KR20240019730A - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

It is a laminated film in which an organic insulating film is sealed with an inorganic insulating film located on the top and bottom, etc., and when forming a sealing film covering a light emitting element, the peripheral end surface of the organic insulating film is made into an inclined plane at a desired angle.
A substrate processing method for forming a sealing film that covers a light-emitting device on a substrate, wherein the substrate includes a first inorganic insulating film formed to cover the light-emitting device, and a peripheral portion whose peripheral end surface is an inclined surface on the first inorganic insulating film. An organic insulating film having an organic insulating film is formed, a second inorganic insulating film is formed on the organic insulating film, a mask of photoresist exposing the second inorganic insulating film on the periphery is formed on the second inorganic insulating film, and the substrate The processing method includes (A) performing a first etching to remove the second inorganic insulating film through a mask of the photoresist to form a mask of the second inorganic insulating film; (B) thereafter, forming a mask of the second inorganic insulating film; (C) performing a second etching to remove the organic insulating film through a mask; (C) thereafter, selectively forming a third inorganic insulating film on the mask of the second inorganic insulating film, a process of forming a mask of the third inorganic insulating film laminated film, and (D) thereafter removing the organic insulating film through the mask of the laminated film, wherein the selectivity of the organic insulating film to the inorganic insulating film is lower than that of the second etching. It includes a process of performing a third etching.

Description

Substrate processing method and substrate processing apparatus {SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS}

This disclosure relates to a substrate processing method and substrate processing apparatus.

Patent Document 1 discloses a method of manufacturing a display device including a step of forming a sealing layer on a substrate to cover the light-emitting elements and terminals. In this manufacturing method, the step of forming the sealing layer includes a step of forming a first inorganic layer, a step of forming an organic layer on the first inorganic layer, and a portion that covers the organic layer and lies directly on the first inorganic layer. It includes a process of forming a second inorganic layer.

Patent Document 2 discloses a method for manufacturing an organic EL panel. This manufacturing method includes the steps of forming a first inorganic insulating film on a substrate on which a plurality of light-emitting elements are formed on the surface, a flat portion covering all of the plurality of light-emitting elements on the first inorganic insulating film, and connecting a peripheral portion of the flat portion. and a process of forming an organic insulating film having an inclined portion by a wet film forming method. Additionally, this manufacturing method includes a step of forming a second inorganic insulating film on the organic insulating film, and a mask layer covering at least a portion of the second inorganic insulating film on the flat portion and exposing the second inorganic insulating film on the inclined portion. It includes the process of forming. Additionally, this manufacturing method includes a process of etching the second inorganic insulating film and the organic insulating film through the mask layer, a process of removing the mask layer, forming a third inorganic insulating film on the substrate, and forming the first inorganic insulating film and the third inorganic insulating film on the substrate. It further includes a process of sealing the organic insulating film by bonding the inorganic insulating film.

Japanese Patent Publication No. 2017-168411 Japanese Patent Publication No. 2022-72380

The technology related to the present disclosure is a laminated film in which an organic insulating film is sealed with an inorganic insulating film located above and on the back, and when forming a sealing film covering a light emitting element, the peripheral end surface of the organic insulating film is made into an inclined plane at a desired angle.

One aspect of the present disclosure is a substrate processing method for forming a sealing film that covers a light-emitting device on a substrate, wherein the substrate includes a first inorganic insulating film formed to cover the light-emitting device, and on the first inorganic insulating film, a surrounding area. An organic insulating film is formed having a peripheral portion whose end surface is an inclined surface, a second inorganic insulating film is formed on the organic insulating film, and a photoresist exposing the second inorganic insulating film on the peripheral portion is formed on the second inorganic insulating film. A mask is formed, and the substrate processing method includes (A) performing a first etching to remove the second inorganic insulating film through the mask of the photoresist to form a mask of the second inorganic insulating film, (B) ) After that, performing a second etching process to remove the organic insulating film through the mask of the photoresist, (C) After that, selectively forming a third inorganic insulating film on the mask of the second inorganic insulating film, , a step of forming a mask of a laminated film of the second inorganic insulating film and the third inorganic insulating film, (D) thereafter, removing the organic insulating film through the mask of the laminated film, than the second etching of the organic insulating film. and a process of performing a third etching with a low selectivity to the inorganic insulating film.

According to the present disclosure, it is a laminated film in which an organic insulating film is sealed with an inorganic insulating film positioned above and below the organic insulating film, and when forming a sealing film covering a light emitting element, the peripheral end surface of the organic insulating film can be inclined at a desired angle.

1 is a plan view schematically showing the configuration of a substrate processing apparatus according to the present embodiment.
Figure 2 is a longitudinal cross-sectional view schematically showing the configuration of the processing module.
FIG. 3 is a flowchart for explaining an example of substrate processing using the substrate processing apparatus of FIG. 1 .
Figure 4 is a schematic partial cross-sectional view showing the state of the substrate after each step of substrate processing.
Fig. 5 is a schematic partial cross-sectional view showing the state of the substrate when processing different from this example is performed.

In recent years, organic EL (Electro-Luminescence) display devices have been used as display devices for portable devices.

An organic EL display device has a plurality of organic EL elements, and each organic EL element is a stack of an organic EL layer as a light emitting layer, an electrode layer, etc., on a substrate.

Since the organic compound that is the material of the organic EL layer is easily deteriorated by moisture, oxygen, etc., a sealing film that covers a plurality of organic EL elements is provided in each organic EL display device.

Additionally, as a sealing film, a laminate of an inorganic insulating film and an organic insulating film has been proposed. Specifically, a sealing film is proposed that is laminated so as to seal an organic insulating film with an inorganic insulating film located above and below it.

When forming such a sealing film, if an inkjet method or the like is used as a method for forming the organic insulating film, the peripheral end surface of the organic insulating film becomes a gently inclined surface (for example, an inclined surface of 1°). That is, the peripheral portion of the organic insulating film becomes a slanted portion with a low inclination angle. If such a slanted portion is caught in the organic EL layer, the color vision deteriorates, and if the slanted portion is not caught in the organic EL layer, the so-called frame portion becomes wide.

The inclined portion can be removed by etching or the like, but depending on the removal method, the peripheral end surface of the organic insulating film after removal becomes a steeply inclined surface with an inclination angle close to 90°. In such a steep slope, the inorganic insulating film that seals the removed organic insulating film may be damaged due to stress.

Accordingly, in the technology related to the present disclosure, when forming the sealing film of a light emitting element, which is a laminated film in which an organic insulating film is sealed with an inorganic insulating film located above and below the organic insulating film, the side end surface of the organic insulating film is inclined at a desired angle.

Hereinafter, the substrate processing method and substrate processing apparatus according to the present embodiment will be described with reference to the drawings. In addition, in this specification and drawings, elements having substantially the same functional structure are assigned the same number to omit duplicate description.

<Substrate processing device (1)>

1 is a plan view schematically showing the configuration of the substrate processing apparatus 1 according to the present embodiment.

The substrate processing apparatus 1 in FIG. 1 performs processing to form a sealing film that covers the light emitting element on the substrate G.

The substrate processing apparatus 1 includes a carrier station 10 into which a carrier C capable of accommodating a plurality of substrates G is loaded and unloaded, and a processing station provided with a plurality of processing modules 40 that perform a predetermined process on the substrate G under reduced pressure. It has a configuration in which (11) is connected as one piece. The carrier station 10 and the processing station 11 are connected via a load lock module 12.

The load lock module 12 has a load lock chamber 13 configured to switch the room into an atmospheric pressure state and a vacuum state.

The carrier station 10 has a conveyance mechanism 20.

The transfer mechanism 20 transfers the substrate G between the carrier C loaded on the carrier loading table 21 and the load lock module 12 (specifically, the load lock chamber 13) under atmospheric pressure. This transport mechanism 20 has a transport arm 20a that supports the substrate G during transport.

The processing station 11 has a vacuum transfer module 30 and a processing module 40. The number of processing modules 40 provided in the processing station 11 is plural (three in the example in the drawing).

The vacuum transfer module 30 has a vacuum transfer chamber 31 in which the interior is maintained in a reduced pressure state (vacuum state). The vacuum transfer chamber 31 is connected to the load lock chamber 13 of the load lock module 12 through the gate valve G1. Additionally, a gate valve G2 is also provided on the conveyance mechanism 20 side of the load lock chamber 13.

Additionally, the vacuum transfer chamber 31 is connected to each of the vacuum processing chambers 41 described later through a gate valve G3. Inside the vacuum transfer chamber 31, a transfer mechanism 32 is provided to transfer the substrate G. The transfer mechanism 32 transports the substrate G into and out of the processing module 40 (specifically, the vacuum processing chamber 41) and the load lock module 12 (specifically, the load lock chamber 13). The transport mechanism 32 has a transport arm 32a that supports the substrate G during transport.

In this embodiment, each of the processing modules 40 performs etching of a second inorganic insulating film to be described later, etching of an organic insulating film to be described later, formation of a third inorganic insulating film to be described later, formation of a fourth inorganic insulating film to be described later, etc. do it That is, in this embodiment, each of the processing modules 40 functions as the first to third etching units, film forming units, and other film forming units according to the present disclosure.

Each of the processing modules 40 has a vacuum processing chamber 41 in which the above-described etching and film forming are performed on the substrate G in a room under reduced pressure.

Additionally, the substrate processing apparatus 1 includes a control unit 50 .

The control unit 50 includes, for example, a computer equipped with a processor such as a CPU or memory, and has a storage unit (not shown) that stores various types of information. The memory unit stores a program that controls substrate processing using the substrate processing apparatus 1, which will be described later. Additionally, the program may be recorded on a computer-readable storage medium and may be installed into the control unit 50 from the storage medium. Additionally, the storage medium may be temporary or non-transitory.

<Processing module (40)>

FIG. 2 is a longitudinal cross-sectional view schematically showing the configuration of the processing module 40.

The processing module 40 is configured, for example, as a plasma processing device that performs processing using plasma, that is, plasma processing, on the substrate G, and is provided with a container body 100 in the shape of a rectangular cylinder with a bottom, as shown.

The container body 100 is made of a conductive material, for example aluminum, and is electrically grounded. Since corrosive gas is often used in plasma treatment, the inner wall surface of the container body 100 may be subjected to a corrosion-resistant coating treatment such as anodizing treatment for the purpose of improving corrosion resistance. Additionally, an opening is formed in the upper surface of the container body 100. This opening is airtightly closed by a rectangular metal window 120 provided insulated from the container body 100, and specifically, airtightly closed by the metal window 120 and a metal frame 110 to be described later. do. The space surrounded by the container body 100 and the metal window 120 becomes the processing space K1 where the substrate G to be processed is located during plasma processing, and the space above the metal window 120 is a high-frequency antenna to be described later. This becomes antenna room K2 where (plasma antenna) 190 is placed. On the side wall of the container body 100 on the side of the vacuum transfer chamber 31 (see FIG. 1), there is a loading/unloading outlet (not shown) for loading and unloading the substrate G into the processing space K1 and a gate valve G3 (FIG. 1) is provided.

On the lower side of the processing space K1, a loading table 130 is provided to face the metal window 120. The loading table 130 has a pedestal body 131 whose upper surface serves as a substrate loading surface on which the substrate G is loaded, and the pedestal main body 131 is placed on the bottom of the container body 100 through the leg portion 132. It is installed.

The stand body 131 is provided with a base 131a made of a conductive material, for example, aluminum, and an electrostatic chuck 131b that holds the substrate G by electrostatic adsorption.

A high-frequency power source 141 is connected to the base 131a through a matching device 140. The high-frequency power supply 141 supplies high-frequency power for bias, for example, high-frequency power with a frequency of 3.2 MHz, to the base 131a. As a result, ions in the plasma generated in the processing space K1 can be drawn into the substrate G.

An exhaust port 101 is formed on the bottom wall of the container body 100, and an exhaust unit 150 having a vacuum pump or the like is connected to this exhaust port 101. The processing space K1 is depressurized by the exhaust unit 150 .

A metal frame 110, which is a rectangular frame made of a metal material such as aluminum, is provided on the upper surface side of the side wall of the container body 100. A seal member 111 is provided between the container body 100 and the metal frame 110 to keep the processing space K1 airtight. In addition, the container body 100, the metal frame 110, and the metal window 120 are configured to be capable of reducing pressure to form a processing container that accommodates the loading table 130, and also constitute the vacuum processing chamber 41 described above. .

The metal window 120 is, for example, formed in a rectangular shape when viewed in plan. Additionally, the metal window 120 functions as a shower head that supplies processing gas to the processing space K1. For example, the metal window 120 is formed with a plurality of gas discharge holes 121 that discharge the processing gas downward and a diffusion chamber 122 that diffuses the processing gas, and the gas discharge holes 121 and The diffusion chamber 122 is in communication.

Additionally, the metal window 120 is electrically insulated from the metal frame 110 by an insulating member 123.

The etching gas supply units 200 and 201 and the film forming gas supply unit 202 are connected to the diffusion chamber 122 through a supply pipe 210.

The etching gas supply unit 200 supplies etching gas for the inorganic insulating film.

The etching gas supply unit 201 supplies etching gas for the organic insulating film.

The film forming gas supply unit 202 supplies film forming gas for an inorganic insulating film.

The etching gas supply units 200 and 201 and the film forming gas supply unit 202 each have an opening/closing valve (not shown) for switching the start/stop of gas supply, and a flow rate controller (not shown) for adjusting the supplied gas flow rate. ), etc. The etching gas supply units 200 and 201 and the film-forming gas supply unit 202 are configured so that the mixing ratio can be adjusted when supplying a mixed gas in which multiple types of gas are mixed.

Additionally, a purge gas supply unit (not shown) that supplies a purge gas such as an inert gas is also connected to the diffusion chamber 122.

The space surrounded by the above-described metal window 120, the side wall 181, and the ceiling plate 180 constitutes an antenna room K2, and inside the antenna room K2, a high-frequency antenna 190 is installed to face the metal window 120. is placed.

The high-frequency antenna 190 is arranged to be spaced apart from the metal window 120 with a spacer (not shown) formed of, for example, an insulating material therebetween.

A high-frequency power source 143 is connected to the high-frequency antenna 190 through a matching device 142. High-frequency power of, for example, 13.56 MHz is supplied to the high-frequency antenna 190 from the high-frequency power source 143 through the matching device 142. Accordingly, during plasma processing, an induced electric field is formed inside the processing space K1 through the metal window 120, and the processing gas discharged from the gas discharge hole 121 is converted into plasma by the induced electric field.

<Substrate processing>

Next, an example of substrate processing using the substrate processing apparatus 1 will be described. FIG. 3 is a flowchart for explaining an example of substrate processing using the substrate processing apparatus 1. Fig. 4 is a schematic partial cross-sectional view showing the state of the substrate G after each step of substrate processing. Fig. 5 is a schematic partial cross-sectional view showing the state of the substrate G when processing different from this example is performed. In addition, the following substrate processing is performed under the control of the control unit 50.

(Step S1)

First, as shown in FIG. 3, the following substrate G is prepared.

As shown in FIG. 4(A), the substrate G prepared in this step S1 has a first inorganic insulating film NF1 formed to cover the organic EL element E on the substrate surface, and further on the first inorganic insulating film NF1, an organic An insulating film CF is formed. The organic insulating film CF has a peripheral portion CF1 whose peripheral end surface is an inclined surface at the first inclination angle α1. Additionally, in the substrate G prepared in this step S1, a second inorganic insulating film NF2 is formed on the organic insulating film CF, and a photoresist mask (hereinafter referred to as a resist mask) PRM is formed on the second inorganic insulating film NF2. The resist mask PRM is formed to expose the second inorganic insulating film NF2 on the peripheral portion CF1 of the organic insulating film CF.

The substrate G is, for example, a glass plate, but may also be a ceramic plate, a plastic plate, or a metal plate. For example, multiple organic EL display devices can be manufactured from one substrate G. Hereinafter, the area corresponding to one organic EL display device in the substrate G is referred to as the device area.

A plurality of organic EL elements E are provided in each device region of the substrate G. Each organic EL element E, although not shown, is stacked with a lower electrode, an organic EL layer, an upper electrode, etc. Additionally, each organic EL element E may have other layers such as an electron transport layer. The organic EL layer can be made of an organic luminescent material that allows electrons and holes to be injected from an electrode and emits light when the injected charge moves and holes and electrons recombine. The organic light-emitting material may be any known organic material for a light-emitting layer.

The first inorganic insulating film NF1 is formed, for example, of silicon nitride (SiN), silicon oxide (SiO), and silicon oxynitride (SiON) or a combination thereof. Additionally, the first inorganic insulating film NF1 is formed on the entire surface of the substrate G. The thickness of the first inorganic insulating film NF1 is, for example, 1.5 μm or less, and more specifically, 0.5 μm to 1.5 μm.

The organic insulating film CF is formed, for example, by a wet film forming method, specifically, by an inkjet method, and more specifically, by ejecting droplets of material using an inkjet device and curing them. The organic insulating film CF is formed, for example, by any of acrylic and polyurea or a combination thereof.

For example, one layer of the organic insulating film CF is provided for each device region described above, and it integrates and seals a plurality of organic EL elements E in the corresponding device region.

Additionally, the organic insulating film CF is formed to be flat in the area covering all of the plurality of organic EL elements E in the device area. That is, the organic insulating film CF has a flat portion CF2 that covers all of the plurality of organic EL elements E in the device area.

Additionally, since the organic insulating film CF is formed by the inkjet method, it has the above-described peripheral portion CF1 connected to the peripheral edge of the flat portion CF2. The angle of the inclined plane forming the peripheral end surface of the peripheral portion (i.e., inclined portion) CF1, that is, the first inclination angle α1, is, for example, about 1°, and the width of the peripheral portion CF1 in the radial direction (left and right directions in FIG. 4) is, for example, about 400. It is ㎛.

Additionally, the thickness of the organic insulating film CF (its flat portion CF2) is, for example, 8 μm to 10 μm.

For example, the second inorganic insulating film NF2, like the first inorganic insulating film NF1, is formed of any of SiN, SiO, and SiON or a combination thereof. Additionally, the second inorganic insulating film NF2 is formed to cover at least the entire organic insulating film CF. The thickness of the second inorganic insulating film NF2 is, for example, 1.5 μm or less, and more specifically, 0.5 μm to 1.5 μm.

Formation of the resist mask PRM is performed, for example, by forming a photoresist film to cover the second inorganic insulating film NF2, and then exposing and developing the photoresist film. The resist mask PRM covers at least a portion of the second inorganic insulating film NF2 located on the flat portion CF2 of the organic insulating film CF, and exposes the second inorganic insulating film NF2 located on the peripheral portion CF1. Specifically, the resist mask PRM exposes the portion of the second inorganic insulating film NF2 located above the peripheral portion CF1, the portion located outside the peripheral portion CF1, and the portion located above the area near the peripheral portion CF1 in the flat portion CF2. and the portion located above the other areas in the flat portion CF2 is covered.

Additionally, the resist mask PRM is formed to become thinner toward the peripheral edge. The (thickest part of) the resist mask PRM is thinner than (the thickest part of) the organic insulating film CF, for example, the thickness of (the thickest part of) the resist mask PRM is 2 μm to 3 μm. Additionally, it is generally difficult to set the thickness of the resist mask PRM to 8 μm to 10 μm, which is about the same as the thickness of the organic insulating film CF.

In this step S1, specifically, first, the above-described substrate G is taken out from the carrier C by the transfer arm 20a of the transfer mechanism 20, and the gate valve G2 is opened. After that, the substrate G is loaded into the load lock module 12 (specifically, into the load lock chamber 13) by the transfer arm 20a. Subsequently, the gate valve G2 is closed, the inside of the load lock chamber 13 is sealed, and the pressure is reduced. When the pressure in the load lock chamber 13 falls below a predetermined pressure, the gate valve G1 is opened, and the substrate G is transferred from the load lock chamber 13 by the transport arm 32a of the transport mechanism 32. It is taken out and brought into the vacuum transfer chamber 31. Next, the gate valve G1 is brought into the closed state, and then the gate valve G3 for the desired processing module 40 is brought into the open state. Subsequently, the substrate G is loaded into the processing module 40 (specifically, into the vacuum processing chamber 41) by the transfer arm 32a, and placed on the upper surface of the stand main body 131 of the loading table 130. It is loaded. After that, the gate valve G3 is in a closed state. Then, the processing space K1 is exhausted by the exhaust unit 150 until the pressure in the processing space K1 reaches a predetermined level.

(Step S2)

Next, a first etching is performed to remove the second inorganic insulating film NF2 through the resist mask PRM, and as shown in FIG. 4B, a mask NFM2 of the second inorganic insulating film is formed.

Specifically, for example, while exhaustion of the processing space K1 by the exhaust unit 150 is continued, etching gas for the inorganic insulating film as the processing gas is supplied from the etching gas supply unit 200 to the diffusion chamber 122. and is supplied into the processing space K1 through the gas discharge hole 121. Thereafter, when the desired pressure within the processing space K1 is reached, high frequency power is supplied from the high frequency power source 143 to the high frequency antenna 190, thereby generating an induced electric field within the processing space K1 through the metal window 120. Additionally, the etching gas in the processing space K1 is converted into plasma by the induced electric field, and a high-density inductively coupled plasma is generated. Then, ions in the plasma are attracted to the substrate G by the high-frequency power for bias supplied from the high-frequency power source 141 to the stand body 131 of the mounting table 130. As a result, the second inorganic insulating film NF2 is isotropically removed through the resist mask PRM. That is, isotropic etching of the second inorganic insulating film NF2 is performed as the first etching. As a result, the mask NFM2 of the second inorganic insulating film is formed. As described above, in this step S2, since the second inorganic insulating film NF2 is isotropically removed, the peripheral end surface of the mask NFM2 of the second inorganic insulating film formed in this step S2 is shown in Fig. 4(B). As shown, it is located inside the peripheral end surface of the resist mask PRM. In other words, the peripheral end of the resist mask PRM protrudes more than the peripheral end of the mask NFM2 of the second inorganic insulating film.

Additionally, the first etching is performed until the portion of the second inorganic insulating film NF2 exposed from the resist mask PRM disappears.

After the first etching is completed, the supply of power from the high-frequency power sources 141 and 143 and the supply of etching gas from the etching gas supply unit 200 are stopped, and the processing space K1 is purged.

(Step S3)

Subsequently, a second etching is performed to remove the organic insulating film CF through the resist mask PRM.

Specifically, for example, while exhaustion of the processing space K1 by the exhaust unit 150 is continued, etching gas for an organic insulating film as a processing gas is supplied from the etching gas supply unit 201 to the diffusion chamber 122. and is supplied into the processing space K1 through the gas discharge hole 121. Thereafter, when the desired pressure within the processing space K1 is reached, high frequency power is supplied from the high frequency power source 143 to the high frequency antenna 190, thereby generating an induced electric field within the processing space K1 through the metal window 120. Additionally, the etching gas in the processing space K1 is converted into plasma by the induced electric field, and a high-density inductively coupled plasma is generated. Then, ions in the plasma are attracted to the substrate G by the high-frequency power for bias supplied from the high-frequency power source 141 to the stand body 131 of the mounting table 130. As a result, the organic insulating film CF is removed through the resist mask PRM. That is, as the second etching, anisotropic etching of the organic insulating film CF is performed. By this etching, the exposed portions of the organic insulating film CF from both the resist mask PRM and the mask NFM2 of the second inorganic insulating film are removed from the surface layer.

The second etching is the removal of the organic insulating film CF through the resist mask PRM, but since the resist mask PRM is also an organic material, in the second etching, when the organic insulating film CF is removed from the layer on the processing space K1 side, that is, the surface layer, the resist mask PRM is also removed from the surface layer. For example, the resist mask PRM is removed from the surface layer at the same rate as the organic insulating film CF. Therefore, the area exposed from the resist mask PRM in the organic insulating film CF gradually widens. Therefore, as shown in FIG. 4C, the innermost surface of the portion removed from the surface layer in the second etching of the organic insulating film CF becomes an inclined surface at the second inclination angle α2. The second tilt angle α2 is larger than the first tilt angle α1 and is a value depending on the selectivity of the organic insulating film CF to the resist mask PRM.

In addition, since the resist mask PRM is thinner than the organic insulating film CF as described above, at the timing when the resist mask PRM disappears by the second etching, among the portions of the organic insulating film CF that were exposed from the initial resist mask PRM At least some of it remains.

In this embodiment, the second etching is performed until the resist mask PRM disappears, or until a part of the resist mask PRM remains but the organic insulating film CF is removed by a predetermined thickness.

After the second etching is completed, the supply of power from the high-frequency power sources 141 and 143 and the supply of etching gas from the etching gas supply unit 201 are stopped, and the processing space K1 is purged.

In this embodiment, as will be described later, formation of a third inorganic insulating film NF3 is performed following the second etching, but unlike this embodiment, etching is performed following the second etching under the same conditions as the second etching. can be considered a form (hereinafter referred to as a form of comparison). As a comparison, the resist mask PRM disappears in the second etching, and the organic insulating film CF also disappears in the etching under the same conditions. At least, in etching under the same conditions as above after the resist mask PRM disappears, the organic insulating film CF is removed through the mask NFM2 of the second insulating film.

Additionally, the second etching and etching under the same conditions have a high selectivity of the organic insulating film CF to the inorganic insulating film.

Therefore, in the form of comparison, if etching under the same conditions as the second etching is performed until the entire portion exposed from the initial resist mask PRM in the organic insulating film CF is disappeared, as shown in FIG. 5(A) It ends up in the same state as shown. That is, the upper part of the peripheral end surface of the organic insulating film CF after etching becomes a steep slope close to 90°. In this case, after etching under the same conditions as the second etching, the inorganic insulating film NF10 is formed so that the peripheral end surface of the second inorganic insulating film NF2 and the surface of the first inorganic insulating film NF1 are connected, as shown in FIG. 5(B). If the peripheral end surface of the organic insulating film CF is covered with the inorganic insulating film NF10, the inorganic insulating film NF10, etc. may be damaged in the following cases. That is, when stress due to thermal expansion of the second inorganic insulating film NF2 or the like is applied, the inorganic insulating film NF10 (specifically, the portion of the inorganic insulating film NF10 facing the steep slope, etc.) may be damaged.

Accordingly, in this embodiment, the following steps S4 and S5 are performed.

(Step S4)

Following step S3, a third inorganic insulating film NF3 is selectively formed on the mask NFM2 of the second inorganic insulating film, and as shown in FIG. 4(D), a laminated film of the second inorganic insulating film NF2 and the third inorganic insulating film NF3 is formed. A mask LM is formed. The third inorganic insulating film NF3 is formed by, for example, CVD.

Specifically, for example, while exhaustion of the processing space K1 by the exhaust unit 150 is continued, the deposition gas for the inorganic insulating film as the processing gas is supplied from the deposition gas supply unit 202 to the diffusion chamber 122. and is supplied into the processing space K1 through the gas discharge hole 121. Thereafter, when the desired pressure within the processing space K1 is reached, high frequency power is supplied from the high frequency power source 143 to the high frequency antenna 190, thereby generating an induced electric field within the processing space K1 through the metal window 120. Additionally, the film forming gas in the processing space K1 is converted into plasma by the induced electric field, and a high-density inductively coupled plasma is generated. Then, ions in the plasma are attracted to the substrate G by the high-frequency power for bias supplied from the high-frequency power source 141 to the stand body 131 of the mounting table 130. As a result, among the films exposed on the substrate G, the third inorganic insulating film NF3 is selectively formed on the mask NFM2 of the second inorganic insulating film. In addition, the fact that the third inorganic insulating film NF3 is formed on the organic insulating film CF to be thinner than on the mask NFM2 of the second inorganic insulating film corresponds to the fact that the third inorganic insulating film NF3 is selectively formed on the mask NFM2 of the second inorganic insulating film.

For example, the third inorganic insulating film NF3, like the first inorganic insulating film NF1, is formed of any of SiN, SiO, and SiON or a combination thereof. Selective formation of the third inorganic insulating film NF3 on the mask NFM2 of the second inorganic insulating film is realized, for example, by selecting an appropriate film forming gas. For example, silicon tetrachloride, silicon fluoride, monosilane, nitrogen, nitrous oxide, oxygen, etc. can be used as the film forming gas for selectively forming the third inorganic insulating film NF3. Additionally, by using the CVD method, the film quality of the third inorganic insulating film NF3 can be adjusted so that the selectivity of the organic insulating film CF to the inorganic insulating film is lower in the third etching described later than in the second etching.

Selective formation of the third inorganic insulating film NF3 is performed until the third inorganic insulating film NF3 of a desired thickness is formed.

After the selective formation of the third inorganic insulating film NF3 is completed, the supply of power from the high-frequency power sources 141 and 143 and the supply of film forming gas from the film forming gas supply unit 202 are stopped, and the processing space K1 is purged. .

(Step S5)

Next, a third etching is performed. The third etching is an etching that removes the organic insulating film CF through the mask LM of the laminated film, and has a lower selectivity of the organic insulating film CF to the inorganic insulating film than the second etching in step S3.

Specifically, for example, while exhaustion of the processing space K1 by the exhaust unit 150 is continued, etching gas for the inorganic insulating film as the processing gas is supplied from the etching gas supply unit 200 to the diffusion chamber 122. and is supplied into the processing space K1 through the gas discharge hole 121. Thereafter, when the desired pressure within the processing space K1 is reached, high frequency power is supplied from the high frequency power source 143 to the high frequency antenna 190, thereby generating an induced electric field within the processing space K1 through the metal window 120. Additionally, the etching gas in the processing space K1 is converted into plasma by the induced electric field, and a high-density inductively coupled plasma is generated. Then, ions in the plasma are drawn into the substrate G by the high-frequency power for bias supplied from the high-frequency power supply 141 to the stand body 131 of the mounting table 130. As a result, the organic insulating film CF is removed through the mask LM of the stacked film. That is, as the third etching, anisotropic etching of the organic insulating film CF is performed. By this etching, the portions of the organic insulating film CF exposed from both sides of the mask LM of the laminated film are removed from the surface layer. Additionally, in one embodiment, the third inorganic insulating film NF3 is more likely to be removed during the third etching than the second inorganic insulating film NF2.

The third etching is the removal of the organic insulating film CF through the mask LM of the laminated film, but as described above, since the selectivity of the organic insulating film CF to the inorganic insulating film is lower than that in the second etching, the organic insulating film CF is removed in the processing space K1 in the third etching. When being removed from the surface layer on the side, the mask LM of the laminated film is also removed from the surface layer. Therefore, the area of the organic insulating film CF exposed from the mask LM of the laminated film gradually widens. Therefore, as shown in FIG. 4E, the innermost surface of the portion removed from the surface layer in the third etching of the organic insulating film CF becomes an inclined surface at the third inclination angle α3. The third inclination angle α3 is larger than the first inclination angle α1, and is a value depending on the selectivity of the organic insulating film CF with respect to the inorganic insulating film (specifically, the second inorganic insulating film NF2).

The selectivity of the organic insulating film CF to the second inorganic insulating film NF2 in the third etching and the third tilt angle α3, which is a value according to the selectivity, are, for example, any of the following (a) to (c). You can change it by adjusting it.

(a) Pressure in processing space K1 during etching

(b) Output ratio between high-frequency power for plasma generation and high-frequency power for bias.

(c) Mixing ratio when the etching gas consists of a mixed gas

In addition, the mixed gas is, for example, a mixed gas of a fluorine-based gas and an oxygen (O ₂ ) gas, and the fluorine-based gas is, for example, any of carbon fluoride, sulfur fluoride, and nitrogen fluoride, or a combination thereof.

Additionally, the third etching is performed, for example, until the third inorganic insulating film NF3 disappears.

In addition, the thickness of the third inorganic insulating film NF3 is, for example, such that the third inorganic insulating film NF3 is lost at the timing when the entire portion of the organic insulating film CF exposed from the initial resist mask PRM is lost by the third etching. It is of thickness.

Therefore, the state after the third etching, that is, the state when the entire portion of the organic insulating film CF exposed from the initial resist mask PRM is lost by the third etching, is shown in FIG. 4(F). We become together. That is, the peripheral end surface of the organic insulating film CF after the third etching does not have a steep slope close to 90°.

When the thickness of the third inorganic insulating film formed in Step S3 is thinner than the above-described example, Step S3 and Step S4 may be alternately performed and repeated as many times as necessary. That is, steps S3 and S4 may be alternately repeated until the entire portion of the organic insulating film CF exposed from the initial resist mask PRM disappears. Even in this case, the peripheral end surface of the organic insulating film CF after the final third etching does not have a steep slope close to 90°.

In addition, after the third etching is completed, the supply of power from the high-frequency power sources 141 and 143 and the supply of etching gas from the etching gas supply unit 201 are stopped, and the processing space K1 is purged.

Additionally, when the entire portion of the organic insulating film CF exposed from the initial resist mask PRM is lost by the third etching, when the third inorganic insulating film NF3 remains on the substrate G, the third inorganic insulating film NF3 If the light transmittance is lower than that of the fourth inorganic insulating film described later, the third inorganic insulating film NF3 may be removed until it disappears.

(Step S6)

Next, as shown in FIG. 4(G), a fourth inorganic insulating film NF4 is formed on the substrate G, and the organic insulating film CF is sealed by the first inorganic insulating film NF1, the second inorganic insulating film NF2, and the fourth inorganic insulating film NF4. This results in the formation of a sealing film FF. The fourth inorganic insulating film NF4 is formed on the entire surface of the substrate G by, for example, a maskless CVD method without using a mask.

Specifically, for example, while exhaustion of the processing space K1 by the exhaust unit 150 is continued, the deposition gas for the inorganic insulating film as the processing gas is supplied from the deposition gas supply unit 202 to the diffusion chamber 122. and is supplied into the processing space K1 through the gas discharge hole 121. Thereafter, when the desired pressure within the processing space K1 is reached, high frequency power is supplied from the high frequency power source 143 to the high frequency antenna 190, thereby generating an induced electric field within the processing space K1 through the metal window 120. Additionally, the film forming gas in the processing space K1 is converted into plasma by the induced electric field, and a high-density inductively coupled plasma is generated. Then, ions in the plasma are attracted to the substrate G by the high-frequency power for bias supplied from the high-frequency power source 141 to the stand body 131 of the mounting table 130. As a result, the fourth inorganic insulating film NF4 is formed on the entire surface of the substrate G.

For example, the fourth inorganic insulating film NF4, like the first inorganic insulating film NF1, is formed of any of SiN, SiO, and SiON or a combination thereof, and has the same level of light transmittance as the second inorganic insulating film NF2. The entire surface formation of the fourth inorganic insulating film NF4 is realized by, for example, selecting an appropriate film forming gas. For example, monosilane, silicon tetrachloride, and silicon fluoride can be used as a film forming gas for forming the fourth inorganic insulating film NF4 on the entire surface of the substrate G. In addition, for example, by changing the ratio of monosilane in the film forming gas or the type of gas mixed in addition to monosilane, the selective formation of the third inorganic insulating film NF3 and the entire surface formation of the fourth inorganic insulating film NF4 can be switched or formed. The etching resistance of the inorganic insulating film can be adjusted.

The formation of the fourth inorganic insulating film NF4 is performed until the fourth inorganic insulating film NF4 of the desired thickness is formed.

After the formation of the fourth inorganic insulating film NF4 is completed, the supply of power from the high-frequency power sources 141 and 143 and the supply of film-forming gas from the film-forming gas supply unit 202 are stopped, and the processing space K1 is purged.

(Step S7)

After that, the substrate G is taken out.

Specifically, in a procedure opposite to step S1, the substrate G is unloaded from the processing module 40 onto the carrier C on the carrier loading table 21.

This ends the series of substrate processing.

<Main effects of this embodiment>

As described above, according to the present embodiment, when forming the sealing film FF, which is a laminated film in which the organic insulating film CF is sealed with the inorganic insulating films located above and on the back, the peripheral end surface of the organic insulating film CF is made into an inclined surface at a desired inclination angle. You can. Specifically, when forming the sealing film FF, the peripheral end surface of the organic insulating film CF when sealed with the first, second, and fourth inorganic insulating films NF1, NF2, and NF4 is a steep slope close to 90°. You can avoid having it. Therefore, damage to the inorganic insulating film that seals the organic insulating film can be prevented. Specifically, it is possible to prevent damage to the inorganic insulating film when stress due to thermal expansion of the inorganic insulating film is applied to the inorganic insulating film.

Additionally, this is a method of making the peripheral end surface of the organic insulating film CF into an inclined surface with a desired inclination angle, and the following can be considered as a method different from the method according to the present embodiment. That is, after the second etching using the resist mask PRM in step S3, a method of reforming the resist mask PRM and performing the second etching again using the resist mask PRM can be considered. However, in this method, when reforming the resist mask PRM, the exposed organic insulating film CF is exposed to an atmosphere containing moisture, so there is a risk that moisture may penetrate to the EL layer and the EL layer may be damaged. On the other hand, in the present embodiment, since reforming the resist mask PRM is unnecessary, the EL layer is not damaged as described above.

In addition, in this embodiment, the peripheral end surface of the organic insulating film CF in the final sealing film FF can be made into an inclined surface with a desired inclination angle, for example, the inclination angle of the peripheral end surface of the peripheral part of the initial organic insulating film CF, that is, the first inclination angle, is It can be a slope with a slope angle greater than the slope angle α1. Therefore, the so-called frame portion can be narrowed.

Additionally, in Figure 4(F), the inclination angle of the peripheral end surface of the second inorganic insulating film NF2 after the third etching is approximately 90°, but the angle is similar to that of the second inorganic insulating film NF2 during the third etching. It is a value according to the selectivity to the third inorganic insulating film NF3. That is, in this embodiment, by adjusting the selectivity, the peripheral end surface of the second inorganic insulating film NF2 after the third etching can be made to have a desired inclination angle. Accordingly, it is possible to prevent damage to the fourth inorganic insulating film NF4 due to stress being applied to the fourth inorganic insulating film NF4 facing the peripheral end surface of the second inorganic insulating film NF2.

(variation example)

In the above example, the entire process of the first to third etchings and the selective film formation of the third inorganic insulating film NF3 was performed in one processing module 40, but some of them may be performed in one or more processing modules 40. do. For example, each process of the first to third etching and the selective film formation of the third inorganic insulating film NF3 may be performed in separate processing modules 40.

However, the pre-processes of the first to third etchings and the selective film formation of the third inorganic insulating film NF3 are performed in one processing module 40, that is, in one vacuum processing chamber 41, so that the substrate is removed between the processes. There is no need to return G. Therefore, it is possible to suppress a decrease in productivity due to introduction of a new process and the adhesion of foreign substances to the substrate G during transportation.

Additionally, after forming the fourth inorganic insulating film NF4 in step S6, unnecessary portions of the first inorganic insulating film NF1 and the fourth inorganic insulating film NF4 may be removed. Specifically, after the first inorganic insulating film NF1 and the fourth inorganic insulating film NF4 are formed on the entire surface of the substrate G without a mask, the above unnecessary portions may be removed. The unnecessary part is, for example, a part located at the end of the board G or a part located above a terminal used for communication with an external device or power supply.

Instead of this, a method of forming the first inorganic insulating film NF1 and the fourth inorganic insulating film NF4 using a mask may be considered so that the first inorganic insulating film NF1 and the fourth inorganic insulating film NF4 are not formed in unnecessary areas. In the case of this method, there is a portion where the first inorganic insulating film NF1 and the fourth inorganic insulating film NF4 are formed thin due to the influence of the mask, so it is necessary to widen the frame portion in consideration of this portion. In contrast, in the above-described method, since the first inorganic insulating film NF1 and the fourth inorganic insulating film NF4 are formed maskless, there is no need to consider the thinly formed portion. Therefore, the frame portion can be made narrower.

The embodiment disclosed this time should be considered illustrative in all respects and not restrictive. The above-described embodiments may be omitted, replaced, or changed in various forms without departing from the appended claims and the general spirit thereof. For example, the structural requirements of the above embodiments can be arbitrarily combined. From any of the combinations in question, the actions and effects corresponding to the respective constituent elements of the combination are naturally obtained, and other actions and effects that are clear to those skilled in the art can be obtained from the description in this specification.

In addition, the effects described in this specification are illustrative or illustrative only and are not limited. In other words, the technology related to the present disclosure can exert other effects that are apparent to those skilled in the art from the description of this specification in addition to or instead of the above effects.

Additionally, the following configuration examples also fall within the technical scope of the present disclosure.

(1) A substrate processing method for forming a sealing film that covers a light emitting device on a substrate,

In the substrate, a first inorganic insulating film is formed to cover the light emitting element, an organic insulating film having a peripheral edge having an inclined peripheral end surface is formed on the first inorganic insulating film, and a second inorganic insulating film is formed on the organic insulating film. is formed, and a mask of photoresist is formed on the second inorganic insulating film to expose the second inorganic insulating film on the peripheral portion,

The substrate processing method is,

(A) performing a first etching to remove the second inorganic insulating film through a mask of the photoresist to form a mask of the second inorganic insulating film;

(B) thereafter performing a second etching to remove the organic insulating film through the photoresist mask;

(C) thereafter, a step of selectively forming a third inorganic insulating film on the mask of the second inorganic insulating film to form a mask of a laminated film of the second inorganic insulating film and the third inorganic insulating film;

(D) A substrate processing method comprising the step of removing the organic insulating film through the mask of the laminated film and performing a third etching with a lower selectivity of the organic insulating film to the inorganic insulating film than the second etching.

(2) The substrate processing method according to (1) above, wherein the process (C) and the process (D) are alternately repeated.

(3) The substrate processing method of (1) or (2) above, wherein the first etching in the step (A) is isotropic etching.

(4) The substrate processing method according to any one of (1) to (3) above, wherein the photoresist mask is thinner than the organic insulating film.

(5) The substrate processing method according to any one of (1) to (4) above, wherein the first inorganic insulating film and the second inorganic insulating film have a thickness of 1.5 μm or less.

(6) The substrate processing method according to any one of (1) to (5) above, wherein the organic insulating film has a thickness of 10 μm or less.

(7) The substrate processing method according to any one of (1) to (6) above, wherein the step (C) selectively forms the third inorganic insulating film by a CVD method.

(8) forming a fourth inorganic insulating film on the substrate after the step (D), and sealing the organic insulating film with the first inorganic insulating film and the fourth inorganic insulating film, further comprising: (1) ) The substrate processing method according to any one of to (7).

(9) A substrate processing device for forming a sealing film that covers the light emitting element of the substrate,

In the substrate, a first inorganic insulating film is formed to cover the light emitting element, an organic insulating film having a peripheral edge having an inclined peripheral end surface is formed on the first inorganic insulating film, and a second inorganic insulating film is formed on the organic insulating film. is formed, and a mask of photoresist is formed on the second inorganic insulating film to expose the second inorganic insulating film on the peripheral portion,

The substrate processing device is:

a first etching portion that performs a first etching to remove the second inorganic insulating film through a mask of the photoresist to form a mask of the second inorganic insulating film;

a second etching unit that, after the first etching, performs a second etching to remove the organic insulating film through the photoresist mask;

After the second etching, a film forming portion for selectively forming a third inorganic insulating film on the mask of the second inorganic insulating film to form a mask of a laminated film of the second inorganic insulating film and the third inorganic insulating film;

A substrate processing apparatus comprising a third etching unit that removes the organic insulating film through the mask of the laminated film and performs a third etching with a lower selectivity of the organic insulating film to the inorganic insulating film than the second etching.

(10) The substrate processing apparatus according to (9), further comprising a control unit that controls the first etching and the second etching to be performed alternately and repeatedly.

(11) The substrate processing apparatus according to (9) or (10), wherein the first etching is isotropic etching.

(12) The substrate processing apparatus according to any one of (9) to (11) above, wherein the photoresist mask is thinner than the organic insulating film.

(13) The substrate processing apparatus according to any one of (9) to (12) above, wherein the first inorganic insulating film and the second inorganic insulating film have a thickness of 1.5 μm or less.

(14) The substrate processing apparatus according to any one of (9) to (13) above, wherein the organic insulating film has a thickness of 10 μm or less.

(15) The substrate processing apparatus according to any one of (9) to (14) above, wherein the film forming unit selectively forms the third inorganic insulating film by a CVD method.

(16) Further comprising another film forming portion that forms a fourth inorganic insulating film on the substrate after the third etching and seals the organic insulating film with the first inorganic insulating film and the fourth inorganic insulating film, as in (9). ) The substrate processing apparatus according to any one of to (15).

Claims (16)

A substrate processing method for forming a sealing film that covers a light emitting device on a substrate,
In the substrate, a first inorganic insulating film is formed to cover the light emitting element, an organic insulating film having a peripheral edge having an inclined peripheral end surface is formed on the first inorganic insulating film, and a second inorganic insulating film is formed on the organic insulating film. is formed, and a mask of photoresist is formed on the second inorganic insulating film to expose the second inorganic insulating film on the peripheral portion,
The substrate processing method is,
(A) performing a first etching to remove the second inorganic insulating film through a mask of the photoresist to form a mask of the second inorganic insulating film;
(B) thereafter performing a second etching to remove the organic insulating film through the photoresist mask;
(C) thereafter, a step of selectively forming a third inorganic insulating film on the mask of the second inorganic insulating film to form a mask of a laminated film of the second inorganic insulating film and the third inorganic insulating film;
(D) A substrate processing method comprising the step of removing the organic insulating film through the mask of the laminated film and performing a third etching with a lower selectivity of the organic insulating film to the inorganic insulating film than the second etching. According to paragraph 1,
A substrate processing method in which the step (C) and the step (D) are alternately repeated. According to claim 1 or 2,
A substrate processing method, wherein the first etching in the process (A) is isotropic etching. According to claim 1 or 2,
A substrate processing method, wherein the photoresist mask is thinner than the organic insulating film. According to claim 1 or 2,
A substrate processing method, wherein the first inorganic insulating film and the second inorganic insulating film have a thickness of 1.5 μm or less. According to claim 1 or 2,
A substrate processing method wherein the organic insulating film has a thickness of 10 μm or less. According to claim 1 or 2,
The step (C) is a substrate processing method in which the third inorganic insulating film is selectively formed by a CVD method. According to claim 1 or 2,
A substrate processing method further comprising forming a fourth inorganic insulating film on the substrate after the step (D), and sealing the organic insulating film with the first inorganic insulating film and the fourth inorganic insulating film. It is a substrate processing device for forming a sealing film that covers the light emitting element of the substrate,
In the substrate, a first inorganic insulating film is formed to cover the light emitting element, an organic insulating film having a peripheral edge having an inclined peripheral end surface is formed on the first inorganic insulating film, and a second inorganic insulating film is formed on the organic insulating film. is formed, and a mask of photoresist is formed on the second inorganic insulating film to expose the second inorganic insulating film on the peripheral portion,
The substrate processing device is:
a first etching portion that performs a first etching to remove the second inorganic insulating film through a mask of the photoresist to form a mask of the second inorganic insulating film;
a second etching unit that, after the first etching, performs a second etching to remove the organic insulating film through the photoresist mask;
After the second etching, a film forming portion for selectively forming a third inorganic insulating film on the mask of the second inorganic insulating film to form a mask of a stacked film of the second inorganic insulating film and the third inorganic insulating film; A substrate processing apparatus comprising a third etching unit that removes the organic insulating film through a mask and performs a third etching with a lower selectivity of the organic insulating film to the inorganic insulating film than the second etching. According to clause 9,
The substrate processing apparatus further includes a control unit that controls the first etching and the second etching to be performed alternately and repeatedly. According to claim 9 or 10,
The first etching is an isotropic etching. According to claim 9 or 10,
A substrate processing device wherein the photoresist mask is thinner than the organic insulating film. According to claim 9 or 10,
A substrate processing apparatus, wherein the first inorganic insulating film and the second inorganic insulating film have a thickness of 1.5 μm or less. According to claim 9 or 10,
A substrate processing device wherein the organic insulating film has a thickness of 10 μm or less. According to claim 9 or 10,
A substrate processing apparatus wherein the film forming unit selectively forms the third inorganic insulating film by a CVD method. According to claim 9 or 10,
The substrate processing apparatus further includes another film forming unit that forms a fourth inorganic insulating film on the substrate after the third etching and seals the organic insulating film with the first inorganic insulating film and the fourth inorganic insulating film.

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