KR20240034081A - Apparatus and method for inspecting semiconductor device - Google Patents

Abstract

The technical idea of the present disclosure is to include a stage configured to place a measurement object; an actuator configured to move the stage in a vertical direction; a detection unit configured to detect a plurality of Raman spectra from scattered light scattered from the measurement object; and a processing unit configured to generate a spectral image for a measured variable using the plurality of Raman spectra detected by the detection unit, wherein the detection unit detects the plurality of Raman spectra at different vertical levels. Provides a semiconductor device inspection device.

Description

Semiconductor device inspection device and inspection method {Apparatus and method for inspecting semiconductor device}

The technical idea of the present disclosure relates to a semiconductor device inspection device and inspection method, and particularly to a semiconductor device inspection device and inspection method using a Raman spectrum.

Raman spectroscopy can analyze the components of various substances by measuring inelastic scattering that occurs within the subject by excitation light irradiated on the subject.

When light is incident on the sample to be measured, inelasticly scattered light of a different wavelength from the incident light is detected and measured. The wavelength shift between incident light and scattered light is called Raman shift, and this shift represents the vibrational or rotational energy state of the component of the object under test. It is known that the intensity of Raman scattered light directly corresponds to the physical properties of the components of the object, so analyzing the object using Raman spectroscopy is very useful.

The technical problem of the present disclosure is to provide a semiconductor device inspection device and inspection method that improves measurement precision and inspection speed.

In order to solve the above-described problem, the technical idea of the present disclosure is to include a stage configured to place a measurement object; an actuator configured to move the stage in a vertical direction; a detection unit configured to detect a plurality of Raman spectra from scattered light scattered from the measurement object; and a processing unit configured to generate a spectral image for a measured variable using the plurality of Raman spectra detected by the detection unit, wherein the detection unit detects the plurality of Raman spectra at different vertical levels. Provides a semiconductor device inspection device.

In order to solve the above-described problem, the technical idea of the present disclosure is to include a stage configured to place a measurement object; an actuator configured to move the stage in a vertical direction; a light source unit configured to generate and output incident light; an objective lens that transmits the incident light and transmits scattered light scattered by the incident light from the measurement object; a spectrometer configured to split the scattered light by wavelength; a detection unit configured to detect a plurality of Raman spectra from the scattered light; a condensing optical system that forms an image of the exit pupil of the objective lens on the detection unit; a first processing device configured to segment the plurality of Raman spectra detected by the detection unit, classify the segmented Raman spectra, and generate a spectral image for a measurement variable using the classified plurality of Raman spectra; and a second processing device configured to combine the spectral images for the measured variable to generate a spectral matrix for the measured variable, wherein the detection unit detects the plurality of Raman spectra at different vertical levels. Provided is a semiconductor device inspection device characterized in that.

In order to solve the above-described problem, the technical idea of the present disclosure includes providing a measurement object; detecting a plurality of Raman spectra from scattered light scattered on the measurement object; Generating a spectral image for a measured variable using the plurality of Raman spectra; and generating a spectral matrix for the measurement variable using the spectral image for the measurement variable, wherein the step of measuring the plurality of Raman spectra includes spectral images scattered from the measurement object at different vertical levels. A semiconductor device inspection method is provided, characterized by using the scattered light.

The semiconductor device inspection device and inspection method according to the present disclosure uses a Raman spectrum to determine the band gap energy, pattern height, material, chemical bonding, vibration, and/or pattern of the semiconductor device. Alternatively, stress can be effectively detected.

1 is a conceptual diagram for explaining a semiconductor device inspection apparatus according to an embodiment of the present disclosure.
Figure 2 is a schematic configuration diagram of a semiconductor device inspection device according to an embodiment of the present disclosure.
FIG. 3 is a perspective view illustrating an object inspected using a semiconductor device inspection apparatus according to an embodiment of the present disclosure.
FIGS. 4A to 4E are graphs showing a method by which a semiconductor device inspection apparatus generates a band gap energy spectral image from a plurality of Raman spectra, according to an embodiment of the present disclosure.
Figure 5 is a conceptual diagram showing a band gap energy spectral image for height according to an embodiment of the present disclosure.
Figure 6 is a conceptual diagram showing a band gap energy spectral matrix according to an embodiment of the present disclosure.
Figure 7 is a conceptual diagram showing a band gap energy spectrum according to height according to an embodiment of the present disclosure.
FIG. 8 is a flowchart showing a method of inspecting a semiconductor device using a semiconductor device inspection device according to an embodiment of the present disclosure.
Figure 9 is a flowchart showing a method for generating a band gap energy spectral image according to an embodiment of the present disclosure.
Figure 10 is a flowchart showing a method for generating a band gap energy spectral image according to an embodiment of the present disclosure.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the attached drawings. The same reference numerals are used for the same components in the drawings, and duplicate descriptions thereof are omitted.

1 is a conceptual diagram illustrating a semiconductor device inspection apparatus according to an embodiment of the present disclosure. Figure 2 is a schematic configuration diagram of a semiconductor device inspection device according to an embodiment of the present disclosure.

1 and 2, the semiconductor device inspection apparatus 1 of this embodiment includes a stage 90, an illumination optical system 110, a condensing optical system 120, a spectrometer 130, and a detector 140. and a processing unit 200. The semiconductor device inspection apparatus 1 can receive the scattered light S reflected from the wafer 80 and acquire a band gap energy spectral image (20 in FIG. 5).

The semiconductor device inspection apparatus 1 according to an embodiment of the present disclosure can inspect the wafer 80 using Raman spectroscopy. First, incident light L is irradiated from the light source 111 to the measurement area 82 on the wafer 80. A manufacturing process may be performed on the wafer 80 to form a plurality of regions, for example, chip regions 84. The measurement area 82 may be one chip area 84 or a plurality of chip areas 84 depending on the range of irradiation of the incident light L. In another embodiment, measurement area 82 may be one or more cell areas.

The incident light (L) irradiated to the wafer 80 is reflected in the measurement area 82 on the wafer 80, and the scattered light (S) scattered in the measurement area 82 may be incident on the detection unit 140. Wafer 80 may include measurement area 82. The wafer 80 may be, for example, a semiconductor substrate. These substrates include silicon, strained silicon (Si), silicon alloy, silicon carbide (SiC), silicon germanium (SiGe), silicon germanium carbide (SiGeC), germanium, germanium alloy, gallium arsenide (GaAs), and indium arsenide ( InAs) and III-V semiconductors, one of II-VI semiconductors, combinations thereof, and stacks thereof.

For example, the semiconductor substrate may include variable resistance elements and/or ovonic threshold switching (OTS) materials. The variable resistance element may include a phase change material that reversibly changes between an amorphous state and a crystalline state depending on the heating time. The variable resistance element may include germanium (Ge), antimony (Sb), indium (In), arsenic (As), aluminum (Al), bismuth (Bi), and/or scandium (Sc). For example, the variable resistance element may include Ge ₂ Sb ₂ Te ₅ . The OTS material may include a chalcogenide switching material. Additionally, the wafer 80 may be an organic plastic substrate rather than a semiconductor substrate, if necessary. Wafer 80 may be positioned on stage 90 .

The stage 90 may support the wafer 80. For example, stage 90 can support a wafer 80 with a diameter of approximately 300 mm. For example, the stage 90 can support a wafer 80 having a diameter of about 150 mm, about 200 mm, about 450 mm, or more. The stage 90 can fix the position of the wafer 80 or move the wafer 80 to a specific position during a semiconductor process. The actuator 92 can move the stage 90. For example, the actuator 92 may move the stage 90 in the horizontal direction (X direction and/or Y direction) and the vertical direction (Z direction). That is, the stage 90 can move the wafer 80 in the horizontal direction (X direction and/or Y direction) and the vertical direction (Z direction). For example, the actuator 92 may move the stage 90 in the vertical direction (Z direction) at intervals of about 10 nm to about 10 μm.

Here, for convenience of description of the semiconductor device inspection apparatus 1 of this embodiment, the XYZ orthogonal coordinate axis system is introduced. The vertical direction (Z direction) is taken as the optical axis (C). It is orthogonal to the vertical direction (Z direction), and the two directions orthogonal to each other are referred to as the horizontal directions (X direction and/or Y direction).

The illumination optical system 110 can illuminate the sample with incident light (L). The sample may be a wafer 80. The illumination optical system 110 may include a light source 111, a first lens unit 112, a beam splitter 114, and an objective lens 115.

The light source 111 may generate incident light (L). The incident light L generated by the light source 111 may include broadband light. The incident light L may be, for example, white light. For example, the light source 111 may generate and emit visible light. At this time, the wavelength range of visible light may be about 400 nm to about 800 nm. However, the present disclosure is not limited to this, and the wavelength band of the light source 111 may vary depending on the measurement object, and may typically have a bandwidth from the UV band to the NIR band. The light source 111 may emit light of a specific wavelength or may emit light of multiple wavelengths simultaneously. However, the incident light (L) generated by the light source 111 is not limited to white light. For example, the incident light L may include monochromatic light having a specific wavelength, or light having a specific wavelength width. Since the sensitivity of the light source 111 to the measurement area 82 on the wafer 80 varies depending on the wavelength of the light source 111, various ranges of wavelengths can be used. However, the present disclosure is not limited to this. The incident light L generated by the light source 111 may be incident on the first lens unit 112.

The first lens unit 112 may include, for example, a convex lens. The first lens unit 112 changes the angle distribution of the incident light L and can irradiate the incident light L to the beam splitter 114. For example, the first lens unit 112 may convert the incident light L emitted from the light source 111 into parallel light. Additionally, the first lens unit 112 may cause the incident light L converted into parallel light to enter the beam splitter 114.

The beam splitter 114 may reflect a part of the incident light L and transmit a part of the incident light L. The beam splitter 114 may reflect a portion of the incident light L toward the objective lens 115. The incident light L reflected from the beam splitter 114 may be incident on the objective lens 115.

The objective lens 115 can illuminate the wafer 80 with incident light (L). The objective lens 115 may illuminate the wafer 80 by concentrating the incident light L reflected from the beam splitter 114 into a point shape. The objective lens 115 may transmit the incident light (L) and also transmit the scattered light (S) in which the incident light (L) is reflected from the measurement surface of the wafer 80. In the semiconductor device inspection apparatus 1 of this embodiment, the optical axis C of the incident light L incident on the wafer 80 and the optical axis C of the scattered light S reflected from the wafer 80 are connected to the wafer 80. ) can be perpendicular to the measurement plane.

The condensing optical system 120 can selectively converge the scattered light S scattered from the wafer 80 . The condensing optical system 120 may include an objective lens 115, a beam splitter 114, and a second lens unit 122. The beam splitter 114 and the objective lens 115 are members of the illumination optical system 110 and the condensing optical system 120. The beam splitter 114 may transmit a portion of the incident scattered light (S). For example, the scattered light S that passes through the beam splitter 114 may be incident on the second lens unit 122. The objective lens 115 may allow the incident light (L) to enter the beam splitter 114 by transmitting the scattered light (S) reflected from the wafer 80.

The second lens unit 122 may condense the scattered light S that has passed through the beam splitter 114 and make it incident on the spectrometer 130. The second lens unit 122 may include, for example, a lower relay lens 122-1 and an upper relay lens 122-2.

The spectrometer 130 may receive scattered light S emitted from the condensing optical system 120. For example, spectrometer 130 may include a prism and/or a diffraction grating. The spectrometer 130 may split the scattered light S that has passed through the second lens unit 122 by wavelength. For example, the spectrometer 130 may refract the scattered light S at different angles depending on the wavelength.

Light incident through the condensing optical system 120 can be converted into light intensity for each wavelength in the spectroscope 130 and collected as data. The light intensity data collected in this way can be converted into interpretable spectral signals.

The detector 140 may be, for example, a CCD camera. Of course, the detection unit 140 is not limited to a CCD camera. The detection unit 140 may detect light intensity data and/or Raman spectrum for each wavelength. The detection unit 140 may detect a Raman spectrum from the incident scattered light (S).

The processing unit 200 may receive a Raman spectrum from the detection unit 140. The processing unit 200 may generate a band gap energy spectral matrix (30 in FIG. 6) using the input Raman spectrum. For example, the processing unit 200 may receive, from the detection unit 140, a first Raman spectrum corresponding to the first height and a second Raman spectrum corresponding to a second height that is different from the first height. The processing unit 200 may generate a band gap energy spectral matrix (30 in FIG. 6) using the first and second Raman spectra.

Specifically, the processing unit 200 may include a first processing device 210 and a second processing device 220. The first processing device 210 may generate a band gap energy spectral image (20 in FIG. 5) by segmenting the Raman spectrum detected by the detection unit 140. The second processing device 220 can generate a band gap energy spectral matrix (30 in FIG. 6) using the band gap energy spectral image (20 in FIG. 5) generated in the first processing device 210. there is. The operating methods of the first processing device 210 and the second processing device 220 will be described later. The band gap energy spectral matrix (30 in FIG. 6) may indicate the size of the band gap energy according to the vertical level, height, and/or depth. The first processing device 210 may be connected to the second processing device 220.

For example, the first processing device 210 may be a data analyzer, and the second processing device 220 may be a mapping system. The first processing device 210 may extract physical parameters of the inspection area of the wafer 80 from Raman spectrum data. For example, the first processing device 210 and/or the second processing device 220 may be a data readout computer.

Measurement variables that the semiconductor device inspection device 1 can measure include band gap energy, pattern height, material, chemical bonding, vibration and/or stress, etc. This can be.

A typical semiconductor device inspection device does not include an actuator that moves the wafer stage in the vertical direction, making it relatively difficult to acquire Raman spectrum data at different heights.

On the other hand, the semiconductor device inspection apparatus 1 of this embodiment may include an actuator 92 that moves the wafer stage 90 in the vertical direction (Z direction). Accordingly, the semiconductor device inspection apparatus 1 can acquire a plurality of Raman spectrum data at different heights. Additionally, the semiconductor device inspection apparatus 1 can generate a band gap energy spectral matrix (30 in FIG. 6) using Raman spectrum data. Accordingly, the semiconductor device inspection apparatus 1 can precisely measure the intensity of the band gap energy of the semiconductor device according to the vertical level.

FIG. 3 is a perspective view illustrating an object inspected using a semiconductor device inspection apparatus according to an embodiment of the present disclosure.

Referring to FIGS. 1 to 3 , the semiconductor device inspection apparatus 1 can inspect the memory device 300. For example, the semiconductor device inspection device 1 may include band gap energy data, pattern height data, physical property data, and chemical bond data for each variable resistance element (PM) and/or switching element (SW) of the memory element 300. , vibration data and/or stress data may be measured.

The memory element 300 may include a word line (WL), a bit line (BL), an electrode element (EL), a variable resistance element (PM), and a switching element (SW). If the variable resistance element (PM) includes a phase-change material whose resistance changes depending on temperature, the memory device 300 may be a phase-change random access memory (PRAM) device.

An electrode element (EL), a variable resistance element (PM), and a switching element (SW) may be interposed between the word line (WL) and the bit line (BL). Additionally, an electrode element EL may be interposed between the variable resistance element PM and the switching element SW.

The electrode element (El) is a conductive material such as W, Ti, Ta, Al, Cu, C, CN, TiN, TiAlN, TiSiN, TiCN, TiCSiN, WN, CoSiN, WSiN, TaN, TaCN, TaSiN, TiO, Or it may be a combination of these.

The variable resistance element (PM) may include a phase change material that reversibly changes between an amorphous state and a crystalline state depending on heating time. For example, the phase of the variable resistance element (PM) can be reversibly changed by Joule heat generated by the voltage applied to both ends of the variable resistance element (PM), and this phase change It may contain a material whose resistance can be changed by . In example embodiments, the variable resistance element (PM) may include a chalcogenide material as a phase change material.

In exemplary embodiments, the variable resistance element (PM) is made of germanium (Ge), antimony (Sb), indium (In), arsenic (As), aluminum (Al), bismuth (Bi), and/or scandium ( It may contain 2 to 5 component substances including Sc).

In other exemplary embodiments, the variable resistance element (PM) includes a material selected from the two-component to five-component materials illustrated above as constituent materials of the variable resistance element (PM), B, C, N, O, P, It may contain at least one additional element selected from Cd, W, Ti, Hf, and Zr.

The switching element (SW) may include a chalcogenide switching material in an amorphous state. The switching element (SW) may include a material layer whose resistance can change depending on the magnitude of the voltage applied to both ends of the switching element (SW). For example, the switching element (SW) may include an ovonic threshold switching (OTS) material. The OTS material may include a chalcogenide switching material.

In example embodiments, the switching element (SW) may include two to six component materials including germanium (Ge), arsenic (As), and/or silicon (Si).

In other exemplary embodiments, the switching element (SW) includes at least one material selected from the two- to six-component materials illustrated above as constituent materials of the switching element (SW), and B, C, N, and O. It may contain at least one additional element selected.

FIGS. 4A to 4E are graphs showing a method by which a semiconductor device inspection apparatus generates a band gap energy spectral image from a plurality of Raman spectra, according to an embodiment of the present disclosure.

In the graphs of FIGS. 4A and 4B, the vertical axis may represent Raman intensity, and the horizontal axis may represent Raman shift. The horizontal and vertical axes are expressed in arbitrary units (a.u.).

Referring to FIGS. 1, 2, and 4A, the first processing device 210 of the semiconductor device inspection apparatus 1 may receive a plurality of Raman spectra detected by the detector 140. Materials having different parameters are disposed in the measurement area 82 of the wafer 80, and the detection unit 140 can detect a plurality of Raman spectra.

Referring to FIG. 4B, the first processing device 210 may segment a plurality of Raman spectra of FIG. 4A. For example, the first processing device 210 may deconvolve and segment the plurality of Raman spectra of FIG. 4A. The first processing device 210 may obtain Raman spectra of different materials by segmenting a plurality of Raman spectra.

Although FIG. 4B exemplarily shows that three different materials are included in the measurement area (82 in FIG. 1), the present disclosure is not limited thereto. For example, even if two, four or more different materials are included in the measurement area 82, the first processing device 210 can of course segment the materials.

In the graph of FIG. 4C, the vertical axis may represent the relative intensity of a plurality of segmented Raman spectra. The vertical axis is expressed in arbitrary units (a.u.).

Referring to FIGS. 2 and 4C , the first processing device 210 may classify the segmented Raman spectrum. For example, the first processing device 210 uses the peak area, peak intensity, full width at half maximum (FWHM), and/or the Raman shift position where the peak is located as variables to process a plurality of segmented The Raman spectrum can be classified.

In the graph of FIG. 4D, the horizontal axis may represent the relative intensity of a plurality of classified Raman spectra, and the vertical axis may represent the intensity of the band gap energy. The horizontal and vertical axes are expressed in arbitrary units (a.u.).

Referring to FIG. 4D, the first processing device 210 may correspond a plurality of classified Raman spectrum data to the intensity of the measured variable. Measured variables may include, for example, band gap energy, pattern height, physical properties, chemical bonding, vibration, and/or stress.

According to an embodiment of the present disclosure, a plurality of classified Raman spectrum data can be matched to the size of the auxiliary parameter and then matched to the intensity of the measurement variable. Auxiliary parameters may include, for example, band gap energy, pattern height, physical properties, chemical bonding, vibration, and/or stress. The auxiliary parameter may be a measured variable that is different from the measured variable.

If the relationship between the measurement variable to be measured and the plurality of classified Raman spectrum data is not known, the intensity of the measurement variable may be measured after measuring the intensity of the auxiliary parameter.

In one embodiment of the present disclosure, when the relationship between the measurement variable to be measured and the plurality of classified Raman spectrum data is known, the first processing device 210 combines the plurality of classified Raman spectrum data with the intensity of the measurement variable. You can respond directly.

In FIG. 4D, a plurality of exemplary classified Raman spectrum data are corresponded to the intensity of the band gap energy. That is, the measured variable here is the band gap energy.

FIG. 4E is a graph showing the intensity of the band gap energy for the wafer, where the horizontal axis represents the radius (R) of the wafer 80 and the vertical axis represents the intensity of the band gap energy. The horizontal and vertical axes are expressed in arbitrary units (a.u.).

Referring to FIGS. 1, 2, and 4E, the first processing device 210 may indicate the intensity of band gap energy according to the position of the wafer 80. The graph in FIG. 4E may be referred to as a band gap energy spectral image 20. As described above, the pattern height, physical properties, chemical bond, vibration, and/or stress spectrum may be generated depending on the position of the wafer 80.

Figure 5 is a conceptual diagram showing a band gap energy spectral image for height according to an embodiment of the present disclosure. Figure 6 is a conceptual diagram showing a band gap energy spectral matrix according to an embodiment of the present disclosure.

Referring to FIGS. 2, 5, and 6, each band gap energy spectral image 20 may be generated at different heights of the measurement object 22. Here, the measurement object 22 may be the wafer 80 of FIG. 1 and/or the memory device 300 of FIG. 3. For example, the measurement target 22 is a volatile memory semiconductor chip such as Dynamic Random Access Memory (DRAM) or Static Random Access Memory (SRAM), or a flash memory semiconductor chip, Magnetoresistive Random Access Memory (MRAM), or Ferroelectric Random Access Memory (FeRAM). It may be a non-volatile memory semiconductor chip such as Access Memory (RRAM) or Resistive Random Access Memory (RRAM). For example, the measurement object 22 may be a logic semiconductor chip. For example, a semiconductor device containing a semiconductor dielectric film may be the measurement target 22. The band gap energy spectral image 20 may be composed of data about spatial coordinates X (spatial X) and spatial coordinates Y (spatial Y). For example, for n different heights, n band gap energy spectral images 20 can be measured.

The band gap energy spectral matrix 30 may be formed in the second processing device 220 using a plurality of band gap energy spectral images 20. However, the present disclosure is not limited to this, and can be directly obtained within the detection unit 140 by measuring the scattered light (S) in the detection unit 140, and the band gap energy spectral matrix 30 output from the detection unit 140 ) may be stored in the first processing device 210 of the processing unit 200.

The band gap energy spectral matrix 30 may be a virtual band gap energy spectral data structure obtained through processes corresponding to Raman spectrum segmentation, classification, and measurement variables in the spatial area. The band gap energy spectral image 20 may be named a spectral domain. The band gap energy spectral matrix 30 may be referred to as a band gap energy spectral cube. As shown in FIG. 6, the band gap energy spectral matrix 30 is composed of spatial coordinates It may be composed of two band gap energy spectral images (20). That is, the band gap energy spectral matrix 30 is data in the form of a spectral cube with spatial coordinates It can be configured. Each coordinate of the band gap energy spectral matrix 30 may be named I(x, y, z).

Figure 7 is a conceptual diagram showing a band gap energy spectrum according to height according to an embodiment of the present disclosure. In Figure 7, the horizontal axis represents the spatial coordinate Z, and the vertical axis represents the intensity of bandgap energy. The horizontal and vertical axes are expressed in arbitrary units (a.u.).

Referring to FIGS. 2, 6, and 7, the second processing device 220 may generate a band gap energy spectrum 40 according to the vertical level using the band gap energy spectral matrix 30. That is, the second processing device 220 can indicate the intensity of the band gap energy according to spatial coordinate Z (spatial Z). Accordingly, the semiconductor device inspection apparatus 1 can measure the intensity of the measurement variable according to the height of the measurement area 82.

FIG. 8 is a flowchart showing a method of inspecting a semiconductor device using a semiconductor device inspection device according to an embodiment of the present disclosure.

Referring to FIGS. 2, 5, 6, 7, and 8, the measurement object 22 is first prepared (S100). For example, the measurement object 22 may be the wafer 80 of FIG. 1 or the memory device 300 of FIG. 3 .

Next, the Raman spectrum of the measurement object 22 is measured (S200). The semiconductor device inspection apparatus 1 can measure a plurality of Raman spectra by irradiating incident light (L) to a measurement sample and then detecting scattered light (S) scattered from the measurement sample.

Next, a band gap energy spectral image 20 can be generated using a plurality of Raman spectra (S300). The first processing device 210 may generate a band gap energy spectral image 20 for each of the different materials.

Next, the second processing device 220 may generate a band gap energy spectral matrix 30 using the band gap energy spectral image 20 (S400). The second processing device 220 may generate a band gap energy spectral matrix 30 by combining the band gap energy spectral images 20 generated at different spatial coordinates Z.

Next, the second processing device 220 may generate a band gap energy spectrum 40 according to the vertical level using the band gap energy spectral matrix 30 (S500). That is, the semiconductor device inspection apparatus 1 can generate a band gap energy spectrum 40 according to height, that is, vertical level.

Figure 9 is a flowchart showing a method for generating a band gap energy spectral image according to an embodiment of the present disclosure.

Referring to FIGS. 2, 7, and 9, the first processing device 210 may segment a plurality of Raman spectra (S320). The first processing device 210 may deconvolve and segment a plurality of Raman spectra.

Next, the first processing device 210 may classify the plurality of segmented Raman spectra (S340). Classifying a plurality of segmented Raman spectra is based on the peak area, intensity of the peak, full width at half maximum (FWHM), and/or Raman shift position where the peak is located, of each of the plurality of segmented Raman spectra. It can mean expressing as a variable.

Subsequently, the first processing device 210 may correspond the classified Raman spectrum to the intensity of the auxiliary parameter (S360). The direct correlation between the classified Raman spectrum and the measured variable may not be known. If the correlation between the classified Raman spectrum and the auxiliary parameter is known, and the correlation between the auxiliary parameter and the measured variable is known, the correlation between the classified Raman spectrum and the measured variable can be indirectly known.

An auxiliary parameter is different from the measured variable. For example, auxiliary parameters may include band gap energy, pattern height, physical properties, chemical bonding, vibration, and/or stress.

Next, the first processing device 210 may correspond the strength of the auxiliary parameter to the strength of the measurement variable (S380). For example, the measured variable may be band gap energy. Accordingly, the first processing device 210 can calculate the intensity of the measured variable using a plurality of Raman spectra.

Figure 10 is a flowchart showing a method for generating a band gap energy spectral image according to an embodiment of the present disclosure. The step of segmenting the plurality of Raman spectra of FIG. 10 (S320) and the step of classifying the plurality of segmented Raman spectra (S340) include the step of segmenting the plurality of Raman spectra of FIG. 9 (S320) and the step of classifying the plurality of segmented Raman spectra. It is substantially the same as the step of classifying (S340), and here, only the step (S360a) of classifying the Raman spectrum corresponding to the measurement variable is described.

Referring to FIGS. 2, 9, and 10, when a direct correlation between the classified Raman spectrum and the measured variable is known, the first processing device 210 may correspond the classified Raman spectrum to the measured variable (S360a ). For example, the measured variable may be band gap energy. Accordingly, the first processing device 210 can calculate the intensity of the measured variable using a plurality of Raman spectra.

So far, the present disclosure has been described with reference to the embodiments shown in the drawings, but these are merely illustrative, and those skilled in the art will understand that various modifications and other equivalent embodiments are possible therefrom. will be. Therefore, the true technical protection scope of the present disclosure should be determined by the technical spirit of the attached patent claims.

1: Semiconductor device inspection device, 20: Band gap energy spectral image, 30: Band gap energy spectral matrix, 40: Band gap energy spectrum, 80: Wafer, 90: Stage, 92: Actuator, 111: Light source, 140: Detection unit, 200: Processing unit

Claims (10)

A stage configured to place a measurement object;
an actuator configured to move the stage in a vertical direction;
a detection unit configured to detect a plurality of Raman spectra from scattered light scattered from the measurement object; and
A processing unit configured to generate a spectral image for a measured variable using the plurality of Raman spectra detected by the detection unit,
A semiconductor device inspection device, wherein the detection unit detects the plurality of Raman spectra at different vertical levels. According to claim 1,
The processing unit,
A device configured to segment the plurality of Raman spectra detected by the detection unit, classify the plurality of segmented Raman spectra, and generate the spectral image for the measured variable using the classified plurality of Raman spectra. 1 processing unit; and
A semiconductor device inspection device comprising: a second processing device configured to generate a spectral matrix for the measured variable by combining the spectral images for the measured variable. According to claim 1,
The measurement variable is a semiconductor device inspection device characterized in that it includes at least one of band gap energy, pattern height, material, chemical bonding, vibration, and stress. . According to claim 1,
A semiconductor device inspection device, wherein the actuator moves the stage in the vertical direction at intervals of 10 nm to 10 μm. A stage configured to place a measurement object;
an actuator configured to move the stage in a vertical direction;
a light source unit configured to generate and output incident light;
an objective lens that transmits the incident light and transmits scattered light scattered by the incident light from the measurement object;
a spectrometer configured to split the scattered light by wavelength;
a detection unit configured to detect a plurality of Raman spectra from the scattered light;
a condensing optical system that forms an image of the exit pupil of the objective lens on the detection unit;
a first processing device configured to segment the plurality of Raman spectra detected by the detection unit, classify the segmented Raman spectra, and generate a spectral image for a measurement variable using the classified plurality of Raman spectra; and
A second processing device configured to combine the spectral images for the measured variable to generate a spectral matrix for the measured variable,
A semiconductor device inspection device, wherein the detection unit detects the plurality of Raman spectra at different vertical levels. According to clause 5,
The first processing device,
Corresponding the plurality of classified Raman spectra to auxiliary parameters, and
A semiconductor device inspection device, characterized in that the corresponding auxiliary parameter corresponds to the measurement variable. providing a measurement object;
detecting a plurality of Raman spectra from scattered light scattered on the measurement object;
Generating a spectral image for a measured variable using the plurality of Raman spectra; and
A step of generating a spectral matrix for the measured variable using a spectral image for the measured variable,
A semiconductor device inspection method, wherein the step of measuring the plurality of Raman spectra uses the scattered light scattered from the measurement object at different vertical levels. According to clause 7,
The step of generating a spectral image for the measured variable is,
segmenting the plurality of Raman spectra; and
A semiconductor device inspection method comprising: classifying the plurality of segmented Raman spectra. According to clause 7,
The step of generating a spectral image for the measured variable from the plurality of classified Raman spectra includes:
Corresponding the plurality of classified Raman spectra to the intensity of an auxiliary parameter; and
Corresponding the intensity of the auxiliary parameter to the intensity of the measurement variable;
A semiconductor device inspection method further comprising: According to clause 7,
A semiconductor device inspection method further comprising: directly corresponding the plurality of classified Raman spectra to the measurement variable.

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