KR20230171848A - Tetramethylbiphenol epoxy resin and method for preparing the same - Google Patents
Tetramethylbiphenol epoxy resin and method for preparing the same Download PDFInfo
- Publication number
- KR20230171848A KR20230171848A KR1020220162189A KR20220162189A KR20230171848A KR 20230171848 A KR20230171848 A KR 20230171848A KR 1020220162189 A KR1020220162189 A KR 1020220162189A KR 20220162189 A KR20220162189 A KR 20220162189A KR 20230171848 A KR20230171848 A KR 20230171848A
- Authority
- KR
- South Korea
- Prior art keywords
- epoxy resin
- tetramethylbiphenol
- type epoxy
- acid
- formula
- Prior art date
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- 239000003822 epoxy resin Substances 0.000 title claims abstract description 202
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 202
- CZAZXHQSSWRBHT-UHFFFAOYSA-N 2-(2-hydroxyphenyl)-3,4,5,6-tetramethylphenol Chemical compound OC1=C(C)C(C)=C(C)C(C)=C1C1=CC=CC=C1O CZAZXHQSSWRBHT-UHFFFAOYSA-N 0.000 title description 18
- 238000000034 method Methods 0.000 title description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 150000001768 cations Chemical class 0.000 claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims description 43
- 239000003795 chemical substances by application Substances 0.000 claims description 40
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 37
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 27
- 229920005989 resin Polymers 0.000 claims description 27
- 239000011347 resin Substances 0.000 claims description 27
- -1 sodium cations Chemical class 0.000 claims description 23
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 22
- 239000011256 inorganic filler Substances 0.000 claims description 15
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 15
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 14
- 150000003944 halohydrins Chemical class 0.000 claims description 14
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 claims description 12
- 150000008065 acid anhydrides Chemical class 0.000 claims description 9
- 235000006408 oxalic acid Nutrition 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 150000001412 amines Chemical class 0.000 claims description 8
- PXSSNPBEHHJLDH-UHFFFAOYSA-N 2,3,4,5-tetramethylphenol Chemical compound CC1=CC(O)=C(C)C(C)=C1C PXSSNPBEHHJLDH-UHFFFAOYSA-N 0.000 claims description 7
- 239000004593 Epoxy Substances 0.000 claims description 7
- 229910052708 sodium Inorganic materials 0.000 claims description 7
- 239000011734 sodium Substances 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- 150000002460 imidazoles Chemical class 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims description 4
- FOJJCOHOLNJIHE-UHFFFAOYSA-N aluminum;azane Chemical compound N.[Al+3] FOJJCOHOLNJIHE-UHFFFAOYSA-N 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 claims description 4
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 claims description 4
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 claims description 4
- 150000001735 carboxylic acids Chemical class 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 230000002194 synthesizing effect Effects 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- WZHHYIOUKQNLQM-UHFFFAOYSA-N 3,4,5,6-tetrachlorophthalic acid Chemical compound OC(=O)C1=C(Cl)C(Cl)=C(Cl)C(Cl)=C1C(O)=O WZHHYIOUKQNLQM-UHFFFAOYSA-N 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- IFDVQVHZEKPUSC-UHFFFAOYSA-N cyclohex-3-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCC=CC1C(O)=O IFDVQVHZEKPUSC-UHFFFAOYSA-N 0.000 claims description 2
- QSAWQNUELGIYBC-UHFFFAOYSA-N cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1C(O)=O QSAWQNUELGIYBC-UHFFFAOYSA-N 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 claims description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 claims 2
- 239000001361 adipic acid Substances 0.000 claims 1
- 235000011037 adipic acid Nutrition 0.000 claims 1
- 238000000746 purification Methods 0.000 abstract description 10
- 238000001723 curing Methods 0.000 description 59
- 238000006243 chemical reaction Methods 0.000 description 34
- 239000000047 product Substances 0.000 description 30
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 238000010521 absorption reaction Methods 0.000 description 18
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 14
- 239000007822 coupling agent Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 10
- 229920003986 novolac Polymers 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 239000007983 Tris buffer Substances 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 9
- 239000012776 electronic material Substances 0.000 description 9
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 9
- 230000035484 reaction time Effects 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- 150000003003 phosphines Chemical class 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 150000008064 anhydrides Chemical class 0.000 description 6
- 235000010290 biphenyl Nutrition 0.000 description 6
- 239000004305 biphenyl Substances 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- 125000003700 epoxy group Chemical group 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 230000009477 glass transition Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 6
- 150000002989 phenols Chemical class 0.000 description 6
- 230000000704 physical effect Effects 0.000 description 6
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010292 electrical insulation Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 5
- 239000005011 phenolic resin Substances 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 150000003512 tertiary amines Chemical class 0.000 description 5
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 4
- 229930185605 Bisphenol Natural products 0.000 description 4
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 3
- 150000004982 aromatic amines Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000013329 compounding Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 150000004714 phosphonium salts Chemical class 0.000 description 3
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 3
- 229960001755 resorcinol Drugs 0.000 description 3
- 238000007086 side reaction Methods 0.000 description 3
- 229910001415 sodium ion Inorganic materials 0.000 description 3
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-naphthoquinone Chemical compound C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 description 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- NADHCXOXVRHBHC-UHFFFAOYSA-N 2,3-dimethoxycyclohexa-2,5-diene-1,4-dione Chemical compound COC1=C(OC)C(=O)C=CC1=O NADHCXOXVRHBHC-UHFFFAOYSA-N 0.000 description 2
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 2
- ZTMADXFOCUXMJE-UHFFFAOYSA-N 2-methylbenzene-1,3-diol Chemical compound CC1=C(O)C=CC=C1O ZTMADXFOCUXMJE-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 2
- CWLKGDAVCFYWJK-UHFFFAOYSA-N 3-aminophenol Chemical compound NC1=CC=CC(O)=C1 CWLKGDAVCFYWJK-UHFFFAOYSA-N 0.000 description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 2
- RGHHSNMVTDWUBI-UHFFFAOYSA-N 4-hydroxybenzaldehyde Chemical compound OC1=CC=C(C=O)C=C1 RGHHSNMVTDWUBI-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical class O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- MLUCVPSAIODCQM-NSCUHMNNSA-N crotonaldehyde Chemical compound C\C=C\C=O MLUCVPSAIODCQM-NSCUHMNNSA-N 0.000 description 2
- MLUCVPSAIODCQM-UHFFFAOYSA-N crotonaldehyde Natural products CC=CC=O MLUCVPSAIODCQM-UHFFFAOYSA-N 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 235000019256 formaldehyde Nutrition 0.000 description 2
- 239000000295 fuel oil Substances 0.000 description 2
- 229940015043 glyoxal Drugs 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 2
- BNJOQKFENDDGSC-UHFFFAOYSA-N octadecanedioic acid Chemical compound OC(=O)CCCCCCCCCCCCCCCCC(O)=O BNJOQKFENDDGSC-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 239000004848 polyfunctional curative Substances 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 150000003505 terpenes Chemical class 0.000 description 2
- 235000007586 terpenes Nutrition 0.000 description 2
- CNHDIAIOKMXOLK-UHFFFAOYSA-N toluquinol Chemical compound CC1=CC(O)=CC=C1O CNHDIAIOKMXOLK-UHFFFAOYSA-N 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- KNDQHSIWLOJIGP-UMRXKNAASA-N (3ar,4s,7r,7as)-rel-3a,4,7,7a-tetrahydro-4,7-methanoisobenzofuran-1,3-dione Chemical compound O=C1OC(=O)[C@@H]2[C@H]1[C@]1([H])C=C[C@@]2([H])C1 KNDQHSIWLOJIGP-UMRXKNAASA-N 0.000 description 1
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- LTQBNYCMVZQRSD-UHFFFAOYSA-N (4-ethenylphenyl)-trimethoxysilane Chemical compound CO[Si](OC)(OC)C1=CC=C(C=C)C=C1 LTQBNYCMVZQRSD-UHFFFAOYSA-N 0.000 description 1
- QJIMTLTYXBDJFC-UHFFFAOYSA-N (4-methylphenyl)-diphenylphosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 QJIMTLTYXBDJFC-UHFFFAOYSA-N 0.000 description 1
- XBTRYWRVOBZSGM-UHFFFAOYSA-N (4-methylphenyl)methanediamine Chemical compound CC1=CC=C(C(N)N)C=C1 XBTRYWRVOBZSGM-UHFFFAOYSA-N 0.000 description 1
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- WBODDOZXDKQEFS-UHFFFAOYSA-N 1,2,3,4-tetramethyl-5-phenylbenzene Chemical group CC1=C(C)C(C)=CC(C=2C=CC=CC=2)=C1C WBODDOZXDKQEFS-UHFFFAOYSA-N 0.000 description 1
- UTCOUOISVRSLSH-UHFFFAOYSA-N 1,2-Anthracenediol Chemical compound C1=CC=CC2=CC3=C(O)C(O)=CC=C3C=C21 UTCOUOISVRSLSH-UHFFFAOYSA-N 0.000 description 1
- NPRZDDJMZQXFBQ-UHFFFAOYSA-N 1,2-dihydroanthracene-9,10-diol Chemical compound C1=CC=C2C(O)=C(CCC=C3)C3=C(O)C2=C1 NPRZDDJMZQXFBQ-UHFFFAOYSA-N 0.000 description 1
- IEVIXDLZSRLUHW-UHFFFAOYSA-N 1,2-diphenylethene-1,2-diol Chemical class C=1C=CC=CC=1C(O)=C(O)C1=CC=CC=C1 IEVIXDLZSRLUHW-UHFFFAOYSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 229940005561 1,4-benzoquinone Drugs 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- UXPLDFBGDZPFGE-UHFFFAOYSA-N 1-(1,2-dicarboxyethyl)-1-methyl-3,4-dihydronaphthalene-2,2-dicarboxylic acid Chemical compound C1=CC=C2CCC(C(O)=O)(C(O)=O)C(C)(C(CC(O)=O)C(O)=O)C2=C1 UXPLDFBGDZPFGE-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- XZKLXPPYISZJCV-UHFFFAOYSA-N 1-benzyl-2-phenylimidazole Chemical compound C1=CN=C(C=2C=CC=CC=2)N1CC1=CC=CC=C1 XZKLXPPYISZJCV-UHFFFAOYSA-N 0.000 description 1
- WGCYRFWNGRMRJA-UHFFFAOYSA-N 1-ethylpiperazine Chemical compound CCN1CCNCC1 WGCYRFWNGRMRJA-UHFFFAOYSA-N 0.000 description 1
- LHENQXAPVKABON-UHFFFAOYSA-N 1-methoxypropan-1-ol Chemical compound CCC(O)OC LHENQXAPVKABON-UHFFFAOYSA-N 0.000 description 1
- PMUPSYZVABJEKC-UHFFFAOYSA-N 1-methylcyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1(C)CCCCC1C(O)=O PMUPSYZVABJEKC-UHFFFAOYSA-N 0.000 description 1
- IEKHISJGRIEHRE-UHFFFAOYSA-N 16-methylheptadecanoic acid;propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O IEKHISJGRIEHRE-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- ZUZAETTVAMCNTO-UHFFFAOYSA-N 2,3-dibutylbenzene-1,4-diol Chemical compound CCCCC1=C(O)C=CC(O)=C1CCCC ZUZAETTVAMCNTO-UHFFFAOYSA-N 0.000 description 1
- ZEGDFCCYTFPECB-UHFFFAOYSA-N 2,3-dimethoxy-1,4-benzoquinone Natural products C1=CC=C2C(=O)C(OC)=C(OC)C(=O)C2=C1 ZEGDFCCYTFPECB-UHFFFAOYSA-N 0.000 description 1
- AIACLXROWHONEE-UHFFFAOYSA-N 2,3-dimethylcyclohexa-2,5-diene-1,4-dione Chemical compound CC1=C(C)C(=O)C=CC1=O AIACLXROWHONEE-UHFFFAOYSA-N 0.000 description 1
- BAHPQISAXRFLCL-UHFFFAOYSA-N 2,4-Diaminoanisole Chemical compound COC1=CC=C(N)C=C1N BAHPQISAXRFLCL-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- YXOKJIRTNWHPFS-UHFFFAOYSA-N 2,5-dimethylhexane-1,6-diamine Chemical compound NCC(C)CCC(C)CN YXOKJIRTNWHPFS-UHFFFAOYSA-N 0.000 description 1
- SENUUPBBLQWHMF-UHFFFAOYSA-N 2,6-dimethylcyclohexa-2,5-diene-1,4-dione Chemical compound CC1=CC(=O)C=C(C)C1=O SENUUPBBLQWHMF-UHFFFAOYSA-N 0.000 description 1
- FUIQBJHUESBZNU-UHFFFAOYSA-N 2-[(dimethylazaniumyl)methyl]phenolate Chemical compound CN(C)CC1=CC=CC=C1O FUIQBJHUESBZNU-UHFFFAOYSA-N 0.000 description 1
- BYACHAOCSIPLCM-UHFFFAOYSA-N 2-[2-[bis(2-hydroxyethyl)amino]ethyl-(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(CCO)CCN(CCO)CCO BYACHAOCSIPLCM-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical class NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- HJXPGCTYMKCLTR-UHFFFAOYSA-N 2-bromo-9,9-diethylfluorene Chemical compound C1=C(Br)C=C2C(CC)(CC)C3=CC=CC=C3C2=C1 HJXPGCTYMKCLTR-UHFFFAOYSA-N 0.000 description 1
- VTWDKFNVVLAELH-UHFFFAOYSA-N 2-methylcyclohexa-2,5-diene-1,4-dione Chemical compound CC1=CC(=O)C=CC1=O VTWDKFNVVLAELH-UHFFFAOYSA-N 0.000 description 1
- RLQZIECDMISZHS-UHFFFAOYSA-N 2-phenylcyclohexa-2,5-diene-1,4-dione Chemical compound O=C1C=CC(=O)C(C=2C=CC=CC=2)=C1 RLQZIECDMISZHS-UHFFFAOYSA-N 0.000 description 1
- UCCGHLMDDOUWAF-UHFFFAOYSA-N 2-phenylimidazole-1-carbonitrile Chemical compound N#CN1C=CN=C1C1=CC=CC=C1 UCCGHLMDDOUWAF-UHFFFAOYSA-N 0.000 description 1
- OHPBKUJGDFXDRM-UHFFFAOYSA-N 3,4-diethyl-5-(2-phenylpropan-2-yl)benzene-1,2-diamine Chemical compound CCC1=C(N)C(N)=CC(C(C)(C)C=2C=CC=CC=2)=C1CC OHPBKUJGDFXDRM-UHFFFAOYSA-N 0.000 description 1
- MBWYRMCXWROJMP-UHFFFAOYSA-N 3-(1-aminoethyl)aniline Chemical compound CC(N)C1=CC=CC(N)=C1 MBWYRMCXWROJMP-UHFFFAOYSA-N 0.000 description 1
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 1
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 description 1
- ZDBWYUOUYNQZBM-UHFFFAOYSA-N 3-(aminomethyl)aniline Chemical compound NCC1=CC=CC(N)=C1 ZDBWYUOUYNQZBM-UHFFFAOYSA-N 0.000 description 1
- WVRNUXJQQFPNMN-VAWYXSNFSA-N 3-[(e)-dodec-1-enyl]oxolane-2,5-dione Chemical compound CCCCCCCCCC\C=C\C1CC(=O)OC1=O WVRNUXJQQFPNMN-VAWYXSNFSA-N 0.000 description 1
- ANOPCGQVRXJHHD-UHFFFAOYSA-N 3-[3-(3-aminopropyl)-2,4,8,10-tetraoxaspiro[5.5]undecan-9-yl]propan-1-amine Chemical compound C1OC(CCCN)OCC21COC(CCCN)OC2 ANOPCGQVRXJHHD-UHFFFAOYSA-N 0.000 description 1
- ZYAASQNKCWTPKI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propan-1-amine Chemical compound CO[Si](C)(OC)CCCN ZYAASQNKCWTPKI-UHFFFAOYSA-N 0.000 description 1
- 229940018563 3-aminophenol Drugs 0.000 description 1
- XYUINKARGUCCQJ-UHFFFAOYSA-N 3-imino-n-propylpropan-1-amine Chemical compound CCCNCCC=N XYUINKARGUCCQJ-UHFFFAOYSA-N 0.000 description 1
- RDNPPYMJRALIIH-UHFFFAOYSA-N 3-methylcyclohex-3-ene-1,1,2,2-tetracarboxylic acid Chemical compound CC1=CCCC(C(O)=O)(C(O)=O)C1(C(O)=O)C(O)=O RDNPPYMJRALIIH-UHFFFAOYSA-N 0.000 description 1
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- WRYUIOMVOKUIHL-UHFFFAOYSA-N 4,5-dichloro-3-(dichloromethyl)-6-methylbenzene-1,2-diamine Chemical compound CC1=C(N)C(N)=C(C(Cl)Cl)C(Cl)=C1Cl WRYUIOMVOKUIHL-UHFFFAOYSA-N 0.000 description 1
- CDSPOZXUDJUBEZ-UHFFFAOYSA-N 4-(1-aminoethyl)aniline Chemical compound CC(N)C1=CC=C(N)C=C1 CDSPOZXUDJUBEZ-UHFFFAOYSA-N 0.000 description 1
- XFGDOQVDCBRDDP-UHFFFAOYSA-N 4-(benzenesulfonyl)benzene-1,3-diamine Chemical compound NC1=CC(N)=CC=C1S(=O)(=O)C1=CC=CC=C1 XFGDOQVDCBRDDP-UHFFFAOYSA-N 0.000 description 1
- KXEPRLUGFAULQX-UHFFFAOYSA-N 4-[2,5-di(propan-2-yl)phenyl]aniline Chemical compound CC(C)C1=CC=C(C(C)C)C(C=2C=CC(N)=CC=2)=C1 KXEPRLUGFAULQX-UHFFFAOYSA-N 0.000 description 1
- UHNUHZHQLCGZDA-UHFFFAOYSA-N 4-[2-(4-aminophenyl)ethyl]aniline Chemical compound C1=CC(N)=CC=C1CCC1=CC=C(N)C=C1 UHNUHZHQLCGZDA-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- XBWHBPMCIGBGTA-UHFFFAOYSA-N 5-methyl-2-oxaspiro[3.5]non-5-ene-1,3-dione Chemical compound CC1=CCCCC11C(=O)OC1=O XBWHBPMCIGBGTA-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241001122767 Theaceae Species 0.000 description 1
- XZAHJRZBUWYCBM-UHFFFAOYSA-N [1-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1(CN)CCCCC1 XZAHJRZBUWYCBM-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
- UMHKOAYRTRADAT-UHFFFAOYSA-N [hydroxy(octoxy)phosphoryl] octyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OP(O)(=O)OCCCCCCCC UMHKOAYRTRADAT-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000005036 alkoxyphenyl group Chemical group 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- MRNZSTMRDWRNNR-UHFFFAOYSA-N bis(hexamethylene)triamine Chemical compound NCCCCCCNCCCCCCN MRNZSTMRDWRNNR-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- CRGRWBQSZSQVIE-UHFFFAOYSA-N diazomethylbenzene Chemical compound [N-]=[N+]=CC1=CC=CC=C1 CRGRWBQSZSQVIE-UHFFFAOYSA-N 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- HTDKEJXHILZNPP-UHFFFAOYSA-N dioctyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OCCCCCCCC HTDKEJXHILZNPP-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- XHWQYYPUYFYELO-UHFFFAOYSA-N ditridecyl phosphite Chemical compound CCCCCCCCCCCCCOP([O-])OCCCCCCCCCCCCC XHWQYYPUYFYELO-UHFFFAOYSA-N 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- SLAFUPJSGFVWPP-UHFFFAOYSA-M ethyl(triphenyl)phosphanium;iodide Chemical compound [I-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CC)C1=CC=CC=C1 SLAFUPJSGFVWPP-UHFFFAOYSA-M 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N hydroquinone methyl ether Natural products COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- ASHGTJPOSUFTGB-UHFFFAOYSA-N methyl resorcinol Natural products COC1=CC=CC(O)=C1 ASHGTJPOSUFTGB-UHFFFAOYSA-N 0.000 description 1
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- LSHROXHEILXKHM-UHFFFAOYSA-N n'-[2-[2-[2-(2-aminoethylamino)ethylamino]ethylamino]ethyl]ethane-1,2-diamine Chemical compound NCCNCCNCCNCCNCCN LSHROXHEILXKHM-UHFFFAOYSA-N 0.000 description 1
- ZETYUTMSJWMKNQ-UHFFFAOYSA-N n,n',n'-trimethylhexane-1,6-diamine Chemical compound CNCCCCCCN(C)C ZETYUTMSJWMKNQ-UHFFFAOYSA-N 0.000 description 1
- RIWRFSMVIUAEBX-UHFFFAOYSA-N n-methyl-1-phenylmethanamine Chemical compound CNCC1=CC=CC=C1 RIWRFSMVIUAEBX-UHFFFAOYSA-N 0.000 description 1
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical group [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical class S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- HWCKGOZZJDHMNC-UHFFFAOYSA-M tetraethylammonium bromide Chemical compound [Br-].CC[N+](CC)(CC)CC HWCKGOZZJDHMNC-UHFFFAOYSA-M 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 239000003021 water soluble solvent Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/24—Di-epoxy compounds carbocyclic
- C08G59/245—Di-epoxy compounds carbocyclic aromatic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/02—Polycondensates containing more than one epoxy group per molecule
- C08G59/04—Polycondensates containing more than one epoxy group per molecule of polyhydroxy compounds with epihalohydrins or precursors thereof
- C08G59/06—Polycondensates containing more than one epoxy group per molecule of polyhydroxy compounds with epihalohydrins or precursors thereof of polyhydric phenols
- C08G59/063—Polycondensates containing more than one epoxy group per molecule of polyhydroxy compounds with epihalohydrins or precursors thereof of polyhydric phenols with epihalohydrins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Epoxy Resins (AREA)
Abstract
본 발명은 테트라메틸비페놀형 에폭시 수지 및 이의 제조방법에 관한 것으로서, 보다 상세하게는, 상기 테트라메틸비페놀형 에폭시 수지 제조 공정 중에 카르복실산을 이용한 정제 공정을 추가하여 상기 테트라메틸비페놀형 에폭시 수지에 포함된 금속 양이온의 함량을 저하시킬 수 있고, 이에 따라 상기 테트라메틸비페놀형 에폭시 수지의 순도를 향상시킬 수 있다.The present invention relates to a tetramethylbiphenol-type epoxy resin and a manufacturing method thereof. More specifically, the present invention relates to a tetramethylbiphenol-type epoxy resin manufacturing process by adding a purification process using carboxylic acid to the tetramethylbiphenol-type epoxy resin. The content of metal cations contained in the epoxy resin can be reduced, and thus the purity of the tetramethylbiphenol-type epoxy resin can be improved.
Description
본 발명은 고순도 테트라메틸비페놀형 에폭시 수지 및 이의 제조방법에 관한 것이다.The present invention relates to a high-purity tetramethylbiphenol-type epoxy resin and a method for producing the same.
에폭시 수지는 우수한 경화 물성 및 취급의 용이성으로 인하여 다양한 용도로 활용되고 있다. 특히, 상기 에폭시 수지를 경화시키면 기계적 성질, 내열성 또는 전기적 성질이 우수한 경화물이 형성될 수 있어, 접착제, 도료, 전기·전자 재료 등의 폭넓은 분야에서 사용되고 있다.Epoxy resins are used for various purposes due to their excellent curing properties and ease of handling. In particular, when the epoxy resin is cured, a cured product with excellent mechanical properties, heat resistance, or electrical properties can be formed, and is used in a wide range of fields such as adhesives, paints, and electrical and electronic materials.
전기·전자 재료 분야에 사용되는 물질은 저유전율 및 전기절연 특성이 요구된다. 전기·전자 재료 분야 중에서도 반도체 밀봉재 분야에서는, 테트라메틸비페놀형 에폭시 수지가 높은 부가가치를 가지는 밀봉재로서 각광받고 있다.Materials used in the field of electrical and electronic materials require low dielectric constant and electrical insulation properties. In the field of semiconductor sealing materials among the electrical and electronic materials fields, tetramethylbiphenol-type epoxy resin is attracting attention as a sealing material with high added value.
상기 테트라메틸비페놀형 에폭시 수지는 강직한 테트라메틸비페닐 골격으로 인해, 내열성과 내흡습성이 우수하다. 또한, 상기 테트라메틸비페놀형 에폭시 수지는 150℃에서의 용융 점도가 낮기 때문에 높은 충전율을 가지는 반도체 충전재를 구현할 수 있다.The tetramethylbiphenol-type epoxy resin has excellent heat resistance and moisture absorption resistance due to its rigid tetramethylbiphenyl skeleton. In addition, since the tetramethylbiphenol-type epoxy resin has a low melt viscosity at 150°C, a semiconductor filler with a high filling rate can be implemented.
이와 같이 다양한 분야에서 에폭시 수지가 널리 사용됨에 따라, 에폭시 수지에 대하여 더 높은 수준의 품질이 요구되고 있다.As epoxy resins are widely used in various fields, a higher level of quality is required for epoxy resins.
에폭시 수지의 품질을 높이는 방법 중 하나로 불순물의 함량을 감소시켜 에폭시 수지의 순도를 높이는 기술에 대한 다양한 연구가 진행되고 있다.As one of the ways to improve the quality of epoxy resin, various research is being conducted on technology to increase the purity of epoxy resin by reducing the content of impurities.
일본공개특허 제1998-147629호는 에폭시 수지 제조시 사용된 촉매로부터 형성된 가수분해성 염소의 양을 저감시켜, 신뢰성이 향상된 에폭시 수지를 개시한다. 그러나, 상기 에폭시 수지에는 가수분해성 염소 이 외의 다양한 금속 양이온들이 검출될 가능성을 배제할 수 없으며, 상기 금속 양이온이 포함된 에폭시 수지를 반도체 충전재를 비롯한 전기·전자 재료 분야에 적용할 경우 성능 저하를 초래할 수도 있다.Japanese Patent Laid-Open No. 1998-147629 discloses an epoxy resin with improved reliability by reducing the amount of hydrolyzable chlorine formed from a catalyst used in producing an epoxy resin. However, the possibility that various metal cations other than hydrolyzable chlorine may be detected in the epoxy resin cannot be ruled out, and when epoxy resins containing the metal cations are applied to the field of electrical and electronic materials, including semiconductor fillers, performance deterioration may occur. It may be possible.
따라서, 에폭시 수지 제조 과정에서 사용되는 촉매나 염기성 물질 등으로부터 생성될 수 있는 금속 양이온의 함량을 저감시킬 수 있는 기술 개발이 요구되고 있다.Therefore, there is a need to develop technology that can reduce the content of metal cations that can be generated from catalysts or basic substances used in the epoxy resin manufacturing process.
본 발명자들은 상기 문제점을 해결하기 위해 다각적으로 연구를 수행한 결과, 테트라메틸비페놀형 에폭시 수지를 제조한 후, 카르복실산을 이용한 정제 공정을 실시할 경우, 최종 제조된 테트라메틸비페놀형 에폭시 수지에 포함된 금속 양이온의 함량이 현저히 감소되어, 고순도의 테트라메틸비페놀형 에폭시 수지가 제조되는 것을 확인하였다.The present inventors conducted various studies to solve the above problems, and as a result, when a purification process using carboxylic acid was performed after producing tetramethylbiphenol-type epoxy resin, the final manufactured tetramethylbiphenol-type epoxy resin It was confirmed that the content of metal cations contained in the resin was significantly reduced, and a high-purity tetramethylbiphenol-type epoxy resin was produced.
따라서, 본 발명의 목적은 고순도의 테트라메틸비페놀형 에폭시 수지 및 그 제조방법을 제공하는데 있다.Therefore, the purpose of the present invention is to provide a high-purity tetramethylbiphenol-type epoxy resin and a method for producing the same.
또한, 본 발명의 다른 목적은 상기 고순도의 테트라메틸비페놀형 에폭시 수지를 포함하는 에폭시 수지 조성물을 제공하는데 있다.In addition, another object of the present invention is to provide an epoxy resin composition containing the high purity tetramethylbiphenol type epoxy resin.
본 발명은, 하기 화학식 1로 표시되는 테트라메틸비페놀형 에폭시 수지로서, 상기 테트라메틸비페놀형 에폭시 수지 내에 포함된 금속 양이온의 함량은 2,000 ppb 이하이고, 상기 금속은 칼슘, 철, 나트륨, 마그네슘, 칼륨, 망간, 알루미늄 암모늄 및 리튬으로 이루어진 군에서 선택된 1종 이상을 포함하는 것인, 테트라메틸비페놀형 에폭시 수지를 제공한다:The present invention is a tetramethylbiphenol-type epoxy resin represented by the following formula (1), wherein the content of metal cations contained in the tetramethylbiphenol-type epoxy resin is 2,000 ppb or less, and the metals include calcium, iron, sodium, and magnesium. It provides a tetramethylbiphenol-type epoxy resin containing at least one member selected from the group consisting of potassium, manganese, aluminum ammonium, and lithium:
<화학식 1><Formula 1>
상기 화학식 1에서 n은 0 내지 5의 정수임.In Formula 1, n is an integer from 0 to 5.
본 발명은 또한, (S1) 하기 화학식 2로 표시되는 테트라메틸페놀(tetramethylphenol) 1 몰에 대하여, 하기 화학식 3으로 표시되는 에피클로로히드린(epichlorohydrin) 1.6 내지 20 몰을 반응시켜, 하기 화학식 4로 표시되는 할로히드린(halohydrin) 수지를 형성하는 단계,The present invention also relates to (S1) reacting 1.6 to 20 moles of epichlorohydrin, represented by Formula 3, with respect to 1 mole of tetramethylphenol, represented by Formula 2 below, to obtain Formula 4 below: forming the indicated halohydrin resin,
<화학식 2><Formula 2>
, ,
<화학식 3><Formula 3>
, ,
<화학식 4><Formula 4>
상기 화학식 4에서, n은 0 내지 5의 정수임;In Formula 4, n is an integer from 0 to 5;
(S2) 상기 (S1) 단계에서 제조된 상기 할로히드린 수지를 알칼리 금속 수산화물과 반응시켜 하기 화학식 1로 표시되는 테트라메틸비페놀형 에폭시 수지를 합성하는 단계, (S2) reacting the halohydrin resin prepared in step (S1) with an alkali metal hydroxide to synthesize a tetramethylbiphenol-type epoxy resin represented by the following formula (1),
<화학식 1><Formula 1>
. .
상기 화학식 1에서 n은 0 내지 5의 정수임; 및In Formula 1, n is an integer from 0 to 5; and
(S3) 상기 (S2) 단계에서 합성된 테트라메틸비페놀형 에폭시 수지를 카르복실산 수용액과 반응시켜 금속 양이온을 제거하여 정제하는 단계;를 포함하는 테트라메틸비페놀형 에폭시 수지의 제조방법을 제공한다.(S3) purifying the tetramethylbiphenol-type epoxy resin synthesized in step (S2) with an aqueous carboxylic acid solution to remove metal cations; providing a method for producing a tetramethylbiphenol-type epoxy resin comprising: do.
본 발명은 또한, 상기 테트라메틸비페놀형 에폭시 수지 및 경화제를 포함하는 에폭시 수지 조성물을 제공한다.The present invention also provides an epoxy resin composition containing the tetramethylbiphenol-type epoxy resin and a curing agent.
본 발명은 또한, 상기 에폭시 수지 조성물을 포함하는 경화물을 제공한다.The present invention also provides a cured product containing the above epoxy resin composition.
본 발명에 따르면, 고순도의 테트라메틸비페놀형 에폭시 수지에서 금속 양이온의 함량이 현저히 저하되어, 유전율이 낮아지므로 전기절연 특성이 향상될 수 있다. 이에 따라 저유전율 및 전기절연 특성이 요구되는 전기·전자 재료 분야, 특히 반도체 봉지재 분야에서 적용시 우수한 성능을 나타낼 수 있다.According to the present invention, the content of metal cations in a high-purity tetramethylbiphenol-type epoxy resin is significantly reduced, thereby lowering the dielectric constant, and thus the electrical insulation properties can be improved. Accordingly, it can exhibit excellent performance when applied in the field of electrical and electronic materials that require low dielectric constant and electrical insulation properties, especially in the field of semiconductor encapsulation materials.
이하, 본 발명에 대한 이해를 돕기 위하여 본 발명을 더욱 상세하게 설명한다.Hereinafter, the present invention will be described in more detail to facilitate understanding of the present invention.
본 명세서 및 청구범위에서 사용된 용어나 단어는 통상적이거나 사전적인 의미로 한정해서 해석되어서는 아니 되며, 발명자는 그 자신의 발명을 가장 최선의 방법으로 설명하기 위해 용어의 개념을 적절하게 정의할 수 있다는 원칙에 입각하여 본 발명의 기술적 사상에 부합하는 의미와 개념으로 해석되어야만 한다.Terms or words used in this specification and claims should not be construed as limited to their ordinary or dictionary meanings, and the inventor may appropriately define the concept of terms in order to explain his or her invention in the best way. It must be interpreted with meaning and concept consistent with the technical idea of the present invention based on the principle that it is.
테트라메틸비페놀형 에폭시 수지 Tetramethylbiphenol type epoxy resin
본 발명은 금속 양이온의 함량이 저감된 고순도 테트라메틸비페놀형 에폭시 수지에 관한 것이다. The present invention relates to a high-purity tetramethylbiphenol-type epoxy resin with a reduced content of metal cations.
상기 테트라메틸비페놀형 에폭시 수지는 하기 화학식 1로 표시된다:The tetramethylbiphenol type epoxy resin is represented by the following formula (1):
<화학식 1><Formula 1>
상기 화학식 1에서 n은 0 내지 5의 정수임.In Formula 1, n is an integer from 0 to 5.
일반적으로, 상기 테트라메틸비페놀형 에폭시 수지에는 합성 과정에서 사용된 촉매 등의 원료물질로 인하여 금속 양이온이 잔여 할 수 있다. 상기 금속 양이온은 불순물로 작용하여, 전기·전자 재료 분야 등에 적용될 경우 성능 저하를 초래할 수 있으므로, 상기 금속 양이온의 함량이 최소화되는 것이 바람직하다.In general, metal cations may remain in the tetramethylbiphenol-type epoxy resin due to raw materials such as catalysts used in the synthesis process. The metal cation acts as an impurity and may cause performance degradation when applied to the electrical/electronic materials field, etc., so it is desirable to minimize the content of the metal cation.
본 발명에 따른 고순도 테트라메틸비페놀형 에폭시 수지에 포함된 금속 양이온의 함량은 2,000 ppb 이하일 수 있다. 상기 금속 양이온의 함량은 상기 범위 내에서 작을수록 순도가 높은 것을 의미하며, 2,000 ppb를 초과할 경우 순도가 저하될 수 있고, 전기 전도도가 높아져 전기 전자용 소자에서 사용이 어려울 수 있다. 구체적으로, 상기 금속 양이온의 함량은 2,000 ppb 이하, 1,700 ppb 이하, 1,500 ppb 이하, 1,000 ppb 이하일 수 있다. 상기 금속 양이온 함량의 하한치는 특별히 제한되는 것은 아니며, 0 ppb 이상, 5 ppb 이상 또는 10 ppb 이상인 것일 수 있다. 상기 금속 양이온의 함량은 유도 결합 플라즈마 질량분석법(ICP-MS)로 측정된 것일 수 있다.The content of metal cations contained in the high-purity tetramethylbiphenol-type epoxy resin according to the present invention may be 2,000 ppb or less. The smaller the content of the metal cation is within the above range, the higher the purity. If it exceeds 2,000 ppb, the purity may decrease and the electrical conductivity may increase, making it difficult to use it in electrical and electronic devices. Specifically, the content of the metal cation may be 2,000 ppb or less, 1,700 ppb or less, 1,500 ppb or less, and 1,000 ppb or less. The lower limit of the metal cation content is not particularly limited and may be 0 ppb or more, 5 ppb or more, or 10 ppb or more. The content of the metal cation may be measured by inductively coupled plasma mass spectrometry (ICP-MS).
상기 금속은 칼슘, 철, 나트륨, 마그네슘, 칼륨, 망간, 알루미늄 암모늄 및 리튬으로 이루어진 군에서 선택된 1종 이상을 포함하는 것일 수 있다. 특히, 상기 테트라메틸비페놀에 에폭시 수지 내에서 상기 금속으로서 나트륨을 포함하고, 상기 테트라메틸페놀형 에폭시 수지 내에서 상기 나트륨 양이온의 함량은 1,000 ppb 이하인 것일 수 있다. 상기 나트륨 양이온의 함량은 상기 범위 내에서 작을수록 순도가 높은 것을 의미하며, 상기 나트륨 양이온의 함량이 1,000 ppb 범위를 초과하게 되면 반도체 봉지재를 비롯한 전기·전자 재료 분야에 적용할 경우 유전적 특성에서 문제를 초래할 수 있다. 구체적으로, 상기 나트륨 양이온의 함량은 1,000 ppb 이하, 900 ppb 이하, 700 ppb 이하, 500 ppb 이하 또는 300 ppb 이하 이하일 수 있다. 상기 나트륨 양이온 함량의 하한치는 특별히 제한되는 것은 아니며, 0 ppb 이상, 5 ppb 이상 또는 10 ppb 이상인 것일 수 있다. 상기 나트륨 양이온의 함량은 유도 결합 플라즈마 질량분석법(ICP-MS)로 측정된 것일 수 있다.The metal may include one or more selected from the group consisting of calcium, iron, sodium, magnesium, potassium, manganese, aluminum ammonium, and lithium. In particular, the tetramethylbiphenol epoxy resin may include sodium as the metal, and the content of the sodium cation in the tetramethylphenol type epoxy resin may be 1,000 ppb or less. The smaller the sodium cation content within the above range, the higher the purity, and when the sodium cation content exceeds the 1,000 ppb range, when applied to the field of electrical and electronic materials including semiconductor encapsulants, dielectric properties are reduced. It can cause problems. Specifically, the content of the sodium cation may be 1,000 ppb or less, 900 ppb or less, 700 ppb or less, 500 ppb or less, or 300 ppb or less. The lower limit of the sodium cation content is not particularly limited and may be 0 ppb or more, 5 ppb or more, or 10 ppb or more. The content of sodium cations may be measured by inductively coupled plasma mass spectrometry (ICP-MS).
본 발명에 있어서, 상기 테트라메틸비페놀형 에폭시 수지의 에폭시 당량은 178 g/eq 내지 255 g/eq 인 것일 수 있으며, 구체적으로 상기 에폭시 당량은 178 g/eq 이상, 180 g/eq 이상, 183 g/eq 이상 또는 185 g/eq 이상일 수 있고, 200 g/eq 이하, 220 g/eq 이하, 240 g/eq 이하 또는 255 g/eq 이하 일 수 있다. 상기 에폭시 당량은, 상기 테트라메틸비페놀형 에폭시 수지가 반도체 봉지재용으로 사용될 경우, 취급의 용이성을 고려하여 설정된 것일 수 있으며, 상기 에폭시 당량 범위에서 취급이 가장 용이할 수 있다.In the present invention, the epoxy equivalent weight of the tetramethylbiphenol-type epoxy resin may be 178 g/eq to 255 g/eq, and specifically, the epoxy equivalent weight is 178 g/eq or more, 180 g/eq or more, 183 g/eq or more. It may be more than g/eq or more than 185 g/eq, less than 200 g/eq, less than 220 g/eq, less than 240 g/eq, or less than 255 g/eq. The epoxy equivalent may be set in consideration of ease of handling when the tetramethylbiphenol-type epoxy resin is used for a semiconductor encapsulation material, and handling may be easiest within the epoxy equivalent range.
테트라메틸비페놀형 에폭시 수지의 제조방법Manufacturing method of tetramethylbiphenol type epoxy resin
본 발명은 또한, 상기 테트라메틸비페놀형 에폭시 수지의 제조방법에 관한 것으로, (S1) 하기 화학식 2로 표시되는 테트라메틸페놀(tetramethylphenol, 4,4'-비스히드록시-3,3',5,5'-테트라메틸비페닐) 1 몰에 대하여, 하기 화학식 3으로 표시되는 에피클로로히드린(epichlorohydrin) 1.6 내지 20 몰을 반응시켜, 하기 화학식 4로 표시되는 할로히드린(halohydrin) 수지를 형성하는 단계,The present invention also relates to a method for producing the above tetramethylbiphenol type epoxy resin, (S1) tetramethylphenol (4,4'-bishydroxy-3,3',5) represented by the following formula (2) For 1 mole of 5'-tetramethylbiphenyl), 1.6 to 20 moles of epichlorohydrin represented by the following formula 3 are reacted to form a halohydrin resin represented by the following formula 4. steps to do,
<화학식 2><Formula 2>
, ,
<화학식 3><Formula 3>
, ,
<화학식 4><Formula 4>
상기 화학식 4에서, n은 0 내지 5의 정수임;In Formula 4, n is an integer from 0 to 5;
(S2) 상기 (S1) 단계에서 제조된 상기 할로히드린 수지를 알칼리 금속 수산화물과 반응시켜 하기 화학식 1로 표시되는 테트라메틸비페놀형 에폭시 수지를 합성하는 단계, (S2) reacting the halohydrin resin prepared in step (S1) with an alkali metal hydroxide to synthesize a tetramethylbiphenol-type epoxy resin represented by the following formula (1),
<화학식 1><Formula 1>
상기 화학식 1에서 n은 0 내지 5의 정수임; 및In Formula 1, n is an integer from 0 to 5; and
(S3) 상기 (S2) 단계에서 합성된 테트라메틸비페놀형 에폭시 수지를 카르복실산 수용액과 반응시켜 금속 양이온을 제거하여 정제하는 단계;를 포함할 수 있다.(S3) purifying the tetramethylbiphenol-type epoxy resin synthesized in step (S2) by reacting it with an aqueous carboxylic acid solution to remove metal cations.
본 발명의 테트라메틸비페놀형 에폭시 수지는, 통상의 제조방법에 따라, 상기 화학식 4로 표시되는 할로히드린 수지를 제조한 후, 이것을 강알칼리인 알칼리 금속 수산화물과 반응시켜 제조할 수 있으며, 카르복실산을 이용한 정제 공정을 거침으로써 특정 금속 양이온의 함량을 저하시켜 고순도의 테트라메틸비페놀형 에폭시 수지를 제조할 수 있다.The tetramethylbiphenol-type epoxy resin of the present invention can be prepared by preparing the halohydrin resin represented by the above formula (4) according to a conventional production method and then reacting it with an alkali metal hydroxide, which is a strong alkali, and carboxyl By going through a purification process using acid, the content of specific metal cations can be reduced to produce high-purity tetramethylbiphenol-type epoxy resin.
이하, 각 단계별로 본 발명에 따른 테트라메틸비페놀형 에폭시 수지의 제조방법을 보다 상세히 설명한다.Hereinafter, the method for producing tetramethylbiphenol-type epoxy resin according to the present invention will be described in more detail at each step.
본 발명에 있어서, 상기 (S1) 단계에서는 상기 화학식 2로 표시되는 테트라메틸페놀(tetramethylphenol) 1 몰에 대하여, 상기 화학식 3으로 표시되는 에피클로로히드린(epichlorohydrin) 1.6 내지 20 몰을 반응시켜, 상기 화학식 4로 표시되는 할로히드린(halohydrin) 수지를 형성할 수 있다. 구체적으로, 상기 에피클로로히드린의 사용량은 1.6 몰 이상, 1.8 몰 이상, 2.0 몰 이상, 2.5 몰 이상, 3.0 몰 이상, 3.5 몰 이상, 4.0 몰 이상, 4.5 몰 이상 또는 5.0 몰 이상일 수 있고, 10 몰 이하, 12 몰 이하, 14 몰 이하, 16 몰 이하, 18 몰 이하 또는 20 몰 이하일 수 있다. 상기 에피클로로히드린의 사용량이 1.6 몰 미만이면 상기 할로히드린 수지가 충분히 형성되지 않을 수 있고, 20 몰 초과이면 잔여 에피클로로히드린이 증가하여 생산 효율이 저하될 수 있다. 즉, 상기 에피클로로히드린의 사용량이 상기 범위 내일 때 반응을 제어하기가 용이하고, 생산 효율을 향상시킬 수 있다.In the present invention, in the step (S1), 1.6 to 20 moles of epichlorohydrin represented by Formula 3 are reacted with 1 mole of tetramethylphenol represented by Formula 2, A halohydrin resin represented by Chemical Formula 4 can be formed. Specifically, the amount of epichlorohydrin used may be 1.6 mol or more, 1.8 mol or more, 2.0 mol or more, 2.5 mol or more, 3.0 mol or more, 3.5 mol or more, 4.0 mol or more, 4.5 mol or more, or 5.0 mol or more, 10 It may be a mole or less, 12 moles or less, 14 moles or less, 16 moles or less, 18 moles or less, or 20 moles or less. If the amount of epichlorohydrin used is less than 1.6 mole, the halohydrin resin may not be sufficiently formed, and if it is more than 20 mole, the remaining epichlorohydrin may increase and production efficiency may decrease. That is, when the amount of epichlorohydrin used is within the above range, it is easy to control the reaction and improve production efficiency.
구체적으로, 상기 반응은 상기 테트라메틸페놀과 에피클로로히드린을 유기용매와 혼합한 후, 촉매 하에서 실시되는 것일 수 있다. Specifically, the reaction may be carried out under a catalyst after mixing the tetramethylphenol and epichlorohydrin with an organic solvent.
상기 촉매는 테트라메틸암모늄클로라이드 및/또는 테트라에틸암모늄브로마이드를 포함하는 제4급 암모늄염; 벤질디메틸아민 및/또는 2,4,6-트리스(디메틸아미노메틸)페놀을 포함하는 제3급 아민; 2-에틸-4-메틸이미다졸 및/또는 2-페닐이미다졸을 포함하는 이미다졸류; 에틸트리페닐포스포늄아이오다이드를 포함하는 포스포늄염; 및 트리페닐포스핀을 포함하는 포스핀류;로 이루어진 군에서 선택되는 1종 이상을 포함하는 것일 수 있다. The catalyst may be a quaternary ammonium salt including tetramethylammonium chloride and/or tetraethylammonium bromide; tertiary amines including benzyldimethylamine and/or 2,4,6-tris(dimethylaminomethyl)phenol; imidazoles including 2-ethyl-4-methylimidazole and/or 2-phenylimidazole; Phosphonium salts including ethyltriphenylphosphonium iodide; and phosphines including triphenylphosphine; and may include one or more types selected from the group consisting of.
또한, 상기 유기용매는 에탄올 및/또는 이소프로판올을 포함하는 알코올류; 아세톤 및/또는 메틸에틸케톤을 포함하는 케톤류; 디옥산 및/또는 에틸렌글리콜디메틸에를 포함하는 에테르류; 메톡시프로판올을 포함하는 글리콜에테르류; 및 디메틸술폭시드 및/또는 디메틸포름아미드를 포함하는 비프로톤성 극성 용매;로 이루어진 군에서 선택되는 1종 이상의 유기용매를 포함하는 것일 수 있고, 특히 불활성 유기용매를 포함하는 것일 수 있다.Additionally, the organic solvent may include alcohols including ethanol and/or isopropanol; Ketones including acetone and/or methyl ethyl ketone; ethers including dioxane and/or ethylene glycol dimethyl; Glycol ethers including methoxypropanol; and an aprotic polar solvent including dimethyl sulfoxide and/or dimethyl formamide; it may contain one or more organic solvents selected from the group consisting of, and may especially contain an inert organic solvent.
또한, 상기 반응을 촉진시키기 위하여, 물과 같은 수용성 용매를 함께 혼합할 수도 있다.Additionally, in order to promote the reaction, a water-soluble solvent such as water may be mixed together.
또한, 상기 반응이 수행되는 반응온도는 50℃ 내지 150℃일 수 있으며, 구체적으로 상기 반응온도는 50℃ 이상, 55℃ 이상 또는 60℃ 이상일 수 있고, 80℃ 이하, 100℃ 이하, 120℃ 이하 또는 150℃ 이하일 수 있다. 상기 반응온도가 50℃ 미만이면 반응이 원활하게 진행되지 않고, 150℃ 초과이면 고분자량이 많이 생겨 원하는 에폭시 당량을 얻을 수 없을 수 있다.In addition, the reaction temperature at which the reaction is performed may be 50°C to 150°C. Specifically, the reaction temperature may be 50°C or higher, 55°C or higher, or 60°C or higher, and 80°C or lower, 100°C or lower, or 120°C or lower. Or it may be 150°C or lower. If the reaction temperature is less than 50°C, the reaction does not proceed smoothly, and if it exceeds 150°C, a high molecular weight is generated and the desired epoxy equivalent may not be obtained.
본 발명에 있어서, 상기 (S2) 단계에서는 상기 (S1) 단계에서 합성된 상기 할로히드린 수지를 알칼리 금속 수산화물과 반응시켜 상기 화학식 1로 표시되는 테트라메틸비페놀형 에폭시 수지를 형성할 수 있다.In the present invention, in the step (S2), the halohydrin resin synthesized in the step (S1) is reacted with an alkali metal hydroxide to form a tetramethylbiphenol-type epoxy resin represented by Formula 1.
상기 알칼리 금속 수산화물은 강알칼리일 수 있으며, 예를 들어, 수산화나트륨, 수산화칼슘 또는 수산화칼륨일 수 있으며, 수용액의 형태로 반응에 사용될 수 있다.The alkali metal hydroxide may be a strong alkali, for example, sodium hydroxide, calcium hydroxide, or potassium hydroxide, and may be used in the reaction in the form of an aqueous solution.
상기 할로히드린 수지 1.0 몰 당 상기 알칼리 금속 수산화물 1.0 몰 내지 4.0몰을 반응시킬 수 있으며, 구체적으로, 상기 알칼리 금속 수산화물은 1.0 몰 이상, 1.2 몰 이상 또는 1.5 몰 이상일 수 있고, 2.5 몰 이하, 3.0 몰 이하, 3.5 몰 이하 또는 4.0 몰 이하일 수 있다. 상기 알칼리 금속 수산화물이 1.0 몰 미만이면 수산기와 염소 작용기의 결합으로 생성된 에폭시 수지가 생성되기 어렵고, 반응 시간이 오래 걸려 생산성이 저하될 수 있으며, 4.0 몰 초과이면 부반응에 의한 불순물 즉 고분자량의 생성으로 화학식 1로 표시되는 테트라메틸비페놀형 에폭시 수지의 제조가 어려울 수 있고, 이후 알칼리 금속 제거를 위해 수세 공정 중 물의 사용이 늘어나 경제성에 문제가 생길 수 있다.1.0 mole to 4.0 mole of the alkali metal hydroxide may be reacted per 1.0 mole of the halohydrin resin. Specifically, the alkali metal hydroxide may be 1.0 mole or more, 1.2 mole or more, or 1.5 mole or more, 2.5 mole or less, 3.0 mole or more. It may be less than or equal to 3.5 moles or less than or equal to 4.0 moles. If the alkali metal hydroxide is less than 1.0 mol, it is difficult to produce an epoxy resin produced by combining hydroxyl and chlorine functional groups, and the reaction time may take a long time, which may reduce productivity. If the alkali metal hydroxide is more than 4.0 mol, impurities, that is, high molecular weight, are generated due to side reactions. It may be difficult to manufacture the tetramethylbiphenol-type epoxy resin represented by Chemical Formula 1, and the use of water during the washing process to remove alkali metals may increase, which may cause problems with economic feasibility.
상기 반응 시, 반응온도는 40℃ 내지 150℃ 일 수 있으며, 구체적으로, 상기 반응온도는 40℃ 이상, 50℃ 이상, 60℃ 이상 또는 70℃ 이상일 수 있으며, 90℃ 이하, 100℃ 이하, 110℃ 이하, 130℃ 이하 또는 150℃ 이하일 수 있다. 상기 반응온도가 40℃ 미만이면 반응이 진행되지 않거나 반응시간이 길어져 공정 효율이 저하될 수 있고, 150℃ 초과이면 부반응이 진행될 수 있다.During the reaction, the reaction temperature may be 40°C to 150°C. Specifically, the reaction temperature may be 40°C or higher, 50°C or higher, 60°C or higher, or 70°C or higher, 90°C or lower, 100°C or lower, 110°C or higher. It may be below ℃, below 130℃ or below 150℃. If the reaction temperature is less than 40°C, the reaction may not proceed or the reaction time may be prolonged and process efficiency may be reduced, and if the reaction temperature is above 150°C, a side reaction may proceed.
또한, 상기 반응은 상압 하 또는 감압 하에서 수행될 수도 있다. Additionally, the reaction may be performed under normal pressure or reduced pressure.
또한, 상기 반응은 필요에 따라 상기 반응온도를 유지하면서 반응액을 공비시키고, 휘발하는 증기를 냉각하여 얻어진 응축액을 유/수 분리하며, 수분을 제외한 유분을 반응계로 되돌리는 방법에 의해 탈수하면서 행해질 수도 있다.In addition, the reaction may be carried out while maintaining the reaction temperature as necessary, azeotroping the reaction solution, cooling the volatilizing vapor, separating the obtained condensate into oil/water, and dehydrating the oil excluding water by returning it to the reaction system. It may be possible.
상기 알칼리 금속 수산화물은, 급격한 반응을 억제하기 위하여, 0.1 시간 내지 8 시간 동안 첨가하면서 반응을 진행할 수도 있으며, 구체적으로 상기 반응시간은 0.1 시간 이상, 0.5 시간 이상 또는 1.0 시간 이상일 수 있고, 2 시간 이하, 4 시간 이하, 6 시간 이하 또는 8 시간 이하일 수 있다. 상기 반응시간이 0.1 시간 미만이면 급격히 반응이 진행되어 반응온도를 제어하기가 어려우므로 부반응이 발생할 수 있고, 8 시간 초과이면 반응시간이 지나치게 길어져 공정 효율이 저하될 수 있다. In order to suppress rapid reaction, the alkali metal hydroxide may be added for 0.1 to 8 hours to proceed with the reaction. Specifically, the reaction time may be 0.1 hour or more, 0.5 hour or more, or 1.0 hour or more, and 2 hours or less. , may be 4 hours or less, 6 hours or less, or 8 hours or less. If the reaction time is less than 0.1 hours, the reaction progresses rapidly and it is difficult to control the reaction temperature, so side reactions may occur. If the reaction time is more than 8 hours, the reaction time may become too long and process efficiency may decrease.
상기 반응이 종료된 후에, 물을 이용하여 수세한 후 물 층을 제거함으로써 부생물, 미반응물 또는 불순물을 제거하여, 상기 화학식 1로 표시되는 테트라메틸비페놀형 에폭시 수지가 제조될 수 있다. 또는, 여과 분별이나 감압 증류에 의해 부생물, 미반응물 또는 불순물을 제거할 수도 있다. After the reaction is completed, by-products, unreacted products, or impurities are removed by washing with water and removing the water layer, thereby producing the tetramethylbiphenol-type epoxy resin represented by Formula 1. Alternatively, by-products, unreacted substances, or impurities may be removed by filtration or fractionation or reduced-pressure distillation.
본 발명에 있어서, 상기 (S3) 단계에서는 상기 (S2) 단계에서 합성된 테트라메틸비페놀형 에폭시 수지를 카르복실산 수용액과 반응시켜 금속 양이온을 제거하여 정제할 수 있다.In the present invention, in the step (S3), the tetramethylbiphenol-type epoxy resin synthesized in the step (S2) can be purified by reacting it with an aqueous carboxylic acid solution to remove metal cations.
상기 (S2) 단계에서 상술한 바와 같이, 제조된 테트라메틸비페놀형 에폭시 수지를 수세, 여과 분별 또는 감압 증류하여 부생염, 미반응물 또는 불순물을 제거한 후, 추가로 카르복실산 수용액으로 정제할 경우 금속 양이온을 제거할 수 있다. As described above in step (S2), the prepared tetramethylbiphenol-type epoxy resin is washed with water, filtered, fractionated, or distilled under reduced pressure to remove by-product salts, unreacted products, or impurities, and then further purified with an aqueous carboxylic acid solution. Metal cations can be removed.
상기 금속 양이온은 대부분 상기 테트라메틸비페놀형 에폭시 수지의 제조 공정에 사용되는 촉매 또는 알칼리 금속 수산화물로부터 기인하는 것일 수 있다. 상기 카르복실산 수용액으로 상기 케트라메틸페놀형 에폭시 수지를 세정할 경우, 상기 카르복실산은 상기 금속 양이온과 결합하여 염을 형성하고, 상기 금속 양이온을 포함하는 염이 수층으로 이동한 후, 상기 수층을 제거하면, 상기 수층에 포함된 금속 양이온이 제거되는 정제 공정이 수행될 수 있다.Most of the metal cations may originate from catalysts or alkali metal hydroxides used in the manufacturing process of the tetramethylbiphenol-type epoxy resin. When washing the tetramethylphenol-type epoxy resin with the aqueous carboxylic acid solution, the carboxylic acid combines with the metal cation to form a salt, and after the salt containing the metal cation moves to the water layer, the water layer By removing, a purification process in which metal cations contained in the water layer are removed can be performed.
이와 같이 상기 카르복실산 수용액을 이용한 정제 공정을 수차례 반복하면, 상기 테트라메틸비페놀형 에폭시 수지에 포함된 금속 양이온의 함량을 감소시켜 고순도의 테트라메틸비페놀형 에폭시 수지를 제조할 수 있다.In this way, if the purification process using the aqueous carboxylic acid solution is repeated several times, the content of metal cations contained in the tetramethylbiphenol-type epoxy resin can be reduced, thereby producing a high-purity tetramethylbiphenol-type epoxy resin.
상기 카르복실산은 옥살산, 프탈산, 이소프탈산, 테레프탈산, 트리멜리트산, 테트라히드로프탈산, 헥사히드로프탈산, 테트라클로로프탈산, 아돌프간, 아젤라, 세박산, 숙신산, 말산, 글라타르산, 말론산, 피멜산, 및 수베르산으로 이루어진 군에서 선택된 1종 이상을 포함할 수 있으며, 상기 카르복실산 중 분자 내에 카르복실산량이 많은 옥살산이 바람직할 수 있다.The carboxylic acids include oxalic acid, phthalic acid, isophthalic acid, terephthalic acid, trimellitic acid, tetrahydrophthalic acid, hexahydrophthalic acid, tetrachlorophthalic acid, adolfgan, azela, sebacic acid, succinic acid, malic acid, glataric acid, malonic acid, and pimelic acid. , and suberic acid. Among the carboxylic acids, oxalic acid with a large amount of carboxylic acid in the molecule may be preferable.
또한, 상기 카르복실산 수용액의 농도는 1% 내지 50% 일 수 있으며, 구체적으로 상기 카르복실산 수용액의 농도는 1% 이상, 5% 이상 또는 10% 이상일 수 있고, 20% 이하, 30% 이하, 40% 이하 또는 50% 이하일 수 있다. 상기 카르복실산 수용액의 농도가 1% 미만이면 세척 공정의 횟수가 늘어나므로 폐수 발생이 많아져 경제성이 저하되고 환경적으로도 문제가 발생할 수 있고, 50% 초과이면 상기 에폭시 수지가 석출되거나 카르복실산과 금속 양이온의 염이 원할하게 수층으로 이동하기 어려워 정제 효율이 저하될 수 있다.In addition, the concentration of the carboxylic acid aqueous solution may be 1% to 50%, and specifically, the concentration of the carboxylic acid aqueous solution may be 1% or more, 5% or more, or 10% or more, and 20% or less, 30% or less. , may be 40% or less or 50% or less. If the concentration of the carboxylic acid aqueous solution is less than 1%, the number of cleaning processes increases, resulting in increased wastewater generation, which reduces economic efficiency and may cause environmental problems. If it exceeds 50%, the epoxy resin may precipitate or carboxylic acid may be formed. It is difficult for salts of acids and metal cations to move smoothly into the water layer, which may reduce purification efficiency.
테트라메틸비페놀형 에폭시 수지 조성물Tetramethylbiphenol type epoxy resin composition
본 발명은 또한, 상기 테트라메틸비페놀형 에폭시 수지 및 경화제를 포함하는 테트라메틸비페놀형 에폭시 수지 조성물에 관한 것이다. 또한, 상기 테트라메틸비페놀형 에폭시 수지 조성물은 추가 에폭시 수지, 경화촉진제 및 무기 충전재로 이루어진 군에서 선택되는 1종 이상을 더 포함할 수 있으며, 상기 추가 에폭시 수지는 테트라메틸비페놀형 에폭시 수지와는 상이한 에폭시 수지인 것일 수 있다.The present invention also relates to a tetramethylbiphenol-type epoxy resin composition comprising the tetramethylbiphenol-type epoxy resin and a curing agent. In addition, the tetramethylbiphenol-type epoxy resin composition may further include at least one selected from the group consisting of an additional epoxy resin, a curing accelerator, and an inorganic filler, and the additional epoxy resin is a tetramethylbiphenol-type epoxy resin and may be a different epoxy resin.
본 발명에 따른 테트라메틸비페놀형 에폭시 수지 조성물은 상술한 바와 같이 금속 양이온의 함량이 감소된 고순도 테트라메틸비페놀형 에폭시 수지를 포함하므로, 내열성 및 내흡습성 뿐만아니라, 낮은 전기전도도, 낮은 유전율을 제공하여 전기전자 재료, 특히, 절연 특성이 요구되는 반도체 봉지재로 적용할 수 있다. As described above, the tetramethylbiphenol-type epoxy resin composition according to the present invention contains a high-purity tetramethylbiphenol-type epoxy resin with a reduced content of metal cations, and therefore has not only heat resistance and moisture absorption resistance, but also low electrical conductivity and low dielectric constant. It can be applied to electrical and electronic materials, especially semiconductor encapsulation materials that require insulating properties.
상기 테트라메틸비페놀형 에폭시 수지 조성물은 상기 원료 물질들을 혼합하여 제조될 수 있다.The tetramethylbiphenol-type epoxy resin composition can be prepared by mixing the raw materials.
테트라메틸비페놀형 에폭시 수지Tetramethylbiphenol type epoxy resin
본 발명에 있어서, 상기 테트라메틸비페놀형 에폭시 수지는 상술한 바와 같은 화학식 1로 표시되는 고순도 테트라메틸비페놀형 에폭시 수지일 수 있다.In the present invention, the tetramethylbiphenol-type epoxy resin may be a high-purity tetramethylbiphenol-type epoxy resin represented by Chemical Formula 1 as described above.
상기 테트라메틸비페놀형 에폭시 수지는 상기 조성물 전체 중량을 기준으로 10 중량% 내지 30 중량%로 포함될 수 있으며, 구체적으로, 상기 테트라메틸비페놀형 에폭시 수지의 함량은 10 중량% 이상, 12 중량% 이상 또는 14 중량% 이상일 수 있고, 16 중량% 이하, 18 중량% 이하 또는 20 중량% 이하일 수 있다. 상기 테트라메틸비페놀형 에폭시 수지의 함량이 10 중량% 미만이면 조성물 및 후술하는 바와 같은 경화물의 전기적 특성, 내열성 및 내흡습성이 저하될 수 있고, 20 중량% 초과이면 조성물 내의 다른 성분 즉, 경화제 등의 함량이 상대적으로 저하되어 경화물을 형성하기 어려운 등의 문제가 발생할 수 있다.The tetramethylbiphenol-type epoxy resin may be included in an amount of 10% to 30% by weight based on the total weight of the composition. Specifically, the content of the tetramethylbiphenol-type epoxy resin is 10% by weight or more and 12% by weight. It may be more than or equal to 14% by weight, and may be less than or equal to 16% by weight, less than or equal to 18% by weight, or less than or equal to 20% by weight. If the content of the tetramethylbiphenol type epoxy resin is less than 10% by weight, the electrical properties, heat resistance, and moisture absorption resistance of the composition and the cured product as described later may be reduced, and if it is more than 20% by weight, other components in the composition, such as curing agent, etc. Because the content is relatively low, problems such as difficulty in forming a cured product may occur.
경화제hardener
본 발명에 있어서, 상기 경화제는 테트라메틸비페놀형 에폭시 수지의 에폭시기 사이의 가교 반응 및/또는 쇄길이 연장 반응에 기여하여 경화물 형성을 가능하게 할 수 있다. In the present invention, the curing agent may contribute to the crosslinking reaction and/or chain length extension reaction between epoxy groups of the tetramethylbiphenol-type epoxy resin, thereby enabling the formation of a cured product.
상기 경화제는 상기 조성물 전체 중량을 기준으로 5 중량% 내지 20 중량%로 포함될 수 있으며, 구체적으로, 상기 경화제의 함량은 5 중량% 이상, 8 중량% 이상 또는 10 중량% 이상일 수 있고, 15 중량% 이하, 18 중량% 이하 또는 20 중량% 이하일 수 있다. 상기 경화제의 함량이 5 중량% 미만이면 에폭시기 사이의 가교 반응 및/또는 쇄길이 연장 반응이 충분치 않아 경화물이 형성되기 어려울 수 있고, 20 중량% 초과이면 과도하게 경화가 진행되어 전기적 특성, 내열성 또는 내흡습성과 같은 물성이 오히려 나빠질 수 있다.The curing agent may be included in an amount of 5% to 20% by weight based on the total weight of the composition. Specifically, the content of the curing agent may be 5% by weight or more, 8% by weight or more, or 10% by weight or more, and 15% by weight. It may be 18% by weight or less or 20% by weight or less. If the content of the curing agent is less than 5% by weight, it may be difficult to form a cured product because the crosslinking reaction and/or chain length extension reaction between epoxy groups is not sufficient, and if it is more than 20% by weight, excessive curing may occur, resulting in loss of electrical properties, heat resistance, or Physical properties such as moisture absorption resistance may actually worsen.
상기 경화제로서는, 특별히 제한은 없고 일반적으로 에폭시 수지의 경화제로서 알려져 있는 것은 모두 사용할 수 있다. 예컨대, 상기 경화제는 페놀계 경화제, 아민계 경화제, 산 무수물계 경화제, 아미드계 경화제 및 이미다졸류로 이루어진 군에서 선택된 1종 이상을 포함하는 것일 수 있다. 상기 아민계 경화제는 경화제, 지방족 아민, 폴리에테르아민, 지환식 아민, 방향족 아민 및 제3급 아민으로 이루어진 군에서 선택된 1종 이상을 포함할 수 있다. The curing agent is not particularly limited, and any curing agent generally known as an epoxy resin can be used. For example, the curing agent may include one or more selected from the group consisting of phenol-based curing agents, amine-based curing agents, acid anhydride-based curing agents, amide-based curing agents, and imidazoles. The amine-based curing agent may include one or more selected from the group consisting of a curing agent, aliphatic amine, polyether amine, alicyclic amine, aromatic amine, and tertiary amine.
이 중, 페놀계 경화제를 포함함으로써, 본 발명의 에폭시 수지 조성물은, 우수한 내열성, 내응력성, 내흡습성, 난연성 등을 얻을 수 있기 때문에, 경화제로서는 페놀계 경화제를 포함하는 것이 바람직하다. 또한, 내열성 등의 관점에서는, 산 무수물계 경화제, 아미드계 경화제를 포함하는 것이 바람직하다. 또한, 이미다졸류를 이용하는 것도, 경화 반응을 충분히 진행시키고, 내열성을 향상시키는 관점에서 바람직하다.Among these, by including a phenol-based curing agent, the epoxy resin composition of the present invention can obtain excellent heat resistance, stress resistance, moisture absorption resistance, flame retardancy, etc., so it is preferable to include a phenol-based curing agent as the curing agent. Additionally, from the viewpoint of heat resistance and the like, it is preferable to include an acid anhydride-based curing agent or an amide-based curing agent. Additionally, the use of imidazoles is also preferable from the viewpoint of sufficiently advancing the curing reaction and improving heat resistance.
페놀계 경화제의 구체예로서는, 비스페놀 A, 비스페놀 F, 비스페놀 S, 비스페놀 AD, 하이드로퀴논, 레조르신, 메틸레조르신, 비페놀, 테트라메틸비페놀, 디히드록시나프탈렌, 디히드록시디페닐에테르, 티오디페놀류, 페놀노볼락 수지, 크레졸노볼락 수지, 페놀아랄킬 수지, 비페닐아랄킬 수지, 나프톨아랄킬 수지, 테르펜페놀 수지, 디시클로펜타디엔페놀 수지, 비스페놀 A 노볼락 수지, 트리스페놀메탄형 수지, 나프톨노볼락 수지, 브롬화 비스페놀 A, 브롬화 페놀노볼락 수지 등의 여러 가지 다가 페놀류나, 여러 가지 페놀류와 벤즈알데히드, 히드록시벤즈알데히드, 크로톤알데히드, 글리옥살 등의 여러 가지 알데히드류와의 축합 반응으로 얻어지는 다가 페놀 수지류, 크실렌 수지와 페놀류의 축합 반응으로 얻어지는 다가 페놀 수지류, 중질유 또는 피치류와 페놀류와 포름알데히드류의 공축합 수지, 페놀·벤즈알데히드·크실릴렌디메톡사이드 중축합물, 페놀·벤즈알데히드·크실릴렌디할라이드 중축합물, 페놀·벤즈알데히드·4,4'-디메톡사이드비페닐 중축합물, 페놀·벤즈알데히드·4,4'-디할라이드비페닐 중축합물 등의 각종의 페놀 수지류 등을 들 수 있다. 이들 페놀계 경화제는, 1종만으로 이용해도, 2종 이상을 임의의 조합 및 배합 비율로 조합하여 이용해도 좋다.Specific examples of phenolic curing agents include bisphenol A, bisphenol F, bisphenol S, bisphenol AD, hydroquinone, resorcinol, methylresorcinol, biphenol, tetramethylbiphenol, dihydroxynaphthalene, dihydroxydiphenyl ether, and tea. Odiphenols, phenol novolak resin, cresol novolak resin, phenol aralkyl resin, biphenyl aralkyl resin, naphthol aralkyl resin, terpene phenol resin, dicyclopentadiene phenol resin, bisphenol A novolak resin, trisphenol methane type Resin, naphthol novolac resin, brominated bisphenol A, brominated phenol novolak resin, etc., various polyhydric phenols, various phenols, and various aldehydes such as benzaldehyde, hydroxybenzaldehyde, crotonaldehyde, and glyoxal. Polyhydric phenol resins obtained, polyhydric phenol resins obtained by condensation reaction of xylene resins and phenols, cocondensation resins of heavy oils or pitches, phenols, and formaldehydes, phenol·benzaldehyde·xylylenedimethoxide polycondensate, phenol·benzaldehyde · Various phenol resins such as xylylene dihalide polycondensate, phenol·benzaldehyde·4,4'-dimethoxide biphenyl polycondensate, and phenol·benzaldehyde·4,4'-dihalide biphenyl polycondensate. You can. These phenol-based curing agents may be used alone or two or more types may be used in combination in any combination and mixing ratio.
아민계 경화제의 예로서는, 지방족 아민류, 폴리에테르아민류, 지환식 아민류, 방향족 아민류 등을 들 수 있다. 지방족 아민류로서는, 에틸렌디아민, 1,3-디아미노프로판, 1,4-디아미노프로판, 헥사메틸렌디아민, 2,5-디메틸헥사메틸렌디아민, 트리메틸헥사메틸렌디아민, 디에틸렌트리아민, 이미노비스프로필아민, 비스(헥사메틸렌)트리아민, 트리에틸렌테트라민, 테트라에틸렌펜타민, 펜타에틸렌헥사민, N-히드록시에틸에틸렌디아민, 테트라(히드록시에틸)에틸렌디아민 등을 사용할수 있으며, 폴리에테르아민류로서는, 트리에틸렌글리콜디아민, 테트라에틸렌글리콜디아민, 디에틸렌글리콜비스(프로필아민), 폴리옥시프로필렌디아민, 폴리옥시프로필렌트리아민류 등이 있으며, 지환식 아민류로서는, 이소포론디아민, 메타센디아민, N-아미노에틸피페라진, 비스(4-아미노-3-메틸디시클로헥실)메탄, 비스(아미노메틸)시클로헥산, 3,9-비스(3-아미노프로필)-2,4,8,10-테트라옥사스피로(5,5)운데칸, 노르보르넨디아민 등을 사용 할 수 있고, 마지막으로 방향족 아민류로서는, 테트라클로로-p-크실렌디아민, m-크실렌디아민, p-크실렌디아민, m-페닐렌디아민, o-페닐렌디아민, p-페닐렌디아민, 2,4-디아미노아니솔, 2,4-톨루엔디아민, 2,4-디아미노디페닐메탄, 4,4'-디아미노디페닐메탄, 4,4'-디아미노-1,2-디페닐에탄, 2,4-디아미노디페닐술폰, 4,4'-디아미노디페닐술폰, m-아미노페놀, m-아미노벤질아민, 벤질디메틸아민, 2-(디메틸아미노메틸)페놀, 트리에탄올아민, 메틸벤질아민, α-(m-아미노페닐)에틸아민, α-(p-아미노페닐)에틸아민, 디아미노디에틸디메틸디페닐메탄, α,α'-비스(4-아미노페닐)-p-디이소프로필벤젠 등을 사용할 수 있다. 이상에서 든 아민계 경화제는 1종만으로 이용해도, 2종 이상을 임의의 조합 및 배합 비율로 조합하여 이용해도 좋다. 상기한 아민계 경화제는, 에폭시 수지 조성물에 포함되는 전체 에폭시 수지 성분 중의 에폭시기에 대한 경화제 중의 작용기의 당량비로 0.8∼1.5의 범위가 되도록 이용하는 것이 바람직하다. 이 범위 내이면 미반응의 에폭시기나 경화제의 작용기가 잔류하기 어려워지기 때문에 바람직하다.Examples of amine-based curing agents include aliphatic amines, polyether amines, alicyclic amines, and aromatic amines. Examples of aliphatic amines include ethylenediamine, 1,3-diaminopropane, 1,4-diaminopropane, hexamethylenediamine, 2,5-dimethylhexamethylenediamine, trimethylhexamethylenediamine, diethylenetriamine, and iminobispropylamine. , bis(hexamethylene)triamine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, N-hydroxyethylethylenediamine, tetra(hydroxyethyl)ethylenediamine, etc. can be used, and polyetheramines include , triethylene glycol diamine, tetraethylene glycol diamine, diethylene glycol bis (propylamine), polyoxypropylene diamine, polyoxypropylene triamine, etc., and alicyclic amines include isophorone diamine, methenediamine, and N-amino. Ethylpiperazine, bis(4-amino-3-methyldicyclohexyl)methane, bis(aminomethyl)cyclohexane, 3,9-bis(3-aminopropyl)-2,4,8,10-tetraoxaspiro (5,5)Undecane, norbornediamine, etc. can be used, and finally, as aromatic amines, tetrachloro-p-xylenediamine, m-xylenediamine, p-xylenediamine, m-phenylenediamine, o -Phenylenediamine, p-phenylenediamine, 2,4-diaminoanisole, 2,4-toluenediamine, 2,4-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 4, 4'-diamino-1,2-diphenylethane, 2,4-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, m-aminophenol, m-aminobenzylamine, benzyldimethylamine, 2-(dimethylaminomethyl)phenol, triethanolamine, methylbenzylamine, α-(m-aminophenyl)ethylamine, α-(p-aminophenyl)ethylamine, diaminodiethyldimethyldiphenylmethane, α,α '-bis(4-aminophenyl)-p-diisopropylbenzene, etc. can be used. The amine-based curing agents mentioned above may be used alone, or two or more types may be used in combination in any combination and mixing ratio. The above-mentioned amine-based curing agent is preferably used so that the equivalent ratio of the functional groups in the curing agent to the epoxy groups in all epoxy resin components contained in the epoxy resin composition is in the range of 0.8 to 1.5. If it is within this range, it is preferable because it becomes difficult for unreacted epoxy groups or functional groups of the curing agent to remain.
제3급 아민으로서는, 1,8-디아자비시클로(5,4,0)운데센-7, 트리에틸렌디아민, 벤질디메틸아민, 트리에탄올아민,디메틸아미노에탄올, 트리스(디메틸아미노메틸)페놀 등을 사용할 수 있다. 제3급 아민은 1종만으로 이용해도, 2종 이상을 임의의 조합 및 배합 비율로 조합하여 이용해도 좋다. 상기 한 제3급 아민은, 에폭시 수지 조성물에 포함되는 전체 에폭시 수지 성분 중의 에폭시기에 대한 경화제 중의 작용기의 당량비로 0.8∼1.5의 범위가 되도록 이용하는 것이 바람직하다. 이 범위 내이면 미반응의 에폭시기나 경화제의 작용기가 잔류하기 어려워지기 때문에 바람직하다.As tertiary amines, 1,8-diazabicyclo(5,4,0)undecene-7, triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenol, etc. can be used. You can. Tertiary amines may be used alone or two or more types may be used in any combination and mixing ratio. The above-mentioned tertiary amine is preferably used so that the equivalent ratio of the functional groups in the curing agent to the epoxy groups in all epoxy resin components contained in the epoxy resin composition is in the range of 0.8 to 1.5. If it is within this range, it is preferable because it becomes difficult for unreacted epoxy groups or functional groups of the curing agent to remain.
산 무수물계 경화제로서는, 산 무수물, 산 무수물의 변성물 등을 들 수 있다. 산 무수물로서는, 예컨대, 프탈산 무수물, 트리멜리트산 무수물, 피로멜리트산 무수물, 벤조페논테트라카르복실산 무수물, 도데세닐숙신산 무수물, 폴리아디프산 무수물, 폴리아젤라산 무수물, 폴리세바신산 무수물, 폴리(에틸옥타데칸이산) 무수물, 폴리(페닐헥사데칸이산) 무수물, 테트라히드로프탈산 무수물, 메틸테트라히드로프탈산 무수물, 메틸헥사히드로프탈산 무수물, 헥사히드로프탈산 무수물, 메틸하이믹산 무수물, 트리알킬테트라히드로프탈산 무수물, 메틸시클로헥센디카르복실산 무수물, 메틸시클로헥센테트라카르복실산 무수물, 에틸렌글리콜비스트리멜리테이트 이무수물, 헤트산 무수물, 나딕산 무수물, 메틸나딕산 무수물, 5-(2,5-디옥소테트라히드로-3-푸라닐)-3-메틸-3-시클로헥산-1,2-디카르복실산 무수물, 3,4-디카르복시-1,2,3,4-테트라히드로-1-나프탈렌숙신산 이무수물, 1-메틸-디카르복시-1,2,3,4-테트라히드로-1-나프탈렌숙신산 이무수물 등을 들 수 있다. Examples of acid anhydride-based curing agents include acid anhydrides and modified products of acid anhydrides. Examples of acid anhydrides include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic anhydride, dodecenylsuccinic anhydride, polyadipic anhydride, polyazelaic anhydride, polysebacic anhydride, and poly(ethyl). Octadecanedioic acid) anhydride, poly(phenylhexadecanedioic acid) anhydride, tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, hexahydrophthalic anhydride, methylhymic acid anhydride, trialkyltetrahydrophthalic anhydride, methyl Cyclohexenedicarboxylic acid anhydride, methylcyclohexenetetracarboxylic acid anhydride, ethylene glycol bistrimellitate dianhydride, hetic acid anhydride, nadic acid anhydride, methylnadic acid anhydride, 5-(2,5-dioxotetrahydro) -3-furanyl)-3-methyl-3-cyclohexane-1,2-dicarboxylic anhydride, 3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthalenesuccinic dianhydride , 1-methyl-dicarboxy-1,2,3,4-tetrahydro-1-naphthalenesuccinic acid dianhydride, etc.
아미드계 경화제로서는 디시안디아미드 및 그 유도체, 폴리아미드 수지 등을 들 수 있다. Examples of amide-based curing agents include dicyandiamide and its derivatives, polyamide resins, and the like.
이미다졸류로서는, 2-페닐이미다졸, 2-에틸-4(5)-메틸이미다졸, 2-페닐-4-메틸이미다졸,1-벤질-2-메틸이미다졸, 1-벤질-2-페닐이미다졸, 1-시아노에틸-2-운데실이미다졸, 1-시아노-2-페닐이미다졸, 1-시아노에틸-2-운데실이미다졸트리멜리테이트, 1-시아노에틸-2-페닐이미다졸륨트리멜리테이트, 2,4-디아미노-6-[2'-메틸이미다졸릴-(1')]-에틸-s-트리아진, 2,4-디아미노-6-[2'-에틸-4'-메틸이미다졸릴-(1')]-에틸-s-트리아진, 2,4-디아미노-6-[2'-메틸이미다졸릴-(1')]-에틸-s-트리아진이소시아눌산 부가체, 2-페닐이미다졸이소시아눌산 부가체, 2-페닐-4,5-디히드록시메틸이미다졸, 2-페닐-4-메틸-5-히드록시메틸이미다졸 및 에폭시 수지와 상기 이미다졸류의 부가체 등이 예시된다. Examples of imidazole include 2-phenylimidazole, 2-ethyl-4(5)-methylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1- Benzyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimelli Tate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2 ,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methyl Midazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazolisocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2- Examples include phenyl-4-methyl-5-hydroxymethylimidazole, epoxy resins, and adducts of the imidazoles.
추가 에폭시 수지additional epoxy resin
본 발명에 있어서, 상기 추가 에폭시 수지는 상기 테트라메틸비페놀형 에폭시 수지와 상이한 에폭시 수지를 의미하는 것일 수 있다. 이와 같은 추가 에폭시 수지를 포함함으로써, 상기 테트라메틸비페놀형 에폭시 수지 조성물의 내열성, 내응력성, 내흡습성, 난연성 등을 더욱 향상시킬 수 있다.In the present invention, the additional epoxy resin may mean an epoxy resin different from the tetramethylbiphenol-type epoxy resin. By including such an additional epoxy resin, the heat resistance, stress resistance, moisture absorption resistance, flame retardancy, etc. of the tetramethylbiphenol type epoxy resin composition can be further improved.
상기 추가 에폭시 수지는 상기 조성물 전체 중량을 기준으로 5 중량% 내지 20 중량%로 포함될 수 있으며, 구체적으로, 상기 추가 에폭시 수지의 함량은 5 중량% 이상, 6 중량% 이상 또는 7 중량% 이상일 수 있고, 10 중량% 이하, 15 중량% 이하 또는 20 중량% 이하일 수 있다. 상기 추가 에폭시 수지의 함량이 5 중량% 미만이면 내열성, 내응력성, 내흡습성 또는 난연성의 추가 향상 효과가 미미할 수 있고, 20 중량% 초과이면 다른 성분들의 함량이 상대적으로 저하될 수 있으므로, 상기 범위 내에서 적정량을 사용할 수 있다.The additional epoxy resin may be included in an amount of 5% to 20% by weight based on the total weight of the composition. Specifically, the content of the additional epoxy resin may be 5% by weight or more, 6% by weight or more, or 7% by weight or more. , may be 10% by weight or less, 15% by weight or less, or 20% by weight or less. If the content of the additional epoxy resin is less than 5% by weight, the effect of additionally improving heat resistance, stress resistance, moisture absorption resistance, or flame retardancy may be minimal, and if it exceeds 20% by weight, the content of other components may be relatively reduced, so the above range It can be used in appropriate amounts.
예를 들어, 상기 추가 에폭시 수지는 비스페놀 A형 에폭시 수지, 바이페닐 에폭시 수지, 트리스페놀메탄형 에폭시 수지, 안트라센형 에폭시 수지, 페놀 변성 크실렌 수지형 에폭시 수지, 비스페놀시클로도데실형 에폭시 수지, 비스페놀디이소프로필리덴레조르신형 에폭시 수지, 비스페놀 F형 에폭시 수지, 비스페놀 AD형 에폭시 수지, 하이드로퀴논형 에폭시 수지, 메틸하이드로퀴논형 에폭시 수지, 디부틸하이드로퀴논형 에폭시 수지, 레조르신형 에폭시 수지, 메틸레조르신형 에폭시 수지, 비페놀형 에폭시 수지, 상기 화학식 1로 표시되는 테트라메틸비페놀형 에폭시 수지 이외의 테트라메틸비페놀형 에폭시 수지, 테트라메틸비스페놀 F형 에폭시 수지, 디히드록시디페닐에테르형 에폭시 수지, 티오디페놀류로부터 유도되는 에폭시 수지, 디히드록시나프탈렌형 에폭시 수지, 디히드록시안트라센형 에폭시 수지, 디히드록시디히드로안트라센형 에폭시 수지, 디시클로펜타디엔형 에폭시 수지, 디히드록시스틸벤류로부터 유도되는 에폭시 수지, 페놀노볼락형 에폭시 수지, 크레졸노볼락형 에폭시 수지, 비스페놀 A 노볼락형 에폭시 수지, 나프톨노볼락형 에폭시 수지, 페놀아랄킬형 에폭시 수지, 나프톨아랄킬형 에폭시 수지, 비페닐아랄킬형 에폭시 수지, 테르펜페놀형 에폭시 수지, 디시클로펜타디엔페놀형 에폭시 수지, 페놀·히드록시벤즈알데히드의 축합물로부터 유도되는 에폭시 수지, 페놀·크로톤알데히드의 축합물로부터 유도되는 에폭시 수지, 페놀·글리옥살의 축합물로부터 유도되는 에폭시 수지, 중질유 또는 피치류와 페놀류와 포름알데히드류의 공축합 수지로부터 유도되는 에폭시 수지, 디아미노디페닐메탄으로 부터 유도되는 에폭시 수지, 아미노페놀로부터 유도되는 에폭시 수지, 크실렌디아민으로부터 유도되는 에폭시 수지, 메틸헥사히드로프탈산으로부터 유도되는 에폭시 수지, 다이머산으로부터 유도되는 에폭시 수지 등을 들 수 있다. 이들은 1종만으로 이용해도, 2종 이상을 임의의 조합 및 배합 비율로 이용해도 좋다. For example, the additional epoxy resin is bisphenol A type epoxy resin, biphenyl epoxy resin, trisphenolmethane type epoxy resin, anthracene type epoxy resin, phenol modified xylene resin type epoxy resin, bisphenol cyclododecyl type epoxy resin, bisphenol diiso Propylidene resorcin type epoxy resin, bisphenol F type epoxy resin, bisphenol AD type epoxy resin, hydroquinone type epoxy resin, methylhydroquinone type epoxy resin, dibutylhydroquinone type epoxy resin, resorcin type epoxy resin, methylresorcin. New epoxy resins, biphenol-type epoxy resins, tetramethylbiphenol-type epoxy resins other than the tetramethylbiphenol-type epoxy resin represented by the above formula (1), tetramethylbisphenol F-type epoxy resins, and dihydroxydiphenyl ether-type epoxy resins. , epoxy resins derived from thiodiphenols, dihydroxynaphthalene type epoxy resins, dihydroxyanthracene type epoxy resins, dihydroxydihydroanthracene type epoxy resins, dicyclopentadiene type epoxy resins, and dihydroxystilbenes. Derivatized epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak type epoxy resin, naphthol novolak type epoxy resin, phenol aralkyl type epoxy resin, naphthol aralkyl type epoxy resin, biphenyl aralkyl type Epoxy resin, terpene phenol type epoxy resin, dicyclopentadiene phenol type epoxy resin, epoxy resin derived from a condensate of phenol and hydroxybenzaldehyde, epoxy resin derived from a condensate of phenol and crotonaldehyde, phenol and glyoxal. Epoxy resins derived from condensates, epoxy resins derived from cocondensation resins of heavy oils or pitches with phenols and formaldehydes, epoxy resins derived from diaminodiphenylmethane, epoxy resins derived from aminophenols, xylenediamine Examples include epoxy resins derived from methylhexahydrophthalic acid, epoxy resins derived from dimer acid, and the like. These may be used alone or two or more types may be used in any combination and mixing ratio.
경화 촉진제 cure accelerator
본 발명 있어서, 상기 경화 촉진제는 경화시간을 단축시키고, 경화 온도를 저온화함으로써, 원하는 경화물을 얻기 쉽게 할 수 있다.In the present invention, the curing accelerator shortens the curing time and lowers the curing temperature, making it easier to obtain a desired cured product.
상기 경화 촉진제는 상기 조성물 전체 중량을 기준으로 0.01 중량% 내지 1 중량%로 포함될 수 있으며, 구체적으로, 상기 경화 촉진제의 함량은 0.01 중량% 이상, 0.03 중량% 이상 또는 0.05 중량% 이상일 수 있고, 0.5 중량% 이하, 0.8 중량% 이하 또는 1 중량% 이하일 수 있다. 상기 경화 촉진제의 함량이 0.01 중량% 미만이면 경화 촉진 효과가 미미할 수 있고, 20 중량% 초과이면 과도하게 경화가 진행되어 오히려 조성물의 물성이 저하될 수 있으므로, 상기 범위 내에서 적정량을 사용할 수 있다.The curing accelerator may be included in an amount of 0.01% by weight to 1% by weight based on the total weight of the composition. Specifically, the content of the curing accelerator may be 0.01% by weight or more, 0.03% by weight or more, or 0.05% by weight or more, and 0.5% by weight or more. It may be less than 0.8% by weight or less than 1% by weight. If the content of the curing accelerator is less than 0.01% by weight, the curing accelerator effect may be minimal, and if it is more than 20% by weight, excessive curing may occur and the physical properties of the composition may be reduced, so an appropriate amount can be used within the above range.
상기 경화 촉진제는 특별히 제한되지 않으나, 구체예로서는, 유기 포스핀류, 포스포늄염 등의 인계 화합물, 테트라페닐붕소염, 유기산 디히드라지드, 할로겐화 붕소 아민 착체 등을 들 수 있다.The curing accelerator is not particularly limited, and specific examples include organic phosphines, phosphorus-based compounds such as phosphonium salts, tetraphenyl boron salts, organic acid dihydrazide, boron amine complexes, and the like.
경화 촉진제로서 사용 가능한 인계 화합물로서는, 트리페닐포스핀, 디페닐(p-톨릴)포스핀, 트리스(알킬페닐)포스핀, 트리스(알콕시페닐)포스핀, 트리스(알킬·알콕시페닐)포스핀, 트리스(디알킬페닐)포스핀, 트리스(트리알킬페닐)포스핀, 트리스(테트라알킬페닐)포스핀, 트리스(디알콕시페닐)포스핀, 트리스(트리알콕시페닐)포스핀,트리스(테트라알콕시페닐)포스핀, 트리알킬포스핀, 디알킬아릴포스핀, 알킬디아릴포스핀 등의 유기 포스핀류 또는 이들 유기 포스핀류와 유기 붕소류의 착체나 이들 유기 포스핀류와 무수 말레산, 1,4-벤조퀴논, 2,5-톨루퀴논, 1,4-나프토퀴논, 2,3-디메틸벤조퀴논, 2,6-디메틸벤조퀴논, 2,3-디메톡시-5-메틸-1,4-벤조퀴논, 2,3-디메톡시-1,4-벤조퀴논, 페닐-1,4-벤조퀴논 등의 퀴논 화합물, 디아조페닐메탄 등의 화합물을 부가하여 이루어지는 화합물 등이 예시된다. Examples of phosphorus-based compounds that can be used as a curing accelerator include triphenylphosphine, diphenyl(p-tolyl)phosphine, tris(alkylphenyl)phosphine, tris(alkoxyphenyl)phosphine, tris(alkyl·alkoxyphenyl)phosphine, Tris(dialkylphenyl)phosphine, tris(trialkylphenyl)phosphine, tris(tetraalkylphenyl)phosphine, tris(dialkoxyphenyl)phosphine, tris(trialkoxyphenyl)phosphine, tris(tetraalkoxyphenyl) ) Organic phosphines such as phosphine, trialkyl phosphine, dialkylaryl phosphine, and alkyl diaryl phosphine, or complexes of these organic phosphines and organic boron, or these organic phosphines and maleic anhydride, 1,4- Benzoquinone, 2,5-toluquinone, 1,4-naphthoquinone, 2,3-dimethylbenzoquinone, 2,6-dimethylbenzoquinone, 2,3-dimethoxy-5-methyl-1,4-benzo Examples include quinone compounds such as quinone, 2,3-dimethoxy-1,4-benzoquinone, and phenyl-1,4-benzoquinone, and compounds obtained by adding compounds such as diazophenylmethane.
상기 경화 촉진제 중에서도 유기 포스핀류, 포스포늄염이 바람직하고, 유기 포스핀류가 가장 바람직하다. 또한, 경화 촉진제는, 상기에 든 것 중, 1종만으로 이용해도 좋고, 2종 이상을 임의의 조합 및 비율로 혼합하여 이용해도 좋다. Among the above curing accelerators, organic phosphines and phosphonium salts are preferable, and organic phosphines are most preferable. In addition, the curing accelerator may be used alone among those listed above, or two or more types may be mixed and used in any combination and ratio.
무기 충전재inorganic filler
본 발명에 있어서, 상기 무기 충전재는 상기 조성물을 반도체 봉지재로 적용할 경우의 열팽창 계수를 내부의 실리콘 칩이나 리드 프레임에 가깝게 하고 또한, 반도체 밀봉재 전체의 흡습량을 줄여, 크랙을 방지하는 기능을 할 수 있다. In the present invention, the inorganic filler has the function of preventing cracks by making the thermal expansion coefficient closer to that of the internal silicon chip or lead frame when applying the composition as a semiconductor encapsulating material and reducing the amount of moisture absorption of the entire semiconductor encapsulating material. can do.
상기 무기 충전재의 함량은 이와 같은 반도체 봉지재로서의 활용성을 감안하여 상기 조성물 중량을 기준으로 50 중량% 내지 70 중량%로 포함될 수 있으며, 구체적으로, 상기 무기 충전재의 함량은 50 중량% 이상, 55 중량% 이상 또는 60 중량% 이상일 수 있고, 65 중량% 이하, 68 중량% 이하 또는 70 중량% 이하일 수 있다. The content of the inorganic filler may be 50% to 70% by weight based on the weight of the composition, considering its utility as a semiconductor encapsulation material. Specifically, the content of the inorganic filler may be 50% by weight or more, 55% by weight. It may be more than 60% by weight or more than 60% by weight, and less than 65% by weight, less than 68% by weight, or less than 70% by weight.
또한, 상기 무기 충전재는 당업계에서 통상적을 사용되는 것이라면 특별히 제한되지 않는다. 예를 들어, 상기 무기 충전재는 결정성 실리카를 포함할 수 있다.Additionally, the inorganic filler is not particularly limited as long as it is one commonly used in the art. For example, the inorganic filler may include crystalline silica.
커플링제Coupling agent
본 발명에 있어서, 상기 커플링제는 매트릭스인 테트라메틸비페놀형 에폭시 수지와 무기 충전재의 접착성을 향상시킬 수 있으며, 이에 상기 커플링제는 무기 충전재와 병용하여 사용할 수 있다. In the present invention, the coupling agent can improve the adhesion between the matrix tetramethylbiphenol-type epoxy resin and the inorganic filler, and thus the coupling agent can be used in combination with the inorganic filler.
상기 커플링제는 이와 같은 무기 충전재의 접착성 향상 효과를 고려하여 상기 조성물 전체 중량을 기준으로 1 중량% 내지 10 중량%로 사용될 수 있으며, 구체적으로 상기 커플링제의 함량은 1 중량% 이상, 3 중량% 이상 또는 5 중량% 이상일 수 있고, 8 중량% 이하 또는 10 중량% 이하일 수 있다.Considering the effect of improving the adhesion of the inorganic filler, the coupling agent may be used in an amount of 1% to 10% by weight based on the total weight of the composition. Specifically, the content of the coupling agent is 1% by weight or more, 3% by weight. It may be more than % or more than 5% by weight, and it may be less than 8% by weight or less than 10% by weight.
상기 커플링제로서는 실란 커플링제, 티타네이트 커플링제 등을 들 수 있다. Examples of the coupling agent include silane coupling agent and titanate coupling agent.
실란 커플링제로서는, 예컨대, γ-글리시독시프로필트리메톡시실란, γ-글리시독시프로필트리에톡시실란, β-(3,4-에폭시시클로헥실)에틸트리메톡시실란 등의 에폭시실란, γ-아미노프로필트리에톡시실란, N-β(아미노에틸)γ-아미노프로필트리메톡시실란, N-β(아미노에틸)γ-아미노프로필메틸디메톡시실란, γ-아미노프로필트리메톡시실란, γ-우레이도프로필트리에톡시실란 등의 아미노실란, 3-메르캅토프로필트리메톡시실란 등의 메르캅토실란, p-스티릴트리메톡시실란, 비닐트리클로로실란, 비닐트리스(β-메톡시에톡시)실란, 비닐트리메톡시실란, 비닐트리에톡시실란, γ-메타크릴옥시프로필트리메톡시실란 등의 비닐실란, 또한, 에폭시계, 아미노계, 비닐계의 고분자 타입의 실란 등을 들 수 있다.Silane coupling agents include, for example, epoxysilanes such as γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, and β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane; γ-aminopropyltriethoxysilane, N-β(aminoethyl)γ-aminopropyltrimethoxysilane, N-β(aminoethyl)γ-aminopropylmethyldimethoxysilane, γ-aminopropyltrimethoxysilane, Amino silanes such as γ-ureidopropyltriethoxysilane, mercaptosilanes such as 3-mercaptopropyltrimethoxysilane, p-styryltrimethoxysilane, vinyltrichlorosilane, and vinyltris (β-methoxysilane). Vinyl silanes such as ethoxy) silane, vinyl trimethoxy silane, vinyl triethoxy silane, and γ-methacryloxypropyl trimethoxy silane, as well as epoxy-based, amino-based, and vinyl-based polymer-type silanes. You can.
티타네이트 커플링제로서는, 예컨대, 이소프로필트리이소스테아로일티타네이트, 이소프로필트리(N-아미노에틸·아미노에틸)티타네이트, 이소프로필비스(디옥틸포스페이트)티타네이트, 테트라이소프로필비스(디옥틸포스파이트)티타네이트, 테트라옥틸비스(디트리데실포스파이트)티타네이트, 테트라(2,2-디알릴옥시메틸-1-부틸)비스(디트리데실)포스파이트티타네이트, 비스(디옥틸파이로포스페이트)옥시아세테이트티타네이트, 비스(디옥틸파이로포스페이트)에틸렌티타네이트 등을 들 수 있다. 이들 커플링제는, 모두 1종만으로 이용해도 좋고, 2종 이상을 임의의 조합 및 비율로 혼합하여 이용해도 좋다. 본 발명의 에폭시 수지 조성물에 커플링제를 이용하는 경우, 그 배합량은, 전체 에폭시 수지 성분 100 중량부에 대해, 바람직하게는 0.1∼3.0 중량부이다. 커플링제의 배합량이 상기 범위 이하이면, 커플링제를 배합한 것에 의한 매트릭스인 에폭시 수지와 무기 충전재의 밀착성의 향상 효과가 낮아지고, 한편, 커플링제의 배합량이 상기 범위 이상이면, 얻어지는 경화물로부터 커플링제가 블리드 아웃될 가능성이 커서 부적합 하다.As titanate coupling agents, for example, isopropyltriisostearoyl titanate, isopropyltri(N-aminoethyl·aminoethyl)titanate, isopropylbis(dioctylphosphate)titanate, and tetraisopropylbis(di). Octylphosphite)titanate, tetraoctylbis(ditridecylphosphite)titanate, tetra(2,2-diallyloxymethyl-1-butyl)bis(ditridecyl)phosphite titanate, bis(dioctyl) Pyrophosphate) oxyacetate titanate, bis (dioctyl pyrophosphate) ethylene titanate, etc. are mentioned. These coupling agents may be used alone, or two or more types may be mixed and used in any combination and ratio. When a coupling agent is used in the epoxy resin composition of the present invention, the compounding amount is preferably 0.1 to 3.0 parts by weight based on 100 parts by weight of all epoxy resin components. If the compounding amount of the coupling agent is less than the above range, the effect of improving the adhesion between the epoxy resin as a matrix and the inorganic filler by blending the coupling agent decreases. On the other hand, if the compounding amount of the coupling agent is more than the above range, the effect of improving the adhesion between the inorganic filler and the epoxy resin that is the matrix is reduced. It is unsuitable as there is a high possibility that the ring material will bleed out.
그 외의 성분other ingredients
본 발명의 테트라메틸비페놀형 에폭시 수지 조성물에는, 상기한 것 이외의 성분을 배합할 수 있다. 그 외의 성분으로서는 예를 들면, 난연제, 가소제, 이형제, 반응성 희석제, 안료 등을 들수 있고, 필요에 따라 적절히 배합할 수 있다. 경화물에 필요한 물성 향상을 위해 적당한 재료를 투입하여 경화물의 특성을 확보할 수 있다.Components other than those mentioned above can be added to the tetramethylbiphenol type epoxy resin composition of the present invention. Other components include, for example, flame retardants, plasticizers, mold release agents, reactive diluents, pigments, etc., and can be blended appropriately as needed. In order to improve the properties required for the cured product, the properties of the cured product can be secured by adding appropriate materials.
경화물hardened material
본 발명은 또한, 상기 테트라메틸비페놀형 에폭시 수지를 포함하는 조성물을 경화시켜 제조된 경화물에 관한 것으로, 상기 경화물은, 내열성, 내흡습성, 내열성, 특히 저유전율 및 전기절연 특성에 있어서 우수한 특성을 갖는 것이다. The present invention also relates to a cured product manufactured by curing a composition containing the tetramethylbiphenol type epoxy resin, wherein the cured product is excellent in heat resistance, moisture absorption resistance, heat resistance, especially low dielectric constant and electrical insulation properties. It has characteristics.
본 발명의 테트라메틸비페놀형 에폭시 수지 조성물을 경화시키는 방법에 대해서는 특별히 한정되지 않으나, 통상, 가열에 의한 열경화 반응에 의해 경화물을 얻을 수 있다. 열경화 반응 시에는, 이용한 경화제의 종류에 따라 경화 온도를 적절히 선택하는 것이 바람직하다. 예를 들어, 상기 경화 온도는 통상 130℃ 내지 180℃ 일 수 있다. 또한 반응 시간은, 0.1 내지 20 시간일 수 있고, 구체적으로 0.1 시간 이상, 0.5 시간 이상 또는 1 시간 이상일 수 있고 10 시간 이하, 15 시간 이하 또는 20 시간 이하일 수 있다. 반응 시간이 상기 범위 이하이면 경화 반응이 충분히 진행되기 어려워 바람직한 물성을 확보하기 힘들며, 반응 시간이 상기 범위 이상이면 가열에 의한 열화, 가열 시의 에너지 손실이 커져 문제가 발생할 수 있다.There are no particular limitations on the method for curing the tetramethylbiphenol-type epoxy resin composition of the present invention, but usually a cured product can be obtained through a thermosetting reaction by heating. During the thermal curing reaction, it is desirable to appropriately select the curing temperature depending on the type of curing agent used. For example, the curing temperature may typically be 130°C to 180°C. Additionally, the reaction time may be 0.1 to 20 hours, specifically 0.1 hour or more, 0.5 hour or more, or 1 hour or more, and may be 10 hours or less, 15 hours or less, or 20 hours or less. If the reaction time is below the above range, it is difficult for the curing reaction to proceed sufficiently, making it difficult to secure desirable physical properties. If the reaction time is above the above range, problems may occur due to deterioration due to heating and increased energy loss during heating.
이하 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시하나, 하기 실시예는 본 발명을 예시하는 것일 뿐 본 발명의 범주 및 기술사상 범위 내에서 다양한 변경 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변경 및 수정이 첨부된 특허청구범위에 속하는 것도 당연한 것이다.Preferred examples are presented below to aid understanding of the present invention. However, the following examples are merely illustrative of the present invention, and it is clear to those skilled in the art that various changes and modifications can be made within the scope and spirit of the present invention. It is natural that changes and modifications fall within the scope of the attached patent claims.
하기 실시예 및 비교예에서는, 테트라메틸비페놀형 에폭시 수지 합성 시, 하기 표 1에 기재된 바와 같은 카르복실산 또는 물을 이용하여, 정제 공정을 실시하였다.In the following examples and comparative examples, when synthesizing tetramethylbiphenol-type epoxy resin, a purification process was performed using carboxylic acid or water as shown in Table 1 below.
또한, 하기 실시예 및 비교예에서는, 테트라메틸비페놀형 에폭시 수지 조성물 제조 시, 하기 표 2에 기재된 바와 같은 조성에 따라 제조 공정을 실시하였다.In addition, in the following Examples and Comparative Examples, when manufacturing the tetramethylbiphenol-type epoxy resin composition, the manufacturing process was performed according to the composition as shown in Table 2 below.
에폭시 수지Tetramethylbiphenol type
epoxy resin
에폭시 수지addition
epoxy resin
실시예 1Example 1
1-1.1-1. 테트라메틸비페놀형 에폭시 수지 합성Synthesis of tetramethylbiphenol type epoxy resin
3L의 사구 플라스크에 테트라메틸비페놀 300g, 에피클로로히드린 1386g, 이소프로필알콜 554g 및 물 191g을 넣고, 65℃로 승온하여 용해시킨 후, 50%의 수산화나트륨 수용액 240g을 180분에 걸쳐 적하하였다. 적하 종료 후, 65℃에서 1시간 숙성을 하여 반응을 완료하고, 물을 투입하여 정치, 분리한 수층으로부터 부생염 및 과잉의 수산화나트륨을 제거하였다. 이 후, 감압 승온하여 잔류한 에피클로로히드린과 이소프로필알콜을 증류시켜 제거하여, 에폭시수지를 합성하였다.300 g of tetramethyl biphenol, 1386 g of epichlorohydrin, 554 g of isopropyl alcohol, and 191 g of water were added to a 3L four-necked flask, heated to 65°C to dissolve, and then 240g of a 50% aqueous sodium hydroxide solution was added dropwise over 180 minutes. . After completion of the dropwise addition, the reaction was completed by maturing at 65°C for 1 hour, water was added, allowed to stand, and by-product salts and excess sodium hydroxide were removed from the separated aqueous layer. Afterwards, the temperature was raised under reduced pressure, the remaining epichlorohydrin and isopropyl alcohol were distilled off, and an epoxy resin was synthesized.
상기 에폭시수지를 메틸이소부틸케톤(methyl isobutyl ketone, MIBK) 600g에 용해시키고, 50% 수산화 칼륨 수용액 15g을 첨가하여 80℃의 온도에서 1.5시간 동안 첨가하면서 반응시켰다. 그 후, 물을 투입하여 pH 7이 될 때까지 수세한 후 물 층을 제거하여, 테트라메틸비페놀형 에폭시 수지를 합성하였다.The epoxy resin was dissolved in 600 g of methyl isobutyl ketone (MIBK), and 15 g of 50% potassium hydroxide aqueous solution was added and reacted for 1.5 hours at a temperature of 80°C. Afterwards, water was added and washed until pH reached 7, and the water layer was removed to synthesize tetramethylbiphenol-type epoxy resin.
상기 표 1에 기재된 바에 따라, 상기 합성된 테트라메틸비페놀형 에폭시 수지와 동일한 양의 10% 옥살산 수용액을 사용하여, 상기 테트라메틸비페놀형 에폭시 수지를 3회 수세하여 금속 양이온을 제거하였다. 그 후, 150℃ 온도에서 40 torr 이하로 감압하여 잔류 메틸이소부틸케톤을 완전히 제거하여, 정제 공정을 실시하였다. As described in Table 1, the tetramethylbiphenol-type epoxy resin was washed three times using the same amount of 10% oxalic acid aqueous solution as the synthesized tetramethylbiphenol-type epoxy resin to remove metal cations. Afterwards, the pressure was reduced to 40 torr or less at a temperature of 150°C to completely remove residual methyl isobutyl ketone, and a purification process was performed.
1-2.1-2. 테트라메틸비페놀형 에폭시 수지 조성물 제조Manufacturing of tetramethylbiphenol type epoxy resin composition
상기 표 2에 기재된 바와 같은 조성에 따라, 상기 1-1에서 합성된 테트라메틸비페놀형 에폭시 수지, 추가 에폭시 수지, 경화제, 경화촉진제 및 무기 충전재를 혼합하여 테트라메틸비페놀형 에폭시 수지 조성물을 제조하였다.According to the composition as shown in Table 2, prepare a tetramethylbiphenol-type epoxy resin composition by mixing the tetramethylbiphenol-type epoxy resin synthesized in 1-1, additional epoxy resin, curing agent, curing accelerator, and inorganic filler. did.
1-3.1-3. 경화물 제조Hardened product manufacturing
상기 1-2에서 제조된 테트라메틸비페놀형 에폭시 수지 조성물을 몰딩 및 경화시켜 경화물을 제조였다.A cured product was prepared by molding and curing the tetramethylbiphenol-type epoxy resin composition prepared in 1-2 above.
상기 몰딩 및 경화 공정은, 프레스 장비(BUEHLER社, SimpliMet 1000 인 Automatic Mounting Press 장비)를 이용하여 실시하였다. 구체적으로, 180℃ 온도 및 80 bar 압력 하에서 몰딩 공정을 실시하였다. 그 후, 20분 동안 경화시키고, 물을 이용하여 10분 동안 냉각시킨 다음, 180℃에서 2시간 동안 후경화을 진행하여 경화 공정을 실시하였다. The molding and curing process was performed using press equipment (BUEHLER, SimpliMet 1000 Automatic Mounting Press equipment). Specifically, the molding process was performed at a temperature of 180°C and a pressure of 80 bar. After that, it was cured for 20 minutes, cooled with water for 10 minutes, and then post-cured at 180°C for 2 hours to perform the curing process.
실시예 2Example 2
15% 옥산살 수용액을 이용하여 2회 수세한 것을 제외하고, 실시예 1과 동일한 방법으로 테트라메틸비페놀형 에폭시 수지, 테트라메틸비페놀형 에폭시 수지 조성물 및 경화물을 제조하였다.Tetramethylbiphenol-type epoxy resin, tetramethylbiphenol-type epoxy resin composition, and cured product were prepared in the same manner as in Example 1, except that the product was washed twice with a 15% aqueous oxane solution.
실시예 3Example 3
20% 옥산살 수용액을 이용하여 2회 수세한 것을 제외하고, 실시예 1과 동일한 방법으로 테트라메틸비페놀형 에폭시 수지, 테트라메틸비페놀형 에폭시 수지 조성물 및 경화물을 제조하였다.Tetramethylbiphenol-type epoxy resin, tetramethylbiphenol-type epoxy resin composition, and cured product were prepared in the same manner as in Example 1, except that they were washed twice with a 20% aqueous oxane solution.
비교예 1Comparative Example 1
10% 옥살산 수용액을 이용하여 수세하는 정제 공정을 실시하지 않은 것을 제외하고, 실시예 1과 동일한 방법으로 테트라메틸비페놀형 에폭시 수지, 테트라메틸비페놀형 에폭시 수지 조성물 및 경화물을 제조하였다.Tetramethylbiphenol-type epoxy resin, tetramethylbiphenol-type epoxy resin composition, and cured product were prepared in the same manner as in Example 1, except that the purification process of washing with 10% aqueous oxalic acid was not performed.
비교예 2Comparative Example 2
10% 옥살산 수용액 대신 물을 이용하여 3회 수세한 것을 제외하고, 실시예 1과 동일한 방법으로 테트라메틸비페놀형 에폭시 수지, 테트라메틸비페놀형 에폭시 수지 조성물 및 경화물을 제조하였다.A tetramethylbiphenol-type epoxy resin, a tetramethylbiphenol-type epoxy resin composition, and a cured product were prepared in the same manner as in Example 1, except that the product was washed three times with water instead of a 10% aqueous oxalic acid solution.
실험예 1: 물성평가Experimental Example 1: Physical property evaluation
실시예 1 내지 3 및 비교예 1 내지 2에서 제조된 테트라메틸비페놀형 에폭시 수지 및 이를 이용하여 제조된 경화물에 대한 물성평가를 위하여, 아래와 같은 방법으로 유전상수와 유전손실, 유리전이온도, 흡습율 및 총이온량을 측정하였다.In order to evaluate the physical properties of the tetramethylbiphenol-type epoxy resin prepared in Examples 1 to 3 and Comparative Examples 1 to 2 and the cured product prepared using the same, the dielectric constant, dielectric loss, glass transition temperature, Moisture absorption rate and total ion amount were measured.
(1) 유전상수(Dielectric Constant, Dk) 및 유전손실(Dissipation Factor, Df) (1) Dielectric Constant (D k ) and Dielectric Loss (Dissipation Factor, D f )
JIS-C-6481 방법에 의해 유전상수 및 유전손실을 측정하였다. Agilent E4991A RF Impedance/Material analyzer를 이용하여 측정하였으며, Dielectric constant and dielectric loss were measured by the JIS-C-6481 method. Measurements were made using an Agilent E4991A RF Impedance/Material analyzer.
측정된 유전상수 및 유전손실 수치가 낮을수록 경화물의 전기적 특성이 우수한 것으로 평가하였다.The lower the measured dielectric constant and dielectric loss values, the better the electrical properties of the cured product were evaluated.
(2) 유리전이온도(Tg) 측정(2) Glass transition temperature (Tg) measurement
유리전이온도(Tg)는 시차열분석기(Differential Scanning Calorimetry, DSC)를 이용하여 측정하였다 (측정조건: 분당 10℃ 승온, 30 ~ 250℃ 범위).Glass transition temperature (Tg) was measured using differential scanning calorimetry (DSC) (measurement conditions: temperature rise of 10°C per minute, range of 30 to 250°C).
측정된 유리전이온도가 높을수록 경화물의 내열성이 높은 것으로 평가하였다.The higher the measured glass transition temperature, the higher the heat resistance of the cured product was evaluated.
(3) 흡습율(Water Absorption, W/A, wt%) 측정(3) Measurement of moisture absorption (W/A, wt%)
흡습율은 100℃의 끊는 물에 경화물을 2시간 동안 방치한 후, 무게 증가율(wt%)을 계산하여 흡습율을 얻었다. The moisture absorption rate was obtained by leaving the cured product in boiling water at 100°C for 2 hours and then calculating the weight increase rate (wt%).
측정된 흡습율이 낮을수록 경화물의 내흡습성과 같은 물성이 우수한 것으로 평가하였다.The lower the measured moisture absorption rate, the better the physical properties such as moisture absorption resistance of the cured product were evaluated.
(4) 나트륨 이온량 및 총 금속 이온량 정량 (ppb)(4) Quantification of sodium ion amount and total metal ion amount (ppb)
유도 결합 플라즈마 질량분석법(ICP-MS)법으로, 실시예 1 내지 3 및 비교예 1 내지 2에서 합성된 테트라메틸비페놀형 에폭시 수지 내에 금속 양이온의 양을 정량하였다. 상기 금속은 칼슘, 철, 나트륨, 마그네슘, 칼륨, 망간, 알루미늄 암모늄 및 리튬을 포함하며, 이들 금속 양이온의 합을 정량하여 총 금속 이온량으로 표시하였다.The amount of metal cations in the tetramethylbiphenol-type epoxy resin synthesized in Examples 1 to 3 and Comparative Examples 1 to 2 was quantified using inductively coupled plasma mass spectrometry (ICP-MS). The metals include calcium, iron, sodium, magnesium, potassium, manganese, aluminum ammonium, and lithium, and the sum of these metal cations was quantified and expressed as the total amount of metal ions.
정량된 총 이온량의 수치가 낮을수록 테트라메틸비페놀형 에폭시 수지의 순도가 높은 것으로 평가하였다.The lower the quantified total ion amount, the higher the purity of the tetramethylbiphenol-type epoxy resin was evaluated.
그 결과, 상기 표 3에 나타난 바와 같이, 실시예 1 내지 3은 비교예 1 내지 2에 비해 경화물의 유전상수(Dk) 및 유전손실(Df) 측정값이 작아 상대적으로 전기적 특성이 우수한 것을 알 수 있다.또한, 실시예 1 내지 3은 비교예 1 내지 2에 비해 유리전이온도가 높아 내열특성이 좋으며, 흡습율이 낮아 내흡습성이 좋으며, 나트륨 이온 함량과 총 금속 이온량이 작아 순도가 높은 것을 알 수 있다.As a result, as shown in Table 3, Examples 1 to 3 have relatively excellent electrical properties because the measured dielectric constant (D k ) and dielectric loss (D f ) of the cured product are lower than those of Comparative Examples 1 to 2. It can be seen. In addition, Examples 1 to 3 have a higher glass transition temperature and good heat resistance characteristics compared to Comparative Examples 1 to 2, have a low moisture absorption rate and thus have good moisture absorption resistance, and have high purity due to the small sodium ion content and total metal ion amount. You can see that
이로부터, 테트라메틸비페놀형 에폭시 수지 합성 시, 카르복실산을 이용하여 정제 공정을 실시할 경우, 고순도의 테트라메틸비페놀형 에폭시 수지를 얻을 수 있었다. 또한, 상기 고순도의 테트라메틸비페놀형 에폭시 수지를 이용하여 제조된 경화물은 우수한 전기적 특성, 내열성 및 내흡습성을 나타내어 저유전율 및 전기절연 특성이 요구되는 전기·전자 재료 분야, 특히 반도체 봉지재 분야에 적용 가능할 것임을 알 수 있다. From this, when synthesizing the tetramethylbiphenol-type epoxy resin and performing a purification process using carboxylic acid, a high-purity tetramethylbiphenol-type epoxy resin could be obtained. In addition, the cured product manufactured using the high-purity tetramethylbiphenol-type epoxy resin exhibits excellent electrical properties, heat resistance, and moisture absorption resistance, and is used in the field of electrical and electronic materials that require low dielectric constant and electrical insulation properties, especially in the field of semiconductor encapsulation materials. It can be seen that it will be applicable to .
이상에서 본 발명은 비록 한정된 실시예와 도면에 의해 설명되었으나, 본 발명은 이것에 의해 한정되지 않으며, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 본 발명의 기술사상과 아래에 기재될 특허청구범위의 균등범위 내에서 다양한 수정 및 변형이 가능함은 물론이다.Although the present invention has been described above with limited examples and drawings, the present invention is not limited thereto, and the technical idea of the present invention and the following description will be provided by those skilled in the art in the technical field to which the present invention pertains. Of course, various modifications and variations are possible within the scope of equivalence of the patent claims.
Claims (9)
<화학식 1>
(상기 화학식 1에서 n은 0 내지 5의 정수임)
상기 테트라메틸비페놀형 에폭시 수지 내에 포함된 금속 양이온의 함량은 2,000 ppb 이하이고,
상기 금속은 칼슘, 철, 나트륨, 마그네슘, 칼륨, 망간, 알루미늄 암모늄 및 리튬을 포함하고,
상기 테트라메틸비페놀형 에폭시 수지 내에 포함된 나트륨 양이온의 함량은 1,000 ppb 이하이고,
상기 테트라메틸비페놀형 에폭시 수지는 하기 (S1) 내지 (S3) 단계를 포함하는 제조방법에 의해 제조되는 것인, 테트라메틸비페놀형 에폭시 수지:
(S1) 하기 화학식 2로 표시되는 테트라메틸페놀(tetramethylphenol) 1 몰에 대하여, 하기 화학식 3으로 표시되는 에피클로로히드린(epichlorohydrin) 1.6 내지 20 몰을 50℃ 내지 150℃에서 반응시켜, 하기 화학식 4로 표시되는 할로히드린(halohydrin) 수지를 형성하는 단계,
<화학식 2>
,
<화학식 3>
,
<화학식 4>
(상기 화학식 4에서, n은 0 내지 5의 정수임);
(S2) 상기 (S1) 단계에서 제조된 상기 할로히드린 수지를 알칼리 금속 수산화물과 반응시키되, 상기 할로히드린 수지 1.0 몰 당 상기 알칼리 금속 수산화물 1.0 몰 내지 4.0몰을 반응시켜 상기 화학식 1로 표시되는 테트라메틸비페놀형 에폭시 수지를 합성하는 단계; 및
(S3) 상기 (S2) 단계에서 합성된 테트라메틸비페놀형 에폭시 수지를 카르복실산 수용액과 반응시켜 금속 양이온을 제거하여 정제하는 단계.A tetramethylbiphenol-type epoxy resin represented by the following formula (1):
<Formula 1>
(In Formula 1, n is an integer from 0 to 5)
The content of metal cations contained in the tetramethylbiphenol-type epoxy resin is 2,000 ppb or less,
The metals include calcium, iron, sodium, magnesium, potassium, manganese, aluminum ammonium and lithium,
The content of sodium cations contained in the tetramethylbiphenol-type epoxy resin is 1,000 ppb or less,
The tetramethylbiphenol-type epoxy resin is manufactured by a manufacturing method comprising the following steps (S1) to (S3):
(S1) For 1 mole of tetramethylphenol represented by the following formula 2, 1.6 to 20 moles of epichlorohydrin represented by the following formula 3 are reacted at 50°C to 150°C to obtain the following formula 4 Forming a halohydrin resin represented by,
<Formula 2>
,
<Formula 3>
,
<Formula 4>
(In Formula 4, n is an integer from 0 to 5);
(S2) The halohydrin resin prepared in the step (S1) is reacted with an alkali metal hydroxide, and 1.0 to 4.0 moles of the alkali metal hydroxide are reacted per 1.0 mole of the halohydrin resin to obtain the product represented by Formula 1. Synthesizing tetramethylbiphenol-type epoxy resin; and
(S3) Purifying the tetramethylbiphenol-type epoxy resin synthesized in step (S2) by reacting it with an aqueous carboxylic acid solution to remove metal cations.
상기 테트라메틸비페놀형 에폭시 수지의 에폭시 당량은 178 g/eq 내지 255 g/eq 인 것인, 테트라메틸비페놀형 에폭시 수지.According to paragraph 1,
The tetramethylbiphenol-type epoxy resin has an epoxy equivalent weight of 178 g/eq to 255 g/eq.
<화학식 2>
,
<화학식 3>
,
<화학식 4>
상기 화학식 4에서, n은 0 내지 5의 정수임;
(S2) 상기 (S1) 단계에서 제조된 상기 할로히드린 수지를 알칼리 금속 수산화물과 반응시켜 하기 화학식 1로 표시되는 테트라메틸비페놀형 에폭시 수지를 합성하는 단계,
<화학식 1>
상기 화학식 1에서 n은 0 내지 5의 정수임; 및
(S3) 상기 (S2) 단계에서 합성된 테트라메틸비페놀형 에폭시 수지를 카르복실산 수용액과 반응시켜 금속 양이온을 제거하여 정제하는 단계;를 포함하되, 제1항의 테트라메틸비페놀형 에폭시 수지의 제조방법.(S1) For 1 mole of tetramethylphenol represented by the following formula 2, 1.6 to 20 moles of epichlorohydrin represented by the following formula 3 are reacted at 50°C to 150°C to obtain the following formula 4 Forming a halohydrin resin represented by,
<Formula 2>
,
<Formula 3>
,
<Formula 4>
In Formula 4, n is an integer from 0 to 5;
(S2) reacting the halohydrin resin prepared in step (S1) with an alkali metal hydroxide to synthesize a tetramethylbiphenol-type epoxy resin represented by the following formula (1),
<Formula 1>
In Formula 1, n is an integer from 0 to 5; and
(S3) purifying the tetramethylbiphenol-type epoxy resin synthesized in step (S2) with an aqueous carboxylic acid solution to remove metal cations, but comprising: Manufacturing method.
상기 카르복실산은 옥살산, 프탈산, 이소프탈산, 테레프탈산, 트리멜리트산, 테트라히드로프탈산, 헥사히드로프탈산, 테트라클로로프탈산, 아디프산, 아젤라산, 세박산, 숙신산, 말산, 글라타르산, 말론산, 피멜산, 및 수베르산으로 이루어진 군에서 선택된 1종 이상을 포함하는 것인, 테트라메틸비페놀형 에폭시 수지의 제조방법.According to paragraph 3,
The carboxylic acids include oxalic acid, phthalic acid, isophthalic acid, terephthalic acid, trimellitic acid, tetrahydrophthalic acid, hexahydrophthalic acid, tetrachlorophthalic acid, adipic acid, azelaic acid, sebacic acid, succinic acid, malic acid, glataric acid, malonic acid, A method for producing a tetramethylbiphenol-type epoxy resin, comprising at least one selected from the group consisting of pimelic acid and suberic acid.
상기 테트라메틸비페놀형 에폭시 수지는 상기 조성물 전체 중량을 기준으로 10 내지 30 중량%로 포함되는 것인, 테트라메틸비페놀형 에폭시 수지 조성물.According to clause 5,
A tetramethylbiphenol-type epoxy resin composition, wherein the tetramethylbiphenol-type epoxy resin is contained in an amount of 10 to 30% by weight based on the total weight of the composition.
상기 경화제는 페놀계 경화제, 아민계 경화제, 산 무수물계 경화제, 아미드계 경화제 및 이미다졸류로 이루어진 군에서 선택된 1종 이상을 포함하는 것인, 테트라메틸비페놀형 에폭시 수지 조성물.According to clause 5,
A tetramethylbiphenol-type epoxy resin composition wherein the curing agent includes at least one selected from the group consisting of phenol-based curing agents, amine-based curing agents, acid anhydride-based curing agents, amide-based curing agents, and imidazoles.
상기 에폭시 수지 조성물은 추가 에폭시 수지, 경화촉진제 및 무기 충전재 로 이루어진 군에서 선택되는 1종 이상을 더 포함하되,
상기 추가 에폭시 수지는 테트라메틸비페놀형 에폭시 수지와는 상이한 에폭시 수지인 것인, 테트라메틸비페놀형 에폭시 수지 조성물.According to clause 5,
The epoxy resin composition further includes at least one selected from the group consisting of additional epoxy resins, curing accelerators, and inorganic fillers,
A tetramethylbiphenol-type epoxy resin composition, wherein the additional epoxy resin is an epoxy resin different from the tetramethylbiphenol-type epoxy resin.
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JPH10147629A (en) | 1996-11-15 | 1998-06-02 | Nippon Kayaku Co Ltd | Epoxy resin, epoxy resin composition and its cured material |
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