown in (A) of FIG. 48. The pixel 108 shown in (A) of FIG. 48 is composed of three subpixels: a subpixel 110R, a subpixel 110G, and a subpixel 110B.

The pixel 108 shown in (B) of FIG. 48 includes a subpixel 110R whose upper surface shape is substantially trapezoidal with rounded corners, a subpixel 110G whose upper surface shape is substantially triangular with rounded corners, and a subpixel 110G whose upper surface shape is substantially triangular with rounded corners. It includes a subpixel 110B that has rounded corners and is substantially square or substantially hexagonal. Additionally, the subpixel 110R has a larger light emitting area than the subpixel 110G. In this way, the shape and size of each subpixel can be determined independently. For example, the higher the reliability of the light emitting device, the smaller the size of the subpixel can be.

A pentile arrangement is applied to the pixels 124a and 124b shown in (C) of FIG. 48. In (C) of FIG. 48, an example in which pixels 124a including the subpixel 110R and 110G and pixels 124b including the subpixel 110G and 110B are arranged alternately. indicated.

A delta arrangement is applied to the pixels 124a and 124b shown in Figures 48 (D) to (F). The pixel 124a has two subpixels (subpixel 110R and subpixel 110G) in the upper row (first row) and one subpixel (subpixel 110B) in the lower row (second row). )). The pixel 124b has one subpixel (subpixel 110B) in the upper row (first row) and two subpixels (subpixel 110R and subpixel 110G) in the lower row (second row). )).

Figure 48(D) is an example where the top shape of each subpixel is substantially square with rounded corners, Figure 48(E) is an example where the top shape of each subpixel is circular, and Figure 48(F) is an example. This is an example in which the top shape of each subpixel is substantially hexagonal with rounded corners.

In Figure 48(F), each subpixel is arranged inside a hexagonal area in which the subpixels are arranged at the highest density. Each subpixel is arranged so that when attention is paid to that one subpixel, it is surrounded by six subpixels. Additionally, subpixels representing light of the same color are provided so that they are not adjacent to each other. For example, when paying attention to the subpixel 110R, three subpixels 110G and three subpixels 110B are provided alternately to surround the subpixel 110R.

Figure 48 (G) is an example in which subpixels of each color are arranged in a zigzag manner. Specifically, the position of the upper side of two subpixels (e.g., subpixel 110R and subpixel 110G, or subpixel 110G and subpixel 110B) arranged in the column direction when viewed from a plan view. is misaligned.

In each pixel shown in Figures 48 (A) to (G), for example, the subpixel 110R is a subpixel R representing red light, and the subpixel 110G is a subpixel G representing green light. It is preferable that the subpixel 110B is subpixel B, which emits blue light. Additionally, the configuration of the subpixel is not limited to this, and the color represented by the subpixel and its arrangement order can be determined appropriately. For example, the subpixel 110G may be a subpixel R representing red light, and the subpixel 110R may be a subpixel G representing green light.

With the photolithography method, the finer the pattern to be processed is, the more difficult it is to ignore the influence of light diffraction, so fidelity is lost when transferring the pattern of the photo mask through exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, a pattern with rounded corners is likely to be formed. Therefore, the top surface shape of the subpixel may be polygonal, oval, or circular with rounded corners.

Additionally, in the method of manufacturing a display device of one embodiment of the present invention, the EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the EL layer material and the curing temperature of the resist material, curing of the resist film may be insufficient. A resist film with insufficient curing may have a shape different from the desired shape during processing. As a result, the top surface shape of the EL layer may be polygonal with rounded corners, oval, or circular. For example, when forming a resist mask with a square top shape, there are cases where a resist mask with a circular top shape is formed so that the top shape of the EL layer becomes circular.

Additionally, in order to change the top surface shape of the EL layer to a desired shape, a technology (OPC (Optical Proximity Correction) technology) that pre-corrects the mask pattern so that the design pattern and the transfer pattern match may be used. Specifically, in OPC technology, for example, a correction pattern is added to the corner of the shape on the mask pattern.

As shown in Figures 49 (A) to (I), the pixel can be configured to include four types of subpixels.

A stripe arrangement is applied to the pixels 108 shown in Figures 49 (A) to (C).

Figure 49 (A) is an example where the top shape of each subpixel is a rectangle, Figure 49 (B) is an example where the top shape of each subpixel is a shape that connects two semicircles and a rectangle, and Figure 49 (B) is an example where the top shape of each subpixel is a rectangle. C) is an example in which the upper surface shape of each subpixel is oval.

A matrix arrangement is applied to the pixels 108 shown in Figures 49 (D) to (F).

Figure 49(D) is an example in which the top shape of each subpixel is square, Figure 49(E) is an example in which the top shape of each subpixel is substantially square with rounded corners, and Figure 49(F) is an example in which the top shape of each subpixel is square. This is an example where the top surface shape of each subpixel is circular.

Figures 49 (G) and (H) show an example in which one pixel 108 is composed of two rows and three columns.

The pixel 108 shown in (G) of FIG. 49 includes three subpixels (subpixel 110R, subpixel 110G, and subpixel 110B) in the upper row (first row), and in the lower row (110B). A row (second row) contains one subpixel (subpixel (110W)). In other words, the pixel 108 has a subpixel 110R in the left column (first column), a subpixel 110G in the center column (second column), and a subpixel 110G in the right column (third column). (110B), and also has sub-pixels (110W) across these three rows.

The pixel 108 shown in (H) of FIG. 49 includes three subpixels (subpixel 110R, subpixel 110G, and subpixel 110B) in the upper row (first row), and in the lower row (110B). Contains three subpixels (110W) in one row (second row). In other words, the pixel 108 has subpixels 110R and 110W in the left column (first column), and subpixels 110G and 110W in the center column (second column). , and has a subpixel (110B) and a subpixel (110W) in the right column (third column). As shown in (H) of FIG. 49, by aligning the arrangement of the subpixels in the upper and lower rows, for example, dust that may be generated during the manufacturing process can be efficiently removed. Therefore, a display device with high display quality can be provided.

In the pixel 108 shown in Figures 49 (G) and (H), the layout of the sub-pixel 110R, sub-pixel 110G, and sub-pixel 110B is a stripe arrangement, so display quality can be improved.

Figure 49(I) shows an example in which one pixel 108 is composed of 3 rows and 2 columns.

The pixel 108 shown in (I) of FIG. 49 includes a subpixel 110R in the upper row (first row), a subpixel 110G in the center row (second row), and a subpixel 110G in the upper row (first row). It includes subpixels 110B from the second row to the second row, and includes one subpixel (subpixel 110W) in the lower row (third row). In other words, the pixel 108 includes a subpixel 110R and a subpixel 110G in the left column (first column) and a subpixel 110B in the right column (second column), and these two Includes ten sub-pixels (110W).

In the pixel 108 shown in (I) of FIG. 49, the layout of the subpixel 110R, subpixel 110G, and subpixel 110B is a so-called S stripe arrangement, so display quality can be improved.

The pixel 108 shown in Figures 49 (A) to (I) is composed of four subpixels: subpixel 110R, subpixel 110G, subpixel 110B, and subpixel 110W. For example, let the subpixel 110R be a subpixel representing red light, the subpixel 110G be a subpixel representing green light, and the subpixel 110B be a subpixel representing blue light. , the subpixel (110W) can be a subpixel that displays white light. In addition, at least one of the subpixel 110R, subpixel 110G, subpixel 110B, and subpixel 110W is a subpixel representing cyan light, a subpixel representing magenta light, and a subpixel representing yellow light. It may be a subpixel or a subpixel representing near-infrared light.

As described above, the display device of one embodiment of the present invention can apply various layouts to pixels composed of subpixels having light-emitting elements.

This embodiment can be appropriately combined with other embodiments. Additionally, when multiple configuration examples are presented in one embodiment in this specification, the configuration examples can be appropriately combined.

(Embodiment 4)

In this embodiment, a display device of one form of the present invention will be described.

The display device of this embodiment can be a high-definition display device. Therefore, the display device of this embodiment can be mounted on the head, for example, in the display unit of an information terminal (wearable device) such as a wristwatch type or bracelet type, a VR device such as a head mounted display (HMD), or a glasses type AR device. It can be used on the display of wearable devices.

Additionally, the display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment includes electronic devices with relatively large screens, such as television devices, desktop or laptop-type personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as digital devices. It can be used in displays of cameras, digital video cameras, digital picture frames, mobile phones, portable game consoles, portable information terminals, and sound reproduction devices.

[Display module]

Figure 50(A) shows a perspective view of the display module 280. The display module 280 has a display device 100A and an FPC 290. Additionally, the display device included in the display module 280 is not limited to the display device 100A, and may be any of the display devices 100B to 100F, which will be described later.

The display module 280 has a substrate 291 and a substrate 292 . The display module 280 has a display unit 281. The display unit 281 is an area that displays an image in the display module 280, and is an area in which light from each pixel provided to the pixel unit 284, which will be described later, can be recognized.

Figure 50(B) is a perspective view schematically showing the configuration of the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. Additionally, a terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

The pixel portion 284 has a plurality of pixels 284a arranged periodically. An enlarged view of one pixel 284a is shown on the right side of Figure 50 (B). Various configurations described in the previous embodiment can be applied to the pixel 284a. Figure 50(B) shows an example where the pixel 284a has the same configuration as the pixel 108 shown in Figure 1.

The pixel circuit portion 283 has a plurality of pixel circuits 283a arranged periodically.

One pixel circuit 283a is a circuit that controls the driving of a plurality of elements included in one pixel 284a. One pixel circuit 283a can be configured to provide three circuits that control light emission of one light-emitting element. For example, the pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (driving transistor), and a capacitor for each light-emitting element. At this time, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source or drain, respectively. In this way, an active matrix display device is realized.

The circuit unit 282 has a circuit that drives each pixel circuit 283a of the pixel circuit unit 283. For example, it is desirable to include one or both of a gate line driving circuit and a source line driving circuit. In addition to this, it may have at least one of an arithmetic circuit, a memory circuit, and a power circuit.

The FPC 290 functions as a wiring for supplying video signals or power potential to the circuit unit 282 from the outside. Additionally, an integrated circuit (IC) may be mounted on the FPC 290.

Since the display module 280 can be configured with one or both of the pixel circuit portion 283 and the circuit portion 282 stacked below the pixel portion 284, the aperture ratio (effective display area ratio) of the display portion 281 is very high. It can be made higher. For example, the aperture ratio of the display portion 281 can be set to 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Additionally, the pixels 284a can be arranged at a very high density, so the resolution of the display unit 281 can be very high. For example, in the display unit 281, the pixels 284a are preferably arranged with a resolution of 2000 ppi or higher, preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and still more preferably 6000 ppi or higher, and 20000 ppi or lower or 30000 ppi or lower. .

Since this type of display module 280 has very high resolution, it can be suitably used in VR devices such as HMDs or glasses-type AR devices. For example, even in the case of a configuration in which the display part of the display module 280 is visible through a lens, the display module 280 includes the display part 281 with very high definition, so the pixels are visible even when the display part is enlarged with a lens. Therefore, a highly immersive display can be performed. Additionally, the display module 280 is not limited to this and can be suitably used in electronic devices having a relatively small display unit. For example, it can be suitably used in the display part of a wearable electronic device such as a wristwatch.

[Display device (100A)]

The display device 100A shown in (A) of FIG. 51 includes a substrate 301, a light-emitting element 130R, a light-emitting element 130G, a light-emitting element 130B, a capacitor 240, and a transistor 310. do.

The substrate 301 corresponds to the substrate 291 in Figures 50 (A) and (B). The transistor 310 is a transistor having a channel formation region on the substrate 301. As the substrate 301, for example, a semiconductor substrate such as a single crystal silicon substrate can be used. The transistor 310 has a portion of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region of the substrate 301 doped with impurities and functions as a source or drain. The insulating layer 314 is provided to cover the side surface of the conductive layer 311.

Additionally, a device isolation layer 315 is provided between two adjacent transistors 310 to be buried in the substrate 301.

Additionally, an insulating layer 261 is provided to cover the transistor 310, and a capacitive element 240 is provided on the insulating layer 261.

The capacitive element 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 positioned between them. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 serves as the dielectric of the capacitor 240. It functions as

The conductive layer 241 is provided on the insulating layer 261 and is embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 through the plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in an area that overlaps the conductive layer 241 with the insulating layer 243 interposed therebetween.

An insulating layer 255 is provided to cover the capacitive element 240, an insulating layer 104 is provided on the insulating layer 255, and an insulating layer 105 is provided on the insulating layer 104. A light-emitting element 130R, a light-emitting element 130G, and a light-emitting element 130B are provided on the insulating layer 105. FIG. 51(A) shows an example in which the light-emitting element 130R, the light-emitting element 130G, and the light-emitting element 130B have the stacked structure shown in FIG. 2(A). An insulating material is provided in the area between adjacent light emitting elements. For example, in Figure 51 (A), an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the above region.

A mask layer 118R is located on the EL layer 113R included in the light-emitting device 130R, a mask layer 118G is located on the EL layer 113G included in the light-emitting device 130G, and the light-emitting device 130B is A mask layer 118B is positioned on the EL layer 113B including the mask layer 118B.

The conductive layer 111R, the conductive layer 111G, and the conductive layer 111B are the insulating layer 243, the insulating layer 255, the insulating layer 104, and the plug 256 embedded in the insulating layer 105. , is electrically connected to one of the source and drain of the transistor 310 through the conductive layer 241 embedded in the insulating layer 254 and the plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 105 and the height of the top surface of the plug 256 coincide or substantially coincide. Various conductive materials can be used in the plug.

Additionally, a protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The substrate 120 is bonded to the protective layer 131 by a resin layer 122. For further details on the components from the light emitting device 130 to the substrate 120, please refer to Embodiment 1. The substrate 120 corresponds to the substrate 292 in Figure 50(A).

Figure 51(B) is a modified example of the display device 100A shown in Figure 51(A). The display device shown in (B) of FIG. 51 includes a colored layer 132R, a colored layer 132G, and a colored layer 132B, and the light emitting element 130 includes the colored layer 132R and the colored layer 132G. , and has an area overlapping with one of the colored layers 132B. In the display device shown in FIG. 51 (B), details about the components from the light emitting element 130 to the substrate 120 may be referred to FIG. 19 (A). In the display device shown in (B) of FIG. 51 , the light emitting element 130 may emit white light, for example. Also, for example, the colored layer 132R may transmit red light, the colored layer 132G may transmit green light, and the colored layer 132B may transmit blue light.

Figure 52(A) shows a modified example of the configuration shown in Figure 51(A), where the light-emitting element 130R, light-emitting element 130G, and light-emitting element 130B have the structure shown in Figure 10. It was. Figure 52(B) is a modified example of the configuration shown in Figure 51(B), where the light-emitting element 130R, light-emitting element 130G, and light-emitting element 130B have the structure shown in Figure 21(A). Branches are given as examples. Figure 53 shows a modified example of the configuration shown in Figure 51 (A), where the light-emitting element 130R, light-emitting element 130G, and light-emitting element 130B have the structure shown in Figure 14.

[Display device (100B)]

The display device 100B shown in FIG. 54 has a configuration in which a transistor 310A and a transistor 310B each having a channel formed on a semiconductor substrate are stacked. Additionally, in the following description of the display device, descriptions of parts that are the same as those of the display device described above may be omitted.

The display device 100B has a structure in which a substrate 301B provided with a transistor 310B, a capacitive element 240, and a light emitting element, and a substrate 301A provided with a transistor 310A are bonded together.

Here, it is desirable to provide an insulating layer 345 on the lower surface of the substrate 301B. Additionally, it is desirable to provide an insulating layer 346 over the insulating layer 261 provided on the substrate 301A. The insulating layer 345 and the insulating layer 346 are insulating layers that function as protective layers and can suppress diffusion of impurities into the substrate 301B and 301A. As the insulating layer 345 and 346, an inorganic insulating film that can be used in the protective layer 131 can be used.

The substrate 301B is provided with a plug 343 that penetrates the substrate 301B and the insulating layer 345. Here, it is desirable to provide an insulating layer 344 by covering the side of the plug 343. The insulating layer 344 is an insulating layer that functions as a protective layer and can suppress diffusion of impurities into the substrate 301B. As the insulating layer 344, an inorganic insulating film that can be used in the protective layer 131 can be used.

Additionally, a conductive layer 342 is provided under the insulating layer 345 on the back side of the substrate 301B (the surface on the substrate 301A side). The conductive layer 342 is preferably provided to be embedded in the insulating layer 335. Additionally, it is preferable that the lower surfaces of the conductive layer 342 and the insulating layer 335 are flattened. Here, the conductive layer 342 is electrically connected to the plug 343.

Meanwhile, a conductive layer 341 is provided on the insulating layer 346 between the substrate 301A and 301B. The conductive layer 341 is preferably provided to be embedded in the insulating layer 336. Additionally, it is preferable that the upper surfaces of the conductive layer 341 and the insulating layer 336 are flattened.

By bonding the conductive layers 341 and 342, the substrates 301A and 301B are electrically connected. Here, by improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335 and the surface formed by the conductive layer 341 and the insulating layer 336, the conductive layer 341 and the conductive layer ( 342) can achieve good bonding.

It is desirable to use the same conductive material for the conductive layer 341 and the conductive layer 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) containing the above-mentioned elements as components. ), etc. can be used. In particular, it is preferable to use copper for the conductive layers 341 and 342. As a result, Cu-Cu direct bonding technology (a technology that realizes electrical conduction by connecting Cu (copper) pads to each other) can be applied.

Figure 55 shows a modified example of the configuration shown in Figure 54, where the light-emitting element 130R, light-emitting element 130G, and light-emitting element 130B have the structure shown in Figure 10. Figure 56 shows a modified example of the configuration shown in Figure 54, where the light-emitting element 130R, light-emitting element 130G, and light-emitting element 130B have the structure shown in Figure 14.

[Display device (100C)]

The display device 100C shown in FIG. 57 has a configuration in which the conductive layers 341 and 342 are joined via bumps 347.

As shown in FIG. 57, by providing a bump 347 between the conductive layers 341 and 342, the conductive layers 341 and 342 can be electrically connected. The bump 347 may be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), or tin (Sn). Additionally, for example, solder may be used as the bump 347. Additionally, an adhesive layer 348 may be provided between the insulating layer 345 and the insulating layer 346. Additionally, when providing the bump 347, the insulating layer 335 and 336 may not be provided.

Figure 58 shows a modified example of the configuration shown in Figure 57, where the light-emitting element 130R, light-emitting element 130G, and light-emitting element 130B have the structure shown in Figure 10. Figure 59 shows a modified example of the configuration shown in Figure 57, where the light-emitting element 130R, light-emitting element 130G, and light-emitting element 130B have the structure shown in Figure 14.

[Display device (100D)]

The display device 100D shown in FIG. 60 differs from the display device 100A mainly in that the transistor configuration is different.

The transistor 320 is a transistor (hereinafter also referred to as an OS transistor) using a metal oxide (also referred to as an oxide semiconductor) in the semiconductor layer in which a channel is formed.

The transistor 320 has a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

The substrate 331 corresponds to the substrate 291 in Figures 50 (A) and (B). As the substrate 331, an insulating substrate or a semiconductor substrate can be used.

An insulating layer 332 is provided on the substrate 331. The insulating layer 332 is a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and oxygen from escaping from the semiconductor layer 321 toward the insulating layer 332. It functions. As the insulating layer 332, for example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, can be used.

A conductive layer 327 is provided on the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and a portion of the insulating layer 326 functions as a first gate insulating layer. It is preferable to use an oxide insulating film such as a silicon oxide film at least in the portion of the insulating layer 326 that is in contact with the semiconductor layer 321. The upper surface of the insulating layer 326 is preferably flat.

The semiconductor layer 321 is provided on the insulating layer 326. The semiconductor layer 321 preferably has a metal oxide film with semiconductor properties. A pair of conductive layers 325 are provided in contact with the semiconductor layer 321 and function as a source electrode and a drain electrode.

An insulating layer 328 is provided to cover the top and side surfaces of the pair of conductive layers 325 and the side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided on the insulating layer 328. The insulating layer 328 functions as a barrier layer that suppresses diffusion of impurities such as water or hydrogen from the insulating layer 264 into the semiconductor layer 321 and oxygen from escaping from the semiconductor layer 321. . As the insulating layer 328, an insulating film similar to the above insulating layer 332 can be used.

Openings reaching the semiconductor layer 321 are provided in the insulating layer 328 and 264. Inside the opening, the insulating layer 323 and the conductive layer 324, which are in contact with the side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325, and the top surface of the semiconductor layer 321, are buried. It is done. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

The upper surface of the conductive layer 324, the upper surface of the insulating layer 323, and the upper surface of the insulating layer 264 are flattened so that their heights match or substantially match, and these are covered to form the insulating layer 329 and the insulating layer. (265) is provided.

The insulating layer 264 and 265 function as interlayer insulating layers. For example, the insulating layer 329 functions as a barrier layer that suppresses diffusion of impurities such as water or hydrogen from the insulating layer 265 into the transistor 320 . As the insulating layer 329, insulating films such as the above insulating layers 328 and 332 can be used.

The plug 274, which is electrically connected to one of the pair of conductive layers 325, is provided to be embedded in the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328. . Here, the plug 274 is a conductive layer ( It is preferable to have 274a) and a conductive layer 274b in contact with the upper surface of the conductive layer 274a. At this time, it is desirable to use a conductive material through which hydrogen and oxygen are difficult to diffuse as the conductive layer 274a.

Figure 61 shows a modified example of the configuration shown in Figure 60, where the light-emitting element 130R, light-emitting element 130G, and light-emitting element 130B have the structure shown in Figure 10. Figure 62 shows a modified example of the configuration shown in Figure 60, where the light-emitting element 130R, light-emitting element 130G, and light-emitting element 130B have the structure shown in Figure 14.

[Display device (100E)]

The display device 100E shown in FIG. 63 has a configuration in which a transistor 320A and a transistor 320B each including an oxide semiconductor are stacked on a semiconductor in which a channel is formed.

The display device 100D can be used for the transistor 320A, transistor 320B, and their surrounding structures.

In addition, here, a configuration is made in which two transistors having oxide semiconductors are stacked, but the configuration is not limited to this. For example, it may be configured to stack three or more transistors.

Figure 64 shows a modified example of the configuration shown in Figure 63, where the light-emitting element 130R, light-emitting element 130G, and light-emitting element 130B have the structure shown in Figure 10. Figure 65 shows a modified example of the configuration shown in Figure 63, where the light-emitting element 130R, light-emitting element 130G, and light-emitting element 130B have the structure shown in Figure 14.

[Display device (100F)]

The display device 100F shown in FIG. 66 has a configuration in which a transistor 310 in which a channel is formed on a substrate 301 and a transistor 320 containing a metal oxide in a semiconductor layer in which a channel is formed are stacked.

An insulating layer 261 is provided to cover the transistor 310, and a conductive layer 251 is provided on the insulating layer 261. Additionally, an insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided on the insulating layer 262. The conductive layer 251 and 252 each function as wiring. Additionally, an insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252, and a transistor 320 is provided on the insulating layer 332. Additionally, an insulating layer 265 is provided to cover the transistor 320, and a capacitive element 240 is provided on the insulating layer 265. The capacitive element 240 and the transistor 320 are electrically connected with a plug 274.

The transistor 320 can be used as a transistor constituting a pixel circuit. Additionally, the transistor 310 can be used as a transistor constituting a pixel circuit or a transistor constituting a driving circuit (gate line driving circuit, source line driving circuit) for driving the pixel circuit. Additionally, the transistor 310 and transistor 320 can be used as transistors that constitute various circuits, such as an operation circuit or a memory circuit.

With such a configuration, not only a pixel circuit but also, for example, a driver circuit can be formed directly below the light emitting element, so the display device can be miniaturized compared to the case where the driver circuit is provided around the display area.

Figure 67 shows a modified example of the configuration shown in Figure 66, where the light-emitting element 130R, light-emitting element 130G, and light-emitting element 130B have the structure shown in Figure 10. Figure 68 shows a modified example of the configuration shown in Figure 66, where the light-emitting element 130R, light-emitting element 130G, and light-emitting element 130B have the structure shown in Figure 14.

[Display device (100G)]

Figure 69 shows a perspective view of the display device 100G, and Figure 70(A) shows a cross-sectional view of the display device 100G.

The display device 100G has a structure in which a substrate 152 and a substrate 151 are bonded. In Figure 69, the substrate 152 is indicated by a broken line.

The display device 100G includes a pixel portion 107, a connection portion 140, a circuit 164, and a wiring 165. Figure 69 shows an example in which the IC 173 and the FPC 172 are mounted on the display device 100G. Therefore, the configuration shown in FIG. 69 may be said to be a display module including a display device 100G, an IC, and an FPC. Here, a display device in which a connector such as FPC is mounted on the substrate or an IC is mounted on the substrate is called a display module.

The connection portion 140 is provided outside the pixel portion 107. The connection portion 140 may be provided along one side or multiple sides of the pixel portion 107. The connection portion 140 may be one or plural. Figure 69 shows an example in which the connection portion 140 is provided to surround the four sides of the pixel portion 107. In the connection portion 140, the common electrode of the light emitting device and the conductive layer are electrically connected, so that a potential can be supplied to the common electrode.

As the circuit 164, for example, a scanning line driving circuit can be used.

The wiring 165 has the function of supplying signals and power to the pixel portion 107 and the circuit 164. The signals and power are input to the wiring 165 from the outside through the FPC 172 or from the IC 173.

Figure 69 shows an example in which the IC 173 is provided on the substrate 151 by the COG (Chip On Glass) method or the COF (Chip On Film) method. For example, an IC including a scan line driving circuit or a signal line driving circuit can be applied to the IC 173. Additionally, the display device 100G and the display module do not need to be provided with an IC. Additionally, the IC may be mounted on an FPC using, for example, the COF method.

In Figure 70(A), a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the pixel portion 107, a portion of the connection portion 140, and an end portion of the display device 100G are shown. An example of a cross section when a part of the included area is cut off is shown.

The display device 100G shown in (A) of FIG. 70 includes a transistor 201 and a transistor 205 between the substrate 151 and the substrate 152, a light emitting element 130R that emits red light, and a light emitting element 130R that emits green light. It includes a light-emitting device 130G that emits blue light, and a light-emitting device 130B that emits blue light.

The light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B each have a stacked structure shown in (A) of FIG. 2, except that the pixel electrodes have different configurations. For details of the light emitting element, please refer to Embodiment 1.

The light emitting device 130R includes a conductive layer 224R, a conductive layer 111R on the conductive layer 224R, and a conductive layer 112R on the conductive layer 111R. All of the conductive layer 224R, the conductive layer 111R, and the conductive layer 112R may be called a pixel electrode, and the conductive layer 111R and the conductive layer 112R may be called a pixel electrode.

The light emitting device 130G includes a conductive layer 224G, a conductive layer 111G on the conductive layer 224G, and a conductive layer 112G on the conductive layer 111G.

The light emitting device 130B includes a conductive layer 224B, a conductive layer 111B on the conductive layer 224B, and a conductive layer 112B on the conductive layer 111B.

The conductive layer 224R is connected to the conductive layer 222b included in the transistor 205 through openings provided in the insulating layer 214, 215, and 213. The end of the conductive layer 111R is located outside the end of the conductive layer 224R. Additionally, as described above, the conductive layer 112R is provided to cover the top and side surfaces of the conductive layer 111R.

Conductive layer 224G, conductive layer 111G, and conductive layer 112G in light-emitting element 130G, and conductive layer 224B, conductive layer 111B, and conductive layer in light-emitting element 130B ( Since 112B) is the same as the conductive layer 224R, conductive layer 111R, and conductive layer 112R in the light emitting element 130R, detailed description is omitted.

A recess is formed in the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B to cover the opening provided in the insulating layer 214. A layer 128 is embedded in the concave portion.

The layer 128 has a function of flattening the concave portions of the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B. On the conductive layer 224R, the conductive layer 224G, the conductive layer 224B, and the layer 128, a conductive layer ( 111R), a conductive layer 111G, and a conductive layer 111B are provided. Therefore, the area overlapping the concave portions of the conductive layer 224R, 224G, and 224B can also be used as a light emitting area, and the aperture ratio of the pixel can be increased.

The layer 128 may be an insulating layer or a conductive layer. For the layer 128, various inorganic insulating materials, organic insulating materials, and conductive materials can be appropriately used. In particular, the layer 128 is preferably formed using an insulating material, and more preferably is formed using an organic insulating material. For example, an organic insulating material that can be used in the insulating layer 127 described above can be applied to the layer 128.

A protective layer 131 is provided on the light-emitting element 130R, the light-emitting element 130G, and the light-emitting element 130B. The protective layer 131 and the substrate 152 are bonded via an adhesive layer 142. The substrate 152 is provided with a light blocking layer 117. A solid sealing structure or a hollow sealing structure can be applied to seal the light emitting device 130. In Figure 70 (A), the space between the substrates 152 and 151 is filled with an adhesive layer 142, and a solid sealing structure is applied. Alternatively, a hollow sealed structure may be applied in which the space is filled with an inert gas (nitrogen or argon, etc.). At this time, the adhesive layer 142 may be provided so as not to overlap the light emitting device. Additionally, the space may be filled with a resin different from the adhesive layer 142 provided in the shape of a border.

In Figure 70 (A), the connection portion 140 includes a conductive layer 224C obtained by processing the same conductive film as the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B, a conductive layer 111R, A conductive layer (111C) obtained by processing the same conductive film as the conductive layer (111G) and the conductive layer (111B), and a conductive film obtained by processing the same conductive film as the conductive layer (112R), the conductive layer (112G), and the conductive layer (112B). An example including the obtained conductive layer 112C is shown.

The display device 100G has a top emission type structure. The light emitted by the light emitting device is emitted toward the substrate 152. It is desirable to use a material with high transparency to visible light for the substrate 152. The pixel electrode contains a material that reflects visible light, and the opposing electrode (common electrode 115) contains a material that transmits visible light.

Both the transistor 201 and the transistor 205 are formed on the substrate 151. These transistors can be manufactured using the same materials and the same process.

On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order. A portion of the insulating layer 211 functions as a gate insulating layer for each transistor. A portion of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Additionally, the number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers.

It is desirable to use a material in which impurities such as water and hydrogen are difficult to diffuse in at least one of the insulating layers covering the transistor. Thereby, the insulating layer can function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

It is preferable to use inorganic insulating films as the insulating layers 211, 213, and 215, respectively. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used. Additionally, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may be used. Additionally, two or more of the above-mentioned insulating films may be stacked and used.

An organic insulating layer is suitable for the insulating layer 214 that functions as a planarization layer. Materials that can be used in the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins. You can. Additionally, the insulating layer 214 may have a stacked structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etch protection layer. As a result, it is possible to suppress the formation of concave portions in the insulating layer 214 during processing of the conductive layer 224R, 111R, or conductive layer 112R. Alternatively, the insulating layer 214 may be provided with a concave portion during processing of the conductive layer 224R, the conductive layer 111R, or the conductive layer 112R.

The transistors 201 and 205 include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a conductive layer 222a and a conductive layer 222b functioning as a source and a drain, It has a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatch pattern was given to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

The structure of the transistor of the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, or an inverted staggered transistor can be used. Additionally, the transistor may have either a top gate type or bottom gate type structure. Alternatively, gates may be provided above and below the semiconductor layer where the channel is formed.

The transistor 201 and transistor 205 have a configuration in which the semiconductor layer in which the channel is formed is sandwiched between two gates. The transistor may be driven by connecting two gates and supplying the same signal to them. Alternatively, the threshold voltage of the transistor may be controlled by supplying a potential for controlling the threshold voltage to one of the two gates and supplying a potential for driving to the other gate.

The crystallinity of the semiconductor material used in the transistor is not particularly limited, and either an amorphous semiconductor or a crystalline semiconductor (microcrystalline semiconductor, polycrystalline semiconductor, single crystalline semiconductor, or semiconductor with a partial crystalline region) may be used. It is preferable to use a semiconductor having crystallinity because deterioration of transistor characteristics can be suppressed.

The semiconductor layer of the transistor preferably contains metal oxide. That is, it is preferable to use a transistor using a metal oxide in the channel formation region in the display device of this embodiment.

Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS or nanocrystalline (nc)-OS.

Alternatively, a transistor using silicon in the channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor (hereinafter referred to as an LTPS transistor) having low temperature polysilicon (LTPS) in the semiconductor layer can be used. LTPS transistors have high field effect mobility and good frequency characteristics.

By applying Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (for example, source driver circuits) can be formed on the same substrate as the display unit. As a result, external circuits mounted on the display device can be simplified, thereby reducing component costs and mounting costs.

OS transistors have very high field effect mobility compared to transistors using amorphous silicon. Additionally, since the OS transistor has a very low leakage current (hereinafter referred to as off current) between the source and drain in the off state, the charge accumulated in the capacitive element connected in series to the transistor can be maintained for a long period of time. Additionally, the power consumption of the display device can be reduced by applying an OS transistor.

Additionally, when increasing the light emission luminance of a light emitting element included in a pixel circuit, it is necessary to increase the amount of current flowing through the light emitting element. Therefore, it is necessary to increase the voltage between the source and drain of the driving transistor included in the pixel circuit. Since the OS transistor has a higher breakdown voltage between the source and drain than the Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using the OS transistor as the driving transistor included in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, thereby increasing the luminance of the light-emitting device.

Additionally, when the transistor operates in the saturation region, the OS transistor can make the change in current between the source and drain smaller with respect to the change in voltage between the gate and source than in the Si transistor. Therefore, by applying an OS transistor as a driving transistor included in the pixel circuit, the current flowing between the source and drain can be set in detail according to the change in voltage between the gate and source, and thus the amount of current flowing through the light emitting device can be controlled. there is. Therefore, the gradation in the pixel circuit can be increased.

Additionally, regarding the saturation characteristics of the current flowing when the transistor operates in the saturation region, the OS transistor can flow a more stable current (saturation current) than the Si transistor even when the voltage between the source and drain gradually increases. Therefore, by using an OS transistor as a driving transistor, for example, a stable current can be supplied to the light emitting element even when there is a deviation in the current-voltage characteristics of the organic EL element. That is, when the OS transistor operates in the saturation region, the current between the source and the drain hardly changes even if the voltage between the source and the drain is increased, so the luminance of the light emitting device can be stabilized.

As described above, by using an OS transistor as a driving transistor included in the pixel circuit, for example, the black display portion can be suppressed from being displayed brightly, the light emission luminance can be increased, the gradation can be increased, or the characteristic deviation of the light emitting element can be reduced. It can be suppressed.

The semiconductor layer is, for example, indium, M (M is gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium) , neodymium, hafnium, tantalum, tungsten, and magnesium) and zinc. In particular, M is preferably one or more types selected from aluminum, gallium, yttrium, and tin.

In particular, it is preferable to use an oxide (also referred to as IGZO) containing indium (In), gallium (Ga), and zinc (Zn) as the semiconductor layer. Alternatively, it is preferable to use oxides containing indium, tin, and zinc. Alternatively, it is preferable to use oxides containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide (also referred to as IAZO) containing indium (In), aluminum (Al), and zinc (Zn). Alternatively, it is preferable to use an oxide (also referred to as IAGZO) containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn).

When the semiconductor layer is In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably greater than or equal to the atomic ratio of M. As the atomic ratio of the metal elements of such In-M-Zn oxide, the composition is In:M:Zn=1:1:1 or thereabouts, the composition is In:M:Zn=1:1:1.2 or thereabouts, Composition at or near In:M:Zn=2:1:3, Composition at or near In:M:Zn=3:1:2, Composition at or near In:M:Zn=4:2:3 , In:M:Zn=4:2:4.1 or its vicinity, In:M:Zn=5:1:3 or its vicinity, In:M:Zn=5:1:6 or its vicinity. Composition, In:M:Zn=5:1:7 or thereabouts, Composition In:M:Zn=5:1:8 or thereabouts, In:M:Zn=6:1:6 or thereabouts A composition of In:M:Zn=5:2:5 or a composition close thereto may be mentioned. Additionally, the composition in the vicinity includes a range of ±30% of the desired atomic ratio.

For example, when the atomic ratio is described as a composition of In:Ga:Zn=4:2:3 or nearby, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 4 or less. This includes cases where the atomic ratio is 2 or more and 4 or less. In addition, when the atomic ratio is described as a composition of In:Ga:Zn=5:1:6 or nearby, when the atomic ratio of In is set to 5, the atomic ratio of Ga is greater than 0.1 and less than 2, and the atomic ratio of Zn is Includes cases where is 5 or more and 7 or less. In addition, when the atomic ratio is described as a composition of In:Ga:Zn=1:1:1 or nearby, when the atomic ratio of In is set to 1, the atomic ratio of Ga is greater than 0.1 and less than 2, and the atomic ratio of Zn is Includes cases where is greater than 0.1 and less than or equal to 2.

The transistor included in the circuit 164 and the transistor included in the pixel portion 107 may have the same structure or different structures. The structures of the plurality of transistors in the circuit 164 may all be the same, or may be of two or more types. Likewise, the structures of the plurality of transistors included in the pixel portion 107 may all be the same, or there may be two or more types.

All of the transistors included in the pixel portion 107 may be OS transistors, all of the transistors included in the pixel portion 107 may be Si transistors, and some of the transistors included in the pixel portion 107 may be used as Si transistors. It may be used as an OS transistor, and the remainder may be used as a Si transistor.

For example, by using both an LTPS transistor and an OS transistor in the pixel portion 107, a display device with low power consumption and high driving ability can be realized. Additionally, a configuration that combines an LTPS transistor and an OS transistor is sometimes called LTPO. Also, for example, it is desirable to use an OS transistor as a transistor that functions as a switch to control conduction or non-conduction of wiring, and to use an LTPS transistor as a transistor to control current.

For example, one of the transistors included in the pixel portion 107 functions as a transistor for controlling the current flowing through the light emitting element and may be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light emitting element. It is preferable to use an LTPS transistor as the driving transistor. As a result, the current flowing to the light emitting element in the pixel circuit can be increased.

On the other hand, another one of the transistors included in the pixel unit 107 functions as a switch to control selection and non-selection of pixels, and may also be called a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the signal line. It is desirable to use an OS transistor as the selection transistor. As a result, the gradation of pixels can be maintained even when the frame frequency is very small (for example, 1 fps or less), so power consumption can be reduced by stopping the driver when displaying a still image.

As described above, the display device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

Additionally, a display device of one embodiment of the present invention includes an OS transistor and also includes a light emitting element with an MML (metal maskless) structure. By using the above configuration, the leakage current that can flow in the transistor and the horizontal leakage current that can flow between adjacent light-emitting devices can be greatly reduced. Additionally, with the above configuration, when an image is displayed on a display device, the viewer can feel one or more of the vividness of the image, the sharpness of the image, high saturation, and high contrast ratio. In addition, by constructing a configuration in which the leakage current that can flow in the transistor and the horizontal leakage current between the light emitting elements are very low, the display can be made with as little light leakage (the so-called phenomenon of the black display area being displayed brightly) that can occur during black display as possible. there is.

In particular, by applying the above-described SBS structure among the light emitting devices of the MML structure, the layers provided between the light emitting devices are divided, so that the horizontal leakage current can be eliminated or the horizontal leakage current can be greatly reduced.

Figures 70 (B1) and (B2) show other configuration examples of transistors.

The transistors 209 and 210 include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a channel formation region 231i, and a pair of low-resistance regions 231n. a semiconductor layer 231, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, and a gate insulating layer. It includes an insulating layer 225 that functions as a gate, a conductive layer 223 that functions as a gate, and an insulating layer 215 that covers the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located between at least the conductive layer 223 and the channel formation region 231i. Additionally, an insulating layer 218 covering the transistor may be provided.

The transistor 209 shown in (B1) of FIG. 70 shows an example in which the insulating layer 225 covers the top and side surfaces of the semiconductor layer 231. The conductive layers 222a and 222b are connected to the low-resistance region 231n through the insulating layer 225 and the openings provided in the insulating layer 215, respectively. One of the conductive layers 222a and 222b functions as a source, and the other functions as a drain.

Meanwhile, in the transistor 210 shown in (B2) of FIG. 70, the insulating layer 225 overlaps the channel formation region 231i of the semiconductor layer 231 and does not overlap the low-resistance region 231n. For example, the structure shown in (B2) of FIG. 70 can be produced by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 70 (B2), the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are formed through the opening of the insulating layer 215. Each is connected to a low-resistance region 231n.

A connection portion 204 is provided in an area of the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 through the conductive layer 166 and the connection layer 242. The conductive layer 166 is a conductive film obtained by processing the same conductive film as the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B, and the conductive layer 111R, the conductive layer 111G, and the conductive layer 111G. An example of a laminate structure of a conductive film obtained by processing the same conductive film as (111B) and a conductive film obtained by processing the same conductive film as the conductive layer (112R), the conductive layer (112G), and the conductive layer (112B) is shown. The conductive layer 166 is exposed on the upper surface of the connection portion 204. As a result, the connection portion 204 and the FPC 172 can be electrically connected through the connection layer 242.

It is desirable to provide a light blocking layer 117 on the surface of the substrate 152 on the substrate 151 side. The light blocking layer 117 can be provided between adjacent light emitting devices, the connection portion 140, and the circuit 164. Additionally, various optical members can be placed outside the substrate 152.

Materials that can be used in the substrate 120 can be applied to the substrate 151 and 152, respectively.

Materials that can be used in the resin layer 122 can be applied to the adhesive layer 142.

As the connection layer 242, an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP) can be used.

Figure 71 shows a modified example of the configuration shown in (A) of Figure 70, where the light-emitting element 130R, light-emitting element 130G, and light-emitting element 130B have the structure shown in Figure 10. Figure 72 shows a modified example of the configuration shown in (A) of Figure 70, where the light-emitting element 130R, light-emitting element 130G, and light-emitting element 130B have the structure shown in Figure 14.

[Display device (100H)]

The display device 100H shown in FIG. 73 (A) is a modified example of the display device 100G shown in FIG. 70 (A), and includes a colored layer 132R, a colored layer 132G, and a colored layer 132B. It is mainly different from the display device 100G in that it includes.

In the display device 100H, the light emitting device 130 has an area that overlaps one of the colored layer 132R, the colored layer 132G, and the colored layer 132B. The colored layer 132R, the colored layer 132G, and the colored layer 132B can be provided on the surface of the substrate 152 on the substrate 151 side. The end of the colored layer 132R, the end of the colored layer 132G, and the end of the colored layer 132B may overlap with the light blocking layer 117. For example, details of the configuration of the light emitting element 130 in the display device 100H may be referred to (A) of FIG. 19 .

In the display device 100H, the light emitting element 130 may emit white light, for example. Also, for example, the colored layer 132R may transmit red light, the colored layer 132G may transmit green light, and the colored layer 132B may transmit blue light. Additionally, the display device 100H may be configured to provide a colored layer 132R, a colored layer 132G, and a colored layer 132B between the protective layer 131 and the adhesive layer 142. In this case, the protective layer 131 is preferably flattened as shown in (A) of FIG. 19.

70(A) and 73(A) show examples where the upper surface of the layer 128 has a flat portion, but the shape of the layer 128 is not particularly limited. Figures 73 (B1) to (B3) show modified examples of the layer 128.

As shown in Figures 73 (B1) and (B3), the upper surface of the layer 128 can be configured to have a shape in which the center and its vicinity are concave when viewed in cross section, that is, a shape having a concave curved surface.

Additionally, as shown in (B2) of FIG. 73, the upper surface of the layer 128 can be configured to have a shape in which the center and its vicinity are convex when viewed in cross section, that is, a shape having a convex curved surface.

Additionally, the top surface of layer 128 may include one or both of a convex curve and a concave curve. Additionally, the number of convex curves and concave curves included in the top surface of the layer 128 is not limited, and may be one or more.

Additionally, the height of the top surface of the layer 128 and the height of the top surface of the conductive layer 224R may be the same, substantially the same, or different. For example, the height of the top surface of the layer 128 may be lower or higher than the height of the top surface of the conductive layer 224R.

Additionally, (B1) in FIG. 73 can be said to be an example in which the layer 128 is placed inside a concave portion formed in the conductive layer 224R. Meanwhile, the layer 128 may be present outside the concave portion formed in the conductive layer 224R as shown in (B3) of FIG. 73 , that is, the upper surface of the layer 128 may be formed to have a wider width than the concave portion.

Figures 74 (A), (B1), (B2), and (B3) are modified examples of the configuration shown in Figures 73 (A), (B1), (B2), and (B3), and include the light emitting element 130R. ), the light-emitting element 130G, and the light-emitting element 130B have the configuration shown in FIG. 10. Figures 75 (A) to (C) show a modified example of the structure shown in Figure 73 (B1) to (B3), in which the EL layer 113R has the structure shown in Figure 14.

This embodiment can be appropriately combined with other embodiments. Additionally, when multiple configuration examples are presented in one embodiment in this specification, the configuration examples can be appropriately combined.

(Embodiment 5)

In this embodiment, a light emitting element that can be used in a display device of one embodiment of the present invention will be described.

As shown in Figure 76 (A), the light emitting element includes an EL layer 763 between a pair of electrodes (lower electrode 761 and upper electrode 762). The EL layer 763 may be composed of a plurality of layers, such as a layer 780, a light emitting layer 771, and a layer 790.

The light-emitting layer 771 has at least a light-emitting material.

When the lower electrode 761 is an anode and the upper electrode 762 is a cathode, the layer 780 is a layer containing a material with high hole injection properties (hole injection layer), a layer containing a material with high hole transport properties ( It includes one or more of a hole transport layer) and a layer containing a material with high electron blocking properties (electron blocking layer). Additionally, the layer 790 includes a layer containing a material with high electron injection properties (electron injection layer), a layer containing a material with high electron transport properties (electron transport layer), and a layer containing a material with high hole blocking properties (hole blocking properties). includes one or more layers). When the lower electrode 761 is a cathode and the upper electrode 762 is an anode, the layers 780 and 790 have the opposite configuration as above.

The configuration including the layer 780, the light-emitting layer 771, and the layer 790 provided between a pair of electrodes can function as one light-emitting unit, so in this specification, the configuration in Figure 76 (A) is referred to as a single structure. It is called.

Additionally, Figure 76 (B) is a modified example of the EL layer 763 included in the light emitting element shown in Figure 76 (A). Specifically, the light emitting element shown in (B) of FIG. 76 includes a layer 781 on the lower electrode 761, a layer 782 on the layer 781, and a light emitting layer 771 on the layer 782. , a layer 791 on the light emitting layer 771, a layer 792 on the layer 791, and an upper electrode 762 on the layer 792.

When the lower electrode 761 is an anode and the upper electrode 762 is a cathode, for example, layer 781 is a hole injection layer, layer 782 is a hole transport layer, layer 791 is an electron transport layer, and layer 792 is a hole injection layer. can be used as an electron injection layer. Additionally, when the lower electrode 761 is a cathode and the upper electrode 762 is an anode, layer 781 is an electron injection layer, layer 782 is an electron transport layer, layer 791 is a hole transport layer, and layer 792 is a hole transport layer. It can be done as an injection layer. By using such a layer structure, carriers can be efficiently injected into the light-emitting layer 771 and the efficiency of carrier recombination within the light-emitting layer 771 can be increased.

Additionally, as shown in Figures 76 (C) and (D), a configuration in which a plurality of light-emitting layers (light-emitting layers 771, 772, and 773) are provided between the layers 780 and 790 is also a variation of the single structure. 76 (C) and (D) show an example including three light-emitting layers, but in a light-emitting device with a single structure, the light-emitting layers may be two layers or four or more layers. Additionally, a light emitting device with a single structure may include a buffer layer between two light emitting layers. The buffer layer can be formed using, for example, a material that can be used for a hole transport layer or an electron transport layer.

In addition, as shown in (E) and (F) of FIG. 76, a plurality of light emitting units (light emitting unit 763a and light emitting unit 763b) are connected in series through the charge generation layer 785 (also referred to as an intermediate layer). This configuration is called a tandem structure in this specification. Additionally, the tandem structure can also be called a stack structure. By using a tandem structure, a light-emitting device capable of emitting high-brightness light can be obtained. Additionally, the tandem structure can increase reliability because it can reduce the current required to obtain the same luminance compared to the single structure.

Additionally, Figures 76 (D) and (F) are examples in which the display device includes a layer 764 that overlaps the light emitting element. Figure 76 (D) is an example in which the layer 764 overlaps the light emitting device shown in Figure 76 (C), and Figure 76 (F) is an example in which the layer 764 overlaps the light emitting device shown in Figure 76 (E). This is an example that overlaps with . In Figures 76 (D) and (F), a conductive film that transmits visible light is used on the upper electrode 762 in order to extract light toward the upper electrode 762.

As the layer 764, one or both of a color conversion layer and a coloring layer can be used.

In Figures 76 (C) and (D), light-emitting materials that emit light of the same color may be used for the light-emitting layer 771, 772, and 773, or the same light-emitting material may be used. For example, a light-emitting material that emits blue light may be used in the light-emitting layer 771, 772, and 773. The blue light emitted by the light emitting element can be extracted from the subpixel that emits blue light. Additionally, in the subpixels representing red light and the subpixels representing green light, a color conversion layer is provided as the layer 764 shown in (D) of Figure 76, thereby converting the blue light emitted by the light emitting element into light of a longer wavelength. It can be converted and red or green light can be extracted. Additionally, it is preferable to use both a color conversion layer and a colored layer as the layer 764. Some of the light emitted from the light-emitting device may pass through the color conversion layer without being converted. As the light passing through the color conversion layer is extracted through the coloring layer, light other than light of the desired color is absorbed by the coloring layer, and the color purity of the light displayed by the subpixel can be increased.

Additionally, light-emitting materials that emit light of different colors may be used for the light-emitting layer 771, 772, and 773, respectively. When the light emitted by the light-emitting layer 771, 772, and 773 are complementary colors, white light emission is obtained. For example, a light emitting device having a single structure preferably includes a light emitting layer containing a light emitting material that emits blue light, and a light emitting layer including a light emitting material that emits visible light with a longer wavelength than blue.

For example, when a single-structure light emitting device includes three layers of light emitting layers, a light emitting layer containing a light emitting material that emits red (R) light, a light emitting layer containing a light emitting material that emits green (G) light, and a light emitting layer containing a light emitting material that emits green (G) light. It is preferable to include a light-emitting layer containing a light-emitting material that emits the light of (B). The stacking order of the light emitting layer can be R, G, B from the anode side, or R, B, G from the anode side, etc. At this time, a buffer layer may be provided between R and G or B.

Also, for example, when a light-emitting device with a single structure includes two layers of light-emitting layers, it includes a light-emitting layer containing a light-emitting material that emits blue (B) light and a light-emitting layer that contains a light-emitting material that emits yellow (Y) light. A configuration that does this is desirable. The above configuration is sometimes called a BY single structure.

A colored layer may be provided as the layer 764 shown in (D) of FIG. 76. By allowing white light to pass through the colored layer, light of the desired color can be obtained.

A light-emitting device that emits white light preferably includes two or more types of light-emitting layers. For example, when white light is obtained using two light-emitting layers, it is sufficient to select a light-emitting layer in which the light-emitting colors of each of the two light-emitting layers are complementary colors. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary, it is possible to obtain a configuration in which the entire light-emitting element emits white light. Additionally, when white light is obtained using three or more light-emitting layers, the light-emitting color of each of the three or more light-emitting layers can be combined to emit white light as a whole.

Additionally, in Figures 76 (E) and (F), light-emitting materials that emit light of the same color may be used for the light-emitting layer 771 and 772, or the same light-emitting material may be used.

For example, in a light-emitting device containing subpixels that emit light of each color, light-emitting materials that emit blue light may be used for the light-emitting layer 771 and 772, respectively. The blue light emitted by the light emitting element can be extracted from the subpixel that emits blue light. Additionally, in the subpixels representing red light and the subpixels representing green light, a color conversion layer is provided as the layer 764 shown in (F) of Figure 76, thereby converting the blue light emitted by the light emitting element into light of a longer wavelength. It can be converted and red or green light can be extracted. Additionally, it is preferable to use both a color conversion layer and a colored layer as the layer 764.

Additionally, when using light-emitting elements with the configuration shown in (E) or (F) of Figure 76 for sub-pixels that emit light of each color, different light-emitting materials may be used depending on the sub-pixels. Specifically, in a light-emitting device including a subpixel that emits red light, a light-emitting material that emits red light may be used for each of the light-emitting layers 771 and 772. Similarly, in a light-emitting device including a subpixel that emits green light, a light-emitting material that emits green light may be used for each of the light-emitting layers 771 and 772. In a light-emitting device that includes a subpixel that emits blue light, a light-emitting material that emits blue light may be used in each of the light-emitting layers 771 and 772. A display device with such a configuration can be said to have a tandem structure light emitting element and an SBS structure. Therefore, it can have both the advantages of the tandem structure and the advantages of the SBS structure. As a result, high-brightness light emission is possible and a highly reliable light-emitting device can be realized.

Additionally, in Figures 76 (E) and (F), light-emitting materials that emit light of different colors may be used for the light-emitting layer 771 and 772. When the light emitted by the light-emitting layer 771 and the light emitted by the light-emitting layer 772 have complementary colors, white light emission is obtained. A colored layer may be provided as the layer 764 shown in (F) of Figure 76. When white light passes through the colored layer, light of the desired color can be obtained.

In addition, an example in which the light-emitting unit 763a includes one light-emitting layer 771 and the light-emitting unit 763b includes one light-emitting layer 772 is shown in (E) and (F) of FIGS. 76, but this is limited to this. It doesn't work. The light emitting units 763a and 763b may each include two or more light emitting layers.

Additionally, although a light-emitting device including two light-emitting units is illustrated in Figures 76 (E) and (F), the light-emitting device is not limited thereto. The light emitting element may include three or more light emitting units.

Specifically, the configuration of the light emitting element shown in Figures 77 (A) to (C) can be mentioned.

Figure 77 (A) shows a configuration including three light emitting units. Additionally, a configuration including two light-emitting units may be called a two-stage tandem structure, and a configuration including three light-emitting units may be called a three-stage tandem structure.

In addition, as shown in (A) of FIG. 77, a plurality of light-emitting units (light-emitting unit 763a, light-emitting unit 763b, and light-emitting unit 763c) are each connected in series through the charge generation layer 785. It is a composition. Additionally, the light emitting unit 763a includes a layer 780a, a light emitting layer 771, and a layer 790a, and the light emitting unit 763b includes a layer 780b, a light emitting layer 772, and a layer 790b. The light emitting unit 763c includes a layer 780c, a light emitting layer 773, and a layer 790c. Additionally, the layer 780c can use a configuration applicable to the layer 780a and 780b, and the layer 790c can use a configuration applicable to the layer 790a and 790b.

In Figure 77 (A), the light-emitting layer 771, 772, and light-emitting layer 773 preferably include a light-emitting material that emits light of the same color. Specifically, the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 each contain a red (R) light-emitting material (the so-called R\R\R three-stage tandem structure), the light-emitting layer 771, the light-emitting layer (772), and the light-emitting layer (773) each contains a green (G) light-emitting material (so-called three-stage tandem structure of G\G\G), or the light-emitting layer (771), the light-emitting layer (772), and the light-emitting layer (773) ) Each can be configured to contain a blue (B) luminescent material (the so-called B\B\B three-stage tandem structure). In addition, 'a\b' means that a light-emitting unit containing a light-emitting material that emits light of b is provided through a charge generation layer on a light-emitting unit containing a light-emitting material that emits light of a, and a and b are provided. It means color.

Additionally, in Figure 77 (A), light-emitting materials that emit light of different colors may be used for some or all of the light-emitting layer 771, 772, and 773. As a combination of the emission colors of the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773, for example, one of the two is blue (B), the other is yellow (Y), and one is red (R). There is a configuration where one is green (G) and the other is blue (B).

Additionally, the light-emitting materials that each emit light of the same color are not limited to the above configuration. For example, as shown in Figure 77 (B), it can be used as a tandem light emitting device in which light emitting units including a plurality of light emitting layers are stacked. Figure 77 (B) shows a configuration in which two light-emitting units (light-emitting unit 763a and light-emitting unit 763b) are connected in series through a charge generation layer 785. Additionally, the light emitting unit 763a includes a layer 780a, a light emitting layer 771a, a light emitting layer 771b, a light emitting layer 771c, and a layer 790a, and the light emitting unit 763b includes a layer 780b and a light emitting layer 772a. ), a light-emitting layer 772b, a light-emitting layer 772c, and a layer 790b.

In Figure 77 (B), a light-emitting material that is complementary to the light-emitting layer 771a, 771b, and 771c is selected, and the light-emitting unit 763a is configured to emit white light (W). . Additionally, light-emitting materials are selected so that the light-emitting layer 772a, light-emitting layer 772b, and light-emitting layer 772c have a complementary color relationship, so that the light-emitting unit 763b is configured to emit white (W) light. That is, the configuration shown in (B) of Figure 77 is a two-stage tandem structure of W\W. Additionally, there is no particular limitation on the stacking order of complementary color emitting materials. The operator can appropriately select the optimal stacking sequence. Also, although not shown, a three-stage tandem structure of W\W\W or a tandem structure of four or more stages may be used.

In addition, when using a light emitting device with a tandem structure, a two-stage tandem structure of B\Y or Y\B including a light emitting unit that emits yellow (Y) light and a light emitting unit that emits blue (B) light, red ( Two-stage tandem structure of R·G\B or B\R·G including a light emitting unit expressing R) and green (G) light and a light emitting unit expressing blue (B) light, blue (B) light A three-stage tandem structure of B\Y\B including a light-emitting unit representing light in this order, a light-emitting unit representing yellow (Y) light, and a light-emitting unit representing blue (B) light, and blue (B) A three-stage tandem structure of B\YG\B including a light-emitting unit representing light, a light-emitting unit representing yellow-green (YG) light, and a light-emitting unit representing blue (B) light in this order, blue (B) A three-stage tandem structure of B\G\B including a light-emitting unit representing light of light, a light-emitting unit representing green (G) light, and a light-emitting unit representing blue (B) light in this order, etc. there is. Additionally, 'a·b' means that one light emitting unit includes a light emitting material that emits light of a and a light emitting material that emits light of b.

Additionally, as shown in Figure 77 (C), a light-emitting unit including one light-emitting layer and a light-emitting unit including a plurality of light-emitting layers may be combined.

Specifically, in the configuration shown in Figure 77 (C), a plurality of light-emitting units (light-emitting unit 763a, light-emitting unit 763b, and light-emitting unit 763c) are connected in series through the charge generation layer 785. It is a composition. Additionally, the light emitting unit 763a includes a layer 780a, a light emitting layer 771, and a layer 790a, and the light emitting unit 763b includes a layer 780b, a light emitting layer 772a, and a light emitting layer 772b. , includes a light-emitting layer 772c and a layer 790b, and the light-emitting unit 763c includes a layer 780c, a light-emitting layer 773, and a layer 790c.

For example, in the configuration shown in Figure 77 (C), the light-emitting unit 763a is a light-emitting unit that emits blue (B) light, and the light-emitting unit 763b is a light-emitting unit that emits red (R), green (G), and yellow-green ( A three-stage tandem structure of B\R·G·YG\B, where the light-emitting unit 763c is a light-emitting unit representing blue (B) light, can be applied.

For example, in the order of the number and color of light emitting units stacked, from the anode side, a two-tier structure of B and Y, a two-tier structure of B and light emitting units X, a three-tier structure of B, Y, and B, B, There is a three-layer structure, and in the order of the number and color of the light emitting layers in the light emitting unit , it can be a three-layer structure of R, G, or a three-layer structure of R, G, R, etc. Additionally, another layer may be provided between the two light emitting layers.

Also, in Figures 76(C) and 76(D), the layers 780 and 790 may be independently formed as a stacked structure composed of two or more layers, as shown in Figure 76(B).

In addition, in Figures 76 (E) and (F), the light emitting unit 763a includes a layer 780a, a light emitting layer 771, and a layer 790a, and the light emitting unit 763b includes a layer 780b and a light emitting layer ( 772), and layer 790b.

When the lower electrode 761 is an anode and the upper electrode 762 is a cathode, each of the layers 780a and 780b includes one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. Additionally, each of the layers 790a and 790b includes one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. When the lower electrode 761 is a cathode and the upper electrode 762 is an anode, the layers 780a and 790a have the opposite configuration as above, and the layers 780b and 790b also have the opposite configuration as above. It is composed.

When the lower electrode 761 is an anode and the upper electrode 762 is a cathode, for example, the layer 780a includes a hole injection layer, a hole transport layer on the hole injection layer, and an electron blocking layer on the hole transport layer. You may include more. Additionally, the layer 790a includes an electron transport layer and may further include a hole blocking layer between the light emitting layer 771 and the electron transport layer. Additionally, the layer 780b includes a hole transport layer and may further include an electron blocking layer on the hole transport layer. Additionally, the layer 790b includes an electron transport layer, an electron injection layer on the electron transport layer, and may also include a hole blocking layer between the light emitting layer 771 and the electron transport layer. When the lower electrode 761 is a cathode and the upper electrode 762 is an anode, for example, the layer 780a includes an electron injection layer, an electron transport layer on the electron injection layer, and a hole blocking layer on the electron transport layer. You may also include more. Additionally, the layer 790a includes a hole transport layer, and may further include an electron blocking layer between the light emitting layer 771 and the hole transport layer. Additionally, the layer 780b includes an electron transport layer and may further include a hole blocking layer on the electron transport layer. Additionally, the layer 790b includes a hole transport layer, a hole injection layer on the hole transport layer, and may also include an electron blocking layer between the light emitting layer 771 and the hole transport layer.

Additionally, when manufacturing a light emitting device with a tandem structure, two light emitting units are stacked with the charge generation layer 785 interposed. The charge generation layer 785 has at least a charge generation region. The charge generation layer 785 has the function of injecting electrons into one of the two light emitting units and holes into the other when a voltage is applied between a pair of electrodes.

Next, materials that can be used in light-emitting devices will be described.

A conductive film that transmits visible light is used for the electrode on the side that extracts light among the lower electrode 761 and the upper electrode 762. Additionally, it is desirable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. Additionally, when a display device has a light-emitting element that emits infrared light, a conductive film that transmits visible light and infrared light is used for the electrode on the side that extracts light, and a conductive film that transmits visible light and infrared light is used in the electrode on the side that does not extract light. It is desirable to use a reflective conductive film.

Additionally, a conductive film that transmits visible light may also be used on the electrode on the side from which light is not extracted. In this case, it is desirable to arrange the electrode between the reflective layer and the EL layer 763. That is, the light emission of the EL layer 763 may be reflected by the reflection layer and extracted from the display device.

As materials forming the pair of electrodes of the light emitting element, metals, alloys, electrically conductive compounds, and mixtures thereof can be appropriately used. Specifically, the materials include aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, Examples include metals such as yttrium and neodymium, and alloys containing these in appropriate combinations. Additionally, the above materials include In-Sn oxide, In-Si-Sn oxide (also referred to as ITSO), In-Zn oxide, and In-W-Zn oxide. Additionally, the above materials include aluminum alloys, alloys of silver and magnesium, and alloys containing silver such as APC. In addition, the above materials include elements belonging to group 1 or 2 of the periodic table of elements not exemplified above (e.g., lithium, cesium, calcium, strontium), rare earth metals such as europium and ytterbium, and alloys containing an appropriate combination of these. , graphene, etc.

It is preferable that a microcavity structure is applied to the light emitting device. Therefore, it is preferable that one of the pair of electrodes of the light-emitting device has an electrode (semi-transmissive and semi-reflective electrode) that is transparent and reflective to visible light, and the other has an electrode (reflective electrode) that is reflective to visible light. It is desirable. When the light-emitting element has a microcavity structure, light emitted from the light-emitting layer can be resonated between both electrodes, thereby strengthening the light emitted from the light-emitting element.

Additionally, the semi-transmissive semi-reflective electrode can have a laminate structure of a conductive layer that can be used as a reflective electrode and a conductive layer that can be used as a transparent electrode.

The visible light reflectance of the semi-transparent semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. Additionally, the resistivity of these electrodes is preferably 1×10 ^-2 Ωcm or less.

A light emitting element has at least a light emitting layer. In addition, the light-emitting device is a layer other than the light-emitting layer, such as a material with high hole injection, a material with high hole transport, a hole blocking material, a material with high electron transport, an electron blocking material, a material with high electron injection, or a bipolar material (electron transport and You may further have a layer containing a material with high hole transport properties) or the like. For example, the light emitting device may include, in addition to the light emitting layer, one or more of a hole injection layer, a hole transport layer, a hole blocking layer, a charge generation layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

The light-emitting device may use either a low-molecular-weight compound or a high-molecular-weight compound, and may also contain an inorganic compound. The layers constituting the light emitting device can be formed by methods such as deposition (including vacuum deposition), transfer, printing, inkjet, or coating.

The light-emitting layer includes one or more types of light-emitting materials. As the luminescent material, a material that emits a luminous color such as blue, purple, bluish-violet, green, yellow-green, yellow, orange, or red is appropriately used. Additionally, as a light-emitting material, a material that emits near-infrared light may be used.

Examples of light-emitting materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, and pyridine derivatives. There are midine derivatives, phenanthrene derivatives, and naphthalene derivatives.

Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, and phenylpyridine derivatives having an electron-withdrawing group. There are organic metal complexes (especially iridium complexes), platinum complexes, and rare earth metal complexes using as a ligand.

The light-emitting layer may have one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting material (guest material). As one or more types of organic compounds, one or both of a substance with high hole transport properties (hole transport material) and a substance with high electron transport properties (electron transport material) can be used. As the hole transport material, a material with high hole transport ability that can be used in the hole transport layer, which will be described later, can be used. As the electron transport material, a material with high electron transport properties that can be used in the electron transport layer described later can be used. Additionally, an anodic material or TADF material may be used as one or more types of organic compounds.

The light-emitting layer preferably contains, for example, a combination of a phosphorescent material, a hole-transporting material that easily forms an exciplex, and an electron-transporting material. With such a configuration, light emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excited complex to the light-emitting material (phosphorescent material), can be efficiently obtained. By selecting a combination that forms an excited complex that emits light that overlaps the wavelength of the absorption band on the lowest energy side of the light-emitting material, energy transfer becomes smooth and light emission can be obtained efficiently. With this configuration, high efficiency, low-voltage operation, and long life of the light emitting device can be achieved at the same time.

The hole injection layer is a layer that injects holes from the anode to the hole transport layer, and is a layer containing a material with high hole injection properties. Materials with high hole injection properties include aromatic amine compounds and composite materials containing a hole-transporting material and an acceptor material (electron-accepting material).

As the hole transport material, a material with high hole transport ability that can be used in the hole transport layer, which will be described later, can be used.

As an acceptor material, for example, an oxide of a metal belonging to groups 4 to 8 of the periodic table of elements can be used. Specifically, molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide are included. Among these, molybdenum oxide is particularly preferable because it is stable in the air, has low hygroscopicity, and is easy to handle. Additionally, organic acceptor materials containing fluorine can also be used. Additionally, organic acceptor materials such as quinodimethane derivatives, chloranyl derivatives, and hexaazatriphenylene derivatives can also be used.

For example, as a material with high hole injection properties, a material containing a hole transport material and an oxide of a metal belonging to groups 4 to 8 of the periodic table of elements described above (typically molybdenum oxide) may be used.

The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer containing a hole transport material. As a hole transport material, a material having a hole mobility of 1×10 ^-6 cm ² /Vs or more is preferable. Additionally, materials other than these can be used as long as they have higher hole transport properties than electrons. As the hole-transporting material, materials with high hole-transporting properties such as π-electron-excessive heteroaromatic compounds (for example, carbazole derivatives, thiophene derivatives, or furan derivatives) or aromatic amines (compounds having an aromatic amine skeleton) are preferred. .

An electron blocking layer is provided in contact with the light emitting layer. The electron blocking layer is a layer containing a material that has hole transport properties and can block electrons. For the electron blocking layer, a material having electron blocking properties among the above hole transporting materials can be used.

Since the electron blocking layer has hole transport properties, it may also be referred to as a hole transport layer. Additionally, a layer having electron blocking properties among the hole transport layers may be referred to as an electron blocking layer.

The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer containing an electron transport material. As the electron transport material, a material having an electron mobility of 1×10 ^-6 cm ² /Vs or more is preferable. Additionally, materials other than these can be used as long as they have a higher transportability of electrons than holes. Electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, or metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, Oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives containing quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, or other nitrogen-containing derivatives. Materials with high electron transport properties, such as π electron-deficient heteroaromatic compounds containing heteroaromatic compounds, can be used.

A hole blocking layer is provided in contact with the light emitting layer. The hole blocking layer is a layer containing a material that has electron transport properties and can block holes. For the hole blocking layer, a material having hole blocking properties among the electron transporting materials may be used.

Since the hole blocking layer has electron transport properties, it can also be called an electron transport layer. Additionally, a layer having hole blocking properties among the electron transport layers may be referred to as a hole blocking layer.

The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection properties. As materials with high electron injection properties, alkali metals, alkaline earth metals, or compounds thereof can be used. As a material with high electron injection properties, a composite material containing an electron transport material and a donor material (electron donating material) may be used.

In addition, it is desirable that the LUMO level of the material with high electron injection property has a small difference (specifically, 0.5 eV or less) from the work function value of the material used for the cathode.

The electron injection layer includes, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF _x , x is an arbitrary number), 8-(quinolinoleto) Lithium (abbreviated name: Liq), 2-(2-pyridyl)phenolate lithium (abbreviated name: LiPP), 2-(2-pyridyl)-3-pyridinolate lithium (abbreviated name: LiPPy), 4-phenyl-2 -(2-pyridyl)phenolate lithium (abbreviated name: LiPPP), lithium oxide ( _LiO Additionally, the electron injection layer may have a laminated structure of two or more layers. As for the above-described laminate structure, for example, there is a structure in which lithium fluoride is used in the first layer and ytterbium is used in the second layer.

The electron injection layer may have an electron transport material. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as an electron transport material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring can be used.

In addition, the lowest unoccupied molecular orbital (LUMO) level of the organic compound having a lone pair of electrons is preferably -3.6 eV or more and -2.3 eV or less. In addition, the HOMO (Highest Occupied Molecular Orbital) level and LUMO level of organic compounds can generally be estimated by CV (cyclic voltammetry), photoelectron spectroscopy, optical absorption spectroscopy, or inverse photoelectron spectroscopy.

For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated name: NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated name: HATNA), or 2,4,6-tris[3'-(pyridine-3- 1) Biphenyl-3-yl]-1,3,5-triazine (abbreviated name: TmPPPyTz) can be used for organic compounds having a lone pair of electrons. In addition, NBPhen has a higher glass transition point (Tg) compared to BPhen, so it has excellent heat resistance.

The charge generation layer has at least a charge generation region as described above. The charge generation region preferably contains an acceptor material, for example, a hole transport material and an acceptor material that can be applied to the hole injection layer described above.

Additionally, it is desirable for the charge generation layer to have a layer containing a material with high electron injection properties. The layer may also be called an electron injection buffer layer. The electron injection buffer layer is preferably provided between the charge generation region and the electron transport layer. Since the injection barrier between the charge generation region and the electron transport layer can be relaxed by providing the electron injection buffer layer, electrons generated in the charge generation region can be easily injected into the electron transport layer.

The electron injection buffer layer preferably contains an alkali metal or an alkaline earth metal, and may, for example, contain an alkali metal compound or an alkaline earth metal compound. Specifically, the electron injection buffer layer preferably contains an inorganic compound containing an alkali metal and oxygen or an inorganic compound containing an alkaline earth metal and oxygen, and has an inorganic compound containing lithium and oxygen (lithium oxide (Li ₂ O), etc.) It is more desirable. In addition to this, materials applicable to the electron injection layer described above can be suitably used for the electron injection buffer layer.

The charge generation layer preferably has a layer containing a material with high electron transport properties. The layer may also be called an electronic relay layer. The electronic relay layer is preferably provided between the charge generation region and the electron injection buffer layer. When the charge generation layer does not have an electron injection buffer layer, an electronic relay layer is preferably provided between the charge generation region and the electron transport layer. The electronic relay layer has the function of smoothly exchanging electrons by suppressing the interaction between the charge generation area and the electron injection buffer layer (or electron transport layer).

As the electronic relay layer, it is preferable to use a phthalocyanine-based material such as copper(II) phthalocyanine (abbreviated name: CuPc) or a metal complex containing a metal-oxygen bond and an aromatic ligand.

Additionally, the above-described charge generation region, electron injection buffer layer, and electron relay layer may not be clearly distinguished depending on cross-sectional shape or characteristics.

Additionally, the charge generation layer may contain a donor material instead of an acceptor material. For example, the charge generation layer may include a layer containing an electron transport material and a donor material that can be applied to the electron injection layer described above.

When stacking light emitting units, an increase in driving voltage can be suppressed by providing a charge generation layer between two light emitting units.

This embodiment can be appropriately combined with other embodiments. Additionally, when multiple configuration examples are presented in one embodiment in this specification, the configuration examples can be appropriately combined.

(Embodiment 6)

In this embodiment, an electronic device of one form of the present invention will be described.

The electronic device of this embodiment has a display unit of one embodiment of the present invention in a display unit. The display device of one embodiment of the present invention is highly reliable and can easily achieve high definition and high resolution. Therefore, it can be used in the display of various electronic devices.

Electronic devices include, for example, electronic devices with relatively large screens such as television devices, desktop or laptop-type personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as digital cameras and digital video cameras. , digital picture frames, mobile phones, portable game consoles, portable information terminals, sound reproduction devices, etc.

In particular, since the display device of one embodiment of the present invention can increase the resolution, it can be suitably used in electronic devices having a relatively small display portion. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), wearable devices that can be mounted on the head, such as VR devices such as head-mounted displays, glasses-type AR devices, and MR devices. there is.

A display device of one form of the present invention is HD (number of pixels: 1280 × 720), FHD (number of pixels: 1920 × 1080), WQHD (number of pixels: 2560 × 1440), WQXGA (number of pixels: 2560 × 1600), 4K (number of pixels: 3840) It is desirable to have very high resolution, such as 8K (7680 × 4320 pixels). In particular, it is desirable to have a resolution of 4K, 8K, or higher. Additionally, the resolution (definition) of the display device of one embodiment of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, and 3000 ppi. More is more preferable, 5000ppi or more is more preferable, and 7000ppi or more is more preferable. By using a display device having one or both of high resolution and high definition, the sense of presence and depth can be further enhanced in electronic devices for personal use such as portable or home use. Additionally, there is no particular limitation on the screen ratio (aspect ratio) of the display device of one embodiment of the present invention. For example, a display device can support various aspect ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

The electronic device of this embodiment includes sensors (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, time, hardness, electric field, current, may have a function of measuring voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

The electronic device of this embodiment may have various functions. For example, a function to display various information (still images, videos, or text images, etc.) on the display, a touch panel function, a function to display a calendar, date, or time, etc., a function to run various software (programs), wireless It may have a communication function, a function to read programs or data stored in a recording medium, etc.

An example of a wearable device that can be mounted on the head will be described using Figures 78 (A) to (D). These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. When an electronic device has the function of displaying at least one of AR, VR, SR, and MR content, the user's sense of immersion can be increased.

The electronic device 700A shown in (A) of FIG. 78 and the electronic device 700B shown in (B) of FIG. 78 each include a pair of display panels 751, a pair of housings 721, and a communication unit ( (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, and a frame 757. , including a pair of nose pads (758).

One type of display device of the present invention can be applied to the display panel 751. Therefore, it can be done with highly reliable electronic devices.

The electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto the display area 756 of the optical member 753. Since the optical member 753 is transparent, the user can view the image displayed in the display area overlapping the transmitted image viewed through the optical member 753. Accordingly, the electronic device 700A and the electronic device 700B are each electronic devices capable of AR display.

The electronic device 700A and the electronic device 700B may be provided with a camera capable of capturing images in the front direction as an imaging unit. Additionally, the electronic device 700A and the electronic device 700B may each have an acceleration sensor such as a gyro sensor to detect the direction of the user's head and display an image corresponding to that direction in the display area 756.

The communication unit includes a wireless communicator, and can supply, for example, a video signal through the wireless communicator. Additionally, instead of or in addition to the wireless communicator, a connector may be provided to connect a cable supplying video signals and power potential.

Additionally, the electronic device 700A and the electronic device 700B are provided with batteries and can be charged either wirelessly or wired.

The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting that the outer surface of the housing 721 is touched. The touch sensor module can detect the user's tap operation or slide operation, and execute various processes. For example, processing such as temporarily stopping or playing a video can be performed by using a tab operation, and processing of fast forwarding or rewinding can be performed by using a slide operation. Additionally, the range of operation can be expanded by providing a touch sensor module in each of the two housings 721.

As a touch sensor module, various touch sensors can be applied. For example, various methods such as capacitance method, resistive film method, infrared method, electromagnetic induction method, surface acoustic wave method, or optical method can be adopted. In particular, it is desirable to apply a capacitive or optical sensor to the touch sensor module.

When using an optical touch sensor, a photoelectric conversion device (also referred to as a photoelectric conversion element) can be used as a light receiving element. One or both of inorganic semiconductors and organic semiconductors can be used in the active layer of the photoelectric conversion device.

The electronic device 800A shown in (C) of FIG. 78 and the electronic device 800B shown in (D) of FIG. 78 each include a pair of display units 820, a housing 821, and a communication unit 822, It includes a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

One type of display device of the present invention can be applied to the display unit 820. Therefore, it can be done with highly reliable electronic devices.

The display unit 820 is provided inside the housing 821 at a position that can be viewed through the lens 832. Additionally, by displaying different images on a pair of display units 820, three-dimensional display using parallax can be performed.

The electronic device 800A and the electronic device 800B can each be said to be VR electronic devices. A user equipped with the electronic device 800A or 800B can view the image displayed on the display unit 820 through the lens 832.

The electronic device 800A and the electronic device 800B preferably have a mechanism that can adjust the left and right positions of the lens 832 and the display unit 820 so that they are in optimal positions according to the position of the user's eyes. Additionally, it is desirable to have a mechanism for adjusting focus by changing the distance between the lens 832 and the display unit 820.

The mounting unit 823 allows the user to mount the electronic device 800A or 800B on the head. Also, for example, in Figure 78 (C), a shape such as a temple (also called a joint or temple, etc.) is illustrated, but the shape is not limited to this. The mounting portion 823 can be mounted by the user, and may be, for example, helmet-shaped or band-shaped.

The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used in the imaging unit 825. Additionally, multiple cameras may be provided to accommodate multiple angles of view, such as telephoto and wide angle.

Additionally, although an example in which the imaging unit 825 is provided is shown here, a range sensor capable of measuring the distance to an object (hereinafter also referred to as a detection unit) may be provided. That is, the imaging unit 825 is a type of detection unit. As a detection unit, for example, an image sensor or a distance image sensor such as LIDAR (Light Detection and Ranging) can be used. By using images obtained by a camera and images obtained by a distance image sensor, more information can be acquired, enabling more precise gesture manipulation.

The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having the vibration mechanism can be applied to one or more of the display unit 820, the housing 821, and the mounting unit 823. As a result, there is no need for separate audio devices such as headphones, earphones, or speakers, and video and audio can be enjoyed simply by installing the electronic device 800A.

The electronic device 800A and the electronic device 800B may each have an input terminal. A cable that supplies, for example, a video signal from a video output device and power to charge a battery provided in the electronic device can be connected to the input terminal.

One form of electronic device of the present invention may have a function of performing wireless communication with the earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (eg, voice data) from an electronic device through a wireless communication function. For example, the electronic device 700A shown in (A) of FIG. 78 has a function of transmitting information to the earphone 750 through a wireless communication function. Additionally, for example, the electronic device 800A shown in (C) of FIG. 78 has a function of transmitting information to the earphone 750 through a wireless communication function.

Additionally, the electronic device may have an earphone unit. The electronic device 700B shown in (B) of FIG. 78 includes an earphone unit 727. For example, the earphone unit 727 and the control unit can be wired to each other. A portion of the wiring connecting the earphone unit 727 and the control unit may be disposed inside the housing 721 or the mounting unit 723.

Similarly, the electronic device 800B shown in (D) of FIG. 78 includes an earphone unit 827. For example, the earphone unit 827 and the control unit 824 can be wired to each other. A portion of the wiring connecting the earphone unit 827 and the control unit 824 may be disposed inside the housing 821 or the mounting unit 823. Additionally, the earphone unit 827 and the mounting unit 823 may have magnets. This is desirable because the earphone unit 827 can be magnetically fixed to the mounting unit 823, making storage easy.

Additionally, the electronic device may have an audio output terminal to which earphones or headphones can be connected. Additionally, the electronic device may have one or both of an audio input terminal and an audio input device. As a voice input device, for example, a collecting device such as a microphone can be used. The function of a so-called headset may be given to the electronic device by having the electronic device have a voice input mechanism.

As described above, both glasses-type (electronic devices 700A and 700B, etc.) and goggle-type (electronic devices 800A and 800B, etc.) are suitable as electronic devices of one form of the present invention.

Additionally, one form of electronic device of the present invention can transmit information to earphones by wire or wirelessly.

The electronic device 6500 shown in (A) of FIG. 79 is a portable information terminal that can be used as a smartphone.

The electronic device 6500 has a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, etc. . The display unit 6502 has a touch panel function.

One type of display device of the present invention can be applied to the display portion 6502. Therefore, it can be done with highly reliable electronic devices.

Figure 79(B) is a cross-sectional schematic diagram including an end portion of the housing 6501 on the microphone 6506 side.

A light-transmitting protection member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, and a touch sensor panel ( 6513), a printed board 6517, and a battery 6518 are disposed.

The display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed to the protection member 6510 by an adhesive layer (not shown).

A portion of the display panel 6511 is folded in an area outside the display portion 6502, and the FPC 6515 is connected to this folded portion. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on the printed board 6517.

A type of flexible display according to the present invention can be applied to the display panel 6511. Therefore, very light electronic devices can be realized. Additionally, because the display panel 6511 is very thin, a large-capacity battery 6518 can be mounted while suppressing the thickness of the electronic device. Additionally, by folding part of the display panel 6511 and placing a connection portion with the FPC 6515 on the back side of the pixel portion, a slim bezel electronic device can be realized.

Figure 79(C) shows an example of a television device. The television device 7100 includes a display unit 7000 in a housing 7101. Here, a configuration in which the housing 7101 is supported by the stand 7103 is shown.

A display device according to the present invention can be applied to the display unit 7000. Therefore, it can be done with highly reliable electronic devices.

The television device 7100 shown in (C) of FIG. 79 can be operated using an operation switch provided in the housing 7101 and a separate remote controller 7111. Alternatively, the display unit 7000 may have a touch sensor, and the television device 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote controller 7111 may have a display unit that displays information output from the remote controller 7111. Channels and volume can be manipulated using the operation keys of the remote controller 7111 or the touch panel, and the image displayed on the display unit 7000 can be manipulated.

Additionally, the television device 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Additionally, by connecting to a communication network via a wired or wireless modem, one-way (from sender to receiver) or two-way (between sender and receiver or between receivers, etc.) information communication can be performed.

Figure 79(D) shows an example of a notebook-type personal computer. The notebook-type personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. A display portion 7000 is provided in the housing 7211.

A display device according to the present invention can be applied to the display unit 7000. Therefore, it can be done with highly reliable electronic devices.

An example of digital signage is shown in Figures 79 (E) and (F).

The digital signage 7300 shown in (E) of FIG. 79 includes a housing 7301, a display unit 7000, and a speaker 7303. It may also have an LED lamp, operation keys (including a power switch or operation switch), connection terminals, various sensors, microphones, etc.

Figure 79 (F) shows a digital signage 7400 mounted on a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

79(E) and 79(F), one type of display device of the present invention can be applied to the display unit 7000. Therefore, it can be done with highly reliable electronic devices.

The wider the display unit 7000, the greater the amount of information that can be provided at once. Additionally, the wider the display unit 7000 is, the easier it is to be noticed by people, and for example, the promotional effect of an advertisement can be increased.

By applying a touch panel to the display unit 7000, it is desirable not only to display images or videos on the display unit 7000, but also to enable users to intuitively operate the display unit 7000. Additionally, when used to provide information such as route information or traffic information, usability can be improved through intuitive operation.

In addition, as shown in (E) and (F) of Figure 79, the digital signage 7300 or digital signage 7400 is wirelessly connected to an information terminal 7311 or an information terminal 7411 such as a smartphone owned by the user. It is desirable to be able to link through communication. For example, advertisement information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Additionally, the display of the display unit 7000 can be switched by operating the information terminal 7311 or the information terminal 7411.

Additionally, a game using the information terminal 7311 or the screen of the information terminal 7411 as an operating means (controller) can be run on the digital signage 7300 or digital signage 7400. This allows an unspecified number of users to participate and enjoy the game at the same time.

The electronic device shown in Figures 80 (A) to (G) includes a housing 9000, a display unit 9001, a speaker 9003, an operation key 9005 (including a power switch or an operation switch), and a connection terminal 9006. ), sensor (9007) (force, displacement, position, speed, acceleration, angular velocity, rotation, distance, light, liquid, magnetism, temperature, chemical, voice, time, longitude, electric field, current, voltage, power, radiation , having a function of measuring flow rate, humidity, gradient, vibration, odor, or infrared rays), a microphone 9008, etc.

The electronic devices shown in Figures 80 (A) to (G) have various functions. For example, a function to display various information (still images, videos, or text images, etc.) on the display, a touch panel function, a function to display a calendar, date, or time, etc., and a function to control processing using various software (programs). It may have a function, a wireless communication function, a function to read and process a program or data stored in a recording medium, etc. Additionally, the functions of electronic devices are not limited to these and may have various functions. The electronic device may have a plurality of display units. Additionally, the electronic device may include, for example, a camera, a function to capture still images or moving images, save them on a recording medium (external or built into the camera), a function to display the captured images on the display, etc. .

Details of the electronic devices shown in Figures 80 (A) to (G) will be described below.

Figure 80(A) is a perspective view showing the portable information terminal 9101. The portable information terminal 9101 can be used as a smartphone, for example. Additionally, the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, or a sensor 9007. Additionally, the portable information terminal 9101 can display text and image information on multiple surfaces. Figure 80 (A) shows an example of displaying three icons 9050. Additionally, information 9051 indicated by a broken rectangle can be displayed on the other side of the display unit 9001. Examples of information 9051 include incoming notification of e-mail, SNS, or telephone, title of e-mail or SNS, sender's name, date, time, remaining battery capacity, and radio wave strength. Alternatively, an icon 9050 or the like may be displayed at the location where the information 9051 is displayed.

Figure 80(B) is a perspective view showing the portable information terminal 9102. The portable information terminal 9102 has a function of displaying information on three or more sides of the display portion 9001. Here, an example is shown where information 9052, information 9053, and information 9054 are displayed on different sides. For example, the user may check the information 9053 displayed at a visible location above the portable information terminal 9102 while storing the portable information terminal 9102 in the chest pocket of clothes. The user can check the display and, for example, determine whether to answer a call or not without taking the portable information terminal 9102 out of his pocket.

Figure 80 (C) is a perspective view showing the tablet terminal 9103. The tablet terminal 9103 can run various applications, such as mobile phone calls, e-mail, text viewing and writing, music playback, Internet communication, and computer games, as examples. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000, and an operation button on the left side of the housing 9000. It has an operation key 9005 and a connection terminal 9006 on the bottom.

Figure 80(D) is a perspective view showing a wristwatch-type portable information terminal 9200. The portable information terminal 9200 can be used as a smartwatch (registered trademark), for example. Additionally, the display unit 9001 is provided with a curved display surface, and can display along the curved display surface. Additionally, the portable information terminal 9200 can make hands-free calls by, for example, communicating with a headset capable of wireless communication. Additionally, the portable information terminal 9200 may mutually transmit and charge data with another information terminal through the connection terminal 9006. Additionally, the charging operation may be performed by wireless power supply.

Figures 80 (E) to (G) are perspective views showing a foldable portable information terminal 9201. In addition, Figure 80(E) shows the portable information terminal 9201 in an unfolded state, Figure 80(G) shows a folded state, and Figure 80(F) shows one of Figure 80(E) and Figure 80(G). It is a perspective view of an intermediate state that changes from one side to the other. The portable information terminal 9201 has excellent portability in the folded state, and has excellent display visibility in the unfolded state due to the seamless and wide display area. The display unit 9001 of the portable information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent to a curvature radius of 0.1 mm or more and 150 mm or less.

This embodiment can be appropriately combined with other embodiments. Additionally, when multiple configuration examples are presented in one embodiment in this specification, the configuration examples can be appropriately combined.

100A: display device, 100B: display device, 100C: display device, 100D: display device, 100E: display device, 100F: display device, 100G: display device, 100H: display device, 100: display device, 101: insulating layer, 102: conductive layer, 103: insulating layer, 104: insulating layer, 105: insulating layer, 106: plug, 107: pixel portion, 108: pixel, 109: conductive layer, 110B: sub-pixel, 110G: sub-pixel, 110R: Subpixel, 110W: Subpixel, 110: Subpixel, 111a: Conductive layer, 111B: Conductive layer, 111b: Conductive layer, 111C: Conductive layer, 111c: Conductive layer, 111f: Conductive film, 111G: Conductive layer, 111R: Conductive layer, 111: Conductive layer, 112a: Conductive layer, 112B: Conductive layer, 112b: Conductive layer, 112C: Conductive layer, 112c: Conductive layer, 112f: Conductive film, 112G: Conductive layer, 112R: Conductive layer, 112: Conductive layer, 113B: EL layer, 113Bf: EL film, 113d: charge generation layer, 113e: light emitting unit, 113f: EL film, 113G: EL layer, 113Gf: EL film, 113R: EL layer, 113Rf: EL film, 113 : EL layer, 114: common layer, 115: common electrode, 117: light-shielding layer, 118B: mask layer, 118Bf: mask film, 118f: mask film, 118G: mask layer, 118Gf: mask film, 118R: mask layer, 118Rf : mask layer, 118: mask layer, 119B: mask layer, 119Bf: mask layer, 119f: mask layer, 119G: mask layer, 119Gf: mask layer, 119R: mask layer, 119Rf: mask layer, 119: mask layer, 120 : substrate, 122: resin layer, 124a: pixel, 124b: pixel, 125f: insulating film, 125: insulating layer, 127a: insulating layer, 127b: insulating layer, 127f: insulating film, 127: insulating layer, 128: layer, 130B: Light-emitting element, 130G: Light-emitting element, 130R: Light-emitting element, 130: Light-emitting element, 131: Protective layer, 132B: Colored layer, 132G: Colored layer, 132R: Colored layer, 132: Colored layer, 140: Connection part, 141: Area , 142: adhesive layer, 151: substrate, 152: substrate, 164: circuit, 165: wiring, 166: conductive layer, 172: FPC, 173: IC, 180: area, 182: area, 184: area, 186: area, 190B: resist mask, 190G: resist mask, 190R: resist mask, 190: resist mask, 201: transistor, 204: connection, 205: transistor, 209: transistor, 210: transistor, 211: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 224B: conductive layer, 224C: conductive layer, 224G: conductive layer, 224R: conductive layer, 225: insulating layer, 231i: channel formation region, 231n: low-resistance region, 231: semiconductor layer, 240: capacitive element, 241: conductive layer, 242: connection layer, 243: insulating layer, 245: conductive Layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255: insulating layer, 256: plug, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 265: insulating layer , 271: plug, 274a: conductive layer, 274b: conductive layer, 274: plug, 280: display module, 281: display unit, 282: circuit unit, 283a: pixel circuit, 283: pixel circuit unit, 284a: pixel, 284: pixel unit. , 285: terminal portion, 286: wiring portion, 290: FPC, 291: substrate, 292: substrate, 301A: substrate, 301B: substrate, 301: substrate, 310A: transistor, 310B: transistor, 310: transistor, 311: conductive layer , 312: low resistance region, 313: insulating layer, 314: insulating layer, 315: device isolation layer, 320A: transistor, 320B: transistor, 320: transistor, 321: semiconductor layer, 323: insulating layer, 324: conductive layer, 325: conductive layer, 326: insulating layer, 327: conductive layer, 328: insulating layer, 329: insulating layer, 331: substrate, 332: insulating layer, 335: insulating layer, 336: insulating layer, 341: conductive layer, 342 : Conductive layer, 343: Plug, 344: Insulating layer, 345: Insulating layer, 346: Insulating layer, 347: Bump, 348: Adhesive layer, 500: Display device, 501: Electrode, 502: Electrode, 512B_1: Light emitting unit, 512B_2 : light-emitting unit, 512B_3: light-emitting unit, 512G_1: light-emitting unit, 512G_2: light-emitting unit, 512G_3: light-emitting unit, 512R_1: light-emitting unit, 512R_2: light-emitting unit, 512R_3: light-emitting unit, 521: layer, 522: layer, 523B: light-emitting layer , 523G: light-emitting layer, 523R: light-emitting layer, 524: layer, 525: layer, 531: charge generation layer, 550B: light-emitting element, 550G: light-emitting element, 550R: light-emitting element, 700A: electronic device, 700B: electronic device, 721: Housing, 723: Mounting portion, 727: Earphone portion, 750: Earphone, 751: Display panel, 753: Optical member, 756: Display area, 757: Frame, 758: Nose pad, 761: Lower electrode, 762: Upper electrode, 763a : light-emitting unit, 763b: light-emitting unit, 763c: light-emitting unit, 763: EL layer, 764: layer, 771a: light-emitting layer, 771b: light-emitting layer, 771c: light-emitting layer, 771: light-emitting layer, 772a: light-emitting layer, 772b: light-emitting layer, 772c: light-emitting layer , 772: light-emitting layer, 773: light-emitting layer, 780a: layer, 780b: layer, 780c: layer, 780: layer, 781: layer, 782: layer, 785: charge generation layer, 790a: layer, 790b: layer, 790c: layer , 790: layer, 791: layer, 792: layer, 800A: electronic device, 800B: electronic device, 820: display unit, 821: housing, 822: communication unit, 823: mounting unit, 824: control unit, 825: imaging unit, 827: Earphone unit, 832: Lens, 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protection member, 6511: display panel, 6512: optical member, 6513: touch sensor panel, 6515: FPC, 6516: IC, 6517: printed board, 6518: battery, 7000: display unit, 7100: television device, 7101: housing, 7103: stand, 7111: remote controller, 7200: laptop-type personal computer, 7211: housing, 7212: keyboard, 7213: pointing device, 7214: external access port, 7300: digital signage, 7301: housing, 7303: speaker, 7311: information terminal, 7400: Digital signage, 7401: Column, 7411: Information terminal, 9000: Housing, 9001: Display unit, 9002: Camera, 9003: Speaker, 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050 : icon, 9051: information, 9052: information, 9053: information, 9054: information, 9055: hinge, 9101: mobile information terminal, 9102: mobile information terminal, 9103: tablet terminal, 9200: mobile information terminal, 9201: mobile information terminal

Claims (20)

As a display device,
A first light-emitting element, a second light-emitting element adjacent to the first light-emitting element, a first insulating layer provided between the first light-emitting element and the second light-emitting element, and a second insulating layer on the first insulating layer. Contains layers,
The first light emitting element includes a first conductive layer, a second conductive layer covering the top and side surfaces of the first conductive layer, a first EL layer on the second conductive layer, and a common EL layer on the first EL layer. Contains an electrode,
The second light emitting element includes a third conductive layer, a fourth conductive layer covering the top and side surfaces of the third conductive layer, a second EL layer on the fourth conductive layer, and the second EL layer on the second EL layer. comprising a common electrode,
The common electrode is provided on the second insulating layer,
The reflectance of the first conductive layer to visible light is higher than the reflectance of the second conductive layer to visible light,
A display device wherein the reflectance of the third conductive layer to visible light is higher than the reflectance of the fourth conductive layer to visible light. According to claim 1,
The first EL layer includes a first functional layer having a region in contact with the second conductive layer, and a first light-emitting layer on the first functional layer,
The display device wherein the second EL layer includes a second functional layer having a region in contact with the fourth conductive layer, and a second light-emitting layer on the second functional layer. According to claim 2,
The first functional layer and the second functional layer include at least one of a hole injection layer and a hole transport layer,
The work function of the second conductive layer is greater than the work function of the first conductive layer,
A display device wherein the work function of the fourth conductive layer is greater than the work function of the third conductive layer. According to claim 3,
The first light emitting element includes a common layer between the first EL layer and the common electrode,
The second light emitting element includes the common layer between the second EL layer and the common electrode,
The common layer is located between the second insulating layer and the common electrode,
The display device wherein the common layer includes at least one of an electron injection layer and an electron transport layer. According to claim 2,
The first functional layer and the second functional layer include at least one of an electron injection layer and an electron transport layer,
The work function of the second conductive layer is smaller than the work function of the first conductive layer,
The display device wherein the work function of the fourth conductive layer is smaller than the work function of the third conductive layer. According to claim 5,
The first light emitting element includes a common layer between the first EL layer and the common electrode,
The second light emitting element includes the common layer between the second EL layer and the common electrode,
The common layer is located between the second insulating layer and the common electrode,
The display device wherein the common layer includes at least one of a hole injection layer and a hole transport layer. The method according to any one of claims 1 to 6,
The second conductive layer and the fourth conductive layer include an oxide containing one or more selected from the group consisting of indium, tin, zinc, gallium, titanium, aluminum, and silicon. The method according to any one of claims 1 to 7,
The first insulating layer has a region in contact with the side surface of the first EL layer and the side surface of the second EL layer, and covers a portion of the upper surface of the first EL layer and a portion of the upper surface of the second EL layer,
When viewed in cross section, the end of the second insulating layer has a tapered shape with a taper angle of less than 90°,
The display device wherein the second insulating layer covers at least a portion of a side surface of the first insulating layer. The method according to any one of claims 1 to 8,
A display device, wherein an end of the first insulating layer has a tapered shape with a taper angle of less than 90° when viewed in cross section. The method according to any one of claims 1 to 9,
The first insulating layer is an inorganic insulating layer,
The display device wherein the second insulating layer is an organic insulating layer. The method according to any one of claims 1 to 10,
The first insulating layer includes aluminum oxide,
The display device wherein the second insulating layer includes an acrylic resin. As a display module,
The display device according to any one of claims 1 to 11,
A display module comprising at least one of a connector and an integrated circuit. As an electronic device,
The display module according to claim 12,
An electronic device comprising at least one of a housing, a battery, a camera, a speaker, and a microphone. A method of manufacturing a display device, comprising:
Forming a first conductive layer,
Forming a second conductive layer that covers the top and side surfaces of the first conductive layer and has a lower reflectance to visible light than the first conductive layer,
Forming an EL film on the second conductive layer,
Forming a mask film on the EL film,
A method of manufacturing a display device, wherein the EL film and the mask film are processed to form an EL layer on the second conductive layer and a mask layer on the EL layer. According to claim 14,
A method of manufacturing a display device, wherein a hydrophobization treatment is performed on the second conductive layer after formation of the second conductive layer and before formation of the EL film. According to claim 15,
A method of manufacturing a display device, wherein the hydrophobization treatment is performed by performing fluorine modification on the second conductive layer. A method of manufacturing a display device, comprising:
Forming a first conductive layer and a second conductive layer,
A third conductive layer that covers the top and side surfaces of the first conductive layer and has a lower reflectance to visible light than the first conductive layer, and a third conductive layer that covers the top and side surfaces of the second conductive layer and has a lower reflectance to visible light than the first conductive layer. Forming a fourth conductive layer having a low reflectivity for visible light,
Forming a first EL film on the third conductive layer and the fourth conductive layer,
Forming a first mask film on the first EL film,
Processing the first EL film and the first mask film to form a first EL layer on the third conductive layer and a first mask layer on the first EL layer, and exposing the fourth conductive layer. order,
Forming a second EL film on the first mask layer and the fourth conductive layer,
Forming a second mask film on the second EL film,
Processing the second EL film and the second mask film to form a second EL layer on the fourth conductive layer and a second mask layer on the second EL layer, and exposing the first mask layer. ,
Forming an insulating film using a photosensitive material on the first mask layer and the second mask layer,
Processing the insulating film to form an insulating layer between the first EL layer and the second EL layer,
Etching is performed using the insulating layer as a mask to expose the top surface of the first EL layer and the top surface of the second EL layer,
A method of manufacturing a display device, wherein a common electrode is formed on the first EL layer, the second EL layer, and the insulating layer. According to claim 17,
A method of manufacturing a display device, wherein hydrophobization treatment is performed on the third conductive layer and the fourth conductive layer after formation of the third conductive layer and the fourth conductive layer and before formation of the first EL film. According to claim 18,
A method of manufacturing a display device, wherein the hydrophobization treatment is performed by performing fluorine modification on the third conductive layer and the fourth conductive layer. The method according to any one of claims 17 to 19,
A method of manufacturing a display device, wherein the etching process is performed by wet etching.

Images