KR20240007066A - High molecular weight compound and organic electroluminescent device using same - Google Patents
High molecular weight compound and organic electroluminescent device using same Download PDFInfo
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- KR20240007066A KR20240007066A KR1020230078097A KR20230078097A KR20240007066A KR 20240007066 A KR20240007066 A KR 20240007066A KR 1020230078097 A KR1020230078097 A KR 1020230078097A KR 20230078097 A KR20230078097 A KR 20230078097A KR 20240007066 A KR20240007066 A KR 20240007066A
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- molecular weight
- high molecular
- weight compound
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- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 2
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- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
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- FOUNKDBOYUMWNP-UHFFFAOYSA-N 9-[4-[2-(4-carbazol-9-ylphenyl)-2-adamantyl]phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C(C=C1)=CC=C1C1(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C(C2)CC3CC1CC2C3 FOUNKDBOYUMWNP-UHFFFAOYSA-N 0.000 description 1
- GFEWJHOBOWFNRV-UHFFFAOYSA-N 9-[4-[9-(4-carbazol-9-ylphenyl)fluoren-9-yl]phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C(C=C1)=CC=C1C1(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C2=CC=CC=C2C2=CC=CC=C12 GFEWJHOBOWFNRV-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- UMCYTBCCHZRHDX-UHFFFAOYSA-N N,N-bis(4-bromophenyl)-9,9-dioctylfluoren-2-amine Chemical compound CCCCCCCCC1(CCCCCCCC)C2=CC=CC=C2C2=CC=C(C=C12)N(C1=CC=C(Br)C=C1)C1=CC=C(Br)C=C1 UMCYTBCCHZRHDX-UHFFFAOYSA-N 0.000 description 1
- KAMNOHFVJJOLMV-UHFFFAOYSA-N N,N-bis(4-bromophenyl)bicyclo[4.2.0]octa-1(6),2,4,7-tetraen-3-amine Chemical compound BrC1=CC=C(C=C1)N(C1=CC2=C(C=C2)C=C1)C1=CC=C(C=C1)Br KAMNOHFVJJOLMV-UHFFFAOYSA-N 0.000 description 1
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- 238000003848 UV Light-Curing Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FUHDUDFIRJUPIV-UHFFFAOYSA-N [4-[9-(4-carbazol-9-ylphenyl)fluoren-9-yl]phenyl]-triphenylsilane Chemical compound C1=CC=CC=C1[Si](C=1C=CC(=CC=1)C1(C2=CC=CC=C2C2=CC=CC=C21)C=1C=CC(=CC=1)N1C2=CC=CC=C2C2=CC=CC=C21)(C=1C=CC=CC=1)C1=CC=CC=C1 FUHDUDFIRJUPIV-UHFFFAOYSA-N 0.000 description 1
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- 125000003670 adamantan-2-yl group Chemical group [H]C1([H])C(C2([H])[H])([H])C([H])([H])C3([H])C([*])([H])C1([H])C([H])([H])C2([H])C3([H])[H] 0.000 description 1
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- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical class C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
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- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
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- 150000001718 carbodiimides Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 125000003113 cycloheptyloxy group Chemical group C1(CCCCCC1)O* 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
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- 125000004410 cyclooctyloxy group Chemical group C1(CCCCCCC1)O* 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001887 cyclopentyloxy group Chemical group C1(CCCC1)O* 0.000 description 1
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- 230000026030 halogenation Effects 0.000 description 1
- 238000005658 halogenation reaction Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
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- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- ANYCDYKKVZQRMR-UHFFFAOYSA-N lithium;quinoline Chemical compound [Li].N1=CC=CC2=CC=CC=C21 ANYCDYKKVZQRMR-UHFFFAOYSA-N 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
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- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 125000001298 n-hexoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
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- 125000003935 n-pentoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000004593 naphthyridinyl group Chemical group N1=C(C=CC2=CC=CN=C12)* 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000007978 oxazole derivatives Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- LXNAVEXFUKBNMK-UHFFFAOYSA-N palladium(II) acetate Substances [Pd].CC(O)=O.CC(O)=O LXNAVEXFUKBNMK-UHFFFAOYSA-N 0.000 description 1
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- XEXYATIPBLUGSF-UHFFFAOYSA-N phenanthro[9,10-b]pyridine-2,3,4,5,6,7-hexacarbonitrile Chemical group N1=C(C#N)C(C#N)=C(C#N)C2=C(C(C#N)=C(C(C#N)=C3)C#N)C3=C(C=CC=C3)C3=C21 XEXYATIPBLUGSF-UHFFFAOYSA-N 0.000 description 1
- 125000004625 phenanthrolinyl group Chemical group N1=C(C=CC2=CC=C3C=CC=NC3=C12)* 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- LISFMEBWQUVKPJ-UHFFFAOYSA-N quinolin-2-ol Chemical compound C1=CC=C2NC(=O)C=CC2=C1 LISFMEBWQUVKPJ-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical class [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- 150000007979 thiazole derivatives Chemical class 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- 125000003960 triphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C3=CC=CC=C3C12)* 0.000 description 1
- 229910000404 tripotassium phosphate Inorganic materials 0.000 description 1
- 235000019798 tripotassium phosphate Nutrition 0.000 description 1
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
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- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/121—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from organic halides
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- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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Abstract
(과제) 정공의 주입·수송 성능이 우수하고, 전자 저지 능력을 갖고, 박막 상태에서의 안정성이 높은 고분자 재료를 제공하는 것. 또, 상기 고분자 재료에 의해 형성된 유기층 (박막) 을 갖고 있고, 발광 효율이 높고, 장수명인 유기 EL 소자를 제공하는 것.
(해결 수단) 분자 주사슬에, 플루오렌 고리를 갖는 트리아릴아민 구조 단위와, 디벤조푸란 고리, 디벤조티오펜 고리 또는 카르바졸 고리를 갖는 트리아릴아민 구조 단위를 포함하는 고분자량 화합물이다. 상기 고분자량 화합물은, 분자 주사슬에 열가교성 구조 단위를 포함하는 것이 바람직하다.(Project) To provide a polymer material that has excellent hole injection and transport performance, has electron blocking ability, and is highly stable in a thin film state. Additionally, to provide an organic EL device that has an organic layer (thin film) formed of the polymer material, has high luminous efficiency, and has a long lifespan.
(Solution) It is a high molecular weight compound containing a triarylamine structural unit having a fluorene ring and a triarylamine structural unit having a dibenzofuran ring, dibenzothiophene ring, or carbazole ring in the molecular main chain. The high molecular weight compound preferably contains a thermally crosslinkable structural unit in the molecular main chain.
Description
본 발명은, 각종 표시 장치에 바람직한 자발광 소자인 유기 일렉트로 루미네선스 소자 (유기 EL 소자) 에 적합한 고분자량 화합물과 이들의 고분자량 화합물을 사용한 유기 EL 소자에 관한 것이다.The present invention relates to high molecular weight compounds suitable for organic electroluminescence devices (organic EL devices), which are self-luminous devices suitable for various display devices, and organic EL devices using these high molecular weight compounds.
유기 EL 소자는 자기 발광성 소자이기 때문에, 액정 소자에 비해 밝아 시인성이 우수하고, 선명한 표시가 가능하기 때문에, 활발한 연구가 이루어져 왔다.Because organic EL devices are self-luminous devices, they are brighter than liquid crystal devices, have excellent visibility, and enable clear displays, so active research has been conducted on them.
유기 EL 소자는, 유기 화합물의 박막 (유기층) 을, 양극과 음극에 협지한 구성을 갖고 있다. 박막의 형성 방법으로는, 진공 증착법과 도포법으로 크게 구별된다. 진공 증착법은, 주로 저분자 화합물을 사용하고, 진공 중에서 기판 위에 박막을 형성하는 수법으로서, 이미 실용화되어 있는 기술이다. 한편, 도포법은, 주로 고분자 화합물을 사용하고, 잉크젯이나 인쇄 등, 용액을 사용하여 기판 위에 박막을 형성하는 수법으로서, 재료의 사용 효율이 높고, 대면적화, 고정세화에 적합하여, 향후의 대면적 유기 EL 디스플레이에는 불가결한 기술이다.Organic EL elements have a structure in which a thin film (organic layer) of an organic compound is sandwiched between an anode and a cathode. Methods for forming thin films are broadly divided into vacuum deposition and coating methods. Vacuum deposition is a technique that mainly uses low-molecular-weight compounds to form a thin film on a substrate in a vacuum, and is a technology that has already been put into practical use. On the other hand, the coating method mainly uses polymer compounds and is a method of forming a thin film on a substrate using a solution such as inkjet or printing. It has high material use efficiency, is suitable for large areas and high definition, and is expected to be used in the future. It is an essential technology for area organic EL displays.
저분자 재료를 사용한 진공 증착법은, 재료의 사용 효율이 극단적으로 낮고, 대형화하면 섀도 마스크의 휨이 커져, 대형 기판에 대한 균일한 증착은 곤란해진다. 또 제조 비용도 높아진다는 문제도 떠안고 있다.The vacuum deposition method using low-molecular materials has extremely low material usage efficiency, and when enlarged, the warpage of the shadow mask increases, making uniform deposition on a large substrate difficult. It also faces the problem of increased manufacturing costs.
한편, 고분자 재료는, 유기 용제에 용해시킨 그 용액을 도포함으로써, 대형 기판에서도 균일한 막을 형성하는 것이 가능하고, 이것을 이용하여 잉크젯법이나 인쇄법으로 대표되는 도포법을 사용할 수 있다. 그 때문에, 재료의 사용 효율을 높이는 것이 가능해지고, 소자 제조에 드는 제조 비용을 대폭 삭감할 수 있다.On the other hand, polymer materials can form a uniform film even on large-sized substrates by applying a solution dissolved in an organic solvent, and coating methods such as inkjet or printing can be used to utilize this. Therefore, it becomes possible to increase the efficiency of material use, and the manufacturing cost for device manufacturing can be significantly reduced.
지금까지 고분자 재료를 사용한 유기 EL 소자가 다양하게 검토되어 왔지만, 발광 효율이나 수명 등의 소자 특성은 반드시 충분한 것은 아니라는 문제가 있었다 (예를 들어, 특허문헌 1 ∼ 특허문헌 5 참조).Until now, various organic EL devices using polymer materials have been examined, but there has been a problem that device characteristics such as luminous efficiency and lifespan are not necessarily sufficient (for example, see Patent Document 1 to Patent Document 5).
또, 지금까지 고분자 재료를 사용한 유기 EL 소자에 있어서의 대표적인 정공 수송 재료로는, TFB 로 불리는 플루오렌 폴리머가 알려져 있었다 (특허문헌 6 ∼ 특허문헌 7 참조). 그러나, TFB 는 정공 수송성이 불충분하고, 또한 전자 저지성도 불충분하기 때문에, 전자의 일부가 발광층을 빠져나가 버려, 발광 효율의 향상을 기대할 수 없다는 문제가 있었다. 또, 인접층과의 막 밀착성이 낮은 점에서, 소자의 장수명화도 기대할 수 없다는 문제가 있었다.In addition, a fluorene polymer called TFB has been known so far as a representative hole transport material in organic EL devices using polymer materials (see Patent Document 6 to Patent Document 7). However, since TFB had insufficient hole transport properties and insufficient electron blocking properties, there was a problem in that some electrons escaped the light emitting layer and no improvement in luminous efficiency could be expected. In addition, since film adhesion to adjacent layers was low, there was a problem that longer life of the device could not be expected.
본 발명의 목적은, 정공의 주입·수송 성능이 우수하고, 전자 저지 능력을 갖고, 박막 상태에서의 안정성이 높은 고분자 재료를 제공하는 것에 있다. 또한, 상기 고분자 재료에 의해 형성된 유기층 (박막) 을 갖고 있고, 발광 효율이 높고, 장수명인 유기 EL 소자를 제공하는 것에 있다.The purpose of the present invention is to provide a polymer material that has excellent hole injection and transport performance, has electron blocking ability, and is highly stable in a thin film state. Additionally, the object is to provide an organic EL device that has an organic layer (thin film) formed of the polymer material, has high luminous efficiency, and has a long lifespan.
본 발명자들은, 분자 주사슬에 플루오렌 고리를 갖는 트리아릴아민 구조 단위를 포함하는 고분자량 화합물이 높은 정공 주입·수송 능력을 갖고, 또한 와이드 갭화도 기대할 수 있는 것에 주목하여, 다양한 트리아릴아민 구조 단위를 포함하는 고분자량 화합물을 합성하여 검토한 결과, 본 발명을 완성하기에 이르렀다.The present inventors focused on the fact that high molecular weight compounds containing a triarylamine structural unit having a fluorene ring in the molecular main chain have high hole injection and transport capabilities and can also be expected to form a wide gap, and have developed various triarylamine structures. As a result of synthesizing and examining high molecular weight compounds containing units, the present invention was completed.
즉, 본 발명은 이하에 기재하는 바와 같다.That is, the present invention is as described below.
[1] 하기 일반식 (1) 로 나타내는 반복 단위 A, 및 하기 일반식 (2) 로 나타내는 반복 단위 B 를 포함하고, 폴리스티렌 환산으로 10,000 이상 1,000,000 미만의 중량 평균 분자량을 갖고 있는 고분자량 화합물.[1] A high molecular weight compound comprising a repeating unit A represented by the following general formula (1) and a repeating unit B represented by the following general formula (2), and having a weight average molecular weight of 10,000 or more and less than 1,000,000 in terms of polystyrene.
식 중,During the ceremony,
R1 및 R3 은, 각각 독립적으로, 수소 원자, 중수소 원자, 시아노기, 니트로기, 할로겐 원자, 또는 탄소수가 40 이하인, 알킬기, 알킬옥시기, 시클로알킬기, 시클로알킬옥시기, 알케닐기, 혹은 아릴옥시기를 나타낸다.R 1 and R 3 are each independently a hydrogen atom, a deuterium atom, a cyano group, a nitro group, a halogen atom, or an alkyl group, an alkyloxy group, a cycloalkyl group, a cycloalkyloxy group, an alkenyl group, or an alkyl group having 40 or less carbon atoms. Represents an aryloxy group.
a, b 및 c 는, 이하의 정수이다.a, b and c are the following integers.
a = 0, 1, 2 또는 3a = 0, 1, 2 or 3
b = 0, 1, 2, 3 또는 4b = 0, 1, 2, 3 or 4
c = 0 또는 1c = 0 or 1
R2 는, 각각 독립적으로, 탄소수가 3 ∼ 40 인, 알킬기, 알킬옥시기, 또는 시클로알킬기를 나타낸다.R 2 each independently represents an alkyl group, an alkyloxy group, or a cycloalkyl group having 3 to 40 carbon atoms.
L 은, 페닐렌기를 나타내고, n 은 0 ∼ 3 의 정수를 나타낸다.L represents a phenylene group, and n represents an integer of 0 to 3.
X 는, 각각 독립적으로, 수소 원자, 아미노기, 1 가의 아릴기, 또는 1 가의 헤테로아릴기를 나타낸다.X each independently represents a hydrogen atom, an amino group, a monovalent aryl group, or a monovalent heteroaryl group.
Y 는, 산소 원자 (O), 황 원자 (S), 또는 하기 식 (3) 으로 나타내는 기이다.Y is an oxygen atom (O), a sulfur atom (S), or a group represented by the following formula (3).
식 중의 R4 는, 치환 혹은 무치환의 아릴기, 또는 치환 혹은 무치환의 알킬기를 나타낸다.R 4 in the formula represents a substituted or unsubstituted aryl group or a substituted or unsubstituted alkyl group.
[2] 상기 일반식 (1) 및 (2) 에 있어서, R1 및 R3 이 수소 원자인 [1] 에 기재된 고분자량 화합물.[2] The high molecular weight compound according to [1], wherein in the general formulas (1) and (2), R 1 and R 3 are hydrogen atoms.
[3] 상기 일반식 (1) 에 있어서, R2 가 탄소수 3 ∼ 40 의 알킬기인 [1] 또는 [2] 에 기재된 고분자량 화합물.[3] The high molecular weight compound according to [1] or [2], wherein in the general formula (1), R 2 is an alkyl group having 3 to 40 carbon atoms.
[4] 상기 일반식 (1) 및 (2) 에 있어서, X 가 디페닐아미노기, 페닐기, 나프틸기, 디벤조푸라닐기, 디벤조티에닐기, 페난트레닐기, 플루오레닐기, 카르바졸릴기, 인데노카르바졸릴기, 또는 아크리디닐기인 [1] 또는 [2] 에 기재된 고분자량 화합물.[4] In the above general formulas (1) and (2), The high molecular weight compound according to [1] or [2], which is an indenocarbazolyl group or an acridinyl group.
[5] 하기 일반식 (4) 로 나타내는, 열가교성 구조 단위 Q 를 갖는 반복 단위를 포함하는 [1] 또는 [2] 에 기재된 고분자량 화합물.[5] A high molecular weight compound according to [1] or [2], comprising a repeating unit having a thermally crosslinkable structural unit Q represented by the following general formula (4).
식 중,During the ceremony,
R3, X 및 a 는, 모두 일반식 (1) 에서 나타낸 것과 동일한 정의이다.R 3 , X and a all have the same definition as shown in General Formula (1).
[6] 상기 일반식 (4) 에 있어서, 열가교성 구조 단위 Q 가, 하기 일반식 (5a) ∼ (5af) 에 나타내는 구조인 [5] 에 기재된 고분자량 화합물.[6] The high molecular weight compound according to [5], wherein in the general formula (4), the heat crosslinkable structural unit Q is a structure represented by the following general formulas (5a) to (5af).
상기 일반식 (5a) ∼ (5af) 중의 R1, R2, a 및 b 는, 모두 일반식 (1) 에서 나타낸 것과 동일한 정의이다.R 1 , R 2 , a and b in the above general formulas (5a) to (5af) all have the same definitions as those shown in general formula (1).
[7] 1 쌍의 전극과 그 사이에 협지된 유기층을 갖는 유기 일렉트로 루미네선스 소자에 있어서, 상기 유기층이 [1] 또는 [2] 에 기재된 고분자량 화합물을 구성 재료로서 사용한 것인 유기 일렉트로 루미네선스 소자.[7] An organic electroluminescence device having a pair of electrodes and an organic layer sandwiched between them, wherein the organic layer uses the high molecular weight compound according to [1] or [2] as a constituent material. Nesence element.
[8] 상기 유기층이 정공 수송층인, [7] 에 기재된 유기 일렉트로 루미네선스 소자.[8] The organic electroluminescence device according to [7], wherein the organic layer is a hole transport layer.
[9] 상기 유기층이 전자 저지층인, [7] 에 기재된 유기 일렉트로 루미네선스 소자.[9] The organic electroluminescence device according to [7], wherein the organic layer is an electron blocking layer.
[10] 상기 유기층이 정공 주입층인, [7] 에 기재된 유기 일렉트로 루미네선스 소자.[10] The organic electroluminescence device according to [7], wherein the organic layer is a hole injection layer.
[11] 상기 유기층이 발광층인, [7] 에 기재된 유기 일렉트로 루미네선스 소자.[11] The organic electroluminescence device according to [7], wherein the organic layer is a light-emitting layer.
상기 서술한 본 발명의 고분자량 화합물은,The high molecular weight compound of the present invention described above is,
(1) 정공의 주입 특성이 양호하고,(1) Good hole injection characteristics,
(2) 정공의 이동도가 크고,(2) The mobility of holes is large,
(3) 와이드 갭이고, 전자 저지 능력이 우수하다는(3) Wide gap and excellent electromagnetic blocking ability
특성을 갖고 있다.It has characteristics.
이와 같은 고분자량 화합물에 의해 형성된 유기층은, 정공 수송층, 전자 저지층, 정공 주입층 또는 발광층으로서 사용하는 것이 바람직하고, 상기 유기층을 사용한 유기 EL 소자는,The organic layer formed of such a high molecular weight compound is preferably used as a hole transport layer, an electron blocking layer, a hole injection layer, or a light emitting layer, and an organic EL device using the organic layer is,
(1) 발광 효율 및 전력 효율이 높고,(1) High luminous efficiency and power efficiency,
(2) 실용 구동 전압이 낮고,(2) the practical driving voltage is low;
(3) 장수명이라는(3) Long life
이점을 갖고 있다.It has an advantage.
즉, 본 발명의 고분자량 화합물은, 정공 수송 능력이 높고, 전자 저지 능력이 우수하기 때문에, 도포형 유기 EL 소자용의 화합물로서 우수하다. 그 화합물을 사용하여 도포형 유기 EL 소자를 제작함으로써, 높은 발광 효율 및 전력 효율을 얻을 수 있음과 함께, 내구성을 개선시킬 수 있다.That is, the high molecular weight compound of the present invention has a high hole transport ability and an excellent electron blocking ability, and is therefore excellent as a compound for application-type organic EL devices. By producing a coating-type organic EL device using the compound, high luminous efficiency and power efficiency can be obtained, and durability can be improved.
도 1 은, 본 발명의 일반식 (1) 로 나타내는 반복 단위 A 로서 바람직한 반복 단위 1-1 ∼ 1-6 의 화학 구조
도 2 는, 본 발명의 일반식 (1) 로 나타내는 반복 단위 A 로서 바람직한 반복 단위 1-7 ∼ 1-12 의 화학 구조
도 3 은, 본 발명의 일반식 (1) 로 나타내는 반복 단위 A 로서 바람직한 반복 단위 1-13 ∼ 1-18 의 화학 구조
도 4 는, 본 발명의 일반식 (1) 로 나타내는 반복 단위 A 로서 바람직한 반복 단위 1-19 ∼ 1-24 의 화학 구조
도 5 는, 본 발명의 일반식 (1) 로 나타내는 반복 단위 A 로서 바람직한 반복 단위 1-25 ∼ 1-28 의 화학 구조
도 6 은, 본 발명의 일반식 (2) 로 나타내는 반복 단위 B 로서 바람직한 반복 단위 2-1 ∼ 2-6 의 화학 구조
도 7 은, 본 발명의 일반식 (2) 로 나타내는 반복 단위 B 로서 바람직한 반복 단위 2-7 ∼ 2-12 의 화학 구조
도 8 은, 본 발명의 일반식 (2) 로 나타내는 반복 단위 B 로서 바람직한 반복 단위 2-13 ∼ 2-18 의 화학 구조
도 9 는, 본 발명의 일반식 (2) 로 나타내는 반복 단위 B 로서 바람직한 반복 단위 2-19 ∼ 2-24 의 화학 구조
도 10 은, 본 발명의 일반식 (2) 로 나타내는 반복 단위 B 로서 바람직한 반복 단위 2-25 ∼ 2-30 의 화학 구조
도 11 은, 본 발명의 일반식 (2) 로 나타내는 반복 단위 B 로서 바람직한 반복 단위 2-31 ∼ 2-36 의 화학 구조
도 12 는, 본 발명의 일반식 (2) 로 나타내는 반복 단위 B 로서 바람직한 반복 단위 2-37 ∼ 2-42 의 화학 구조
도 13 은, 본 발명의 일반식 (2) 로 나타내는 반복 단위 B 로서 바람직한 반복 단위 2-43 ∼ 2-48 의 화학 구조
도 14 는, 본 발명의 일반식 (2) 로 나타내는 반복 단위 B 로서 바람직한 반복 단위 2-49 ∼ 2-54 의 화학 구조
도 15 는, 본 발명의 일반식 (2) 로 나타내는 반복 단위 B 로서 바람직한 반복 단위 2-55 ∼ 2-60 의 화학 구조
도 16 은, 본 발명의 일반식 (2) 로 나타내는 반복 단위 B 로서 바람직한 반복 단위 2-61 ∼ 2-66 의 화학 구조
도 17 은, 본 발명의 일반식 (2) 로 나타내는 반복 단위 B 로서 바람직한 반복 단위 2-67 ∼ 2-68 의 화학 구조
도 18 은, 본 발명에 있어서, 일반식 (1), 일반식 (2) 및 일반식 (4) 중의 X 로서 바람직한 치환기 1 ∼ 24 의 화학 구조
도 19 는, 본 발명에 있어서, 일반식 (1), 일반식 (2) 및 일반식 (4) 중의 X 로서 바람직한 치환기 25 ∼ 48 의 화학 구조
도 20 은, 본 발명의 유기 EL 소자의 층 구성의 예
도 21 은, 실시예 1 의 고분자량 화합물 I 의 1H-NMR 차트1 shows the chemical structure of preferred repeating units 1-1 to 1-6 as repeating unit A represented by general formula (1) of the present invention.
Figure 2 shows the chemical structure of preferred repeating units 1-7 to 1-12 as repeating unit A represented by general formula (1) of the present invention.
Figure 3 shows the chemical structure of preferred repeating units 1-13 to 1-18 as repeating unit A represented by general formula (1) of the present invention.
Figure 4 shows the chemical structure of preferred repeating units 1-19 to 1-24 as repeating unit A represented by general formula (1) of the present invention.
Figure 5 shows the chemical structure of preferred repeating units 1-25 to 1-28 as repeating unit A represented by general formula (1) of the present invention.
Figure 6 shows the chemical structure of preferred repeating units 2-1 to 2-6 as repeating unit B represented by general formula (2) of the present invention.
Figure 7 shows the chemical structure of preferred repeating units 2-7 to 2-12 as repeating unit B represented by general formula (2) of the present invention.
Figure 8 shows the chemical structure of repeating units 2-13 to 2-18 preferred as repeating unit B represented by general formula (2) of the present invention.
Figure 9 shows the chemical structure of repeating units 2-19 to 2-24 preferred as repeating unit B represented by general formula (2) of the present invention.
Figure 10 shows the chemical structure of preferred repeating units 2-25 to 2-30 as repeating unit B represented by general formula (2) of the present invention.
Figure 11 shows the chemical structure of preferred repeating units 2-31 to 2-36 as repeating unit B represented by general formula (2) of the present invention.
Figure 12 shows the chemical structure of repeating units 2-37 to 2-42 preferred as repeating unit B represented by general formula (2) of the present invention.
Figure 13 shows the chemical structure of preferred repeating units 2-43 to 2-48 as repeating unit B represented by general formula (2) of the present invention.
Figure 14 shows the chemical structure of repeating units 2-49 to 2-54 preferred as repeating unit B represented by general formula (2) of the present invention.
Figure 15 shows the chemical structure of preferred repeating units 2-55 to 2-60 as repeating unit B represented by general formula (2) of the present invention.
Figure 16 shows the chemical structure of repeating units 2-61 to 2-66 preferred as repeating unit B represented by general formula (2) of the present invention.
Figure 17 shows the chemical structure of repeating units 2-67 to 2-68, which are preferred as repeating unit B represented by general formula (2) of the present invention.
Figure 18 shows the chemical structures of substituents 1 to 24 preferred as X in formulas (1), (2), and (4) in the present invention.
Figure 19 shows the chemical structures of substituents 25 to 48 preferred as X in formulas (1), (2), and (4) in the present invention.
Figure 20 is an example of the layer structure of the organic EL device of the present invention.
Figure 21 is a 1 H-NMR chart of high molecular weight compound I of Example 1.
<반복 단위 A 및 반복 단위 B><Repetition Unit A and Repetition Unit B>
본 발명의 고분자량 화합물은, 하기 일반식 (1) 로 나타내는 반복 단위 A, 및 하기 일반식 (2) 로 나타내는 반복 단위 B 를 포함한다.The high molecular weight compound of the present invention includes a repeating unit A represented by the following general formula (1), and a repeating unit B represented by the following general formula (2).
식 중,During the ceremony,
R1 및 R3 은, 각각 독립적으로, 수소 원자, 중수소 원자, 시아노기, 니트로기, 할로겐 원자, 또는 탄소수가 40 이하인, 알킬기, 알킬옥시기, 시클로알킬기, 시클로알킬옥시기, 알케닐기, 혹은 아릴옥시기를 나타낸다.R 1 and R 3 are each independently a hydrogen atom, a deuterium atom, a cyano group, a nitro group, a halogen atom, or an alkyl group, an alkyloxy group, a cycloalkyl group, a cycloalkyloxy group, an alkenyl group, or an alkyl group having 40 or less carbon atoms. Represents an aryloxy group.
a, b 및 c 는, 이하의 정수이다.a, b and c are the following integers.
a = 0, 1, 2 또는 3a = 0, 1, 2 or 3
b = 0, 1, 2, 3 또는 4b = 0, 1, 2, 3 or 4
c = 0 또는 1c = 0 or 1
R2 는, 각각 독립적으로, 탄소수가 3 ∼ 40 인, 알킬기, 알킬옥시기, 또는 시클로알킬기를 나타낸다.R 2 each independently represents an alkyl group, an alkyloxy group, or a cycloalkyl group having 3 to 40 carbon atoms.
L 은, 페닐렌기를 나타내고, n 은 0 ∼ 3 의 정수를 나타낸다.L represents a phenylene group, and n represents an integer of 0 to 3.
X 는, 각각 독립적으로, 수소 원자, 아미노기, 1 가의 아릴기, 또는 1 가의 헤테로아릴기를 나타낸다.X each independently represents a hydrogen atom, an amino group, a monovalent aryl group, or a monovalent heteroaryl group.
Y 는, 산소 원자 (O), 황 원자 (S), 또는 하기 식 (3) 으로 나타내는 기이다.Y is an oxygen atom (O), a sulfur atom (S), or a group represented by the following formula (3).
식 중의 R4 는, 치환 혹은 무치환의 아릴기, 또는 치환 혹은 무치환의 알킬기를 나타낸다.R 4 in the formula represents a substituted or unsubstituted aryl group or a substituted or unsubstituted alkyl group.
상기 일반식 (1) 및 (2) 중의 R1 및 R3 으로 나타내는 할로겐 원자로는, 불소 원자, 염소 원자, 브롬 원자 및 요오드 원자 등을 들 수 있다.Halogen atoms represented by R 1 and R 3 in the general formulas (1) and (2) include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
상기 R1 및 R3 으로 나타내는, 탄소수가 40 이하인, 알킬기, 알킬옥시기, 시클로알킬기, 시클로알킬옥시기, 알케닐기, 및 아릴옥시기로는, 각각, 탄소수 1 ∼ 8 의 알킬기, 탄소수 1 ∼ 8 의 알킬옥시기, 탄소수 5 ∼ 10 의 시클로알킬기, 탄소수 5 ∼ 10 의 시클로알킬옥시기, 탄소수 2 ∼ 6 의 알케닐기, 및 탄소수 6 ∼ 10 의 아릴옥시기가 바람직하다.The alkyl group, alkyloxy group, cycloalkyl group, cycloalkyloxy group, alkenyl group, and aryloxy group having 40 or less carbon atoms represented by R 1 and R 3 are, respectively, an alkyl group with 1 to 8 carbon atoms and an aryloxy group with 1 to 8 carbon atoms. An alkyloxy group, a cycloalkyl group with 5 to 10 carbon atoms, a cycloalkyloxy group with 5 to 10 carbon atoms, an alkenyl group with 2 to 6 carbon atoms, and an aryloxy group with 6 to 10 carbon atoms are preferable.
상기의 알킬기, 알킬옥시기, 시클로알킬기, 시클로알킬옥시기, 알케닐기, 및 아릴옥시기로는, 이하의 기를 예시할 수 있다.The following groups can be exemplified as the alkyl group, alkyloxy group, cycloalkyl group, cycloalkyloxy group, alkenyl group, and aryloxy group.
알킬기 (탄소수가 1 ∼ 8) ; 메틸기, 에틸기, n-프로필기, 이소프로필기, n-부틸기, 이소부틸기, tert-부틸기, n-펜틸기, 이소펜틸기, 네오펜틸기, n-헥실기, 이소헥실기, 네오헥실기, n-헵틸기, 이소헵틸기, 네오헵틸기, n-옥틸기, 이소옥틸기, 네오옥틸기 등.Alkyl group (carbon number: 1 to 8); Methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, n-pentyl group, isopentyl group, neopentyl group, n-hexyl group, isohexyl group, neo Hexyl group, n-heptyl group, isoheptyl group, neoheptyl group, n-octyl group, isooctyl group, neooctyl group, etc.
알킬옥시기 (탄소수가 1 ∼ 8) ; 메틸옥시기, 에틸옥시기, n-프로필옥시기, 이소프로필옥시기, n-부틸옥시기, tert-부틸옥시기, n-펜틸옥시기, n-헥실옥시기, n-헵틸옥시기, n-옥틸옥시기 등.Alkyloxy group (carbon number: 1 to 8); Methyloxy group, ethyloxy group, n-propyloxy group, isopropyloxy group, n-butyloxy group, tert-butyloxy group, n-pentyloxy group, n-hexyloxy group, n-heptyloxy group, n -Octyloxy group, etc.
시클로알킬기 (탄소수가 5 ∼ 10) ; 시클로펜틸기, 시클로헥실기, 1-아다만틸기, 2-아다만틸기 등.Cycloalkyl group (carbon number: 5 to 10); Cyclopentyl group, cyclohexyl group, 1-adamantyl group, 2-adamantyl group, etc.
시클로알킬옥시기 (탄소수가 5 ∼ 10) ; 시클로펜틸옥시기, 시클로헥실옥시기, 시클로헵틸옥시기, 시클로옥틸옥시기, 1-아다만틸옥시기, 2-아다만틸옥시기 등.Cycloalkyloxy group (carbon number: 5 to 10); Cyclopentyloxy group, cyclohexyloxy group, cycloheptyloxy group, cyclooctyloxy group, 1-adamantyloxy group, 2-adamantyloxy group, etc.
알케닐기 (탄소수가 2 ∼ 6) ; 비닐기, 알릴기, 이소프로페닐기, 2-부테닐기 등.Alkenyl group (carbon number: 2 to 6); Vinyl group, allyl group, isopropenyl group, 2-butenyl group, etc.
아릴옥시기 (탄소수가 6 ∼ 10) ; 페닐옥시기, 톨릴옥시기 등.Aryloxy group (carbon number: 6 to 10); Phenyloxy group, tolyloxy group, etc.
본 발명의 고분자량 화합물에 있어서는, 합성이 용이하기 때문에, 상기 일반식 (1) 중의 R3 과 상기 일반식 (2) 중의 R3 이 동일한 기인 것이 바람직하다.In the high molecular weight compound of the present invention, since synthesis is easy, it is preferable that R 3 in the general formula (1) and R 3 in the general formula (2) are the same group.
또, 상기 일반식 (1) 및 (2) 중의 R1 및 R3 이 모두 수소 원자인 것이 바람직하다.Moreover, it is preferable that both R 1 and R 3 in the general formulas (1) and (2) are hydrogen atoms.
상기 일반식 (1) 중의 R2 로 나타내는, 탄소수 3 ∼ 40 인 알킬기, 알킬옥시기, 및 시클로알킬기의 예로는, 상기 서술한 기와 동일한 기를 들 수 있다.Examples of the alkyl group, alkyloxy group, and cycloalkyl group having 3 to 40 carbon atoms represented by R 2 in the general formula (1) include the same groups as the above-mentioned groups.
본 발명의 고분자량 화합물에 있어서는, 용해성을 높이기 위해서, R2 가 탄소수 3 ∼ 40 의 알킬기인 것이 바람직하고, 탄소수 3 ∼ 10 의 알킬기인 것이 보다 바람직하고, n-헥실기 또는 n-옥틸기인 것이 가장 바람직하다.In the high molecular weight compound of the present invention, in order to increase solubility, R 2 is preferably an alkyl group with 3 to 40 carbon atoms, more preferably an alkyl group with 3 to 10 carbon atoms, and n-hexyl or n-octyl group. Most desirable.
상기 일반식 (1) 및 (2) 중의 X 로 나타내는 1 가의 아릴기, 및 1 가의 헤테로아릴기로는, 이하의 기를 예시할 수 있다.Examples of the monovalent aryl group and monovalent heteroaryl group represented by X in the general formulas (1) and (2) include the following groups.
아릴기 ; 페닐기, 나프틸기, 안트라세닐기, 페난트레닐기, 플루오레닐기, 인데닐기, 피레닐기, 페릴레닐기, 플루오란테닐기 등.Aryl group; Phenyl group, naphthyl group, anthracenyl group, phenanthrenyl group, fluorenyl group, indenyl group, pyrenyl group, perylenyl group, fluoranthenyl group, etc.
헤테로아릴기 : 피리딜기, 피리미디닐기, 트리아지닐기, 푸릴기, 피롤릴기, 티에닐기, 퀴놀릴기, 이소퀴놀릴기, 벤조푸라닐기, 벤조티에닐기, 인돌릴기, 카르바졸릴기, 인데노카르바졸릴기, 벤조옥사졸릴기, 벤조티아졸릴기, 퀴녹살리닐기, 벤조이미다졸릴기, 피라졸릴기, 디벤조푸라닐기, 디벤조티에닐기, 나프티리디닐기, 페난트롤리닐기, 아크리디닐기, 카르볼리닐기 등.Heteroaryl group: pyridyl group, pyrimidinyl group, triazinyl group, furyl group, pyrrolyl group, thienyl group, quinolyl group, isoquinolyl group, benzofuranyl group, benzothienyl group, indolyl group, carbazolyl group, and Nocarbazolyl group, benzoxazolyl group, benzothiazolyl group, quinoxalinyl group, benzoimidazolyl group, pyrazolyl group, dibenzofuranyl group, dibenzothienyl group, naphthyridinyl group, phenanthrolinyl group, acridi Nyl group, carbolinyl group, etc.
또, 상기의 아미노기, 아릴기 및 헤테로아릴기는, 치환기를 갖고 있어도 된다. 치환기로는, 중수소 원자, 시아노기, 니트로기 등에 더해 이하의 기를 들 수 있다.In addition, the above-mentioned amino group, aryl group, and heteroaryl group may have a substituent. Substituents include the following groups in addition to deuterium atoms, cyano groups, nitro groups, etc.
할로겐 원자, 예를 들어, 불소 원자, 염소 원자, 브롬 원자, 요오드 원자 ; Halogen atoms, such as fluorine atom, chlorine atom, bromine atom, iodine atom;
알킬기, 특히 탄소수가 1 ∼ 8 인 것, 예를 들어, 메틸기, 에틸기, n-프로필기, 이소프로필기, n-부틸기, 이소부틸기, tert-부틸기, n-펜틸기, 이소펜틸기, 네오펜틸기, n-헥실기, 이소헥실기, 네오헥실기, n-헵틸기, 이소헵틸기, 네오헵틸기, n-옥틸기, 이소옥틸기, 네오옥틸기 ; Alkyl groups, especially those having 1 to 8 carbon atoms, for example, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, n-pentyl group, isopentyl group , neopentyl group, n-hexyl group, isohexyl group, neohexyl group, n-heptyl group, isoheptyl group, neoheptyl group, n-octyl group, isooctyl group, neooctyl group;
알킬옥시기, 특히 탄소수 1 ∼ 8 인 것, 예를 들어, 메틸옥시기, 에틸옥시기, 프로필옥시기 ; Alkyloxy groups, especially those having 1 to 8 carbon atoms, such as methyloxy group, ethyloxy group, and propyloxy group;
알케닐기, 예를 들어, 비닐기, 알릴기 ; Alkenyl group, such as vinyl group, allyl group;
아릴옥시기, 예를 들어, 페닐옥시기, 톨릴옥시기 ; Aryloxy group, such as phenyloxy group, tolyloxy group;
아릴기, 예를 들어, 페닐기, 비페닐릴기, 터페닐릴기, 나프틸기, 안트라세닐기, 페난트레닐기, 플루오레닐기, 인데닐기, 피레닐기, 페릴레닐기, 플루오란테닐기, 트리페닐레닐기 ; Aryl groups, such as phenyl group, biphenylyl group, terphenylyl group, naphthyl group, anthracenyl group, phenanthrenyl group, fluorenyl group, indenyl group, pyrenyl group, perylenyl group, fluoranthenyl group, triphenyl group Nilgi ;
헤테로아릴기, 예를 들어, 피리딜기, 피리미디닐기, 트리아지닐기, 티에닐기, 푸릴기, 피롤릴기, 퀴놀릴기, 이소퀴놀릴기, 벤조푸라닐기, 벤조티에닐기, 인돌릴기, 카르바졸릴기, 인데노카르바졸릴기, 벤조옥사졸릴기, 벤조티아졸릴기, 퀴녹살리닐기, 벤조이미다졸릴기, 피라졸릴기, 디벤조푸라닐기, 디벤조티에닐기, 카르볼리닐기 ; Heteroaryl groups, such as pyridyl group, pyrimidinyl group, triazinyl group, thienyl group, furyl group, pyrrolyl group, quinolyl group, isoquinolyl group, benzofuranyl group, benzothienyl group, indolyl group, carbamate Zolyl group, indenocarbazolyl group, benzoxazolyl group, benzothiazolyl group, quinoxalinyl group, benzoimidazolyl group, pyrazolyl group, dibenzofuranyl group, dibenzothienyl group, carbolinyl group;
아릴비닐기, 예를 들어, 스티릴기, 나프틸비닐기 ; Arylvinyl group, such as styryl group, naphthylvinyl group;
아실기, 예를 들어, 아세틸기, 벤조일기.Acyl groups, such as acetyl groups and benzoyl groups.
또, 이들의 치환기는, 상기에서 예시한 치환기를 추가로 갖고 있어도 된다.Moreover, these substituents may further have the substituents exemplified above.
또한 이들의 치환기는, 각각 독립적으로 존재하고 있는 것이 바람직하지만, 이들의 치환기끼리가, 단결합, 치환기를 갖고 있어도 되는 메틸렌기, 산소 원자 또는 황 원자를 개재하여, 서로 결합하여 고리를 형성하고 있어도 된다.In addition, it is preferable that these substituents exist independently, but even if these substituents are bonded to each other through a single bond, a methylene group that may have a substituent, an oxygen atom, or a sulfur atom, they form a ring. do.
예를 들어, 상기의 아릴기나 헤테로아릴기는, 치환기로서 페닐기를 갖고 있어도 되고, 이 페닐기는, 추가로 치환기로서 페닐기를 갖고 있어도 된다. 즉, 아릴기를 예로 취하면, 이 아릴기는, 비페닐릴기, 터페닐릴기, 트리페닐레닐기여도 된다.For example, the above-mentioned aryl group or heteroaryl group may have a phenyl group as a substituent, and this phenyl group may further have a phenyl group as a substituent. That is, taking an aryl group as an example, this aryl group may be a biphenylyl group, terphenylyl group, or triphenylenyl group.
본 발명의 고분자량 화합물에 있어서는, 합성이 용이하기 때문에, 상기 일반식 (1) 중의 X 와 상기 일반식 (2) 중의 X 가 동일한 기인 것이 바람직하고, X 가 모두 수소 원자인 것이 보다 바람직하다.In the high molecular weight compound of the present invention, because it is easy to synthesize, it is preferable that X in the general formula (1) and X in the general formula (2) are the same group, and it is more preferable that all
상기 일반식 (1) 중의 L 로 나타내는 페닐렌기는, 치환기를 갖고 있어도 된다. 치환기로는, 상기 서술한 X 가 갖고 있어도 되는 치환기와 동일한 기를 들 수 있고, 이들의 치환기는 추가로 치환기를 갖고 있어도 된다.The phenylene group represented by L in the above general formula (1) may have a substituent. The substituent includes the same groups as the substituents that X may have as described above, and these substituents may further have a substituent.
상기 일반식 (1) 중의 n 은 L 의 수를 나타낸다. 본 발명의 고분자량 화합물에 있어서는, 정공의 주입·수송 성능, 전자 저지 능력 및 박막의 안정성의 점에서, n 이 0 또는 1 인 것이 바람직하다.n in the general formula (1) represents the number of L. In the high molecular weight compound of the present invention, n is preferably 0 or 1 from the viewpoints of hole injection/transport performance, electron blocking ability, and thin film stability.
상기 일반식 (2) 에 있어서, Y 는 산소 원자 (O), 황 원자 (S), 또는 하기 식 (3) 으로 나타내는 기이다.In the general formula (2), Y is an oxygen atom (O), a sulfur atom (S), or a group represented by the following formula (3).
식 중의 R4 는, 치환 혹은 무치환의 아릴기, 또는 치환 혹은 무치환의 알킬기를 나타낸다.R 4 in the formula represents a substituted or unsubstituted aryl group or a substituted or unsubstituted alkyl group.
상기 R4 로 나타내는 알킬기의 예로는, 상기 서술한 기와 동일한 기를 들 수 있다. 또, 아릴기의 예로는, 상기 서술한 기와 동일한 기를 들 수 있다.Examples of the alkyl group represented by R 4 include the same groups as those described above. Moreover, examples of the aryl group include the same groups as the groups described above.
본 발명의 고분자량 화합물에 있어서는, 정공의 주입·수송 성능, 전자 저지 능력 및 박막의 안정성의 점에서, Y 가 산소 원자 (O) 인 것이 바람직하다.In the high molecular weight compound of the present invention, it is preferable that Y is an oxygen atom (O) from the viewpoints of hole injection/transport performance, electron blocking ability, and thin film stability.
본 발명에 있어서, 상기 서술한 일반식 (1) 로 나타내는 반복 단위 A 의 구체예를, 도 1 내지 도 5 에, 반복 단위 1-1 ∼ 1-28 로서 나타내었다. 또, 상기 서술한 일반식 (2) 로 나타내는 반복 단위 B 의 구체예를, 도 6 내지 도 17 에, 반복 단위 2-1 ∼ 2-68 로서 나타내었다. 또한, 도 1 내지 도 17 에 나타낸 화학 구조에 있어서, 파선은, 인접하는 반복 단위로의 결합손을 나타내고, 고리로부터 연장되어 있는 선단이 프리한 실선은, 그 프리한 선단이 메틸기인 것을 나타내고 있다. 반복 단위로서 바람직한 구체예를 나타냈지만, 본 발명에서 사용되는 반복 단위는 이들의 예에 한정되는 것은 아니다.In the present invention, specific examples of the repeating unit A represented by the above-mentioned general formula (1) are shown in Figures 1 to 5 as repeating units 1-1 to 1-28. In addition, specific examples of repeating unit B represented by the above-mentioned general formula (2) are shown as repeating units 2-1 to 2-68 in Figures 6 to 17. In addition, in the chemical structures shown in Figures 1 to 17, the broken lines represent bonding hands to adjacent repeating units, and the solid lines with free ends extending from the ring indicate that the free ends are methyl groups. . Although preferred specific examples of repeating units have been shown, the repeating units used in the present invention are not limited to these examples.
또, 본 발명에 있어서, 상기 서술한 일반식 (1), 일반식 (2) 및 일반식 (4) 중의 X 의 구체예를, 도 18 과 도 19 에, 치환기 1 ∼ 48 로서 나타내었다. 또한, 도 18 과 도 19 에 나타낸 화학식에 있어서, 파선은, 결합 지점인 것을 나타내고 있다. 치환기로서 바람직한 구체예를 나타냈지만, 본 발명에서 사용되는 X 는 이들의 예에 한정되는 것은 아니다.In addition, in the present invention, specific examples of In addition, in the chemical formulas shown in Figures 18 and 19, broken lines indicate bonding points. Although preferred specific examples of the substituent are shown, X used in the present invention is not limited to these examples.
<고분자량 화합물><High molecular weight compounds>
상기 서술한 일반식 (1) 및 일반식 (2) 로 나타내는 반복 단위를 포함하는 본 발명의 고분자량 화합물은, 정공의 주입 특성, 정공의 이동도, 전자 저지 능력, 박막 안정성, 내열성 등의 특성을 보다 높이고 또한 성막성을 확보한다는 관점에서, GPC 에 의해 측정한 폴리스티렌 환산으로의 중량 평균 분자량이 10,000 이상 1,000,000 미만인 것이 바람직하고, 10,000 이상 500,000 미만인 것이 보다 바람직하고, 10,000 이상 300,000 미만의 범위인 것이 더욱 바람직하다.The high molecular weight compound of the present invention containing repeating units represented by the above-mentioned general formula (1) and general formula (2) has properties such as hole injection characteristics, hole mobility, electron blocking ability, thin film stability, and heat resistance. From the viewpoint of further increasing and securing film forming properties, the weight average molecular weight in terms of polystyrene as measured by GPC is preferably 10,000 to less than 1,000,000, more preferably 10,000 to less than 500,000, and 10,000 to less than 300,000. It is more desirable.
본 발명의 고분자량 화합물은, 열가교성을 높이기 위해서, 하기 일반식 (4) 로 나타내는, 열가교성 구조 단위 Q 를 갖는 반복 단위를 포함하는 것이 바람직하다.In order to increase thermal crosslinkability, the high molecular weight compound of the present invention preferably contains a repeating unit having a heat crosslinkable structural unit Q represented by the following general formula (4).
식 중,During the ceremony,
R3, X 및 a 는, 모두 일반식 (1) 에서 나타낸 것과 동일한 정의이다.R 3 , X and a all have the same definition as shown in General Formula (1).
본 발명의 고분자량 화합물에 있어서는, 합성이 용이하기 때문에, 상기 일반식 (4) 중의 R3 은, 상기 일반식 (1) 및 (2) 중의 R3 과 동일한 기인 것이 바람직하고, 또 상기 일반식 (4) 중의 X 는, 상기 일반식 (1) 및 (2) 중의 X 와 동일한 기인 것이 바람직하다.In the high molecular weight compound of the present invention, because it is easy to synthesize, it is preferable that R 3 in the general formula (4) is the same group as R 3 in the general formulas (1) and (2), and It is preferable that X in (4) is the same group as X in the above general formulas (1) and (2).
열가교성 구조 단위 Q 의 구체예로는, 하기 일반식 (5a) ∼ (5af) 에 나타내는 구조를 들 수 있다.Specific examples of the heat-crosslinkable structural unit Q include structures represented by the following general formulas (5a) to (5af).
상기 일반식 (5a) ∼ (5af) 중의 R1, R2, a 및 b 는, 모두 일반식 (1) 에서 나타낸 것과 동일한 정의이다.R 1 , R 2 , a and b in the above general formulas (5a) to (5af) all have the same definitions as those shown in general formula (1).
또한, 상기 식 (5a) ∼ (5af) 에 있어서, 파선은, 인접하는 구조 단위로의 결합손을 나타내고, 고리로부터 연장되고 있는 선단이 프리한 실선은, 그 선단이 메틸기인 것을 나타내고 있다.In addition, in the above formulas (5a) to (5af), the broken line represents a bond to an adjacent structural unit, and the solid line with a free tip extending from the ring indicates that the tip is a methyl group.
본 발명의 고분자량 화합물은, 반복 단위 A 를 1 몰% 이상, 특히 30 몰% 이상 포함하고 있는 것이 바람직하고, 이와 같은 양으로 반복 단위 A 를 포함하고 있는 것을 조건으로서, 반복 단위 B 를 1 몰% 이상, 특히 10 ∼ 60 몰% 의 양으로 포함하고, 나아가서는, 일반식 (4) 로 나타내는 반복 단위를 Q 로 나타냈을 때, 반복 단위 Q 를 1 몰% 이상, 특히 10 ∼ 20 몰% 의 양으로 포함하고 있는 것이 바람직하고, 이와 같은 조건을 만족하도록 반복 단위 A, B 및 Q 를 포함하는 것이, 유기 EL 소자의 유기층을 형성하는 데에 있어서 가장 바람직하다.The high molecular weight compound of the present invention preferably contains 1 mol% or more, especially 30 mol% or more, of the repeating unit A. Provided that the repeating unit A is included in this amount, 1 mole of the repeating unit B % or more, especially in an amount of 10 to 60 mol%, and further, when the repeating unit represented by the general formula (4) is represented by Q, the repeating unit Q is included in an amount of 1 mol% or more, especially 10 to 20 mol%. It is preferable to include it in an amount, and it is most preferable to include repeating units A, B, and Q so as to satisfy these conditions when forming an organic layer of an organic EL device.
본 발명의 고분자량 화합물은, 스즈키 중합 반응 또는 HARTWIG-BUCHWALD 중합 반응에 의해, 각각 C-C 결합 또는 C-N 결합을 형성하고 각 구조 단위를 연쇄함으로써 합성된다. 즉, 각 구조 단위를 갖는 단위 화합물을 준비하고, 이 단위 화합물을 적절히 붕산에스테르화 또는 할로겐화하고, 적절한 촉매를 사용하여 중축합 반응함으로써, 본 발명의 고분자량 화합물을 합성할 수 있다.The high molecular weight compound of the present invention is synthesized by linking each structural unit by forming a C-C bond or a C-N bond, respectively, through the Suzuki polymerization reaction or the HARTWIG-BUCHWALD polymerization reaction. That is, the high molecular weight compound of the present invention can be synthesized by preparing a unit compound having each structural unit, boric acid esterification or halogenation of this unit compound, and polycondensation reaction using an appropriate catalyst.
예를 들어, 반복 단위 A 를 60 몰%, 반복 단위 B 를 30 몰%, 반복 단위 Q 를 10 몰% 로 포함하는 고분자량 화합물은, 하기 일반식 (5) 로 나타내는 것이다.For example, a high molecular weight compound containing 60 mol% of repeating unit A, 30 mol% of repeating unit B, and 10 mol% of repeating unit Q is represented by the following general formula (5).
본 발명의 고분자량 화합물은, 벤젠, 톨루엔, 자일렌, 아니솔 등의 방향족계 유기 용매에 용해시켜 도포액을 조제하고, 이 도포액을 소정의 기재 위에 코팅하고, 가열 건조시킴으로써, 정공 주입성, 정공 수송성, 전자 저지성 등의 특성이 우수한 박막을 형성할 수 있다. 얻어지는 박막은 내열성도 양호하고, 나아가서는 다른 층과의 밀착성도 양호하다.The high molecular weight compound of the present invention is dissolved in an aromatic organic solvent such as benzene, toluene, xylene, or anisole to prepare a coating liquid, and this coating liquid is coated on a predetermined substrate and heated and dried to obtain hole injection properties. , it is possible to form a thin film with excellent properties such as hole transport and electron blocking properties. The resulting thin film has good heat resistance and, furthermore, good adhesion to other layers.
본 발명의 고분자량 화합물은, 유기 EL 소자의 정공 주입층 및/또는 정공 수송층의 구성 재료로서 사용할 수 있다. 본 발명의 고분자량 화합물에 의해 형성된 정공 주입층 및 정공 수송층은, 종래의 재료로 형성된 것에 비하여, 정공의 주입성이 높고, 이동도가 크고, 전자 저지성이 높고, 발광층 내에서 생성된 여기자를 가둘 수 있으며, 또한 정공과 전자가 재결합하는 확률을 향상시켜, 고발광 효율을 얻을 수 있음과 함께, 구동 전압이 저하되고, 유기 EL 소자의 내구성이 향상된다는 이점을 실현할 수 있다.The high molecular weight compound of the present invention can be used as a constituent material of the hole injection layer and/or hole transport layer of an organic EL device. Compared to those formed from conventional materials, the hole injection layer and hole transport layer formed from the high molecular weight compound of the present invention have high hole injection properties, high mobility, high electron blocking properties, and are capable of preventing exciton generated in the light-emitting layer. The advantage of being able to confine and improve the recombination probability of holes and electrons is that high luminous efficiency can be obtained, and the driving voltage is lowered and the durability of the organic EL device is improved can be realized.
또, 상기와 같은 전기 특성을 갖는 본 발명의 고분자량 화합물은, 종래의 재료보다 와이드 갭이고, 여기자의 가둠에 유효하기 때문에, 당연히, 전자 저지층이나 발광층에도 바람직하게 사용할 수 있다.In addition, the high molecular weight compound of the present invention having the above-described electrical properties has a wider gap than conventional materials and is effective in confining excitons, so it can naturally be suitably used in an electron blocking layer or a light-emitting layer.
<유기 EL 소자><Organic EL device>
상기 서술한 본 발명의 고분자량 화합물을 사용하여 형성되는 유기층을 구비한 유기 EL 소자는, 예를 들어, 도 20 에 나타내는 구조를 갖고 있다. 즉, 유리 기판 (1) (투명 수지 기판 등, 다른 투명 기판이어도 된다) 위에, 투명 양극 (2), 정공 주입층 (3), 정공 수송층 (4), 전자 저지층 (5), 발광층 (6), 전자 수송층 (7) 및 음극 (8) 이 형성되어 있다.The organic EL device provided with an organic layer formed using the high molecular weight compound of the present invention described above has a structure shown in Fig. 20, for example. That is, on the glass substrate 1 (may be another transparent substrate such as a transparent resin substrate), a transparent anode 2, a hole injection layer 3, a hole transport layer 4, an electron blocking layer 5, and a light emitting layer 6 ), an electron transport layer (7) and a cathode (8) are formed.
물론, 본 발명의 고분자량 화합물이 적용되는 유기 EL 소자는, 상기의 층 구조에 한정되는 것은 아니고, 발광층 (6) 과 전자 수송층 (7) 사이에 정공 저지층을 형성할 수 있고, 나아가서는, 음극 (8) 과 전자 수송층 (7) 사이에 전자 주입층을 형성할 수도 있다. 또한 몇 가지 층을 생략할 수도 있다. 예를 들어, 기판 (1) 위에, 양극 (2), 정공 수송층 (4), 발광층 (6), 전자 수송층 (7) 및 음극 (8) 을 형성한 심플한 층 구조로 할 수도 있다. 또, 동일한 기능을 갖는 층을 중첩한 2 층 구조로 할 수도 있다.Of course, the organic EL device to which the high molecular weight compound of the present invention is applied is not limited to the above layer structure, and a hole blocking layer can be formed between the light-emitting layer 6 and the electron transport layer 7, and further, An electron injection layer may be formed between the cathode (8) and the electron transport layer (7). You can also omit some layers. For example, a simple layer structure may be used in which an anode 2, a hole transport layer 4, a light emitting layer 6, an electron transport layer 7, and a cathode 8 are formed on the substrate 1. Additionally, a two-layer structure can be used in which layers with the same function are overlapped.
본 발명의 고분자량 화합물은, 그 정공 주입성이나 정공 수송성 등의 특성을 살려, 상기의 양극 (2) 과 음극 (8) 사이에 형성되는 유기층 (예를 들어, 정공 주입층 (3), 정공 수송층 (4), 전자 저지층 (5) 또는 발광층 (6)) 의 형성 재료로서 바람직하게 사용된다.The high molecular weight compound of the present invention takes advantage of its hole injection properties and hole transport properties, and is used to form an organic layer (e.g., hole injection layer 3, hole injection layer 3) formed between the anode 2 and the cathode 8. It is preferably used as a forming material for the transport layer (4), the electron blocking layer (5), or the light-emitting layer (6).
상기의 유기 EL 소자에 있어서, 투명 양극 (2) 은, 그 자체 공지된 전극 재료로 형성되어 있어 되고, ITO 나 금과 같은 일함수가 큰 전극 재료를 기판 (1) (유리 기판 등의 투명 기판) 위에 증착함으로써 형성된다.In the above organic EL device, the transparent anode 2 is formed of a known electrode material, and an electrode material with a large work function such as ITO or gold is used as the substrate 1 (a transparent substrate such as a glass substrate). ) is formed by depositing on.
또, 투명 양극 (2) 위에 형성되어 있는 정공 주입층 (3) 은, 본 발명의 고분자량 화합물을, 예를 들어, 톨루엔, 자일렌, 아니솔 등의 방향족계 유기 용매에 용해시킨 도포액을 사용하여 형성할 수 있다. 즉, 이 도포액을, 스핀 코트, 잉크젯 등에 의해, 투명 양극 (2) 위에 코팅함으로써, 정공 주입층 (3) 을 형성할 수 있다.In addition, the hole injection layer 3 formed on the transparent anode 2 is a coating solution obtained by dissolving the high molecular weight compound of the present invention in an aromatic organic solvent such as toluene, xylene, or anisole. It can be formed using That is, the hole injection layer 3 can be formed by coating this coating liquid on the transparent anode 2 by spin coating, inkjet, etc.
또, 본 발명의 고분자량 화합물을 사용하여 형성되는 유기층을 구비한 유기 EL 소자에 있어서, 상기의 정공 주입층 (3) 은 본 발명의 고분자량 화합물을 이용하지 않고, 종래 공지된 재료, 예를 들어, 이하의 재료를 사용하여 형성할 수도 있다.In addition, in the organic EL device having an organic layer formed using the high molecular weight compound of the present invention, the hole injection layer 3 does not use the high molecular weight compound of the present invention, but is made of a conventionally known material, such as For example, it can also be formed using the following materials.
구리프탈로시아닌으로 대표되는 포르피린 화합물 ; Porphyrin compounds represented by copper phthalocyanine;
스타 버스트형의 트리페닐아민 유도체 ; Star burst type triphenylamine derivative;
단결합 또는 헤테로 원자를 포함하지 않는 2 가기로 연결한 구조를 갖는 아릴아민 (예를 들어, 트리페닐아민 3 량체 및 4 량체) ; Arylamines having a bivalently linked structure containing no single bonds or heteroatoms (for example, triphenylamine trimers and tetramers);
헥사시아노아자트리페닐렌과 같은 억셉터성의 복소 고리 화합물 ; Acceptor heterocyclic compounds such as hexacyanoazatriphenylene;
도포형의 고분자 재료, 예를 들어, 폴리(3,4-에틸렌디옥시티오펜) (PEDOT), 폴리(스티렌술포네이트) (PSS) 등.Coated polymer materials, such as poly(3,4-ethylenedioxythiophene) (PEDOT), poly(styrenesulfonate) (PSS), etc.
이와 같은 재료를 사용한 층 (박막) 의 형성은, 증착법이나, 스핀 코트법이나 잉크젯법 등에 의한 코팅에 의해 성막할 수 있다. 이들은, 다른 층에 대해서도 동일하고, 막형성 재료의 종류에 따라, 증착법이나 코팅법에 의해 성막이 실시된다.A layer (thin film) using such a material can be formed by deposition, coating using a spin coating method, an inkjet method, etc. These are the same for other layers, and depending on the type of film-forming material, film formation is performed by a vapor deposition method or a coating method.
상기의 정공 주입층 (3) 위에 형성되어 있는 정공 수송층 (4) 도, 정공 주입층 (3) 과 마찬가지로, 본 발명의 고분자량 화합물을 사용한 스핀 코트나 잉크젯 등에 의한 코팅에 의해 형성할 수 있다.Like the hole injection layer 3, the hole transport layer 4 formed on the hole injection layer 3 can be formed by spin coating or inkjet coating using the high molecular weight compound of the present invention.
또, 본 발명의 고분자량 화합물을 사용하여 형성되는 유기층을 구비한 유기 EL 소자에 있어서, 종래 공지된 정공 수송 재료를 사용하여 정공 수송층 (4) 을 형성할 수도 있다. 이와 같은 정공 수송 재료로서 대표적인 것은, 다음과 같다.Moreover, in the organic EL device provided with an organic layer formed using the high molecular weight compound of the present invention, the hole transport layer 4 can also be formed using a conventionally known hole transport material. Representative examples of such hole transport materials are as follows.
벤지딘 유도체, 예를 들어, N,N'-디페닐-N,N'-디(m-톨릴)벤지딘 (이하, TPD 로 약기한다) ; N,N'-디페닐-N,N'-디(α-나프틸)벤지딘 (이하, NPD 로 약기한다) ; N,N,N',N'-테트라비페닐릴벤지딘.Benzidine derivatives, such as N,N'-diphenyl-N,N'-di(m-tolyl)benzidine (hereinafter abbreviated as TPD); N,N'-diphenyl-N,N'-di(α-naphthyl)benzidine (hereinafter abbreviated as NPD); N,N,N',N'-Tetrabiphenylylbenzidine.
아민계 유도체, 예를 들어, 1,1-비스[4-(디-4-톨릴아미노)페닐]시클로헥산 (이하, TAPC 로 약기한다).Amine-based derivatives, such as 1,1-bis[4-(di-4-tolylamino)phenyl]cyclohexane (hereinafter abbreviated as TAPC).
다양한 트리페닐아민 3 량체 및 4 량체.Various triphenylamine trimers and tetramers.
정공 주입층용으로서도 사용되는 도포형 고분자 재료.A coated polymer material also used as a hole injection layer.
상기 서술한 정공 수송층의 화합물은, 본 발명의 고분자량 화합물을 포함하여 각각 단독으로 성막해도 되지만, 2 종 이상 혼합하여 성막할 수도 있다. 또, 상기 화합물의 1 종 또는 복수 종을 사용하여 복수의 층을 형성하고, 이와 같은 층이 적층된 다층막을 정공 수송층으로 할 수도 있다.The compounds of the hole transport layer described above, including the high molecular weight compound of the present invention, may be formed into a film individually, or two or more types may be mixed together to form a film. In addition, one or more types of the above compounds may be used to form multiple layers, and the multilayer film in which such layers are laminated may be used as a hole transport layer.
또, 도 20 에 나타내는 본 발명의 고분자량 화합물을 사용하여 형성되는 유기층을 구비한 유기 EL 소자에 있어서, 정공 주입층 (3) 과 정공 수송층 (4) 을 겸한 층으로 할 수도 있고, 이와 같은 정공 주입·수송층은, PEDOT 등의 고분자 재료를 사용하여 코팅에 의해 형성할 수 있다.Additionally, in the organic EL device provided with an organic layer formed using the high molecular weight compound of the present invention shown in FIG. 20, a layer that also serves as the hole injection layer 3 and the hole transport layer 4 may be used, and such holes The injection/transport layer can be formed by coating using a polymer material such as PEDOT.
또한, 정공 수송층 (4) (정공 주입층 (3) 도 동일) 에 있어서, 그 층에 통상 사용되는 재료에 대하여, 트리스브로모페닐아민헥사클로르안티몬 또는 라디알렌 유도체 (예를 들어, WO2014/009310 참조) 등을 P 도핑한 것을 사용할 수 있다. 또, TPD 기본 골격을 갖는 고분자 화합물 등을 사용하여 정공 수송층 (4) (또는 정공 주입층 (3)) 을 형성할 수 있다.Additionally, in the hole transport layer 4 (the same applies to the hole injection layer 3), materials commonly used in that layer include trisbromophenylaminehexachlorantimony or radialene derivatives (e.g., WO2014/009310 (Reference) etc. doped with P can be used. Additionally, the hole transport layer 4 (or hole injection layer 3) can be formed using a polymer compound having a TPD basic skeleton or the like.
또한, 도 20 에 나타내는 바와 같이, 정공 수송층과 발광층 사이에, 전자 저지층을 형성할 수 있고, 예를 들어, 본 발명의 고분자량 화합물을 사용하여 스핀 코트나 잉크젯 등에 의한 코팅에 의해 형성할 수 있다.In addition, as shown in FIG. 20, an electron blocking layer can be formed between the hole transport layer and the light emitting layer, and can be formed, for example, by coating by spin coating or inkjet using the high molecular weight compound of the present invention. there is.
또, 본 발명의 고분자량 화합물을 사용하여 형성되는 유기층을 구비한 유기 EL 소자에 있어서, 전자 저지 작용을 갖는 공지된 전자 저지성 화합물, 예를 들어, 카르바졸 유도체, 또는 트리페닐실릴기를 갖고 또한 트리아릴아민 구조를 갖는 화합물 등을 사용하여 전자 저지층을 형성할 수도 있다. 대표적인 것은 이하와 같다.In addition, in the organic EL device provided with an organic layer formed using the high molecular weight compound of the present invention, a known electron blocking compound having an electron blocking function, for example, a carbazole derivative, or a triphenylsilyl group and The electron blocking layer can also be formed using a compound having a triarylamine structure. Representative examples are as follows.
카르바졸 유도체, 예를 들어, 4,4',4''-트리(N-카르바졸릴)트리페닐아민 (이하, TCTA 로 약기한다) ; 9,9-비스[4-(카르바졸-9-일)페닐]플루오렌 ; 1,3-비스(카르바졸-9-일)벤젠 (이하, mCP 로 약기한다) ; 2,2-비스(4-카르바졸-9-일페닐)아다만탄 (이하, Ad-Cz 로 약기한다).Carbazole derivatives, such as 4,4',4''-tri(N-carbazolyl)triphenylamine (hereinafter abbreviated as TCTA); 9,9-bis[4-(carbazol-9-yl)phenyl]fluorene; 1,3-bis(carbazol-9-yl)benzene (hereinafter abbreviated as mCP); 2,2-bis(4-carbazol-9-ylphenyl)adamantane (hereinafter abbreviated as Ad-Cz).
트리아릴아민 구조를 갖는 화합물, 예를 들어, 9-[4-(카르바졸-9-일)페닐]-9-[4-(트리페닐실릴)페닐]-9H-플루오렌.Compounds with a triarylamine structure, such as 9-[4-(carbazol-9-yl)phenyl]-9-[4-(triphenylsilyl)phenyl]-9H-fluorene.
전자 저지층도, 본 발명의 고분자량 화합물을 포함하여 각각 단독으로 성막해도 되지만, 2 종 이상 혼합하여 성막할 수도 있다. 또, 상기 화합물의 1 종 또는 복수 종을 사용하여 복수의 층을 형성하고, 이와 같은 층이 적층된 다층막을 전자 저지층으로 할 수도 있다.The electron blocking layer may also be formed individually, including the high molecular weight compound of the present invention, or may be formed by mixing two or more types. In addition, one or more types of the above compounds may be used to form multiple layers, and the multilayer film in which such layers are laminated may be used as an electron blocking layer.
본 발명의 고분자량 화합물을 사용하여 형성되는 유기층을 구비한 유기 EL 소자에 있어서, 발광층 (6) 은, Alq3 을 비롯한 퀴놀리놀 유도체의 금속 착물 외에, 아연이나 베릴륨, 알루미늄 등의 각종 금속 착물, 안트라센 유도체, 비스스티릴벤젠 유도체, 피렌 유도체, 옥사졸 유도체, 폴리파라페닐렌비닐렌 유도체 등의 발광 재료를 사용하여 형성할 수 있다.In the organic EL device having an organic layer formed using the high molecular weight compound of the present invention, the light-emitting layer 6 is a metal complex of quinolinol derivatives including Alq 3 , as well as various metal complexes such as zinc, beryllium, and aluminum. , anthracene derivatives, bistyrylbenzene derivatives, pyrene derivatives, oxazole derivatives, and polyparaphenylenevinylene derivatives.
또, 발광층 (6) 을 호스트 재료와 도펀트 재료로 구성할 수도 있다. 이 경우의 호스트 재료로서, 상기의 발광 재료에 더하여, 티아졸 유도체, 벤즈이미다졸 유도체, 폴리디알킬플루오렌 유도체 등을 사용할 수 있고, 또한 전술한 본 발명의 고분자량 화합물을 사용할 수도 있다. 도펀트 재료로는, 퀴나크리돈, 쿠마린, 루브렌, 페릴렌 및 그것들의 유도체, 벤조피란 유도체, 로다민 유도체, 아미노스티릴 유도체 등을 사용할 수 있다.Additionally, the light-emitting layer 6 may be composed of a host material and a dopant material. As a host material in this case, in addition to the above-mentioned light-emitting materials, thiazole derivatives, benzimidazole derivatives, polydialkyl fluorene derivatives, etc. can be used, and the high molecular weight compound of the present invention described above can also be used. As dopant materials, quinacridone, coumarin, rubrene, perylene and their derivatives, benzopyran derivatives, rhodamine derivatives, aminostyryl derivatives, etc. can be used.
이와 같은 발광층 (6) 도, 각 발광 재료의 1 종 또는 2 종 이상을 사용한 단층 구성으로 할 수도 있고, 복수의 층을 적층한 다층 구조로 할 수도 있다.Such a light-emitting layer 6 may also have a single-layer structure using one or two or more types of each light-emitting material, or may have a multi-layer structure in which a plurality of layers are stacked.
또한, 발광 재료로서 인광 발광 재료를 사용하여 발광층 (6) 을 형성할 수도 있다. 인광 발광 재료로는, 이리듐이나 백금 등의 금속 착물의 인광 발광체를 사용할 수 있다. 예를 들어, Ir(ppy)3 등의 녹색의 인광 발광체, FIrpic, FIr6 등의 청색의 인광 발광체, Btp2 Ir(acac) 등의 적색의 인광 발광체 등을 사용할 수 있고, 이들 인광 발광 재료는, 정공 주입·수송성의 호스트 재료나 전자 수송성의 호스트 재료에 도프하여 사용된다.Additionally, the light-emitting layer 6 can also be formed using a phosphorescent material as the light-emitting material. As the phosphorescent material, a phosphorescent material made of a metal complex such as iridium or platinum can be used. For example, a green phosphorescent emitter such as Ir(ppy) 3 , a blue phosphorescent emitter such as FIrpic or FIr6, a red phosphorescent emitter such as Btp 2 Ir(acac), etc. can be used. These phosphorescent materials include: It is used by doping a hole injection/transport host material or an electron transport host material.
또한, 인광성의 발광 재료의 호스트 재료에 대한 도프는 농도 소광을 피하기 위해서, 발광층 전체에 대해 1 ∼ 30 중량퍼센트의 범위에서, 공증착에 의해 도프하는 것이 바람직하다.In addition, in order to avoid concentration quenching, it is preferable to dope the host material of the phosphorescent light-emitting material by co-deposition in the range of 1 to 30 weight percent with respect to the entire light-emitting layer.
또, 발광 재료로서 PIC-TRZ, CC2TA, PXZ-TRZ, 4CzIPN 등의 CDCB 유도체 등의 지연 형광을 방사하는 재료를 사용할 수도 있다 (Appl. Phys. Let., 98, 083302 (2011), Chem. Comu㎜., 48, 11392 (2012), NatuRe, 492, 234 (2012) 참조).Additionally, as a light-emitting material, materials that emit delayed fluorescence such as CDCB derivatives such as PIC-TRZ, CC2TA, PXZ-TRZ, and 4CzIPN can be used (Appl. Phys. Let., 98, 083302 (2011), Chem. Comu ㎜., 48, 11392 (2012), NatuRe, 492, 234 (2012)).
본 발명의 고분자량 화합물에, 도펀트로 불리고 있는 형광 발광체, 인광 발광체 또는 지연 형광을 방사하는 재료를 담지시켜 발광층 (6) 을 형성함으로써, 구동 전압이 저하되고, 발광 효율이 개선된 유기 EL 소자를 실현할 수 있다.By supporting the high molecular weight compound of the present invention with a fluorescent emitter, a phosphorescent emitter, or a material that emits delayed fluorescence, called a dopant, to form the light emitting layer (6), an organic EL device with reduced driving voltage and improved luminous efficiency is provided. It can be realized.
본 발명의 고분자량 화합물을 사용하여 형성되는 유기층을 구비한 유기 EL 소자에 있어서, 정공 주입·수송성의 호스트 재료로서 본 발명의 고분자량 화합물을 사용할 수 있다. 그 외에, 4,4'-디(N-카르바졸릴)비페닐 (이후, CBP 로 약칭한다), TCTA, mCP 등의 카르바졸 유도체 등을 사용할 수도 있다.In an organic EL device having an organic layer formed using the high molecular weight compound of the present invention, the high molecular weight compound of the present invention can be used as a host material for hole injection and transport. In addition, carbazole derivatives such as 4,4'-di(N-carbazolyl)biphenyl (hereinafter abbreviated as CBP), TCTA, and mCP can also be used.
또, 본 발명의 고분자량 화합물을 사용하여 형성되는 유기층을 구비한 유기 EL 소자에 있어서, 전자 수송성의 호스트 재료로서 p-비스(트리페닐실릴)벤젠 (이후, UGH2 로 약칭한다) 및 2,2',2''-(1,3,5-페닐렌)-트리스(1-페닐-1H-벤즈이미다졸) (이후, TPBI 로 약칭한다) 등을 사용할 수 있다.In addition, in the organic EL device having an organic layer formed using the high molecular weight compound of the present invention, p-bis(triphenylsilyl)benzene (hereinafter abbreviated as UGH2) and 2,2 as the electron transporting host material. ',2''-(1,3,5-phenylene)-tris(1-phenyl-1H-benzimidazole) (hereinafter abbreviated as TPBI), etc. can be used.
본 발명의 고분자량 화합물을 사용하여 형성되는 유기층을 구비한 유기 EL 소자에 있어서, 발광층 (6) 과 전자 수송층 (7) 사이에 형성하는 정공 저지층 (도 20 에서는 나타나 있지 않다) 은, 그 자체 공지된 정공 저지 작용을 갖는 화합물을 사용하여 형성할 수 있다. 이와 같은 정공 저지 작용을 갖는 공지 화합물의 예로는, 이하의 것을 들 수 있다.In the organic EL device provided with an organic layer formed using the high molecular weight compound of the present invention, the hole blocking layer (not shown in Fig. 20) formed between the light-emitting layer 6 and the electron transport layer 7 is itself It can be formed using a known compound having a hole blocking effect. Examples of known compounds having such a hole blocking effect include the following.
바소쿠프로인 (이후, BCP 로 약칭한다) 등의 페난트롤린 유도체 ; Phenanthroline derivatives such as basocuproine (hereinafter abbreviated as BCP);
알루미늄(III)비스(2-메틸-8-퀴놀리네이트)-4-페닐페놀레이트 (이후, BAlq 로 약칭한다) 등의 퀴놀리놀 유도체의 금속 착물 ; Metal complexes of quinolinol derivatives such as aluminum(III)bis(2-methyl-8-quinolinate)-4-phenylphenolate (hereinafter abbreviated as BAlq);
각종 희토류 착물 ; Various rare earth complexes;
트리아졸 유도체 ; triazole derivatives;
트리아진 유도체 ; Triazine derivatives;
옥사디아졸 유도체.Oxadiazole derivatives.
이들의 재료는, 이하에 서술하는 전자 수송층 (7) 의 형성에도 사용할 수 있고, 나아가서는, 정공 저지층 겸 전자 수송층 (7) 으로서 사용할 수도 있다.These materials can also be used to form the electron transport layer 7 described below, and can also be used as a hole blocking layer and electron transport layer 7.
이와 같은 정공 저지층도, 단층 또는 다층의 적층 구조로 할 수 있고, 각 층은, 상기 서술한 정공 저지 작용을 갖는 화합물의 1 종 또는 2 종 이상을 사용하여 성막된다.Such a hole blocking layer can also have a single-layer or multi-layer laminated structure, and each layer is formed into a film using one type or two or more types of the compounds having the hole blocking effect described above.
본 발명의 고분자량 화합물을 사용하여 형성되는 유기층을 구비한 유기 EL 소자에 있어서, 전자 수송층 (7) 은, 그 자체 공지된 전자 수송성의 화합물, 예를 들어, Alq3, BAlq 를 비롯한 퀴놀리놀 유도체의 금속 착물 외에, 각종 금속 착물, 피리딘 유도체, 피리미딘 유도체, 트리아졸 유도체, 트리아진 유도체, 옥사디아졸 유도체, 티아디아졸 유도체, 카르보디이미드 유도체, 퀴녹살린 유도체, 페난트롤린 유도체, 실롤 유도체, 벤조이미다졸 유도체 등을 사용하여 형성된다.In the organic EL device having an organic layer formed using the high molecular weight compound of the present invention, the electron transport layer 7 is an electron transport compound known per se, for example, quinolinol including Alq 3 and BAlq. In addition to metal complexes of derivatives, various metal complexes, pyridine derivatives, pyrimidine derivatives, triazole derivatives, triazine derivatives, oxadiazole derivatives, thiadiazole derivatives, carbodiimide derivatives, quinoxaline derivatives, phenanthroline derivatives, silol It is formed using derivatives, benzimidazole derivatives, etc.
이 전자 수송층 (7) 도, 단층 또는 다층의 적층 구조로 할 수 있고, 각 층은, 상기 서술한 전자 수송성 화합물의 1 종 또는 2 종 이상을 사용하여 성막된다.This electron transport layer 7 can also have a single-layer or multi-layer laminated structure, and each layer is formed into a film using one or two or more of the electron transport compounds described above.
또한, 본 발명의 고분자량 화합물을 사용하여 형성되는 유기층을 구비한 유기 EL 소자에 있어서, 필요에 따라 형성되는 전자 주입층 (도 20 에서는 나타나 있지 않다) 도, 그 자체 공지된 것, 예를 들어, 불화리튬, 불화세슘 등의 알칼리 금속염, 불화마그네슘 등의 알칼리 토금속염, 산화알루미늄 등의 금속 산화물, 리튬퀴놀린 등의 유기 금속 착물 등을 사용하여 형성할 수 있다.In addition, in the organic EL device provided with an organic layer formed using the high molecular weight compound of the present invention, the electron injection layer (not shown in Fig. 20) formed as needed is also known per se, for example , alkali metal salts such as lithium fluoride and cesium fluoride, alkaline earth metal salts such as magnesium fluoride, metal oxides such as aluminum oxide, and organic metal complexes such as lithium quinoline.
본 발명의 고분자량 화합물을 사용하여 형성되는 유기층을 구비한 유기 EL 소자의 음극 (8) 으로는, 알루미늄과 같은 일함수가 낮은 전극 재료, 및 마그네슘은 합금, 마그네슘인듐 합금, 알루미늄마그네슘 합금과 같은, 보다 일함수가 낮은 합금이 전극 재료로서 사용된다.As the cathode 8 of the organic EL device having an organic layer formed using the high molecular weight compound of the present invention, an electrode material with a low work function such as aluminum, and an electrode material such as magnesium silver alloy, magnesium indium alloy, and aluminum magnesium alloy are used. , alloys with lower work functions are used as electrode materials.
이상에서 서술한 바와 같이, 본 발명의 고분자량 화합물을 사용하여, 정공 주입층, 정공 수송층, 전자 저지층, 및 발광층 중 적어도 어느 층을 형성함으로써, 발광 효율 및 전력 효율이 높고, 실용 구동 전압이 낮고, 발광 개시 전압도 낮고, 매우 우수한 내구성을 갖는 유기 EL 소자가 얻어진다. 특히, 이 유기 EL 소자에서는, 높은 발광 효율을 가지면서, 구동 전압이 저하되고, 전류 내성이 개선되고, 최대 발광 휘도가 향상된다.As described above, by forming at least one of the hole injection layer, hole transport layer, electron blocking layer, and light emitting layer using the high molecular weight compound of the present invention, luminous efficiency and power efficiency are high, and the practical driving voltage is low. An organic EL device with a low emission start voltage and extremely excellent durability is obtained. In particular, this organic EL device has high luminous efficiency, while driving voltage is lowered, current tolerance is improved, and maximum luminance is improved.
실시예Example
이하, 본 발명을 다음의 실험예에 의해 설명한다.Hereinafter, the present invention will be explained by the following experimental examples.
또한, 이하의 설명에 있어서, 본 발명의 고분자량 화합물이 갖는 일반식 (1) 로 나타내는 반복 단위를「반복 단위 A」, 일반식 (2) 로 나타내는 반복 단위를「반복 단위 B」, 열가교성 구조 단위 Q 를 갖는 일반식 (4) 로 나타내는 반복 단위를「반복 단위 Q」로서 나타내었다.In addition, in the following description, the repeating unit represented by the general formula (1) of the high molecular weight compound of the present invention is referred to as "repeating unit A", the repeating unit represented by general formula (2) is referred to as "repeating unit B", and heat crosslinkability The repeating unit represented by general formula (4) having the structural unit Q is indicated as “repeating unit Q”.
또, 합성된 화합물의 정제는, 칼럼 크로마토그래프에 의한 정제, 용매에 의한 정석법에 의해 실시하였다. 화합물의 동정은, NMR 분석에 의해 실시하였다.In addition, the synthesized compound was purified by column chromatography and crystallization using a solvent. Identification of the compound was performed by NMR analysis.
본 발명의 고분자량 화합물을 제조하기 위해서, 이하의 중간체 1 ∼ 3 을 합성하였다.In order to produce the high molecular weight compound of the present invention, the following intermediates 1 to 3 were synthesized.
<중간체 1 의 합성><Synthesis of Intermediate 1>
중간체 1 은, 도 1 에 나타내는 반복 단위 1-1 의 부분 구조를 도입하기 위해서 사용한다.Intermediate 1 is used to introduce the partial structure of repeating unit 1-1 shown in FIG. 1.
하기의 성분을, 질소 치환한 반응 용기에 첨가하고, 30 분간 질소 가스를 통기하였다.The following components were added to a reaction vessel purged with nitrogen, and nitrogen gas was ventilated for 30 minutes.
N,N-비스(4-브로모페닐)-9,9-디-n-옥틸-9H-플루오렌-2-아민 : 16.7 gN,N-bis(4-bromophenyl)-9,9-di-n-octyl-9H-fluoren-2-amine: 16.7 g
비스(피나콜라토)디보론 : 11.9 gBis(Pinacolato)diborone: 11.9 g
아세트산칼륨 : 5.7 gPotassium acetate: 5.7 g
1,4-디옥산 : 170 ml1,4-dioxane: 170 ml
이어서, {1,1'-비스(디페닐포스피노)페로센}팔라듐(II)디클로라이드의 디클로로메탄 부가물 0.19 g 을 첨가하여 가열하고, 100 ℃ 에서 7 시간 교반하였다. 실온까지 냉각한 후, 물과 톨루엔을 첨가하고, 분액 조작을 실시함으로써 유기층을 채취하였다. 이 유기층을 무수 황산마그네슘으로 탈수한 후, 감압하에서 농축함으로써 조제물 (粗製物) 을 얻었다. 조제물을 칼럼 크로마토그래프 (아세트산에틸/n-헥산 = 1/20) 로 정제함으로써, 중간체 1 의 백색 분체 7.6 g (수율 40 %) 을 얻었다.Next, 0.19 g of a dichloromethane adduct of {1,1'-bis(diphenylphosphino)ferrocene}palladium(II) dichloride was added, heated, and stirred at 100°C for 7 hours. After cooling to room temperature, water and toluene were added and a liquid separation operation was performed to collect the organic layer. This organic layer was dehydrated with anhydrous magnesium sulfate and then concentrated under reduced pressure to obtain a crude product. The crude product was purified by column chromatography (ethyl acetate/n-hexane = 1/20) to obtain 7.6 g (yield 40%) of the white powder of Intermediate 1.
<중간체 2 의 합성><Synthesis of Intermediate 2>
중간체 2 는, 열가교성 구조 단위 Q 인 일반식 (5e) 로 나타내는 구조 단위를 도입하기 위해서 사용한다.Intermediate 2 is used to introduce a structural unit represented by general formula (5e), which is a thermally crosslinkable structural unit Q.
하기의 성분을, 질소 치환한 반응 용기에 첨가하고, 30 분간 질소 가스를 통기하였다.The following components were added to a reaction vessel purged with nitrogen, and nitrogen gas was ventilated for 30 minutes.
N,N-비스(4-브로모페닐)-N-(벤조시클로부텐-4-일)-아민 : 8.0 gN,N-bis(4-bromophenyl)-N-(benzocyclobuten-4-yl)-amine: 8.0 g
비스(피나콜라토)디보론 : 9.9 gBis(Pinacolato)diborone: 9.9 g
아세트산칼륨 : 4.6 gPotassium acetate: 4.6 g
1,4-디옥산 : 80 ml1,4-dioxane: 80 ml
이어서, {1,1'-비스(디페닐포스피노)페로센}팔라듐(II)디클로라이드의 디클로로메탄 부가물 0.3 g 을 첨가하여 가열하고, 90 ℃ 에서 11 시간 교반하였다. 실온까지 냉각한 후, 시수 (市水) 와 톨루엔을 첨가하고, 분액 조작을 실시함으로써 유기층을 채취하였다. 이 유기층을 무수 황산마그네슘으로 탈수한 후, 감압하에서 농축함으로써 조제물을 얻었다. 조제물을 톨루엔/메탄올 = 1/2 에 의해 재결정함으로써, 중간체 2 의 백색 분체 3.4 g (수율 35 %) 을 얻었다.Next, 0.3 g of a dichloromethane adduct of {1,1'-bis(diphenylphosphino)ferrocene}palladium(II) dichloride was added, heated, and stirred at 90°C for 11 hours. After cooling to room temperature, city water and toluene were added, and the organic layer was collected by performing a liquid separation operation. This organic layer was dehydrated with anhydrous magnesium sulfate and then concentrated under reduced pressure to obtain a crude product. The crude product was recrystallized using toluene/methanol = 1/2 to obtain 3.4 g of white powder of Intermediate 2 (yield 35%).
<중간체 3 의 합성><Synthesis of Intermediate 3>
중간체 3 은, 도 6 에 나타내는 반복 단위 2-1 의 부분 구조를 도입하기 위해서 사용한다.Intermediate 3 is used to introduce the partial structure of repeating unit 2-1 shown in Figure 6.
하기의 성분을, 질소 치환한 반응 용기에 첨가하고, 30 분간 질소 가스를 통기하였다.The following components were added to a reaction vessel purged with nitrogen, and nitrogen gas was ventilated for 30 minutes.
비스(p-브로모페닐)-2-디벤조푸란아민 : 32.0 gBis(p-bromophenyl)-2-dibenzofuranamine: 32.0 g
비스(피나콜라토)디보론 : 34.6 gBis(Pinacolato)diborone: 34.6 g
아세트산칼륨 : 19.1 gPotassium acetate: 19.1 g
1,4-디옥산 : 150 ml1,4-dioxane: 150 ml
이어서, {1,1'-비스(디페닐포스피노)페로센}팔라듐(II)디클로라이드의 디클로로메탄 부가물 0.5 g 을 첨가하여 가열하고, 100 ℃ 에서 13 시간 교반하였다. 실온까지 냉각한 후, 시수와 클로로포름을 첨가하고, 분액 조작을 실시함으로써 유기층을 채취하였다. 이 유기층을 무수 황산나트륨으로 탈수한 후, 감압하에서 농축함으로써 조제물을 얻었다. 조제물을 톨루엔/메탄올 = 1/1 에 의해 재결정함으로써, 중간체 3 의 거의 백색 분체 18.6 g (수율 48 %) 을 얻었다.Next, 0.5 g of a dichloromethane adduct of {1,1'-bis(diphenylphosphino)ferrocene}palladium(II) dichloride was added, heated, and stirred at 100°C for 13 hours. After cooling to room temperature, city water and chloroform were added, and the organic layer was collected by performing a liquid separation operation. This organic layer was dehydrated with anhydrous sodium sulfate and then concentrated under reduced pressure to obtain a crude product. By recrystallizing the crude product using toluene/methanol = 1/1, 18.6 g (48% yield) of almost white powder of Intermediate 3 was obtained.
<실시예 1><Example 1>
고분자량 화합물 I 의 합성 ; Synthesis of high molecular weight compound I;
하기의 성분을, 질소 치환한 반응 용기에 첨가하고, 30 분간 질소 가스를 통기하였다.The following components were added to a reaction vessel purged with nitrogen, and nitrogen gas was ventilated for 30 minutes.
중간체 1 : 3.6 gIntermediate 1: 3.6 g
중간체 2 : 0.4 gIntermediate 2: 0.4 g
중간체 3 : 1.3 gIntermediate 3: 1.3 g
1,3-디브로모벤젠 : 1.7 g1,3-dibromobenzene: 1.7 g
인산삼칼륨 : 7.4 gTripotassium phosphate: 7.4 g
톨루엔 : 9 mlToluene: 9 ml
물 : 5 mlWater: 5 ml
1,4-디옥산 : 27 ml1,4-dioxane: 27 ml
이어서, 아세트산팔라듐 (II) 를 1.5 mg, 및 트리-o-톨릴포스핀 12.3 mg 을 첨가하여 가열하고, 88 ℃ 에서 8 시간 교반하였다. 이 후, 페닐보론산을 19 mg 첨가하여 1 시간 교반하고, 이어서 브로모벤젠 261 mg 을 첨가하여 1 시간 교반하였다. 톨루엔 50 ml, 5 wt% N,N-디에틸디티오카르바미드산나트륨 수용액 50 ml 를 첨가하여 가열하고, 환류하에서 2 시간 교반하였다. 실온까지 냉각한 후, 분액 조작을 실시함으로써 유기층을 채취하고, 포화 식염수로 3 회 세정하였다. 유기층을 무수 황산나트륨으로 탈수한 후, 감압하에서 농축함으로써 조 (粗) 폴리머를 얻었다. 조 폴리머를 톨루엔에 용해시켜, 실리카 겔을 첨가하여 흡착 정제를 실시하고, 여과하여 실리카 겔을 제거하였다. 얻어진 여과액을 감압하에서 농축하고, 건고물에 톨루엔 100 ml 를 첨가하여 용해시키고, n-헥산 300 ml 중에 적하하여, 얻어진 침전물을 여과 채취하였다. 이 조작을 4 회 반복하고, 건조시킴으로써 고분자량 화합물 I 을 3.2 g (수율 76 %) 얻었다.Next, 1.5 mg of palladium (II) acetate and 12.3 mg of tri-o-tolylphosphine were added, heated, and stirred at 88°C for 8 hours. After that, 19 mg of phenylboronic acid was added and stirred for 1 hour, and then 261 mg of bromobenzene was added and stirred for 1 hour. 50 ml of toluene and 50 ml of a 5 wt% aqueous solution of sodium N,N-diethyldithiocarbamidate were added, heated, and stirred under reflux for 2 hours. After cooling to room temperature, the organic layer was collected by carrying out a liquid separation operation and washed three times with saturated saline solution. The organic layer was dehydrated with anhydrous sodium sulfate and then concentrated under reduced pressure to obtain a crude polymer. The crude polymer was dissolved in toluene, silica gel was added, adsorption purification was performed, and silica gel was removed by filtration. The obtained filtrate was concentrated under reduced pressure, 100 ml of toluene was added to the dried product to dissolve it, and the solution was added dropwise to 300 ml of n-hexane, and the resulting precipitate was collected by filtration. This operation was repeated four times and dried to obtain 3.2 g (76% yield) of high molecular weight compound I.
고분자량 화합물 I 의 GPC 로 측정한 평균 분자량, 분산도는, 이하와 같았다.The average molecular weight and dispersion degree of high molecular weight compound I measured by GPC were as follows.
수평균 분자량 Mn (폴리스티렌 환산) : 64,000Number average molecular weight Mn (polystyrene equivalent): 64,000
중량 평균 분자량 Mw (폴리스티렌 환산) : 141,000Weight average molecular weight Mw (polystyrene equivalent): 141,000
분산도 (Mw/Mn) : 2.2Dispersion (Mw/Mn): 2.2
또, 고분자량 화합물 I 에 대해 NMR 측정을 실시하였다. 도 21 에 나타낸 1H-NMR 측정 결과로부터, 고분자량 화합물 I 의 화학 조성식은 하기와 같았다.In addition, NMR measurement was performed on high molecular weight Compound I. From the 1 H-NMR measurement results shown in Figure 21, the chemical composition of high molecular weight compound I was as follows.
상기 화학 조성으로부터 고분자 화합물 I 은, 반복 단위 A 를 60 몰% 포함하고, 반복 단위 B 를 30 몰% 포함하고, 반복 단위 Q 를 10 몰% 의 양으로 함유하고 있는 것을 알 수 있다. 또한, 각 구조 단위의 몰비는 1H-NMR 측정 결과로부터 얻어진 추산값이다.From the above chemical composition, it can be seen that the polymer compound I contains 60 mol% of the repeating unit A, 30 mol% of the repeating unit B, and 10 mol% of the repeating unit Q. In addition, the molar ratio of each structural unit is an estimated value obtained from 1 H-NMR measurement results.
<실시예 2><Example 2>
실시예 1 에서 합성된 고분자량 화합물 I 을 사용하여, ITO 기판 위에 막두께 80 ㎚ 의 도포막을 제작하고, 이온화 포텐셜 측정 장치 (스미토모 중기계 공업 주식회사 제조, PYS-202 형) 로 일함수를 측정하였다. 고분자량 화합물 I 의 일함수는 5.62 eV 였다.Using the high molecular weight compound I synthesized in Example 1, a coating film with a film thickness of 80 nm was produced on an ITO substrate, and the work function was measured with an ionization potential measurement device (Type PYS-202, manufactured by Sumitomo Heavy Industries, Ltd.) . The work function of high molecular weight compound I was 5.62 eV.
고분자량 화합물 I 은, NPD, TPD 등의 일반적인 정공 수송 재료가 가지는 일함수 5.4 eV 와 비교하여, 바람직한 에너지 준위를 나타내고 있어, 양호한 정공 수송 능력 및 정공 주입성을 갖고 있는 것을 알 수 있다.It can be seen that high molecular weight compound I exhibits a preferable energy level compared to the work function of 5.4 eV of common hole transport materials such as NPD and TPD, and has good hole transport ability and hole injection properties.
<실시예 3><Example 3>
실시예 1 에서 합성된 고분자량 화합물 I 을 사용하여, 석영 기판 위에 막두께 50 ㎚ 의 증착막을 제작하고, 시판되는 분광 광도계로 자외 가시 흡수 스펙트럼을 측정하고, 장파장측의 흡수단의 파장으로부터 밴드 갭을 산출하였다. 또, 일함수와 밴드 갭의 값으로부터 전자 친화력을 산출하였다. 고분자량 화합물 I 의 밴드 갭은 3.14 eV 이고, 산출된 전자 친화력은 2.48 eV 였다.Using the high molecular weight compound I synthesized in Example 1, a vapor-deposited film with a film thickness of 50 nm was produced on a quartz substrate, the ultraviolet-visible absorption spectrum was measured with a commercially available spectrophotometer, and the band gap was determined from the wavelength of the absorption edge on the long wavelength side. was calculated. Additionally, electron affinity was calculated from the work function and band gap values. The band gap of high molecular weight compound I was 3.14 eV, and the calculated electron affinity was 2.48 eV.
또한, 일반적인 정공 수송 재료인 NPD 의 밴드 갭은 3.00 eV 이고, 전자 친화력은 2.40 eV 이다.In addition, the band gap of NPD, a common hole transport material, is 3.00 eV and the electron affinity is 2.40 eV.
고분자량 화합물 I 은, NPD 와 비교하여 와이드 갭이고, 전자 친화력을 비교해도 바람직한 에너지 준위를 나타내고 있어, 양호한 전자 저지 능력을 갖고 있는 것을 알 수 있다.It can be seen that the high molecular weight compound I has a wide gap compared to NPD, shows a preferable energy level even when comparing electron affinity, and has a good electron blocking ability.
<실시예 4><Example 4>
도 20 에 나타내는 층 구조의 유기 EL 소자를, 이하의 수법에 의해 제작하였다.An organic EL device having a layered structure shown in FIG. 20 was produced by the following method.
구체적으로는, 막두께 50 ㎚ 의 ITO 를 성막한 유리 기판 (1) 을 유기 용매로 세정한 후에, UV/오존 처리에 의해 ITO 표면을 세정하였다. 이 유리 기판 (1) 에 형성되어 있는 투명 양극 (2) (ITO) 을 덮도록, PEDOT/PSS (Ossila 제조) 를 스핀 코트법에 의해 50 ㎚ 의 두께로 성막하고, 핫 플레이트 위에 200 ℃ 에서 10 분간 건조시켜 정공 주입층 (3) 을 형성하였다.Specifically, the glass substrate 1 on which ITO with a film thickness of 50 nm was formed was washed with an organic solvent, and then the ITO surface was cleaned by UV/ozone treatment. To cover the transparent anode 2 (ITO) formed on the glass substrate 1, PEDOT/PSS (manufactured by Ossila) was formed into a film with a thickness of 50 nm by spin coating, and placed on a hot plate at 200°C for 10 days. It was dried for a minute to form a hole injection layer (3).
하기 구조식의 고분자량 화합물 (HTM-1) 을, 톨루엔에 0.4 wt% 용해하여 도포액을 조제하였다. 상기와 같이 하여 정공 주입층 (3) 이 형성되어 있는 기판을, 건조 질소로 치환한 글로브 박스 내로 옮겨, 핫 플레이트 위에 230 ℃ 에서 10 분간 건조시킨 후에, 정공 주입층 (3) 위에, 상기의 도포액을 사용하여 스핀 코트법에 의해 15 ㎚ 의 두께의 도포층을 형성하고, 또한 핫 플레이트 위에 220 ℃ 에서 30 분간 건조시켜 정공 수송층 (4) 을 형성하였다.A coating liquid was prepared by dissolving 0.4 wt% of a high molecular weight compound (HTM-1) with the following structural formula in toluene. The substrate on which the hole injection layer 3 was formed as described above was transferred into a glove box purged with dry nitrogen, dried on a hot plate at 230° C. for 10 minutes, and then the above-described coating was applied onto the hole injection layer 3. Using the liquid, a 15 nm thick coating layer was formed by spin coating, and then dried on a hot plate at 220°C for 30 minutes to form the hole transport layer 4.
실시예 1 에서 얻어진 고분자량 화합물 I 을, 톨루엔에 0.4 wt% 용해하여 도포액을 조제하였다. 상기와 같이 하여 형성된 정공 수송층 (4) 위에, 상기의 도포액을 사용하여 스핀 코트법에 의해 15 ㎚ 의 두께의 도포층을 형성하고, 또한 핫 플레이트 위에서 220 ℃ 에서 30 분간 건조시켜 전자 저지층 (5) 을 형성하였다.A coating liquid was prepared by dissolving 0.4 wt% of high molecular weight compound I obtained in Example 1 in toluene. On the hole transport layer 4 formed as described above, a coating layer with a thickness of 15 nm was formed by spin coating using the coating liquid described above, and dried on a hot plate at 220° C. for 30 minutes to form an electron blocking layer ( 5) was formed.
상기와 같이 하여 전자 저지층 (5) 이 형성되어 있는 기판을, 진공 증착기 내에 장착하고 0.001 Pa 이하까지 감압하였다. 전자 저지층 (5) 위에, 청색 발광 재료 (EMD-1) 와 호스트 재료 (EMH-1) 의 2 원 증착에 의해, 막두께 34 ㎚ 의 발광층 (6) 을 형성하였다. 또한, 2 원 증착에서는, 증착 속도비를, EMD-1 : EMH-1 = 4 : 96 으로 하였다.The substrate on which the electron blocking layer 5 was formed as described above was placed in a vacuum evaporator and the pressure was reduced to 0.001 Pa or less. On the electron blocking layer 5, a light emitting layer 6 with a film thickness of 34 nm was formed by binary vapor deposition of a blue light emitting material (EMD-1) and a host material (EMH-1). In addition, in binary deposition, the deposition rate ratio was set to EMD-1:EMH-1 = 4:96.
상기에서 형성된 발광층 (6) 위에, 전자 수송 재료 (ETM-1) 및 (ETM-2) 를 사용한 2 원 증착에 의해, 막두께 20 ㎚ 의 전자 수송층 (7) 을 형성하였다. 또한, 2 원 증착에서는, 증착 속도비를, ETM-1 : ETM-2 = 50 : 50 으로 하였다.On the light-emitting layer 6 formed above, an electron transport layer 7 with a film thickness of 20 nm was formed by binary vapor deposition using electron transport materials (ETM-1) and (ETM-2). In addition, in binary deposition, the deposition rate ratio was set to ETM-1:ETM-2 = 50:50.
마지막으로, 알루미늄을 막두께 100 ㎚ 가 되도록 증착하여 음극 (8) 을 형성하였다.Finally, aluminum was deposited to a film thickness of 100 nm to form the cathode 8.
이와 같이, 투명 양극 (2), 정공 주입층 (3), 정공 수송층 (4), 전자 저지층 (5), 발광층 (6), 전자 수송층 (7) 및 음극 (8) 이 형성되어 있는 유리 기판을, 건조 질소로 치환한 글로브 박스 내로 이동하고, UV 경화 수지를 사용하여 봉지용의 다른 유리 기판을 첩합하여, 유기 EL 소자로 하였다. 제작한 유기 EL 소자에 대하여, 대기 중, 상온에서 특성 측정을 실시하였다. 또, 제작한 유기 EL 소자에 직류 전압을 인가했을 때의 발광 특성을 측정하였다. 상기의 측정 결과는, 표 1 에 나타냈다.In this way, the glass substrate on which the transparent anode (2), hole injection layer (3), hole transport layer (4), electron blocking layer (5), light emitting layer (6), electron transport layer (7) and cathode (8) is formed. was moved into a glove box replaced with dry nitrogen, and another glass substrate for sealing was bonded using UV curing resin to form an organic EL device. For the produced organic EL device, characteristics were measured in the air and at room temperature. Additionally, the light emission characteristics were measured when a direct current voltage was applied to the manufactured organic EL device. The above measurement results are shown in Table 1.
<비교예 1><Comparative Example 1>
고분자량 화합물 I 대신에, TFB (정공 수송성 폴리머) 를 톨루엔에 0.4 wt% 용해하여 조제한 도포액을 사용하여 전자 저지층 (5) 을 형성한 것 이외에는, 실시예 4 와 완전히 동일하게 하여 유기 EL 소자를 제작하였다.An organic EL device was manufactured in exactly the same manner as in Example 4, except that instead of the high molecular weight compound I, the electron blocking layer 5 was formed using a coating solution prepared by dissolving 0.4 wt% of TFB (hole transport polymer) in toluene. was produced.
TFB (정공 수송성 폴리머) 는, 폴리[(9,9-디옥틸플루오레닐-2,7-디일)-co-(4,4'-(N-(4-sec-부틸페닐))디페닐아민] (American Dye Source 사 제조, Hole Transport Polymer ADS259BE) 이다. 이 비교예 1 의 유기 EL 소자에 대하여, 실시예 4 와 마찬가지로 각종 특성을 평가하고, 그 결과를 표 1 에 나타냈다.TFB (hole transport polymer) is poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenyl amine] (Hole Transport Polymer ADS259BE, manufactured by American Dye Source.) Regarding the organic EL device of Comparative Example 1, various characteristics were evaluated in the same manner as Example 4, and the results are shown in Table 1.
각종 특성의 평가에 있어서, 전압, 휘도, 발광 효율 및 전력 효율은, 전류 밀도 10 ㎃/㎠ 의 전류를 흘렸을 때의 값이다. 또, 소자 수명은, 발광 개시시의 발광 휘도 (초기 휘도) 를 700 cd/㎡ 로 하여 정전류 구동을 실시했을 때, 발광 휘도가 560 cd/㎡ (초기 휘도를 100 % 로 했을 때의 80 % 에 상당 : 80 % 감쇠) 로 감쇠할 때까지의 시간으로서 측정하였다.In the evaluation of various characteristics, voltage, luminance, luminous efficiency, and power efficiency are values when a current with a current density of 10 mA/cm2 is passed. In addition, the device life is as follows: When constant current driving is performed with the emission luminance (initial luminance) at the start of light emission being 700 cd/m2, the emission luminance is 560 cd/m2 (80% when the initial luminance is 100%). It was measured as the time until attenuation (equivalent: 80% attenuation).
표 1 에 나타내는 바와 같이, 전류 밀도 10 ㎃/㎠ 의 전류를 흘렸을 때의 발광 효율은, 비교예 1 의 유기 EL 소자의 5.50 cd/A 에 대하여, 실시예 4 의 유기 EL 소자에서는 7.52 cd/A 로 고효율이었다. 또, 소자 수명 (80 % 감쇠) 에 있어서는, 비교예 1 의 유기 EL 소자의 11 시간에 대하여, 실시예 4 의 유기 EL 소자에서는 136 시간으로 장수명이었다.As shown in Table 1, the luminous efficiency when a current with a current density of 10 mA/cm2 is passed is 7.52 cd/A for the organic EL device of Example 4, compared to 5.50 cd/A for the organic EL device of Comparative Example 1. It was highly efficient. Additionally, in terms of device life (80% attenuation), the organic EL device of Example 4 had a longer life of 136 hours compared to 11 hours for the organic EL device of Comparative Example 1.
본 발명의 고분자량 화합물은, 정공 수송 능력이 높고, 전자 저지 능력이 우수하기 때문에, 도포형 유기 EL 소자용의 화합물로서 우수하다. 그 화합물을 사용하여 도포형 유기 EL 소자를 제작함으로써, 높은 발광 효율 및 전력 효율을 얻을 수 있음과 함께, 내구성을 개선시킬 수 있다. 예를 들어, 가정 전화 제품이나 조명의 용도로의 전개가 가능해졌다.The high molecular weight compound of the present invention has a high hole transport ability and an excellent electron blocking ability, and is therefore excellent as a compound for application-type organic EL devices. By producing a coating-type organic EL device using the compound, high luminous efficiency and power efficiency can be obtained, and durability can be improved. For example, it has become possible to deploy it in home telephone products and lighting applications.
1 : 유리 기판
2 : 투명 양극
3 : 정공 주입층
4 : 정공 수송층
5 : 전자 저지층
6 : 발광층
7 : 전자 수송층
8 : 음극1: Glass substrate
2: Transparent anode
3: hole injection layer
4: hole transport layer
5: Electronic blocking layer
6: light emitting layer
7: electron transport layer
8: cathode
Claims (11)
식 중,
R1 및 R3 은, 각각 독립적으로, 수소 원자, 중수소 원자, 시아노기, 니트로기, 할로겐 원자, 또는 탄소수가 40 이하인, 알킬기, 알킬옥시기, 시클로알킬기, 시클로알킬옥시기, 알케닐기, 혹은 아릴옥시기를 나타낸다.
a, b 및 c 는, 이하의 정수이다.
a = 0, 1, 2 또는 3
b = 0, 1, 2, 3 또는 4
c = 0 또는 1
R2 는, 각각 독립적으로, 탄소수가 3 ∼ 40 인, 알킬기, 알킬옥시기, 또는 시클로알킬기를 나타낸다.
L 은, 페닐렌기를 나타내고, n 은 0 ∼ 3 의 정수를 나타낸다.
X 는, 각각 독립적으로, 수소 원자, 아미노기, 1 가의 아릴기, 또는 1 가의 헤테로아릴기를 나타낸다.
Y 는, 산소 원자 (O), 황 원자 (S), 또는 하기 식 (3) 으로 나타내는 기이다.
식 중의 R4 는, 치환 혹은 무치환의 아릴기, 또는 치환 혹은 무치환의 알킬기를 나타낸다.A high molecular weight compound comprising a repeating unit A represented by the following general formula (1) and a repeating unit B represented by the following general formula (2), and having a weight average molecular weight of 10,000 or more and less than 1,000,000 in terms of polystyrene.
During the ceremony,
R 1 and R 3 are each independently a hydrogen atom, a deuterium atom, a cyano group, a nitro group, a halogen atom, or an alkyl group, an alkyloxy group, a cycloalkyl group, a cycloalkyloxy group, an alkenyl group, or an alkyl group having 40 or less carbon atoms. Represents an aryloxy group.
a, b and c are the following integers.
a = 0, 1, 2 or 3
b = 0, 1, 2, 3 or 4
c = 0 or 1
R 2 each independently represents an alkyl group, an alkyloxy group, or a cycloalkyl group having 3 to 40 carbon atoms.
L represents a phenylene group, and n represents an integer of 0 to 3.
X each independently represents a hydrogen atom, an amino group, a monovalent aryl group, or a monovalent heteroaryl group.
Y is an oxygen atom (O), a sulfur atom (S), or a group represented by the following formula (3).
R 4 in the formula represents a substituted or unsubstituted aryl group or a substituted or unsubstituted alkyl group.
상기 일반식 (1) 및 (2) 에 있어서, R1 및 R3 이 수소 원자인 고분자량 화합물.According to claim 1,
A high molecular weight compound in the general formulas (1) and (2) above, wherein R 1 and R 3 are hydrogen atoms.
상기 일반식 (1) 에 있어서, R2 가 탄소수 3 ∼ 40 의 알킬기인 고분자량 화합물.The method of claim 1 or 2,
A high molecular weight compound in the general formula (1) above, wherein R 2 is an alkyl group having 3 to 40 carbon atoms.
상기 일반식 (1) 및 (2) 에 있어서, X 가 디페닐아미노기, 페닐기, 나프틸기, 디벤조푸라닐기, 디벤조티에닐기, 페난트레닐기, 플루오레닐기, 카르바졸릴기, 인데노카르바졸릴기, 또는 아크리디닐기인 고분자량 화합물.The method of claim 1 or 2,
In the above general formulas (1) and (2), A high molecular weight compound that is a bazolyl group or an acridinyl group.
하기 일반식 (4) 로 나타내는, 열가교성 구조 단위 Q 를 갖는 반복 단위를 포함하는 고분자량 화합물.
식 중,
R3, X 및 a 는, 모두 일반식 (1) 에서 나타낸 것과 동일한 정의이다.The method of claim 1 or 2,
A high molecular weight compound containing a repeating unit having a thermally crosslinkable structural unit Q, represented by the following general formula (4).
During the ceremony,
R 3 , X and a all have the same definition as shown in General Formula (1).
상기 일반식 (4) 에 있어서, 열가교성 구조 단위 Q 가, 하기 일반식 (5a) ∼ (5af) 에 나타내는 구조인 고분자량 화합물.
식 중,
R1, R2, a 및 b 는, 모두 일반식 (1) 에서 나타낸 것과 동일한 정의이다.According to claim 5,
A high molecular weight compound in the general formula (4) above, wherein the thermally crosslinkable structural unit Q is a structure represented by the following general formulas (5a) to (5af).
During the ceremony,
R 1 , R 2 , a and b all have the same definition as shown in General Formula (1).
상기 유기층이 정공 수송층인, 유기 일렉트로 루미네선스 소자.According to claim 7,
An organic electroluminescence device wherein the organic layer is a hole transport layer.
상기 유기층이 전자 저지층인, 유기 일렉트로 루미네선스 소자.According to claim 7,
An organic electroluminescence device, wherein the organic layer is an electron blocking layer.
상기 유기층이 정공 주입층인, 유기 일렉트로 루미네선스 소자.According to claim 7,
An organic electroluminescence device wherein the organic layer is a hole injection layer.
상기 유기층이 발광층인, 유기 일렉트로 루미네선스 소자.According to claim 7,
An organic electroluminescence device wherein the organic layer is a light-emitting layer.
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WO2005049546A1 (en) | 2003-11-14 | 2005-06-02 | Sumitomo Chemical Company, Limited | Halogenated bisdiarylaminopolycylic aromatic compounds and polymers thereof |
WO2005059951A2 (en) | 2003-12-19 | 2005-06-30 | Cambridge Display Technology Limited | Optical device comprising a charge transport layer of insoluble organic material and method for the production thereof |
JP2005272834A (en) | 2004-02-26 | 2005-10-06 | Sumitomo Chemical Co Ltd | Polymer compound and polymer light-emitting device using the same |
JP2007119763A (en) | 2005-09-29 | 2007-05-17 | Sumitomo Chemical Co Ltd | Polymeric material and polymeric light emitting device |
JP2007162009A (en) | 2005-11-18 | 2007-06-28 | Sumitomo Chemical Co Ltd | Polymer compound and polymer luminescent element produced by using the same |
JP2007177225A (en) | 2005-12-01 | 2007-07-12 | Sumitomo Chemical Co Ltd | Polymeric compound and polymeric light emitting element using the same |
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WO2005049546A1 (en) | 2003-11-14 | 2005-06-02 | Sumitomo Chemical Company, Limited | Halogenated bisdiarylaminopolycylic aromatic compounds and polymers thereof |
WO2005059951A2 (en) | 2003-12-19 | 2005-06-30 | Cambridge Display Technology Limited | Optical device comprising a charge transport layer of insoluble organic material and method for the production thereof |
JP2005272834A (en) | 2004-02-26 | 2005-10-06 | Sumitomo Chemical Co Ltd | Polymer compound and polymer light-emitting device using the same |
JP2007119763A (en) | 2005-09-29 | 2007-05-17 | Sumitomo Chemical Co Ltd | Polymeric material and polymeric light emitting device |
JP2007162009A (en) | 2005-11-18 | 2007-06-28 | Sumitomo Chemical Co Ltd | Polymer compound and polymer luminescent element produced by using the same |
JP2007177225A (en) | 2005-12-01 | 2007-07-12 | Sumitomo Chemical Co Ltd | Polymeric compound and polymeric light emitting element using the same |
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