KR20240018319A - Substrate supporting unit and Substrate processing apparatus having the same - Google Patents

Abstract

The present invention relates to a substrate support unit and a substrate processing device equipped with the same. More specifically, the present invention relates to a substrate support unit that can resolve plasma unevenness in the center and edge of the substrate when processing a substrate using plasma. This relates to a unit and a substrate processing device equipped with the same.

Description

Substrate supporting unit and substrate processing apparatus having the same}

The present invention relates to a substrate support unit and a substrate processing device equipped with the same. More specifically, the present invention relates to a substrate support unit that can resolve plasma unevenness in the center and edge of the substrate when processing a substrate using plasma. This relates to a unit and a substrate processing device equipped with the same.

Generally, a substrate processing device accommodates a substrate inside a chamber and performs various processing processes such as deposition, etching, and cleaning on the substrate.

In this case, plasma can be used to increase the efficiency of the substrate processing process. When using plasma, the efficiency of various processing processes for the substrate can be increased, but in this case, the uniformity of the plasma for the substrate is important.

Generally, when a plasma treatment process is performed on a substrate using plasma, the uniformity of the plasma decreases from the center to the edge of the substrate. This non-uniformity of plasma acts as a factor that causes the processing process to be performed unevenly depending on the center and edge areas of the substrate.

In order to solve the above problems, the present invention provides a substrate support unit that can resolve plasma unevenness in the center and edge of the substrate when processing a substrate using plasma, and a substrate processing device equipped with the same. The purpose is to provide

The object of the present invention as described above is a heater block that supports a substrate, an inner RF electrode disposed on the heater block, chucking the substrate, and an edge of the inner RF electrode, and an impedance independent of the inner RF electrode. It has an adjustable outer RF electrode, and the outer RF electrode is disposed at the edge of the inner RF electrode and has an edge portion with an opening, and at least two connection portions that connect the edge portions across the opening. , The connection portion is achieved by a substrate support unit characterized in that it has a central connection portion passing through the center of the opening, and a plurality of branch connection portions each branched from both ends of the central connection portion and connected to the edge portion.

Additionally, the plurality of branch connection parts may be symmetrically connected to and branch from the central connection part.

Furthermore, the plurality of branch connection parts may be configured as a pair, each branching from both ends of the central connection part.

Meanwhile, the inner RF electrode is composed of a bipole electrode, and can be divided into multiples of 2 and placed at predetermined intervals.

Furthermore, at least one of the central connectors may be disposed along the divided intervals of the inner RF electrode.

Meanwhile, the edge portion of the outer electrode may be composed of a plurality of divided edge portions arranged to be spaced apart from each other.

In this case, the plurality of branch connection parts may be respectively connected to the divided edges.

Additionally, at least two of the plurality of branch connection parts may be connected to the same split edge part.

Furthermore, the inner RF electrode may be composed of a monopole electrode.

Meanwhile, the edge portion of the outer electrode may be composed of a plurality of divided edge portions arranged to be spaced apart from each other.

In this case, the plurality of branch connection parts may be respectively connected to the divided edges.

Additionally, at least two of the plurality of branch connection parts may be connected to the same split edge part.

Meanwhile, the inner RF electrode may include a ground portion that grounds the inner RF electrode, and a first variable capacitor disposed between the ground portion and the inner RF electrode.

Additionally, the inner RF electrode may be placed closer to the substrate than the outer RF electrode.

Furthermore, an impedance control unit that can control the plasma on the upper part of the substrate by adjusting the impedance is connected to the outer RF electrode, and the impedance control unit is connected to a ground part that grounds the outer RF electrode, and between the ground part and the outer RF electrode. It may include a second variable capacitor disposed in.

Meanwhile, at least a portion of the edge of the outer RF electrode may be disposed to overlap the inner RF electrode.

Additionally, the heater block may further include a heater unit that heats the substrate.

Meanwhile, the object of the present invention as described above is a chamber that provides a processing space for a substrate, a gas supply unit provided inside the chamber to supply process gas toward the substrate and to which RF power is applied, and a gas supply unit provided inside the chamber to supply process gas to the substrate. A substrate support unit is provided including a heater block provided opposite the supply unit to support the substrate, and an RF electrode provided on the heater block and grounded, wherein the RF electrode is disposed in the center of the heater block, An inner RF electrode for chucking a substrate and an outer RF electrode disposed at the edge of the inner RF electrode and capable of controlling plasma on the upper part of the substrate by adjusting impedance, the outer RF electrode is located at the edge of the inner RF electrode. It has an edge portion disposed and formed with an opening, and a connection portion that connects the edge portions across the opening, wherein the connection portion includes at least one central connection portion passing through the center of the opening, and each branching from both ends of the central connection portion. This is achieved by a substrate processing apparatus characterized by having a plurality of branch connection parts connected to the edge part.

According to the present invention having the above-described configuration, when processing a substrate using plasma, plasma non-uniformity in the center and edge portions of the substrate can be resolved.

1 is a side view of a substrate processing apparatus according to an embodiment of the present invention.
Figure 2 is a partial enlarged view of the substrate support unit in Figure 1.
FIG. 3 is a top view of an inner RF electrode and an outer RF electrode. FIG. 3 (A) is a top view of the outer RF electrode, and FIG. 3 (B) is a top view of the inner RF electrode.
Figure 4 is a plan view showing the arrangement of the inner RF electrode and the outer RF electrode. In order to illustrate the positional relationship between the inner RF electrode and the outer RF electrode according to an embodiment, a portion of the outer RF electrode covered by the inner RF electrode is shown as a silver line. This is a floor plan shown as .
Figure 5 is a plan view showing a partial configuration of an outer RF electrode covered by an inner RF electrode according to another embodiment, using a silver line.
6 to 10 are plan views showing outer RF electrodes according to another embodiment.

Hereinafter, a substrate support unit and a substrate processing apparatus according to an embodiment of the present invention will be examined in detail with reference to the drawings.

Figure 1 is a side cross-sectional view of a substrate processing apparatus 1000 according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 1000 includes a chamber 100 that provides a processing space 110 for the substrate 10, and is provided inside the chamber 100 toward the substrate 10. It may be provided with a gas supply unit 130 that supplies process gas and RF power is applied, and a substrate support unit 300 provided inside the chamber 100 opposite the gas supply unit 130.

The chamber 100 provides a processing space 110 where various processing processes for the substrate 10 can be performed.

A gas supply unit 130 that supplies process gas to the substrate 10 may be provided at the upper inner part of the chamber 100.

The gas supply unit 130 may be configured as, for example, a showerhead in which a plurality of supply holes 132 are formed.

A supply line 120 through which various process gases are supplied may be connected to the upper part of the chamber 100. A diffusion space 134 through which the process gas diffuses may be provided between the gas supply unit 130 and the ceiling of the chamber 100. Accordingly, the process gas supplied through the supply line 120 may be supplied to the processing space 110 through the diffusion space 134 and the gas supply unit 130.

Meanwhile, when performing various processing processes on the substrate 10, plasma can be used to increase the efficiency of the processing process. In this case, the RF power supply unit 140 is connected to the gas supply unit 130 so that RF power can be applied to the gas supply unit 130. The gas supply unit 130 itself may serve as an RF power electrode, or, although not shown in the drawing, it may be provided with a separate RF power electrode. The configuration of the gas supply unit 130 and the supply line 120 is merely an example and may be modified and applied as appropriate.

When RF power is applied to the gas supply unit 130, the RF electrodes 400 and 500 are grounded to the substrate support unit 300 provided opposite the gas supply unit 130 inside the chamber 100. It can be provided.

FIG. 2 is a partial enlarged view of the substrate support unit 300 in FIG. 1 .

Referring to Figures 1 and 2, the substrate support unit 300 includes a heater block 310 supporting the substrate 10, and RF electrodes 400 and 500 provided on the heater block 310 and grounded. may include.

The heater block 310 includes a heater unit 600, which serves to heat and support the substrate 10, as will be described later.

For example, a concave portion 312 in which the substrate 10 is accommodated may be formed in the upper part of the heater block 310, and a plurality of concave portions 312 in which the substrate 10 is seated may be formed inside the concave portion 312. Several protrusions 314 may be formed. Accordingly, the substrate 10 is seated on the upper part of the protrusion 314 and the processing process can proceed.

Meanwhile, as described above, the substrate support unit 300 may be provided with RF electrodes 400 and 500 that serve as ground electrodes when a plasma process is performed on the substrate 10.

For example, the RF electrodes 400 and 500 are disposed at the edge of the inner RF electrode 400 and the inner RF electrode 400 disposed on the heater block 310, and the inner RF electrode An outer RF electrode 500 whose impedance can be adjusted independently of 400 may be provided.

In the present invention, rather than providing a single ground electrode, two or more separate ground electrodes are provided. Generally, when a plasma treatment process is performed on a substrate using plasma, the uniformity of the plasma decreases from the center to the edge of the substrate. In order to solve this problem, the present invention provides a ground electrode divided into an inner RF electrode 400 and an outer RF electrode 500, and further controls the density or distribution of plasma through the outer RF electrode 500. do.

First, the inner RF electrode 400 is placed in the center of the heater block 310, and the outer RF electrode 500 is placed in the heater block 310 along the edge of the inner RF electrode 400. You can.

The inner RF electrode 400 serves not only as an RF ground electrode but also as an electrostatic chuck electrode that chucks the substrate 10 by electrostatic force. Therefore, in order to maintain the chucking force by the inner RF electrode 400 above a certain level, the inner RF electrode 400 moves the substrate 10 in the heater block 310 compared to the outer RF electrode 500. It can be placed closer to .

That is, the inner RF electrode 400 and the outer RF electrode 500 may be arranged with a height difference (H) on the heater block 310, and the inner RF electrode 400 may be positioned higher, for example. It may be placed close to the substrate 10.

Figure 3 corresponds to a plan view of the inner RF electrode 400 and the outer RF electrode 500. FIG. 3 (A) is a top view of the outer RF electrode 500, and FIG. 3 (B) is a top view of the inner RF electrode 400. Additionally, Figure 4 is a plan view showing the arrangement of the inner RF electrode 400 and the outer RF electrode 500. FIG. 4 is a plan view illustrating a portion of the outer RF electrode 500 covered by the inner RF electrode 400 with a hidden line to illustrate the positional relationship between the inner RF electrode 400 and the outer RF electrode 500. .

Referring to Figures 3 and 4, the inner RF electrode 400 may be composed of a bipole electrode or a monopole electrode. FIG. 3B shows an inner RF electrode 400 in the form of a bipole electrode, and FIG. 5 shows an inner RF electrode 4000 in the form of a monopole electrode. First, we will look at the inner RF electrode 400 in the form of a bipole electrode, and then we will look at the inner RF electrode 4000 in the form of a monopole electrode.

As shown in FIGS. 3 and 4, an anode and a cathode may be applied to the inner RF electrode 400. To this end, the inner RF electrode 400 may be divided into multiples of 2 and spaced apart at a predetermined interval (G) and provided in the central portion of the heater block 310.

In the case of this embodiment, the inner RF electrode 400 is divided into two, but it is not limited to this and can be divided into multiples of 2, such as 4 or 6.

For example, the inner RF electrode 400 may be divided into a first inner RF electrode 410 and a second inner RF electrode 420. In this case, the first inner RF electrode 410 and the second inner RF electrode 420 may have a symmetrical shape and may be arranged to be spaced apart by a predetermined distance (G).

When an anode is applied to one of the first inner RF electrode 410 and the second inner RF electrode 420, a cathode may be applied to the other one.

Meanwhile, a chucking circuit unit 440 (see FIG. 2) may be connected to the inner RF electrode 400 to exert a chucking force for chucking the substrate 10.

As shown in FIG. 2, the chucking circuit unit 440 includes a chucking DC power supply unit 446 that applies chucking power and resistors 442 and 444 respectively connected to the divided electrodes of the inner RF electrode 400 described above. It can be provided. The resistors 442 and 444 serve to limit or control the current applied to the divided electrodes of the inner RF electrode 400.

Meanwhile, the inner RF electrode 400 may be provided with a ground circuit portion 430 that grounds the inner RF electrode 400. The ground circuit unit 430 may include a ground unit 436 and first variable capacitors 432 and 434 disposed between the ground unit 436 and the inner RF electrode 400.

The first variable capacitors 432 and 434 may be arranged respectively connected to the divided electrodes of the inner RF electrode 400 described above, or may be connected to at least one divided electrode.

In this embodiment, the first variable capacitors 432 and 434 are composed of a 1-1 variable capacitor 432 and a 1-2 variable capacitor 434, and are connected to the first inner RF electrode 410 and the second inner RF electrode 410. Each may be connected to the RF electrode 420.

As described above, the inner RF electrode 400 serves as a ground electrode for plasma and also as an electrostatic chuck electrode for chucking the substrate 10. The first variable capacitors 432 and 434 pass only the RF current transmitted through the inner RF electrode 400. In addition, when the capacity of the first variable capacitors 432 and 434 is adjusted according to the heater and facility structure, process conditions, plasma state, etc., it is possible to control the current transmitted to the ground through the inner RF electrode 400. Additionally, the first variable capacitors 432 and 434 prevent the DC current of the electrostatic chuck from passing through and only allow the RF current to pass through.

Meanwhile, as described above, the outer RF electrode 500 is disposed below the inner RF electrode 400 in the heater block 310.

In this case, the height difference (H) between the outer RF electrode 500 and the inner RF electrode 400 may be determined in advance. For example, if the height difference (H) is too small, the leakage current between the outer RF electrode 500 and the inner RF electrode 400 increases, and conversely, if the height difference (H) is too large, the outer RF The electrode 500 is placed too low and cannot properly function as a ground electrode. Therefore, the height difference (H) between the outer RF electrode 500 and the inner RF electrode 400 may be determined to be, for example, approximately 1 mm to 5 mm, and preferably the height difference (H) is approximately 2 mm. can be decided.

Meanwhile, as described above, when the inner RF electrode 400 is composed of bipole electrodes and arranged to be divided, plasma unevenness may occur in the upper part of the substrate 10 due to the divided gap G.

Referring to FIGS. 3 and 4, in order to resolve this plasma non-uniformity, the outer RF electrode 500 is provided with at least one connection portion 511 and 517 disposed along the divided interval of the inner RF electrode 400. can do.

That is, uniformity of plasma can be maintained by covering the gap G of the inner RF electrodes 400 with the connecting portions 511 and 517 on a plane.

In this case, the outer RF electrode 500 is disposed at the edge of the inner RF electrode 400 and includes an edge portion 510 in which an opening 516 is formed, and at least two or more electrodes disposed inside the edge portion 510. Connection parts 511 and 517 may be provided.

The connecting portions 511 and 517 each have at least one central connecting portion 512 and 514 that passes through the central portion of the opening 516 and branch off from both ends of the central connecting portions 512 and 514, respectively, to form the edge portion 510. ) may be provided with a plurality of branch connection parts (513A, 513B, 515A, 515B) connected to.

In this case, the central connection parts 512 and 514 may be configured as a straight line passing through the center of the outer RF electrode 500.

For example, the connection parts 511 and 517 are arranged along the divided gap G of the inner RF electrode 400, and at least one first connection part 511 whose both ends are connected to the edge part 510 It may include at least one second connection part 517 that crosses the opening 516 and intersects the first connection part 511 and is symmetrically disposed with the first connection part 511.

The first connection portion 511 is connected to the edge portion 510 by branch connection portions 513A and 513B provided at both ends, and the width W1 of the central connection portion 512 is equal to that of the inner RF electrode 400. It can be formed with a gap (G) or more. Additionally, the width of the branch connection portions 513A and 513B may be equal to or smaller than the width W1 of the central connection portion 512.

Likewise, the second connection portion 517 is connected to the edge portion 510 by branch connection portions 515A and 515B provided at both ends, and the width of the central connection portion 514 is the spacing of the inner RF electrode 400. (G) It can be formed as above. Additionally, the width of the branch connection portions 515A and 515B may be the same as or smaller than the width of the central connection portion 514.

In this case, the plurality of branch connection parts 513A, 513B, 515A, and 515B may be symmetrically connected to each other and branch from the central connection parts 512 and 514, respectively.

For example, the plurality of branch connection parts 513A, 513B, 515A, and 515B may be configured as a pair, each branching from both ends of the central connection parts 512 and 514.

As the area where the first connection part 511 and the second connection part 517 overlap with the inner RF electrode 400 increases, leakage current may increase. Therefore, it is preferable that the branch connection parts 513A, 513B, 515A, and 515B branching from the first connection part 511 and the second connection part 517 are formed as a pair.

In addition, if the branch connectors 513A, 513B, 515A, 515B are not provided and the central connectors 512, 514 are directly connected to the edge portion 510, the current path of the outer RF electrode 500 path) The length may vary. That is, at the center of the point where the central connection portions 512 and 514 are respectively connected to the edge portion 510, current may have the freedom to flow in any direction among the pair of central connection portions 512 and 514. Therefore, the current path length may vary each time, which may result in the current path length becoming longer. In the present invention, in order to solve this problem, the branch connection parts 513A, 513B, 515A, and 515B are provided at both ends of the central connection parts 512 and 514 to minimize the area where the above-described randomness can occur.

Meanwhile, when the inner RF electrode 400 and the outer RF electrode 500 are arranged concentrically in the heater block 310, the inner RF electrode is connected in a plane by the central connection portion 512 of the first connection portion 511. By covering the gap G of 400 as much as possible, plasma non-uniformity on the upper part of the substrate 10 can be resolved.

The second connection part 517 is arranged to intersect the first connection part 511 and may be arranged symmetrically about the center of the outer RF electrode 500.

As described above, when the first connection part 511 connects the central part of the edge part 510, the area where the branch connection parts 513A and 513B of the first connection part 511 are connected to the edge part 510 The impedance of may be different from the impedance of the area of the edge portion 510 where the first connection portion 511 is not connected. Since this non-uniformity of impedance can reduce the uniformity of plasma, in this embodiment, a second connection part 517 disposed symmetrically with the first connection part 511 may be further provided.

Meanwhile, referring to FIG. 2, the outer RF electrode 500 is configured to adjust the density or distribution of plasma. For example, the outer RF electrode 500 is independently from the inner RF electrode 400. An impedance control unit 520 that can control the plasma on the upper part of the substrate 10 by adjusting the impedance may be connected.

The impedance adjusting unit 520 includes a ground unit 526 that grounds the outer RF electrode 500, and a second variable capacitor 524 disposed between the ground unit 526 and the outer RF electrode 500. may include.

In this case, the capacity of the second variable capacitor 524 is adjusted to adjust the impedance of the outer RF electrode 500 to control the plasma on the upper part of the substrate 10. A coil 522 may be further provided between the second variable capacitor 524 and the outer RF electrode 500.

Additionally, a ground rod connecting the ground portion 526 and the outer RF electrode 500 may be connected to the center of the aforementioned connection portions 512 and 514. In this case, an equal value of impedance can be distributed throughout the outer RF electrode 500.

Meanwhile, when the inner RF electrode 400 and the outer RF electrode 500 are provided as described above, the inner RF electrode 400 may have a diameter or area approximately similar to that of the substrate 10. This is because the inner RF electrode 400 also functions as an electrostatic chuck electrode.

Therefore, it is necessary to secure a sufficient area for the outer RF electrode 500 to function as a ground electrode. However, the size of the heater block 310 is determined in accordance with the size of the substrate 10. Therefore, when the size or diameter of the substrate 10 and the heater block 310 is small, at least a portion of the outer RF electrode 500 is used as shown in FIG. 4 to secure the area of the outer RF electrode 500. may be disposed to overlap with the inner RF electrode 400.

For example, at least a portion of the edge portion 510 of the outer RF electrode 500 may be disposed to overlap the inner RF electrode 400. That is, the inner side of the edge portion 510 of the outer RF electrode 500, a portion of the first connection portion 511, and the second connection portion 517 overlap with the inner RF electrode 400 on a plane, thereby forming the outer RF The area of the electrode 500 can be expanded. However, as the overlap area between the outer RF electrode 500 and the inner RF electrode 400 becomes wider, the leakage current may increase, so the overlap area can be determined by considering the correlation between the overlap area and leakage current.

Meanwhile, referring to FIG. 2, the heater block 310 may further include a heater unit 600 that heats the substrate 10.

The heater unit 600 includes at least one resistance member 610, 620 disposed on the heater block 310, and power application units 612, 622 that apply power to the resistance members 610, 620, A ground portion 630 may be provided.

In this embodiment, the resistance members 610 and 620 may include a first resistance member 610 and a second resistance member 620 disposed on the heater block 310. The number and location of these resistance members 610 and 620 are only described as an example and may be modified as appropriate.

Meanwhile, the first resistance member 610 and the second resistance member 620 can be connected to the first power application unit 612 and the second power application unit 622, respectively, to receive power.

Meanwhile, Figure 5 is a plan view showing a case where an inner RF electrode 4000 is provided according to another embodiment. Other components are the same as those in FIGS. 3 and 4 described above.

As shown in FIG. 5, the inner RF electrode 4000 may be configured in the form of a monopole electrode in addition to the bipole electrode form described above. In this case, unlike the embodiments of FIGS. 3 and 4 described above, the inner RF electrode 4000 may not be divided but may be composed of a single member.

In the case of this embodiment, since there is no gap between the inner RF electrodes 4000, plasma non-uniformity can be reduced as much as possible.

Meanwhile, Figures 6 to 10 are plan views showing outer RF electrodes according to another embodiment.

Referring to FIG. 6, the outer RF electrode 5000 according to this embodiment has an edge portion 5100 with an opening 5162 and connection portions 5110, 5170, and 5190, and the connection portions 5110, 5170, and 5190 ) can be provided with three or more.

That is, in this embodiment, the connection parts 5110, 5170, and 5190 may include a first connection part 5110, a second connection part 5170, and a third connection part 5190.

In addition, the configuration in which each connection part (5110, 5170, 5190) has a central connection part (5120, 5140, 5160) and branch connection parts (5130A, 5130B, 5150A, 5150B, 5170A, 5170B) is similar to the above-described embodiment, so it is repetitive. The description is omitted.

In this embodiment, compared to the above-described embodiment, the number of connection parts 5110, 5170, and 5190 is increased, so that the area showing the above-mentioned randomness can be further reduced, and furthermore, impedance non-uniformity can be minimized.

Meanwhile, in the above-described embodiments, the edge portions 510 and 5100 of the outer RF electrodes 500 and 5000 have a shape in which they are integrally connected.

In this case, induced electromotive force may be generated according to a change in magnetic flux passing inside the edge portions 510 and 5100 of the outer RF electrodes 500 and 5000. The induced electromotive force may induce disturbance in the outer RF electrodes 500 and 5000, causing plasma non-uniformity.

In the present invention, in order to solve the above-described problem, the edge portion of the outer RF electrode may be composed of a plurality of divided edge portions arranged to be spaced apart from each other.

7 to 10 show various embodiments of outer RF electrodes (500', 500", 5000', 5000") composed of a plurality of divided edge portions. Figures 7 and 8 show a case where there are two connection parts 511 and 517 connecting the edge parts 510' and 510", and Figures 9 and 10 show the edge parts 5100' and 5100". A case where there are three connection parts 5110, 5170, and 5190 that connect is shown.

Referring to FIG. 7, the outer RF electrode 500' according to this embodiment has an edge portion 510' formed with an opening 516 and connection portions 511 and 517, and the connection portions 511 and 517 have Branch connections (513A, 513B, 515A, 515B) may be provided at both ends.

Meanwhile, the edge portion 510' may be composed of a plurality of divided edge portions 510A, 510B, 510C, and 510D. Each divided edge portion 510A, 510B, 510C, and 510D may be arranged to be spaced apart from each other in the circumferential direction at a predetermined interval 518. For example, the edge portion 510' may be composed of a first split edge portion 510A, a second split edge portion 510B, a third split edge portion 510C, and a fourth split edge portion 510D. You can.

In this case, at least two of the plurality of branch connection parts 513A, 513B, 515A, and 515B may be connected to the same split edge part 510A, 510B, 510C, and 510D.

For example, a pair of first branch connection parts 513A formed at one end of the first connection part 511 may be connected to the first split edge part 510A. Likewise, a pair of second branch connection parts 513B formed at the other end of the first connection part 511 may be connected to the third split edge part 510C.

A pair of first branch connection parts 515A formed at one end of the second connection part 517 are both connected to the fourth split edge part 510D, and a pair of first branch connection parts 515A formed at the other end of the second connection part 517 All of the second branch connection portions 515B may be connected to the second split edge portion 510B.

Therefore, in this embodiment, the number of divided edge portions 510A, 510B, 510C, and 510D may be twice the number of connecting portions 511 and 517.

Meanwhile, referring to FIG. 8, the outer RF electrode 500” according to the present embodiment has an edge portion 510” with an opening 516 and connection portions 511 and 517, and the connection portions 511 and 517 ) may be provided with branch connections (513A, 513B, 515A, 515B) at both ends.

Meanwhile, the edge portion 510” may be composed of a plurality of divided edge portions 510A', 510B', 510C', 510D', 510E', 510F', 510G', and 510H'. In this embodiment, The number of the plurality of split edge portions 510A', 510B', 510C', 510D', 510E', 510F', 510G', and 510H' is determined by the number of branch connections 513A, 513B, 515A, It can correspond to the number of 515B).

That is, when the connection parts 511 and 517 have a pair of branch connection parts 513A, 513B, 515A, and 515B at both ends, the split edge parts 510A', 510B', 510C', 510D', and 510E. ', 510F', 510G', 510H') may be four times the number of the connection portions 511 and 517.

Therefore, when the connection portions 511 and 517 are composed of two, the divided edge portions 510A', 510B', 510C', 510D', 510E', 510F', 510G', and 510H' are composed of eight pieces. The edge portion 510” may be composed of a first divided edge portion 510A’ to an eighth divided edge portion 510H’.

In this case, the plurality of branch connection parts 513A, 513B, 515A, and 515B may be respectively connected to the split edge parts 510A' to 510H'.

That is, in this embodiment, one branch connection portion (513A, 513B, 515A, 515B) is connected to one split edge portion (510A' to 510H'), and the different branch connection portions (513A, 513B, 515A, 515B) are connected to each other. It is not connected to the same division edge portions 510A' to 510H'.

Meanwhile, referring to FIG. 9, the outer RF electrode 5000' according to the present embodiment has an edge portion 5100' formed with an opening 5162 and connection portions 5110, 5170, and 5190, and the connection portion 5110 , 5170, 5190) may be provided with branch connection portions (5130A, 5130B, 5150A, 5150B, 5170A, 5170B) at both ends.

Meanwhile, the edge portion 5100' may be composed of a plurality of divided edge portions 5100A, 5100B, 5100C, 5100D, 5100E, and 5100F. Each divided edge portion 5100A, 5100B, 5100C, 5100D, 5100E, and 5100F may be arranged to be spaced apart from each other in the circumferential direction at a predetermined distance 5180. For example, the edge portion 5100' may be composed of a first divided edge portion 5100A to a sixth divided edge portion 5100F.

In this case, at least two of the plurality of branch connectors 5130A, 5130B, 5150A, 5150B, 5170A, and 5170B may be connected to the same split edge portions 5100A to 5100F.

For example, a pair of first branch connection parts 5130A formed at one end of the first connection part 5110 may be connected to the first split edge part 5100A. Likewise, a pair of second branch connection parts 5130B formed at the other end of the first connection part 5110 may be connected to the fourth split edge part 5100D. The second connection part 5170 and the third connection part 5190 may also have a similar configuration.

Therefore, in this embodiment, the number of divided edge portions 5100A to 5100F may be twice the number of connecting portions 5110, 5170, and 5190.

Meanwhile, referring to FIG. 10, the outer RF electrode 5000” according to the present embodiment includes an edge portion 5100” with an opening 5162 and connection portions 5110, 5170, and 5190, and the connection portion 5110 , 5170, 5190) may be provided with branch connection portions (5130A, 5130B, 5150A, 5150B, 5170A, 5170B) at both ends.

Meanwhile, the edge portion 5100” may be composed of a plurality of split edge portions 5100A’ to 5100L’. In this embodiment, the number of the plurality of split edge portions 5100A’ to 5100L’ is determined by the connection portion ( It can correspond to the number of branch connections (5130A, 5130B, 5150A, 5150B, 5170A, 5170B) of 5110, 5170, and 5190.

That is, when the connecting portions 5110, 5170, and 5190 each have a pair of branch connecting portions 5130A, 5130B, 5150A, 5150B, 5170A, and 5170B at both ends, the split edge portions 5100A' to 5100L' The number may be four times the number of the connection parts 5110, 5170, and 5190.

Therefore, when the connection portions 5110, 5170, and 5190 are composed of three, the divided edge portions 5100A' to 5100L' may be composed of 12 pieces, and the edge portion 5100” is the first divided edge portion. It may be composed of (5100A') to the 12th divided edge portion (5100L').

In this case, the plurality of branch connection parts 5130A, 5130B, 5150A, 5150B, 5170A, and 5170B may be respectively connected to the split edge parts 5100A' to 5100L'.

That is, in this embodiment, one branch connection part (5130A, 5130B, 5150A, 5150B, 5170A, 5170B) is connected to one split edge part (5100A' to 5100L'), and the different branch connection parts (5130A, 5130B, 5150A) , 5150B, 5170A, 5170B) are not connected to the same division edge portions 5100A' to 5100L'.

Meanwhile, the inner RF electrode applied to the outer RF electrodes (500', 500", 5000, 5000', 5000") according to FIGS. 6 to 10 can be any of the bipole or monopole electrodes described above. It can be applied.

Although the present invention has been described above with reference to preferred embodiments, those skilled in the art may make various modifications and changes to the present invention without departing from the spirit and scope of the present invention as set forth in the claims described below. You can do it. Therefore, if the modified implementation basically includes the elements of the claims of the present invention, it should be considered to be included in the technical scope of the present invention.

10: substrate
100: chamber
110: processing space
120: supply line
130: Gas supply unit
140: RF power unit
300: Substrate support unit
310: heater block
400: Inner RF electrode
410: First inner RF electrode
420: Second inner RF electrode
430: Ground circuit part
440: Chucking circuit part
500: Outer RF electrode
511, 517: connection part
512, 514: central connection
513A, 513B, 515A, 515B: Branch connection
520: Impedance adjustment unit
600: Heater unit
610, 620: Resistance member
1000: Substrate processing device

Claims (18)

Heater block supporting the substrate;
an inner RF electrode disposed on the heater block and chucking the substrate; and
an outer RF electrode disposed at the edge of the inner RF electrode and capable of adjusting impedance independently of the inner RF electrode,
The outer RF electrode is disposed at the edge of the inner RF electrode and has an edge portion with an opening, and at least two connection portions that connect the edge portions across the opening,
The substrate support unit, wherein the connection part includes a central connection part that passes through the center of the opening, and a plurality of branch connection parts that branch off from both ends of the central connection part and are connected to the edge portion. According to paragraph 1,
A substrate support unit, characterized in that the plurality of branch connection parts are symmetrically connected to each other and branch from the central connection part. According to paragraph 2,
The plurality of branch connections are
A substrate support unit, characterized in that it consists of a pair branched from both ends of the central connection portion. According to paragraph 1,
The inner RF electrode is composed of a bipole electrode, divided into multiples of 2, and arranged to be spaced apart at a predetermined interval. In paragraph 4
A substrate support unit, characterized in that at least one of the central connectors is disposed along the divided intervals of the inner RF electrode. According to paragraph 4,
The edge of the outer electrode is
A substrate support unit characterized in that it consists of a plurality of divided edge portions arranged to be spaced apart from each other. According to clause 6,
A substrate support unit, characterized in that the plurality of branch connection parts are respectively connected to the divided edges. According to clause 6,
A substrate support unit, characterized in that at least two of the plurality of branch connection parts are connected to the same divided edge part. According to paragraph 1,
A substrate support unit, characterized in that the inner RF electrode is composed of a monopole electrode. According to clause 9,
The edge of the outer electrode is
A substrate support unit characterized in that it consists of a plurality of divided edge portions arranged to be spaced apart from each other. According to clause 10,
A substrate support unit, characterized in that the plurality of branch connection parts are respectively connected to the divided edges. According to clause 10,
A substrate support unit, characterized in that at least two of the plurality of branch connection parts are connected to the same divided edge part. According to paragraph 1,
The inner RF electrode is
A substrate support unit comprising a ground portion that grounds the inner RF electrode, and a first variable capacitor disposed between the ground portion and the inner RF electrode. According to paragraph 1,
A substrate support unit, wherein the inner RF electrode is disposed closer to the substrate than the outer RF electrode. According to paragraph 1,
An impedance control unit that can control the plasma on the upper part of the substrate by adjusting the impedance is connected to the outer RF electrode,
The impedance adjustment unit is a substrate support unit characterized in that it includes a ground portion that grounds the outer RF electrode, and a second variable capacitor disposed between the ground portion and the outer RF electrode. According to paragraph 1,
A substrate support unit, wherein at least a portion of the edge of the outer RF electrode is disposed to overlap the inner RF electrode. According to paragraph 1,
A substrate support unit, characterized in that the heater block further includes a heater unit for heating the substrate. A chamber that provides processing space for a substrate;
A gas supply unit provided inside the chamber to supply process gas toward the substrate and to which RF power is applied; and
A substrate support unit including a heater block provided inside the chamber opposite the gas supply unit to support the substrate, and an RF electrode provided on the heater block and grounded,
The RF electrode is disposed in the center of the heater block, and includes an inner RF electrode that churns the substrate, and an outer RF electrode that is disposed at the edge of the inner RF electrode and can control the plasma on the upper part of the substrate by adjusting impedance. do,
The outer RF electrode is disposed at the edge of the inner RF electrode and has an edge portion with an opening formed thereon, and a connection portion connecting the edge portions across the opening, and the connection portion includes at least one connection portion passing through the center of the opening. A substrate processing apparatus comprising a central connection portion and a plurality of branch connection portions each branched from both ends of the central connection portion and connected to the edge portion.