KR20240016204A - Coating member for heater used at high temperature and mehtod for manufacturing the same - Google Patents

Abstract

A coating material for a high-temperature heater with high corrosion resistance in plasma or a strong corrosive atmosphere and a method for manufacturing the same are provided. Coatings for high temperature heaters are applied for use in corrosive atmospheres within process chambers. The method of manufacturing a coating material for a high temperature heater includes the steps of i) providing a base material for a high temperature heater, ii) providing a buffer layer containing MgAl ₂ O _4-x (0<x≤0.2) on the base material, iii) Y on the buffer layer It includes providing a coating layer containing ₂ O _3-z (0<z≤0.2), and iv) heat treating the base material, buffer layer, and coating layer.

Description

Coating material for high temperature heater and method of manufacturing the same {COATING MEMBER FOR HEATER USED AT HIGH TEMPERATURE AND MEHTOD FOR MANUFACTURING THE SAME}

The present invention relates to a coating material for high temperature heaters and a method of manufacturing the same. More specifically, it relates to a coating material that has corrosion resistance even under plasma or a strong corrosive atmosphere in a high-temperature heater used in a chamber, and a method of manufacturing the same.

The high-temperature heater functions to maintain the chamber at a high temperature to perform ultra-high temperature thin film processes during semiconductor or OLED panel manufacturing. The heater includes a heating plate and a support bar that supports it vertically. The heating plate heats an object such as a semiconductor wafer mounted on it. Heating wires, etc. are embedded in the heating plate. Heat the heating plate using a heating element. The support is formed as a hollow structure and an incoming line that supplies power to the heating wire is installed.

Meanwhile, the surface of the high-temperature heater may be peeled off by plasma formed inside the chamber and particles may be generated. Therefore, a coating material is formed on the surface of the high-temperature heater to prevent particle generation. However, the coating material also has the problem of peeling off when subjected to thermal shock.

Korean Patent No. 1,961,411

The aim is to provide a coating material for high temperature heaters that is corrosion resistant even in plasma or strong corrosive atmospheres. Additionally, it is intended to provide a method for manufacturing such a coating material.

A method of manufacturing a coating material for a high temperature heater according to an embodiment of the present invention includes the steps of i) providing a base material for a high temperature heater, ii) forming a buffer layer containing MgAl ₂ O _4-x (0<x≤0.2) on the base material. It includes the steps of providing, iii) providing a coating layer containing Y ₂ O _3-z (0<z≤0.2) on the buffer layer, and iv) heat treating the base material, buffer layer, and coating layer. Coatings for high temperature heaters are applied for use in corrosive atmospheres within process chambers.

In the step of providing a coating layer, the coating layer may be provided on the buffer layer by PVD (physical vapor deposition). In the step of providing the buffer layer, the buffer layer may be provided by physical vapor deposition (PVD), suspension plasma spray (SPS), or aerosol deposition (AD). In the step of providing the base material, the base material may include AlN. In the heat treatment step, the heat treatment temperature may be 600°C to 1000°C. In the step of providing a buffer layer, x may be greater than 0 and less than or equal to 0.1. In the step of providing the coating layer, z may be greater than 0 and less than or equal to 0.1.

The coating material for a high temperature heater according to an embodiment of the present invention can be applied for use in a corrosive atmosphere within a chamber. The coating material for a high temperature heater includes i) a base material for a high temperature heater, ii) a buffer layer located on the base material and containing MgAl ₂ O ₄ spinel, and iii) a coating layer located on the buffer layer and containing Y ₂ O ₃ .

The base material may include AlN. The thermal expansion coefficient of the coating layer is greater than that of the buffer layer, and the thermal expansion coefficient of the buffer layer may be greater than that of the base material. The difference between the thermal expansion coefficient of the base material and the buffer layer may be smaller than the difference between the thermal expansion coefficient of the buffer layer and the coating layer. The difference between the thermal expansion coefficient of the base material and the buffer layer may be 0.5 ppm/K to 1 ppm/K.

Through the coating material according to an embodiment of the present invention, it is possible to manufacture a high-temperature heater that has corrosion resistance against plasma and whose surface is not easily peeled off. In addition, it is possible to manufacture a high-temperature heater that has excellent durability even in a highly corrosion-resistant atmosphere within a process chamber device and can be used for a long period of time. High-temperature heaters do not corrode easily in plasma or strong acidic atmospheres and do not cause peeling. Additionally, since there is no possibility of aggregates falling within the process chamber device due to peeling of the high-temperature heater coating material, contamination within the process chamber device can be prevented.

1 is a schematic diagram of a process chamber device equipped with a high-temperature heater containing a coating material according to an embodiment of the present invention.
Figure 2 is a schematic cross-sectional view of the coating material of Figure 1.
Figure 3 is a schematic flowchart of a method for manufacturing a coating material according to an embodiment of the present invention.
Figures 4 to 7 are diagrams schematically showing each step of the method of manufacturing the coating material of Figure 3.
Figures 8 and 9 are XRD experimental graphs of the coating material according to Experimental Example 1 and Experimental Example 2 of the present invention, respectively.
Figures 10 and 11 are photographs before and after the heat resistance evaluation experiment of the coating material according to Experimental Example 1 of the present invention and Comparative Example of the prior art, respectively.

The terminology used herein is only intended to refer to specific embodiments and is not intended to limit the invention. As used herein, singular forms include plural forms unless phrases clearly indicate the contrary. As used in the specification, the meaning of "comprising" is to specify a specific characteristic, area, integer, step, operation, element and/or component, and to specify another specific property, area, integer, step, operation, element, component and/or group. It does not exclude the existence or addition of .

Although not defined differently, all terms including technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art in the technical field to which the present invention pertains. Terms defined in commonly used dictionaries are further interpreted as having meanings consistent with related technical literature and currently disclosed content, and are not interpreted in ideal or very formal meanings unless defined.

The term coating material used below refers to a component that forms the inner surface of a chamber used for dry etching of displays, etc. Therefore, the coating material is interpreted as a component in which a coating layer is formed on the base material that forms the inner surface of the chamber. As a result, the coating material includes a coating layer.

Hereinafter, with reference to the attached drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily implement the present invention. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein.

Figure 1 schematically shows a process chamber device 1000 equipped with a high temperature heater 100 containing a coating material 10 according to an embodiment of the present invention. The structure of the process chamber device 1000 in FIG. 1 is merely for illustrating the present invention, and the present invention is not limited thereto. Therefore, the structure of the process chamber device 1000 can be modified into other forms.

The process chamber device 1000 includes a high temperature heater 100, a support 200, a heating power source 300, a vacuum pump 400, and a chamber body 500. In addition, the process chamber device 1000 may further include other components. Since the detailed structure of the process chamber device 1000 can be easily understood by those skilled in the art, detailed description thereof will be omitted. A wafer (W), an object to be processed, is placed on the high temperature heater 100. The process chamber device 1000 may be a chemical vapor deposition (CVD) device.

The temperature of the wafer (W) is controlled using the high temperature heater 100. That is, the high temperature heater 100 is a ceramic heater for semiconductors and can be used to heat the wafer W to 500°C to 900°C. A heating element 100a is embedded inside the high temperature heater 100 and heated. The high-temperature heater 100 is supported by the support 200 and can move up and down. The support 200 is formed in the shape of a shaft. A conductor 300a is installed inside the support 200 to electrically connect the heating power source 300 and the heating element 100a. The inside of the chamber body 500 is maintained as a vacuum by the exhaust of the vacuum pump 400. Meanwhile, for processing the wafer W, a high-temperature corrosive atmosphere such as plasma is formed in the internal space S of the chamber body 500. Therefore, the surface of the high temperature heater 100 is covered with the coating material 10 to protect the high temperature heater 100. Hereinafter, the coating material 10 will be described in detail through FIG. 2.

FIG. 2 schematically shows the cross-sectional structure of the coating material 10 of FIG. 1. The enlarged circle in FIG. 2 schematically shows the crystal structure of the buffer layer 103. The cross-sectional structure of the coating material 10 in FIG. 2 is merely for illustrating the present invention, and the present invention is not limited thereto. Therefore, the cross-sectional structure of the coating material 10 can be modified into another shape.

As shown in FIG. 2, the coating material 10 includes a base material 101, a buffer layer 103, and a coating layer 105. In addition, the coating material 10 may further include other layers.

The base material 101 forms the high temperature heater 100 (FIG. 1). The base material 101 may include aluminum nitride (AlN), graphite, silicon carbide, or tantalum carbide, or may be formed by combining them. More preferably, the base material 101 may include aluminum nitride (AlN). The base material 101 may be eroded by a high-temperature corrosive atmosphere. Therefore, the base material 101 is protected using the buffer layer 103 and the coating layer 105.

The buffer layer 103 is located on the base material 101. More specifically, the buffer layer 103 is located between the base material 101 and the coating layer 105. When the temperature of the internal space S in FIG. 1 is increased, the base material 101 and the coating layer 105 are thermally expanded due to heat, as indicated by arrows in FIG. 2 . In this case, if the difference in thermal expansion coefficient between the base material 101 and the coating layer 105 is large, cracks may occur in the coating material 10 or peeling may occur. Therefore, by providing a buffer layer 103 that acts as a buffer in thermal expansion coefficient between the base material 101 and the coating layer 105, problems caused by differences in thermal expansion coefficient can be alleviated.

The buffer layer 103 may include MgAl ₂ O ₄ with a spinel structure. MgAl ₂ O ₄ has strong corrosion resistance in high-temperature corrosive atmospheres such as plasma. In addition, the thermal expansion coefficient of MgAl ₂ O ₄ is greater than that of the base material 101 and smaller than that of the coating layer 105. Therefore, when using the high temperature heater 100 (shown in FIG. 1), a buffering effect according to thermal expansion of the base material 101 and the coating layer 105 is possible. If the buffer layer 103 is formed on the coating layer 105, no buffering effect during thermal expansion can be expected.

The enlarged circle in Figure 2 shows MgAl ₂ O ₄ spinel. MgAl ₂ O ₄ spinel has a cubic structure and has excellent chemical and thermal properties. In the spinel structure, oxygen ions occupy a face-centered cubic close-packed structure, divalent magnesium ions form a tetrahedron surrounded by four oxygen atoms, and trivalent aluminum ions form an octahedron surrounded by six oxygen atoms. The tetrahedral space is smaller than the octahedral space; aluminum ions occupy half of the octahedral space, and magnesium ions occupy 1/8 of the tetrahedral space. Due to this lattice structure, MgAl ₂ O ₄ spinel has excellent corrosion resistance and mechanical properties.

The coating layer 105 is located on the buffer layer 103. The coating layer 105 includes yttria (Y ₂ O ₃ ). Yttria has excellent chemical resistance and corrosion resistance. Therefore, yttria is suitable for use as a material for the coating layer 105.

When the base material 101, which is a bulk material, contains AlN, the thermal expansion coefficient of the base material 101 is about 4.5 ppm/K. Additionally, the thermal expansion coefficient of the coating layer 105 containing yttria is about 7ppm/K. The thermal expansion coefficient of the buffer layer 103 containing MgAl ₂ O ₄ spinel is about 5 ppm/K to 6 ppm/K. More specifically, the thermal expansion coefficient of the buffer layer 103 is about 5.6 ppm/K. Therefore, the thermal expansion coefficient of the coating layer 105 is greater than that of the buffer layer 103, and the thermal expansion coefficient of the buffer layer 103 is greater than that of the base material 101. Since the coating material 10 is formed in this way, the coating material 100 is not easily peeled off even if the high temperature heater 100 (shown in FIG. 1) receives thermal shock from plasma or the like.

Meanwhile, the difference between the thermal expansion coefficient of the base material 101 and the buffer layer 103 may be greater than the difference between the thermal expansion coefficient of the buffer layer 103 and the coating layer 105. That is, if the base material 101 is corroded, the high temperature heater 100 (shown in FIG. 1) may be damaged. Therefore, in order to protect the base material 101 as much as possible in a high-temperature corrosion environment, it is desirable to form the buffer layer 103 with a material that has a small difference in thermal expansion coefficient from the base material 10.

MgAl ₂ O ₄ spinel included in the buffer layer 103 satisfies these conditions. Even if the coating layer 105 is peeled from the buffer layer 103 due to a difference in thermal expansion coefficient, the base material 101 can be protected by the buffer layer 103 because the buffer layer 103 is made of a plasma-resistant and corrosion-resistant material. .

More specifically, the difference between the thermal expansion coefficient of the base material 101 and the buffer layer 103 may be 0.5 ppm/K to 1 ppm/K. If the difference in thermal expansion coefficient is too small, peeling may occur due to the difference in thermal expansion coefficient between the coating layer 105 and the buffer layer 103. Additionally, if the difference in thermal expansion coefficient is too large, separation between the base material 101 and the buffer layer 103 may occur. Therefore, the difference between the thermal expansion coefficient of the base material 101 and the thermal expansion coefficient of the buffer layer 103 is maintained in the above-mentioned range.

Figure 3 schematically shows a flow chart of a method for manufacturing a coating material according to an embodiment of the present invention. The method of manufacturing the coating material in FIG. 3 is merely for illustrating the present invention, and the present invention is not limited thereto. Therefore, the manufacturing method of the coating material can be modified into other forms.

As shown in FIG. 3, the method of manufacturing the coating material includes providing a base material for a high temperature heater (S10), providing a buffer layer containing MgAl ₂ O _4-x (0≤x≤0.2) on the base material (S10). S20), providing a coating layer containing Y ₂ O _3-z (0≤z≤0.2) on the buffer layer (S30), and heat treating the base material, buffer layer, and coating layer (S40). In addition, the method of manufacturing the coating material may further include other steps.

Meanwhile, Figures 4 to 7 schematically show each step of the method of manufacturing the coating material of Figure 3 described above. Each step of this coating material manufacturing method is merely for illustrating the present invention, and the present invention is not limited thereto. Therefore, each step of the coating material manufacturing method may be configured differently. Hereinafter, each step of the method for manufacturing the coating material of FIG. 3 will be described in detail with reference to FIGS. 4 to 7.

First, in step S10 of FIG. 3, a base material 101 for a high temperature heater is provided. (shown in FIG. 4) The base material 101 refers to the surface of the high-temperature heater exposed to a high-temperature corrosive atmosphere such as plasma. The base material 101 may include aluminum nitride, graphite, silicon carbide, or tantalum carbide, or may be manufactured by combining them. More preferably, the base material 101 may include aluminum nitride (AlN).

Next, in step S20 of FIG. 3, a buffer layer 103 containing MgAl ₂ O _4-x (0≤x≤0.2) is provided on the base material 101. (shown in FIG. 5) The coating layer to be formed in the subsequent process has low adhesion to the base material 101, and is particularly likely to peel off due to thermal stress when used in a process chamber device. Therefore, the bonding strength with the base material 101 is greatly improved by using the buffer layer 103.

The buffer layer 103 may be provided by physical vapor deposition (PVD), suspension plasma spray (SPS), or aerosol deposition (AD). In addition, the buffer layer 103 can be formed using other processes.

The PVD (physical vapor deposition) process uses magnesium aluminate as a deposition material. That is, magnesium aluminate is used as a raw material, and an ion beam is emitted to transfer energy to the deposited particles emitted from the magnesium aluminate to form the buffer layer 103 on the base material 101.

In the SPS process, the raw material for the buffer layer 103 is manufactured in the form of nano slurry. In the SPS process, the particle size is reduced by ball milling the raw materials using a mixed medium such as ethanol or water to produce a suspension. Then, it is injected into a plasma jet to coat the buffer layer 103 on the base material 101. The density of the buffer layer 103 generated can be adjusted by varying the concentration of the suspension or the speed of the plasma jet. In the SPS process, a small amount of suspension can be supplied from the rear of the plasma jet using a hollow electrode at the anode of the main torch, so the buffer layer 103 can be manufactured by stabilizing the plasma jet. The buffer layer 103 itself manufactured using the SPS process also has excellent plasma resistance and corrosion resistance.

In the aerosol deposition method, the materials of the buffer layer 103 are hydrated and aerosol is generated and used under high pressure and temperature.

The buffer layer 103 includes MgAl ₂ O _4-x (0<x≤0.2). In this case, since the buffer layer 103 is in an oxygen-deficient state, the compound tends to change into a more stable phase by additional absorption of oxygen. In the subsequent process, the coating layer 105 is formed on the buffer layer 103, and oxygen is additionally supplied due to a heat treatment process, so the buffer layer 103 forms an MgAl 2 O ₄ spinel and forms a MgAl ₂ O 4 spinel with the base material 101 and the coating layer 105. bind more strongly. As a result, the corrosion resistance and mechanical strength of the coating material 10 can be greatly improved. More preferably, x may be greater than 0 and less than or equal to 0.1.

In step S30 of FIG. 3, a coating layer 105 is provided on the buffer layer 103. (See FIG. 6) The thickness t103 of the buffer layer 103 is smaller than the thickness t105 of the coating layer 105. The buffer layer 103 serves to alleviate the difference in thermal expansion coefficient between the coating layer 105 and the base material 101, and is formed on the base material 101 in the form of a thin film for this purpose. The coating layer 105 is formed at high density on the buffer layer 103 to improve adhesion with the buffer layer 103. As a result, it is possible to finally manufacture a high-density coating material 10 (shown in FIG. 2).

The coating layer 105 includes Y ₂ O _3-z (0<z≤0.2). In this case, since the coating layer 105 is in an oxygen-deficient state, the compound tends to change into a more stable phase of Y ₂ O ₃ by additional absorption of oxygen. Since oxygen is additionally supplied due to the heat treatment process in the subsequent process, the coating layer 105 is stabilized with Y ₂ O ₃ and bonds more strongly to the buffer layer 103. As a result, the corrosion resistance and mechanical strength of the coating material 10 can be greatly improved. More preferably, z may be greater than 0 and less than or equal to 0.1.

The coating layer may be provided on the buffer layer 103 by physical vapor deposition (PVD). That is, yttrium oxide is used as the deposition material, and an ion beam is emitted to transfer energy to the deposition particles emitted from the yttrium oxide to form the coating layer 105 on the buffer layer 103. As a result, the adhesion of the coating layer 105 to the buffer layer 103 can be improved.

Finally, in step S40 of FIG. 3, the base material 101, the buffer layer 103, and the coating layer 105 are heat treated. The heat treatment temperature may be 600°C to 1000°C. Through heat treatment, these layers can be more firmly bonded by solid phase diffusion at the boundary between the base material 101 and the buffer layer 103 and the boundary between the buffer layer 103 and the coating layer 105, respectively. If the heat treatment temperature is too low, this effect cannot be achieved. Additionally, if the heat treatment temperature is too high, these layers may overheat. Therefore, it is desirable to maintain the heat treatment temperature within the above-mentioned range.

Hereinafter, the present invention will be described in more detail through experimental examples. These experimental examples are merely for illustrating the present invention. The present invention is not limited to this.

Experimental Example 1

A coating material was manufactured by forming a buffer layer and a coating layer made of MgAl ₂ O ₄ on a base material made of AlN using the method of FIG. 3. The manufacturing method of the buffer layer and coating layer will be described in detail below.

Manufacturing of buffer layer

A buffer layer made of MgAl ₂ O ₄ was formed on the AlN base material using the SPS process. First, MgO and Al ₂ O ₃ raw material powder were synthesized to produce MgAl ₂ O ₄ powder. Then, a slurry for suspension plasma spray coating was prepared by mixing MgAl ₂ O ₄ powder pulverized to a size of 3 μm or less and distilled water at a ratio of 3:7. Next, the slurry was supplied to the suspension plasma gun at an input rate of 0.5 mL/sec, and Ar and N ₂ were coated with a power of 60 kW while flowing at 190 sccm and 85 sccm, respectively, to form a 500 nm thick buffer layer on the AlN base material.

Preparation of coating layer

Y ₂ O ₃ was evaporated in the PVD process to form a high-density coating layer at a deposition rate of 50 Å/sec. Finally, the base material, buffer layer, and coating layer were heat treated in an oxygen atmosphere at 600°C for 60 minutes to prepare a coating material. Since the remaining detailed experimental contents can be easily understood by those skilled in the art to which the present invention pertains, detailed description thereof will be omitted.

Experimental Example 2

Manufacturing of buffer layer

A buffer layer made of MgAl ₂ O ₄ was formed on the AlN base material using a PVD process. First, raw material powders of MgO and Al ₂ O ₃ were synthesized to produce MgAl ₂ O ₄ powder. MgAl ₂ O ₄ powder was placed in a pellet press and pressed to produce pellets with a diameter of 25 mm and a thickness of 5 mm. The pellets were sintered at 1200°C for 6 hours and then used as a raw material for PVD coating.

In the PVD process, MgAl ₂ O ₄ pellets were evaporated and a 500 nm thick buffer layer was deposited on an AlN base material specimen with a width of 20 mm, a length of 20 mm, and a height of 2 mm at a deposition rate of 30 Å/sec.

Preparation of coating layer

A coating layer was formed on the buffer layer in the same manner as in Experimental Example 1 described above.

Comparative example

A coating material was prepared in the same manner as Experimental Example 1 described above, except that a buffer layer was not formed.

Experiment result

XRD experiment results

XRD experiments were conducted on the coating materials prepared according to Experimental Example 1 and Experimental Example 2, respectively. That is, an XRD experiment was conducted to confirm whether the buffer layer included in the coating material was well formed.

Figure 8 shows an XRD experimental graph of the coating material according to Experimental Example 1 of the present invention, and Figure 9 shows an XRD experimental graph of the coating material according to Experimental Example 2 of the present invention.

As shown in Figures 8 and 9, multiple MgAl ₂ O ₄ peaks were observed. Therefore, it was confirmed that a buffer layer made of MgAl ₂ O ₄ was well formed inside the coating material.

Heat resistance test results

A heat resistance test was conducted on the coating material prepared according to Experimental Example 1 and the coating material prepared according to Comparative Example. The heat resistance test was conducted by repeating the process of heating the coating material from room temperature to 600°C 10 times.

Figure 10 shows photographs before and after the heat resistance evaluation experiment of the coating material according to Experimental Example 1. That is, the left and right sides of Figure 10 show a planar photograph of the coating material before and after the heat resistance evaluation experiment and a scanning electron microscope photograph of its cross section, respectively.

As shown in FIG. 10, it was confirmed that the AlN base material, MgAl ₂ O ₄ spinel buffer layer, and Y ₂ O ₃ coating layer were well adhered and maintained together even after the heat resistance evaluation experiment. In other words, it was confirmed that the MgAl ₂ O ₄ spinel buffer layer is located between the AlN base material and the Y ₂ O ₃ coating layer, which has a difference in thermal expansion coefficient, and acts as a buffer according to thermal expansion. As a result, it was confirmed that when the high-temperature heater to which the coating material according to Experimental Example 1 was applied was actually used, there was no possibility of particles being separated from the high-temperature heater by ensuring corrosion resistance to plasma, etc.

Figure 11 shows photographs before and after the heat resistance evaluation experiment of the coating material according to the comparative example. That is, the left and right sides of Figure 11 show a planar photograph of the coating material before and after the heat resistance evaluation experiment and a scanning electron microscope photograph of its cross section, respectively.

As shown in FIG. 11, it was confirmed from the photo after the heat resistance test on the right that cracks occurred between the AlN base material and the Y ₂ O ₃ coating layer. It was confirmed that cracks were generated as the AlN base material and Y ₂ O ₃ coating layer contracted and expanded due to the large difference in thermal expansion coefficient between the AlN base material and the Y ₂ O ₃ coating layer. As a result, it was confirmed that when a high-temperature heater using the coating material according to the comparative example is actually used, it is difficult to secure corrosion resistance against plasma, etc., and particles may be peeled off from the high-temperature heater.

Through Experimental Example 1 and Experimental Example 2, it was found that a coating material with excellent heat resistance could be manufactured due to the buffer layer. It was also confirmed that this coating material is suitable for use as a material for high-temperature heaters exposed to high-temperature environments.

Although the present invention has been described according to the foregoing description, those skilled in the art will easily understand that various modifications and variations are possible without departing from the concept and scope of the claims described below.

10. Coating material
100. High temperature heater
100a. heating element
101. Base material
103. Buffer layer
105. Coating layer
200. Support
300. Power
300a. ferry
400. Vacuum pump
500. Chamber body
1000. Process chamber equipment
S. Internal space
t103, t105. thickness
W. Wafer

Claims (12)

A method of manufacturing a coating material for a high temperature heater applied for use in a corrosive atmosphere in a process chamber, comprising:
Providing a base material for a high temperature heater,
Providing a buffer layer containing MgAl ₂ O _4-x (0<x≤0.2) on the base material,
Providing a coating layer containing Y ₂ O _3-z (0<z≤0.2) on the buffer layer, and
Heat treating the base material, the buffer layer, and the coating layer
A method of manufacturing a coating material comprising. In paragraph 1:
In the step of providing the coating layer, the coating layer is provided on the buffer layer by PVD (physical vapor deposition). In paragraph 2,
In the step of providing the buffer layer, the buffer layer is provided by physical vapor deposition (PVD), suspension plasma spray (SPS), or aerosol deposition (AD). . In paragraph 1:
In the step of providing the base material, the base material includes AlN. In paragraph 1:
In the heat treatment step, the heat treatment temperature is 600°C to 1000°C. In paragraph 1:
In the step of providing the buffer layer, x is greater than 0 and less than or equal to 0.1. In paragraph 1:
In the step of providing the coating layer, z is greater than 0 and less than or equal to 0.1. A coating material for a high temperature heater applied for use in a corrosive atmosphere within a chamber,
Base material for high temperature heater,
A buffer layer located on the base material and containing MgAl ₂ O ₄ spinel, and
A coating layer located on the buffer layer and containing Y ₂ O ₃
A coating material containing a. In paragraph 8:
The base material is a coating material containing AlN. In paragraph 8:
A coating material in which the thermal expansion coefficient of the coating layer is greater than that of the buffer layer, and the thermal expansion coefficient of the buffer layer is greater than the thermal expansion coefficient of the base material. In paragraph 10:
A coating material in which the difference between the thermal expansion coefficient of the base material and the buffer layer is smaller than the difference between the thermal expansion coefficient of the buffer layer and the coating layer. In paragraph 10:
A coating material wherein the difference between the thermal expansion coefficient of the base material and the buffer layer is 0.5ppm/K to 1ppm/K.